KR20180025201A - Substrate processing device and substrate processing method - Google Patents

Abstract

Provided are a substrate processing apparatus and a substrate processing method, which can thoroughly clean a substrate after polishing with a small number of processes. The substrate processing apparatus comprises a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

Description

[0001] SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD [0002]

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In a substrate processing apparatus such as a CMP (Chemical Mechanical Polishing) apparatus, a substrate is polished using a slurry, and then the substrate is cleaned. However, cleaning in the substrate processing apparatus is not necessarily sufficient, and the substrate is often cleaned using a substrate cleaning apparatus which is different from the substrate processing apparatus. In this case, there is a problem that the number of steps of the substrate processing is increased.

Japanese Patent Application Laid-Open No. 2008-114183 Japanese Patent No. 3725809

SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of sufficiently cleaning a polished substrate with a small number of process water.

According to one aspect of the present disclosure, there is provided a polishing apparatus comprising: a polishing section for polishing a substrate using a polishing liquid; a first cleaning section for cleaning the substrate polished by the polishing section using sulfuric acid and hydrogen peroxide solution; There is provided a substrate processing apparatus comprising a second cleaner for cleaning a substrate cleaned by using a basic chemical liquid and hydrogen peroxide water, and a drying unit for drying the substrate cleaned by the second cleaner.

The first and second cleaning units are installed in the substrate processing apparatus. The polishing liquid can be removed by washing with a first washing machine using sulfuric acid and hydrogen peroxide water. By the cleaning with the second cleaner using the basic chemical solution and the hydrogen peroxide solution, components attributed to the sulfuric acid used in the first cleaner can be removed. This makes it possible to sufficiently clean the polished substrate with a small number of process wafers.

It is preferable not to have a mechanism for drying the substrate after being polished by the polishing portion and before being cleaned by the first cleaning portion.

It is preferable that the polishing apparatus further comprises a carrying section for carrying the substrate polished by the polishing section to the first cleaning section without drying.

More preferably, the apparatus further comprises a first liquid supply mechanism for putting liquid on the substrate being carried by the carry section.

The transfer section may further comprise a substrate station on which the substrate before polishing is polished by the polishing section and before the substrate is cleaned by the first cleaning section and a second liquid supply mechanism .

By not drying the substrate after polishing, it is possible to efficiently remove the residue on the substrate at the time of cleaning by the first cleaner.

Wherein the first cleaner is housed in a first housing provided with a first shutter capable of being opened and closed and the second cleaner is housed in a second housing provided with a second shutter capable of being opened and closed, And is housed in a third housing provided with a shutter.

This makes it possible to prevent the sulfuric acid or the hydrogen peroxide used in the first washing section from entering the second washing section or the drying section and to prevent the basic chemical agent or the hydrogen peroxide used in the second washing section from entering the first washing section or the drying section Can be suppressed.

And a third cleaning part for cleaning the substrate polished by the polishing part by using a basic chemical solution and hydrogen peroxide water, wherein the first cleaning part is a part for cleaning the substrate cleaned by the third cleaning part desirable.

It is preferable that the third cleaning unit cleans the cleaning member while bringing the cleaning member into contact with the substrate, while supplying a basic chemical solution and hydrogen peroxide solution to the substrate.

It is preferable that the second cleaning unit performs cleaning of the substrate using a basic chemical solution and hydrogen peroxide water, and then performs two-fluid jet cleaning.

By these constitutions, the washing power is further improved.

The polishing section may polish the substrate using a polishing liquid containing ceria.

By the cleaning by the first-tier government, the residue of ceria can be reduced.

According to an aspect of the present disclosure, there is provided a substrate processing apparatus comprising a polishing step of polishing a substrate using a polishing liquid by a polishing section of the substrate processing apparatus, and a polishing step of polishing the substrate by a first cleaning section of the substrate processing apparatus , A first cleaning step of cleaning the substrate by using sulfuric acid and hydrogen peroxide solution, and thereafter cleaning the substrate with a basic chemical solution and hydrogen peroxide solution by a second cleaning part in the substrate processing apparatus And a drying step of drying the substrate by a second cleaning step and then a drying part of the substrate processing apparatus.

The first cleansing portion and the second cleansing portion provided in the substrate processing apparatus perform cleaning using sulfuric acid and hydrogen peroxide solution and cleansing using a basic chemical solution and hydrogen peroxide solution. This makes it possible to sufficiently clean the polished substrate with a small number of process wafers.

And a transporting step of transporting the substrate from the polishing section to the first cleaning section without drying the polished substrate after the polishing step.

By not drying the substrate after polishing, it is possible to efficiently remove the residue on the substrate at the time of cleaning by the first cleaner.

According to one aspect of the present invention, there is provided a cleaning method comprising: a first cleaning step of cleaning a substrate to which cerium ions are attached using sulfuric acid and hydrogen peroxide water; and a second cleaning step of cleaning the substrate with a basic chemical solution and hydrogen peroxide solution There is provided a substrate processing method comprising a step of drying a substrate, and a drying step of drying the substrate.

Sulfuric acid and hydrogen peroxide water are used to clean the substrate, whereby cerium ions can be removed. Subsequently, the substrate can be cleaned using a basic chemical solution and hydrogen peroxide water to remove sulfuric acid.

In the first cleaning step, a substrate to which cerium ions are attached having a cerium concentration of 1.0 x 10 ¹⁰ atms / cm 2 or more is washed, and the cerium concentration of the substrate subjected to the drying step is measured by the ICP-MS method Or less.

In the first cleaning step and / or the second cleaning step, the substrate may be heated.

A step of supplying a basic chemical solution and a hydrogen peroxide solution to the substrate to which cerium ions have been attached, a step of contacting a rotating sponge member, and a step of supplying a gas and a liquid jet It is preferable to provide a number of processes.

