JP2007266333A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a method in which leakage of internal atmosphere to the outside is prevented sufficiently, and poor processing of a substrate can be prevented sufficiently. <P>SOLUTION: In a processing chamber CHc, an opening MO and a maintenance cover MD which can open/close the opening MO are provided on the outer wall facing the chamber outer space CLS. An inner wall IW is provided on the inside of the outer wall facing the space in a clean room CL. An opening IO and an inner wall cover IID which can open/close the opening IO are provided on the inner wall IW. A worker can open the openings MO and IO by removing the maintenance cover MD and the inner wall cover IID. A control section controls operation of a first suction device 220 such that the pressure in the interruption space AT1 becomes highest by comparing the pressures in the chamber outer space CLS, the interruption space AT1 and the processing space AT2 obtained by pressure sensors p1, p2 and p3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs predetermined processing on a substrate.

  Conventionally, a substrate processing apparatus has been used to perform various processes on a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a glass substrate for an optical disk (for example, see Patent Document 1). ).

  In the substrate processing apparatus, for example, BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, ammonia, or a chemical solution or a mixed solution thereof (hereinafter, referred to as a substrate solution) The substrate is subjected to a surface treatment (hereinafter referred to as a chemical treatment) by supplying the substrate with a chemical solution. Such chemical processing is performed in a processing chamber provided in the substrate processing apparatus and formed so as to surround an atmosphere around the substrate to be processed.

  The chemical liquid processing is performed, for example, by discharging a chemical liquid from a chemical liquid nozzle onto a substrate that is rotated in a processing chamber. In this case, the chemical solution is scattered by the rotation of the substrate, and a mist of the chemical solution is generated.

  When an atmosphere containing such a chemical solution (hereinafter referred to as a chemical solution atmosphere) leaks from the processing chamber to the outside, it adversely affects the human body of an operator working around the substrate processing apparatus. In addition, peripheral devices provided outside the processing chamber are corroded by the chemical atmosphere. Furthermore, when the chemical atmosphere comes into contact with the substrate transported outside the processing chamber, a substrate processing failure occurs.

  In order to prevent leakage of the chemical solution atmosphere from the processing chamber to the outside, there is a method in which the atmosphere in the processing chamber is set to a negative pressure with respect to the external atmosphere. As a configuration in which the atmosphere in the processing chamber is set to a negative pressure, there are a fan filter unit and a suction device.

  In this case, a fan filter unit that forms a downflow (downflow) is provided above the processing chamber, and a suction device that sucks the internal atmosphere is provided below the processing chamber. By forming the downflow in this way, scattering of particles in the processing chamber is prevented.

  In these configurations, the suction amount of the suction device is adjusted so as to increase with respect to the downflow flow rate fed into the processing chamber by the fan filter unit. Thereby, the atmosphere in the processing chamber can be controlled to be a negative pressure with respect to the external atmosphere. Hereinafter, controlling the atmosphere in the processing chamber to be a negative pressure with respect to the external atmosphere is referred to as negative pressure control.

  In the substrate processing apparatus of Patent Document 1, a fan filter unit is provided above a cleaning processing unit surrounded by the above-described processing chamber. Here, a fan unit for discharging the internal atmosphere to the outside is provided below the cleaning processing unit. Thereby, negative pressure control can be performed so that the atmosphere in the cleaning processing unit becomes negative pressure by controlling the operations of the fan filter unit and the fan unit.

Thus, by making the atmosphere in the processing chamber have a negative pressure with respect to the external atmosphere, the chemical atmosphere is prevented from leaking from the processing chamber to the outside. This prevents the adverse effects on the human body of the worker due to the leakage of the chemical atmosphere, the corrosion of peripheral equipment in the processing chamber, and the processing failure of the substrate.
2005-166968

  By the way, in the above processing chamber, for example, an opening for performing maintenance inside the processing chamber is formed from the outside, and an opening / closing door is provided in the opening. Hereinafter, in the processing chamber, the portions for communicating the external space and the internal space in this way are collectively referred to as a communication portion.

  When the substrate processing apparatus is assembled, a gap may be generated in the communication portion of the processing chamber due to deformation due to heat or change over time even if the opening is assembled so that the opening can be sealed with the door. In practice, it is difficult to completely prevent such a gap from occurring.

  The substrate processing apparatus is provided in a clean room. When a gap is generated in the processing chamber as described above, an atmosphere in the clean room (hereinafter referred to as an external atmosphere) is controlled by negative pressure through the gap. It flows into the chamber.

  In the clean room, the substrate is carried into and out of the substrate processing apparatus by a carrier. In recent years, as a carrier, for example, a closed pod (FOUP: front Opening Unified Pod) that can accommodate a plurality of substrates in a sealed state is used. Such a carrier is also used in the substrate processing apparatus of Patent Document 1.

  In this way, by using the FOUP for loading and unloading the substrate with respect to the substrate processing apparatus, even if some particles are generated in the clean room, the particles do not adhere to the substrate being transferred.

  Therefore, in the recent clean rooms, the cleanliness of the internal atmosphere has not been strictly controlled.

  However, when the atmosphere in the clean room flows into the processing chamber as described above, particles also flow into the processing chamber along with the inflow. In this case, there is a possibility that a processing failure of the substrate may occur in the processing chamber.

  Further, in the substrate processing apparatus that performs negative pressure control of the processing chamber as described above, an exhaust suction facility (utility facility) in the factory may be used as a suction device that sucks the internal atmosphere of the processing chamber. This exhaust suction facility may not be able to ensure a sufficient suction flow rate depending on the operating conditions of the entire factory.

  Therefore, when the suction flow rate by the exhaust suction equipment decreases, the operation of the fan filter unit provided in the processing unit is controlled to maintain the atmosphere in the processing chamber at a negative pressure, and the downflow flow rate is reduced to the suction flow rate. It is necessary to reduce it according to.

  However, in this case, the downflow flow rate in the processing chamber may be smaller than the minimum required flow rate. Thus, if a sufficient downflow flow rate cannot be obtained, particles may scatter in the processing chamber, which may cause a processing failure of the substrate.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of sufficiently preventing leakage of the internal atmosphere to the outside and sufficiently preventing processing defects of the substrate.

  (1) The substrate processing apparatus which concerns on this invention is a substrate processing apparatus which processes a board | substrate in the process part enclosed by the partition, Comprising: It provided in at least one part of the partition, and the 1st opening part was formed. It is possible to close and open at least one of the inner wall, the outer wall provided outside the inner wall and having the second opening formed outside the first opening, and the first opening and the second opening. Pressure adjusting means for adjusting the pressure of the blocking space formed between the opening and closing member and the inner wall and the outer wall to be higher than the pressure of the processing space surrounded by the partition wall and the inner wall and the pressure of the space outside the outer wall Are provided.

  In the substrate processing apparatus according to the present invention, the processing section is surrounded by the partition wall, and the inner wall having the first opening formed in at least a part of the partition wall is provided. In addition, an outer wall having a second opening formed outside the first opening is provided outside the inner wall. The opening / closing member can close and open at least one of the first opening and the second opening.

  By opening at least one of the first and second openings that can be closed and opened by the opening / closing member, the operator performs maintenance, for example, in the processing section from the outside of the outer wall through the first and second openings. be able to.

  By the pressure adjusting means, the pressure in the blocking space formed between the inner wall and the outer wall is adjusted to be higher than the pressure in the processing space surrounded by the partition wall and the inner wall and the pressure in the space outside the outer wall. In the processing space, the substrate is processed.

