JP2007300101A - 接着剤の水分吸湿を防止するフリップチップ用ウエハーレベルパッケージの製造方法 - Google Patents
接着剤の水分吸湿を防止するフリップチップ用ウエハーレベルパッケージの製造方法 Download PDFInfo
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Abstract
本発明は、ウエハーレベルパッケージの製造工程において、ダイシング工程中に発生する接着剤への水分吸湿、又は、接着剤の初期に潜在されている水分を効果的に防止・除去することができる、新しいウエハーレベルパッケージの製造方法を提供する。
【解決手段】
本発明は、バンプが形成されたウエハー上に接着剤を塗布して接着剤層を形成する段階、及び、前記接着剤層にレーザーを照射して個別チップ単位にダイシングする段階を包含するウエハーレベルパッケージの製造方法である。
【選択図】図3
Description
本発明は、好ましくは、前記接着剤を塗布する以前の段階において、バンプが形成されているウエハーを個別チップ単位にダイシングする段階をさらに包含する。
本発明は、好ましくは、前記個別チップ単位にダイシングした後、乾燥させる工程によって前記接着剤の内部に含有されている水分を除去する段階をさらに包含する。
本発明は、好ましくは、前記乾燥させる工程は、接着剤の硬化を最高30%程度以内に制限して進行されることを特徴とする。
本発明は、好ましくは、前記接着剤が異方性伝導性接着剤または非伝導性接着剤である。
本発明は、好ましくは、前記レーザーのソースがYAGレーザー、エキシマーレーザー、紫外線レーザー、又は、CO2レーザーから選択されることを特徴とする。
本発明は、好ましくは、前記ウエハーの厚さが200μm以下の薄厚型ウエハーであることを特徴とする。
即ち、ダイシング工程中に発生する接着剤内に吸収された水分を除去するためにダイシング工程の直後、乾燥工程を追加することができる。この時、吸収された水分を充分に乾燥させるためには、できるだけ高い乾燥温度と充分な乾燥時間を必要とする。しかし、これは接着剤の硬化度を増大させる結果をもたらすことになる。なお、接着剤は、以後の工程において基板と接続しなければならないため、接続以前の高い硬化度は接続を進行する間に樹脂による接着剤の場合、レジンの流動性に悪影響を及ぼすことにより、接合特性及び信頼性を低下せしめる。従って、可能な限り、低い温度で乾燥させることによって接着剤の硬化度を殆どない程度に低く維持するとともに、充分な乾燥を実現させることが重要な課題になる。
前述のように、ダイヤモンドホイールを使用する従来のダイシング技術は、冷却水を必須的に使用するため、接着剤の吸湿は避けることができない。一方、レーザーによるダイシング技術は、材料に与えるダメージを最小化することができるというメリットがあるため広く利用されているが、このような用途で使用されるレーザーは、YAGレーザー、エキシマーレーザー、紫外線レーザー、CO2レーザーなどがあり、このようなレーザーによるウエハーの加工は、冷却水を必要としないため、吸湿に対する惧れがない。又、接着剤層は、20〜80μmの非常に薄い薄膜状であるため、レーザーダイシング工程に所要される時間が極めて短いというメリットもある。一方、ダイヤモンドホイールによるダイシングの場合、現在最小切断線幅が40μmあるのに反し、これより薄く微少な切断線幅の接着剤層だけをダイシングすることになる。さらに、チップ上に塗布される接着剤のサイズを調節することができるので、接着剤の塗布サイズをチップよりやや大きくする場合、基板に接続させるとき、充分なフィレット形成にも有利である。
Claims (7)
- バンプが形成されているウエハー上に接着剤を塗布して接着剤層を形成する段階;及び前記接着剤層にレーザーを照射して個別チップ単位にダイシングする段階を包含するウエハーレベルパッケージの製造方法。
- 前記接着剤を塗布する以前の段階において、バンプが形成されているウエハーを個別チップ単位にダイシングする段階をさらに包含する請求項1に記載のウエハーレベルパッケージの製造方法。
- 前記個別チップ単位にダイシングした後、乾燥させる工程によって前記接着剤内に含有されている水分を除去する段階をさらに包含する請求項1又は2に記載のウエハーレベルパッケージの製造方法。
- 前記乾燥させる工程は、前記接着剤の硬化を最高30%以内に制限して進行されることを特徴とする請求項3に記載のウエハーレベルパッケージの製造方法。
- 前記接着剤は、異方性伝導性接着剤または非伝導性接着剤である請求項1又は2に記載のウエハーレベルパッケージの製造方法。
- 前記レーザーのソースは、YAGレーザー、エキシマーレーザー、紫外線レーザー、又は、CO2レーザーから選択されることを特徴とする請求項1又は2に記載のウエハーレベルパッケージの製造方法。
- 前記ウエハーは、厚さが200μm以下の薄厚型ウエハーであることを特徴とする請求項1に記載のウエハーレベルパッケージの製造方法。
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DE102007055017B4 (de) * | 2007-11-14 | 2010-11-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen |
US8048781B2 (en) * | 2008-01-24 | 2011-11-01 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits |
CN101924055A (zh) * | 2009-06-15 | 2010-12-22 | 日东电工株式会社 | 半导体背面用切割带集成膜 |
JP5993845B2 (ja) | 2010-06-08 | 2016-09-14 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 先ダイシング法を行う微細加工されたウェーハへの接着剤の被覆 |
EP2671248A4 (en) | 2011-02-01 | 2015-10-07 | Henkel Corp | ON A PRECUTED WAFER APPLIED FILM ON A DICING TAPE |
KR101960982B1 (ko) | 2011-02-01 | 2019-07-15 | 헨켈 아이피 앤드 홀딩 게엠베하 | 사전 절단되어 웨이퍼상에 도포된 언더필 필름 |
US20120273935A1 (en) * | 2011-04-29 | 2012-11-01 | Stefan Martens | Semiconductor Device and Method of Making a Semiconductor Device |
JP2013115185A (ja) * | 2011-11-28 | 2013-06-10 | Nitto Denko Corp | 半導体装置の製造方法 |
US9651513B2 (en) * | 2012-10-14 | 2017-05-16 | Synaptics Incorporated | Fingerprint sensor and button combinations and methods of making same |
US10147702B2 (en) * | 2016-10-24 | 2018-12-04 | Palo Alto Research Center Incorporated | Method for simultaneously bonding multiple chips of different heights on flexible substrates using anisotropic conductive film or paste |
US11081392B2 (en) * | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
CN112349607A (zh) * | 2020-11-11 | 2021-02-09 | 北京航天微电科技有限公司 | 空气腔型薄膜滤波器的封装方法和空气腔型薄膜滤波器 |
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