JP2008004886A - Substrate having conductor layer pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems of, on a conductor layer, the dependence of glare on a viewing angle and contrast in appearance, and the problem of insufficient adhesion between resin or the like and a cover film when the cover film is stacked on the conductor layer with the resin or the like, on a substrate having a conductor layer pattern obtained by a transfer method. <P>SOLUTION: A substrate 52 having a conductor layer pattern with a geometric shape includes a conductor layer 50 partially or entirely shaped like a U-tube in a cross section orthogonal to the length of the conductor layer 50. It is preferable that the conductor layer pattern has a width of 5 to 30 μm, has the maximum height from the bottom end of the conductor layer 50 on both ends of the cross-sectional structure of the conductor layer or between the midpoint and both ends, and has the minimum height of ≥50% and <99% of the maximum height from the bottom end of the conductor layer in the recess of the conductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electromagnetic wave shielding member, a substrate with a conductor layer pattern useful for other applications, an electromagnetic wave shielding member and a display using the same.

  Various methods have been proposed for shielding electromagnetic waves on the walls of public facilities, halls, hospitals, schools, corporate buildings, houses, etc., glass windows, resin panels, display surfaces of displays that generate electromagnetic waves, and the like. For example, a method of applying an electromagnetic shielding coating over the surface to be shielded, a method of bonding a metal foil on the surface to be shielded, an electromagnetic shielding sheet formed by thermally laminating a metal-plated fiber mesh on a resin plate, In general, a method of bonding to a surface, a method of bonding conductive fibers knitted in a mesh shape to a surface to be shielded, and the like are performed.

Among these, when shielding the electromagnetic wave on the transparent glass surface, the transparent resin panel surface, the display surface of a display such as a cathode ray tube (CRT) or a plasma display panel (PDP), the electromagnetic shielding member is required to be as thin as possible. In addition, an electromagnetic wave shielding member having a metal mesh as an electromagnetic wave shielding layer has been used as a material capable of achieving both light transmittance (transparency) and electromagnetic wave shielding properties opposite to this in a balanced manner.
As a method for producing an electromagnetic wave shielding member having a metal mesh as an electromagnetic wave shielding layer, etching of a metal foil by a photolithographic method is mainly used at present, but on the other hand, a plating method using a transfer plate is being studied ( Patent Literatures 1 to 3).

JP 2003-103696 A JP 2004-109948 A JP 2006-32686 A

  In these production methods, it has been difficult to balance the adhesion of the plated metal to the transfer plate and the transfer of the deposited metal to the film. In addition, the transferred conductor layer in the shape of the geometrical diagram has problems in appearance such as the viewing angle dependency of the glare and the contrast. Moreover, when a cover film was laminated | stacked through resin etc. on the obtained conductor layer of geometric figure shape, there existed problems, such as inadequate adhesiveness with this resin or cover film.

  In view of such problems, the present invention provides a substrate with a geometrical figure-shaped conductor layer pattern capable of overcoming the above problems, an electromagnetic wave shielding member and a display using the same.

The present invention relates to the following.
1. A conductor layer pattern having a conductor layer pattern in which the cross-sectional structure of the conductor layer orthogonal to the longitudinal direction of the conductor layer is a U-shaped tube shape in all or a part of the conductor layer pattern in a geometric diagram shape With base material.
2. Item 2. The substrate with a conductor layer pattern according to Item 1, wherein the conductor layer pattern has a width of 5 to 30 µm.
3. In the cross-sectional structure of the conductor layer pattern, the conductor layer cross-sectional structure has the highest height from the lowest end of the conductor layer between the middle part and both end parts, and the conductor layer recess has a height from the lowest conductor layer. Item 3. The substrate with a conductor layer pattern according to Item 1 or 2, wherein the minimum height is 30% or more and less than 99% of the maximum height.
4). Item 4. The substrate with a conductor layer pattern according to Item 3, wherein the minimum height is 1 to 20 μm.
5. A substrate with a conductor layer pattern, wherein a conductor layer pattern having a geometric diagram shape is bonded to a transparent substrate via a resin layer.
6). Item 6. A translucent electromagnetic wave shielding member obtained by bonding a surface having a conductor layer pattern of a substrate with a conductor layer pattern according to any one of the substrates with a conductor layer pattern according to any one of Items 1 to 5 to a transparent substrate.
7). Item 6. A translucent electromagnetic wave shielding member obtained by coating the conductor layer pattern of the substrate with a conductor layer pattern according to any one of Items 1 to 5 with a resin.
8). Item 6. A plasma display obtained by bonding the substrate with a conductor layer pattern according to any one of Items 1 to 5 on a display surface.
9. Item 8. A plasma display comprising the translucent electromagnetic wave shielding member according to Item 6 or 7 disposed on the entire surface.

Although the base material with a conductor layer pattern according to the present invention is considered to reduce the viewing angle dependency of reflected light due to the U-shaped conductor layer, the appearance characteristics such as glare and contrast are reduced. improves. When the U-shaped conductor layer is coated by resin coating, adhesive film lamination, or the like, adhesion can be improved by an anchor effect on the U-shaped coating material.
Therefore, the electromagnetic wave shielding member and display using the base material with a conductor layer pattern of the present invention can also exhibit the same effect.
Moreover, when producing the base material with a conductor layer pattern of the present invention by a transfer method, both plating adhesion and transferability can be achieved. The reason why such an effect is manifested is that the deposited plating has an inverted U-shaped tube shape, and therefore, moderate adhesion between the conductive substrate (plate) for plating, which is a prototype of the conductor layer pattern, and This is considered to be because the balance of peelability can be easily achieved.

The geometric figure shape conductor layer pattern in the present invention means that the figure drawn on the conductor layer is a geometric figure. In all or part of the conductive layer pattern, the cross-sectional structure of the conductor layer orthogonal to the longitudinal direction of the conductor layer may be said to be U-shaped. The U-shaped tube shape has a recess at the center in the cross-sectional shape. The width of the concave portion is not reduced as it advances in the distal direction, and the width of the concave portion is larger at the upper portion than at the lower portion as a whole.
If the concave portion is on the surface side, the outer side is not necessarily curved. Near the ends of the width, the outer shape is preferably curved or polygonally curved.
Furthermore, in the cross-sectional structure of the conductor layer of the geometrical figure shape on the substrate, the conductor layer has the highest height at or near both end portions, and the lowest height is 30% or more and less than 99% of the highest height. And is preferably 40 to 95%, more preferably 50 to 90%.

Here, as a reference plane for determining the position of the uppermost end of the plated metal, the position of the lowermost end of the conductor layer, etc., (1) the surface of the transparent substrate (2) a horizontal plane or a vertical plane can be used. In many cases, the surface of the transparent substrate is not deformed and is easily adopted as a reference surface. It is also possible to place or fix a sample for cross-sectional observation on a horizontal plane or a vertical plane and observe it. The horizontal plane or the vertical plane can be set using an appropriate table or the like.
Specifically, the cross section of the substrate with the conductor layer pattern is observed by setting the microscope magnification to an appropriate magnification between 200 and 5000 times so that the surface of the transparent substrate can be observed. It is possible to perform the measurement related to the above by confirming and appropriately observing a detailed cross section after increasing the magnification after photography. The cross section can be observed by a normal method. In other words, a part of the base material with a conductor layer pattern is cut out to make a sample, and this sample is cast with epoxy resin, etc., and after cutting the cast sample so as to be orthogonal to the observation surface, the cut surface can be observed. It is sufficient to polish until When checking the reference plane, it is recommended to copy the ruler and other standards at the same time.

First, the method for producing a substrate with a conductor layer pattern according to the present invention will be described in detail.
The base material with a conductor layer pattern according to the present invention has a convex part pattern and a geometrical figure-shaped concave part drawn thereby, and a concave part surface at a position lower than a position 0.5 to 5 μm lower than the upper end of the convex part. The insulating layer is formed on the plating, the width of the exposed portion of the conductive substrate of the convex portion is 1 μm to 40 μm, and the height of the convex portion after applying the insulating layer to the concave portion is 10 μm or more. The method includes a step of depositing a metal on a conductive base material for electroplating by electroplating or electroless plating and a step of transferring the metal deposited on the upper surface of the convex portion of the conductive base material to another base material. be able to.
The conductive material used for the conductive substrate (plate) for plating has sufficient conductivity to deposit a metal on its surface by electroplating, and is particularly preferably a metal. Moreover, it is preferable that the base material is such that the metal layer formed thereon is easily peeled off so that the metal layer formed by electroplating on the surface can be transferred to the adhesive support. . The conductive base material is particularly preferably made of stainless steel, chrome-plated cast iron, chrome-plated steel, titanium, titanium-lined material, nickel or other material having good plating releasability.

  Examples of the conductive base material necessary for forming the conductive layer having the geometric shape having conductivity include a sheet shape, a plate shape, a roll shape, and a hoop shape. In the case of a roll, a sheet or plate attached to a rotating body (roll) may be used. In the case of a hoop shape, a configuration in which rolls are installed at two to several locations inside the hoop and a hoop-shaped conductive base material is passed through the roll can be considered. Since it is possible to continuously produce a metal foil in both a roll shape and a hoop shape, the production efficiency is higher than that in a sheet shape or a plate shape, which is preferable.

  The conductor layer having the above-described geometric diagram corresponds to the electromagnetic wave shielding layer when the electromagnetic wave shielding member is finally produced. This shape includes triangles such as regular triangles, isosceles triangles, right triangles, squares, rectangles, rhombuses, parallelograms, trapezoids, and other squares, (positive) hexagons, (positive) octagons, (positive) twelve It is a combination of squares, (positive) n-gons such as (positive) icosahedron (n is an integer of 3 or more), circles, ellipses, stars, etc. These units can be used alone or in combination of two or more It can be repeated in combination.

  From the viewpoint of electromagnetic wave shielding, the triangle is most effective. From the viewpoint of visible light transmission, if the number of (positive) n-gons is larger, the aperture ratio of the conductor layer pattern increases with the same line width. The aperture ratio is required to be 50% or more from the viewpoint of visible light transmission, and the aperture ratio of the conductor layer pattern is more preferably 50% or more. The aperture ratio of the conductor layer pattern is determined from the effective area of the electromagnetic shielding material to the conductive layer from the effective area with respect to the effective area of the electromagnetic shielding material (for example, the area that functions effectively for electromagnetic shielding such as the area in which the geometric figure is drawn). It is the percentage of the area ratio minus the area covered.

As a method of forming a geometric figure of a concave portion with respect to a convex portion on a conductive base material, a conductive base material having a smooth surface, for example, a flat conductive base material, from the above geometric figure The method of processing so as to form a concave portion is the simplest.
FIG. 1 is a perspective view showing an example of a conductive base material on which a geometric figure of a concave portion with respect to a convex portion is formed. The example illustrated in FIG. 1 is a square as a geometrical figure of the concave part 2, and the convex part 3 is formed in a lattice shape on the conductive substrate 1 so that the geometrical figure of the concave part 2 becomes a square. .
2 and 3 show the AA cross section of FIG. 1, and four types (a) to (d) are shown in FIG. The cross-sectional shapes of the concave portion 2 and the convex portion 3 are appropriately determined, and the side surface 5 of the convex portion 3 is a slope (in the case of (a), (b)), a curved surface (in the case of (c)), a stepped slope ((d ))) Etc. are arbitrary. Also, the bottom surface of the recess 2 has various shapes. In all of these, the side surface of the convex portion has an inclination angle at least at the tip portion. This inclination angle is α in the figure, and preferably corresponds to 30 ° to 80 °, more preferably 50 ° or more.
The upper surface 4 of the convex portion 3 does not necessarily have to be a flat surface, and the entire upper surface or a part of the upper surface may be deformed from the flat surface. In this case, it is preferable that the upper surface 4 is curved as smoothly as possible. Here, the tip portion of the convex portion means the surface of the convex portion from the most advanced portion of the convex portion to a position 0.5 to 5 μm lower.
The reference surface of the angle α is the upper surface of the convex portion, the horizontal surface or the vertical surface. When an original conductive substrate having a (substantially) uniform thickness is used and a convex pattern is applied to this one surface, the other surface can be used as a reference surface.
It is also possible to place or fix a sample for cross-sectional observation on a horizontal plane or a vertical plane and observe it. The horizontal plane or the vertical plane can be set using an appropriate table or the like.
Further, a flat plate that does not bend can be placed on the conductive base material having the convex portion, and the surface of the flat plate can be used as a reference plane. If the conductive base material is a cylinder, prepare a cylinder (reference cylinder) whose cross section is larger than that of the cylinder, place the reference cylinder sideways, and pass these through the conductive base material into the reference cylinder. It is also possible to overlap the cylinders so that the vertices of the cross-sectional circles of the reference cylinder are horizontal, and the tangent surface in contact with the vertices of the cylinder can be used as the reference surface.
Specifically, the observation of the cross-section of the conductive substrate can be performed with an appropriate magnification of the microscope so that the upper surface of the convex portion can be observed, the other surface (surface) of the conductive substrate can be observed, or , By checking the reference plane so that the reference object can be observed, appropriately increasing the magnification after photography, observing a detailed cross section (cross section with a lower magnification in some cases), and taking a photograph, Measurements regarding the angle α can be made. When checking the reference plane, it is recommended to copy the ruler and other standards at the same time.
The reference plane described above can also be used as a reference plane for measuring thickness, height and width. Further, in many cases, the surface of another base material is not deformed and is easily adopted as a reference surface.