  Thereby, the atmosphere of the processing space and the atmosphere of the space outside the outer wall do not flow into the blocking space. Thereby, the atmosphere of the processing space and the atmosphere of the space outside the outer wall are blocked by the blocking space.

  Therefore, the atmosphere of the processing space is sufficiently prevented from leaking into the space outside the outer wall. As a result, it is possible to prevent the atmosphere of the processing space from adversely affecting the human body of the worker who works around the substrate processing apparatus.

  Further, peripheral equipment of the substrate processing apparatus provided on the outside of the outer wall is prevented from being corroded by the atmosphere of the processing space. Furthermore, the atmosphere of the processing space is prevented from coming into contact with the substrate transported outside the outer wall and adversely affecting the substrate.

  In addition to the above, since the atmosphere of the processing space and the atmosphere of the space outside the outer wall are blocked by the blocking space, the atmosphere outside the outer wall is prevented from flowing into the processing space. This prevents particles such as dust contained in the atmosphere outside the outer wall from entering the processing space. As a result, substrate processing defects are sufficiently prevented.

  (2) The pressure adjusting means is configured to reduce the pressure in the shut-off space between the pressure in the processing space and the space outside the outer wall in a state where at least one of the first and second openings that can be closed and opened is closed. You may adjust higher than a pressure.

  The substrate is processed in a state where at least one of the first and second openings that can be closed and opened is closed by the opening / closing member. At this time, the atmosphere of the processing space may be very harmful to peripherals of the substrate processing apparatus provided outside the human body and the outer wall.

  On the other hand, as described above, in the state where at least one of the first and second openings that can be closed and opened is closed by the opening and closing member, the pressure in the blocking space is changed to the pressure in the processing space and the outside of the outer wall. By adjusting so as to be higher than the pressure in the space, the atmosphere in the processing space and the atmosphere in the space outside the outer wall are blocked by the blocking space. Therefore, the atmosphere of the processing space is sufficiently prevented from leaking into the space outside the processing chamber.

  (3) The pressure adjusting means adjusts the pressure in the processing space to be higher than the pressure in the space outside the outer wall in a state where at least one of the first and second opening portions that can be closed and opened is closed by the opening / closing member. May be.

  In this case, the atmosphere outside the outer wall is reliably prevented from flowing into the processing space. This prevents particles contained in the atmosphere outside the processing chamber from entering the processing space. As a result, substrate processing defects are sufficiently prevented.

  In addition to the above, the atmosphere in the processing space and the atmosphere in the space outside the outer wall are blocked by the blocking space, thereby preventing the atmosphere in the processing space from leaking into the space outside the outer wall. That is, there is no need to set the negative pressure in the processing space with respect to the external space as in the prior art.

  Therefore, a sufficient downflow flow rate can be sent into the processing chamber regardless of the suction flow rate of the exhaust suction equipment in the factory. Therefore, it is possible to prevent particles from being scattered in the processing chamber and causing processing defects of the substrate.

  (4) The pressure adjusting means adjusts the pressure in the processing space to be lower than the pressure in the space outside the outer wall in a state where at least one of the first and second opening portions that can be closed and opened by the opening / closing member is opened. May be.

When at least one of the first and second openings that can be closed and opened is opened by the opening / closing member, the operator can perform maintenance, for example, inside the processing unit from the outside of the outer wall.

  Further, when the opening is opened, the processing space and the space outside the outer wall communicate with each other. Here, when the pressure in the processing space is adjusted to be lower than the pressure in the space outside the outer wall, the atmosphere in the space outside the outer wall flows into the processing space, and the atmosphere in the processing space becomes a space outside the outer wall. Leakage is reliably prevented.

  (5) The pressure adjusting unit may include an air flow generating unit that increases the pressure in the blocking space and the processing space by generating a downward flow in the blocking space and the processing space. In this case, a downflow is generated in the blocking space and the processing space by the airflow generation means. Thereby, the pressure of the blocking space and the processing space can be easily increased.

  Further, when such a downward flow is generated, particles scattered in the blocking space and the processing space flow downward. Thereby, the cleanliness of the blocking space and the processing space can be maintained high.

  (6) The pressure adjusting means may include first suction means for lowering the pressure in the blocking space by sucking the atmosphere in the blocking space. In this case, the atmosphere in the blocking space is sucked by the first suction means. Thereby, the pressure of the blocking space can be easily lowered.

  (7) The pressure adjusting unit may include a second suction unit that lowers the pressure of the processing space by sucking the atmosphere of the processing space. In this case, the atmosphere of the processing space is sucked by the second suction means. Thereby, the pressure in the processing space can be easily lowered.

  (8) The substrate processing apparatus includes an opening detection unit that detects opening of at least one of the first and second openings that can be closed and opened by the opening and closing member, and first and first that can be closed and opened by the opening and closing member. Control means for operating the second suction means in a state in which at least one of the two openings is opened, and stopping the airflow generation means based on detection of at least one opening by the opening detection means. Also good.

  In this case, the control means operates the second suction means in a state where at least one of the first and second openings that can be closed and opened by the opening / closing member is opened, and the first and second When the opening of at least one of the openings is detected, the airflow generation means is stopped.

  Accordingly, when at least one of the first and second openings is opened, the pressure in the processing space becomes lower than the pressure in the space outside the outer wall. As a result, the atmosphere of the processing space is reliably prevented from leaking into the space outside the outer wall.

  (9) The substrate processing apparatus includes a first pressure detecting unit that detects the pressure in the blocking space, a second pressure detecting unit that detects the pressure in the processing space, and a third pressure that detects the pressure in the space outside the outer wall. The pressure adjusting means may further adjust the pressure in the blocking space and the pressure in the processing space based on the pressure detected by the first, second, and third pressure detecting means.

  In this case, the pressure in the blocking space is detected by the first pressure detection means, the pressure in the processing space is detected by the second pressure detection means, and the pressure in the space outside the outer wall is detected by the third pressure detection means. The

  Based on the pressure detected by the first, second and third pressure detecting means, the pressure in the blocking space and the pressure in the processing space are adjusted by the pressure adjusting means. Thereby, adjustment of the pressure of the blocking space and the pressure of the processing space is easily and reliably performed.

  (10) The outer wall may be configured integrally with the partition wall. In this case, the substrate processing apparatus can have a simple configuration.

  (11) The inner wall may be configured integrally with the partition wall. In this case, the substrate processing apparatus can have a simple configuration.

  (12) The opening / closing member may be capable of closing and opening both the first opening and the second opening. In this case, the atmosphere in the processing space and the atmosphere in the space outside the outer wall are surely blocked by the blocking space, so that the atmosphere outside the outer wall is reliably prevented from flowing into the processing space. This reliably prevents particles such as dust contained in the atmosphere outside the outer wall from entering the processing space. As a result, substrate processing defects are more sufficiently prevented.

  (13) The opening / closing member includes a first lid member that can close and open the first opening, and a second lid member that can close and open the second opening, The lid member may be formed in a shape that can pass through the second opening. In this case, the operator can easily take out the first lid member capable of closing and opening the first opening from the space outside the outer wall to the space outside the outer wall.

  According to the present invention, the pressure in the blocking space is adjusted higher than the pressure in the processing space and the pressure outside the outer wall by the pressure adjusting means. Thereby, the atmosphere of the processing space and the atmosphere of the space outside the outer wall do not flow into the blocking space. Thereby, the atmosphere of the processing space and the atmosphere of the space outside the outer wall are blocked by the blocking space.

