JP2008075179A5 - - Google Patents

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JP2008075179A5
JP2008075179A5 JP2007240954A JP2007240954A JP2008075179A5 JP 2008075179 A5 JP2008075179 A5 JP 2008075179A5 JP 2007240954 A JP2007240954 A JP 2007240954A JP 2007240954 A JP2007240954 A JP 2007240954A JP 2008075179 A5 JP2008075179 A5 JP 2008075179A5
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JP
Japan
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JP2007240954A
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JP5258241B2 (ja
JP2008075179A (ja
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JP2007240954A 2006-09-19 2007-09-18 Ｕｖ照射チャンバーをクリーニングする方法 Active JP5258241B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84573206P 2006-09-19 2006-09-19
US60/845732 2006-09-19

Publications (3)

Publication Number Publication Date
JP2008075179A JP2008075179A (ja) 2008-04-03
JP2008075179A5 true JP2008075179A5 (ja) 2008-05-15
JP5258241B2 JP5258241B2 (ja) 2013-08-07

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ID=39347528

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JP2007240954A Active JP5258241B2 (ja) 2006-09-19 2007-09-18 Ｕｖ照射チャンバーをクリーニングする方法

Country Status (3)

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JP (1) JP5258241B2 (ja)
KR (1) KR20080026069A (ja)
TW (1) TW200832534A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009158169A1 (en) * 2008-06-27 2009-12-30 Applied Materials, Inc. Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
US20100018548A1 (en) 2008-07-23 2010-01-28 Applied Materials, Inc. Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
JP5216612B2 (ja) * 2009-01-27 2013-06-19 タツモ株式会社 半導体ウェハ処理装置
KR101896607B1 (ko) * 2010-10-19 2018-09-07 어플라이드 머티어리얼스, 인코포레이티드 나노큐어 자외선 챔버용 석영 샤워헤드
US20120258259A1 (en) 2011-04-08 2012-10-11 Amit Bansal Apparatus and method for uv treatment, chemical treatment, and deposition
KR20150010720A (ko) * 2012-04-25 2015-01-28 어플라이드 머티어리얼스, 인코포레이티드 Ｕｖ 기반 실릴화 챔버 세정을 위한 방법
US9364871B2 (en) * 2012-08-23 2016-06-14 Applied Materials, Inc. Method and hardware for cleaning UV chambers
CN102983064B (zh) * 2012-11-07 2015-08-19 上海交通大学 集紫外光/臭氧表面处理与电学性质原位测试的真空设备
CN113412166B (zh) * 2019-02-12 2024-02-20 应用材料公司 用于清洁真空腔室的方法、用于真空处理基板的方法以及用于真空处理基板的设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105343B2 (ja) * 1984-11-26 1995-11-13 株式会社半導体エネルギ−研究所 薄膜形成方法及び装置
JPS62284080A (ja) * 1986-06-02 1987-12-09 Nec Corp 光堆積方法
JPS63283122A (ja) * 1987-05-15 1988-11-21 Semiconductor Energy Lab Co Ltd 薄膜作製装置
JPS644015A (en) * 1987-06-26 1989-01-09 Anelva Corp Thin-film formation device
JPH0345956U (ja) * 1989-09-05 1991-04-26
JP3125280B2 (ja) * 1992-11-10 2001-01-15 日立電子エンジニアリング株式会社 Ｃｖｄ装置のクリーニング方法
JP2000323467A (ja) * 1999-05-11 2000-11-24 Nippon Asm Kk 遠隔プラズマ放電室を有する半導体処理装置
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
TW200506093A (en) * 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films

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