The width of the tip portion of the convex portion formed on the conductive substrate (plate) and the interval between the convex portion are 1 μm to 40 μm in width so that the opening ratio of the conductor layer pattern is 50% or more. It is preferable that the center interval (line pitch) of the tip part of the part is 100 μm to 1000 μm.
In the present invention, when the center interval (line pitch) of the tip portion of the convex portion cannot be easily determined because the pattern is a complicated figure or a combination of a plurality of figures, the repeating unit of the pattern is used. As a reference, the area is converted into a square area and defined as the length of one side.

  The height of the convex portion 3 formed on the conductive substrate is defined as the height from the most depressed portion of the concave portion 2 to the tip of the convex portion 3. As for the height of the convex part 3, 11 micrometers or more are preferable. This is because the recess has a sufficient depth even if an insulating layer is formed in the recess. Further, the upper limit of the height of the convex portion 3 is preferably 110 μm. As the height of the convex portion is increased, the aspect ratio increases, so that the processing becomes difficult and the processing cost increases. Therefore, the height of the convex portion is particularly preferably 60 μm or less.

Examples of the method for forming the convex portion on the conductive substrate include the following methods.
(1) A portion of the conductive base material where the concave portion should be formed (a portion corresponding to the opening of the conductive layer pattern of the base material with the conductive layer pattern) is directly irradiated with laser light to form a concave portion, and the conductive layer pattern A method of forming a convex portion corresponding to
(2) After conducting a step of forming a geometrical pattern (resist pattern) with a photo-curable resin or a thermosetting resin on a conductive substrate by a photolithographic method or a printing method, Etching method,
(3) There is a method of excavating a portion (a portion corresponding to the opening portion of the conductor layer pattern of the substrate with the conductor layer pattern) where the concave portion of the conductive substrate is to be formed by engraving.
When the material of the conductive substrate is hard, it is preferable to use the above method (1) (laser processing method) or the method (2) (etching method) for direct processing, but it is soft and easy to process such as copper. When an excellent material is used, it can be easily processed by the method (3) (engraving method). At this time, after processing, a hard plating such as chrome is applied to the surface to increase the strength. it can.

In the method (2), when a printing method is used, various methods can be used as a resist pattern printing method. For example, screen printing, letterpress printing, letterpress offset printing, letterpress reversal offset printing, intaglio printing, letterpress printing, ink jet printing, flexographic printing, and the like can be used. As the resist, a photocurable or thermosetting resin can be used.
In the case of using the photolithographic method, a dry film resist or the like is laminated, a mask is attached, exposed, developed, and then a resist film etching process can be performed. After drying or pre-curing, the resist film can be subjected to an etching process after a mask is attached, exposed and developed. If the patterning can be performed by irradiating the photocurable resin with active energy rays through a mask, the mode is not limited. From the viewpoint of productivity, the method of laminating a dry film resist and exposing it through a mask when the size of a plate is large or when it is produced by roll-to-roll (Roll-to-Roll), etc. Preferably, when processing directly on a plating drum or the like, a method of directly exposing with a laser or the like without passing through a mask after pasting a dry film resist or applying a liquid resist is preferable.
Moreover, the etching of the conductive substrate in the method (2) can be performed using an etching solution. There are various types of etching liquids depending on the material of the conductive metal, and since etching liquids are commercially available for the respective metals, they can be used. For example, if the conductive metal is stainless steel, it is common to use ferric chloride, and if it is titanium, a hydrofluoric acid-based etching solution is often used. Regarding the etching of stainless steel, a liquid having a specific gravity of ferric chloride in the range of 40 ° Be (Baume) to 60 ° Be (Baume) is preferably used. If the specific gravity is low, the etching speed is fast, but the side etching is large, so that the concave portion tends to become shallow. Conversely, if the specific gravity is high, the etching speed is slow, but the side etching is small and the concave portion tends to be deep. . Therefore, the specific gravity of the etching solution is more preferably 45 ° Be (Baume) to 50 ° Be (Baume). Moreover, since etching speed will fall and productivity will fall when etching temperature is low, it is preferable that it is 40 degreeC or more. Furthermore, if the etching temperature exceeds 60 ° C., the corrosiveness of the etching solution increases, so that the equipment investment such as making the etching tank made of titanium increases. Therefore, the etching temperature is preferably 60 ° C. or less.
The remaining resist can be stripped using a stripping solution or the like after the conductive substrate is etched.

The conductive base material for plating is covered with an insulating layer with its recess leaving a part.
When plating is performed on the conductive substrate for plating, the plating grows isotropically, and therefore deposits so as to cover the insulating layer in the vicinity of the exposed portion of the convex portion. Plating that covers the insulating layer causes stress to be applied to the insulating layer every time it is peeled and transferred. Therefore, when an insulating layer is formed on the entire surface of the concave portion, the stress applied to the insulating layer at the time of transfer is the largest in the vicinity of the exposed portion of the convex portion. The stress applied to the layer can be reduced, and as a result, the lifetime of the electroconductive substrate for plating in which the concave portion is covered with the insulating layer can be improved. If the tip of the convex part is exposed too little, the effect of improving the service life is small, and if it is too large, plating may be deposited deeply on the side surface and transfer defects may occur. The distance from the leading edge of the convex part to the position 0.5 to 5 μm lower is preferable, and the position to the position 0.5 to 3 μm lower is still more preferable.

  In addition, in order to extend the life of the convex pattern, when transferring the metal deposited on the exposed portion of the convex part to another base material, the adhesive surface of the other base material and the concave part of the conductive base material are transferred. It is preferable to reduce contact of the formed insulating layer. Therefore, it is preferable that the height of the convex portion after applying the insulating layer is sufficient. The thickness of the insulating layer is preferably in the range of 1 μm to 10 μm. When the insulating layer is too thick, the time for forming the insulating layer becomes long, so that the working efficiency is lowered. In addition, if the insulating layer is too thin, the adhesion between the insulating layer and the conductive substrate is reduced, and pinholes are likely to be generated. Become.

The structure of the conductive substrate for plating (plate) having an insulating layer will be described with reference to the drawings. FIG. 4 is a cross-sectional view showing an example of a conductive substrate having a pattern of convex portions and a concave portion having a geometric diagram shape drawn thereby according to the present invention. However, the shape of the recess will be described with reference to FIG. In FIG. 4, three forms of (a), (b), and (c) are shown. In any case, the conductive substrate 1 has a concave portion 2 with respect to the convex portion 3. An insulating layer 6 is formed in the concave portion 2, and the insulating layer 6 is formed along the side surface 5 of the convex portion, but is not formed at the tip portion of the convex portion 3. The tip is exposed.
In the figure, h ′ is the height of the above-mentioned convex portion. h is the height of the convex portion after the insulating layer is applied to the concave portion (hereinafter referred to as “insulating height”). t indicates the thickness of the insulating layer. The height h ′ of the convex portion is preferably 11 μm to 110 μm, and more preferably 60 μm or less. The insulation height h is preferably 10 to 100 μm, and t is determined such that h ′ is smaller than h, but is preferably 10 μm or less. It is preferable that the thickness is 1 to 10 μm at the end portion. Further, the tip portion of the convex portion is exposed. As for the degree of exposure of the tip portion of the convex portion, the width d is preferably 1 to 40 μm, and the distance (height direction) s from the tip of the convex portion is preferably 0.5 to 5 μm, More preferably, it is 0.5-3 micrometers. Because of this distance s, the stress applied to the insulating layer at the time of peeling can be reduced.
The insulating layer is preferably a thin film insulating layer, and preferably has a uniform thickness in order to eliminate non-uniformity in strength.
FIG. 5 is a cross-sectional view showing an example of a conductive substrate having a pattern of convex portions and a concave portion of a geometric diagram drawn by the pattern in the present invention.
As shown in FIG. 5, when the side surface of the convex portion is a vertical surface, the insulating layer is applied to the concave portion in the above-described manner, and the tip portion of the convex portion is exposed. .
If the insulation height h is too low, the transfer substrate contacts the conductive substrate during transfer and damages the transfer substrate, or the transfer substrate is provided with an adhesive surface on the conductive substrate. Since it becomes easy to come into contact with the layer and a peeling stress is applied to the insulating layer, the insulating layer may peel off when repeatedly used.

であることが好ましく、ｄ_１０は０．８３９×ｈ_１０以上であることがより好ましい。
図６（ａ）では、導電性基材の凸部３として、断面が台形上のものとして模式的に図示したが、（ｂ）に示すように凸部３の表面が凸凹であってもよい。また、絶縁層の表面は、（ａ）では平面の組み合わせとして模式的に図示されているが、これも（ｂ）に示すように凹凸のある面の組み合わせであってもよい。なお、図６では、上下方向を強調して引き延ばし気味に図示してある。
また、図６中、前記第２の位置は、先端部分の側面に位置するように図示されているが、場合により、第２の位置が凸部の上面に位置していてもよい。 FIG. 6 is a cross-sectional view showing an example of the vicinity of the tip portion of the convex portion of the conductive substrate in the present invention. In FIG. 6, the tip portion of the convex portion 3 is exposed, and the side surface 5 below it is covered with an insulating layer 6. It is preferable that at least the exposed portion of the convex portion 3 does not increase in width as it advances in the tip direction, and as a whole, the width is smaller at the upper portion than at the lower portion of the convex portion. The exposed portion of the convex portion is near the end of the insulating layer, for example, the end of the insulating layer on the side surface of the convex portion (first position) and the inner side in the width direction by an amount corresponding to 10% of the exposed width of the convex portion The relationship between the distance d _{10 in} the width direction between the first position and the second position with respect to h ₁₀ in the height direction distance from the position of the convex surface (second position) in FIG. _{relationship)} d _{10 / h} 10 width _{d 10} to the height _{h 10} is preferably equivalent to 30 ° to 80 ° at an angle, and more preferably 50 ° or more.
D ₁₀ is

It is preferable that d ₁₀ is 0.839 × h ₁₀ or more.
In FIG. 6A, the convex portion 3 of the conductive base material is schematically illustrated as having a trapezoidal cross section, but the surface of the convex portion 3 may be uneven as shown in FIG. 6B. . Moreover, although the surface of the insulating layer is schematically illustrated as a combination of planes in (a), it may be a combination of uneven surfaces as shown in (b). In FIG. 6, the vertical direction is emphasized and is shown to be stretched.
In FIG. 6, the second position is illustrated so as to be positioned on the side surface of the tip portion. However, the second position may be positioned on the upper surface of the convex portion depending on circumstances.

When the side surface of the convex portion has an inclination as described above, the plating (metal) deposited by electroplating on the exposed portion of the convex portion of the conductive base material for plating is easier than when it is not, It can be peeled off and transfer can be performed smoothly.
In addition, when plating is performed on the conductive substrate, the plating grows isotropically, so that the plating is also deposited when the convex side surface of the conductive substrate is exposed. When the transfer substrate is peeled after bringing the adhesive surface of the transfer substrate into contact with the plating, when the stress is applied to the plating layer in an oblique direction, the peeling occurs when the angle of the convex portion exceeds 80 °. During (transfer), the resistance becomes too large, and transfer failure may occur. From this, the angle of the convex portion is preferably in the range of 30 ° to 80 °, and more preferably 50 ° to 80 °. The copper plating peeled at this time has a U-shaped tube shape as described above.
Correspondingly, it is preferable that the concave portion of the conductor layer in the substrate with a conductor layer pattern in the present invention has an inverse inclination. That is, it is preferable that the inclination near the tip of the recess is opened outward at an angle of preferably 30 ° to 80 °, more preferably 50 ° to 80 ° when the opening of the recess is directed upward.

