JP2008063168A - グラファイトシート及びその製造方法 - Google Patents
グラファイトシート及びその製造方法 Download PDFInfo
- Publication number
- JP2008063168A JP2008063168A JP2006240676A JP2006240676A JP2008063168A JP 2008063168 A JP2008063168 A JP 2008063168A JP 2006240676 A JP2006240676 A JP 2006240676A JP 2006240676 A JP2006240676 A JP 2006240676A JP 2008063168 A JP2008063168 A JP 2008063168A
- Authority
- JP
- Japan
- Prior art keywords
- graphite sheet
- graphite
- superheated steam
- sheet
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 174
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 172
- 239000010439 graphite Substances 0.000 title claims abstract description 172
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000001301 oxygen Substances 0.000 claims abstract description 54
- 238000001179 sorption measurement Methods 0.000 claims abstract description 32
- 238000011282 treatment Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 19
- 230000017525 heat dissipation Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000003795 desorption Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004949 mass spectrometry Methods 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 12
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000004093 laser heating Methods 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000007906 compression Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021383 artificial graphite Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229910021382 natural graphite Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000011835 quiches Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Carbon And Carbon Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】酸素吸着量を0.055質量%以下のグラファイトシートとする。酸素吸着量を一定以下とすることで優れた熱拡散性を得ることができる。
【選択図】なし
Description
本発明のグラファイトシートは、グラファイトを主成分とするシート状体である。シートを構成するグラファイト原料としては、天然黒鉛(鱗片状黒鉛、塊状黒鉛、土状黒鉛など)、熱分解黒鉛、キッシュ黒鉛などの人造黒鉛的及びこれらの加工体を用いることができる。加工体としては、特に限定しないが、膨張黒鉛を挙げることができる。膨張黒鉛は、鱗片状黒鉛などの天然黒鉛、人造黒鉛を硫酸や硝酸等の酸処理後、熱処理したもの及びさらに加熱膨張させたものである。なお、単に、膨張黒鉛というときには、膨張前のもの(膨張性黒鉛)及び膨張後のもの(膨張化黒鉛)を意味するものとし、特に、膨張前のものについては膨張性黒鉛と記載し、膨張後のものについては膨張化黒鉛というものとする。なお、本発明のグラファイトシートは、黒鉛原料中にアモルファス炭素を含んでいてもよい。
次に、本発明のグラファイトシートを得るのに適したグラファイトシートの製造方法について説明する。
本発明のグラファイトシートの加工方法は、上記した過熱水蒸気処理工程を備えることができる。本発明のグラファイトシートの加工方法によれば、グラファイトシートの熱拡散性を改善又は向上させることができる。この方法によれば、特に、使用済みのグラファイトシートの再生利用用途にも適用することができる。
Claims (13)
- グラファイトシートであって、
酸素吸着量が0.055質量%以下である、シート。 - 前記酸素吸着量が0.045質量%以下である、請求項1に記載のグラファイトシート。
- 前記酸素吸着量は、グラファイトシートを不活性雰囲気中で常温から1000℃にまで昇温加熱して発生したガスをMS(GC/MS)により同定及び定量するTPD−MS(Temperature Programmed Desorption /Decomposition-Mass Spectrometry)法において、二酸化炭素(CO2)及び水(H2O)の発生量から換算される酸素(O2)換算量である、請求項1又は2に記載のグラファイトシート。
- グラファイトシートであって、
450℃以上で過熱水蒸気処理されて得られる、シート。 - 前記過熱水蒸気処理前よりも酸素吸着量が低下されている、請求項4に記載のグラファイトシート。
- 前記酸素含有量は、0.055質量%以下である、請求項5に記載のグラファイトシート。
- 面内方向への熱拡散率が3.5m2/s以上である、請求項1〜6のいずれかに記載のグラファイトシート。
- 膨張化黒鉛を含むシートである、請求項1〜7のいずれかに記載のグラファイトシート。
- グラファイトシートの製造方法であって、
グラファイトシートを準備する工程と、
前記グラファイトシートを450℃以上の過熱水蒸気で処理する過熱水蒸気処理工程と、
を備える、製造方法。 - 前記グラファイトシートは膨張化黒鉛を含有する、請求項9に記載のグラファイトシートの製造方法。
- 前記過熱水蒸気処理工程は、前記酸素含有量を0.055質量%以下とする工程である、請求項9又は10に記載のグラファイトシートの製造方法。
- 請求項9〜11のいずれかに記載の方法によって得られる、グラファイトシート。
- 請求項1〜8及び12のいずれかに記載のグラファイトシートを用いる放熱用シート。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006240676A JP5159073B2 (ja) | 2006-09-05 | 2006-09-05 | グラファイトシート及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006240676A JP5159073B2 (ja) | 2006-09-05 | 2006-09-05 | グラファイトシート及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008063168A true JP2008063168A (ja) | 2008-03-21 |
JP5159073B2 JP5159073B2 (ja) | 2013-03-06 |
Family
ID=39286191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006240676A Expired - Fee Related JP5159073B2 (ja) | 2006-09-05 | 2006-09-05 | グラファイトシート及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5159073B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2101216A2 (en) | 2008-03-12 | 2009-09-16 | Ricoh Company, Ltd. | Imprint method and mold |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102183485B1 (ko) * | 2020-07-30 | 2020-11-26 | 주식회사 엔티에스 | 폐흑연을 이용한 방열 시트의 제조 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087885A (ja) * | 1994-06-15 | 1996-01-12 | Toshiba Corp | リチウム二次電池 |
JPH10312807A (ja) * | 1997-03-11 | 1998-11-24 | Toshiba Corp | リチウム二次電池及び負極の製造方法 |
JPH11100207A (ja) * | 1997-09-26 | 1999-04-13 | Matsushita Electric Ind Co Ltd | グラファイトフィルムの製造方法 |
JP2003165715A (ja) * | 2001-11-29 | 2003-06-10 | Du Pont Toray Co Ltd | 炭素フィルムの製造方法およびそれから得られる炭素フィルム |
JP2003231098A (ja) * | 2002-02-08 | 2003-08-19 | Mitsubishi Gas Chem Co Inc | 炭素からなる骨格を持つ薄膜状粒子を含む複合体およびその作製方法 |
WO2005023713A1 (ja) * | 2003-09-02 | 2005-03-17 | Kaneka Corporation | フィルム状グラファイトとその製造方法 |