  Therefore, the atmosphere of the processing space is sufficiently prevented from leaking into the space outside the outer wall. As a result, it is possible to prevent the atmosphere of the processing space from adversely affecting the human body of the worker who works around the substrate processing apparatus.

  In addition, peripheral equipment of the substrate processing apparatus provided outside the processing chamber is prevented from being corroded by the atmosphere of the processing space. Furthermore, the atmosphere of the processing space is prevented from coming into contact with the substrate transported outside the processing chamber and adversely affecting the substrate.

  In addition to the above, since the atmosphere of the processing space and the atmosphere of the space outside the outer wall are blocked by the blocking space, the atmosphere outside the outer wall is prevented from flowing into the processing space. This prevents particles such as dust contained in the atmosphere outside the outer wall from entering the processing space. As a result, substrate processing defects are sufficiently prevented.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

  In the following description, a substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, a substrate for an optical disk, and the like.

  The chemical solution is, for example, an aqueous solution such as BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid or ammonia, or a mixed solution thereof. Say.

  The rinsing liquid refers to an organic solvent such as pure water, carbonated water, ozone water, magnetic water, reduced water (hydrogen water) or ionic water, or IPA (isopropyl alcohol).

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 is provided in a clean room CL. The substrate processing apparatus 100 has processing areas A and B, and a transfer area C between the processing areas A and B.

  In the processing area A, a control unit 4, fluid box units 2a and 2b, and cleaning processing units 5a and 5b are arranged. Each of the cleaning processing portions 5a and 5b is formed by processing chambers CHa and CHb each having a plurality of outer walls (thick line portions in FIG. 1). The internal spaces of the chambers CHa and CHb are blocked from the outside (for example, the clean room CL and the transfer area C) by the outer wall.

  In the processing chambers CHa and CHb, on the outer wall facing the transfer area C, an opening CO (not shown) (see FIG. 4) and a loading / unloading shutter CD capable of opening and closing the opening CO are provided.

  Further, in the processing chambers CHa and CHb, the outer wall facing the space in the clean room CL is provided with an unillustrated opening MO (see FIG. 4) and a maintenance cover MD that can open and close the opening MO.

  Further, in the processing chambers CHa and CHb, an inner wall IW is provided inside the outer wall facing the space in the clean room CL. The inner wall IW is provided with an opening IO (not shown) (see FIG. 4) and an inner wall cover IID that can open and close the opening IO.

  Details of the configuration and operation of the loading / unloading shutter CD, the maintenance cover MD and the inner wall cover IID provided in these processing chambers CHa and CHb will be described later.

  1 are pipes, joints, valves, flow meters, regulators for supplying chemicals and rinsing liquids to the cleaning processing units 5a, 5b and waste liquids and exhausts from the cleaning processing units 5a, 5b, respectively. Houses fluid-related equipment such as pumps, temperature controllers, processing liquid storage tanks, and suction devices.

  In the cleaning processing units 5a and 5b, a cleaning process for the substrate W with a chemical solution (hereinafter referred to as a chemical process) and a cleaning process for the substrate W with a rinse liquid (hereinafter referred to as a rinse process) are performed. In the present embodiment, for example, the chemical solution used in the cleaning processing units 5a and 5b is BHF that is a mixed solution of ammonium fluoride and hydrogen fluoride, and the rinse solution is pure water.

  In the processing region B, fluid box portions 2c and 2d and cleaning processing portions 5c and 5d are arranged. Each of the fluid box portions 2c and 2d and the cleaning processing portions 5c and 5d has the same configuration as the fluid box portions 2a and 2b and the cleaning processing portions 5a and 5b, and the cleaning processing portions 5c and 5d are the cleaning processing portion 5a. , 5b.

  Hereinafter, the cleaning processing units 5a, 5b, 5c, and 5d are collectively referred to as processing units. In the transfer area C, a substrate transfer robot CR is provided.

  An indexer ID for carrying in and out the substrate W is arranged on one end side of the processing areas A and B, and the indexer robot IR is provided inside the indexer ID. The carrier 1 that stores the substrate W is placed on the indexer ID.

  The indexer robot IR with the indexer ID moves in the direction of the arrow U, takes out the substrate W from the carrier 1 and passes it to the substrate transport robot CR, and conversely receives the substrate W subjected to a series of processing from the substrate transport robot CR. Return to carrier 1.

  The substrate transfer robot CR transfers the substrate W delivered from the indexer robot IR to the designated processing unit, or transfers the substrate W received from the processing unit to another processing unit or the indexer robot IR.

  In the present embodiment, after the chemical processing and the rinsing processing are performed on the substrate W in any of the cleaning processing units 5a to 5d, the substrate W is unloaded from the cleaning processing units 5a to 5d by the substrate transport robot CR, and the indexer It is carried into the carrier 1 via the robot IR.

  The control unit 4 includes a computer including a CPU (Central Processing Unit) and controls the operation of each component in the substrate processing apparatus 100. For example, the control unit 4 controls the operation of each processing unit in the processing areas A and B, the operation of the substrate transfer robot CR in the transfer area C, and the operation of the indexer robot IR of the indexer ID. Details of a specific configuration controlled by the control unit 4 will be described later.

  In the present embodiment, a fan filter unit for forming a downflow (downflow) in the substrate processing apparatus 100 is provided on the substrate processing apparatus 100 having the configuration of FIG. The fan filter unit includes a fan and a filter.

  FIG. 2 is an external perspective view showing an assembly state of the substrate processing apparatus 100 of FIG. As shown in FIG. 2, the substrate processing apparatus 100 of FIG. 1 fits a plurality of processing chambers CHa, CHb, CHc, and CHd in an outer frame F (thick line portion in FIG. 2) assembled in advance by a metal frame or the like. It is produced by. FIG. 2 shows a state where the processing chamber CHc is fitted into the outer frame F.

  In the processing chamber CHc of FIG. 2, an opening CO and a loading / unloading shutter CD are shown on the outer wall facing the transfer region C. Although not shown in FIG. 2, the other processing chambers CHa, CHb, and CHd have the same structure.

  Here, upper portions of the processing chambers CHa to CHd are opened. At the time of assembly, the fan filter unit FFU is attached to the opening CUO. Further, the fan filter unit FFU is also attached to the upper part of the indexer ID (FIG. 1) and the transport area C (FIG. 1) in the substrate processing apparatus 100.

(2) Configuration of Cleaning Processing Unit FIG. 3 is a view for explaining the configuration of the cleaning processing units 5a to 5d of the substrate processing apparatus 100 according to the embodiment of the present invention.

  3 removes impurities such as organic substances adhering to the surface of the substrate W by a chemical solution process, and then performs a rinse process.

  As shown in FIG. 3, the cleaning processing units 5 a to 5 d include a spin chuck 21 for holding the substrate W horizontally and rotating the substrate W around a vertical rotation axis passing through the center of the substrate W. The spin chuck 21 is fixed to the upper end of the rotation shaft 25 rotated by the chuck rotation drive mechanism 36.

  The substrate W is rotated while being held horizontally by the spin chuck 21 when performing the chemical treatment and the rinsing treatment. As shown in FIG. 3, in this embodiment, the adsorption type spin chuck 21 is used, but a spin chuck that holds the peripheral edge of the substrate W may be used.