By performing such rough cleaning, cleaning power in a series of substrate cleaning processes is improved.

Wherein the first cleaning step, the second cleaning step and the drying step are performed in a cleaning tank, the step of cleaning the inside of the cleaning tank between the first cleaning step and the second cleaning step, And a step of cleaning the inside of the cleaning tank between the two cleaning step and the drying step.

Thereby, the reaction of the chemical liquid (particularly, the chemical liquid of sulfuric acid with the basic liquid) can be suppressed.

And a polishing step of polishing the substrate using a slurry containing cerium ions before the first cleaning step. It is preferable that the substrate after polishing is not dried between the polishing step and the polishing step.

By not drying the polished substrate, there is a fear of occurrence of watermarks and a fear of sticking of ceria to the wafer, and the ceria can be removed more reliably from the substrate.

It is possible to sufficiently clean the polished substrate with a small number of process water. In addition, the total processing time can be shortened.

In addition, since the substrate taken out from the polishing apparatus can be cleaned separately from the substrate polished by using ceria without being washed in separate cleaning apparatuses and without drying to the last in the same polishing apparatus, It is possible to remove the ceria more reliably by cleaning the polished substrate which is polished using ceria and which has the ceria attached thereto while suppressing the occurrence of water marks caused by drying.

In addition, the cerium particles have a strong pulling force with respect to the substrate, so that the ceria deposited on the substrate can not be removed simply by cleaning with a cleaning liquid containing an alkaline chemical liquid or a surfactant. . According to the present invention, such ceria can be more reliably removed from the substrate.

1 is a diagram schematically showing an example of a schematic configuration of a substrate processing apparatus.
Fig. 2 is a view showing in detail the cleaning devices 31 to 34 and an example of its associated part.
3 is a flowchart showing an example of the processing operation of the substrate processing apparatus.
4 is a table showing the number of defects in the substrates W1, W3 and W4 after and after the polishing.
Fig. 5A is a table showing the cerium ion concentration (atms / cm < 2 >) in the substrates W1 to W4 after and after polishing.
Fig. 5B is a table showing the cerium ion concentration (atms / cm < 2 >) in the processed substrates W2 to W4.
Fig. 6 is a table showing the sulfur ion concentration (atms / cm < 2 >) in the substrates W1 to W4 after and after the polishing.
7 is a diagram showing the number of defects (the vertical axis on the left side) and the removal rate (the vertical axis on the right side) based on the substrate W11 after the treatment and the substrates W12 and W13 after the treatment .
Fig. 8 is a diagram showing the number of defects and the removal rate in the case where drying was performed after the first APM cleaning and in the case where drying was not performed.
Fig. 9 is a diagram schematically showing a cleaning apparatus installed in a substrate processing apparatus and performing APM cleaning, SPM cleaning, and drying.
Fig. 10A is a diagram showing, in order, a process of performing a process of cleaning a substrate by the cleaning apparatus of Fig. 9; Fig.
Fig. 10B is a view showing, in order, a process of performing the process of cleaning the substrate by the cleaning apparatus of Fig. 9; Fig.
Fig. 10C is a view showing, in order, a process of performing the process of cleaning the substrate by the cleaning apparatus of Fig. 9; Fig.
FIG. 10D is a view showing, in order, a process of performing a process of cleaning a substrate by the cleaning apparatus of FIG. 9;
Fig. 10E is a view showing, in order, a process of performing a process of cleaning the substrate by the cleaning apparatus of Fig. 9; Fig.
Fig. 10F is a view showing, in order, a process of performing the process of cleaning the substrate by the cleaning apparatus of Fig.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 is a diagram schematically showing an example of a schematic configuration of a substrate processing apparatus, and may be considered as a schematic top view of the substrate processing apparatus. The substrate processing apparatus includes a load port 1, one or a plurality of polishing units 2, a plurality of cleaning apparatuses 31 to 33, one or more drying apparatuses 4, 5 to 9), substrate stations 10 and 11, and a control unit 12. Each part other than the load port 1 can be housed in the device 13. [

The load port 1 is disposed adjacent to the short side of the apparatus 13, and a substrate cassette for stocking a substrate such as a semiconductor wafer is loaded.

Polishing section (2) it is juxtaposed along the long side of the device 13, for example, using a slurry containing the ceria (CeO ₂₎ to polish the substrate. The slurry may remain on the polished substrate. It is assumed that the polishing section 2 polishes the surface of the substrate, but it is also possible to polish the bevel of the substrate.

Here, the average particle diameter (D ₅₀ ) of the cerium oxide in the slurry (abrasive) is usually 0.5 to 1.5 탆. The content of cerium oxide is 1 to 10% by mass with respect to the total amount of the substrate abrasive. The cerium oxide abrasive has a characteristic that it is easy to precipitate because of its large specific gravity, although it has superior abrasive characteristics as compared with conventional silica abrasive. It is necessary to adjust the amount and pH of the surfactant to such a range that the polishing rate of the pattern recess is sufficiently small as compared with the polishing rate of the convex portion. Thus, the viscosity is set within the range of 1.0 to 1.4 mPa · s, The polishing rate of the polishing agent after the addition of the surfactant during polishing is adjusted to 5.5 to 9, and the polishing rate of the silicon oxide film And the polishing rate of the silicon nitride film is preferably increased.

The cleaning apparatuses 31 to 33 are juxtaposed along the long side on the opposite side of the polishing unit 2 in the apparatus 13 and clean the substrate after polishing. Further, when the substrate after polishing is dried, it becomes difficult to remove the residue adhered to the substrate. Therefore, the substrate processing apparatus is capable of drying the substrate before being cleaned in the cleaning units 31 to 33 after being polished in the polishing unit 2 It is preferable not to have a mechanism. The cleaning by the cleaning devices 31 to 33 will be described later in detail.

