JP2007265841A - El装置 - Google Patents
El装置 Download PDFInfo
- Publication number
- JP2007265841A JP2007265841A JP2006090459A JP2006090459A JP2007265841A JP 2007265841 A JP2007265841 A JP 2007265841A JP 2006090459 A JP2006090459 A JP 2006090459A JP 2006090459 A JP2006090459 A JP 2006090459A JP 2007265841 A JP2007265841 A JP 2007265841A
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- 239000010410 layer Substances 0.000 claims abstract description 203
- 238000007789 sealing Methods 0.000 claims abstract description 164
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000012044 organic layer Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- -1 lanthanoid fluoride Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】基板を有するEL装置であって、前記基板上に、発光層を含む有機層を有する有機EL素子部と、前記有機EL素子部を封止する封止部とを備え、前記封止部は、封止性を有する第1封止層および第2封止層と、前記第1封止層と前記第2封止層との間に介挿された中間層とからなる3層構造を有しており、前記中間層は、等方性の多結晶構造を有している。
【選択図】図1
Description
・上記の実施形態においては、第1電極層11をアノード電極として第2電極層13をカソード電極として利用するのは必須でなく、これらを入れ替えても良い。
2 基板
3 封止部
10 有機EL素子部
11 第1電極層
12 有機層
13 第2電極層
31 第1封止層
32 中間層
33 第2封止層
Claims (6)
- 基板を有するEL装置であって、
前記基板上に、
発光層を含む有機層を有する有機EL素子部と、
前記有機EL素子部を封止する封止部と、
を備え、
前記封止部は、封止性を有する第1封止層および第2封止層と、前記第1封止層と前記第2封止層との間に介挿された中間層とからなる3層構造を有しており、
前記中間層は、等方性の多結晶構造を有していることを特徴とするEL装置。 - 請求項1に記載のEL装置において、
前記中間層は、金属フッ化物を主成分として形成されていることを特徴とするEL装置。 - 請求項1または請求項2に記載のEL装置において、
前記第1封止層と前記第2封止層とは、アモルファス構造を有していることを特徴とするEL装置。 - 請求項3に記載のEL装置において、
前記第1封止層と前記第2封止層とは、窒化ケイ素を主成分として形成されていることを特徴とするEL装置。 - 請求項4に記載のEL装置において、
前記中間層の屈折率は、1.6以上2.0以下であることを特徴とするEL装置。 - 請求項1ないし請求項4のいずれかに記載のEL装置において、
前記中間層は、前記第1封止層および前記第2封止層と略等しい屈折率を有することを特徴とするEL装置。
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JP2006090459A JP4722746B2 (ja) | 2006-03-29 | 2006-03-29 | El装置 |
Applications Claiming Priority (1)
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JP2006090459A JP4722746B2 (ja) | 2006-03-29 | 2006-03-29 | El装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007265841A true JP2007265841A (ja) | 2007-10-11 |
JP4722746B2 JP4722746B2 (ja) | 2011-07-13 |
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JP (1) | JP4722746B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012036460A (ja) * | 2010-08-09 | 2012-02-23 | Fujifilm Corp | 非晶質窒化珪素膜とその製造方法、ガスバリア性フィルム、並びに、有機エレクトロルミネッセンス素子とその製造方法および封止方法 |
JP2014514703A (ja) * | 2011-04-08 | 2014-06-19 | サン−ゴバン パフォーマンス プラスティックス コーポレイション | 影響を受けやすい素子を封入するための多層構成要素 |
KR20140128308A (ko) * | 2012-02-21 | 2014-11-05 | 린텍 가부시키가이샤 | 유기 전자 소자 및 유기 전자 소자의 제조 방법 |
CN104584253A (zh) * | 2012-05-15 | 2015-04-29 | 欧司朗Oled股份有限公司 | 有机发光器件和用于制造有机发光器件的方法 |
US9246131B2 (en) | 2009-09-10 | 2016-01-26 | Saint-Gobain Performance Plastics Corporation | Layered element for encapsulating a senstive element |
US9966569B2 (en) | 2015-03-31 | 2018-05-08 | Seiko Epson Corporation | Organic light emission apparatus and electronic equipment |
Citations (11)
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---|---|---|---|---|
JPH04212284A (ja) * | 1990-04-27 | 1992-08-03 | Toppan Printing Co Ltd | 有機薄膜el素子 |
JPH0917572A (ja) * | 1995-06-26 | 1997-01-17 | Hewlett Packard Co <Hp> | 薄膜エレクトロルミネセンス素子のシール形成方法及びエレクトロルミネセンス素子 |
JPH113781A (ja) * | 1997-06-12 | 1999-01-06 | Toppan Printing Co Ltd | 有機薄膜el素子 |
JP2003092180A (ja) * | 2001-09-18 | 2003-03-28 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子 |
JP2003100450A (ja) * | 2001-06-20 | 2003-04-04 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2003142262A (ja) * | 2001-11-06 | 2003-05-16 | Seiko Epson Corp | 電気光学装置、膜状部材、積層膜、低屈折率膜、多層積層膜、電子機器 |