As the insulating material for the insulating layer used in the present invention, a material having high adhesion to metal and strong chemical resistance is preferably used. In the step of electroplating or electroless plating, a material strong against both acid resistance and alkali resistance is particularly preferable because it is immersed in a pretreatment liquid or a plating liquid. Examples of such resins include aniline formaldehyde resin, urea formaldehyde resin, phenol formaldehyde resin, ligrin resin, xylene formaldehyde resin, xylene formaldehyde resin, melamine formaldehyde resin, epoxy resin, urea resin, aniline. Resins, melamine resins, phenol resins, formalin resins, metal oxides, metal chlorides, oximes, alkylphenol resins, and the like are used, and these are self-curing (a curing catalyst may be used).
As the thermosetting resin, one using a curing agent can be used. Examples of such a resin include a resin having a functional group such as a carboxyl group, a hydroxyl group, an epoxy group, an amino group, and an unsaturated hydrocarbon group, and a functional group such as an epoxy group, a hydroxyl group, an amino group, an amide group, a carboxyl group, and a thiol group. Some of them are used in combination with a curing agent having a group or a curing agent such as metal chloride, isocyanate, acid anhydride, metal oxide, and peroxide. In addition, a general-purpose additive such as a catalyst can be used for the purpose of increasing the curing reaction rate. Specific examples include curable acrylic resin compositions, unsaturated polyester resin compositions, diallyl phthalate resins, epoxy resin compositions, polyurethane resin compositions, and the like. Examples of the method for forming the insulating layer include brush coating, spray coating, and dipping, then scraping off the resin with a squeegee or blade and drying the resin.

Furthermore, as the insulating material, an electrodeposition paint may be used because of the uniformity of the film, the ease of formation, and the low environmental burden.
The electrodeposition paint can be used in any known cationic type or anionic type, and here, an example of the electrodeposition paint that can be used is shown.
Cationic electrodeposition coatings include cathodic deposition type thermosetting electrodeposition coatings prepared by preparing pastes of resins with basic amino groups, neutralizing them with acids, and then making them water-soluble (dispersed in water). Is done. The cationic electrodeposition coating is applied using the conductive substrate (object to be coated) as a cathode.
Resins having basic amino groups include epoxy groups such as bisphenol type epoxy resins, epoxy group (or glycidyl group) -containing acrylic resins, glycidyl ethers of alkylene glycols, epoxidized polybutadiene, and epoxidized products of novolak phenol resins. Polymers obtained by adding an amine compound to the epoxy group (oxirane ring) of the resin or an unsaturated compound having a basic amino group (for example, dimethylaminoethyl methacrylate, N-vinylpyrazole, N-diethylaminoethyl acrylate, etc.) A reaction product of a glycol component containing a tertiary amino group-containing glycol (for example, N-methyldiethanolamine) as a component of a glycol with a polyisocyanate compound, and further a reaction between an acid anhydride and a diamine compound. There By producing include those obtained by introducing an amino group to the resin. Here, the above-described amine compound is a basic amine compound, which is an aliphatic, alicyclic or araliphatic primary or secondary amine, alkanolamine, tertiary amine, quaternary. Examples include amine compounds such as ammonium salts.
Moreover, a crosslinking agent can be mix | blended with a cationic electrodeposition coating material. As the crosslinking agent, a blocked polyisocyanate compound is well known. However, when the coating film is heated (about 140 ° C. or higher), the blocking agent is dissociated and the isocyanate group is regenerated, and in the cationic resin as described above, It is cured by crosslinking reaction with a reactive group with an isocyanate group such as a hydroxyl group.
In addition, for cationic electrodeposition paints, pigments (colored pigments, extender pigments, rust preventive pigments, etc. The amount of pigment is preferably 40 parts by weight or less per 100 parts by weight of resin solids), hydrophilic solvent, water, added An agent etc. can be mix | blended as needed.
The cationic electrodeposition paint is preferably diluted with deionized water or the like so that the solid content concentration is about 5 to 40% by weight, and the pH is preferably adjusted within the range of 5.5 to 8.0. Cationic electrodeposition paints using the cation type electrodeposition paint thus prepared can usually be carried out using the substrate as a cathode under conditions of a bath temperature of 15 to 35 ° C. and a load voltage of 100 to 400V. In general, the baking temperature of the coating film is suitably in the range of 100 to 200 ° C.

The anionic electrodeposition paint is preferably an anodic deposition electrodeposition paint based on a resin having a carboxyl group, neutralized with a basic compound, and water-solubilized (water-dispersed). Painted with the (coating object) as the anode.
As resins having carboxyl groups, maleated oil resins obtained by adding maleic anhydride to drying oils (such as linseed oil, dehydrated castor oil, tung oil), and anhydrous in polybutadiene (1,2-type, 1,4-type, etc.) Maleated polybutadiene added with maleic acid, resin obtained by adding maleic anhydride to unsaturated fatty acid ester of epoxy resin, high molecular weight polyhydric alcohol (molecular weight of about 1000 or more, epoxy resin partial ester and styrene-allyl alcohol copolymer) And the like), resins obtained by adding polybasic acids (trimellitic anhydride, maleated fatty acids, maleated oils, etc.), carboxyl group-containing polyester resins (including those modified with fatty acids), carboxyl group-containing acrylic resins , Polymerizable unsaturated monomers containing glycidyl groups or hydroxyl groups and unsaturated fats Examples thereof include resins obtained by adding maleic anhydride or the like to a polymer or copolymer formed using a reaction product with an acid, and the carboxyl group content is generally about 30 to 200 in terms of acid value. A range is suitable.

  Moreover, a crosslinking agent can be mix | blended with an anion type electrodeposition coating material. As a crosslinking agent, low molecular weight melamine resins, such as hexakis methoxymethyl melamine, butoxylated methyl melamine, and ethoxylated methyl melamine, can be used as needed. Furthermore, anionic electrodeposition paints include pigments (colored pigments, extender pigments, rust preventive pigments, etc. The amount of pigment is preferably 40 parts by weight or less per 100 parts by weight of resin solids), hydrophilic solvents, water Additives can be blended as necessary.

  For the anionic electrodeposition coating, it is preferable to adjust the solid content concentration to about 5 to 40% by weight with deionized water or the like, and maintain the pH in the range of 7 to 9 for use in anion electrodeposition coating. Anionic electrodeposition coating can be carried out according to a conventional method, and for example, it can be carried out with the object to be coated as an anode under conditions of a bath temperature of 15 to 35 ° C. and a load voltage of 100 to 350 V. The anion electrodeposition coating film can be cured by heating in the range of 100 to 200 ° C., preferably 140 to 200 ° C. in principle. However, when an air-dried unsaturated fatty acid-modified resin is used, it is dried at room temperature. It can also be made.

  Furthermore, as the insulating layer used in the present invention, the insulating layer has an insulating property among materials mainly composed of carbon, for example, a carbon thin film similar to diamond, so-called diamond-like carbon (hereinafter referred to as a DLC thin film). It can also be made of a material. The DLC thin film is particularly preferable because it can be etched with oxygen plasma and has excellent chemical resistance.

As a method for forming the DLC thin film, a dry coating method such as a physical vapor deposition method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical vapor deposition method such as a plasma CVD method can be adopted. A plasma CVD method using a high frequency capable of controlling the film temperature from room temperature is particularly preferable.
In order to form the DLC thin film by the plasma CVD method, a hydrocarbon-based gas is preferably used as a carbon source as a raw material. For example, alkane gases such as methane, ethane, propane, butane, pentane, hexane, alkene gases such as ethylene, propylene, butene, pentene, alkadiene gases such as pentadiene, butadiene, acetylene, methylacetylene, etc. Alkyne gases, aromatic hydrocarbon gases such as benzene, toluene, xylene, indene, naphthalene and phenanthrene, cycloalkane gases such as cyclopropane and cyclohexane, cycloalkene gases such as cyclopentene and cyclohexene, methanol And alcohol gases such as ethanol, ketone gases such as acetone and methyl ethyl ketone, and aldehyde gases such as methanal and ethanal. The said gas may be used independently and may use 2 or more types together. Also, a mixture of the above-mentioned carbon source and hydrogen gas as a raw material gas containing carbon and hydrogen as elements, and a mixture of the above-described carbon source and a compound gas consisting of only carbon and oxygen, such as carbon monoxide gas and dioxide gas. , A mixture of a compound gas composed of only carbon and oxygen, such as carbon monoxide gas and carbon dioxide gas, and a hydrogen gas, a compound gas composed of only carbon and oxygen, such as carbon monoxide gas and carbon dioxide gas, and oxygen Examples thereof include a mixture with gas or water vapor. Further, these source gases may contain a rare gas. The rare gas is a gas composed of an element belonging to Group 0 of the periodic table, and examples thereof include helium, argon, neon, and xenon. These rare gases may be used alone or in combination of two or more.

The insulating layer may be formed entirely by the above-described insulating DLC thin film, but it improves the adhesion of the DLC thin film to a conductive substrate such as a metal plate, thereby improving the durability of the insulating layer. In order to further improve, it is preferable to insert an intermediate layer composed of one or more components selected from Ti, Cr, W, Si, nitrides or carbides thereof, or the like, between the two.
The Si or SiC thin film has excellent adhesion to, for example, a metal such as stainless steel, and also forms SiC at the interface with the insulating DLC thin film laminated thereon to improve the adhesion of the DLC thin film. Has the effect of improving.
The intermediate layer can be formed by the dry coating method as described above.
The thickness of the intermediate layer is preferably 1 μm or less, and more preferably 0.5 μm or less in consideration of productivity. A coating of 1 μm or more is not suitable because the coating time becomes long and the internal stress of the coating film increases.
By combining the DLC coating and the above-described electrodeposition paint, pinholes (minute insulating film defects) can be reduced.

The manufacturing method of the electroconductive base material for plating in this invention is demonstrated using drawing.
FIG. 7 to FIG. 9 are cross-sectional views showing an example of a process showing a method for producing a conductive substrate for plating. In these, it illustrates using the electroconductive base material which has the cross-sectional shape shown in FIG.2 (c).
First, the photocurable resin layer 7 is formed on both surfaces of the conductive substrate 1 (FIG. 7A). The photocurable resin layer 7 on one surface of the conductive substrate 1 is patterned using a photolithographic method (FIG. 7B). By etching the conductive substrate using the patterned photocurable resin layer 7 as an etching resist, the etched conductive substrate shown in the figure is obtained (FIG. 7C). At this time, the inclination angle of the side surface 5 of the convex portion 2 can be adjusted (at least at the tip portion of the convex portion). The inclination angle can be adjusted by optimizing the specific gravity of the ferric chloride solution, which is an etching solution, and the etching temperature. Next, the etching resist is removed by dipping in an alkaline aqueous solution such as sodium hydroxide or sodium carbonate (FIG. 7D).

Next, an adhesive film 9 capable of peeling off one surface of the conductive substrate 1 is bonded and protected, and the entire surface of the etched surface is covered with an insulating layer 8 (FIG. 8E). Thereafter, a mask layer 10 for plasma etching is formed on the insulating layer (FIG. 8F).
Since the insulating layer is not etched at the portion where the mask layer is formed, the mask layer 10 on the insulating layer 8 formed at the tip of the convex portion 3 of the conductive substrate 1 is removed (FIG. 8G )).
This partial removal of the mask layer 10 is removed in consideration of the width of the tip portion exposed by the protrusion 3. When the convex portion has a planar or substantially planar upper surface, it is preferable that the width of the exposed insulating layer be larger than the width of the upper surface (FIG. 8G). Thereby, in the next partial removal of the insulating layer 8, it becomes easy to remove the insulating layer on the side surface portion near the upper surface of the convex portion 3. In particular, when the mask layer 10 is removed by polishing, the result is as shown in FIG.