  A motor 60 is provided outside the spin chuck 21. A rotation shaft 61 is connected to the motor 60. An arm 62 is connected to the rotation shaft 61 so as to extend in the horizontal direction, and a chemical solution processing nozzle 50 is provided at the tip of the arm 62.

  The rotation shaft 61 is rotated by the motor 60 and the arm 62 is rotated, so that the chemical solution processing nozzle 50 moves above the substrate W held by the spin chuck 21.

  A chemical treatment supply pipe 63 is provided so as to pass through the motor 60, the rotation shaft 61 and the arm 62. The chemical treatment supply pipe 63 is connected to the fluid box portions 2a to 2d.

  The chemical solution (BHF) is supplied from the fluid box portions 2a to 2d through the chemical solution supply pipe 63 to the chemical solution processing nozzles 50 of the cleaning processing portions 5a to 5d. Thereby, the chemical solution can be supplied to the surface of the substrate W.

  When the chemical solution is supplied to the surface of the substrate W, the chemical solution processing nozzle 50 is positioned above the substrate W, and when the chemical solution is not supplied to the surface of the substrate W, the chemical solution processing nozzle 50 is retracted to a predetermined position.

  A motor 71 is provided outside the spin chuck 21. A rotation shaft 72 is connected to the motor 71. In addition, an arm 73 is connected to the rotation shaft 72 so as to extend in the horizontal direction, and a rinse processing nozzle 70 is provided at the tip of the arm 73.

  The rotation shaft 72 is rotated by the motor 71 and the arm 73 is rotated, so that the rinsing nozzle 70 moves above the substrate W held by the spin chuck 21.

  A rinse treatment supply pipe 74 is provided so as to pass through the motor 71, the rotation shaft 72, and the arm 73. The rinse treatment supply pipe 74 is connected to the fluid box portions 2a to 2d.

  The rinsing liquid (pure water) is supplied from the fluid box portions 2a to 2d through the rinsing treatment supply pipe 74 to the rinse treatment nozzles 70 of the cleaning treatment portions 5a to 5d. Thereby, the rinse liquid can be supplied to the surface of the substrate W.

  When the rinsing liquid is supplied to the surface of the substrate W, the rinsing nozzle 70 is positioned above the substrate W, and when the rinsing liquid is not supplied to the surface of the substrate W, the rinsing nozzle 70 is retracted to a predetermined position. The

  The spin chuck 21 is accommodated in the processing cup 23. A cylindrical partition wall 33 is provided inside the processing cup 23. Further, a waste space 31 for collecting and discarding the rinse liquid used for the rinsing process of the substrate W is formed so as to surround the periphery of the spin chuck 21. The waste space 31 is formed in an annular and groove shape along the outer periphery of the spin chuck 21.

  Further, a circulating liquid space 32 is provided between the processing cup 23 and the partition wall 33 so as to surround the waste space 31 and collect and circulate the chemical used in the chemical processing of the substrate W in the substrate processing apparatus 100. Is formed. The circulating fluid space 32 is formed in an annular and groove shape along the outer periphery of the waste space 31.

  The waste space 31 is connected to a waste pipe 34 for guiding the rinse liquid to a waste system pipe connected to a waste facility (not shown), and the circulation liquid space 32 is connected to a circulation system pipe connected to a circulation device (not shown). A recovery pipe 35 for guiding the chemical solution is connected.

  In addition, these waste system piping, the circulation apparatus, and the circulation system piping are provided in the fluid box portions 2a to 2d in FIG.

  A splash guard 24 is provided above the processing cup 23 to prevent the chemical liquid or the rinse liquid from the substrate W from splashing outward. The splash guard 24 has a rotationally symmetric shape with respect to the rotation shaft 25. On the inner surface of the upper end portion of the splash guard 24, a discard guide groove 41 having a square cross section is formed in an annular shape.

  Further, a recovery liquid guide portion 42 is formed on the inner surface of the lower end portion of the splash guard 24. The recovery liquid guide portion 42 has an inclined surface that is inclined outward and downward. A partition wall storage groove 43 for receiving the partition wall 33 of the processing cup 23 is formed in the vicinity of the upper end of the recovered liquid guide portion 42.

  The splash guard 24 is supported by a guard lifting / lowering drive mechanism 37 configured by a ball screw mechanism or the like. The guard lifting / lowering drive mechanism 37 includes a splash guard 24, a loading / unloading position P <b> 1 whose upper end is substantially the same as or lower than the upper end of the spin chuck 21, and a recovered liquid guide 42 is the spin chuck 21. Are moved up and down between a circulation position P2 facing the outer peripheral end face of the substrate W and a disposal position P3 where the discard guide groove 41 faces the outer peripheral end face of the substrate W held by the spin chuck 21.

  When the substrate W is loaded onto the spin chuck 21 and when the substrate W is unloaded from the spin chuck 21, the splash guard 24 is lowered to the loading / unloading position P1.

  When the splash guard 24 is at the circulation position P <b> 2, the chemical liquid splashed outward from the substrate W is guided to the circulation liquid space 32 by the recovery liquid guide part 42 and sent to the circulation system pipe through the recovery pipe 35.

  On the other hand, when the splash guard 24 is at the disposal position P3, the rinse liquid splashed outward from the substrate W is guided to the disposal space 31 by the disposal guide groove 41 and discarded through the disposal pipe 34.

  As described above, in the cleaning processing units 5a to 5d, the chemical solution is supplied onto the substrate W during the chemical solution processing. Thereby, at the time of chemical solution processing, as described in the background art, the chemical solution is scattered in the processing chambers CHa to CHd, and chemical solution mist is generated. An atmosphere containing such a chemical solution is called a chemical solution atmosphere.

  According to the substrate processing apparatus 100 according to the present embodiment, the chemical atmosphere is prevented from leaking from the processing chambers CHa to CHd to the outside (the internal space of the clean room CL in FIG. 1) during chemical processing. Moreover, the inflow of the atmosphere from the internal space of the clean room CL of FIG. 1 to the internal spaces of the processing chambers CHa to CHd is prevented.

  The pressure in the transfer area C is adjusted to be higher than the pressure in the processing chambers CHa to CHd, and the chemical atmosphere in the processing chambers CHa to CHd is prevented from leaking to the transfer area C.

  Such blocking of the atmosphere between the processing chambers CHa to CHd and the internal space of the clean room CL in FIG. 1 is performed by adjusting the pressure of the atmosphere in the processing chambers CHa to CHd. Hereinafter, this pressure adjustment will be described.

(3) Pressure adjustment of atmosphere in processing chamber (3-a) Configuration of processing chamber FIG. 4 is a cross-sectional view taken along line SS of the cleaning processing unit 5c in the substrate processing apparatus 100 of FIG. In FIG. 4, a part of the internal configuration of the fluid box portion 2c connected to the cleaning processing portion 5c is shown.

  As shown in FIG. 4, a fan filter unit FFU is provided above the processing chamber CHc in the section taken along the line S-S in FIG. By operating the fan filter unit FFU, a constant flow downflow is formed in the processing chamber CHc.

  In the following description, the internal space of the clean room CL surrounding the substrate processing apparatus 100 of FIG. 1 is referred to as a chamber external space. In FIG. 4, the chamber outer space is indicated by the symbol CLS.

  In the following description, the outer wall facing the chamber outer space CLS of the processing chamber CHc is referred to as a first outer wall OW1, the outer wall facing the transfer region C is referred to as a second outer wall OW2, and the bottom surface of the processing chamber CHc. The outer wall that forms is called the third outer wall OW3.

