JP2008078333A - 基板上の半導体部品の薄型化 - Google Patents
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Abstract
【解決手段】 ベース・プレート32に設置された半導体製品において、基板28上の半導体部品29の表面30をベース・プレート32の表面33から所定の高さhにする。その所定の高さhに調整された半導体部品29の表面30を機械加工することにより、基板28上の半導体部品29の厚さを一律に所定の厚さにする。
【選択図】 図3
Description
従来方法(図2)と本発明(図3)での半導体チップの厚さのばらつきの比較データを表1に示す。従来方法では、機械加工後のシリコンの厚さに30ミクロンのばらつきが発生した。一方、本発明の場合は、2ミクロンのばらつきに抑えられることが確認された。本確認に使用したサンプルは、20mm角の基板に7.3mm角の半導体チップを接合した半導体製品である。また、本発明により機械加工したサンプルについて温度サイクル試験(-40℃〜+115℃,2cph, n=20)をおこなったが、6500サイクルまでで電気的および機械的な不良は発生しなかった。
3 はんだボール
4、11、29 半導体部品(チップ)
5、6、10、28、50 基板
7 基板の表面
12、35、51 基板の底(下)面
13、30、52 半導体部品の加工面
20 固定用具
21 底部
22 脚部
23 底部の表面
24 脚部の端面
25 第一の仮留め材
32、40 ベース・プレート
33、48 ベース・プレートの表面
34 第二の仮留め材
41 デイスペンサー
42 仮留め材
43 吸着板
44 穴
45 トレイ
47 吸着板の下面
100 PoP構造
Claims (16)
- 基板上の半導体部品を薄くする方法であって、
ベース・プレートを準備するステップと、
半導体部品が取り付けられた基板を準備するステップと、
底部と脚部を有し、底部の表面と脚部の端面の間隔が予め決められた長さを有する固定用具を準備するステップと、
固定用具の底部の表面に半導体部品の表面が接合するように、固定用具に基板を仮留めするステップと、
ベース・プレートの表面に、基板が仮留めされた固定用具を置くステップであって、さらに半導体部品が取り付けられていない側の基板の表面をベース・プレートの表面に仮留めするステップと、
固定用具と基板との仮留めを解除して、固定用具をベース・プレートの表面から取り外すステップと、
ベース・プレート上の露出した半導体部品の表面を機械加工するステップと、
機械加工後の基板とベース・プレートの表面との仮留めを解除して、基板とベース・プレートとを分離するステップと、
を含む方法。 - 前記固定用具に基板を仮留めするステップは、
前記固定用具の底部の表面に第一の固定材料を塗布するステップと、
前記第一の固定材料が塗布された前記固定用具の底部の表面に前記半導体部品の表面を接合するステップと、
前記接合後の第一の固定材料を硬化させるステップと、を含む請求項1の方法。 - 前記固定用具に基板を仮留めするステップは、
前記半導体部品の表面に第一の固定材料を塗布するステップと、
前記第一の固定材料が塗布された前記半導体部品の表面を前記固定用具の底部の表面に接合するステップと、
前記接合後の第一の固定材料を硬化させるステップと、を含む請求項1の方法。 - 前記基板の表面をベース・プレートの表面に仮留めするステップは、
前記ベース・プレートの表面に第二の固定材料を塗布するステップと、
前記第二の固定材料が塗布された前記ベース・プレートの表面に前記半導体部品が取り付けられていない側の基板の表面を接合するステップと、
前記接合後の第二の固定材料を硬化させるステップと、を含む請求項2または3の方法。 - 前記基板の表面をベース・プレートの表面に仮留めするステップは、
前記半導体部品が取り付けられていない側の基板の表面に第二の固定材料を塗布するステップと、
前記ベース・プレートの表面に、前記第二の固定材料が塗布された前記半導体部品が取り付けられていない側の基板の表面を接合するステップと、
前記接合後の第二の固定材料を硬化させるステップと、を含む請求項2または3の方法。 - 前記ベース・プレートは光を透過する材料からなり、前記第二の固定材料は光硬化材料からなり、
前記第二の固定材料を硬化させるステップは、前記ベース・プレートを通して前記基板に光を照射するステップを含む、請求項4または5の方法。 - 前記第一および第二の固定材料は熱可塑性材料からなる、請求項2から5のいずれか一項の方法。
- 前記固定用具と基板との仮留めを解除するステップは、前記硬化した第一の固定材料を加熱して前記基板から剥離させるステップを含み、
前記機械加工後の基板とベース・プレートの表面の仮留めを解除するステップは、前記硬化した第二の固定材料を加熱して前記基板から剥離させるステップを含む、請求項7の方法。 - 前記第一の固定材料の軟化温度は前記第二の固定材料の軟化温度よりも低い、請求項8の方法。
- 前記半導体部品が取り付けられた基板を準備するステップは、前記半導体部品が取り付けられていない側の基板の表面に第三の固定材料を塗布するステップを含み、
さらに、前記基板とベース・プレートとを分離するステップの後に、前記基板の表面から前記第三の固定材料を除去するステップを含む、請求項4または5の方法。 - 前記固定用具の底部は少なくとも1つ以上の開口を有し、
固定用具に基板を仮留めするステップは、前記固定用具の底部の開口を通して前記半導体部品の表面を吸引することにより、前記固定用具の底部の表面に当該半導体部品の表面を接合させるステップを含む、請求項1の方法。 - 前記基板の表面をベース・プレートの表面に仮留めするステップは、
前記ベース・プレートの表面に第二の固定材料を塗布するステップと、
前記第二の固定材料が塗布された前記ベース・プレートの表面に前記半導体部品が取り付けられていない側の基板の表面を接合するステップと、
前記接合後の第二の固定材料を硬化させるステップと、を含む請求項11の方法。 - 前記ベース・プレートは光を透過する材料からなり、前記第二の固定材料は光硬化材料からなり、
前記第二の固定材料を硬化させるステップは、前記ベース・プレートを通して前記基板に光を照射するステップを含む、請求項12の方法。 - 前記第二の固定材料は熱可塑性材料からなる、請求項12の方法。
- 前記機械加工後の基板とベース・プレートの表面との仮留めを解除するステップは、前記硬化した第二の固定材料を加熱して前記基板から剥離させるステップを含む、請求項14の方法。
- 請求項1から15にいずれか一項の方法により機械加工された半導体部品を有する第一の基板と、
第一の基板の半導体部品がある側の表面の上方に設けられた第二の基板であって、第一の基板とはんだ接合されている第二の基板と、
を備える、パッケージ・オン・パッケージ(PoP)構造。
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US11/856,769 US7682936B2 (en) | 2006-09-20 | 2007-09-18 | Reduction in thickness of semiconductor component on substrate |
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