Next, by performing dry etching on the insulating layer, the insulating layer 8 formed at the tip portion of the convex portion 3 can be removed, thereby exposing the tip portion of the convex portion 3 ((FIG. 9). (H)).
In particular, when plasma etching is performed with oxygen gas, the conductive base material becomes a stopper layer. When the convex portion has a planar or substantially planar upper surface, if the insulating layer in a portion exceeding the width of the upper surface of the convex portion 3 is exposed (FIG. 8G), the insulating layer is dry-etched. The removal extends to the side surface portion of the convex portion, and as a result, it can be exposed to the side surface of the convex portion ((FIG. 9 (h)). Can be done by output.
Next, the mask layer 9 formed on the insulating layer 8 in the recess 3 is removed by chemical immersion or the like. Thus, an example of the electroconductive base material for plating which concerns on this invention can be produced (FIG. 9 (i)).
Further, when an intermediate layer is provided between the insulating layer made of DLC and the conductive base material, when the intermediate layer is made of an organic material, for example, following the removal of the insulating layer made of DLC with the oxygen plasma described above. The intermediate layer can be removed, and a conductive substrate for plating having a structure similar to that shown in FIG. When the intermediate layer is not a material mainly composed of carbon, it is difficult to etch the intermediate layer by oxygen plasma. In this case, the gas is changed according to the material of the insulating layer and the intermediate layer, or If the thickness of the intermediate layer is about 0.5 μm or less, the intermediate layer formed at the tip of the convex portion is removed without increasing the exposed width of the tip of the convex portion by mechanical polishing with a weak force. Is possible.
When the intermediate layer is not etched by oxygen plasma when the DLC thin film is dry etched, the intermediate layer can be dry etched by changing the gas or removed by mechanical polishing. Since the intermediate layer is a thin film, it can be removed by light polishing without thickening the line. In the case where the intermediate layer is conductive, it is not always necessary to remove the intermediate layer if the plating deposited by energization can be easily peeled off from the intermediate layer. As such, it can be part of a conductive substrate.

The mask layer in this invention can be divided roughly into an inorganic type and an organic type mask layer.
As the inorganic mask layer, metals such as aluminum (Al), chromium (Cr), nickel (Ni), cobalt (Co), gold (Au), and titanium (Ti) are particularly preferable because of their high resistance to oxygen plasma. Used. These films are formed by thin film forming methods such as sputtering, vacuum deposition, ion beam deposition, CVD, ion plating, electrodeposition, and electroless plating. Among these materials, aluminum (Al) is preferred because it is highly resistant to oxygen plasma, inexpensive, easy to deposit, and soluble in both acidic and basic substances. Used. Since aluminum is conductive, if it is left after dry etching, plating will be deposited on the entire surface of the conductive substrate, so it must be removed. Etching agents for aluminum include sodium hydroxide, potassium hydroxide, trisodium phosphate, disodium phosphate, tripotassium phosphate, dipotassium phosphate, etc. as basic substances, and sulfuric acid, persulfuric acid as acidic substances , Phosphoric acid, hydrochloric acid and their salts, etc., selected appropriately in consideration of the resistance of the insulating layer

Further, as an inorganic material having resistance to oxygen plasma, when a wet coating method is used, a metal oxide polymer composed of alkali metal, organopolymetal, organoalkoxy metal, alkoxy metal, modified acetylacetonate metal, etc., inorganic A paint containing a filler and a paint made of silicon compound frit called a ceramic coating can be applied by spraying, dispenser, dipping, roll, spin coating or the like with a solvent such as alcohol or water added. Alternatively, a metal fluoride complex can be used as a mask layer on the insulating layer by a liquid layer deposition method (LPD method) or the like. It is also possible to form various metal oxides by dry coating. As a coating method, it can be produced using a PVD method such as vapor deposition, sputtering, or ion plating, a CVD method such as plasma CVD or thermal CVD, or a method such as thermal spraying. Specifically, Al ₂ O ₃ , Cr ₂ O ₃ , Fe ₂ O ₃ , MgO, SiO, SiO ₂ , SnO ₂ , TaO ₅ , TiO ₂ , WO ₃ , Y ₂ O ₃ , ZnO, ZnO ₂ , ZrO A film such as ₂ is preferably used.

  In addition, the organic mask layer is resistant to dry etching, and a known one can be used. In particular, when oxygen plasma is used, a resist film containing silicon is generally resistant to oxygen plasma. Therefore, it is used favorably. The resist film containing silicon may or may not be photosensitive. As a method of removing the mask layer on the upper surface of the convex portion, when the mask layer on the upper surface of the convex portion is developed and removed and then the developed portion is dry-etched, the resist film has photosensitivity. However, when the mask layer on the upper surface of the convex portion is removed by mechanical polishing, the photosensitivity is not necessarily required. The resist film to be used may be negative or positive, and may be liquid or film. In the case of a liquid, it can be applied by spraying, dispenser, dipping, roll, spin coating or the like, and in the case of a film, it can be heated and laminated so that the resist is embedded in the recess.

  The resist film containing silicon described above will be described. As the silicon-containing photosensitive composition used for the resist film containing silicon, known ones can be used, but as a typical example of a suitable silicon-containing photosensitive composition, the main chain has silicon atoms, A chemically amplified silicon-containing photosensitive composition using a siloxane polymer containing an acid-decomposable group such as an acetal structure, a tertiary ester structure, or a t-butyloxycarbonyl structure, and a resist composition comprising a novolak resin and naphthoquinone diazide And a silicon-containing photosensitive composition for ultraviolet exposure in which an alkali-soluble ladder type polysiloxane having a silicon atom in the main chain and a silanol structure in the molecule is blended. Vinyl polymers and photoacids having a silicon atom in the side chain and an acid-decomposable group such as an acetal structure, tertiary ester structure, t-butyloxycarbonyl structure, or β-silylethyl ester structure in the side chain A chemically amplified silicon-containing photosensitive composition for far-ultraviolet light exposure comprising a generator, a structure formed by polymerization of a monomer containing a silicon derivative of methyl methacrylate, and silicon in the ester part of an acrylate polymer. And a resist composition having a polymer comprising an acrylic monomer having two trimethylsilyl groups, a silicon-containing monomer, maleic anhydride, and a polymer comprising t-butyl acrylate.

  The method of partially removing the mask layer includes (a) a method of developing and removing the mask layer formed on the upper surface of the convex portion by a photolithographic process using a photosensitive mask layer, and (b) a mask layer. For example, there is a method of mechanically polishing the removed portion. In the method (a), the photosensitive mask layer may be a positive type or a negative type, and the developer may be the same liquid as the mask layer peeling liquid described later. . Moreover, as a method of polishing and removing the mask layer (b), for example, there is a method of polishing while rotating the buffalo. As the buff, a commercially available non-woven fabric, ceramic buff, diamond buff or the like can be used.

  The dry etching used in the present invention is a method of introducing a gas into a vacuum vessel, exciting the gas with a high frequency, microwave, etc., generating plasma, generating radicals, ions, radicals generated by plasma, This is etching performed by reacting ions with an object to be etched (insulating layer, intermediate layer), converting the reaction product into a volatile gas, and exhausting the reaction product to the outside through a vacuum exhaust system. In dry etching, reactive ion etching and etching are performed in which high-frequency power is applied to the electrode on which the object is to be etched, and the ions generated from the plasma are accelerated by the negative self-bias voltage to impact the object to be etched. In general, plasma etching is used to etch an object to be etched by radicals generated from plasma without applying a bias. Reactive ion etching includes parallel plate type, magnetron type, dual frequency type, ECR type, helicon type, ICP type, etc., and the etching shape that is often obtained at a low pressure is isotropic. Plasma etching apparatuses include a barrel type, a parallel plate type, and a down flow type, and the pressure used is often high, and the etching shape obtained is isotropic. In the present invention, any of the above methods may be used.

In addition, as a gas composition in dry etching, a gas that can etch the formed insulating layer and is difficult to etch the conductive substrate is appropriately selected. As a typical gas composition, an F atom-containing plasma is generated. , F ₂ , CF ₄ -O ₂ , C ₂ F ₆ -O ₂ , C ₃ F ₈ -O ₂ , SF ₆ -O ₂ , SiF ₄ -O ₂ , NF ₃ , ClF ₃ , and unsaturated species Generate plasma, CF ₄ , C ₂ F ₆ , CHF ₃ , CF ₄ -H ₂ , CH ₄ , and further generate plasma containing Cl · Br atoms, Cl ₂ , CCl ₄ , CF ₃ Cl, Cl _2- CCl ₄ , Br ₂ , O ₂ , O ₂ —Ar, etc. that generate oxygen plasma are used. Since it does not have a global warming action and is not corrosive, a gas composition that generates oxygen plasma is preferable, and it is preferable to select a carbon-based material that can etch an insulating layer with oxygen plasma.

  The mask layer for dry etching of the insulating layer is preferably one having an etching rate in dry etching that is similar to or lower than that of the insulating layer. When the etching rate of the mask layer is higher than the etching rate of the insulating layer in the dry etching, the mask layer must be thickened when the insulating layer is thick, and the thickness varies. In some cases, the insulating layer under the mask layer may be etched. Therefore, it is particularly preferable that the etching rate of the mask layer is 1/2 or less of the etching rate of the insulating layer.

A conventionally known alkaline aqueous solution can be used as the stripping solution for the organic mask layer. For example, sodium silicate, potassium, trisodium phosphate, potassium, ammonium, dibasic sodium phosphate, potassium, ammonium, sodium carbonate, potassium, ammonium, sodium bicarbonate, potassium, Examples include inorganic alkali salts such as ammonium, sodium borate, potassium, ammonium, sodium hydroxide, ammonium, potassium, and lithium.
Monoethanolamine, diethanolamine, triethanolamine, 2- (2-aminoethoxy) ethanol, N, N-dimethylethanolamine, N, N-diethylethanolamine, N, N-dibutylethanolamine, N-methylethanol Alkanolamines such as amine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine; diethylenetriamine, triethylenetetramine, propylenediamine, N, N-diethyl Polyethylene, 1,4-butanediamine, N-ethyl-ethylenediamine, 1,2-propanediamine, 1,3-propanediamine, 1,6-hexanediamine, etc. Alkylene polyamines; aliphatic amines such as 2-ethyl-hexylamine, dioctylamine, tributylamine, tripropylamine, triallylamine, heptylamine and cyclohexylamine; aromatic amines such as benzylamine and diphenylamine; piperazine, N- Water-soluble amines such as cyclic amines such as methyl-piperazine, methyl-piper-methyl-piperazine, methyl-piperazine, and hydroxyethylpiperazine are also preferably used.

  A quaternary ammonium hydroxide is also preferably used as the mask layer stripping solution. Specifically, tetramethylammonium hydroxide [= TMAH], tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltripropylammonium hydroxide, methyltributylammonium hydroxide, trimethylethylammonium hydroxide (2-hydroxyethyl) trimethylammonium hydroxide [= choline], (2-hydroxyethyl) triethylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide, etc. Is exemplified. Of these, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide, methyltripropylammonium hydroxide, choline and the like are preferable. One or more quaternary ammonium hydroxides can be used.

  When an organic alkali agent or a quaternary ammonium hydroxide is used as a mask layer stripping solution, it is usually used in a mixture with a water-soluble organic solvent in order to improve the stripping property of the resist film. . Examples of the water-soluble organic solvent include sulfoxides such as dimethylsulfoxide; sulfones such as dimethylsulfone, diethylsulfone, bis (2-hydroxyethyl) sulfone, tetramethylenesulfone [= sulfolane]; N, N-dimethylformamide, N- Amides such as methylformamide, N, N-dimethylacetamide, N-methylacetamide, N, N-diethylacetamide; N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, Lactams such as N-hydroxymethyl-2-pyrrolidone and N-hydroxyethyl-2-pyrrolidone; 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3- Imidazolidinones such as diisopropyl-2-imidazolidinone; Tylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl And polyhydric alcohols such as ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, and derivatives thereof. Among them, dimethyl sulfoxide, dimethyl imidazolidinone, N-methyl-2-pyrrolidone, diethylene glycol monobutyl ether, sulfolane, N, N-dimethylacetamide, N, N-dimethylformamide and the like are preferably used. One or two or more water-soluble organic solvents can be used.

In FIG. 7C, the conductive base material 1 is etched in the case where the width of the upper surface 4 of the convex portion 3 is the same as the width of the resist pattern, but as shown in FIG. In addition, overetching may be performed so that the width of the upper surface 4 of the protrusion 3 is smaller than the width of the resist pattern. In this case, sufficient over-etching is performed to continuously form an insulating layer, as shown in FIG. 10B, and then the resist pattern is peeled to have an insulating layer as shown in FIG. 10C. A conductive substrate may be produced. In the above, the resist pattern forming method, etching method, insulating layer forming method, residual resist peeling method and the like are the same as described above.
Thereafter, except for the fact that there is no insulating layer on the upper surface of the convex portion, a conductive conductive substrate for plating as shown in FIG. 9 (i) can be produced in the same manner as in FIG. 8 (f) and thereafter. it can.

