JP2007520078A5 - - Google Patents

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Publication number
JP2007520078A5
JP2007520078A5 JP2006551086A JP2006551086A JP2007520078A5 JP 2007520078 A5 JP2007520078 A5 JP 2007520078A5 JP 2006551086 A JP2006551086 A JP 2006551086A JP 2006551086 A JP2006551086 A JP 2006551086A JP 2007520078 A5 JP2007520078 A5 JP 2007520078A5
Authority
JP
Japan
Prior art keywords
floating gate
forming
individual elements
covering
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006551086A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007520078A (ja
Filing date
Publication date
Priority claimed from US10/765,804 external-priority patent/US6991984B2/en
Application filed filed Critical
Publication of JP2007520078A publication Critical patent/JP2007520078A/ja
Publication of JP2007520078A5 publication Critical patent/JP2007520078A5/ja
Pending legal-status Critical Current

Links

JP2006551086A 2004-01-27 2004-12-21 改良された表面形状を用いるメモリ構造の形成方法及びその構造。 Pending JP2007520078A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/765,804 US6991984B2 (en) 2004-01-27 2004-01-27 Method for forming a memory structure using a modified surface topography and structure thereof
PCT/US2004/043197 WO2005074471A2 (en) 2004-01-27 2004-12-21 Method for forming a memory structure using a modified surface topography and structure thereof

Publications (2)

Publication Number Publication Date
JP2007520078A JP2007520078A (ja) 2007-07-19
JP2007520078A5 true JP2007520078A5 (https=) 2008-02-14

Family

ID=34795568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006551086A Pending JP2007520078A (ja) 2004-01-27 2004-12-21 改良された表面形状を用いるメモリ構造の形成方法及びその構造。

Country Status (6)

Country Link
US (1) US6991984B2 (https=)
EP (1) EP1714314A4 (https=)
JP (1) JP2007520078A (https=)
KR (1) KR20070006712A (https=)
CN (1) CN1906743A (https=)
WO (1) WO2005074471A2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7619270B2 (en) 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
JP2007073969A (ja) * 2005-09-07 2007-03-22 Samsung Electronics Co Ltd 電荷トラップ型メモリ素子及びその製造方法
US7592224B2 (en) * 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7723186B2 (en) * 2007-12-18 2010-05-25 Sandisk Corporation Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
US8193055B1 (en) 2007-12-18 2012-06-05 Sandisk Technologies Inc. Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
US8383479B2 (en) * 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
KR101855169B1 (ko) 2011-10-13 2018-05-09 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 프로그램 방법, 불휘발성 메모리 장치를 포함하는 메모리 시스템
JP2013197411A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8822288B2 (en) 2012-07-02 2014-09-02 Sandisk Technologies Inc. NAND memory device containing nanodots and method of making thereof
US8823075B2 (en) 2012-11-30 2014-09-02 Sandisk Technologies Inc. Select gate formation for nanodot flat cell
US8987802B2 (en) 2013-02-28 2015-03-24 Sandisk Technologies Inc. Method for using nanoparticles to make uniform discrete floating gate layer
US9331181B2 (en) 2013-03-11 2016-05-03 Sandisk Technologies Inc. Nanodot enhanced hybrid floating gate for non-volatile memory devices
US9177808B2 (en) 2013-05-21 2015-11-03 Sandisk Technologies Inc. Memory device with control gate oxygen diffusion control and method of making thereof
US8969153B2 (en) 2013-07-01 2015-03-03 Sandisk Technologies Inc. NAND string containing self-aligned control gate sidewall cladding

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US3878549A (en) 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
JPH10189778A (ja) * 1996-12-26 1998-07-21 Sony Corp 半導体記憶素子およびその製造方法
US5852306A (en) 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
US6548825B1 (en) * 1999-06-04 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device including barrier layer having dispersed particles
US6461915B1 (en) 1999-09-01 2002-10-08 Micron Technology, Inc. Method and structure for an improved floating gate memory cell
JP2001118810A (ja) * 1999-10-21 2001-04-27 Matsushita Electric Ind Co Ltd 微粒子の形成方法
US7223444B2 (en) * 2000-05-04 2007-05-29 Qunano Ab Particle deposition apparatus and methods for forming nanostructures
US6413819B1 (en) 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US20040152260A1 (en) * 2001-09-07 2004-08-05 Peter Rabkin Non-volatile memory cell with non-uniform surface floating gate and control gate
US6559008B2 (en) * 2001-10-04 2003-05-06 Hynix Semiconductor America, Inc. Non-volatile memory cells with selectively formed floating gate
US6656792B2 (en) * 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
KR100426483B1 (ko) * 2001-12-22 2004-04-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
US7154140B2 (en) * 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6690059B1 (en) * 2002-08-22 2004-02-10 Atmel Corporation Nanocrystal electron device

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