The drying apparatus 4 is disposed adjacent to the cleaning apparatus 33 and dries the substrate after cleaning.

The transfer section 5 has a substrate hand before cleaning and a substrate hand after cleaning and is provided between the load port 1 and the polishing section 2 on the side of the load port 1 and between the drying device 4 And can access the load port 1, the transport section 6, and the drying apparatus 4. [ The transfer section 5 is, for example, a transfer robot. The transfer section 5 receives the substrate before the processing from the load port 1 and transfers it to the transfer section 6. In addition, the carry section 5 takes out the dried substrate from the drying apparatus 4. [

The transfer section 6 is disposed along the polishing section 2 and can access the transfer section 5, the polishing section 2 and the substrate station 10. The transfer section 6 receives the substrate from the transfer section 5 and inserts the substrate into the polishing section 2. [ The carrying section 6 takes out the polished substrate from the polishing section 2 and places it on the substrate station 10 provided between the carrying sections 6 and 7. [

The transfer section 7 is disposed in an area surrounded by the substrate station 10 and the cleaning apparatuses 32 and 33 and is capable of accessing the substrate stations 10 and 11 and the cleaning apparatuses 32 and 33. The carry section 7 is polished to take out the substrate placed on the substrate station 10, and loads the substrate on the substrate station 11. The transfer section 7 also takes out the substrate cleaned by the cleaning device 32 and puts it in the cleaning device 33. [

The transfer section 8 is disposed between the cleaning apparatuses 31 and 32 and is capable of accessing the cleaning apparatuses 31 and 32 and the substrate station 11. The carry section 8 takes out the substrate placed on the substrate station 11 and puts it in the cleaning apparatus 31. [ Further, the carry section 8 takes out the substrate cleaned by the cleaning apparatus 31, and puts it in the cleaning apparatus 32. Further, although the substrate station 11 is disposed in the vicinity of the cleaning apparatus 32, a specific arrangement example will be described later. In addition, a pure water supply nozzle (not shown) for supplying pure water to the substrate may be provided in the substrate station 11 so as not to dry the substrate.

The carry section 9 is disposed between the cleaning apparatus 33 and the drying apparatus 4 and can access them. The transfer section 9 takes out the substrate cleaned by the cleaning device 33 and puts it into the drying device 4. [

The control unit 12 controls each unit in the substrate processing apparatus. For example, the control unit 12 is a processor and controls the operations of the polishing unit 2, the cleaning apparatuses 31 to 33, the drying apparatus 4, and the transport units 5 to 9 by executing a predetermined program do.

The substrate is processed by the substrate processing apparatus as follows. First, the substrate before processing, which is loaded on the load port 1, is transferred to the carry section 6 by the carry section 5. [ The carrying section 6 puts the substrate into one of the polishing sections 2, and the substrate is polished by the polishing section 2. The substrate after polishing is loaded on the substrate station 10 by the carry section 6.

Subsequently, the carry section 7 transfers the substrate loaded on the substrate station 10 to the carry section 8 through the substrate station 11. [ The carry section 8 puts the substrate into the cleaning apparatus 31, and the substrate is cleaned by the cleaning apparatus 31. [ The cleaned substrate is put into the cleaning device 32 by the carry section 8, and the substrate is cleaned by the cleaning device 32. The cleaned substrate is put into the cleaning device 33 by the transport section 7, and the substrate is cleaned by the cleaning device 33.

The cleaned substrate is put into the drying device 4 by the carry section 9, and the substrate is dried by the drying device 4. [ The substrate after drying is taken out by the carry section (5).

The waste liquid of the cleaning liquid is discharged to the outside from the independent piping from each chamber, so that the atmosphere of the other chemical liquid does not come into the chamber.

Fig. 2 is a detailed view showing one example of the cleaning apparatuses 31 to 34 and its associated parts, and may be considered as a schematic front view of the substrate processing apparatus.

For example, two cleaning devices 31 are arranged vertically side by side. The cleaning device 31 has a housing 31a provided with an opening on the carry section 8 side, a shutter 31b capable of opening and closing the opening and a cleaning section 31c housed in the housing 31a. The cleaning section 31c performs cleaning using an ammonia water and a hydrogen peroxide solution as a mixture, and performs APM (Ammonium hydrogen-Peroxide Mixture) cleaning. The cleaning section 31c may be provided only by supplying the mixed liquid to the substrate as the APM cleaning. However, the cleaning section 31c may physically perform cleaning (scrub cleaning) while contacting the cleaning member such as a roll sponge while supplying the mixed liquid. It is preferable that the housing 31a has high resistance to ammonia water and hydrogen peroxide water. Further, it is preferable that an independent exhaust mechanism (not shown) is provided in the housing 31a.

For example, two cleaning devices 32 are arranged vertically side by side. The cleaning device 32 includes a housing 32a provided with openings on the carry section 8 side and the carry section 7 side, a shutter 32b capable of opening and closing these openings, and a cleaning section 32b housed in the housing 32a. (32c). The cleaning section 32c performs cleaning using SPM (sulfuric acid-hydrogen and peroxide mixture) cleaning using a mixed solution of sulfuric acid and hydrogen peroxide water. It is preferable that the housing 32a has high resistance to sulfuric acid or hydrogen peroxide water. It is also preferable that an independent exhaust mechanism (not shown) is provided in the housing 32a. And the substrate station 11 may be provided between the two cleaning apparatuses 32.

For example, two cleaning devices 33 are arranged vertically side by side. The cleaning device 33 includes a housing 33a provided with openings on the carry section 7 side and the carry section 9 side, a shutter 33b capable of opening and closing these openings, and a cleaning section 33b housed in the housing 33a. (33c). The washing section 33c is a washing process using a mixture of ammonia water and hydrogen peroxide water, and performs APM washing. The cleaning section 33c may be provided only by supplying the mixed liquid to the substrate as the APM cleaning, but may be physically cleaned (scrubbed) with a cleaning member such as a pen-type sponge while supplying the mixed liquid, Cleaning may be performed. The housing 33a is preferably made of a material resistant to ammonia water or hydrogen peroxide water, for example, a PVC material. Further, it is preferable that an independent exhaust mechanism (not shown) is provided in the housing 33a.

For example, two drying apparatuses 4 are arranged vertically side by side. The drying apparatus 4 includes a housing 4a provided with openings on the side of the carry section 9 and the carry section 5 (see Fig. 1), a shutter 4b capable of opening and closing these openings, And a drying section 4c accommodated in the drying section 4c. This drying section 4c performs, for example, SRD (Spin Rinse Dry) drying of the substrate. Further, it is preferable that an independent exhaust mechanism (not shown) is provided in the housing 4a.

The carry section 7 is, for example, a carrying robot and has a lower hand 7a and an upper hand 7b. The lower hand 7a carries a substrate having a relatively high degree of contamination, and the upper hand 7b carries a substrate having a relatively low degree of contamination. Specifically, the lower hand 7a is polished by the polishing unit 2 to take out the fine definition substrate loaded on the substrate station 10, and loads the substrate on the substrate station 11. [ The upper hand 7b takes out the substrate cleaned by any one of the cleaning devices 32 and puts it in any one of the cleaning devices 33. [

The carry section 8 is, for example, a carrying robot and has a lower hand 8a and an upper hand 8b. The lower hand 8a carries a substrate having a relatively high degree of contamination, and the upper hand 8b carries a substrate having a relatively low degree of contamination. Specifically, the lower hand 8a takes out the fine-definition substrate placed on the substrate station 11, and puts it into one of the cleaning apparatuses 31. Then, The upper hand 8b takes out the substrate cleaned by any one of the cleaning devices 31 and puts it in any one of the cleaning devices 32. [

The transfer section 9 is, for example, a transfer robot, but it is sufficient if the transfer section 9 has one hand 9a for transferring the substrate on which cleaning has been completed. The hand 9a takes out the substrate cleaned by one of the cleaning devices 33 and puts it in any one of the drying devices 4. [

Also, a high temperature APM source 21, a hydrogen peroxide source 22, a hot sulfuric acid source 23 and a hot pure water source 24 are installed. They may be external to the device 13. The high temperature APM supply source 21 supplies APM of about room temperature to about 80 캜 to the cleaning devices 31 and 33. The hydrogen peroxide supply source 22 supplies the hydrogen peroxide solution at room temperature to the cleaning device 32. The high-temperature sulfuric acid supply source 23 supplies sulfuric acid at about room temperature to about 80 deg. C to the cleaning apparatus 32. [ The high temperature pure water supply source 24 can supply purified water of about 75 to 95 DEG C to the cleaning device 32. [

Alternatively, an external heat source such as an infrared heater may be provided inside each of the cleaning apparatuses 31 to 33, and the inside of the cleaning apparatuses 31 to 33 may be maintained at a high temperature by the supply heat from the outside Sulfuric acid, and pure water supplied from the high temperature APM supply source 21, the high temperature sulfuric acid supply source 23 and the high temperature pure water supply source 24 to the respective cleaning apparatuses 31 to 33 at lower temperatures, for example, The temperature may be about room temperature to about 40 ° C. With such a construction, it is advantageous in terms of the structure of the apparatus because it can be used without securing the chemical resistance of each pipe or pipe joint connected to each of the cleaning devices 31 to 33 from each supply source.

2 is merely an example. The number of the cleaning apparatuses 31 to 33 and the number of the drying apparatuses 4, the positions of the transfer units 7 to 9 and the substrate stations 10 and 11 The configuration may be properly designed. Further, the cleaning sections 31c and 33c perform cleaning using ammonia water, but they may be cleaned using other basic (alkaline) chemical liquid and hydrogen peroxide solution.

3 is a flowchart showing an example of the processing operation of the substrate processing apparatus. First, the polishing section 2 polishes the substrate (step S1). When a slurry containing ceria is used at the time of polishing the substrate, ceria may remain on the polished substrate. More specifically, cerium ions having a cerium concentration of 1.0 10 ¹⁰ atms / cm 2 or more may adhere to the surface and / or the backside of the substrate, and such a substrate is washed.

Subsequently, the carry sections 6 to 9 put the substrate into any one of the cleaning apparatuses 31 without drying the substrate after the polishing (step S2). More specifically, the carry section 6 takes out the substrate from the polishing section 2 and loads the substrate on the substrate station 10. Thereafter, the lower hand 7a of the carry section 7 takes out the substrate from the substrate station 10, and loads it on the substrate station 11. Then, Subsequently, the lower hand 8a of the carry section 8 takes out the substrate from the substrate station 11, and at the same time, the shutter 31b of the cleaning apparatus 31 is opened, and the substrate is moved to the housing 31a To the cleaning portion 31c. Thereafter, the shutter 31b is closed.

In order to prevent drying of the substrate, it is preferable to put a liquid shower such as pure water on the substrate during transport of the substrate by the transport units 6 to 8 or at the substrate station 10. [ Particularly, since the time required for the substrate to stay on the transfer sections 6 and 7 or the substrate station 10 is long, the substrate on the substrate transferring stage 6 or 7 and the substrate on the substrate station 10 are showered It is effective to provide a liquid supply mechanism (not shown) for pouring. On the other hand, when the residence time of the substrate such as the carry section 8 is short, it may be omitted.