  As shown in FIG. 4, an opening MO is formed at a substantially central portion of the first outer wall OW1 facing the chamber outer space CLS. A maintenance cover MD is attached to the first outer wall OW1 so as to surround the periphery of the opening MO.

  An opening IO is formed in a substantially central portion of the inner wall IW provided inside the first outer wall OW1. In the inner wall IW, an inner wall cover IID is attached so as to surround the periphery of the opening IO.

  The maintenance cover MD and the inner wall cover IID can be detached from the first outer wall OW1 and the inner wall IW, respectively.

  Therefore, the operator can open the openings MO and IO by removing the maintenance cover MD and the inner wall cover IID.

  The opening IO is configured to be smaller than the opening MO, and the inner wall cover IID is sized to pass through the opening MO. Thereby, the operator can easily attach and remove both the maintenance cover MD and the inner wall cover IID from the chamber external space CLS.

  Thereby, the operator can perform maintenance of the configuration in the processing chamber CHc (spin chuck 21, chuck rotation drive mechanism 36, guard lifting drive mechanism 37, etc. in FIG. 3) from the chamber external space CLS.

  In the vicinity of the maintenance cover MD and the inner wall cover IID, open / close sensors ds1 and ds2 for detecting the open / closed states of the corresponding openings MO and IO are provided. The open / close sensors ds1, ds2 may be contact sensors, or may be non-contact sensors using laser light, infrared light, or the like.

  An opening CO is formed at a substantially central portion of the second outer wall OW2 facing the transfer region C. On the second outer wall OW2, a loading / unloading shutter CD and a shutter driving unit SD3 are attached in the vicinity of the opening CO. The shutter drive unit SD3 opens and closes the opening CO by driving the loading / unloading shutter CD.

  In the processing chamber CHc of FIG. 4, when the opening CO is opened, the substrate W is loaded into the processing chamber CHc from the transfer region C, or the substrate W is transferred out of the processing chamber CHc into the transfer region C.

  As described above, two spaces are formed by the inner wall IW inside the processing chamber CHc. In the following description, a space between the first outer wall OW1 and the inner wall IW in the processing chamber CHc is referred to as a blocking space AT1, and a space between the inner wall IW and the second outer wall OW2 is referred to as a processing space AT2.

  A first suction pipe 210 is attached to the third outer wall OW3 that forms the bottom surface of the processing chamber CHc so as to be connected to the blocking space AT1. Further, a second suction pipe 230 is attached so as to be connected to the processing space AT2.

  The first suction pipe 210 connected to the blocking space AT1 extends to the fluid box portion 2c. In the fluid box portion 2 c, the first suction pipe 210 is connected to the first suction device 220. The first suction device 220 includes, for example, a pump, and sucks the atmosphere of the blocking space AT1 and discharges it to the outside of the clean room CL.

  The first suction device 220 may be composed of an exhaust suction facility (utility facility) in the factory (not shown) and a flow rate adjusting valve that adjusts the suction flow rate of the first suction pipe 210. In this case, the first suction pipe 210 is connected to an exhaust suction facility in the factory, and a flow rate adjusting valve is inserted into the first suction pipe 210.

  The second suction pipe 230 connected to the processing space AT2 is connected to a gas-liquid separation device 240 disposed below the processing space AT2. A gas discharge pipe 250 and a liquid discharge pipe 241 are connected to the gas-liquid separator 240, and the gas discharge pipe 250 and the liquid discharge pipe 241 extend to the fluid box portion 2c.

  The gas exhaust pipe 250 is connected to the second suction device 260. The second suction device 260 includes, for example, a pump and the like, sucks the atmosphere of the processing space AT2 through the second suction pipe 230 and the gas-liquid separator 240, and discharges the atmosphere to the outside of the clean room CL.

  The gas-liquid separator 240 separates the gas and the liquid contained in the atmosphere of the processing space AT2 sucked by the second suction device 260.

  The gas separated by the gas-liquid separation device 240 is discharged to the outside of the clean room CL through the gas discharge pipe 250 as described above.

  On the other hand, the liquid separated by the gas-liquid separator 240 is discharged outside the clean room CL through the liquid discharge pipe 241.

  Similarly to the first suction device 220, the second suction device 260 may be constituted by an exhaust suction facility in the factory (not shown) and a flow rate adjusting valve that adjusts the suction flow rate of the gas exhaust pipe 250. In this case, the gas exhaust pipe 250 is connected to an exhaust suction facility in the factory, and a flow rate adjusting valve is interposed in the gas exhaust pipe 250.

  In the above configuration, when the fan filter unit FFU operates, a downflow is formed in the blocking space AT1 and the processing space AT2. Thereby, the pressure in the blocking space AT1 and the processing space AT2 can be increased.

  On the other hand, by operating the first suction device 220, the pressure in the blocking space AT1 can be lowered. In addition, when the second suction device 260 operates, the pressure in the processing space AT2 can be lowered.

  As shown in FIG. 4, pressure sensors p1, p2, and p3 for detecting the pressures of the spaces are arranged in the blocking space AT1, the processing space AT2, and the chamber external space CLS.

  The pressure in the processing chamber CHc in FIG. 4 is detected by the maintenance cover MD and the opening / closing states of the openings MO and IO by the inner wall cover IID detected by the opening and closing sensors ds1 and ds2, and the pressure sensors p1, p2 and p3. Are adjusted based on the pressures of the blocking space AT1, the processing space AT2, and the chamber external space CLS.

  Details of the pressure adjustment in the processing chamber CHc and the effects thereof will be described with reference to FIG. FIG. 5 is a diagram for explaining details of pressure adjustment in the processing chamber CHc of FIG. 4 and the effect thereof. In the following description, it is assumed that the opening CO is always closed by the loading / unloading shutter CD. Accordingly, FIG. 5 does not show the opening CO and the loading / unloading shutter CD.

(3-b) Pressure adjustment when the openings are closed by all covers FIG. 5A shows a processing chamber when the openings MO and IO are closed by the maintenance cover MD and the inner wall cover IID. CHc is shown. As shown in FIG. 5A, the openings MO and IO are closed by the maintenance cover MD and the inner wall cover IID, so that the chamber external space CLS, the blocking space AT1, and the processing space AT2 are separated.

  The fan filter unit FFU operates when the openings MO and IO are closed by all the covers (the maintenance cover MD and the inner wall cover IID). As a result, as shown by an arrow df, a constant flow down flow is formed in the blocking space AT1 and the processing space AT2.

  Also, the first suction device 220 in FIG. 4 connected to the first suction pipe 210 and the second suction device 260 in FIG. 4 connected to the second suction pipe 230 also operate. Thereby, the atmospheres of the blocking space AT1 and the processing space AT2 are sucked.

  Here, in the present embodiment, the first suction device 220 and the second suction device 260 suck the atmosphere of the blocking space AT1 and the processing space AT2, respectively, but the suction flow rate can be adjusted.

  Thereby, when all the openings MO and IO are closed, the blocking space AT1 by the first suction device 220 and the second suction device 260 is based on the pressure detected by the pressure sensors p1, p2, and p3. In addition, the suction flow rate of the atmosphere in the processing space AT2 is adjusted. For example, when the same flow rate is blown from the fan filter unit FFU into the blocking space AT1 and the processing space AT2, the suction flow rate of the atmosphere in the blocking space AT1 by the first suction device 220 is the processing space by the second suction device 260. It is adjusted to be smaller than the suction flow rate of the atmosphere of AT2.

