JP2008085343A - 半導体レーザ装置および半導体レーザ装置の製造方法 - Google Patents

半導体レーザ装置および半導体レーザ装置の製造方法 Download PDF

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Publication number
JP2008085343A
JP2008085343A JP2007251151A JP2007251151A JP2008085343A JP 2008085343 A JP2008085343 A JP 2008085343A JP 2007251151 A JP2007251151 A JP 2007251151A JP 2007251151 A JP2007251151 A JP 2007251151A JP 2008085343 A JP2008085343 A JP 2008085343A
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JP
Japan
Prior art keywords
laser device
semiconductor laser
vertical
layer
pumping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007251151A
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English (en)
Japanese (ja)
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JP2008085343A5 (https=
Inventor
Marc Philippens
フィリペンス マルク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102007002303A external-priority patent/DE102007002303A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2008085343A publication Critical patent/JP2008085343A/ja
Publication of JP2008085343A5 publication Critical patent/JP2008085343A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
JP2007251151A 2006-09-27 2007-09-27 半導体レーザ装置および半導体レーザ装置の製造方法 Pending JP2008085343A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006045706 2006-09-27
DE102007002303A DE102007002303A1 (de) 2006-09-27 2007-01-16 Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
JP2008085343A true JP2008085343A (ja) 2008-04-10
JP2008085343A5 JP2008085343A5 (https=) 2011-07-07

Family

ID=38670004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007251151A Pending JP2008085343A (ja) 2006-09-27 2007-09-27 半導体レーザ装置および半導体レーザ装置の製造方法

Country Status (3)

Country Link
US (1) US7672353B2 (https=)
EP (1) EP1906497B1 (https=)
JP (1) JP2008085343A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007011124A1 (de) 2007-01-25 2008-07-31 Osram Opto Semiconductors Gmbh Organischer Halbleiterlaser und Verfahren zu dessen Herstellung
EP2337168B1 (de) 2009-12-17 2019-12-25 Forschungsverbund Berlin e.V. Oberflächenemittierende Laserstrahlquelle mit zwei Kavitäten
US9559734B2 (en) * 2015-03-13 2017-01-31 Qualcomm Incorporated Robust coefficient computation for analog interference cancellation
WO2019216948A2 (en) 2017-09-29 2019-11-14 The Trustees Of Columbia University In The City Of New York Compact narrow-linewidth integrated laser

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003535480A (ja) * 2000-05-30 2003-11-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的にポンピングされる表面放出半導体レーザ装置
JP2004140372A (ja) * 2002-10-16 2004-05-13 Eastman Kodak Co 有機レーザ空洞アレイ
JP2004282008A (ja) * 2002-10-11 2004-10-07 Eastman Kodak Co 有機活性領域を有する有機垂直共振器レーザデバイス
WO2005048424A1 (de) * 2003-11-13 2005-05-26 Osram Opto Semiconductors Gmbh Monolithischer optisch gepumpter vcsel mit seitlich angebrachtem kantenemitter
JP2005524981A (ja) * 2002-05-03 2005-08-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光学的にポンピングされる半導体レーザ装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2311166A (en) * 1996-03-13 1997-09-17 Sharp Kk An optoelectronic semiconductor device
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
US6330262B1 (en) * 1997-05-09 2001-12-11 The Trustees Of Princeton University Organic semiconductor lasers
JP3515461B2 (ja) * 1999-12-28 2004-04-05 株式会社東芝 半導体発光装置
DE10108079A1 (de) 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
CA2328637A1 (en) * 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
GB0124595D0 (en) * 2001-10-12 2001-12-05 Savair & Aro Ltd Pressure sensor
DE10223540B4 (de) * 2002-05-27 2006-12-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
JPWO2005002010A1 (ja) * 2003-06-27 2006-08-10 株式会社半導体エネルギー研究所 有機レーザー装置
US7292614B2 (en) 2003-09-23 2007-11-06 Eastman Kodak Company Organic laser and liquid crystal display

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003535480A (ja) * 2000-05-30 2003-11-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的にポンピングされる表面放出半導体レーザ装置
JP2005524981A (ja) * 2002-05-03 2005-08-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光学的にポンピングされる半導体レーザ装置
JP2004282008A (ja) * 2002-10-11 2004-10-07 Eastman Kodak Co 有機活性領域を有する有機垂直共振器レーザデバイス
JP2004140372A (ja) * 2002-10-16 2004-05-13 Eastman Kodak Co 有機レーザ空洞アレイ
WO2005048424A1 (de) * 2003-11-13 2005-05-26 Osram Opto Semiconductors Gmbh Monolithischer optisch gepumpter vcsel mit seitlich angebrachtem kantenemitter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN7012004193; ＲＩＥＤＬ　Ｔ．　ｅｔ　ａｌ．: Ａｐｐｌｉｅｄ　Ｐｈｙｓｉｃｓ　Ｌｅｔｅｒｓ Ｖｏｌ．８８, 20060615, ｐ．２４１１１６-１-２４１１１６-３ *

Also Published As

Publication number Publication date
EP1906497B1 (de) 2011-01-05
EP1906497A1 (de) 2008-04-02
US20080089379A1 (en) 2008-04-17
US7672353B2 (en) 2010-03-02

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