JP2007297659A5 - - Google Patents
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- JP2007297659A5 JP2007297659A5 JP2006125425A JP2006125425A JP2007297659A5 JP 2007297659 A5 JP2007297659 A5 JP 2007297659A5 JP 2006125425 A JP2006125425 A JP 2006125425A JP 2006125425 A JP2006125425 A JP 2006125425A JP 2007297659 A5 JP2007297659 A5 JP 2007297659A5
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- cleaning
- cylindrical substrate
- degreasing
- contamination
- tank
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- 238000004140 cleaning Methods 0.000 claims description 105
- 239000007788 liquid Substances 0.000 claims description 63
- 238000011109 contamination Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 56
- 238000005238 degreasing Methods 0.000 claims description 39
- 238000003860 storage Methods 0.000 claims description 37
- 238000001514 detection method Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 22
- 238000001035 drying Methods 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 11
- 238000002835 absorbance Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010730 cutting oil Substances 0.000 claims description 7
- 238000002329 infrared spectrum Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005755 formation reaction Methods 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 4
- 230000003796 beauty Effects 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- NNHHDJVEYQHLHG-UHFFFAOYSA-N Potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 2
- 239000004111 Potassium silicate Substances 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 229910052913 potassium silicate Inorganic materials 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 230000002829 reduced Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000003628 erosive Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000717 retained Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Description
一方、(C)の洗浄工程でアルミニウム表面に付着した汚物は、有機物汚染と洗浄シミの2つに大きく分けられる。有機物汚染は、切削工程でアルミニウム表面の酸化を防ぐためにコーティングされた切削油を脱脂槽にて完全に除去できなかった時に生じる場合がある。また、洗浄シミは、薬液によるシミと水によるシミとに分けることができる。薬液によるシミの1つ目の原因として、洗浄工程を繰り返し行うことにより、円筒状基体に付着した脱脂槽の薬液がリンス槽へと持ち込まれるためにリンス槽内の洗浄液が汚染されることが挙げられる。これにより、リンス工程後の円筒状基体表面に薬液が付着して薬液によるシミが発生する。また、もう1つの原因として、脱脂槽の温度上昇が挙げられる。これにより、円筒状基体自体の温度が上昇するため、脱脂槽からリンス槽への搬送中に円筒状基体表面が乾いてしまい、その結果、円筒状基体表面に付着していた薬液が固着するために薬液によるシミが発生する。そして、水によるシミの原因としては、リンス工程での洗浄液が完全に除去できない場合が挙げられる。これは、乾燥工程にて乾燥が適切に行われなかったために、円筒状基体表面に水滴が残ってしまい、これが乾くことによって水によるシミが発生する。 On the other hand, the filth adhering to the aluminum surface in the cleaning step (C) can be broadly divided into organic contamination and cleaning stains. Organic contamination may occur when the cutting oil coated to prevent oxidation of the aluminum surface in the cutting process cannot be completely removed in the degreasing tank. Further, the cleaning stain can be divided into a stain caused by a chemical solution and a stain caused by water. The first cause of the stain due to the chemical solution is that the cleaning solution in the rinsing tank is contaminated because the chemical solution in the degreasing tank attached to the cylindrical substrate is brought into the rinsing tank by repeatedly performing the cleaning process. It is done. Thereby, a chemical | medical solution adheres to the cylindrical base | substrate surface after a rinse process, and the spot by a chemical | medical solution generate | occur | produces. Moreover, the temperature rise of a degreasing tank is mentioned as another cause. As a result, the temperature of the cylindrical substrate itself rises, so that the surface of the cylindrical substrate is dried during the transfer from the degreasing tank to the rinse tank, and as a result, the chemical solution adhering to the surface of the cylindrical substrate is fixed. A stain due to chemicals is generated. And as a cause of the stain by water, the case where the washing | cleaning liquid in a rinse process cannot be removed completely is mentioned. This is because the drying is not properly performed in the drying process, so that water droplets remain on the surface of the cylindrical substrate, and when this is dried, a stain due to water is generated.