The cleaning device 31 discharges the APM from the spray nozzle to clean the substrate (step S3). In the meantime, the shutter 31b in the cleaning device 31 is closed. Thus, the APM used in the cleaning apparatus 31 can be prevented from being mixed with other apparatus, particularly, the cleaning apparatus 32 and the drying apparatus 4. [ This APM cleaning is rough cleaning and can be omitted depending on the case. However, when there are particles that are difficult to remove, the APM cleaning can be performed using a roll or pencil cleaning or a two fluid jet.

When the cleaning by the cleaning device 31 is completed, the carrying unit 8 conveys the substrate from any of the cleaning devices 31 to any one of the cleaning devices 32. More specifically, when the cleaning is completed, the shutter 31b of the cleaning device 31 is opened, the upper hand 8b of the carry section 8 receives the substrate, and then the shutter 31b Is closed. The shutter 32b on the carry section 8 side of the cleaning apparatus 32 is opened and transferred to the cleaning section 32c through the opening of the housing 32a and then the shutter 32b is closed .

Then, the cleaning device 32 discharges the SPM from the spray nozzle to clean the substrate (step S4). In the meantime, the shutter 32b in the cleaning device 32 is closed. This makes it possible to inhibit the SPM used in the cleaning apparatus 32 from being mixed with other apparatuses, particularly the cleaning apparatuses 31, 33 and the drying apparatus 4. [ By SPM cleaning, residues such as ceria and organic substances contained in the particles and the slurry are dissolved, and most of the residues can be removed. Particularly, it is possible to effectively remove the residue by transporting the substrate after the polishing so as not to be dried.

Further, it is preferable that the cleaning apparatus 32 performs cleaning of the substrate by using pure water after SPM cleaning so that sulfuric acid does not come out from the housing 32a of the cleaning apparatus 32. [ In this case, however, the sulfuric acid-derived sulfur component may remain on the substrate after the SPM cleaning.

When the cleaning by the cleaning device 32 is completed, the carrying unit 7 conveys the substrate from any of the cleaning devices 32 to any one of the cleaning devices 33. More specifically, when the cleaning is completed, the shutter 32b on the carry section 7 side of the cleaning apparatus 32 is opened, and the upper hand 7b of the carry section 7 receives the substrate , And then the shutter 32b is closed. The shutter 33b on the carry section 7 side of the cleaning apparatus 33 is opened and transferred to the cleaning section 33c through the opening of the housing 33a and then the shutter 33b is closed .

Then, the cleaning device 33 discharges the APM from the spray nozzle to clean the substrate (step S5). In the meantime, the shutter 33b in the cleaning device 33 is closed. Thus, the APM used in the cleaning device 33 can be prevented from being mixed with other devices, particularly, the cleaning device 32 and the drying device 4. [ Most of the sulfur component can be removed by APM cleaning.

When the cleaning by the cleaning device 33 is completed, the carrying unit 9 conveys the substrate from the cleaning device 33 to any one of the drying devices 4. More specifically, when the cleaning is completed, the shutter 33b on the carry section 9 side of the cleaning apparatus 33 is opened, and the hand 9a in the carry section 9 receives the substrate , And then the shutter 33b is closed. Then, the shutter 4b in the drying device 4 is opened and is delivered to the drying section 4c through the opening of the housing 4a, and then the shutter 4b is closed.

Then, the drying apparatus 4 dries the substrate (step S6). When the drying by the drying apparatus 4 is completed, the carry section 5 takes out the substrate from the drying apparatus 4. [ More specifically, when the drying is completed, the shutter 4b on the carry section 5 side of the drying apparatus 4 is opened and the substrate hand after cleaning in the carry section 5 picks up the substrate And then the shutter 4b is closed.

As described above, in the present embodiment, the SPM cleaning is performed in the substrate processing apparatus, and the APM cleaning is performed subsequently, whereby the substrate can be efficiently cleaned by a small number of steps and the total processing time can be shortened. In other words, by providing the polishing unit 2 and the cleaning units 32 and 33 in the substrate processing apparatus, the substrate after polishing can be cleaned with SPM without drying, and the residues such as ceria contained in the slurry can be sufficiently removed . Further, by carrying out the APM cleaning after the SPM cleaning, the sulfur component due to the sulfuric acid used in the SPM cleaning can be removed. The cleaning section 32c for housing the cleaning section 32c in the housing 32a and the cleaning sections 31c and 33c for cleaning the APM are housed in the housings 31a and 33a, 33c can be made independent from each other. For example, the sulfur component of SPM rarely moves to another processing chamber.

[Experiment 1]

In order to confirm that it is effective to perform APM cleaning after the SPM cleaning, the following processing was performed on the four substrates W1 to W4.

(1) Substrate W1

The surface of the substrate W1 was polished with a ceria-containing slurry at a pressure of about 70 hPa for 60 seconds. Subsequently, while supplying pure water, physical cleaning was performed for 60 seconds using a roll-type sponge. As described above, the substrate W1 is not subjected to the SPM cleaning or the APM cleaning after polishing.

(2) The substrate W2

A mixed solution of sulfuric acid (concentration 96%, high temperature) and aqueous hydrogen peroxide (concentration 30%, room temperature) was supplied for 60 seconds while rotating the substrate W2 to heat the substrate W2 Respectively. Thus, the substrate W2 was only subjected to SPM cleaning after polishing.

(3) Substrate W3

After the same process as in (2) above, the substrate W3 was cleaned by supplying the mixture of ammonia water, hydrogen peroxide solution and pure water for 30 seconds while rotating the substrate W3. As described above, the substrate W3 was subjected to SPM cleaning and subsequent APM cleaning after polishing.