WO2005123582A1 (ja) * | 2004-06-16 | 2005-12-29 | Kaneka Corporation | グラファイトフィルムの製造方法、およびその方法で製造されたグラファイトフィルム |
JP2006062922A (ja) * | 2004-08-27 | 2006-03-09 | Toyo Tanso Kk | 膨張黒鉛シート |
WO2006057183A1 (ja) * | 2004-11-24 | 2006-06-01 | Kaneka Corporation | グラファイトフィルムの製造方法 |
-
2006
- 2006-09-05 JP JP2006240676A patent/JP5159073B2/ja not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087885A (ja) * | 1994-06-15 | 1996-01-12 | Toshiba Corp | リチウム二次電池 |
JPH10312807A (ja) * | 1997-03-11 | 1998-11-24 | Toshiba Corp | リチウム二次電池及び負極の製造方法 |
JPH11100207A (ja) * | 1997-09-26 | 1999-04-13 | Matsushita Electric Ind Co Ltd | グラファイトフィルムの製造方法 |
JP2003165715A (ja) * | 2001-11-29 | 2003-06-10 | Du Pont Toray Co Ltd | 炭素フィルムの製造方法およびそれから得られる炭素フィルム |
JP2003231098A (ja) * | 2002-02-08 | 2003-08-19 | Mitsubishi Gas Chem Co Inc | 炭素からなる骨格を持つ薄膜状粒子を含む複合体およびその作製方法 |
WO2005023713A1 (ja) * | 2003-09-02 | 2005-03-17 | Kaneka Corporation | フィルム状グラファイトとその製造方法 |
WO2005123582A1 (ja) * | 2004-06-16 | 2005-12-29 | Kaneka Corporation | グラファイトフィルムの製造方法、およびその方法で製造されたグラファイトフィルム |
JP2006062922A (ja) * | 2004-08-27 | 2006-03-09 | Toyo Tanso Kk | 膨張黒鉛シート |
WO2006057183A1 (ja) * | 2004-11-24 | 2006-06-01 | Kaneka Corporation | グラファイトフィルムの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2101216A2 (en) | 2008-03-12 | 2009-09-16 | Ricoh Company, Ltd. | Imprint method and mold |
Also Published As
Publication number | Publication date |
---|---|
JP5159073B2 (ja) | 2013-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Vlassiouk et al. | Electrical and thermal conductivity of low temperature CVD graphene: the effect of disorder | |
Woehrl et al. | Plasma-enhanced chemical vapor deposition of graphene on copper substrates | |
Kuznetsov et al. | Multi‐walled carbon nanotubes with ppm level of impurities | |
Shlyakhova et al. | Synthesis of nitrogen‐containing porous carbon using calcium oxide nanoparticles | |
Kumar | Effect of silicon crystal size on photoluminescence appearance in porous silicon | |
US10072355B2 (en) | Methods of forming graphene single crystal domains on a low nucleation site density substrate | |
Abidi et al. | Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil | |
Qing et al. | Graphene growth with ‘no’feedstock | |
Yang et al. | Effects of substrate on morphologies and photoluminescence properties of ZnO nanorods | |
Kato et al. | Controlled defect formation and heteroatom doping in monolayer graphene using active oxygen species under ultraviolet irradiation | |
Zhao et al. | Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition | |
Kondrashov et al. | Controlled graphene synthesis from solid carbon sources | |
Bouzourâa et al. | Optical study of annealed cobalt–porous silicon nanocomposites | |
Lee et al. | Quality improvement of fast-synthesized graphene films by rapid thermal chemical vapor deposition for mass production | |
Choi et al. | Varying electronic coupling at graphene–copper interfaces probed with Raman spectroscopy | |
Ueda et al. | Effect of laser irradiation on carbon nanotube films for NOx gas sensor | |
JP5159073B2 (ja) | グラファイトシート及びその製造方法 | |
Macháč et al. | Synthesis of graphene on Co/SiC structure | |
Niu et al. | Inhomogeneous strain and doping of transferred CVD-grown graphene | |
Mallick et al. | Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique | |
Silva et al. | Vertically aligned N-doped CNTs growth using Taguchi experimental design | |
Hu et al. | High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism | |
Madito et al. | A dilute Cu (Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition | |
Roy et al. | Evolution, kinetics, energetics, and environmental factors of graphene degradation on silicon dioxide | |
Macháč et al. | Synthesis of graphene on SiC substrate via Ni-silicidation reactions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090610 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090901 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090901 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090901 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090901 |
|
A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A073 Effective date: 20100202 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100204 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120821 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121017 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121211 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5159073 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151221 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |