JP2007531878A - 半導体装置の両面プロービング - Google Patents
半導体装置の両面プロービング Download PDFInfo
- Publication number
- JP2007531878A JP2007531878A JP2007506333A JP2007506333A JP2007531878A JP 2007531878 A JP2007531878 A JP 2007531878A JP 2007506333 A JP2007506333 A JP 2007506333A JP 2007506333 A JP2007506333 A JP 2007506333A JP 2007531878 A JP2007531878 A JP 2007531878A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- semiconductor device
- test
- probe head
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 239000000523 sample Substances 0.000 claims abstract description 69
- 238000012360 testing method Methods 0.000 claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/319—Tester hardware, i.e. output processing circuits
- G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
- G01R31/31905—Interface with the device under test [DUT], e.g. arrangements between the test head and the DUT, mechanical aspects, fixture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06705—Apparatus for holding or moving single probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
Claims (9)
- テストを受ける半導体装置(10)の特性をテストするためのプローブヘッド構成要素であって:
テストを受ける少なくとも一つの半導体装置(10)を支持する誘電体フィルム(24);
上記誘電体フィルム(24)をぴんと張って支持する支持フレーム(26);
上記テストを受ける半導体装置(10)の第1側(16)と接触するための第1プローブ(28);および
第1位置(P1)と第2位置(P2)の間を移動でき、該第2位置(P2)は上記テストを受ける半導体装置の対向する第2側(18)と接触するためである、第2プローブ(30)を含むプローブヘッド構成要素。 - テストを受ける半導体装置(10)の特性をテストするためのプローブヘッドであって:
テストを受ける少なくとも一つの半導体装置(10)を支持する誘電体フィルム(24);
上記誘電体フィルム(24)をぴんと張って支持する支持フレーム(26);
上記テストを受ける半導体装置(10)の第1側(16)と電気的に接触するための第1プローブ(28)を位置決めする第1支持体(40);および
第2プローブ(30)を第1位置(P1)と第2位置(P2)の間で動かすアクチュエータを有し、該第2位置(P2)は上記テストを受ける半導体装置の対向する第2側(18)と電気的に接触するためである、第2支持体(34)を含むプローブヘッド。 - 請求項2のプローブヘッドに於いて、上記第1プローブ(28)は、上記テストを受ける半導体装置(10)から電気的および光学的信号の両方を受けられるプローブヘッド。
- 請求項3のプローブヘッドに於いて、上記第1プローブ(28)は、上記テストを受ける半導体装置に接触する光学的に透明な表面を有し、そして上記光学的に透明な表面の少なくとも一部は、導電性且つ光学的に透明な被膜で塗被してあるプローブヘッド。
- 請求項4のプローブヘッドに於いて、上記導電性且つ光学的に透明な被膜がインジウム錫酸化物であるプローブヘッド。
- 請求項5のプローブヘッドに於いて、上記テストを受ける半導体装置(10)が発光ダイオードであるプローブヘッド。
- 請求項4のプローブヘッドに於いて、上記第2プローブ(30)は、上記誘電体フィルム(24)を刺通し且つ上記テストを受ける装置(10)を電気的に接触させるために有効なプローブ先端(33)を有するプローブヘッド。
- 請求項7のプローブヘッドに於いて、上記アクチュエータが真空源であるプローブヘッド。
- 請求項7のプローブヘッドに於いて、上記第2プローブ(30)は、直径の小さいプローブ尖端で終る、銅合金ロッドであるプローブヘッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55864704P | 2004-04-01 | 2004-04-01 | |
PCT/US2005/011206 WO2005098460A2 (en) | 2004-04-01 | 2005-03-30 | Double side probing of semiconductor devices |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011172493A Division JP2011232355A (ja) | 2004-04-01 | 2011-08-08 | 半導体装置の両面プロービング |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007531878A true JP2007531878A (ja) | 2007-11-08 |
Family
ID=35125716
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007506333A Pending JP2007531878A (ja) | 2004-04-01 | 2005-03-30 | 半導体装置の両面プロービング |
JP2011172493A Pending JP2011232355A (ja) | 2004-04-01 | 2011-08-08 | 半導体装置の両面プロービング |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011172493A Pending JP2011232355A (ja) | 2004-04-01 | 2011-08-08 | 半導体装置の両面プロービング |
Country Status (9)
Country | Link |
---|---|
US (1) | US7145353B2 (ja) |
EP (1) | EP1740963A4 (ja) |
JP (2) | JP2007531878A (ja) |
KR (1) | KR20060135055A (ja) |
CN (1) | CN100523842C (ja) |
CR (1) | CR8671A (ja) |