A known method can be adopted as the plating method for the conductive substrate for plating in the present invention. As the plating method, an electroplating method, an electroless plating method, or other plating methods can be applied.
The electroplating will be further described. For example, in the case of electrolytic copper plating, a copper sulfate bath, a copper borofluoride bath, a copper pyrophosphate bath, a copper cyanide bath, or the like can be used as an electrolytic bath for plating. At this time, it is known that the dispersion of electrodeposition stress can be further reduced by adding a stress relieving agent (also having an effect as a brightener) due to organic matter or the like to the plating bath. In the case of electro nickel plating, a Watt bath, a sulfamic acid bath, or the like can be used. In order to adjust the flexibility of the nickel foil in these baths, additives such as saccharin, paratoluenesulfonamide, sodium benzenesulfonate, sodium naphthalenetrisulfonate, and commercial additives that are their preparations, as needed An agent may be added. Furthermore, in the case of electrogold plating, alloy plating using potassium gold cyanide, pure gold plating using an ammonium citrate bath or a potassium citrate bath, or the like is used. In the case of alloy plating, a gold-copper, gold-silver, gold-cobalt binary alloy or a gold-copper-silver ternary alloy is used. Similarly, other known methods can be used for other metals. For example, Non-Patent Document 1, pages 87 to 504 can be referred to as the electroplating method.
Next, the electroless plating will be further described. Typical examples of the electroless plating method include copper plating, nickel plating, tin plating, gold plating, silver plating, cobalt plating, iron plating, chromium plating, and the like. In the process of electroless plating used industrially, a reducing agent is added to a plating solution, and electrons generated by the oxidation reaction are used for a metal precipitation reaction. , Reducing agent, pH adjusting agent, pH buffering material, stabilizer and the like. In the case of electroless copper plating, copper sulfate is preferably used as the metal salt, formalin as the reducing agent, and Rossel salt or ethylenediaminetetraacetic acid (EDTA) as the complexing agent. Moreover, although pH is mainly adjusted with sodium hydroxide, potassium hydroxide, lithium hydroxide, etc. can be used, carbonate and phosphate are used as a buffer, and monovalent as a stabilizer. Cyanide, thiourea, bipyridyl, O-phenanthroline, neocuproine, etc. that preferentially complex with copper are used. In the case of electroless nickel plating, nickel sulfate is preferably used as the metal salt, and sodium hypophosphite, hydrazine, a borohydride compound, or the like is preferably used as the reducing agent. When sodium hypophosphite is used, phosphorus is contained in the plating film, and the corrosion resistance and wear resistance are excellent. Moreover, as a buffering agent, a monocarboxylic acid or its alkali metal salt is often used. As the complexing agent, those that form a stable soluble complex with nickel ions in the plating solution are used, and acetic acid, lactic acid, tartaric acid, malic acid, citric acid, glycine, alanine, EDTA, etc. are used. In this case, sulfur compounds and lead ions are added. As for the electroless plating method, reference can be made to pages 505 to 545 of “Practical Plating for On-Site Engineers”, edited by Japan Plating Association (published by Sakai Shoten in 1986).
Furthermore, in order to obtain the reducing action of the reducing agent, it may be necessary to activate the catalyst on the metal surface. When the substrate is a metal such as iron, steel, nickel, etc., these metals have catalytic activity, so they are deposited just by immersing them in the electroless plating solution, but copper, silver or their alloys, and stainless steel In this case, in order to impart catalyst activation, a method is used in which the object to be plated is immersed in an acidic hydrochloric acid solution of palladium chloride and palladium is deposited on the surface by ion substitution.
The electroless plating that can be used in the present invention includes, for example, a palladium catalyst on the convex portion of the conductive substrate having the convex pattern having the upper surface and the concave portion of the geometrical drawing drawn by the pattern, if necessary. After making it adhere, there is a method of immersing in an electroless copper plating solution having a temperature of about 60 to 90 ° C. to perform copper plating.
In electroless plating, the substrate is not necessarily conductive. However, as described above, when the insulating layer is formed in the concave portion of the base material by electrodeposition, the base material needs to be conductive, and deposited on the base material as preparation for electroless plating. As a treatment for easily peeling the metal, when the portion to be electrolessly plated is subjected to anodization treatment, the substrate needs to be conductive.
In particular, when the material of the conductive substrate is Ni, for electroless plating, after anodizing the conductive substrate having the pattern of the convex portion having the upper surface and the concave portion of the geometric diagram shape drawn thereby, There is a method of depositing copper by dipping in an electroless copper plating solution.

As the metal that appears or precipitates by plating, conductive metals such as silver, copper, gold, aluminum, tungsten, nickel, iron, and chromium are used, but the volume resistivity (specific resistance) at 20 ° C. is used. It is desirable to include at least one kind of metal of 20 μΩ / cm or less. This is because when the structure obtained according to the present invention is used as an electromagnetic wave shielding sheet, the metal constituting the earth is grounded as an electric current, and the higher the conductivity, the better the electromagnetic wave shielding property. Such metals include silver (1.62 μΩ / cm), copper (1.72 μΩ / cm), gold (2.4 μΩ / cm), aluminum (2.75 μΩ / cm), tungsten (5.5 μΩ / cm). ), Nickel (7.24 [mu] [Omega] / cm), iron (9.0 [mu] [Omega] / cm), chromium (17 [mu] [Omega] / cm, all values at 20 [deg.] C.), but not limited thereto. If possible, the volume resistivity is more preferably 10 μΩ / cm, and further preferably 5 μΩ / cm. In consideration of the price of metal and the availability, it is most preferable to use copper. These metals may be used alone, or may be an alloy with another metal or a metal oxide for imparting functionality. However, it is preferable from the viewpoint of conductivity that a metal having a volume resistivity of 20 μΩ / cm is contained in the largest amount as a component.
The thickness (plating thickness) of the metal layer formed by plating on the exposed portion of the convex portion of the conductive substrate for plating described above exhibits sufficient conductivity (at this time, the electromagnetic wave shielding property is sufficiently developed). Therefore, the thickness is preferably 0.5 μm or more, and in order to reduce the possibility that pinholes are formed in the conductor layer (in this case, the electromagnetic wave shielding property is lowered), the thickness is 3 μm or more. More preferably. In addition, if the plating thickness is too large, the formed metal layer also spreads in the width direction, so the width of the transferred line becomes wider, the aperture ratio of the pattern base material with the conductor layer decreases, and transparency and invisibility Sexuality decreases. Therefore, in order to ensure transparency and invisibility, the thickness of the formed metal is preferably 20 μm or less, and in order to shorten the plating time and increase the production efficiency, the thickness of the plating is preferable. Is more preferably 10 μm or less.

An example of a method for producing a substrate with a conductive layer pattern using a conductive substrate for plating is provided with a convex portion 3 (see FIG. 2C) that forms a concave portion having a curved cross-sectional shape on the conductive substrate. An example of the formation will be described with reference to FIG.
First, FIG. 11A is a cross-sectional view showing an example of a conductive substrate for plating in the present invention. The tip portion including the insulating layer 8 and the side surface 3 'of the convex portion 3 in the concave portion 2 of the surface having the convex portion 3 of the conductive substrate 1 having the concave portion 2 of the geometrical drawing shape drawn by the pattern of the convex portion 3 4 'is formed to be exposed.
Next, plating is performed on the conductive base material 1 where the tip portion 4 ′ of the convex portion 3 (ie, the exposed portion of the convex portion 3) is exposed, and the metal 11 is deposited on the tip portion 4 ′ of the convex portion 3. Let FIG. 11B shows a cross-sectional view of this state.
Next, the adhesive film 12 (film in which the adhesive layer 14 is applied to another base material 13) is bonded to the surface of the conductive base material 1 on which the metal 11 is deposited. FIG. 11C shows a cross-sectional view of this state. When the pressure-sensitive adhesive layer 14 of the pressure-sensitive adhesive film 12 is bonded to the surface on which the metal 11 is deposited, the pressure-sensitive adhesive film 12 is heated if necessary according to the characteristics of the pressure-sensitive adhesive.
Then, by peeling off the adhesive film 12, the metal 11 is attached to the adhesive layer 14 and peeled off from the conductive base material 1, that is, transferred to another base material 13 to form a base material 15 with a conductor layer pattern. Get. A sectional view of this state is shown in FIG.

The conductor layer pattern (metal 11) of the substrate 15 with a conductor layer pattern obtained above is blackened to obtain a substrate with a conductor layer pattern having a conductor layer pattern that has been blackened. FIG. 12 schematically shows a cross-sectional view of the substrate with a conductor layer pattern. In FIG. 12, a conductor layer pattern (metal 11) whose surface has been blackened to become a black layer 16 is bonded to another base material 13 via an adhesive layer 14.
Further, in the state of FIG. 11B, the metal 11 (plating layer) deposited on the tip portion 4 ′ of the convex portion 3 of the conductive base material 1 is subjected to blackening treatment, and then the subsequent transfer process is performed. FIG. 13 schematically shows a cross-sectional view of the substrate with a conductor layer pattern obtained by performing the process. In FIG. 13, a conductor layer pattern made of metal 11 having a black layer 17 is bonded to another base material 13 with an adhesive layer 14. The black layer 17 is formed on the transfer surface side and side surfaces of the conductor layer pattern. Is formed.
When a substrate with a conductor layer pattern having the above-described blackened conductor layer pattern is used on the front surface of a display as an electromagnetic wave shielding member, generally, the surface on which the black layer is provided faces the viewer side of the display. It is used in this way.
It is also possible to perform both of the above two blackening processes so that the black layer can be seen from either side.
One of the blackening treatment methods described above is a method of forming a black layer on a metal pattern. For this purpose, various methods such as plating, oxidation treatment, and printing can be used on the metal layer.

  When the base material with a conductor layer pattern in the present invention is used as an electromagnetic wave shielding body, it can be used as it is by being attached to a display screen with or without another adhesive as appropriate. You may apply to a display after sticking to. Other substrates need to be transparent for use to block electromagnetic waves from the front of the display.

FIG. 14 shows a cross-sectional view of an electromagnetic wave shielding member obtained by attaching a base material with a conductor layer pattern to another base material. In FIG. 14, the conductor layer pattern which consists of the metal 18 is affixed on the adhesive layer 14 laminated | stacked on the base material (another base material) 13, and the other base material 19 is laminated | stacked on this, The metal 18 is embedded in the pressure-sensitive adhesive layer 14. This can be produced by pressing the conductor layer pattern side of the substrate with a conductor layer pattern to the other substrate 19 under heating or non-heating. In this case, while the pressure-sensitive adhesive layer 14 has sufficient fluidity or sufficient fluidity, the conductor layer pattern is embedded in the pressure-sensitive adhesive layer 14 by applying an appropriate pressure.
Further, by using a photosensitive material as a transfer material, it has adhesiveness at the time of transfer, and after transfer, the fluidity of the resin layer can be adjusted by an active energy ray such as UV. Thereby, it is possible to achieve both reliable transferability and stable reliability. As the base material (another base material) 13 and the base material (another base material) 19, an electromagnetic wave shielding member having high transparency can be obtained by using a material having transparency and excellent surface smoothness. Obtainable.
FIG. 15 is a cross-sectional view of an electromagnetic wave shielding member in which a base material with a conductor layer pattern is covered with a protective resin. A conductor layer pattern made of a metal 18 is affixed on an adhesive layer 14 laminated on a base material (another base material) 13, and these are covered with a transparent protective resin 20.

FIG. 16 is a cross-sectional view of another aspect of the electromagnetic shielding member. In this electromagnetic wave shielding body, the electromagnetic wave shielding member shown in FIG. 15 is a surface opposite to the surface on which the conductor layer pattern of the base material 13 is provided, and another base material 22 is bonded via an adhesive layer 21. .
FIG. 17 further shows a cross-sectional view of an electromagnetic wave shielding body according to another aspect. In FIG. 17, a conductor layer pattern made of a metal 18 is bonded to a base material (another base material) 13 via a pressure-sensitive adhesive layer 14, and is coated with an adhesive or pressure-sensitive adhesive 23 made of a transparent resin. Further, a protective film 24 is laminated thereon. Another substrate 22 such as a glass plate is attached to the other surface of the substrate 13 via an adhesive layer 21. In this electromagnetic wave shielding member, the surface on which the conductor layer pattern of the substrate with the conductor layer pattern having the conductor layer pattern adhered to the substrate (another substrate) 13 via the adhesive s 14 is transparent, Coating is performed with the resin 23, and a protective film 24 is further laminated. Then, an adhesive is applied to the other surface (the surface on which nothing is laminated) of the base material 13 of the obtained laminate. And can be produced by pressing and adhering to another substrate 22. As said transparent resin 23, resin hardened | cured with an active energy ray other than the said thermoplastic resin and a thermosetting resin can also be used. It is preferable to use a resin that cures with active energy rays because it cures instantaneously or in a short period of time, thereby increasing productivity.