  Thereby, the pressure in the blocking space AT1 is set higher than the pressure in the processing space AT2. When the pressure in the blocking space AT1 is made higher than the pressure in the chamber external space CLS, the suction flow rate of the first suction device 220 in FIG. 4 is made smaller than the downflow flow rate from the fan filter unit FFU. To control. Thereby, the pressure of the blocking space AT1 becomes higher than the pressure of the chamber outer space CLS.

  By the way, as described in the problem to be solved by the invention, there is a case where a gap is generated in the communication portion of the processing chamber due to deformation or change with time of the opening and the cover of the processing chamber.

  For example, as indicated by a dotted line in FIG. 5A, there may be a gap g between the first outer wall OW1 and the maintenance cover MD and between the inner wall IW and the inner wall cover IID.

  In this case, as described above, the pressure in the blocking space AT1 is made higher than the pressure in the chamber outer space CLS and the processing space AT2, so that the atmosphere in the blocking space AT1 is indicated through the gap g as indicated by the thick arrow. And flows out into the processing space AT2. The chamber outer space CLS and the processing space AT2 are completely blocked by the blocking space AT1.

  Thus, even when chemical processing is performed in the processing space AT2, and harmful chemical components are diffused into the atmosphere, the atmosphere, that is, the chemical atmosphere is reliably prevented from leaking into the chamber external space CLS. .

  This prevents the chemical atmosphere from adversely affecting the human body of the worker who works around the substrate processing apparatus 100.

  Further, it is possible to prevent peripheral devices provided outside the processing chamber from being corroded by the chemical solution atmosphere. Furthermore, since the first outer wall OW1 facing the chamber outer space CLS is not in contact with the chemical atmosphere, the first outer wall OW1 does not need to be made of a material having excellent chemical resistance.

  Furthermore, the chemical atmosphere is prevented from coming into contact with the substrate conveyed in the chamber external space CLS and adversely affecting the substrate.

  In addition, even when particles such as dust are present in the atmosphere of the chamber outer space CLS, the atmosphere is prevented from flowing into the processing space AT2 from the chamber outer space CLS. As a result, processing defects on the substrate W are prevented.

  Note that the atmosphere of the blocking space AT1 is kept clean by the fan filter unit FFU. Therefore, even if the atmosphere of the blocking space AT1 flows out to the processing space AT2, the atmosphere of the processing space AT2 is maintained clean.

  Furthermore, in the present embodiment, it is preferable that the pressure in the processing space AT2 is set higher than the pressure in the chamber outer space CLS when all the openings MO and IO are closed. The reason for this will be described.

  As described above, the pressure in the processing space AT2 is adjusted by adjusting the suction flow rate of the atmosphere by the second suction device 260 with respect to the downflow flow rate formed by the fan filter unit FFU.

  Here, conversely, when setting the pressure of the processing space AT2 to be lower than the pressure of the chamber external space CLS, the suction flow rate of the atmosphere by the second suction device 260 is made larger than the downflow flow rate. There is a need.

  For this purpose, in order to reduce the resistance of the second suction pipe 230 and the gas exhaust pipe 250 through which the atmosphere of the processing space AT2 is sucked, it is necessary to increase the diameters of those pipes.

  Therefore, in order to set the pressure of the processing space AT2 to be lower than the pressure of the chamber external space CLS, the configuration of the second suction pipe 230, the gas discharge pipe 250, and the second suction device 260 is large. Turn into. Thereby, the substrate processing apparatus 100 is also enlarged.

  On the other hand, when the pressure in the processing space AT2 is set higher than the pressure in the chamber external space CLS, the suction flow rate of the atmosphere by the second suction device 260 is made smaller than the downflow flow rate.

  In this case, the second suction device 260 does not require a large suction flow rate. Therefore, it is not necessary to increase the diameters of the second suction pipe 230 and the gas exhaust pipe 250. As a result, the configuration of the second suction pipe 230, the gas discharge pipe 250, and the second suction device 260 can be reduced in size, and the substrate processing apparatus 100 can also be reduced in size.

  In the present embodiment, the shut-off space AT1 and the processing space AT2 use a common fan filter unit FFU, so that the formed downflow flow rate is constant, but the shut-off space AT1 and the processing space AT2 are different from each other. By installing separate fan filter units FFU, adjusting the downflow flow rate of each fan filter unit FFU with the suction flow rate of the atmosphere by the first suction device 220 and the second suction device 260 being constant, The pressure may be adjusted. Further, since the pressure in the blocking space AT1 only needs to be higher than the pressure in the processing space AT2 and the chamber outer space CLS, the first suction device 220 may be omitted, but the atmosphere in the blocking space AT1 is maintained clean. For this purpose, the first suction device 220 is preferably installed.

  Thus, when adjusting the downflow flow rate, when the pressure in the processing space AT2 is set higher than the pressure in the chamber external space CLS as described above, the downflow flow rate is increased compared to the suction flow rate. That is, the suction flow rate of the second suction device 260 can be set smaller than when the pressure of the processing space AT2 is set lower than the pressure of the chamber outer space CLS. Therefore, a sufficient downflow flow rate can be obtained in the processing chamber CHc, and the cleanliness of the processing space AT2 can be kept sufficiently high.

  In particular, when the second suction device 260 is constituted by an exhaust suction facility in the factory and a flow rate adjusting valve that adjusts the suction flow rate in the gas exhaust pipe 250, a sufficient suction flow rate is set according to the operating conditions of the entire factory. You may not get it.

  Even in such a case, since the pressure in the processing space AT2 is set higher than the pressure in the chamber external space CLS, a sufficient downflow flow rate can always be obtained.

  When all the openings MO and IO are closed, when the pressure in the processing space AT2 is set to be lower than the pressure in the chamber external space CLS, the atmosphere in the processing space AT2 is blocked by the blocking space AT1. Through this, it is possible to reliably prevent leakage into the chamber external space CLS.

(3-c) Pressure adjustment when the openings are opened by all covers FIG. 5B shows the processing chamber when the openings MO and IO are opened by the maintenance cover MD and the inner wall cover IID. CHc is shown. As shown in FIG. 5B, the openings MO and IO are opened by the maintenance cover MD and the inner wall cover IID, so that the chamber external space CLS, the blocking space AT1 and the processing space AT2 become the openings MO and IO. Communicated through.

  When the openings MO and IO are opened by all the covers (the maintenance cover MD and the inner wall cover IID), the fan filter unit FFU stops. As a result, no downflow is formed in the blocking space AT1 and the processing space AT2.

  On the other hand, the first suction device 220 in FIG. 4 connected to the first suction pipe 210 and the second suction device 260 in FIG. 4 connected to the second suction pipe 230 operate. Thereby, the atmospheres of the blocking space AT1 and the processing space AT2 are sucked.

  In this case, the pressure in the blocking space AT1 and the processing space AT2 is lower than the pressure in the chamber outer space CLS. Then, as indicated by the thick arrows in FIG. 5B, the atmosphere of the chamber external space CLS flows into the blocking space AT1 and the processing space AT2, and the first suction pipe 210 and the second suction pipe 230. Sucked into.

  Thereby, the atmosphere in the blocking space AT1 and the processing space AT2 becomes negative pressure with respect to the chamber external space CLS, and is reliably prevented from leaking into the chamber external space CLS.

  In the above description, the pressure adjustment of the atmosphere in the processing chamber CHc has been described, but the pressure adjustment of the internal atmosphere is similarly performed for the processing chambers CHa, CHb, and CHd.

