JPH0922885A - Method for cleaning substrate after chemical and mechanical polishing - Google Patents
Method for cleaning substrate after chemical and mechanical polishingInfo
- Publication number
- JPH0922885A JPH0922885A JP7171686A JP17168695A JPH0922885A JP H0922885 A JPH0922885 A JP H0922885A JP 7171686 A JP7171686 A JP 7171686A JP 17168695 A JP17168695 A JP 17168695A JP H0922885 A JPH0922885 A JP H0922885A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polishing
- particles
- solution
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路装置の
製造工程で用いられる化学的機械研磨後の基板洗浄方法
に関する。近年の半導体集積回路装置の高集積化に伴
い、回路中の配線数が増大し、配線層を多層化すること
が必要になった。ところが、配線層を多層化すると、配
線部の段差が配線層数を増やすに従って増大し、配線の
段切れや、フォトリソ工程における焦点深度以上の段差
が生じ、半導体集積回路装置の製造が困難になる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a substrate after chemical mechanical polishing used in a manufacturing process of a semiconductor integrated circuit device. With the recent increase in the degree of integration of semiconductor integrated circuit devices, the number of wires in the circuit has increased, and it has become necessary to make the wiring layers multi-layered. However, when the number of wiring layers is increased, the step difference of the wiring portion increases as the number of wiring layers increases, and a step break of the wiring or a step more than the depth of focus in the photolithography process occurs, which makes it difficult to manufacture a semiconductor integrated circuit device. .
【０００２】従来、この段差を無くし平坦化する工程と
してＳＯＧ（ｓｐｉｎ−ｏｎ−ｇｌａｓｓ）を層間絶縁
膜に用いた平坦化や、高濃度ＢＰＳＧ（ｂｏｒｏ−ｐｈ
ｏｓｐｈｏ ｓｏｌｉｃａｔｅ ｇｌａｓｓ）を層間絶
縁膜として堆積した後、高温でリフローを行う平坦化が
用いられてきた。Conventionally, as a step of eliminating this step and planarizing, planarization using SOG (spin-on-glass) as an interlayer insulating film and high-concentration BPSG (boro-ph) are performed.
A planarization method has been used in which ospho silicate glass is deposited as an interlayer insulating film and then reflow is performed at a high temperature.
【０００３】しかしながら、これらの平坦化工程も、
０．３５μｍ以下のＣＭＯＳ装置において使用すること
はほとんど不可能である。そのため、化学的機械研磨技
術を用いて平坦化することが注目されている。化学的機
械研磨技術を用いると層間絶縁膜表面の平坦化を完全に
行うことができ、層間絶縁膜表面の段差を０にすること
ができる。However, these flattening steps also
It is almost impossible to use in CMOS devices below 0.35 μm. Therefore, attention is paid to planarization using a chemical mechanical polishing technique. By using the chemical mechanical polishing technique, the surface of the interlayer insulating film can be completely flattened and the step difference on the surface of the interlayer insulating film can be made zero.
【０００４】しかし、現在、化学的機械研磨に用いてい
る研磨剤にはコロイダルシリカやＫＯＨが含有されてお
り、研磨工程において基板に付着した汚染物を完全に除
去することが必要である。また、最近では、研磨粒子と
してシリカ以外の粒子、ＺｒＯ2 やＣｅＯ2 等の被研磨
物である酸化膜との反応性の高い研磨粒子を用いて研磨
速度を高めることも検討されている。However, the polishing agents currently used for chemical mechanical polishing contain colloidal silica and KOH, and it is necessary to completely remove the contaminants attached to the substrate in the polishing process. Further, recently, it has been considered to use particles other than silica as polishing particles, and polishing particles having high reactivity with an oxide film which is an object to be polished such as ZrO 2 and CeO 2 to increase the polishing rate.
【０００５】[0005]
【従来の技術】従来から、層間絶縁膜の平坦化工程とし
ての化学的機械研磨後の基板洗浄方法として様々な方法
が提案されてきた。最も汎用性の高いものとしては、半
導体製造工程でよく使われるＲＣＡ洗浄があげられる。
このＲＣＡ洗浄は、アンモニアと過酸化水素水と水の混
合液による洗浄工程と、塩酸と過酸化水素水と水の混合
液による洗浄工程からなるものである。2. Description of the Related Art Conventionally, various methods have been proposed as a method for cleaning a substrate after chemical mechanical polishing as a step of flattening an interlayer insulating film. The most versatile one is RCA cleaning, which is often used in the semiconductor manufacturing process.
This RCA cleaning includes a cleaning step with a mixed solution of ammonia, hydrogen peroxide and water, and a cleaning step with a mixed solution of hydrochloric acid, hydrogen peroxide and water.