(4) Substrate W4

After the same process as in the above (1), the substrate W4 was cleaned by supplying the mixture of ammonia water, hydrogen peroxide solution and pure water for 60 seconds while rotating the substrate W4. Thus, the substrate W4 was subjected to APM cleaning only after polishing.

4 is a table showing the number of defects in the substrates W1, W3 and W4 after and after the polishing. As shown in the figure, there were defects of about 8,000 to 10,000 on the polished substrates W1, W3 and W4. In the substrate W4 subjected to only the APM cleaning, the number of defects after the treatment is about 8,500, and the defects are only reduced by about 6%. On the other hand, in the substrate W3 subjected to the SPM cleaning and the APM cleaning, the number of defects after the treatment was about 2,500 and the defects of about 75% could be reduced.

Fig. 5A is a table showing the cerium ion concentration (atms / cm < 2 >) in the substrates W1 to W4 after and after polishing. 5A shows five points of coordinates (0,0), (0,120), (120,0), (0,120) and (-120,0) in each of the substrates W1 to W4 (Total Reflection X-ray Fluorescence) method.

The cerium ion concentration of the polished substrate W1 was about 8 * 10 ¹¹ [atms / cm 2]. In the substrate (W4) subjected only APM cleaning whereas cerium ion concentration was 3 × 10 ¹⁰ degree [atms / ㎠], the detection limit (2 * 10 ^10, the substrate (W2, W3) subjected to SPM cleaning [atms / ㎠] ).

Fig. 5B is a table showing the cerium ion concentration (atms / cm < 2 >) in the processed substrates W2 to W4. FIG. 5B shows the results of measurement by the ICP-MS (Inductively Coupled Plasma Mass Spectrometry) method. In the measurement by the ICP-MS method, on the substrate W4 subjected to the APM cleaning only, the cerium ion concentration was about 5.7 * 10 ¹⁰ [atms / cm2], whereas on the substrates W2 and W3 subjected to the SPM cleaning, (5 * 10 ⁹ [atms / cm 2]).

Thus, it can be seen that SPM cleaning is effective for removing cerium ions.

Fig. 6 is a table showing the sulfur ion concentration (atms / cm < 2 >) in the substrates W1 to W4 after and after the polishing. Fig. 6 shows five points of coordinates (0,0), (0,120), (120,0), (0,120), and (-120,0) in the substrates W1- (Total Reflection X-ray Fluorescence) method.

The sulfur ion concentration of the substrate W1 after polishing was about 5.0 * 10 ¹² [atms / cm 2], but the sulfur ion concentration was raised to 3.6 * 10 ¹³ [atms / cm 2] in the substrate W2 subjected to only the SPM cleaning. And the substrate W4 on which the SPM cleaning is not performed was about 4.6 * 10 ¹² [atms / cm 2]. Therefore, it is considered that the sulfur ions attributed to the sulfuric acid used for the SPM cleaning remain on the substrate W2. In the substrate W3 subjected to the APM cleaning after the SPM cleaning, the sulfur ion concentration could be reduced to about 6.4 × 10 ¹² [atms / cm 2].

As described above, it is found that APM cleaning is effective for removing sulfur ions caused by SPM cleaning.

From the above, it was confirmed that the cerium ion contained in the slurry can be removed by SPM cleaning, and the sulfur ions by SPM cleaning can be removed by APM cleaning.

Further, in the above (2), it is confirmed by another experiment that the number of defects is not reduced so much in cleaning using only sulfuric acid instead of SPM cleaning. It can be confirmed from other experiments that there is no significant difference in the case of supplying the mixture of ammonia water, hydrogen peroxide solution and pure water for 30 seconds and for 60 seconds in (2) above.

[Experiment 2]

The following processing was performed on the three substrates W11 to W13 in order to confirm that the APM cleaning was performed first and that the subsequent SPM cleaning and APM cleaning were more effective.

(1) Substrate W11

Using the slurry containing ceria, the surface of the substrate W11 was polished for 60 seconds at an average pressure of about 70 hPa. Subsequently, while supplying a mixture of ammonia water, hydrogen peroxide solution and pure water, physical cleaning was performed for 60 seconds using a roll type sponge. Thus, the substrate W11 was subjected to APM cleaning only after polishing.

(2) Substrate W12

The surface of the substrate W12 was polished with a ceria-containing slurry at a pressure of about 70 hPa for 60 seconds. Subsequently, while the substrate W12 was rotated at the number of revolutions of 50 rpm, a mixed solution of sulfuric acid (concentration 96%, high temperature) and hydrogen peroxide solution (concentration 30%, room temperature) was supplied for 60 seconds to clean the substrate W12. Thereafter, while rotating the substrate W12, a mixture of ammonia water, hydrogen peroxide solution and pure water was supplied for 60 seconds to clean the substrate W12. Thus, the substrate W12 was subjected to SPM cleaning and subsequent APM cleaning after polishing.

(3) Substrate W13

Using the slurry containing ceria, the surface of the substrate W13 was polished for 60 seconds at an average pressure of about 70 hPa. Subsequently, while supplying a mixture of ammonia water, hydrogen peroxide solution and pure water, physical cleaning was performed for 60 seconds using a roll type sponge. Thereafter, while the substrate W13 was being rotated, a mixed liquid of sulfuric acid (concentration 96%, high temperature) and hydrogen peroxide solution (concentration 30%, room temperature) was supplied for 60 seconds to clean the substrate W13. Thereafter, while rotating the substrate W13, a mixture of ammonia water, hydrogen peroxide solution and pure water was supplied for 60 seconds to clean the substrate W13. Thus, the substrate W13 was subjected to APM cleaning after polishing, followed by SPM cleaning, and then to APM cleaning.

