JP2008085318A5 - - Google Patents
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- Publication number
- JP2008085318A5 JP2008085318A5 JP2007224006A JP2007224006A JP2008085318A5 JP 2008085318 A5 JP2008085318 A5 JP 2008085318A5 JP 2007224006 A JP2007224006 A JP 2007224006A JP 2007224006 A JP2007224006 A JP 2007224006A JP 2008085318 A5 JP2008085318 A5 JP 2008085318A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- laser beam
- film
- manufacturing
- crystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 33
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000013078 crystal Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 230000001678 irradiating effect Effects 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007224006A JP5448315B2 (ja) | 2006-08-31 | 2007-08-30 | 結晶性半導体膜の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006236018 | 2006-08-31 | ||
| JP2006236018 | 2006-08-31 | ||
| JP2007224006A JP5448315B2 (ja) | 2006-08-31 | 2007-08-30 | 結晶性半導体膜の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008085318A JP2008085318A (ja) | 2008-04-10 |
| JP2008085318A5 true JP2008085318A5 (cg-RX-API-DMAC7.html) | 2010-10-07 |
| JP5448315B2 JP5448315B2 (ja) | 2014-03-19 |
Family
ID=39355788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007224006A Expired - Fee Related JP5448315B2 (ja) | 2006-08-31 | 2007-08-30 | 結晶性半導体膜の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5448315B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011161715A1 (ja) * | 2010-06-21 | 2011-12-29 | パナソニック株式会社 | 薄膜トランジスタアレイ装置、有機ｅｌ表示装置、及び、薄膜トランジスタアレイ装置の製造方法 |
| DE102016111998B4 (de) * | 2016-06-30 | 2024-01-18 | Infineon Technologies Ag | Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen |
| WO2018101154A1 (ja) * | 2016-11-30 | 2018-06-07 | 株式会社ブイ・テクノロジー | レーザ照射装置および薄膜トランジスタの製造方法 |
| KR102470876B1 (ko) * | 2021-01-28 | 2022-11-25 | 재단법인대구경북과학기술원 | 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자 |
| CN115132754B (zh) * | 2022-06-30 | 2023-06-27 | 惠科股份有限公司 | 背光模组及其制备方法、显示面板 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5797619A (en) * | 1980-12-09 | 1982-06-17 | Matsushita Electronics Corp | Formation of semiconductor element |
| JPS6018913A (ja) * | 1983-07-12 | 1985-01-31 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6159820A (ja) * | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62160712A (ja) * | 1986-01-09 | 1987-07-16 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
| JPH03286520A (ja) * | 1990-04-02 | 1991-12-17 | Seiko Epson Corp | 結晶性半導体薄膜の製造方法 |
| JP2002093702A (ja) * | 2000-09-14 | 2002-03-29 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP4566504B2 (ja) * | 2001-08-17 | 2010-10-20 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
| JP5352040B2 (ja) * | 2004-08-23 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-08-30 JP JP2007224006A patent/JP5448315B2/ja not_active Expired - Fee Related
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