The conductor layer in the base material with a conductor layer pattern of the present invention will be described in more detail with reference to the drawings and photographs.
FIG. 18 shows a partial cross-sectional view of an example of the base material with a conductor layer pattern of the present invention. In FIG. 18, the conductor layer 50 is bonded to the base material 52 via the adhesive layer 51. The adhesive 51 swells in the vicinity of the conductor layer 50, which is caused by the pressure of the adhesive layer on the conductor layer on the conductive substrate for plating during transfer. In many cases, such a climax is seen, but there is not always a climax. 18 and 19, the adhesive layer is interposed. However, when the substrate itself has adhesiveness, the adhesive layer may not be provided. Further, the conductor layer 50 is not necessarily partially embedded in the adhesive layer 51.
In FIG. 18, a point where the plane parallel to the reference plane contacts the lowermost end of the conductor layer is a ₀ , a point where the uppermost end of the conductor layer is contacted is a ₁ , and a point where the surface is in contact with the lowermost end of the recess is a ₂ , the distance perpendicular to these reference planes, that is, the maximum height t ₁ is the difference between a ₁ and a ₀ , and the minimum height t ₂ is the difference between a ₂ and a ₀ . t ₂ is required to be less than 30% to 99% of the _{t 1,} preferably 40 to 95%, even 50-90% are preferred.

であることが好ましく、ｄ_１２は０．８３９×ｈ_１２以上であることがより好ましい。
導体層の凹部は周辺の最高点からその内側の低い部分であり、その最大幅を導体層の凹部の幅というとき、それは導体層の幅の５０％以上であることが好ましい。
第１と第２の位置は、導体層の凹部の幅の１０％を一つの基準とすることができる。 The width of the conductor layer (d _{m in} FIGS. 18 and 19) can be arbitrarily selected within the range of 5 to 30 μm, more preferably 7 to 20 μm, and most preferably 8 to 15 μm.
t ₂ is preferably 1 to 20 [mu] m, more preferably 1 to 10 [mu] m.
The width of the concave portion of the conductor layer only needs to be larger at the upper portion than at the lower portion as a whole as the inclination of the side surface does not narrow as it advances in the tip direction. Particularly in the vicinity of the tip of the recess, the first and second positions of the recess are selected as appropriate. The height h ₁₂ between the selected first and second positions and the width d ₁₂ between them are preferably such that d ₁₂ / h ₁₂ corresponds to an angle of 30 ° to 80 °, and is 50 ° or more. It is more preferable. Figure 20 is a partial cross-sectional view showing a first and second position and height _{h 12} and width _{d 12.}
D ₁₂ is

D ₁₂ is more preferably 0.839 × h ₁₂ or more.
The concave portion of the conductor layer is a lower portion inside from the highest point of the periphery, and when the maximum width is referred to as the width of the concave portion of the conductor layer, it is preferably 50% or more of the width of the conductor layer.
The first and second positions can be based on 10% of the width of the concave portion of the conductor layer.

  In addition, as described above, a rotating body (roll) can be used as the conductive base material used in the present invention, and further details thereof will be described. The rotating body (roll) is preferably made of metal. Furthermore, it is preferable to use a drum electrode or the like used in the drum-type electrolytic deposition method as the rotating body. As described above, the material that forms the surface of the drum electrode may be a material with relatively low plating adhesion, such as stainless steel, chrome-plated cast iron, chrome-plated steel, titanium, or titanium-lined material. preferable. By using a rotating body as the conductive base material, it is possible to obtain a base material with a conductor layer pattern as a roll, and in this case, productivity is greatly increased.

  A process of obtaining a structure as a scroll while continuously peeling a pattern formed by electroplating using a rotating body will be described with reference to FIG. FIG. 21 shows the concept of an apparatus for continuously depositing metal by electroplating and continuously peeling the deposited metal when the drum electrode is used as the conductive substrate while rotating the drum electrode. It is sectional drawing (partial front view) shown.

  That is, the electrolytic solution 101 in the electrolytic bath 100 is supplied to the space between the anode 102 and the rotating body 103 such as a drum electrode by the pipe 104 and the pump 105. When a voltage is applied between the anode 102 and the rotator 103 and the rotator 103 is rotated at a constant speed, a metal is electrolytically deposited on the surface of the rotator 103, and a convex portion on the surface of the rotator 103 outside the electrolytic solution 101. The adhesive layer of the film 107 on which the adhesive layer is formed is pressure-bonded to the metal 106 deposited on the exposed portion of the film by the pressure roller 108, and the metal 106 is continuously peeled off from the rotating body 103 while the adhesive layer is formed on the film 107. The metal 106 is transferred to form a base material 109 with a conductor layer pattern. This can be wound up on a roll (not shown). Thus, the base material 108 with a conductor layer pattern can be manufactured. In addition, the convex part and the recessed part of the geometrical drawing shape drawn by it are formed in the surface of said rotary body 103. As shown in FIG. Further, after the metal 106 deposited on the upper surface of the convex portion is peeled off from the rotating rotor 103 that is rotating, the surface of the rotating body 103 is etched and washed (not shown) before being immersed in the electrolytic solution 101. May be. Although not shown, a draining roll may be installed at the upper end of the anode 102 in order to prevent the electrolyte circulating at high speed from being ejected upward. The electrolyte stopped by the draining roll is the anode 102. Return to the bottom electrolyte bath from outside and circulated by the pump. Further, although not shown, it is preferable to add a mode in which a copper ion source and additives consumed during the circulation are added as necessary.

Furthermore, as described above, a hoop-like conductive base material can be used as the conductive base material used in the present invention.
The hoop-like conductive base material can be produced by forming convex portions on the surface of the belt-like conductive base material and then joining the end portions. As described above, the material forming the surface of the conductive substrate is made of a material with relatively low plating adhesion, such as stainless steel, chrome-plated cast iron, chrome-plated steel, titanium, or titanium-lined material. It is preferable. When a hoop-like conductive base material is used, the process of blackening treatment, rust prevention treatment, transfer, etc. can be processed in one continuous process, so the productivity of the base material with a conductive pattern is high. Moreover, the base material with an electroconductive pattern can be produced continuously, and it can be set as a product as a scroll. The thickness of the hoop-like conductive substrate may be determined as appropriate, but is preferably 100 to 1000 μm.
On the other hand, unnecessary plating deposits attached to the plate (especially copper) are applied to the plate that has been used a certain number of times by applying an electric field opposite to that during plating, or by immersing it in a metal etching solution such as ammonium persulfate. In this case, what is called “copper pretend”) can be removed. As a result, it is possible to greatly extend the life of the plate and reduce the trouble of replacing the plate.

  A process of obtaining a structure as a scroll while continuously peeling a conductor layer pattern formed by electroplating using a hoop-like conductive substrate will be described with reference to FIG. FIG. 22 is a conceptual diagram of an apparatus that peels while continuously depositing a conductor layer pattern by electroplating when a hoop-like conductive substrate is used as the conductive substrate.

  The hoop-shaped conductive substrate 110 is pre-treated tank 129, plating tank 130, washing tank 131, blackening tank 132, washing tank 133, rust prevention tank 134, washing tank 135 using transport rolls 111 to 128. Set up to move around in order. In the pretreatment tank 129, pretreatment such as degreasing or acid treatment of the conductive substrate 110 is performed. Thereafter, a metal is deposited on the conductive substrate 110 in the plating tank 130. Thereafter, the water washing tank 131, the blackening treatment tank 132, the water washing tank 133, the rust prevention treatment tank 134, and the water washing tank 135 are sequentially passed through, and the surface of the metal deposited on the conductive substrate 110 is blackened. Further rust prevention treatment. Although only one tank is shown in the figure after each treatment process, a plurality of tanks may be used as needed, or other pretreatment tanks may be provided before each treatment process. Next, the plastic film substrate 136 on which the adhesive layer is laminated is transferred between the conductive substrate 110 and the pressure roll 137 on the transport roll 128 so that the metal deposited on the upper surface of the convex portion of the conductive substrate 110 is transferred. Then, the metal can be transferred to the plastic film substrate 136 to continuously manufacture the substrate 138 with a conductive layer pattern. The obtained base material 138 with a conductive layer pattern can be wound into a roll. If necessary, the pressure-bonding roll 137 can be heated. Although not shown, the plastic film substrate 136 may be preheated through a preheating tank before passing through the pressure-bonding roll. In addition, release PET or the like may be inserted as needed for winding the transferred film. Furthermore, after the metal is transferred, the hoop-like conductive base material repeats the above steps. Thus, the base material with a conductor layer pattern can be manufactured continuously with high productivity.

  When the substrate with a conductor layer pattern obtained as described above is used as an electromagnetic wave shielding member, an antireflection layer, a near infrared shielding layer, or the like may be further laminated. The base material itself that transfers the metal deposited on the conductive base material may also serve as a functional layer such as an antireflection layer or a near infrared shielding layer. Furthermore, the cover film (for example, the protective film 20 in FIG. 15 or FIG. 16) used when forming a protective layer on the conductor layer pattern may also serve as a functional layer such as an antireflection layer or a near infrared shielding layer. .

  Further, the present invention is not limited to the plating method as described above, and can be manufactured by a single wafer. When performed in a single wafer, it is easy to handle when preparing a conductive substrate for plating, and even when the same insulating layer is peeled off after repeated use of the same conductive substrate for plating, it is drum-shaped. In the case of a hoop-shaped substrate, it is difficult to extract or replace only a specific portion. However, if it is a sheet, it is possible to extract or replace only the conductive substrate for plating in which a defect has occurred. In this way, by making a single wafer, it is easy to handle when a problem occurs in the conductive substrate for plating. The thickness of the sheet-like conductive base material may be determined as appropriate, but the thickness is preferably 20 μm or more in consideration of giving sufficient strength not depending on the stirring of the liquid in the plating tank. If it is too thick, the weight increases and it is difficult to handle, so a thickness of 10 cm or less is preferable.

  When plating on a conductive substrate, the plating grows isotropically, so the plating deposited on the exposed portion of the conductive substrate is deposited so as to cover the insulating layer formed on the side surface of the convex portion. For this reason, stress is applied to the insulating layer every time it is peeled and transferred. In particular, as the line width becomes finer, the lines of electric force concentrate at the ends, so that the covering of the deposited plating on the insulating layer becomes more prominent. In this case, most of the destruction of the insulating layer during repeated use is due to the stress at the time of peeling of the plating deposited so as to cover the insulating layer, rather than due to the contact of the adhesive, When the insulating layer is formed up to the uppermost part, the stress applied to the insulating layer increases, and it was confirmed that the insulating layer was destroyed starting from that portion. However, if the tip portion of the convex portion is exposed as in the present invention, the insulating layer is less likely to be broken, and as a result, the lifetime of the conductive support for plating according to the present invention can be extended.

The conductive substrate for plating having the convex pattern described in detail above and the concave portion of the geometric drawing drawn by the convex pattern and having the insulating layer in the concave portion has the convex pattern and the geometric drawn thereby. The concave portion having the figure-shaped insulating layer is formed with an appropriate width. If the region is defined as region A, the conductive support for plating according to the present invention can be provided with a region (referred to as region B) corresponding to the ground portion of the electromagnetic wave shielding member. At this time, the region A and the region B may have the same pattern. Moreover, it is preferable to make the area ratio of the recessed part in the area | region A the same or larger than the area ratio of the recessed part in the area | region B, and it is still more preferable to enlarge 10% or more. The area ratio of the recesses refers to the ratio of the area of the portion excluding the exposed portion of the convex portion of each region to the total area of each region when viewed in a plan view. In addition, in this case, a solid metal film is formed on the periphery of the conductive support for plating by plating. Since the solid metal film is easily broken during transfer, the area ratio of the recesses in the region B is preferably 40% or more, and preferably less than 97%.
In the region B, the geometric diagram shape drawn by the pattern of the convex portions can be the one described above.
(1) Mesh-like geometric pattern (2) Rectangular geometric pattern regularly arranged at predetermined intervals (3) Parallelogram pattern regularly arranged at predetermined intervals (4) Circular pattern or ellipse Pattern (5) Triangular pattern (6) Polygonal pattern of pentagon or more (7) Star pattern etc.
Further, the formation of the convex portions in the region B, the formation of the insulating layer, and the like can be performed in the same manner as in the region A described above. Further, the height of the exposed portion of the convex portion, the width does not increase as the exposed portion proceeds in the tip direction, and the width is made smaller at the upper portion than at the lower portion as a whole, and the relationship d ₁₀ / h ₁₀ Etc. are the same as those in the region A.