Fig. 7 is a diagram showing the number of defects (bar graph, vertical axis on the left) and removal rate (solid line, vertical axis on the right) with reference to the substrate W11 in the processed substrates W11 to W13. As shown in the substrate W12 in FIG. 7, by performing SPM cleaning and APM cleaning after polishing, a defect of about 67% can be removed. On the other hand, as shown in the substrate W13 of FIG. 7, by performing the APM cleaning, the SPM cleaning, and the APM cleaning after the polishing, the defect of about 92% can be removed and the removal rate can be improved.

From the above, it was confirmed that it is more effective to carry out the APM cleaning first, and then perform the SPM cleaning and the APM cleaning sequentially.

Fig. 8 is a diagram showing the number of defects and the removal rate in the case where drying was first performed after APM cleaning and in the case where drying was not performed. (1) cleaning in the order of (1) APM cleaning treatment, drying, SPM cleaning treatment and APM cleaning treatment in this order (bar graph, vertical axis on the left side) and (2) APM cleaning treatment, SPM cleaning treatment and APM cleaning treatment And a case (bar graph, vertical axis on the right). Compared with the case of (1) cleaning in the order of APM cleaning treatment, drying, SPM cleaning treatment and APM cleaning treatment, (2) cleaning in the order of APM cleaning treatment, SPM cleaning treatment and APM cleaning treatment, The number of defects is small, and the removal rate is high. That is, in FIG. 8, compared with the case where drying is performed, the case where the APM cleaning, the SPM cleaning, and the APM cleaning are continuously performed without drying, that is, after CMP, I could confirm.

The cerium-containing ceria has a strong pulling force with respect to the substrate electrically, so that it is difficult to remove the cerium-containing ceria by cleaning with a cleaning liquid containing an alkaline chemical liquid or a surfactant, but the cleaning ability is improved by the cleaning described above.

Although the above-described embodiment is provided to separate the cleaning devices 31 and 33 for performing the APM cleaning, the cleaning device 32 for performing the SPM cleaning, and the drying device 4 separately, the APM cleaning, the SPM cleaning, and the drying Any two or more processes may be performed in one apparatus. The following embodiment shows an example in which APM cleaning, SPM cleaning and drying are performed in one apparatus.

Fig. 9 is a diagram schematically showing a cleaning device installed in the substrate processing apparatus to perform APM cleaning, SPM cleaning, and drying. The cleaning apparatus includes a chuck (not shown), an arm 51, a cleaning tank washing shower 52, and a cleaning tank 53 for containing the chuck (not shown).

The chuck holds and rotates the substrate periphery to be cleaned.

Specifically, the arm 51 is movable between a cleaning position where the tip of the arm 51 is located above the substrate and a retreat position away from the substrate above. A downwardly directed APM supply nozzle 61, a pure water supply nozzle 62, an H ₂ O ₂ supply nozzle 63 and an SPM supply nozzle 64 are provided below the tip of the arm 51. One end of the arm 51 is connected to an APM supply source (not shown), and the other end of the arm 51 is connected to the APM supply nozzle 61. The other supply nozzles are connected to the same pipes 72 to 74. [ In Fig. 9, although APM or the like is depicted as being supplied only from above the substrate, APM or the like may be supplied from the lower side of the substrate by providing a supply nozzle on the lower side.

The washing tank washing shower 52 is installed inside the washing tub 53 and supplies cleansing water (pure water or the like) to the inside of the washing tub 53 to clean the inside of the washing tub 53. The cleaning tank 53 is provided with an opening (not shown) that can open and close the substrate for loading and unloading the substrate.

Figs. 10A to 10F are views sequentially showing the process of cleaning the substrate by the cleaning apparatus of Fig. 9 (all the piping 71 to 74 are omitted). Further, prior to the treatment in the cleaning apparatus, the substrate is polished in the substrate processing apparatus using the slurry containing ceria. Preferably, the substrate is transported into the cleaning apparatus without drying the substrate, Respectively. Then, the arm 51 in the retracted position moves to the cleaning position.

First, as shown in Fig. 10A, the SPM is supplied from the SPM supply nozzle 64 to the substrate. As a result, the slurry adhering to the substrate and the organic residues generated during polishing are removed (melted). At this time, the substrate may be heated from an external heat source. By supplying the heat from the external heat source onto the substrate in this way, the residue can be more reliably removed from the substrate.

Subsequently, as shown in Fig. 10B, the hydrogen peroxide solution is supplied from the H ₂ O ₂ supply nozzle 63 to the substrate. Thereby, the sulfuric acid in the SPM is removed from the substrate.

Then, pure water or hot water is supplied to the substrate from the pure water supply nozzle 62 as shown in Fig. 10C. Thereby, the substrate is rinsed and the chemical liquid component is washed. At this time, the washing water is also supplied into the washing tub 53 from the washing tub washing shower 52. Thereby, the SPM and the hydrogen peroxide solution scattered in the washing tub 53 are also removed.

Subsequently, as shown in Fig. 10D, the APM is supplied from the APM supply nozzle 61 to the substrate. As a result, the particles that could not be removed by the SPM cleaning are removed. At this time, it is preferable to use a mechanism capable of treating two fluids such as liquid and gas. At this time, the substrate may be heated from an external heat source. By supplying the heat from the external heat source onto the substrate in this way, the residue can be more reliably removed from the substrate. Further, as shown in Fig. 10C, by washing the inside of the cleaning bath 53, the reaction between sulfuric acid in SPM and ammonia in APM can be suppressed.

Subsequently, pure water or hot water is supplied to the substrate from the pure water supply nozzle 62, as shown in Fig. 10E. Thereby, the substrate is finally rinsed, and the chemical liquid component is removed.

Next, as shown in Fig. 10F, spin drying is performed while rotating the substrate, and then the dried substrate is taken out of the housing.