(4) Control System of Substrate Processing Apparatus A control system of the substrate processing apparatus 100 will be described. FIG. 6 is a block diagram showing a configuration of a control system of the substrate processing apparatus 100 of FIG.

  The control unit 4 controls the operations of the indexer robot IR, the substrate transport robot CR, and the fan filter unit FFU in FIG. 1 and controls the components of the cleaning processing units 5a to 5d and the fluid box units 2a to 2d.

  In particular, the control unit 4 controls the operations of the rotation drive mechanism 36, the motors 60 and 71, the guard elevating drive mechanism 37, and the shutter drive unit SD3 of the cleaning processing units 5a to 5d.

  Further, the control unit 4 detects the opening / closing states of the openings MO and IO by the maintenance cover MD and the inner wall cover IID in FIG. 4 detected by the opening / closing sensors ds1 and sd2, and the pressure sensors p1, p2, and p3. The operations of the first suction device 220 and the second suction device 260 of the fluid box portions 2a to 2d are controlled based on the pressures in the chamber outer space CLS, the blocking space AT1, and the processing space AT2 in FIG.

  For example, when the maintenance cover MD and the inner wall cover IID are attached to the first outer wall OW1 and the inner wall IW, the control unit 4 opens the maintenance cover MD and the inner wall cover IID by the open / close sensors ds1 and ds2. A signal indicating that the parts MO and IO are closed is received.

  Thereby, the control part 4 operates the fan filter unit FFU. Further, the control unit 4 compares the pressures in the chamber external space CLS, the blocking space AT1, and the processing space AT2 obtained by the pressure sensors p1, p2, and p3, so that the pressure in the blocking space AT1 is the highest. The operations of the first suction device 220 and the second suction device 260 of the units 2a to 2d are controlled.

  Further, the control unit 4 compares the pressures in the chamber external space CLS, the blocking space AT1, and the processing space AT2 obtained by the pressure sensors p1, p2, and p3, so that the pressure in the processing space AT2 is higher than the pressure in the chamber external space CLS. The operation of the second suction device 260 of the fluid box portions 2a to 2d is controlled so as to be higher.

  For example, when the maintenance cover MD and the inner wall cover IID are removed from the first outer wall OW1 and the inner wall IW, the control unit 4 uses the open / close sensors ds1, ds2 to perform the maintenance cover MD and the inner wall cover IID. Receives a signal indicating that the openings MO and IO are opened.

  As a result, the control unit 4 stops the operation of the fan filter unit FFU. In addition, the control unit 4 operates the first suction device 220 and the second suction device 260 of the fluid box portions 2a to 2d.

(5) Other Configuration Examples In the present embodiment, as shown in FIG. 4, one fan filter unit FFU is provided above the processing chambers CHa to CHd. The fan filter unit FFU forms a common down flow in the blocking space AT1 and the processing space AT2.

  On the other hand, the substrate processing apparatus 100 may be provided with a plurality of fan filter units FFU or other downflow forming means corresponding to each of the blocking space AT1 and the processing space AT2.

  In this case, the downflow can be formed for each of the blocking space AT1 and the processing space AT2 by individually controlling the plurality of fan filter units FFU or other downflow forming means.

  Further, when the downflow flow rate can be adjusted by the fan filter unit FFU or other downflow forming means, the downflow flow rate can be adjusted for each of the blocking space AT1 and the processing space AT2, and the pressure in each space can be adjusted. .

  In addition, as another downflow formation means, the structure containing the fan filter unit FFU and the duct which has a predetermined shape, for example can be considered.

  As shown in FIG. 4, pressure sensors p1, p2, and p3 are provided in the chamber external space CLS, the blocking space AT1, and the processing space AT2, respectively. Instead, the pressure difference between the spaces is detected. A differential pressure sensor may be provided.

  In this case, the control unit 4 controls the first suction device 220 and the second suction device 260 of the fluid box portions 2a to 2d based on the differential pressure in each space detected by the differential pressure sensor.

  Further, it is not always necessary to install a sensor for detecting the pressure in the chamber external space CLS, the blocking space AT1, and the processing space AT2. The flow rate of the downflow supplied to the blocking space AT1 and the processing space AT2 and the suction flow rates by the first suction device 220 and the second suction device 260 are adjusted in advance so that the pressure in the blocking space AT1 becomes the highest. May be.

  In the present embodiment, the processing chambers CHa to CHd include a plurality of outer walls (first outer wall OW1, second outer wall OW2, and third outer wall OW3), but the configuration of the processing chambers CHa to CHd is limited to this. Not. For example, the processing chambers CHa to CHd may be integrally formed with a cylindrical or spherical outer wall.

  In the present embodiment, the inner wall IW may be provided so as to surround the opening MO of the processing chambers CHa to CHd.

  FIG. 7 is a view showing another configuration example of the inner wall IW of FIG. As shown in FIG. 7, the inner wall IW may be provided so as to surround the periphery of the opening MO of the first outer wall OW1.

  In this case, it is necessary to newly provide a downflow forming means such as a duct in order to form a downflow in the blocking space AT1. In FIG. 7, the duct DU is indicated by a dotted line.

  Further, in the present embodiment, the blocking space AT1 located between the chamber outer space CLS and the processing space AT2 is formed by the first outer wall OW1 and the inner wall IW provided inside the first outer wall OW1, The blocking space AT1 may be formed by the first outer wall OW1 and the new wall by providing a new wall outside the one outer wall OW1.

  Even in this case, it is necessary to newly provide a downflow forming means such as a duct in order to form a downflow in the blocking space AT1. Further, it is necessary to connect a pipe for sucking the atmosphere in the blocking space AT1.

  Further, in the above-described embodiment, the maintenance cover MD and the inner wall cover IID are configured separately, but they may be configured integrally.

  In the above-described embodiment, both the maintenance cover MD that can close the opening MO of the first outer wall OW1 and the inner wall cover IID that can close the opening IO of the inner wall IW are provided. Only one of the covers may be used. Even when only one of the covers is provided, the pressure in the blocking space AT1 can be made higher than the pressure in the processing space AT2 and the chamber outer space CLS by blowing air from the fan filter unit FFU into the blocking space AT1. Therefore, it is possible to prevent the chemical atmosphere in the processing space AT2 from leaking into the chamber external space CLS. In addition, the atmosphere of the chamber external space CLS is prevented from flowing into the processing space AT2.

  In the above embodiment, the inner wall IW is formed only inside the first outer wall that forms the processing chambers CHa to CHd. However, the inner wall is provided inside the entire outer wall that forms the processing chambers CHa to CHd. It may be.

(6) Effect In the substrate processing apparatus 100 according to the present embodiment, the openings MO and IO can be opened by the operator removing the maintenance cover MD and the inner wall cover IID. Thereby, the operator can perform maintenance of the configuration in the processing chamber CHc from the chamber outer space CLS.

  The control unit 4 compares the pressures in the chamber external space CLS, the blocking space AT1, and the processing space AT2 obtained by the pressure sensors p1, p2, and p3, so that the pressure in the blocking space AT1 is the highest. Control the operation of the first suction device 220 of ~ 2d.

  As a result, the atmosphere of the processing space AT2 and the atmosphere of the chamber external space CLS do not flow into the blocking space AT1. Thereby, the atmosphere of the processing space AT2 and the atmosphere of the chamber external space CLS are blocked by the blocking space AT1.

