JP2008047906A - 放射放出素子 - Google Patents

放射放出素子 Download PDF

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Publication number
JP2008047906A
JP2008047906A JP2007209632A JP2007209632A JP2008047906A JP 2008047906 A JP2008047906 A JP 2008047906A JP 2007209632 A JP2007209632 A JP 2007209632A JP 2007209632 A JP2007209632 A JP 2007209632A JP 2008047906 A JP2008047906 A JP 2008047906A
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JP
Japan
Prior art keywords
radiation
layer
filter element
emitting device
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007209632A
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English (en)
Japanese (ja)
Other versions
JP2008047906A5 (enExample
Inventor
Franz Eberhard
エーバーハルト フランツ
Stefan Groetsch
グレッチュ シュテファン
Norbert Linder
ノルベルト　リンダー
Juergen Moosburger
モースブルガー ユルゲン
Klaus Streubel
クラウス　シュトロイベル
Ralph Wirth
ラルフ　ヴィルト
Matthias Sabathil
ザバティール マティアス
Julius Muschaweck
ムシャヴェック ユリウス
Krister Bergenek
ベルゲネク クリスター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2008047906A publication Critical patent/JP2008047906A/ja
Publication of JP2008047906A5 publication Critical patent/JP2008047906A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/13362—Illuminating devices providing polarized light, e.g. by converting a polarisation component into another one
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2007209632A 2006-08-11 2007-08-10 放射放出素子 Pending JP2008047906A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006037736 2006-08-11

Publications (2)

Publication Number Publication Date
JP2008047906A true JP2008047906A (ja) 2008-02-28
JP2008047906A5 JP2008047906A5 (enExample) 2011-06-16

Family

ID=38616347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007209632A Pending JP2008047906A (ja) 2006-08-11 2007-08-10 放射放出素子

Country Status (3)

Country Link
US (1) US8354682B2 (enExample)
EP (1) EP1887634A3 (enExample)
JP (1) JP2008047906A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2012521644A (ja) * 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2014512105A (ja) * 2011-04-15 2014-05-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 偏光放射を放出する半導体チップ
US9368690B2 (en) 2013-01-24 2016-06-14 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US12477873B2 (en) 2019-01-29 2025-11-18 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12484361B2 (en) 2019-04-23 2025-11-25 Osram Opto Semiconductors Gmbh U-LED, U-LED device, display and method for the same

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DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
DE102007053297A1 (de) * 2007-09-13 2009-03-19 Osram Opto Semiconductors Gmbh Polarisierte Lichtquelle
JP5415433B2 (ja) * 2007-10-25 2014-02-12 コーニンクレッカ フィリップス エヌ ヴェ 偏光発光装置
US20100051983A1 (en) * 2008-08-29 2010-03-04 Frank Shum Polarization recycling optics for leds
DE102009009316A1 (de) 2009-02-17 2010-08-26 Infineon Technologies Ag Fotodetektor-Halbleiterbauelement, Fotoemitter-Halbleiterbauelement, optoelektronisches Übertragungssystem und Verfahren zum Übertragen eines elektrischen Signals
TWI398025B (zh) 2009-10-07 2013-06-01 財團法人工業技術研究院 偏極光發光二極體元件及其製造方法
KR100974777B1 (ko) * 2009-12-11 2010-08-06 엘지이노텍 주식회사 발광 소자
US8573804B2 (en) 2010-10-08 2013-11-05 Guardian Industries Corp. Light source, device including light source, and/or methods of making the same
DE102012204408B4 (de) * 2012-03-20 2013-10-10 Osram Gmbh Led-chip mit temperaturabhängiger wellenlänge und leuchtvorrichtung mit solchem led-chip
US20130264577A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
DE102013105905B4 (de) * 2013-06-07 2023-04-27 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip
WO2017175148A1 (en) * 2016-04-08 2017-10-12 Novagan Highly directional light source with high extraction efficiency and method to manufacturing the same
DE102019100624A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000561A5 (de) 2019-01-29 2021-12-02 Osram Opto Semiconductors Gmbh Videowand, treiberschaltung, ansteuerungen und verfahren derselben
WO2020165185A1 (de) 2019-02-11 2020-08-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
JP7604394B2 (ja) 2019-04-23 2024-12-23 エイエムエス－オスラム インターナショナル ゲーエムベーハー Ｌｅｄモジュール、ｌｅｄディスプレイモジュール、および当該モジュールを製造する方法
JP7608368B2 (ja) 2019-05-13 2025-01-06 エイエムエス－オスラム インターナショナル ゲーエムベーハー マルチチップ用キャリア構造体
KR20220007069A (ko) * 2019-05-14 2022-01-18 오스람 옵토 세미컨덕터스 게엠베하 광전자 부품, 픽셀, 디스플레이 조립체, 및 방법
CN114144727A (zh) 2019-05-23 2022-03-04 奥斯兰姆奥普托半导体股份有限两合公司 照明装置、导光装置和方法
DE102019212944A1 (de) 2019-08-28 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement, vorrichtung mit einem halbleiterbauelement und verfahren zur herstellung von halbleiterbauelementen
JP7594578B2 (ja) 2019-09-20 2024-12-04 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子構造素子、半導体構造およびそれらに関する方法
DE102020114884A1 (de) 2020-06-04 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
DE102021124146A1 (de) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips
US12327978B2 (en) 2021-09-23 2025-06-10 Osram Opto Semiconductors Gmbh Semiconductor light source with a mirror coating and method
DE102023108185A1 (de) * 2023-03-30 2024-10-02 Ams-Osram International Gmbh Optoelektronisches bauelement