(Preparation of a plate for forming a conductor layer with a geometrical figure)
A resist film (Photec H-Y920, 20 μm thickness, manufactured by Hitachi Chemical Co., Ltd.) was bonded to both sides of a 10 cm square stainless steel plate (SUS316, finishing 3 / 4H, thickness 100 μm, manufactured by Nisshin Steel Co., Ltd.). . The bonding conditions were a roll temperature of 105 ° C., a pressure of 0.5 MPa, and a line speed of 1 m / min. Next, the line width of the light transmission part is 40 μm, the line pitch is 300 μm, and the bias angle is 45 ° (in the regular square, the line is arranged at an angle of 45 degrees with respect to the side of the regular square). Then, the negative film formed in a lattice shape was allowed to stand on the surface on which the stainless steel resist film was bonded. Using an ultraviolet irradiation device, ultraviolet rays were irradiated at 120 mJ / cm ² from above and below the stainless plate on which the negative film was placed under a vacuum of 600 mmHg or less. further. By developing with a 1% aqueous sodium carbonate solution, a resist mask having a line width of 40 μm, a line pitch of 300 μm, and a bias angle of 45 ° was formed on the SUS plate. In addition, since the entire surface opposite to the surface on which the pattern is formed is exposed, it is not developed and a resist film is formed on the entire surface.
Next, the SUS plate was etched using an aqueous ferric chloride solution (45 ° Be ′, manufactured by Tsurumi Soda Co., Ltd.) heated to 40 ° C. Etching is performed until the line width of the SUS plate reaches about 7 μm, and the resist mask remains on the conductive substrate having the convex pattern having the upper surface and the concave portion having the geometrical shape drawn by the pattern. A conductive substrate was prepared. The width of the upper surface of the convex portion was 5 to 8 μm, the interval (pitch) between the upper surfaces of the convex portions was 300 ± 2 μm, and the height of the convex portion was 35 to 38 μm. The width of the upper surface of the convex portion was measured by observing at a magnification of 1000 times using a microscope (Digital Microscope VHX-500, manufactured by Keyence Corporation). Since the upper surface of the convex portion was not roughened with the etching solution, it was glossy by microscopic observation. This glossy portion was used as the upper surface of the convex portion. The measurement at this time was performed at five random points, and the maximum value and the minimum value were adopted. The measurement of the space | interval (pitch) of a convex-part upper surface was observed and measured by 200-times multiplication factor using the microscope (Digital microscope VHX-500, Keyence Corporation make). Measurements were made at 5 random points. Further, the height of the convex portion was measured by cutting a part of the conductive base material and casting it with resin, and observing the cross section with SEM at a magnification of 1000 to 3000 times. Since the measurement points were 5 points and both sides of the convex portion were measured, the maximum value and the minimum value of 10 points in total were adopted. These measurement methods are the same in the following.
Note that the opposite surface of the surface on which the convex pattern was formed was not etched because a resist film was formed on the entire surface. Next, when the conductive substrate for plating was immersed in a 5% aqueous sodium hydroxide solution at a liquid temperature of 30 ° C., the surface on which the convex pattern was formed and the resist film formed on the opposite surface were removed.

(Method of forming insulating film)
A DLC film is formed by an RF plasma CVD apparatus (NANOCOAT 400, Nanotech Co., Ltd.). The RF plasma CVD apparatus comprises an upper electrode, a vacuum chamber having a lower electrode on which a substrate is placed, and a gas inlet, an RF power source 25 for generating plasma, a switch / matching box, a matching box, a vacuum pump, and the like. The vacuum chamber is depressurized to a vacuum degree of 10 ⁻³ torr by a vacuum pump. First, Ar gas plasma was excited to clean the substrate, hexamethyldisilazane was introduced at a flow rate of 4 sccm, and Si was formed as an intermediate layer with an RF output of 500 W to a film thickness of 0.3 μm. . Next, acetylene gas was introduced at a flow rate of 15 sccm, and a DLC layer was formed on the intermediate layer so that the film thickness was 2.5 to 3.5 μm at an RF output of 500 W. The thickness of the insulating layer was measured by cutting a part of the conductive base material and casting it with a resin, and observing the cross section with an SEM at a magnification of 3000 times. Since the measurement points were 5 points and both sides of the convex portion were measured, the maximum value and the minimum value of 10 points in total were adopted.

(Dry etching of insulating layer)
Further, in a plate having an insulating layer formed on the entire surface, a silicon resist DLR-501 (manufactured by NTT Advantes Technology Co., Ltd.) was applied to the surface on which the pattern was formed by spin coating. The spin coater was rotated at 500 rpm for 10 seconds and then at 1000 rpm for 30 seconds. Subsequently, it was heated and dried for 90 seconds on a hot plate heated to 90 ° C. The thickness of the silicon-based resist in the TOP portion of the insulating layer was 1 μm. Further, the entire surface was lightly polished with # 4000 polishing paper, and the silicon resist layer on the insulating layer on the upper surface of the convex portion was removed.
Next, using a reactive ion etching apparatus (CSE-1110 (manufactured by ULVAC, Inc.)), the insulating layer on the upper surface of the convex portion was dry-etched using oxygen plasma. The gas composition was a mixed gas of oxygen 16 sccm and argon 2 sccm, and the gas pressure was 4 Pa. Further, dry etching was performed at an RF output of 300 W for 40 minutes. Next, the conductive substrate for plating is immersed in a solution of dipropylene glycol monomethyl ether: monoisopropanolamine = 75: 25 heated to 50 ° C. for 3 minutes, and the silicon resist formed on the insulating film is peeled off. did.
As a result, the stainless steel at the tip of the convex portion was exposed, the exposed width was 6.2 to 11.1 μm, and the insulation height was 35 μm on average. The insulating layer was removed from the upper end of the convex part to 2.0 to 4.0 μm in the height direction. That is, the height of the exposed portion of the convex portion was 2.0 to 4.0 μm. Further, the width of the upper surface of the convex portion of the conductive substrate for plating after etching was not changed.
As described above, a transfer plating plate having a protective adhesive film attached thereto was obtained (corresponding to FIG. 9 (i)).
Electron micrograph of the cross section showing that the exposed portion of the convex portion of the conductive substrate for plating does not increase in width as it advances in the tip direction, and as a whole the width is smaller than the lower portion of the convex portion. I confirmed. Further, the difference in the width direction between the first position and the second position with respect to the height difference between the end (first position) of the insulating layer on the side surface of the convex portion and the position higher than that (second position). the relationship between (decline), the relationship between the width _{d 10} to the height _{h 10} of the method shown in Figure _6, is, _i.e., d 10 _{/ h 10} is from 0.424 to 0.488 (64 ° to 67 ° Equivalent).
The width of the exposed portion at the tip of the convex portion, the height h ₁₀ and the width d _{10 at} the first position and the second position are obtained by cutting a part of the conductive base material and casting it with resin, and the magnification is 10,000 times. The cross section was actually measured by SEM observation, and the number of measurement points was 5, and both sides of the convex portion were measured. Therefore, the maximum and minimum values of a total of 10 points were adopted. The insulation height was measured in the same manner, but the magnification was 3000 times and the average value was obtained.

(Copper plating)
It was wound around a stainless steel roll having a diameter of 100 mm and a width of 200 mm so that the back surface of the conductive substrate for plating produced above and the roll were in contact with each other, and a joint was bonded with an insulating tape. Furthermore, the roll and the conductive base material were bonded together so as to cover the entire circumference of the conductive base material 5 mm with the insulating tape so that the plating solution did not penetrate from the side portion, thereby forming one rotating body.
Next, electrolytic copper plating was performed on the rotating body with an apparatus configuration as shown in FIG. A titanium insoluble electrode coated with platinum was used as the anode. The stainless steel roll was used as the drum electrode for the cathode. The electrolytic bath for electrolytic copper plating contains an aqueous solution of copper sulfate (pentahydrate) 70 g / L, sulfuric acid 180 g / L, caparside HL (manufactured by Atotech Japan Co., Ltd., 20 ml / L) in an aqueous solution at 25 ° C. It is accommodated and sent between the anode and the rotating body by a pump through piping. About half of the rotating body is immersed in this electrolytic solution. A voltage was applied to both electrodes so that the current density was 7 A / dm ^2, and plating was performed until the thickness of the metal deposited on the upper surface of the convex portion in the region A of the conductive base material was approximately 2 μm. At this time. The stainless steel roll was rotated at a speed of 1 m / min.

(Transcription)
The pressure-sensitive adhesive film was once wound up in a roll shape to obtain a roll-shaped pressure-sensitive adhesive film (manufactured by Hitachi Chemical Co., Ltd., trade name: SGA-5, resin thickness: 5 μm). The pressure-sensitive adhesive film is unwound from the roll-shaped pressure-sensitive adhesive film, and the surface of the pressure-sensitive adhesive layer is continuously bonded to the metal (copper) deposited on the upper surface of the convex portion of the rotating body (stainless steel roll) with a pressure roll and peeled off. By doing this, the metal was transferred to the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film to continuously produce a substrate with a conductor layer pattern. The base material with a conductor layer pattern was wound into a roll. Moreover, blocking at the time of winding was prevented by laminating release PET (S-32, manufactured by Teijin DuPont Co., Ltd.) while laminating on the surface of the adhesive film on which the conductor layer pattern was transferred. The conductor layer pattern had a line width of 10 to 15 μm, a line pitch of 300 ± 2 μm, and an average conductor thickness of 2.0 μm. The conductor layer recess extends toward the tip, and d ₁₂ / h _{12 at} the tip (the first position is the tip of the recess, and the second position is the highest height t ₁ and the lowest height from the first position. The position was 10% lower than the difference in thickness t ₂ ), which was 0.424 to 0.488 (corresponding to 64 ° to 67 °), similar to d ₁₀ / h ₁₀ .
Even after winding the adhesive film to which the copper plating had been transferred 50 m, there was no change in the copper plating on the stainless steel roll and its transferability, and no peeling of the insulating film was observed.
The line width and conductor thickness were measured by partially cutting the obtained base material with a conductor layer pattern and casting it with a resin, and observing the cross section with a magnification of 3000 times by SEM. Since 5 measurement points were measured on both sides of the convex portion, the maximum value and the minimum value or the “average value” of 10 points in total were adopted. The line pitch was measured with a microscope (digital microscope VHX-500, manufactured by Keyence Corporation) at a magnification of 200 times, and the measurement was performed at five random points.

(Formation of protective layer)
A part of the obtained base material with a conductor layer pattern is cut out, and a UV curable resin (Aronix UV-3701, manufactured by Toagosei Co., Ltd.) is applied to the surface on which the conductor layer pattern is formed (Yoshimitsu Seiki Co., Ltd.). After coating with PET film (Mylar D, Teijin DuPont Films Co., Ltd., 75 μm) gently using a hand roll so that bubbles do not enter, A protective film was formed by irradiating with 1 J / cm ² of ultraviolet rays.

(Repeated use)
Using the conductive substrate for plating transfer obtained above, the copper plating-transfer process was repeated 5000 times in the same manner as described above (the rotating body was rotated 5000 times), resulting in a change in copper plating transferability. There was no separation of the insulating film.

The conductive layer formed on the transparent substrate had a shape as shown in FIG.
The maximum height of both end portions of the conductive layer cross-sectional structure formed on the transparent substrate was 7 μm and the minimum height was 4 μm when the substrate surface was taken as a reference surface. The ratio between the maximum height and the minimum height was 57%. The obtained geometrical figure-shaped conductor layer could be formed on the plate without any defects and could be easily transferred to the substrate with resin. Moreover, the obtained base material with a conductor layer pattern did not have a glare feeling and had good adhesion reliability with the cover film. In addition, five points were arbitrarily taken as measurement points, and the above values were obtained by taking an average value for each of the maximum height and the minimum height (the same applies to the following).
The width of the concave portion of the conductor layer was 82% of the width of the conductor layer (an arbitrary value was obtained at five locations. The same applies hereinafter).
Further, d ₁₂ / h ₁₂ was 0.424 to 0.488 (corresponding to 64 ° to 67 °) (however, the first position is the highest point in the periphery, and the first and second positions) The difference in the width direction was 10% of the width of the recess, and so on.

  Instead of the stainless steel plate used in Example 1, a titanium plate of the same size was used, and a plate was prepared using hydrofluoric acid instead of ferric chloride as an etching solution.