  Therefore, the atmosphere of the processing space AT2 is sufficiently prevented from leaking into the chamber external space CLS. As a result, it is possible to prevent the atmosphere of the processing space AT2 from adversely affecting the human body of the worker who works around the substrate processing apparatus 100.

  Further, the peripheral equipment of the substrate processing apparatus 100 provided in the chamber external space CLS is prevented from being corroded by the atmosphere of the processing space AT2. Furthermore, the atmosphere of the processing space AT2 is prevented from coming into contact with the substrate W transported in the chamber external space CLS and adversely affecting the substrate W.

  In addition to the above, since the atmosphere of the processing space AT2 and the atmosphere of the chamber external space CLS are blocked by the blocking space AT1, the atmosphere of the chamber external space CLS is prevented from flowing into the processing space AT2. This prevents particles such as dust contained in the atmosphere of the chamber outer space CLS from entering the processing space AT2. As a result, processing defects on the substrate W are sufficiently prevented.

(7) Chemical solution used for substrate processing apparatus In the present embodiment, BHF is used for etching and cleaning the surface of the substrate W, for example. Other chemical examples are shown below.

  As the chemical solution, a solution containing ammonium fluoride for removing the polymer formed on the surface of the substrate W, for example, a mixed solution containing ammonium fluoride and phosphoric acid can be used.

  Also, an alkaline solution such as TMAH (tetramethylammonium hydroxide) or an acidic solution such as butyl acetate for developing the substrate W can be used as the chemical solution.

  Further, sulfuric acid / hydrogen peroxide or ozone water for removing the resist formed on the surface of the substrate W can be used as the chemical solution.

  Also, BHF, DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, ammonia, citric acid, hydrogen peroxide solution or TMAH for etching or cleaning the surface of the substrate W An aqueous solution such as the above or a mixed solution thereof can be used as the chemical solution.

  In the present embodiment, the cleaning process of the substrate W with a chemical solution is described. However, the process performed in the processing chambers CHa to CHd is performed by the adhesion of the resist to the substrate W before the resist is applied onto the substrate W. It may include an adhesion strengthening treatment for applying an adhesion enhancer for improving the adhesion. As the adhesion enhancer, for example, HMDS (hexamethylene disilazane) is used.

(8) Correspondence relationship between each constituent element of claim and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each part of the embodiment will be described. It is not limited.

  As described above, in the embodiment of the present invention, the outer wall and the first to third outer walls OW1 to OW3 correspond to the partition walls or the outer wall, the processing chambers CHa to CHd correspond to the processing unit, the control unit 4, and the fan filter unit. The FFU, the first suction device 220, and the second suction device 260 correspond to pressure adjusting means.

  The maintenance cover MD corresponds to an opening / closing member, the inner wall IW corresponds to an inner wall, the chamber outer space CLS corresponds to a space outside the outer wall, the fan filter unit FFU corresponds to an air flow generating means, and the first The suction device 220 corresponds to the first suction means.

  Further, the second suction device 260 corresponds to the second suction means, the open / close sensor ds1 corresponds to the open detection means, the control unit 4 corresponds to the control means, and the pressure sensors p1, p2, and p3 respectively 3 corresponds to a pressure detection means, a first pressure detection means, and a second pressure detection means.

  The substrate processing apparatus according to the present invention can be used for manufacturing a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a glass substrate for an optical disk, and the like.

1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. It is an external appearance perspective view which shows the assembly condition of the substrate processing apparatus of FIG. It is a figure for demonstrating the structure of the cleaning process part of the substrate processing apparatus which concerns on one embodiment of this invention. It is the SS sectional view taken on the line of the washing | cleaning process part in the substrate processing apparatus of FIG. It is a figure for demonstrating the detail of the pressure regulation in the processing chamber of FIG. 4, and its effect. It is a block diagram which shows the structure of the control system of the substrate processing apparatus of FIG. It is a figure which shows the other structural example of the inner wall of FIG.

Explanation of symbols

4 Control Unit 100 Substrate Processing Device 220 First Suction Device 260 Second Suction Device AT1 Blocking Space AT2 Processing Space CHa-CHd Processing Chamber CLS Chamber External Space ds1, ds2 Open / Close Sensor FFU Fan Filter Unit IW Inner Wall MD Maintenance Cover MO Openings OW1 to OW3 First to third outer walls p1, p2, p3 Pressure sensor W substrate

Claims (13)

A substrate processing apparatus for processing a substrate in a processing section surrounded by a partition wall,
An inner wall provided in at least a part of the partition wall and formed with a first opening;
An outer wall provided outside the inner wall and having a second opening formed outside the first opening;
An opening / closing member capable of closing and opening at least one of the first opening and the second opening;
Pressure adjustment for adjusting the pressure of the blocking space formed between the inner wall and the outer wall to be higher than the pressure of the processing space surrounded by the partition wall and the inner wall and the pressure of the space outside the outer wall And a substrate processing apparatus. The pressure adjusting means is configured to reduce the pressure of the blocking space to the pressure of the processing space and the outside of the outer wall in a state where at least one of the first and second openings that can be closed and opened by the opening / closing member is closed. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is adjusted to be higher than the pressure in the space. The pressure adjusting means is configured to set the pressure of the processing space to be higher than the pressure of the space outside the outer wall in a state where at least one of the first and second openings that can be closed and opened by the opening / closing member is closed. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is adjusted to be high. The pressure adjusting means is configured to set the pressure of the processing space to be higher than the pressure of the space outside the outer wall in a state where at least one of the first and second openings that can be closed and opened by the opening / closing member is opened. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is adjusted to be low. The said pressure adjustment means contains the airflow generation means which raises the pressure of the said interruption | blocking space and the said process space by generating a downward flow in the said interruption | blocking space and the said process space, The Claims 1-4 characterized by the above-mentioned. The substrate processing apparatus according to any one of the above. 6. The substrate processing apparatus according to claim 5, wherein the pressure adjusting means includes first suction means for lowering the pressure of the blocking space by sucking the atmosphere of the blocking space. The substrate processing apparatus according to claim 5, wherein the pressure adjusting unit includes a second suction unit that lowers the pressure of the processing space by sucking the atmosphere of the processing space. An opening detecting means for detecting opening of at least one of the first and second openings that can be closed and opened by the opening and closing member;
In a state in which at least one of the first and second openings that can be closed and opened by the opening / closing member is opened, the second suction unit is operated, and at least one of the opening detection units is opened by the opening detection unit. The substrate processing apparatus according to claim 7, further comprising a control unit that stops the airflow generation unit based on the detection. First pressure detecting means for detecting the pressure in the blocking space;
Second pressure detecting means for detecting the pressure in the processing space;
Further comprising third pressure detecting means for detecting the pressure of the space outside the outer wall,
The pressure adjusting means adjusts the pressure in the blocking space and the pressure in the processing space based on pressures detected by the first, second, and third pressure detecting means. The substrate processing apparatus according to claim 8. The substrate processing apparatus according to claim 1, wherein the outer wall is formed integrally with the partition wall. The substrate processing apparatus according to claim 1, wherein the inner wall is formed integrally with the partition wall. The substrate processing apparatus according to claim 1, wherein the opening / closing member is capable of closing and opening both the first opening and the second opening. The opening / closing member includes a first lid member that can close and open the first opening, and a second lid member that can close and open the second opening, The substrate processing apparatus according to claim 12, wherein the one lid member has a shape capable of passing through the second opening.

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