【０００６】また、希フッ酸溶液での層間絶縁膜表面の
エッチングや、アルカリ系研磨剤を用いる際、酸洗浄を
行う方法等も提案されている。化学的機械研磨工程の後
処理として現在最も多く使用されているのは、ブラシス
クラブ洗浄後、アンモニア：過酸化水素：水（１：１：
５）のアルカリ性洗浄液によるＳＣ１洗浄を行い、基板
表面に研磨工程で付着した粒子の除去を行うというもの
である。Further, a method of etching the surface of the interlayer insulating film with a dilute hydrofluoric acid solution, or a method of performing acid cleaning when using an alkaline abrasive has been proposed. The most commonly used post-treatment of the chemical mechanical polishing process is ammonia: hydrogen peroxide: water (1: 1 :) after brush scrub cleaning.
5) SC1 cleaning with the alkaline cleaning solution is performed to remove particles adhering to the substrate surface in the polishing step.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、この洗
浄方法は研磨液中の研磨粒子がＳｉＯ2 の場合は有効で
あるが、研磨粒子がＺｒＯ2 やＣｅＯ2 のような被研磨
物である酸化膜との反応性が高いものである場合には、
研磨粒子が被研磨物の酸化膜表面と反応してしまうため
充分な除去作用が得られなかった。本発明は、研磨粒子
がＺｒＯ2 やＣｅＯ2 のような被研磨物である酸化膜と
の反応性の高いものである場合でも付着した粒子を完全
に除去することができる洗浄方法を提供することを目的
とするものである。However, this cleaning method is effective when the polishing particles in the polishing liquid are SiO 2 , but the polishing particles are oxide films such as ZrO 2 and CeO 2 to be polished. If it is highly reactive with
Since the abrasive particles react with the surface of the oxide film of the object to be polished, a sufficient removing action cannot be obtained. The present invention provides a cleaning method capable of completely removing adhered particles even when the abrasive particles are highly reactive with an oxide film which is an object to be polished such as ZrO 2 and CeO 2. The purpose is.
【０００８】[0008]
【課題を解決するための手段】本発明にかかる化学的機
械研磨後の基板洗浄方法においては、前記の課題を解決
するため、基板に化学的機械研磨工程を施した後、該基
板を研磨液中の研磨粒子のコロイド状態が不安定になり
凝集を起こす溶液中に浸漬する工程と、次いで該基板に
スクラブ洗浄を施す工程を採用した。また、このスクラ
ブ洗浄に続いて、該基板をアンモニア−過酸化水素水−
水によって洗浄を施し、次いで該基板を乾燥することが
できる。In the method for cleaning a substrate after chemical mechanical polishing according to the present invention, in order to solve the above-mentioned problems, a chemical mechanical polishing step is performed on the substrate, and then the substrate is polished with a polishing liquid. A step of immersing the abrasive particles in a solution in which the colloidal state of the abrasive particles becomes unstable and causes agglomeration, and then a step of scrubbing the substrate are adopted. In addition, following this scrub cleaning, the substrate is treated with ammonia-hydrogen peroxide solution-
The substrate can be washed with water and then dried.
【０００９】この場合、化学的機械研磨工程を、研磨剤
による研磨工程と純水による研磨工程、あるいは、純水
による水洗工程とすることができる。In this case, the chemical mechanical polishing step can be a polishing step with an abrasive and a polishing step with pure water, or a washing step with pure water.
【００１０】また、これらの場合、研磨液中の研磨粒子
のコロイド状態を維持することが不安定になり凝集を起
こす溶液を、基板の表面に付着した研磨液中の研磨粒子
のゼータポテンシャルをプラスからマイナスに、もしく
は、マイナスからプラスに変化させる溶液とすることが
できる。このゼータポテンシャルは、液体中に物質を入
れた状態で、液体表面にすべりが生じた際に発生する液
体と物質との電位差である。また、これらの場合、スク
ラブ洗浄が、ブラシスクラブ洗浄とすることができる。Further, in these cases, the solution that causes the aggregation of the polishing particles in the polishing liquid to become unstable and causes aggregation is added to the zeta potential of the polishing particles in the polishing liquid attached to the surface of the substrate. It can be a solution that changes from minus to minus or from minus to plus. This zeta potential is a potential difference between a liquid and a substance that is generated when a slip occurs on the surface of the liquid in a state where the substance is put in the liquid. Further, in these cases, the scrub cleaning can be brush scrub cleaning.
【００１１】また、これらの場合、基板の表面に付着し
た研磨液中の研磨粒子のゼータポテンシャルをプラスか
らマイナスに、もしくは、マイナスからプラスに変化さ
せる溶液を、研磨粒子に対して酸化作用をもつ溶液とす
ることができる。Further, in these cases, a solution that changes the zeta potential of the polishing particles in the polishing liquid adhering to the surface of the substrate from plus to minus or from minus to plus has an oxidizing effect on the polishing particles. It can be a solution.