詳細に記述すると、本発明は、アルミニウムを主成分とする円筒状基体に切削油を用いて旋盤による切削加工を施す切削工程と、加工後の円筒状基体を脱脂及び清浄化するための洗浄工程とを有する円筒状基体の洗浄方法において、
前記円筒状基体を脱脂及び清浄化するための洗浄液が貯留された貯留槽と、前記円筒状基体表面の汚染状態及び/又は前記洗浄液の汚染状態を検出する検出手段とを用いて前記円筒状基体の清浄化を行うことを特徴とする円筒状基体の洗浄方法に関する。
More specifically, the present invention relates to a cutting process in which a cylindrical base body mainly composed of aluminum is subjected to a cutting process using a lathe using a cutting oil, and a cleaning process for degreasing and cleaning the cylindrical base body after processing. In a method for cleaning a cylindrical substrate having
Above using a reservoir cleaning liquid for degreasing and cleaning the cylindrical substrate it is stored, and a detecting means for detecting the contamination state of pollution like Tai及 beauty / or the cleaning of the cylindrical substrate surface The present invention relates to a method for cleaning a cylindrical substrate, characterized in that the cylindrical substrate is cleaned.
上記のように、アルミニウムを母材とする円筒状基体表面及び/又は、前記円筒状基体を洗浄する貯留槽内に貯留された洗浄液の汚染状態を検出して厳密に管理することにより、経時的に発生する洗浄液の汚染や突発的な洗浄装置の異常に起因した異常成長部の発生を安定して抑制することが可能となる。この結果、画像欠陥の良好な電子写真感光体を安定して提供することが可能となった。更に、脱脂槽や皮膜形成槽内の洗浄液を能力が低下するまで使うことが可能となるため、メンテナンス回数が低減し、生産コストの低減が可能となった。 As described above, it is possible to detect the contamination state of the cleaning liquid stored in the surface of the cylindrical base body using aluminum as a base material and / or the storage tank for cleaning the cylindrical base body, and to strictly manage it. Thus, it is possible to stably suppress the occurrence of abnormal growth due to contamination of the cleaning liquid generated in the process or sudden abnormality of the cleaning apparatus. As a result, it has become possible to stably provide an electrophotographic photoreceptor having good image defects. Furthermore, since it becomes possible to use the cleaning liquid in the degreasing tank or the film forming tank until the capacity is lowered, the number of maintenance operations is reduced, and the production cost can be reduced.
脱脂槽11の第1槽には、円筒状基体表面101に付着した切削油の除去ができたかを判別するために、円筒状基体表面101の汚染状態を検出するための汚染検出手段102が設置されている。また、リンス槽30第2槽には、脱脂槽11から持ち込まれた洗浄液による汚染を判別するために、リンス槽13内の洗浄液中の汚染状態を検出するための汚染検出手段111が設置されている。 In the first tank of the degreasing tank 11, a contamination detecting means 102 for detecting the contamination state of the cylindrical substrate surface 101 is installed in order to determine whether or not the cutting oil adhering to the cylindrical substrate surface 101 has been removed. Has been. Further, in the second tank of the rinsing tank 30, a contamination detecting means 111 for detecting the contamination state in the cleaning liquid in the rinsing tank 13 is installed in order to determine the contamination due to the cleaning liquid brought in from the degreasing tank 11. Yes.
