JP2008053717A - 耐熱シ−ルド低電力pcmベース再プログラム可能efuseデバイス - Google Patents
耐熱シ−ルド低電力pcmベース再プログラム可能efuseデバイス Download PDFInfo
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Abstract
【解決手段】 集積回路デバイス用の電気的再プログラム可能ヒューズ(eFUSE)デバイスは、細長いヒータ要素と、細長いヒータ要素の両端部が第1および第2のヒータ電極と電気的に接触した状態のままで、細長いヒータ要素の外面を細長いヒータ要素の縦軸に沿って取り囲む電気絶縁ライナーを備える。相変化物質(PCM)は、電気絶縁ライナーの外面の一部を取り囲み、熱および電気絶縁層は、第1および第2のヒューズ電極がPCMの両端部と電気的に接触した状態で、PCMの外面を取り囲んでいる。PCMは、電気絶縁ライナー、熱および電気絶縁層、ならびに第1および第2のヒューズ電極の中に閉じ込められている。
【選択図】図4
Description
SiO 2 化学的性質 蒸着温度
TEOS Si(OC2H5)4 200℃または400℃
シラン シラン 400℃
OMCTS SiCOH 350℃
プラズマサーム シラン 200℃〜400℃
Claims (20)
- 細長いヒータ要素と、
前記細長いヒータ要素の両端部が第1および第2のヒータ電極と電気的に接触した状態のままで、前記細長いヒータ要素の外面を前記細長いヒータ要素の縦軸に沿って取り囲む電気絶縁ライナーと、
前記電気絶縁ライナーの外面の一部を取り囲む相変化物質(PCM)と、
前記PCMの外面を取り囲む熱および電気絶縁層と、
前記PCMの両端部と電気的に接触する第1および第2のヒューズ電極とを含み、
前記PCMが、前記電気絶縁ライナーと、前記熱および電気絶縁層と、前記第1および第2のヒューズ電極の中に閉じ込められている、集積回路デバイス用の電気的再プログラム可能ヒューズ(eFUSE)デバイス。 - 前記第1および第2のヒータ電極が、前記第1および第2のヒューズ電極から電気的に絶縁されている、請求項1に記載のeFUSEデバイス。
- 前記PCMが、ゲルマニウム(Ge)、アンチモン(Sb)、およびテルル(Te)(GST)の三元合金と、GeおよびSbの化合物のうちの1つである、請求項1に記載のeFUSEデバイス。
- 前記ヒータ要素が、TaxSiyNzから形成され、ここで、x、y、およびzが、前記ヒータ要素の抵抗率および熱抵抗係数を調節するために選択的に可調整である、請求項1に記載のeFUSEデバイス。
- 前記熱および電気絶縁層が、約0.008Watt・cm−1・K−1以下の熱伝導率を有する、請求項1に記載のeFUSEデバイス。
- 前記熱および電気絶縁層が、Si−C−H−Nの化合物または、熱サイクルに対して、前記Si−C−H−Nの化合物と類似の熱および電気伝導率と、前記Si−C−H−Nの化合物と類似の抵抗とを有する物質を含む、請求項5に記載のeFUSEデバイス。
- 前記電気絶縁ライナーがSiO2を含む、請求項6に記載のeFUSEデバイス。
- 集積回路デバイスであって、
前記集積回路デバイスのバック・エンド・オブ・ライン(BEOL)領域の中に形成される電気的再プログラム可能ヒューズ(eFUSE)デバイスを含み、前記eFUSEデバイスが、さらに、
細長いヒータ要素と、
前記細長いヒータ要素の両端部が第1および第2のヒータ電極と電気的に接触した状態のままで、前記細長いヒータ要素の外面を前記細長いヒータ要素の縦軸に沿って取り囲む電気絶縁ライナーと、
前記電気絶縁ライナーの外面の一部を取り囲む相変化物質(PCM)と、
前記PCMの外面を取り囲む熱および電気絶縁層と、
前記PCMの両端部と電気的に接触する第1および第2のヒューズ電極とを含み、
前記PCMが、前記電気絶縁ライナーと、前記熱および電気絶縁層と、前記第1および第2のヒューズ電極との中に閉じ込められており、前記eFUSEデバイスのプログラミングの結果、前記ヒータ要素から発生される動作温度から、前記BEOL領域の中の誘電体を保護するようになされている、前記集積回路デバイス。 - 前記第1および第2のヒータ電極が、前記第1および第2のヒューズ電極から電気的に絶縁されている、請求項8に記載の集積回路デバイス。
- 前記PCMが、ゲルマニウム(Ge)、アンチモン(Sb)、およびテルル(Te)(GST)の三元合金と、GeおよびSbの化合物のうちの1つである、請求項8に記載の集積回路デバイス。
- 前記ヒータ要素が、TaxSiyNzから形成され、ここで、x、y、およびzが、前記ヒータ要素の抵抗率および熱抵抗係数を調節するために選択的に可調整である、請求項10に記載の集積回路デバイス。