【００１２】また、これらの場合、スクラブ洗浄が、ブ
ラシスクラブ洗浄であり、基板の表面に付着した研磨液
中の研磨粒子のゼータポテンシャルをプラスからマイナ
スに、もしくは、マイナスからプラスに変化させる溶液
を、研磨粒子に対して酸化作用をもつ溶液とすることが
できる。Further, in these cases, the scrub cleaning is brush scrub cleaning, and a solution for changing the zeta potential of the polishing particles in the polishing liquid adhering to the surface of the substrate from plus to minus or from minus to plus is used. A solution having an oxidizing effect on the abrasive particles can be prepared.
【００１３】また、これらの場合、ＺｒＯ2 を研磨粒子
とするアルカリ性の研磨剤を用いて酸化膜に化学的機械
研磨工程を施した後の洗浄工程として、基板の表面に付
着した研磨液中の研磨粒子のゼータポテンシャルをプラ
スからマイナスに、もしくは、マイナスからプラスに変
化させる溶液を酸性溶液とすることができる。Further, in these cases, as a cleaning step after the chemical mechanical polishing step is performed on the oxide film by using an alkaline polishing agent containing ZrO 2 as polishing particles, the polishing solution in the polishing liquid adhered to the surface of the substrate is used. A solution that changes the zeta potential of the abrasive particles from plus to minus or from minus to plus can be an acidic solution.
【００１４】また、これらの場合、ＣｅＯ2 を研磨粒子
とするアルカリ性の研磨剤を用いて酸化膜に化学的機械
研磨工程を施した後の洗浄工程として、基板の表面に付
着した研磨液中の研磨粒子のゼータポテンシャルをプラ
スからマイナスに、もしくは、マイナスからプラスに変
化させる溶液を酸性溶液とすることができる。Further, in these cases, as a cleaning step after the chemical mechanical polishing step is performed on the oxide film by using an alkaline abrasive containing CeO 2 as abrasive particles, the polishing liquid in the polishing liquid adhered to the surface of the substrate is used. A solution that changes the zeta potential of the abrasive particles from plus to minus or from minus to plus can be an acidic solution.
【００１５】また、これらの場合、ＺｒＯ2 を研磨粒子
とする酸性の研磨剤を用いて酸化膜に化学的機械研磨工
程を施した後の洗浄工程として、基板の表面に付着した
研磨液中の研磨粒子のゼータポテンシャルをプラスから
マイナスに、もしくは、マイナスからプラスに変化させ
る溶液をアルカリ性溶液とすることができる。Further, in these cases, as a cleaning step after the chemical mechanical polishing step is performed on the oxide film by using an acidic polishing agent containing ZrO 2 as polishing particles, the polishing liquid in the polishing liquid attached to the surface of the substrate is used as a cleaning step. A solution that changes the zeta potential of the abrasive particles from plus to minus or from minus to plus can be an alkaline solution.
【００１６】また、これらの場合、ＣｅＯ2 を研磨粒子
とする酸性の研磨剤を用いて酸化膜に化学的機械研磨工
程を施した後の洗浄工程として、基板の表面に付着した
研磨液中の研磨粒子のゼータポテンシャルをプラスから
マイナスに、もしくは、マイナスからプラスに変化させ
る溶液をアルカリ性溶液とすることができる。Further, in these cases, as a cleaning step after the chemical mechanical polishing step is performed on the oxide film by using an acidic polishing agent containing CeO 2 as polishing particles, the polishing solution in the polishing liquid adhered to the surface of the substrate is used. A solution that changes the zeta potential of the abrasive particles from plus to minus or from minus to plus can be an alkaline solution.
【００１７】また、これらの場合、酸性溶液を、硫酸過
酸化水素水、塩酸過酸化水素水とし、アルカリ性溶液
を、アンモニア過酸化水素水とすることができる。In these cases, the acidic solution may be sulfuric acid hydrogen peroxide solution or hydrochloric acid hydrogen peroxide solution, and the alkaline solution may be ammonia hydrogen peroxide solution.
【００１８】[0018]
【作用】図１は、本発明の化学的機械研磨後のウェハ洗
浄方法の原理説明図である。この原理説明図によって、
本発明の化学的機械研磨後のウェハ（基板）洗浄方法の
原理を説明する。FIG. 1 is a diagram for explaining the principle of the wafer cleaning method after chemical mechanical polishing according to the present invention. According to this principle explanatory diagram,
The principle of the wafer (substrate) cleaning method after chemical mechanical polishing of the present invention will be described.
【００１９】〔プロセス１〕 化学的機械研磨工程 本発明を適用する化学的機械研磨工程であり、段差のあ
る層間絶縁膜の表面に化学的機械研磨を施して平坦化
し、洗浄する前までの工程を含む。[Process 1] Chemical Mechanical Polishing Step This is a chemical mechanical polishing step to which the present invention is applied, which is a step until the surface of the interlayer insulating film having a step is subjected to chemical mechanical polishing for planarization and before cleaning. including.
