JP2008056857A - 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置 - Google Patents

光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置 Download PDF

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Publication number
JP2008056857A
JP2008056857A JP2006238028A JP2006238028A JP2008056857A JP 2008056857 A JP2008056857 A JP 2008056857A JP 2006238028 A JP2006238028 A JP 2006238028A JP 2006238028 A JP2006238028 A JP 2006238028A JP 2008056857 A JP2008056857 A JP 2008056857A
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Japan
Prior art keywords
optical semiconductor
group
thermosetting composition
optical
epoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006238028A
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English (en)
Japanese (ja)
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JP2008056857A5 (de
Inventor
Mitsuru Tanigawa
満 谷川
Takashi Watanabe
貴志 渡邉
Takashi Nishimura
貴史 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP2006238028A priority Critical patent/JP2008056857A/ja
Publication of JP2008056857A publication Critical patent/JP2008056857A/ja
Publication of JP2008056857A5 publication Critical patent/JP2008056857A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Sealing Material Composition (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2006238028A 2006-09-01 2006-09-01 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置 Withdrawn JP2008056857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006238028A JP2008056857A (ja) 2006-09-01 2006-09-01 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006238028A JP2008056857A (ja) 2006-09-01 2006-09-01 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置

Publications (2)

Publication Number Publication Date
JP2008056857A true JP2008056857A (ja) 2008-03-13
JP2008056857A5 JP2008056857A5 (de) 2009-08-20

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JP2006238028A Withdrawn JP2008056857A (ja) 2006-09-01 2006-09-01 光半導体用熱硬化性組成物、光半導体素子用封止剤、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材及び光半導体装置

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009242587A (ja) * 2008-03-31 2009-10-22 Namics Corp エポキシ樹脂組成物
JP2009290045A (ja) * 2008-05-30 2009-12-10 Namics Corp Ｌｅｄ用導電性ダイボンディング剤
JP2010111756A (ja) * 2008-11-05 2010-05-20 Yokohama Rubber Co Ltd:The 加熱硬化性光半導体封止用樹脂組成物およびこれを用いる光半導体封止体
JP2010153910A (ja) * 2010-03-19 2010-07-08 Yokohama Rubber Co Ltd:The 光半導体封止体
KR101207103B1 (ko) 2010-03-31 2012-12-03 코오롱인더스트리 주식회사 봉지재 조성물，이의 경화막 및 유기발광소자
US8994030B2 (en) 2012-04-27 2015-03-31 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015063656A (ja) * 2012-09-28 2015-04-09 三菱化学株式会社 熱硬化性樹脂組成物、その製造方法、樹脂硬化物の製造方法、および、エポキシ化合物の自己重合を発生させる方法
JP2015189825A (ja) * 2014-03-27 2015-11-02 三菱化学株式会社 熱硬化性樹脂組成物
JP2017509741A (ja) * 2014-02-06 2017-04-06 モーメンティブ・パフォーマンス・マテリアルズ・インク 湿気硬化性シリコーン組成物

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009242587A (ja) * 2008-03-31 2009-10-22 Namics Corp エポキシ樹脂組成物
JP2009290045A (ja) * 2008-05-30 2009-12-10 Namics Corp Ｌｅｄ用導電性ダイボンディング剤
JP2010111756A (ja) * 2008-11-05 2010-05-20 Yokohama Rubber Co Ltd:The 加熱硬化性光半導体封止用樹脂組成物およびこれを用いる光半導体封止体
JP2010153910A (ja) * 2010-03-19 2010-07-08 Yokohama Rubber Co Ltd:The 光半導体封止体
KR101207103B1 (ko) 2010-03-31 2012-12-03 코오롱인더스트리 주식회사 봉지재 조성물，이의 경화막 및 유기발광소자
US8994030B2 (en) 2012-04-27 2015-03-31 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015063656A (ja) * 2012-09-28 2015-04-09 三菱化学株式会社 熱硬化性樹脂組成物、その製造方法、樹脂硬化物の製造方法、および、エポキシ化合物の自己重合を発生させる方法
CN104662086A (zh) * 2012-09-28 2015-05-27 三菱化学株式会社 热固性树脂组合物、其制造方法、树脂固化物的制造方法以及使环氧化合物发生自聚合的方法
EP2902441A4 (de) * 2012-09-28 2015-09-30 Mitsubishi Chem Corp Wärmehärtende harzzusammensetzung, verfahren zur herstellung davon, verfahren zur herstellung eines gehärteten harzprodukts und vorrichtung zur auslösung der selbstpolymerisierung einer epoxidverbindung
US9550877B2 (en) 2012-09-28 2017-01-24 Mitsubishi Chemical Corporation Thermosetting resin composition, method for producing same, method for producing cured resin product, and method for causing self-polymerization of epoxy compound
CN104662086B (zh) * 2012-09-28 2018-04-17 三菱化学株式会社 热固性树脂组合物、其制造方法、树脂固化物的制造方法以及使环氧化合物发生自聚合的方法
JP2017509741A (ja) * 2014-02-06 2017-04-06 モーメンティブ・パフォーマンス・マテリアルズ・インク 湿気硬化性シリコーン組成物
JP2015189825A (ja) * 2014-03-27 2015-11-02 三菱化学株式会社 熱硬化性樹脂組成物

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