切削加工後の円筒状基体201は、投入台210上に置かれた後、搬送機構206により脱脂槽に搬送される。図5は、図2の脱脂槽21の詳細図である。脱脂槽51内には、純水で希釈された界面活性剤の洗浄液504が貯留されており、貯留槽503と貯槽512の間を循環ポンプ516により洗浄液が循環している。このとき、洗浄液504は、ヒーター517及び冷却機構518により所定の温度となるように制御されている。また、槽内循環ポンプ514によって、槽内循環ライン513を通って槽内循環が行われている。搬送機構506は、搬送レール519と搬送アーム521よりなり、搬送アーム521は、搬送レール519上を移動する移動機構520、円筒状基体501を保持するチャッキング機構523及びチャッキング機構523を上下させるためのエアーシリンダー522よりなっている。 The cylindrical base 201 after the cutting process is placed on the input table 210 and then transported to the degreasing tank by the transport mechanism 206. FIG. 5 is a detailed view of the degreasing tank 21 of FIG. A detergent cleaning liquid 504 diluted with pure water is stored in the degreasing tank 51 , and the cleaning liquid is circulated between the storage tank 503 and the storage tank 512 by a circulation pump 516. At this time, the cleaning liquid 504 is controlled to have a predetermined temperature by the heater 517 and the cooling mechanism 518. Further, the tank circulation is performed through the tank circulation line 513 by the tank circulation pump 514. The transport mechanism 506 includes a transport rail 519 and a transport arm 521, and the transport arm 521 moves up and down a moving mechanism 520 that moves on the transport rail 519, a chucking mechanism 523 that holds the cylindrical base 501, and a chucking mechanism 523. Air cylinder 522 for the purpose.
次に、円筒状基体201は、搬送機構206により皮膜形成槽に搬送される。図6は、図2の皮膜形成槽の詳細図である。皮膜形成槽61内には、純水にインヒビターを加えた洗浄液604が貯留されており、脱脂槽と同様に貯槽循環及び槽内循環が行われている。この皮膜形成槽61では、円筒状基体601表面に腐食防止のための皮膜の形成が行われる。皮膜形成工程が終了した後、受け台609により洗浄液604より取り出し、搬送機構606により引き上げられる。このとき、皮膜形成槽61内に貯留されている洗浄液604の汚染を検出する汚染検出手段611により皮膜形成工程後の洗浄液604の状態を測定する。 Next, the cylindrical substrate 201 is transferred to the film forming tank by the transfer mechanism 206. 6 is a detailed view of the film forming tank of FIG. A cleaning liquid 604 obtained by adding an inhibitor to pure water is stored in the film forming tank 61 , and storage tank circulation and tank circulation are performed in the same manner as the degreasing tank. In the film forming tank 61, a film for preventing corrosion is formed on the surface of the cylindrical substrate 601. After the film formation step is completed, the film is taken out from the cleaning liquid 604 by the cradle 609 and pulled up by the transport mechanism 606. At this time, to measure the state of the cleaning liquid 604 after the film forming process by contamination detection means 611 for detecting contamination of the cleaning liquid 604 which is retained in the film forming chamber 61.
本発明において、アルミニウムを母材とする円筒状基体の洗浄工程は、前記円筒状基体表面の汚染状態、及び/又は円筒状基体を脱脂及び清浄化するための貯留槽内に貯留された洗浄液の汚染状態の少なくとも1つを検出しながら円筒状基体の清浄化を行うことを特徴としている。 In the present invention, the washing step of the cylindrical substrate containing aluminum as the base material, the cylindrical substrate surface contamination state, and / or cylindrical substrate degreasing and has been in the cleaning liquid storage in the reservoir for cleaning The cylindrical substrate is cleaned while detecting at least one of the contamination states.
ここでいう脱脂工程終了後とは、脱脂槽11内の洗浄液104(1)から取り出される、すなわち、円筒状基体が脱脂槽から引き上げられてから次の洗浄槽に浸漬するまでの間であり、同様に、乾燥工程終了後とは、乾燥槽14の処理液104(4)から取り出される、すなわち、乾燥槽14から引き上げられてから洗浄後ストッカー108に置かれるまでの間を意味する。 After the degreasing step here is taken out from the cleaning liquid 104 (1) in the degreasing tank 11, that is, from when the cylindrical substrate is pulled up from the degreasing tank until it is immersed in the next cleaning tank, Similarly, the term “after the drying process” means that the process is taken out from the treatment liquid 104 (4) in the drying tank 14, that is, after being lifted from the drying tank 14 until being placed in the stocker 108 after cleaning.