【００２０】〔プロセス２〕残留研磨粒子凝集工程 化学的機械研磨工程で用いた研磨剤中の研磨粒子が凝集
を起こすような溶液中に基板をディップする工程であ
り、この溶液は、研磨粒子の研磨液中でのゼータポテン
シャルがマイナスでれば、プラスに変化させるｐＨをも
った液体であり、研磨粒子の研磨液中でのゼータポテン
シャルがプラスであれば、マイナスに変化させるｐＨを
もった溶液であることが望ましい。また、この溶液は、
同時に酸化作用を有するものてあれば、よりよい。また
この工程は、この溶液に基板をディップした後の純水に
よる水洗工程を含むこともできる。[Process 2] Residual Abrasive Particle Aggregation Step This is a step of dipping the substrate in a solution in which the abrasive particles in the abrasive used in the chemical mechanical polishing step agglomerate. If the zeta potential in the polishing liquid is negative, the liquid has a pH that changes to a positive value. If the zeta potential of the polishing particles in the polishing liquid is a positive value, the solution has a pH that changes to a negative value. Is desirable. Also, this solution
It is better if it has an oxidizing effect at the same time. This step can also include a washing step with pure water after dipping the substrate in this solution.
【００２１】〔プロセス３〕 スクラブ工程 基板のスクラブ洗浄工程であり、洗浄効果を向上するた
め、ブラシスクラブであることが望ましい。[Process 3] Scrub Step This is a scrub cleaning step for the substrate, and brush scrub is preferable in order to improve the cleaning effect.
【００２２】〔プロセス４〕 ＳＣ１洗浄 通常の半導体製造工程で多用されている、アンモニア：
過酸化水素：水（１：１：５）のアルカリ性洗浄液によ
るＳＣ１洗浄である。[Process 4] SC1 cleaning Ammonia, which is frequently used in the normal semiconductor manufacturing process:
SC1 cleaning with an alkaline cleaning solution of hydrogen peroxide: water (1: 1: 5).
【００２３】〔プロセス５〕 基板乾燥工程 基板を乾燥する工程である。[Process 5] Substrate Drying Step This is a step of drying the substrate.
【００２４】本発明では、図１のプロセス２のように、
化学的機械研磨を施した基板を、この化学的機械研磨で
用いた研磨剤中の研磨粒子が凝集を起こす溶液に浸漬す
ることによって、基板の表面に研磨後も残留している研
磨粒子を凝集させて、粒子の粒径を大きくし、スクラブ
洗浄で容易に除去できるようにしている。In the present invention, as in process 2 of FIG.
By immersing the substrate that has been subjected to chemical mechanical polishing in a solution that causes the abrasive particles in the polishing agent used in this chemical mechanical polishing to agglomerate, the abrasive particles that remain on the surface of the substrate even after polishing are agglomerated. Thus, the particle size of the particles is increased so that the particles can be easily removed by scrub cleaning.
【００２５】スクラブ洗浄では大きな粒径の粒子の除去
は容易であるが、小さい粒径の粒子の除去は困難である
ため、スクラブ洗浄後、ＳＣ１洗浄を行うことによって
小さい粒径の粒子の除去を可能にしている。Particles having a large particle size can be easily removed by scrub cleaning, but particles having a small particle size are difficult to remove. Therefore, SC1 cleaning is performed after scrub cleaning to remove particles having a small particle size. It is possible.
【００２６】また、研磨粒子が凝集を起こすためには、
コロイド状態にある研磨粒子の安定性を崩す必要がある
ため、化学的機械研磨を施した基板を、研磨粒子の研磨
液中でのゼータポテンシャルがマイナスであったならプ
ラスに変化させるｐＨをもった溶液、また、ゼータポテ
ンシャルがプラスであったならばマイナスへ変化させる
ｐＨをもった溶液に浸漬することが効果的である。Further, in order for the abrasive particles to aggregate,
Since it is necessary to impair the stability of the abrasive particles in the colloidal state, the substrate subjected to chemical mechanical polishing has a pH that changes to positive if the zeta potential of the abrasive particles in the polishing liquid is negative. It is effective to immerse in a solution or a solution having a pH that changes the zeta potential to a negative value if it is a positive value.
【００２７】さらに、この溶液に酸化作用をもたせる
と、被研磨物である酸化膜と反応した研磨粒子を酸化す
ることによって、酸化膜表面と研磨粒子の結合を断ち切
り、研磨粒子の凝集をさらに促進することが可能にな
る。Further, when this solution is made to have an oxidizing action, by oxidizing the abrasive particles that have reacted with the oxide film as the object to be polished, the bond between the oxide film surface and the abrasive particles is cut off, and the agglomeration of the abrasive particles is further promoted. It becomes possible to do.