JP2003203771A (ja) * | 2002-01-09 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 有機発光素子、表示装置及び照明装置 |
JP2004022281A (ja) * | 2002-06-14 | 2004-01-22 | Denso Corp | 有機el素子 |
JP2005319744A (ja) * | 2004-05-11 | 2005-11-17 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2006004917A (ja) * | 2004-05-20 | 2006-01-05 | Semiconductor Energy Lab Co Ltd | 発光素子及び表示装置 |
JP2006019022A (ja) * | 2004-06-30 | 2006-01-19 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
-
2006
- 2006-03-29 JP JP2006090459A patent/JP4722746B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04212284A (ja) * | 1990-04-27 | 1992-08-03 | Toppan Printing Co Ltd | 有機薄膜el素子 |
JPH0917572A (ja) * | 1995-06-26 | 1997-01-17 | Hewlett Packard Co <Hp> | 薄膜エレクトロルミネセンス素子のシール形成方法及びエレクトロルミネセンス素子 |
JPH113781A (ja) * | 1997-06-12 | 1999-01-06 | Toppan Printing Co Ltd | 有機薄膜el素子 |
JP2003100450A (ja) * | 2001-06-20 | 2003-04-04 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2003092180A (ja) * | 2001-09-18 | 2003-03-28 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子 |
JP2003142262A (ja) * | 2001-11-06 | 2003-05-16 | Seiko Epson Corp | 電気光学装置、膜状部材、積層膜、低屈折率膜、多層積層膜、電子機器 |
JP2003203771A (ja) * | 2002-01-09 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 有機発光素子、表示装置及び照明装置 |
JP2004022281A (ja) * | 2002-06-14 | 2004-01-22 | Denso Corp | 有機el素子 |
JP2005319744A (ja) * | 2004-05-11 | 2005-11-17 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2006004917A (ja) * | 2004-05-20 | 2006-01-05 | Semiconductor Energy Lab Co Ltd | 発光素子及び表示装置 |
JP2006019022A (ja) * | 2004-06-30 | 2006-01-19 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9246131B2 (en) | 2009-09-10 | 2016-01-26 | Saint-Gobain Performance Plastics Corporation | Layered element for encapsulating a senstive element |
JP2012036460A (ja) * | 2010-08-09 | 2012-02-23 | Fujifilm Corp | 非晶質窒化珪素膜とその製造方法、ガスバリア性フィルム、並びに、有機エレクトロルミネッセンス素子とその製造方法および封止方法 |
CN108258138A (zh) * | 2011-04-08 | 2018-07-06 | 美国圣戈班性能塑料公司 | 用于敏感元件的封装的多层部件 |
JP2014514703A (ja) * | 2011-04-08 | 2014-06-19 | サン−ゴバン パフォーマンス プラスティックス コーポレイション | 影響を受けやすい素子を封入するための多層構成要素 |
CN108258138B (zh) * | 2011-04-08 | 2021-04-09 | 美国圣戈班性能塑料公司 | 用于敏感元件的封装的多层部件 |
JP2017107855A (ja) * | 2011-04-08 | 2017-06-15 | サン−ゴバン パフォーマンス プラスティックス コーポレイション | 影響を受けやすい素子を封入するための多層構成要素 |
US10036832B2 (en) | 2011-04-08 | 2018-07-31 | Saint-Gobain Performance Plastics Corporation | Multilayer component for the encapsulation of a sensitive element |
KR20140128308A (ko) * | 2012-02-21 | 2014-11-05 | 린텍 가부시키가이샤 | 유기 전자 소자 및 유기 전자 소자의 제조 방법 |
KR102039390B1 (ko) * | 2012-02-21 | 2019-11-04 | 린텍 가부시키가이샤 | 유기 전자 소자 및 유기 전자 소자의 제조 방법 |
US9419244B2 (en) | 2012-05-15 | 2016-08-16 | Osram Oled Gmbh | Organic light-emitting element and method of producing an organic light-emitting element |
US9685633B2 (en) | 2012-05-15 | 2017-06-20 | Osram Oled Gmbh | Organic light-emitting element and method of producing an organic light-emitting element |
JP2015520485A (ja) * | 2012-05-15 | 2015-07-16 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | 有機発光素子および有機発光素子の製造方法 |
CN104584253A (zh) * | 2012-05-15 | 2015-04-29 | 欧司朗Oled股份有限公司 | 有机发光器件和用于制造有机发光器件的方法 |
US9966569B2 (en) | 2015-03-31 | 2018-05-08 | Seiko Epson Corporation | Organic light emission apparatus and electronic equipment |
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