皮膜形成工程終了後の円筒状基体表面の汚染状態を検出する場合、汚染検出手段にて検出する物質は、皮膜形成工程へと持ち込まれた脱脂工程で用いられる洗浄液を検出することが好ましい。ここでいう皮膜形成工程終了後とは、円筒状基体が皮膜形成槽22内の洗浄液204(2)から取り出される、すなわち、皮膜形成槽22から引き上げられてから次の洗浄槽に浸漬するまでの間を意味する。 When detecting the contamination state on the surface of the cylindrical substrate after completion of the film formation process, it is preferable that the substance detected by the contamination detection means is a cleaning liquid used in the degreasing process brought into the film formation process. Here, the post-film-forming process is completed to say, the cylindrical substrate is removed from the cleaning liquid 204 (2) in the film forming chamber 22, i.e., from being lifted from the film forming chamber 22 to be immersed in the next washing tank Means between.
本発明において、異なる機能を有する洗浄槽の少なくとも2つ以上に、少なくとも2つ以上の汚染検出手段を用いて汚染を検出する場合には、図3のように、円筒状基体表面の汚染状態を検出する汚染検出手段302の測定位置が円筒状基体301(b)の長手方向で異なることが好ましい。また、前記洗浄液の汚染状態を検出する汚染物質が各洗浄槽で異なることが好ましい。更に、円筒状基板表面と前記洗浄液の汚染状態が異なる洗浄槽にて検出を行う場合には、検出する汚染物質が各槽で異なる種類であることが好ましい。 In the present invention, in the case where contamination is detected using at least two or more contamination detection means in at least two cleaning tanks having different functions, the contamination state on the surface of the cylindrical substrate is determined as shown in FIG. It is preferable that the measurement position of the contamination detection means 302 to be detected differs in the longitudinal direction of the cylindrical substrate 301 (b). Moreover, it is preferable that the contaminants for detecting the contamination state of the cleaning liquid are different in each cleaning tank. Furthermore, when the detection is performed in the cleaning tank in which the contamination state of the cylindrical substrate surface and the cleaning liquid is different , it is preferable that the detected contaminants are of different types in each tank.
図8は、洗浄液804として薬液を用いる脱脂槽及び皮膜形成槽等の貯槽を有する洗浄槽における自動洗浄液交換工程を説明するための概略説明図である。貯留槽803内に貯留された洗浄液804の汚染を汚染検出手段811が検出した場合、汚染検出手段811より出力された信号により制御部828が、循環ラインポンプ814、貯留槽供給用ポンプ816を止め、ヒーター817を切る。その後、開閉バルブ824を開き、貯留槽803、循環ライン813及び貯槽812に入っている洗浄液を排出する。貯留槽803及び貯槽812に設置されている不図示の液面センサーにより貯留槽803及び貯槽812内に洗浄液が無くなったことを検出した後、液面センサーより出力された信号により開閉バルブ824を閉め、次に予備貯槽開閉バルブ826を開き、予備貯槽ポンプ825を稼働して予備貯槽827から貯槽812へと新しい洗浄液を供給する。貯槽812の液面センサーが貯槽812への洗浄液の供給を識別した後、貯留槽供給用ポンプ816、ヒーター817を稼働させる。貯留槽803の液面センサーが洗浄液の所定の貯留量を識別した後、循環ラインポンプ814を稼働させる。予備貯槽の不図示の液面センサーが液面を検出したら、予備貯槽ポンプ825を止め、予備貯槽開閉バルブ826を閉める、新しい洗浄液の交換を終了する。新しい洗浄液の交換終了後、所定の温度まで洗浄液が昇温された後、再び洗浄工程が稼働する。 FIG. 8 is a schematic explanatory diagram for explaining an automatic cleaning liquid replacement step in a cleaning tank having a storage tank such as a degreasing tank and a film forming tank using a chemical as the cleaning liquid 804. When the contamination detection unit 811 detects the contamination of the cleaning liquid 804 stored in the storage tank 803 , the control unit 828 stops the circulation line pump 814 and the storage tank supply pump 816 by a signal output from the contamination detection unit 811. Turn off the heater 817. Thereafter, the opening / closing valve 824 is opened, and the cleaning liquid contained