【００２８】[0028]
【実施例】以下、本発明の一実施例の化学的機械研磨後
の基板洗浄方法を、先に用いた原理説明図（図１）を参
照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate cleaning method after chemical mechanical polishing according to an embodiment of the present invention will be described below with reference to the principle explanatory diagram (FIG. 1) used previously.
【００２９】〔プロセス１〕 化学的機械研磨工程 プロセス１は、半導体集積回路装置の層間絶縁膜の表面
を平坦化するための研磨工程を施す工程である。この層
間絶縁膜の材料は、例えば、プラズマシリコン酸化膜、
ＣＶＤシリコン酸化膜、ＰＶＤシリコン酸化膜等であ
り、特に、限定されない。[Process 1] Chemical Mechanical Polishing Process Process 1 is a process of performing a polishing process for flattening the surface of the interlayer insulating film of the semiconductor integrated circuit device. The material of this interlayer insulating film is, for example, a plasma silicon oxide film,
It is a CVD silicon oxide film, a PVD silicon oxide film, or the like, and is not particularly limited.
【００３０】また、この研磨工程は基板の研磨だけでな
く、研磨装置に供給する研磨剤に代えて水を供給する工
程である水研磨によって、基板表面の粒子を除去する工
程を含んでいてもよい。すなわち、研磨機を用いた工程
は全てこの研磨工程に含まれる。Further, the polishing step may include not only the step of polishing the substrate but also the step of removing particles on the surface of the substrate by water polishing which is a step of supplying water in place of the polishing agent supplied to the polishing apparatus. Good. That is, all steps using a polishing machine are included in this polishing step.
【００３１】この研磨工程において用いられる研磨剤
は、シリカゾル、ジルコニアゾル、セリアゾル、アルミ
ナ粒子を含むゾル等であり、特に限定されないが、ここ
では、アルカリ性溶液のジルコニアゾルを用いる。The polishing agent used in this polishing step is silica sol, zirconia sol, ceria sol, sol containing alumina particles and the like, and is not particularly limited, but here, zirconia sol of alkaline solution is used.
【００３２】〔プロセス２〕 残留研磨粒子凝集工程 プロセス１の研磨工程を施した基板にプロセス２の工程
を施す。この際、研磨終了後、基板を乾燥させることな
く直ちにプロセス２に入ることが望ましいが、乾燥して
いてもよい。また、プロセス２に入る前に純水で洗浄す
る工程が入っていてもよい。[Process 2] Residual Abrasive Particle Aggregation Step The substrate subjected to the polishing step of the process 1 is subjected to the step of the process 2. At this time, it is desirable to immediately enter the process 2 without drying the substrate after completion of polishing, but it may be dry. Further, a step of cleaning with pure water may be included before entering the process 2.
【００３３】プロセス２の残留研磨粒子凝集工程で用い
る溶液は、研磨粒子が凝固を起こすようなものであれば
何でもよいが、ここでは硫酸過酸化水素水を使用する。
ジルコニアゾルのゼータポテンシャルが０ｍＶとなるｐ
Ｈは中性付近に位置しており、かつアルカリ性ではマイ
ナスのゼータポテンシャル、酸性ではプラスのゼータポ
テンシャルをもつため、ここで例にあげたアルカリ性の
ジルコニアゾルに対しては、酸性の溶液であれば何でも
よい。The solution used in the residual abrasive particle aggregating step of Process 2 may be any solution as long as it causes the abrasive particles to coagulate, but here sulfuric acid hydrogen peroxide solution is used.
The zeta potential of zirconia sol is 0 mV p
H is located in the vicinity of neutrality, and has a negative zeta potential in alkaline and a positive zeta potential in acidic. Therefore, for the alkaline zirconia sol given here, if it is an acidic solution. Anything is fine.
【００３４】酸性の研磨液を用いて研磨を行ったのであ
れば、プロセス２で用いる溶液はアルカリ性であること
が望ましい。また、ここでは、硫酸過酸化水素水を用い
たが、硝酸、塩酸過酸化水素水、過酸化水素水、酢酸等
でも効果的に用いることができる。また、それらの混合
比は任意であるが、ここで用いた硫酸過酸化水素水溶液
は、硫酸：過酸化水素水の比率が４：１であった。If polishing is performed using an acidic polishing liquid, the solution used in Process 2 is preferably alkaline. Although sulfuric acid-hydrogen peroxide solution is used here, nitric acid, hydrochloric acid-hydrogen peroxide solution, hydrogen peroxide solution, acetic acid, etc. can also be effectively used. The mixing ratio of them is arbitrary, but the sulfuric acid-hydrogen peroxide solution used here had a sulfuric acid: hydrogen peroxide solution ratio of 4: 1.