9 shows an example in which the APM supply nozzle 61, the pure water supply nozzle 62, the H ₂ O ₂ supply nozzle 63 and the SPM supply nozzle 64 are provided in one arm 51 , The arrangement of the nozzles can be considered in various ways. For example, the pure water supply nozzle and the H ₂ O ₂ supply nozzle may be supplied from the fixed nozzle. Further, the substrate may be roughly cleaned prior to the SPM cleaning shown in Fig. 10A. The crude cleaning may be, for example, APM cleaning, or may be a two-fluid jet cleaning which supplies a jet of gas and liquid. Alternatively, the roughing roll may be roll cleaning in which the rotating roll sponge is brought into contact with the substrate.

The above-described embodiments are described for the purpose of enabling a person having ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments will be apparent to those skilled in the art, and the technical spirit of the present invention may be applied to other embodiments. Therefore, the present invention should not be limited to the embodiments described, but should be the widest range according to the technical idea defined by the claims.

1: Load port
2:
31 to 33: Cleaning device
31a, 32a, 33a: housing
31b, 32b, 33b:
31c, 32c and 33c:
4: Drying device
4a: Housing
4b: Shutter
4c:
5 to 9:
10, 11: substrate station
12:
13: Device
21: High temperature APM source
22: hydrogen peroxide source
23: High temperature sulfuric acid source
24: High temperature pure water source
51: arm
52: Cleaning shower
53: washing machine
61: APM feed nozzle
62: Pure water supply nozzle
63: H ₂ O ₂ feed nozzle
64: SPM feed nozzle
71 to 74: Piping

Claims (18)

A polishing unit for polishing the substrate using the polishing liquid,
A first cleaning part for cleaning the polished substrate in the polishing part by using sulfuric acid and hydrogen peroxide solution,
A second cleaning unit for cleaning the substrate cleaned by the first cleaning unit using a basic chemical solution and hydrogen peroxide solution,
And a drying unit for drying the substrate cleaned by the second cleaning unit. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has no mechanism for drying the substrate after being polished by the polishing section and before being cleaned by the first cleaning section. The substrate processing apparatus according to claim 1 or 2, further comprising a transfer section for transferring the substrate polished by the polishing section to the first cleaning section without drying. The substrate processing apparatus according to claim 3, further comprising: a first liquid supply mechanism for putting a liquid on a substrate being carried by said carry section. The substrate processing apparatus according to claim 1 or 2, further comprising: a substrate station on which the substrate before being polished by the polishing section and before being cleaned by the first cleaning section is loaded;
And a second liquid supply mechanism for putting liquid on the substrate loaded on the substrate station. The image forming apparatus according to claim 1 or 2, wherein the first cleaner unit is housed in a first housing provided with a first shutter that can be opened and closed,
The second cleaning part is housed in a second housing provided with a second shutter that can be opened and closed,
Wherein the drying unit is housed in a third housing provided with a third shutter that can be opened and closed. The polishing apparatus according to any one of claims 1 to 3, further comprising a third cleaning section for cleaning the substrate polished by the polishing section by using a basic chemical solution and hydrogen peroxide solution,
And the first cleaning section cleans the substrate cleaned by the third cleaning section. 8. The substrate processing apparatus according to claim 7, wherein the third cleaning section cleans the cleaning member by contacting the cleaning member with the substrate while supplying a basic chemical solution and hydrogen peroxide solution to the substrate. The substrate processing apparatus according to claim 1 or 2, wherein the second cleaning section performs cleaning of the substrate using a basic chemical solution and hydrogen peroxide solution, and then performs two-fluid jet cleaning. The substrate processing apparatus according to claim 1 or 2, wherein the polishing section polishes the substrate using a polishing liquid containing ceria. A polishing step of polishing the substrate with a polishing liquid by a polishing section in the substrate processing apparatus;
A first cleaning step of cleaning the substrate with sulfuric acid and hydrogen peroxide solution by a first cleaning part of the substrate processing apparatus;
A second cleaning step of cleaning the substrate with a basic chemical liquid and hydrogen peroxide solution by a second cleaning unit in the substrate processing apparatus,
And a drying step of drying the substrate by a drying unit in the substrate processing apparatus. The substrate processing method according to claim 11, comprising a transporting step of transporting the substrate from the polishing section to the first cleaning section without drying the polished substrate after the polishing step. A first cleaning step of cleaning the substrate to which cerium ions are attached using sulfuric acid and hydrogen peroxide water,
A second cleaning step of cleaning the substrate using a basic chemical liquid and hydrogen peroxide water,
And then drying the substrate. 14. The method of claim 13, wherein the first cleaning step, the cerium concentration is washed 1.0 × ¹⁰ 10 atms / ㎠ than the cerium ions are attached to the substrate,
Wherein the cerium concentration of the substrate subjected to the drying step is lower than the detection limit in the measurement by the ICP-MS method. The substrate processing method according to claim 13 or 14, wherein the substrate is heated in the first cleaning step and / or the second cleaning step. 15. The method according to claim 13 or 14, wherein, before the first cleaning step,
A step of supplying a basic chemical solution and hydrogen peroxide water,
Contacting the rotating sponge member, and
Process of supplying gas and liquid jet
And at least one of the processes. 15. The method according to claim 13 or 14, wherein the first cleaning step, the second cleaning step, and the drying step are performed in a cleaning tank,
A step of cleaning the inside of the cleaning tank between the first cleaning step and the second cleaning step,
And a step of cleaning the inside of the cleaning bath between the second cleaning step and the drying step. 15. The method according to claim 13 or 14, further comprising a polishing step of polishing the substrate using a slurry containing cerium ions before the first cleaning step,
Wherein the substrate after polishing is not dried between the polishing step and the polishing step.

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