JP2008038163A5 - - Google Patents
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- JP2008038163A5 JP2008038163A5 JP2006210361A JP2006210361A JP2008038163A5 JP 2008038163 A5 JP2008038163 A5 JP 2008038163A5 JP 2006210361 A JP2006210361 A JP 2006210361A JP 2006210361 A JP2006210361 A JP 2006210361A JP 2008038163 A5 JP2008038163 A5 JP 2008038163A5
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- 239000002245 particle Substances 0.000 claims description 184
- 239000007789 gas Substances 0.000 claims description 57
- 238000006243 chemical reaction Methods 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 239000002131 composite material Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- -1 argon ions Chemical class 0.000 claims description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims description 2
- 230000000171 quenching effect Effects 0.000 claims description 2
- 239000011164 primary particle Substances 0.000 claims 7
- 238000013329 compounding Methods 0.000 claims 2
- 238000001338 self-assembly Methods 0.000 claims 2
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000000047 product Substances 0.000 description 172
- 238000009826 distribution Methods 0.000 description 56
- 230000000052 comparative effect Effects 0.000 description 48
- 239000000203 mixture Substances 0.000 description 31
- 238000003917 TEM image Methods 0.000 description 25
- 239000012467 final product Substances 0.000 description 24
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 23
- 239000012798 spherical particle Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 238000005469 granulation Methods 0.000 description 12
- 230000003179 granulation Effects 0.000 description 12
- 239000011856 silicon-based particle Substances 0.000 description 12
- 239000007858 starting material Substances 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000002114 nanocomposite Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 230000002902 bimodal effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006210361A JP4425888B2 (ja) | 2006-08-01 | 2006-08-01 | コンポジット構造を有するナノ球状粒子、粉末、及び、その製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006210361A JP4425888B2 (ja) | 2006-08-01 | 2006-08-01 | コンポジット構造を有するナノ球状粒子、粉末、及び、その製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009105947A Division JP2009215653A (ja) | 2009-04-24 | 2009-04-24 | コンポジット構造を有するナノ球状粒子、粉末、及び、その製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008038163A JP2008038163A (ja) | 2008-02-21 |
| JP2008038163A5 true JP2008038163A5 (enExample) | 2009-03-12 |
| JP4425888B2 JP4425888B2 (ja) | 2010-03-03 |
Family
ID=39173541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006210361A Active JP4425888B2 (ja) | 2006-08-01 | 2006-08-01 | コンポジット構造を有するナノ球状粒子、粉末、及び、その製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4425888B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008108265A1 (ja) * | 2007-03-05 | 2008-09-12 | Konica Minolta Medical & Graphic, Inc. | 半導体ナノ粒子の製造方法および半導体ナノ粒子 |
| US7910837B2 (en) | 2007-08-10 | 2011-03-22 | Napra Co., Ltd. | Circuit board, electronic device and method for manufacturing the same |
| JP5598836B2 (ja) * | 2009-08-03 | 2014-10-01 | 古河電気工業株式会社 | ナノサイズ粒子を含むリチウムイオン二次電池用負極材料、リチウムイオン二次電池用負極、リチウムイオン二次電池 |
| CN103170764B (zh) * | 2011-12-26 | 2015-02-18 | 北京有色金属研究总院 | 一种钎料合金粉末及其制备方法 |
| JP6434351B2 (ja) * | 2015-03-26 | 2018-12-05 | 株式会社豊田自動織機 | アモルファス含有Ｓｉ粉末及びその製造方法 |
| KR101851173B1 (ko) * | 2016-09-23 | 2018-06-05 | 한국생산기술연구원 | 금속-금속수소화물 코어-쉘 입자의 제조방법 |
| WO2021111909A1 (ja) * | 2019-12-06 | 2021-06-10 | デンカ株式会社 | 窒化ホウ素粒子及びその製造方法 |
| WO2021111910A1 (ja) * | 2019-12-06 | 2021-06-10 | デンカ株式会社 | 窒化ホウ素粒子及びその製造方法 |
-
2006
- 2006-08-01 JP JP2006210361A patent/JP4425888B2/ja active Active
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