【００３５】なお、この溶液が酸化作用をもつ場合は、
研磨後に基板表面に残留した研磨粒子起因の粒子を凝集
させる効果が大きくなる。研磨後の基板表面は研磨粒子
であるＺｒＯ2 と被研磨物である酸化膜とが化学反応を
起こしＳｉ−Ｏ−Ｚｒの結合を形成するが、このＺｒを
プロセス２の溶液で酸化しＺｒの過酸化状態をつくるこ
とによって酸化膜表面からＺｒＯ2 粒子を遊離させる。When this solution has an oxidizing effect,
The effect of aggregating the particles caused by the abrasive particles remaining on the surface of the substrate after polishing is increased. On the surface of the substrate after polishing, ZrO 2 which is polishing particles and an oxide film which is an object to be polished cause a chemical reaction to form a bond of Si—O—Zr. ZrO 2 particles are released from the oxide film surface by creating a peroxidized state.
【００３６】また、基板表面に遊離して残留しているＺ
ｒＯ2 粒子は、研磨剤のアルカリ溶液からプロセス２の
酸性溶液に変化することによって、ゼータポテンシャル
０ｍＶ付近の変化を経て、研磨粒子の状態は非常に不安
定な状態になり、コロイド状態が保てなくなる。その結
果、研磨粒子の凝集が起こり、粒径は大きなものに変化
する。In addition, Z which remains free on the substrate surface
The rO 2 particles change from the alkaline solution of the polishing agent to the acidic solution of Process 2 to change the zeta potential near 0 mV, and the state of the polishing particles becomes very unstable, so that the colloidal state can be maintained. Disappear. As a result, agglomeration of abrasive particles occurs, and the particle size changes to a large size.
【００３７】この溶液に基板をディップする時間は任意
であり、研磨粒子の凝集が起こるかぎり制限はないが、
ここでは時間を１０分とした。その後基板は純水で水洗
されて、基板表面に付着した化学薬品の除去が行われ
る。The time for dipping the substrate in this solution is arbitrary and is not limited as long as the agglomeration of abrasive particles occurs,
Here, the time was 10 minutes. After that, the substrate is washed with pure water to remove the chemicals attached to the substrate surface.
【００３８】〔プロセス３〕 スクラブ工程 プロセス３において基板はスクラブ洗浄される。このス
クラブ洗浄は高圧の純水による吹きつけ式のものでもよ
いし、高圧で微小な氷塊を吹きつけるものでもよいし、
ブラシによって基板表面を摩擦するものでもよいが、こ
こでは特にブラシスクラブを選択した。ブラシスクラブ
を行うことによって、プロセス２で凝集した研磨粒子の
うち、比較的大きなものが除去される。[Process 3] Scrub Step In process 3, the substrate is scrub cleaned. This scrub cleaning may be of a high pressure pure water spraying type, or of high pressure spraying a small ice block,
Although a brush may be used to rub the substrate surface, a brush scrub is selected here. By performing the brush scrub, relatively large particles among the abrasive particles agglomerated in the process 2 are removed.
【００３９】この工程を経たあとの基板は濡れたままに
保つのが望ましいが、乾燥していてもよい。プロセス３
を経た基板上には大きな粒子はほとんど残らないが、小
さな粒子はスクラブ洗浄では除去しきれないため残留す
る。The substrate after this step is preferably kept wet, but may be dried. Process 3
Large particles hardly remain on the substrate after passing through, but small particles remain because they cannot be completely removed by scrub cleaning.
【００４０】〔プロセス４〕 ＳＣ１洗浄 プロセス３で除去しきれなかった小さい粒子をプロセス
４のＳＣ１洗浄によって除去する。ＳＣ１洗浄は通常半
導体の製造工程において用いられる方法で行えばよい。
すなわち、アンモニアと過酸化水素水と水の１：１：５
の割合で混合したアンモニア過酸化水素水によって洗浄
し、この洗浄によって付着した化学薬品を除去できる手
段で洗浄を行ったが、アンモニア過酸化水素水のアンモ
ニア、過酸化水素水、純水の比率は任意である。[Process 4] SC1 Cleaning Small particles that could not be completely removed in Process 3 are removed by SC1 cleaning in Process 4. The SC1 cleaning may be performed by a method usually used in the semiconductor manufacturing process.
That is, ammonia: hydrogen peroxide water: water 1: 1: 5
It was washed with ammonia-hydrogen peroxide water mixed at a ratio of, and the cleaning was performed by a means capable of removing the attached chemicals. It is optional.
【００４１】また、洗浄に用いる温度は通常８０℃であ
るが、それより低くても高くてもよく、室温で行っても
よい。また、アンモニア過酸化水素水による洗浄によっ
て付着した化学薬品を除去する方法としては純水での水
洗でも、温湯で基板を洗浄する方法でもよい。The temperature used for washing is usually 80 ° C., but it may be lower or higher, or room temperature. Further, as a method of removing the attached chemicals by washing with ammonia hydrogen peroxide solution, washing with pure water or washing of the substrate with warm water may be used.