  After copper plating was formed on the plate in Example 1 and transferred to the adhesive film, a reverse electric field was applied to the plate to remove a small amount of copper remaining on the plate.

  After copper plating was formed on the plate in Example 1 and transferred to an adhesive film, it was immersed in an aqueous ammonium persulfate solution to remove a small amount of copper remaining on the plate.

The transfer film of Example 1 was transferred using a photosensitive film (manufactured by Hitachi Chemical Co., Ltd., trade name RY-3315F) instead of the adhesive film. Immediately after the transfer, UV was irradiated at 500 mJ / cm ² to cure the resin.

Instead of copper sulfate / sulfuric acid, the composition of the copper plating solution used in Example 1 was copper pyrophosphate (100 g / L), potassium pyrophosphate (200 g / L), and ammonia (350 ppm) at 10 A / dm ² , 30 ° C. Plating was performed under conditions of 3 minutes, followed by plating at 20 A / dm ² , 30 ° C. for 5 seconds. The deposited plating was black.

A substrate with a conductor layer pattern was prepared in the same manner as in Example 1. However, the exposed width of the convex portion of the conductive substrate for plating is 5.9 to 10.0 μm, the insulation height is 32 to 36.5 μm, and the height of the exposed portion of the convex portion is 1.5 to 2. It was 5 μm. Moreover, the thickness of the insulating layer was 3.5 to 4.5 μm. Relationship in a width _{d 10} to the height _{h 10} of the method shown in Figure _6, is, _i.e., d 10 _{/ h 10} was a .306-.404 (corresponding to 68 to 73 °).
Moreover, copper plating was performed as follows.
(Copper plating)
After immersing the conductive substrate for plating prepared above in the following copper pyrophosphate electrolyte, plating is performed at a current density of 15 A / dm ² for 55 seconds, and the exposed portion of the convex portion of the conductive substrate for plating is exposed. Copper was precipitated. Next, plating was performed for 5 seconds at a current density of 30 A / dm ² , and the surface of the copper that had been deposited was blackened. As a result, the thickness was 3 to 5 μm on the upper surface of the metal convex portion deposited on the exposed portion of the convex portion. The conductive base material having the copper plating (conductor pattern) whose surface was blackened on the exposed portion of the convex portion was subsequently washed with water and dried.
(Electrolyte composition, etc.)
Copper pyrophosphate 100g / L
Potassium pyrophosphate 200g / L
Ammonia water (30%) 5mL / L
pH 8-9
Current density 20A / dm ²
Bath temperature 30 ° C
Anode Copper plate Rotation speed 0.55m / min

The conductive layer formed on the transparent substrate had a shape as shown in FIG.
The conductor layer pattern of the substrate with a conductor layer pattern had a line width of 11 to 15 μm and a line pitch of 300 ± 2 μm.
The maximum height of both end portions of the cross-sectional structure of the conductive layer formed on the transparent substrate was 7 μm and the minimum height was 5 μm when the substrate surface was used as a reference surface. The ratio between the maximum height and the minimum height was 71%. The obtained geometrical figure-shaped conductor layer could be formed on the plate without any defects and could be easily transferred to the substrate with resin. Moreover, the obtained base material with a conductor layer pattern did not have a glare feeling and had good adhesion reliability with the cover film.
d ₁₂ / h ₁₂ was 0.306 to 0.404 (corresponding to 68 to 73 °).
The width of the concave portion of the conductor layer was 80% of the width of the conductor layer.

A substrate with a conductor layer pattern was prepared in the same manner as in Example 1. However, the exposed width of the convex portion of the conductive substrate for plating is 29.9 to 35.0 μm, the insulation height is 8.5 to 14.1 μm, and the height of the exposed portion of the convex portion is 0. It was set to 5-1.5 micrometers. Further, the width 29-32 μm of the upper surface of the convex portion of the conductive substrate for plating after etching was not changed. Relationship in a width _{d 10} to the height _{h 10} of the method shown in Figure _6, is, _i.e., d 10 _{/ h 10} is a 0.870 to 1.000 (corresponding to 45 to 49 °), for plating a conductive base The exposed height of the convex part of the material was set to 0.5 to 1.5 μm.
The conductive layer formed on the transparent substrate had a shape as shown in FIG.
The pattern of the conductor layer had a line width of 34 to 38 μm, a line pitch of 225 ± 2 μm, and a conductor thickness of 2.5 to 3.5 μm.
The maximum height of both end portions of the conductive layer cross-sectional structure formed on the transparent base material was 10 μm and the minimum height was 9 μm when the base material surface was used as a reference surface. The ratio between the maximum height and the minimum height was 90%. The obtained geometrical figure-shaped conductor layer could be formed on the plate without any defects and could be easily transferred to the substrate with resin. Moreover, the obtained base material with a conductor layer pattern did not have a glare feeling and had good adhesion reliability with the cover film.
D ₁₂ / h ₁₂ was 0.870 to 1.000 (corresponding to 45 to 49 °).
The width of the concave portion of the conductor layer was 64% of the width of the conductor layer.

Comparative Example 1
The production of the conductive base material having the pattern of the convex part of the plate and the concave part of the geometric diagram drawn thereby, and the formation of the insulating film were carried out in the same manner as in Example 1.
As a method for polishing the insulating layer, the upper surface of the convex portion was polished using a polishing powder (Type 0.1R, manufactured by Baikowski Chimie SA) and a polishing cloth (Microcloth, manufactured by Buehler GMBH) to expose the SUS surface. The thickness of the insulating layer in the concave portion of the conductive substrate for plating was 2.0 to 3.0 μm. However, the thickness of the insulating layer at the end of the upper surface of the convex portion was 3.0 μm. The line width after polishing, that is, the width of the upper surface of the convex portion was 10 to 15 μm. In this conductive base material for plating, the convex portion was exposed only on the upper surface, and the exposed height was zero.
Using this plate as a cathode, plating was performed in the same manner as in Example 1 and transferred to an adhesive film. The line width (the width of the upper surface of the convex portion) of the obtained geometric diagram-shaped conductor layer was 11 to 30 μm, the line pitch was 300 ± 2 μm, and the conductor thickness was 4 to 6 μm.
The cross-sectional structure of the conductive layer formed on the transparent substrate was almost rectangular, and the maximum height and the minimum height were almost equal, about 10 μm. The ratio between the maximum height and the minimum height was 100%. The obtained geometric figure-shaped conductor layer was more glaring than that of Example 1.

Comparative Example 2
Production of a conductive substrate having a pattern of convex portions of a plate and a concave portion having a geometric diagram shape drawn thereby, formation of an insulating film, plating, and transfer were performed in the same manner as in Example 1.
The insulating layer was polished in the same manner as in Example 1. As for the convex part of this electroconductive base material for plating, the upper surface was exposed 5 micrometers or more. The cross-sectional structure of the conductive layer formed on the transparent substrate was almost rectangular, with a maximum height of 15 μm and a minimum height of 4 to 5 μm. The ratio of the highest height to the lowest height was about 30%. Compared with Example 1, the obtained geometrical figure-shaped conductor layer had many plating defects and peeling defects from the plate.

The perspective view which shows an example of the electroconductive base material in which the geometric figure of the recessed part with respect to a convex part is formed. A part of AA sectional drawing of FIG. FIG. 3 is a part of a cross-sectional view taken along the line AA in FIG. Sectional drawing of the electroconductive base material of the state which formed the insulating layer on the surface in the electroconductive base material which has the pattern of a convex part and the geometrical drawing shape recessed part drawn by it. Sectional drawing which shows the other example of the electroconductive base material of the state which formed the insulating layer in the surface in the electroconductive base material which has the recessed part of the pattern of a convex part and the geometric drawing shape drawn by it. Sectional drawing which shows an example of the structure of the pattern of the convex part of the electroconductive base material in this invention, and the insulating layer of a convex part side surface. Sectional drawing which shows an example of the production method of the electroconductive base material which has the pattern of a convex part and the recessed part of the geometric diagram shape drawn by it. Sectional drawing which shows an example of the process (first half) of forming an insulating layer in the electroconductive base material which has the recessed part of the pattern of a convex part, and the geometric drawing shape drawn by it. Sectional drawing which shows an example of the process (latter half) of forming an insulating layer in the electroconductive base material which has the pattern of a convex part and the concave part of the geometric diagram shape drawn by it. Sectional drawing which shows the other example of the process of forming an insulating layer in the conductive base material which has the pattern of a convex part, and the recessed part of the geometrical drawing shape drawn by it. Sectional drawing which shows an example of the preparation methods of the base material with a conductor layer pattern using the produced plate for plating transcription | transfer. Sectional drawing of the base material with a conductor layer pattern which consists of a metal pattern by which the conductor layer pattern was blackened. Sectional drawing of the base material with a conductor layer pattern which consists of a metal pattern by which the conductor layer pattern was blackened. Sectional drawing which shows an example of the electromagnetic wave shielding member by which the base material with a conductor layer pattern was affixed on the other base material. Sectional drawing which shows an example of the electromagnetic wave shielding member by which the base material with a conductor layer pattern was affixed on the other base material. Sectional drawing which shows an example of the electromagnetic wave shielding member by which the base material with a conductor layer pattern was affixed on the other base material. Sectional drawing which shows an example of the electromagnetic wave shielding member by which the base material with a conductor layer pattern was affixed on the other base material. The partial cross section figure which shows an example of the base material with a conductor layer pattern. The partial cross section figure which shows the other example of the base material with a conductor layer pattern. The partial expanded sectional view of FIG. The conceptual sectional drawing of the apparatus for producing continuously the base material with a conductor layer pattern using a rotary body. The conceptual sectional drawing of the apparatus for producing continuously the base material with a conductor layer pattern using the hoop-shaped electroconductive base material for plating.

Explanation of symbols

1: conductive substrate for plating 2: concave portion 3: convex portion 4: upper surface of convex portion 4 ': exposed portion of convex portion 5: side surface of convex portion 6: insulating layer 7: resist film 8: insulating film 9: adhesive Film 10: Mask layer 11: Metal 12: Adhesive film 13: Another substrate 14: Adhesive layer 15: Substrate with conductor layer pattern 16, 17: Black layer 18: Metal 19: Other substrate 20: Protective resin 21 : Adhesive 22: Other base material 23: Adhesive or pressure sensitive adhesive 24: Protective film 50: Conductive layer 51: Adhesive layer 52: Base material 100: Electrolytic bath 101: Electrolytic solution 102: Anode 103: Rotating body 104: Piping 105: Pump 106: Metal 107: Film 108: Crimp roll 109: Substrate with conductor layer pattern 110: Hoop-like conductive substrate 111-128: Conveying roll 129: Pretreatment tank 130: Plating tank ( Electrolytic bathtub)
131: Washing tank 132: Blackening treatment tank 133: Washing tank 134: Rust prevention tank 135: Washing tank 136: Plastic film substrate (adhesive film)
137: Crimp roll 138: Substrate with conductive layer pattern

Claims (9)

  A conductor layer pattern having a conductor layer pattern in which the cross-sectional structure of the conductor layer orthogonal to the longitudinal direction of the conductor layer is a U-shaped tube shape in all or a part of the conductor layer pattern in a geometric diagram shape With base material.   2. The substrate with a conductor layer pattern according to claim 1, wherein the width of the conductor layer pattern is 5 to 30 [mu] m.   In the cross-sectional structure of the conductor layer pattern, the conductor layer cross-sectional structure has the highest height from the lowest end of the conductor layer between the middle part and both end parts, and the conductor layer recess has a height from the lowest conductor layer. The base material with a conductor layer pattern according to claim 1 or 2, wherein the minimum height is 50% or more and less than 99% of the maximum height.   The base material with a conductor layer pattern according to claim 3, wherein the minimum height is 1 to 20 μm.   A substrate with a conductor layer pattern, wherein a conductor layer pattern having a geometric diagram shape is bonded to a transparent substrate via a resin layer.   The translucent electromagnetic wave shielding member formed by bonding the surface which has the conductor layer pattern of the base material with a conductor layer pattern in any one of the base materials with a conductor layer pattern in any one of Claims 1-5 to a transparent substrate. .   The translucent electromagnetic wave shielding member formed by coat | covering the conductor layer pattern of the base material with a conductor layer pattern in any one of Claims 1-5 with resin.   The plasma display formed by bonding together the base material with a conductor layer pattern in any one of Claims 1-5 on the display surface. A plasma display comprising the translucent electromagnetic wave shielding member according to claim 6 disposed on the entire surface.

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