in the storage tank 803, the circulation line 813, and the storage tank 812 is discharged. After detecting that there is no cleaning liquid in the storage tank 803 and the storage tank 812 by a liquid level sensor (not shown) installed in the storage tank 803 and the storage tank 812, the open / close valve 824 is closed by a signal output from the liquid level sensor. Next, the auxiliary storage tank opening / closing valve 826 is opened, and the auxiliary storage tank pump 825 is operated to supply new cleaning liquid from the auxiliary storage tank 827 to the storage tank 812. After the liquid level sensor of the storage tank 812 identifies the supply of the cleaning liquid to the storage tank 812, the storage tank supply pump 816 and the heater 817 are operated. After the liquid level sensor in the storage tank 803 identifies a predetermined storage amount of the cleaning liquid, the circulation line pump 814 is operated. When the liquid level sensor (not shown) of the preliminary storage tank detects the liquid level, the preliminary storage tank pump 825 is stopped, the preliminary storage tank opening / closing valve 826 is closed, and the replacement of the new cleaning liquid is completed. After the replacement of the new cleaning liquid, the cleaning process is started again after the cleaning liquid is heated to a predetermined temperature.
図9は、リンス槽及び乾燥槽等の貯槽の無い洗浄槽における自動洗浄液交換工程を説明するための概略説明図である。貯留槽903内に貯留された洗浄液904の汚染を汚染検出手段911が検出した場合、汚染検出手段911より出力された信号により制御部928が、供給ラインからの供給を止めた後、循環ラインポンプ914を止める。その後、開閉バルブ924を開き、貯留槽903及び循環ライン913内の洗浄液904を排出する。貯留槽903に設置されている不図示の液面センサーにより貯留槽903に洗浄液904が無くなったことを検出した後、液面センサーより出力された信号により開閉バルブ924を閉めた後、供給ラインを開いて洗浄液904を供給する。貯留槽903の液面センサーが洗浄液の所定の貯留量を識別した後、循環ラインポンプ914を稼働させ、新しい洗浄液の交換を終了する。新しい洗浄液の交換終了後、所定の温度まで洗浄液が昇温された後、再び洗浄工程が稼働する。 FIG. 9 is a schematic explanatory diagram for explaining an automatic cleaning liquid replacement step in a cleaning tank without a storage tank such as a rinse tank and a drying tank. When the contamination detection unit 911 detects contamination of the cleaning liquid 904 stored in the storage tank 903 , the control unit 928 stops the supply from the supply line according to the signal output from the contamination detection unit 911, and then the circulation line pump Stop 914. Thereafter, the opening / closing valve 924 is opened, and the cleaning liquid 904 in the storage tank 903 and the circulation line 913 is discharged. After detecting the absence of the cleaning liquid 904 in the storage tank 903 by a liquid level sensor (not shown) installed in the storage tank 903, the open / close valve 924 is closed by a signal output from the liquid level sensor, and then the supply line is connected. Open and supply cleaning liquid 904. After the liquid level sensor in the storage tank 903 identifies a predetermined storage amount of the cleaning liquid, the circulation line pump 914 is operated and the replacement of the new cleaning liquid is completed. After the replacement of the new cleaning liquid, the cleaning process is started again after the cleaning liquid is heated to a predetermined temperature.