【００４２】〔プロセス５〕 基板乾燥工程 プロセス４で小さい粒子を洗浄除去し、この洗浄によっ
て付着した化学薬品を除去した基板の乾燥を行う。な
お、〔プロセス４〕と〔プロセス５〕の間に適宜他の洗
浄工程を施すことができる。また、この乾燥は、基板を
回転させて水を飛散させるスピン乾燥でもよいし、熱に
よる乾燥でもよい。基板を乾燥した後、次の基板プロセ
スへと進行していく。[Process 5] Substrate Drying Step In process 4, small particles are washed and removed, and the substrate from which chemicals attached by this washing are removed is dried. It should be noted that another cleaning step can be appropriately performed between [Process 4] and [Process 5]. Further, this drying may be spin drying in which the substrate is rotated to scatter water, or may be drying by heat. After the substrate is dried, the next substrate process is performed.
【００４３】図２は、本発明の一実施例の化学的機械研
磨後のウェハ洗浄方法の効果説明図である。この図に
は、ＺｒＯ2 を研磨粒子とするアルカリ性の研磨剤で酸
化膜を研磨した後に、プロセス２において各種の溶液を
用いて洗浄を行った後のウェハ（基板）表面残留粒子数
を示している。FIG. 2 is an explanatory view of effects of the wafer cleaning method after chemical mechanical polishing according to one embodiment of the present invention. This figure shows the number of residual particles on the wafer (substrate) surface after the oxide film was polished with an alkaline abrasive containing ZrO 2 as abrasive particles and washed with various solutions in Process 2. There is.
【００４４】この図におけるブラシスクラブ洗浄＋ＳＣ
１洗浄は従来の洗浄方法を示し、残留粒子数は４２５１
１個／６インチ基板であるが、本発明の洗浄方法によっ
て洗浄した場合は、硫酸過酸化水素水洗浄＋ブラシスク
ラブ洗浄＋ＳＣ１洗浄によって洗浄した場合は１５６個
／６インチ基板、塩酸過酸化水素水洗浄＋ブラシスクラ
ブ洗浄＋ＳＣ１洗浄によって洗浄した場合は６３６５個
／６インチ基板、硝酸＋ブラシスクラブ洗浄＋ＳＣ１洗
浄によって洗浄した場合は２６８３１個／６インチ基板
となり、本発明の洗浄方法を用いることによって、基板
表面の残留粒子数を大幅に低減することができることが
わかる。Brush scrub cleaning + SC in this figure
1 cleaning shows the conventional cleaning method, the number of residual particles is 4251
Although it is 1 piece / 6 inch substrate, when it is cleaned by the cleaning method of the present invention, it is 156 pieces / 6 inch board when it is cleaned by sulfuric acid / hydrogen peroxide solution cleaning + brush scrub cleaning + SC1 cleaning, hydrochloric acid hydrogen peroxide solution. Cleaning + brush scrub cleaning + SC1 cleaning yields 6365/6 inch substrates, nitric acid + brush scrub cleaning + SC1 cleaning yields 26831/6 inch substrates. By using the cleaning method of the present invention, It can be seen that the number of residual particles on the surface can be significantly reduced.
【００４５】[0045]
【発明の効果】以上説明したように、本発明によれば、
被研磨物である酸化膜との反応性のあまり大きくないＳ
ｉＯ2 粒子のみならず、反応性の高いＺｒＯ2 粒子やＣ
ｅＯ2粒子等も洗浄後の粒子数を低減することが可能と
なり、被研磨物である酸化膜との反応性の高いＺｒＯ2
粒子やＣｅＯ2 粒子等研磨液として使用することによっ
て研磨速度を上昇させ、スループットを向上させ、研磨
剤使用量の低減等に効果を奏し、従来から残留粒子の除
去だけが唯一の欠点であったＺｒＯ2 粒子やＣｅＯ2 粒
子の研磨液を実用レベルで使用するに寄与するところが
大きい。As described above, according to the present invention,
S that does not have a great reactivity with the oxide film that is the object to be polished
Not only iO 2 particles but also highly reactive ZrO 2 particles and C
eO 2 particles or the like also becomes possible to reduce the number of particles after cleaning, ZrO 2 high reactivity with the oxide film to be polished
By using as a polishing liquid such as particles or CeO 2 particles, the polishing rate is increased, throughput is improved, and the effect of reducing the amount of abrasive used is achieved. Conventionally, removal of residual particles was the only drawback. It greatly contributes to use of a polishing liquid for ZrO 2 particles and CeO 2 particles at a practical level.
【図１】本発明の化学的機械研磨後のウェハ洗浄方法の
原理説明図である。FIG. 1 is a diagram illustrating the principle of a wafer cleaning method after chemical mechanical polishing according to the present invention.
【図２】本発明の一実施例の化学的機械研磨後のウェハ
洗浄方法の効果説明図である。FIG. 2 is an explanatory diagram of an effect of a wafer cleaning method after chemical mechanical polishing according to an embodiment of the present invention.