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JPH06310752A (ja) * 1993-04-21 1994-11-04 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード素子
JP2003133589A (ja) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
JP2003174195A (ja) * 2001-12-07 2003-06-20 Abel Systems Inc 発光ダイオード
JP2004247411A (ja) * 2003-02-12 2004-09-02 Sharp Corp 半導体発光素子および製造方法
JP2005019646A (ja) * 2003-06-25 2005-01-20 Nichia Chem Ind Ltd 半導体発光素子及びそれを用いた発光装置
JP2005057266A (ja) * 2003-07-31 2005-03-03 Lumileds Lighting Us Llc 光取り出し効率が改善された発光装置
JP2005077505A (ja) * 2003-08-28 2005-03-24 Seiko Epson Corp 光源装置、投射型表示装置

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JPH06310752A (ja) * 1993-04-21 1994-11-04 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード素子
JP2003133589A (ja) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
JP2003174195A (ja) * 2001-12-07 2003-06-20 Abel Systems Inc 発光ダイオード
JP2004247411A (ja) * 2003-02-12 2004-09-02 Sharp Corp 半導体発光素子および製造方法
JP2005019646A (ja) * 2003-06-25 2005-01-20 Nichia Chem Ind Ltd 半導体発光素子及びそれを用いた発光装置
JP2005057266A (ja) * 2003-07-31 2005-03-03 Lumileds Lighting Us Llc 光取り出し効率が改善された発光装置
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012521644A (ja) * 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
US8921877B2 (en) 2010-08-02 2014-12-30 Stanley Electric Co., Ltd. Semiconductor light-emitting device for producing wavelength-converted light and method for manufacturing the same
JP2014512105A (ja) * 2011-04-15 2014-05-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 偏光放射を放出する半導体チップ
US9312441B2 (en) 2011-04-15 2016-04-12 Osram Opto Semiconductors Gmbh Semiconductor chip that emits polarized radiation
US9837589B2 (en) 2011-04-15 2017-12-05 Osram Opto Semiconductors Gmbh Semiconductor chip that emits polarized radiation
US9368690B2 (en) 2013-01-24 2016-06-14 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US9793455B2 (en) 2013-01-24 2017-10-17 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US12477873B2 (en) 2019-01-29 2025-11-18 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12495648B2 (en) 2019-01-29 2025-12-09 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12484361B2 (en) 2019-04-23 2025-11-25 Osram Opto Semiconductors Gmbh U-LED, U-LED device, display and method for the same

Also Published As

Publication number Publication date
EP1887634A2 (de) 2008-02-13
EP1887634A3 (de) 2011-09-07
US20080035944A1 (en) 2008-02-14
US8354682B2 (en) 2013-01-15

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