まず、全工程の貯留槽を清掃し、新しい洗浄液に交換した。各貯留槽内に貯留されている洗浄液の温度が表1の条件で安定したのを確認した後、洗浄前ストッカーに置かれた円筒状基体を搬送アームにより脱脂槽へと搬送する。搬送された円筒状基体は、界面活性剤として、アルミ用侵食低起泡性液状脱脂剤(ヘンケルジャパン(株)社、商品名;almecoCT−29)を純水で30倍に希釈した洗浄液に浸透させ、約40kHzの超音波を5W/リットルの出力で超音波処理を所定の時間行った。脱脂槽での洗浄が終了後、搬送アームにより脱脂槽より円筒状基体が完全に引き上げられた時に、円筒状基体上端から30mm位置を円筒状基体表面の汚染を検出するためのIRスペクトルによる汚染検出手段(株式会社チノー製;赤外線多成分計IRMA52S2)により、比較波長3.20μm、汚染検出用波長3.38μmでの吸光度を測定した。そして、比較波長の吸光度を基準とした時の汚染検出用波長3.38μmの吸光度から、円筒状基体表面に付着した切削油の吸光度を求めた。この3.38μmの波長は、下記に示す<IRスペクトル測定>により切削油を測定した際に最も吸収率の高い波長である。また、3.20μmの波長は、切削油を測定した際に変化が見られなかった波長である。
First, the storage tank of all processes was cleaned and replaced with a new cleaning solution. After confirming that the temperature of the cleaning liquid stored in each storage tank is stable under the conditions shown in Table 1, the cylindrical substrate placed on the pre-cleaning stocker is transferred to the degreasing tank by the transfer arm. The conveyed cylindrical substrate penetrates into a cleaning solution obtained by diluting an erosion low foaming liquid degreasing agent for aluminum (Henkel Japan Co., Ltd., trade name: almeco CT-29) 30 times with pure water as a surfactant. Then, ultrasonic treatment was performed for a predetermined time with an ultrasonic wave of about 40 kHz and an output of 5 W / liter. Contamination detection by IR spectrum to detect the contamination of the cylindrical substrate surface at a position 30 mm from the upper end of the cylindrical substrate when the cylindrical substrate is completely pulled up from the degreasing tank by the transfer arm after cleaning in the degreasing tank The absorbance at a comparative wavelength of 3.20 μm and a contamination detection wavelength of 3.38 μm was measured by means (manufactured by Chino Corporation; IR multi-component meter IRMA52S2). And the light absorbency of the cutting oil adhering to the cylindrical base | substrate surface was calculated | required from the light absorbency of wavelength 3.38 micrometers for contamination detection when the light absorbency of a comparison wavelength was made into the reference | standard. This wavelength of 3.38 μm is the wavelength having the highest absorption rate when cutting oil is measured by <IR spectrum measurement> shown below. The wavelength of 3.20 μm is a wavelength at which no change was observed when the cutting oil was measured.