Claims (7)
該基板を研磨液中の研磨粒子のコロイド状態が不安定に
なり凝集を起こす溶液中に浸漬する工程と、次いで該基
板にスクラブ洗浄を施す工程を含むことを特徴とする化
学的機械研磨後の基板洗浄方法。1. After subjecting the substrate to a chemical mechanical polishing step,
After chemical mechanical polishing, which comprises a step of immersing the substrate in a solution in which the colloidal state of abrasive particles in the polishing liquid becomes unstable and causes agglomeration, and then a step of scrub cleaning the substrate. Substrate cleaning method.
板にアンモニア−過酸化水素水−水によって洗浄を施
し、次いで該基板を乾燥することを特徴とする請求項１
に記載された化学的機械研磨後の基板洗浄方法。2. The scrub cleaning of the substrate, the ammonia-hydrogen peroxide solution-water cleaning of the substrate, and the subsequent drying of the substrate.
A method for cleaning a substrate after chemical mechanical polishing according to claim 1.
磨工程と純水による研磨工程を含むことを特徴とする請
求項１に記載された化学的機械研磨後の基板洗浄方法。3. The method of cleaning a substrate after chemical mechanical polishing according to claim 1, wherein the chemical mechanical polishing step includes a polishing step with an abrasive and a polishing step with pure water.
態が不安定になり凝集を起こす溶液中に浸漬する工程
が、純水による水洗工程を含むことを特徴とする請求項
１に記載された化学的機械研磨後の基板洗浄方法。4. The method according to claim 1, wherein the step of immersing the substrate in a solution in which the colloidal state of the polishing particles in the polishing solution becomes unstable and causes agglomeration includes a step of washing with pure water. Method of cleaning substrate after chemical mechanical polishing.
安定になり凝集を起こす溶液が、基板の表面に付着した
研磨液中の研磨粒子のゼータポテンシャルをプラスから
マイナスに、もしくは、マイナスからプラスに変化させ
る溶液であることを特徴とする請求項１から請求項４ま
でのいずれか１項に記載された化学的機械研磨後の基板
洗浄方法。5. The solution in which the colloidal state of the polishing particles in the polishing liquid becomes unstable and causes agglomeration, the zeta potential of the polishing particles in the polishing liquid adhering to the surface of the substrate is changed from plus to minus or from minus. The method for cleaning a substrate after chemical mechanical polishing according to any one of claims 1 to 4, wherein the solution is a positively changing solution.
子のゼータポテンシャルをプラスからマイナスに、もし
くは、マイナスからプラスに変化させる溶液が、研磨粒
子に対して酸化作用をもつ溶液であることを特徴とする
請求項４に記載された化学的機械研磨後の基板洗浄方
法。6. The solution for changing the zeta potential of the polishing particles in the polishing liquid adhering to the surface of the substrate from plus to minus or from minus to plus is a solution having an oxidizing effect on the polishing particles. The method for cleaning a substrate after chemical mechanical polishing according to claim 4, wherein:
あり、基板の表面に付着した研磨液中の研磨粒子のゼー
タポテンシャルをプラスからマイナスに、もしくは、マ
イナスからプラスに変化させる溶液が、研磨粒子に対し
て酸化作用をもつ溶液であることを特徴とする請求項１
から請求項４までのいずれか１項に記載された化学的機
械研磨後の基板洗浄方法。7. The scrub cleaning is brush scrub cleaning, and a solution for changing the zeta potential of the polishing particles in the polishing liquid adhering to the surface of the substrate from plus to minus or from minus to plus is used as the polishing particles. 2. A solution having an oxidizing effect on the other hand.
The method for cleaning a substrate after chemical mechanical polishing according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7171686A JPH0922885A (en) | 1995-07-07 | 1995-07-07 | Method for cleaning substrate after chemical and mechanical polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7171686A JPH0922885A (en) | 1995-07-07 | 1995-07-07 | Method for cleaning substrate after chemical and mechanical polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0922885A true JPH0922885A (en) | 1997-01-21 |
Family
ID=15927819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7171686A Withdrawn JPH0922885A (en) | 1995-07-07 | 1995-07-07 | Method for cleaning substrate after chemical and mechanical polishing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0922885A (en) |
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| US6568995B1 (en) | 1999-11-18 | 2003-05-27 | Nippon Sheet Glass Co., Ltd. | Method for cleaning glass substrate |
| US6656022B2 (en) | 2000-06-01 | 2003-12-02 | Hitachi, Ltd. | Method for polishing a semiconductor substrate member |
| US7300683B2 (en) | 2003-12-26 | 2007-11-27 | Canon Kabushiki Kaisha | Method of forming resistance film |
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| US6656022B2 (en) | 2000-06-01 | 2003-12-02 | Hitachi, Ltd. | Method for polishing a semiconductor substrate member |
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