JP2008118142A - イメージセンサーおよびその製造方法 - Google Patents

イメージセンサーおよびその製造方法 Download PDF

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Publication number
JP2008118142A
JP2008118142A JP2007287711A JP2007287711A JP2008118142A JP 2008118142 A JP2008118142 A JP 2008118142A JP 2007287711 A JP2007287711 A JP 2007287711A JP 2007287711 A JP2007287711 A JP 2007287711A JP 2008118142 A JP2008118142 A JP 2008118142A
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JP
Japan
Prior art keywords
light shielding
insulating film
interlayer insulating
light
shielding pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007287711A
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English (en)
Japanese (ja)
Other versions
JP2008118142A5 (enExample
Inventor
Jun-Taek Lee
浚 澤 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008118142A publication Critical patent/JP2008118142A/ja
Publication of JP2008118142A5 publication Critical patent/JP2008118142A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2007287711A 2006-11-06 2007-11-05 イメージセンサーおよびその製造方法 Pending JP2008118142A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060109130A KR100784387B1 (ko) 2006-11-06 2006-11-06 이미지 센서 및 그 형성방법

Publications (2)

Publication Number Publication Date
JP2008118142A true JP2008118142A (ja) 2008-05-22
JP2008118142A5 JP2008118142A5 (enExample) 2011-09-08

Family

ID=39140553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007287711A Pending JP2008118142A (ja) 2006-11-06 2007-11-05 イメージセンサーおよびその製造方法

Country Status (3)

Country Link
US (1) US20080105908A1 (enExample)
JP (1) JP2008118142A (enExample)
KR (1) KR100784387B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9546906B2 (en) 2010-03-29 2017-01-17 Seiko Epson Corporation Spectrum sensor and angle restriction filter

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100882712B1 (ko) 2007-04-18 2009-02-06 엘지이노텍 주식회사 카메라 모듈
KR100878697B1 (ko) 2007-08-30 2009-01-13 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP4799522B2 (ja) * 2007-10-12 2011-10-26 株式会社東芝 撮像装置
JP4725614B2 (ja) * 2008-01-24 2011-07-13 ソニー株式会社 固体撮像装置
JP2009218382A (ja) 2008-03-11 2009-09-24 Sony Corp 固体撮像装置、その製造方法および撮像装置
JP2010182790A (ja) * 2009-02-04 2010-08-19 Fujifilm Corp 固体撮像素子、撮像装置、固体撮像素子の製造方法
JP2010182789A (ja) * 2009-02-04 2010-08-19 Fujifilm Corp 固体撮像素子、撮像装置、固体撮像素子の製造方法
JP5438374B2 (ja) * 2009-05-12 2014-03-12 キヤノン株式会社 固体撮像装置
EP2290684A1 (en) * 2009-09-01 2011-03-02 Microdul AG Method to provide a protective layer on an integrated circuit and integrated circuit fabricated according to said method
KR101769969B1 (ko) * 2010-06-14 2017-08-21 삼성전자주식회사 광 블랙 영역 및 활성 화소 영역 사이의 차광 패턴을 갖는 이미지 센서
US8902484B2 (en) 2010-12-15 2014-12-02 Qualcomm Mems Technologies, Inc. Holographic brightness enhancement film
WO2012144196A1 (ja) * 2011-04-22 2012-10-26 パナソニック株式会社 固体撮像装置
KR20120135627A (ko) * 2011-06-07 2012-12-17 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2013110285A (ja) * 2011-11-22 2013-06-06 Sony Corp 固体撮像素子および製造方法、並びに、電子機器
JP6116878B2 (ja) * 2012-12-03 2017-04-19 ルネサスエレクトロニクス株式会社 半導体装置
GB2529567B (en) * 2015-09-22 2016-11-23 X-Fab Semiconductor Foundries Ag Light shield for light sensitive elements
TWI646678B (zh) * 2017-12-07 2019-01-01 晶相光電股份有限公司 影像感測裝置
GB2596122B (en) * 2020-06-18 2022-11-23 X Fab Global Services Gmbh Dark reference device for improved dark current matching
JP7756518B2 (ja) * 2021-09-03 2025-10-20 キヤノン株式会社 光電変換装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020058265A (ko) * 2000-12-29 2002-07-12 박종섭 반도체소자의 형성방법
KR100642764B1 (ko) * 2004-09-08 2006-11-10 삼성전자주식회사 이미지 소자 및 그 제조 방법
KR100614793B1 (ko) * 2004-09-23 2006-08-22 삼성전자주식회사 이미지 센서 및 이의 제조 방법.
KR100654342B1 (ko) * 2005-02-07 2006-12-08 삼성전자주식회사 이미지 센서
US7701493B2 (en) * 2005-02-28 2010-04-20 Micron Technology, Inc. Imager row-wise noise correction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9546906B2 (en) 2010-03-29 2017-01-17 Seiko Epson Corporation Spectrum sensor and angle restriction filter

Also Published As

Publication number Publication date
US20080105908A1 (en) 2008-05-08
KR100784387B1 (ko) 2007-12-11

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