- 前記熱および電気絶縁層が、Si−C−H−Nの化合物または、熱サイクルに対して、前記Si−C−H−Nの化合物と類似の熱および電気伝導率と、前記Si−C−H−Nの化合物と類似の抵抗とを有する物質を含む、請求項11に記載の集積回路デバイス。
- 前記電気絶縁ライナーがSiO2を含む、請求項12に記載の集積回路デバイス。
- 前記eFUSEデバイスが、2ミリアンペア以下のヒータ電流で、抵抗性のアモルファス状態と、導電性の結晶状態の間での前記PCMの変換を促進するように構成されている、請求項8に記載の集積回路デバイス。
- 前記eFUSEデバイスが、約500ナノ秒以下のプログラミング中に、抵抗性のアモルファス状態と、導電性の結晶状態の間でのPCMの変換を促進するように構成されている、請求項8に記載の集積回路デバイス。
- 前記ヒータ要素の前記縦軸が、前記BEOL領域の中に水平に配設され、前記第1および第2のヒータ電極が、互いに対して同じ金属レベルの中に位置するようになされている、請求項8に記載の集積回路デバイス。
- 前記ヒータ要素の前記縦軸が、前記BEOL領域の中に垂直に配設され、前記第1および第2のヒータ電極が、互いに対して異なる金属レベルの中に位置するようになされている、請求項8に記載の集積回路デバイス。
- 細長いヒータ要素の両端部が第1および第2のヒータ電極と電気的に接触した状態のままになるように、前記細長いヒータ要素の外面を前記細長いヒータ要素の縦軸に沿って電気絶縁ライナーで取り囲むことと、
前記電気絶縁ライナーの外面の一部を相変化物質(PCM)で取り囲むことと、
前記PCMの外面を、熱および電気絶縁層で取り囲むことと、
第1および第2のヒューズ電極を前記PCMの両端部と電気的に接触するように形成することとを含み、
前記PCMが、前記電気絶縁ライナーと、前記熱および電気絶縁層と、前記第1および第2のヒューズ電極との中に閉じ込められており、前記第1および第2のヒータ電極が、前記第1および第2のヒューズ電極から電気的に絶縁されている、集積回路デバイス用の電気的再プログラム可能ヒューズ(eFUSE)デバイスを形成する方法。 - 前記PCMが、ゲルマニウム(Ge)、アンチモン(Sb)、およびテルル(Te)(GST)の三元合金と、GeおよびSbの化合物のうちの1つであり、
かつ前記ヒータ要素が、TaxSiyNzから形成され、ここで、x、y、およびzが、前記ヒータ要素の抵抗率および熱抵抗係数を調節するために選択的に可調整である、請求項18に記載の方法。 - 前記熱および電気絶縁層が、Si−C−H−Nの化合物または、熱サイクルに対して、前記Si−C−H−Nの化合物と類似の熱および電気伝導率と、前記Si−C−H−Nの化合物と類似の抵抗とを有する物質を含み、かつ前記電気絶縁ライナーがSiO2を含む、請求項19に記載の方法。
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US11/467,294 US7394089B2 (en) | 2006-08-25 | 2006-08-25 | Heat-shielded low power PCM-based reprogrammable EFUSE device |
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JP2012532451A (ja) * | 2009-07-01 | 2012-12-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 低電力多重状態電子ヒューズ(eヒューズ)をプログラミング及び再プログラミングするための回路構造体及び方法 |
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US7646006B2 (en) * | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US7545667B2 (en) * | 2006-03-30 | 2009-06-09 | International Business Machines Corporation | Programmable via structure for three dimensional integration technology |
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US7394089B2 (en) | 2008-07-01 |
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