JP2008091962A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2008091962A
JP2008091962A JP2007339293A JP2007339293A JP2008091962A JP 2008091962 A JP2008091962 A JP 2008091962A JP 2007339293 A JP2007339293 A JP 2007339293A JP 2007339293 A JP2007339293 A JP 2007339293A JP 2008091962 A JP2008091962 A JP 2008091962A
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JP
Japan
Prior art keywords
layer
semiconductor
light emitting
semiconductor layer
type
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Pending
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JP2007339293A
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English (en)
Japanese (ja)
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JP2008091962A5 (enrdf_load_stackoverflow
Inventor
Yukio Shakuda
幸男 尺田
Shunji Nakada
俊次 中田
Masayuki Sonobe
雅之 園部
Takeshi Tsutsui
毅 筒井
Norikazu Ito
範和 伊藤
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Rohm Co Ltd
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Rohm Co Ltd
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2007339293A priority Critical patent/JP2008091962A/ja
Publication of JP2008091962A publication Critical patent/JP2008091962A/ja
Publication of JP2008091962A5 publication Critical patent/JP2008091962A5/ja
Pending legal-status Critical Current

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JP2007339293A 2007-12-28 2007-12-28 半導体発光素子 Pending JP2008091962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007339293A JP2008091962A (ja) 2007-12-28 2007-12-28 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007339293A JP2008091962A (ja) 2007-12-28 2007-12-28 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP32633596A Division JP4104686B2 (ja) 1996-12-06 1996-12-06 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2008091962A true JP2008091962A (ja) 2008-04-17
JP2008091962A5 JP2008091962A5 (enrdf_load_stackoverflow) 2008-12-18

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ID=39375692

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JP2007339293A Pending JP2008091962A (ja) 2007-12-28 2007-12-28 半導体発光素子

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JP (1) JP2008091962A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014181558A1 (ja) * 2013-05-09 2014-11-13 国立大学法人東京大学 発光ダイオード素子およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177423A (ja) * 1992-07-07 1994-06-24 Nichia Chem Ind Ltd 青色発光素子
JPH06237042A (ja) * 1993-02-12 1994-08-23 Nec Corp 半導体歪量子井戸構造
JPH06268257A (ja) * 1993-03-12 1994-09-22 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH08228048A (ja) * 1994-12-22 1996-09-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH08316587A (ja) * 1995-05-18 1996-11-29 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH08316582A (ja) * 1995-05-19 1996-11-29 Nec Corp 半導体レーザ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177423A (ja) * 1992-07-07 1994-06-24 Nichia Chem Ind Ltd 青色発光素子
JPH06237042A (ja) * 1993-02-12 1994-08-23 Nec Corp 半導体歪量子井戸構造
JPH06268257A (ja) * 1993-03-12 1994-09-22 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
JPH08228048A (ja) * 1994-12-22 1996-09-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH08316587A (ja) * 1995-05-18 1996-11-29 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH08316582A (ja) * 1995-05-19 1996-11-29 Nec Corp 半導体レーザ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014181558A1 (ja) * 2013-05-09 2014-11-13 国立大学法人東京大学 発光ダイオード素子およびその製造方法
US20160118539A1 (en) * 2013-05-09 2016-04-28 The University Of Tokyo Light emitting diode element and method of manufacturing the same
US9577148B2 (en) 2013-05-09 2017-02-21 The University Of Tokyo Light emitting diode element and method of manufacturing the same

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