次に、皮膜形成槽に円筒状基体を搬送し、水温25℃に制御した純水(10MΩ/cm)に珪酸カリウム(日本化学工業株式会社製;商品名;A珪酸カリ)を純
水で0.5%に希釈した洗浄液中に円筒状基体を浸漬させた。皮膜形成槽での洗浄が終了後、円筒状基体が完全に洗浄液から搬出された時点で、皮膜形成槽内の洗浄液の汚染を検出するためのIRスペクトルによる汚染検出手段(株式会社チノー製;赤外線多成分計IRMA61S2+IR−WCC1)により、比較波長として2.10μm、汚染検出用波長2.31μmでの吸光度を測定した。そして、比較波長の吸光度を基準とした時の汚染検出用波長2.31μmの吸光度から、皮膜形成槽内に貯留されている洗浄液中の界面活性剤の吸光度を求めた。この2.31μmの波長は、下記に示す<IRスペクトル測定>により脱脂工程で用いられる界面活性剤を測定した際に吸収率の高い波長である。また、2.10μmの波長は、界面活性剤を測定した際に吸収率に変化が見られなかった波長である。
Next, the cylindrical substrate was transported to the film formation tank, and potassium silicate (manufactured by Nippon Chemical Industry Co., Ltd .; trade name: A potassium silicate) was added to pure water (10 MΩ / cm) controlled at a water temperature of 25 ° C. with pure water. The cylindrical substrate was immersed in a cleaning solution diluted to 5%. Contamination detection means by IR spectrum for detecting contamination of the cleaning liquid in the film forming tank when the cylindrical substrate is completely taken out of the cleaning liquid after cleaning in the film forming tank (manufactured by Chino Corporation; infrared ray) Absorbance at a comparison wavelength of 2.10 μm and a contamination detection wavelength of 2.31 μm was measured with a multi-component meter IRMA61S2 + IR-WCC1). Then, the absorbance of the contamination detection wavelength 2.31μm when relative to the absorbance of the comparison wavelength was determined the absorbance of the surfactant in the cleaning liquid stored in the film forming chamber. The wavelength of 2.31 μm is a wavelength having a high absorption rate when the surfactant used in the degreasing step is measured by <IR spectrum measurement> shown below. The wavelength of 2.10 μm is a wavelength at which no change was observed in the absorption rate when the surfactant was measured.
但し、各汚染検出手段の警報出力設定として、脱脂槽に設置した汚染検出手段は吸光度が0.30、脱脂槽は0.40、乾燥槽は0.35とし、各汚染検出手段から警報が出力された場合には、手動にて汚染が検出された洗浄槽内の洗浄液を交換した。
<IRスペクトル測定>
φ200のシリコンウエハを1cm×3cmの大きさに切断し、この切断片をアセトンの入った金属パットに入れ、約40kHzの超音波洗浄機で10分処理した。超音波洗浄終了後、オーブンにより110度で1時間加熱し乾燥させた。
However, as the alarm output setting of each contamination detection means, the contamination detection means installed in the degreasing tank has an absorbance of 0.30, the degreasing tank is 0.40, and the drying tank is 0.35, and an alarm is output from each contamination detection means. In such a case, the cleaning liquid in the cleaning tank in which contamination was detected manually was replaced.
<IR spectrum measurement>
A φ200 silicon wafer was cut into a size of 1 cm × 3 cm, and this cut piece was placed in a metal pad containing acetone and treated with an ultrasonic cleaner of about 40 kHz for 10 minutes. After the ultrasonic cleaning was completed, it was dried by heating in an oven at 110 degrees for 1 hour.
但し、各汚染検出手段の警報出力設定として、脱脂槽に設置した汚染検出手段は吸光度が0.30、脱脂槽は0.40、乾燥槽は0.35とし、各汚染検出手段から警報が出力された場合には、自動で汚染が検出された洗浄槽内の洗浄液を交換した。 However, as the alarm output setting of each contamination detection means, the contamination detection means installed in the degreasing tank has an absorbance of 0.30, the degreasing tank is 0.40, and the drying tank is 0.35, and an alarm is output from each contamination detection means. In such a case, the cleaning solution in the cleaning tank in which contamination was automatically detected was replaced.
Claims (10)
前記円筒状基体を脱脂及び清浄化するための洗浄液が貯留された貯留槽と、前記円筒状基体表面の汚染状態及び/又は前記洗浄液の汚染状態を検出する検出手段とを用いて前記円筒状基体の清浄化を行うことを特徴とする円筒状基体の洗浄方法。 A cutting step of performing cutting using a lathe with a cutting oil to the cylindrical substrate consisting mainly of aluminum, a method of cleaning the cylindrical substrate and a cleaning process for degreasing and cleaning the cylindrical substrate after processing In
A storage tank cleaning liquid for degreasing and cleaning the cylindrical substrate is stored, and a detecting means for detecting the contamination state of pollution like Tai及 beauty / or before Kiarai solution purification of the cylindrical substrate surface A method for cleaning a cylindrical substrate, wherein the cylindrical substrate is cleaned.
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