CN1906743A - 利用修改的表面形态形成存储器结构的方法及其结构 - Google Patents

利用修改的表面形态形成存储器结构的方法及其结构 Download PDF

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Publication number
CN1906743A
CN1906743A CNA2004800408068A CN200480040806A CN1906743A CN 1906743 A CN1906743 A CN 1906743A CN A2004800408068 A CNA2004800408068 A CN A2004800408068A CN 200480040806 A CN200480040806 A CN 200480040806A CN 1906743 A CN1906743 A CN 1906743A
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CN
China
Prior art keywords
floating gate
forming
discrete elements
elements
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800408068A
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English (en)
Chinese (zh)
Inventor
保罗·A·英格索尔
高里尚卡尔·L·真达洛雷
拉马钱德兰·穆拉利达尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1906743A publication Critical patent/CN1906743A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2004800408068A 2004-01-27 2004-12-21 利用修改的表面形态形成存储器结构的方法及其结构 Pending CN1906743A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/765,804 2004-01-27
US10/765,804 US6991984B2 (en) 2004-01-27 2004-01-27 Method for forming a memory structure using a modified surface topography and structure thereof

Publications (1)

Publication Number Publication Date
CN1906743A true CN1906743A (zh) 2007-01-31

Family

ID=34795568

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800408068A Pending CN1906743A (zh) 2004-01-27 2004-12-21 利用修改的表面形态形成存储器结构的方法及其结构

Country Status (6)

Country Link
US (1) US6991984B2 (https=)
EP (1) EP1714314A4 (https=)
JP (1) JP2007520078A (https=)
KR (1) KR20070006712A (https=)
CN (1) CN1906743A (https=)
WO (1) WO2005074471A2 (https=)

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US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7619270B2 (en) 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
JP2007073969A (ja) * 2005-09-07 2007-03-22 Samsung Electronics Co Ltd 電荷トラップ型メモリ素子及びその製造方法
US7592224B2 (en) * 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7723186B2 (en) * 2007-12-18 2010-05-25 Sandisk Corporation Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
US8193055B1 (en) 2007-12-18 2012-06-05 Sandisk Technologies Inc. Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
US8383479B2 (en) * 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
KR101855169B1 (ko) 2011-10-13 2018-05-09 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 프로그램 방법, 불휘발성 메모리 장치를 포함하는 메모리 시스템
JP2013197411A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8822288B2 (en) 2012-07-02 2014-09-02 Sandisk Technologies Inc. NAND memory device containing nanodots and method of making thereof
US8823075B2 (en) 2012-11-30 2014-09-02 Sandisk Technologies Inc. Select gate formation for nanodot flat cell
US8987802B2 (en) 2013-02-28 2015-03-24 Sandisk Technologies Inc. Method for using nanoparticles to make uniform discrete floating gate layer
US9331181B2 (en) 2013-03-11 2016-05-03 Sandisk Technologies Inc. Nanodot enhanced hybrid floating gate for non-volatile memory devices
US9177808B2 (en) 2013-05-21 2015-11-03 Sandisk Technologies Inc. Memory device with control gate oxygen diffusion control and method of making thereof
US8969153B2 (en) 2013-07-01 2015-03-03 Sandisk Technologies Inc. NAND string containing self-aligned control gate sidewall cladding

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Publication number Priority date Publication date Assignee Title
US3878549A (en) 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
JPH10189778A (ja) * 1996-12-26 1998-07-21 Sony Corp 半導体記憶素子およびその製造方法
US5852306A (en) 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
US6548825B1 (en) * 1999-06-04 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device including barrier layer having dispersed particles
US6461915B1 (en) 1999-09-01 2002-10-08 Micron Technology, Inc. Method and structure for an improved floating gate memory cell
JP2001118810A (ja) * 1999-10-21 2001-04-27 Matsushita Electric Ind Co Ltd 微粒子の形成方法
US7223444B2 (en) * 2000-05-04 2007-05-29 Qunano Ab Particle deposition apparatus and methods for forming nanostructures
US6413819B1 (en) 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US20040152260A1 (en) * 2001-09-07 2004-08-05 Peter Rabkin Non-volatile memory cell with non-uniform surface floating gate and control gate
US6559008B2 (en) * 2001-10-04 2003-05-06 Hynix Semiconductor America, Inc. Non-volatile memory cells with selectively formed floating gate
US6656792B2 (en) * 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
KR100426483B1 (ko) * 2001-12-22 2004-04-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
US7154140B2 (en) * 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6690059B1 (en) * 2002-08-22 2004-02-10 Atmel Corporation Nanocrystal electron device

Also Published As

Publication number Publication date
EP1714314A4 (en) 2008-07-09
US6991984B2 (en) 2006-01-31
US20050161731A1 (en) 2005-07-28
JP2007520078A (ja) 2007-07-19
KR20070006712A (ko) 2007-01-11
WO2005074471A3 (en) 2005-12-15
WO2005074471A2 (en) 2005-08-18
EP1714314A2 (en) 2006-10-25

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