JP2007318105A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2007318105A JP2007318105A JP2007113778A JP2007113778A JP2007318105A JP 2007318105 A JP2007318105 A JP 2007318105A JP 2007113778 A JP2007113778 A JP 2007113778A JP 2007113778 A JP2007113778 A JP 2007113778A JP 2007318105 A JP2007318105 A JP 2007318105A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Thin Film Transistor (AREA)
- Details Of Aerials (AREA)
Abstract
【解決手段】既存の大型ガラス基板の製造装置を用いて、ガラス基板上にモリブデン膜(Mo膜)及びその表面に酸化膜を形成し、モリブデン膜及びその表面上に比較的低温(500℃未満)のプロセスで作製される素子を形成した後、その素子をガラス基板から剥離し、可撓性基板に転置する。
【選択図】図1
Description
ここでは液晶表示装置を作製する例を図1を用いて説明する。
ここでは有機TFTを用いたアクティブマトリクス型の発光装置を作製する例を図2を用いて説明する。
ここでは可撓性基板にパッシブマトリクス型の発光装置を作製する例を図5、図6、図7、図8、及び図9を用いて説明する。
本実施の形態では、無線チップとして機能する半導体装置を作製する例を示す。本実施の形態で示す半導体装置は、非接触でデータの読み出しと書き込みが可能であることを特徴としており、データの伝送形式は、一対のコイルを対向に配置して相互誘導によって交信を行う電磁結合方式、誘導電磁界によって交信する電磁誘導方式、電波を利用して交信する電波方式の3つに大別されるが、いずれの方式を用いてもよい。
101:基板
102:モリブデン膜
103:酸化モリブデン膜
104:ゲート電極
105:第1の絶縁膜
106:非晶質構造を有する半導体膜
107:一導電型の不純物元素を含有する半導体膜
108:TFT
109:半導体層
110:導電性を有する半導体層
111:導電性を有する半導体層
112:ソース電極
113:ドレイン電極
114:保護膜
115:層間絶縁膜
116:第1の電極
117:第2の電極
118:配向膜
119:高分子材料
120:液晶
121:可撓性基板
122:接着層
123:可撓性基板
201:基板
202:モリブデン膜
203:酸化モリブデン膜
204:絶縁膜
205:接着層
206:可撓性基板
210:第1の電極
211:ゲート電極
212:ゲート絶縁膜
213:半導体層
214:バッファ層
215:導電層
221:隔壁
222:発光層
223:第2の電極
224:保護膜
225:可撓性基板
227:有機トランジスタ
313:半導体層
314:ソース電極
315:ドレイン電極
331:ゲート電極
332:絶縁膜
413:半導体層
414:ソース電極
415:ドレイン電極
441:ゲート電極
442:絶縁膜
501:第1の基板
502:モリブデン膜
503:酸化モリブデン膜
504:絶縁膜
513:第1の電極
514:隔壁
515R、515G、515B:発光層を含む積層膜
516:第2の電極
521:発光領域
522:逆テーパ状の隔壁
601:第1の基板
602:データ線
603:走査線
604:隔壁
605:領域
607:入力端子
608:接続配線
609a、609b:FPC
701:第1の基板
702:データ線
703:走査線
704:逆テーパ状の隔壁
706:データ線側IC
707:走査線側IC
708、709a、709b:接続配線
710:入力端子
711:FPC
712:ICチップ
810:第2の可撓性基板
811:下地絶縁膜
812:上層
813:下層
814:隔壁
815:発光層を有する積層膜
816:走査線
819:第2の接着層
820:第1の可撓性基板
823:ICチップ
824、825:異方導電性材料
829:透明な酸化物導電膜
830:反射性を有する金属膜
832:FPC
901:耐熱性基板
902:モリブデン膜
903:酸化モリブデン膜
904:導電層
905:樹脂層
906:可撓性基板
907:素子基板
911:可撓性基板
912:導電層
913:集積回路を有するチップ状の半導体装置
1001:基板
1002:剥がした領域
1003:テープ
1111:電源回路
1112:クロック発生回路
1113:データ復調又は変調回路
1114:制御回路
1115:インターフェイス回路
1116:記憶回路
1117:データバス
1118:アンテナ
1120:半導体装置
1121:センサ
1122:センサ回路
2001:筐体
2003:主画面
2004:モデム
2005:受信機
2009:スピーカー部
2006:リモコン操作機
2007:表示部
2008:サブ画面
2010:筐体
2011:表示部
2012:キーボード部
2013:スピーカー部
2700:筐体
2701:パネル
2702:ハウジング
2703:プリント配線基板
2704:操作ボタン
2705:バッテリ
2706:筐体
2708:接続フィルム
2709:画素領域
3001:本体
3002:表示部
3003:表示部
3004:記憶媒体
3005:操作スイッチ
3006:アンテナ
Claims (9)
- 基板上にモリブデン膜を形成し、
前記モリブデン膜上に酸化モリブデン膜を形成し、
前記酸化モリブデン膜上に絶縁膜を形成し、
前記絶縁膜上に非晶質構造を有する半導体膜を形成し、
前記絶縁膜及び前記非晶質構造を有する半導体膜を前記基板から剥離して可撓性基板に前記絶縁膜及び前記非晶質構造を有する半導体膜を転置することを特徴とする半導体装置の作製方法。 - 基板上にモリブデン膜を形成し、
前記モリブデン膜上に酸化モリブデン膜を形成し、
前記酸化モリブデン膜上に絶縁膜を形成し、
前記絶縁膜上に有機化合物を有する半導体膜を形成し、
前記絶縁膜及び前記有機化合物を有する半導体膜を前記基板から剥離して可撓性基板に前記絶縁膜及び前記有機化合物を有する半導体膜を転置することを特徴とする半導体装置の作製方法。 - 基板上にモリブデン膜を形成し、
前記モリブデン膜上に酸化モリブデン膜を形成し、
前記酸化モリブデン膜上に絶縁膜を形成し、
前記絶縁膜上に第1電極を形成し、
前記第1電極上に有機化合物または無機化合物を有する発光層を形成し、
前記発光層上に第2電極を形成し、
前記絶縁膜、前記第1電極、前記発光層、及び前記第2電極を前記基板から剥離して可撓性基板に前記絶縁膜、前記第1電極、前記発光層、及び前記第2電極を転置することを特徴とする半導体装置の作製方法。 - 基板上にモリブデン膜を形成し、
前記モリブデン膜上に酸化モリブデン膜を形成し、
前記酸化モリブデン膜上に印刷法により導電層を印刷し、
前記導電層を焼成し、
前記導電層を覆う絶縁膜を形成し、
前記絶縁膜、前記導電層を前記基板から剥離して可撓性基板に前記絶縁膜、前記導電層を転置することを特徴とする半導体装置の作製方法。 - 請求項4において、前記導電層は、アンテナであることを特徴とする半導体装置の作製方法。
- 請求項4または請求項5において、前記酸化モリブデン膜と前記導電層は接して形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至6のいずれか一において、前記基板は、前記モリブデン膜と接して形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至7のいずれか一において、剥離する前に部分的にレーザ光を照射することを特徴とする半導体装置の作製方法。
- 請求項1乃至8のいずれか一において、前記基板は、ガラス基板、セラミックス基板、或いは石英基板であることを特徴とする半導体装置の作製方法。
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