MY (1) | MY138997A (ja) |
TW (1) | TWI361468B (ja) |
WO (1) | WO2005098460A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006031568A1 (de) * | 2006-07-07 | 2008-01-10 | Siemens Ag | Verfahren zum elektrischen Testen von Chips |
CN101498759B (zh) * | 2009-03-19 | 2012-04-11 | 安徽天元电子科技有限公司 | 一种测试治具 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6248085A (ja) * | 1985-08-28 | 1987-03-02 | Toshiba Corp | 半導体発光素子の発光出力測定装置 |
JPH0992699A (ja) * | 1995-09-25 | 1997-04-04 | Rohm Co Ltd | 発光素子の測定方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175288A (ja) * | 1991-12-26 | 1993-07-13 | Fujitsu Ltd | 光・電気プローブと光素子の評価方法 |
JP2665424B2 (ja) * | 1992-02-07 | 1997-10-22 | タバイエスペック株式会社 | パッケージ搬送装置及びパッケージテスト装置 |
US5467020A (en) * | 1994-03-29 | 1995-11-14 | International Business Machines Corporation | Testing fixture and method for circuit traces on a flexible substrate |
KR0135244B1 (en) * | 1994-07-12 | 1998-04-25 | Hyundai Electronics Ind | Probe card |
US6404181B1 (en) * | 1996-10-17 | 2002-06-11 | Matsushita Electric Industrial Co., Ltd. | Parts container, method of inspecting parts using same, and apparatus therefor |
US6384612B2 (en) * | 1998-10-07 | 2002-05-07 | Agere Systems Guardian Corporation | Method and apparatus for testing the light output of light emitting devices |
JP2002110751A (ja) * | 2000-10-03 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の検査装置および製造方法 |
KR100403621B1 (ko) * | 2001-03-30 | 2003-10-30 | 삼성전자주식회사 | 전기적 특성 평가를 위한 테스트 패드를 갖는 칩 온 필름패키지 및 칩 온 필름 패키지 형성 방법 |
DE10151441B4 (de) * | 2001-10-18 | 2015-08-20 | Infineon Technologies Ag | Anordnung und Verfahren zur Aufnahme und zum Bearbeiten eines dünnen Wafers |
-
2005
- 2005-03-30 WO PCT/US2005/011206 patent/WO2005098460A2/en active Application Filing
- 2005-03-30 JP JP2007506333A patent/JP2007531878A/ja active Pending
- 2005-03-30 EP EP05746253A patent/EP1740963A4/en not_active Withdrawn
- 2005-03-30 CN CNB2005800102678A patent/CN100523842C/zh not_active Expired - Fee Related
- 2005-03-30 US US11/095,808 patent/US7145353B2/en not_active Expired - Fee Related
- 2005-03-30 KR KR1020067022944A patent/KR20060135055A/ko not_active Application Discontinuation
- 2005-03-31 MY MYPI20051463A patent/MY138997A/en unknown
- 2005-04-01 TW TW094110525A patent/TWI361468B/zh not_active IP Right Cessation
-
2006
- 2006-10-04 CR CR8671A patent/CR8671A/es not_active Application Discontinuation
-
2011
- 2011-08-08 JP JP2011172493A patent/JP2011232355A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6248085A (ja) * | 1985-08-28 | 1987-03-02 | Toshiba Corp | 半導体発光素子の発光出力測定装置 |
JPH0992699A (ja) * | 1995-09-25 | 1997-04-04 | Rohm Co Ltd | 発光素子の測定方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2011232355A (ja) | 2011-11-17 |
US7145353B2 (en) | 2006-12-05 |
EP1740963A2 (en) | 2007-01-10 |
KR20060135055A (ko) | 2006-12-28 |
WO2005098460A3 (en) | 2006-10-26 |
WO2005098460A2 (en) | 2005-10-20 |
TWI361468B (en) | 2012-04-01 |
WO2005098460B1 (en) | 2006-11-30 |
CN1961218A (zh) | 2007-05-09 |
TW200603320A (en) | 2006-01-16 |
US20050225339A1 (en) | 2005-10-13 |
EP1740963A4 (en) | 2010-12-22 |
CN100523842C (zh) | 2009-08-05 |
CR8671A (es) | 2007-01-05 |
MY138997A (en) | 2009-08-28 |
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