JP2007258691A5 - - Google Patents

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Publication number
JP2007258691A5
JP2007258691A5 JP2007038802A JP2007038802A JP2007258691A5 JP 2007258691 A5 JP2007258691 A5 JP 2007258691A5 JP 2007038802 A JP2007038802 A JP 2007038802A JP 2007038802 A JP2007038802 A JP 2007038802A JP 2007258691 A5 JP2007258691 A5 JP 2007258691A5
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JP
Japan
Prior art keywords
laser
optical element
diffractive optical
laser beam
irradiated
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Application number
JP2007038802A
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English (en)
Japanese (ja)
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JP2007258691A (ja
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Priority to JP2007038802A priority Critical patent/JP2007258691A/ja
Priority claimed from JP2007038802A external-priority patent/JP2007258691A/ja
Publication of JP2007258691A publication Critical patent/JP2007258691A/ja
Publication of JP2007258691A5 publication Critical patent/JP2007258691A5/ja
Withdrawn legal-status Critical Current

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JP2007038802A 2006-02-21 2007-02-20 レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法 Withdrawn JP2007258691A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007038802A JP2007258691A (ja) 2006-02-21 2007-02-20 レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006044201 2006-02-21
JP2007038802A JP2007258691A (ja) 2006-02-21 2007-02-20 レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2007258691A JP2007258691A (ja) 2007-10-04
JP2007258691A5 true JP2007258691A5 (enExample) 2010-04-02

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ID=38632575

Family Applications (1)

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JP2007038802A Withdrawn JP2007258691A (ja) 2006-02-21 2007-02-20 レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法

Country Status (1)

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JP (1) JP2007258691A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009178843A (ja) 2006-08-22 2009-08-13 Rynne Group Llc 識別カードおよびその識別カードを使用した識別カード取引システム
US7768627B2 (en) * 2007-06-14 2010-08-03 Asml Netherlands B.V. Illumination of a patterning device based on interference for use in a maskless lithography system
JP5267029B2 (ja) * 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
CN101681123B (zh) * 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20100105649A (ko) * 2007-12-17 2010-09-29 가부시키가이샤 니콘 공간 광 변조 유닛, 조명 광학계, 노광 장치, 및 디바이스 제조 방법
WO2009104272A1 (ja) * 2008-02-22 2009-08-27 リン グループ エルエルシー 識別カードを使用した総合取引システム
US8823921B2 (en) * 2011-08-19 2014-09-02 Ultratech, Inc. Programmable illuminator for a photolithography system
US10522472B2 (en) * 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US20180068047A1 (en) * 2016-09-08 2018-03-08 Mapper Lithography Ip B.V. Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
US10418324B2 (en) * 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
JP2020098866A (ja) * 2018-12-18 2020-06-25 株式会社ブイ・テクノロジー レーザアニール装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228818A (ja) * 2001-02-05 2002-08-14 Taiyo Yuden Co Ltd レーザー加工用回折光学素子、レーザー加工装置及びレーザー加工方法
JP4279053B2 (ja) * 2002-06-07 2009-06-17 富士フイルム株式会社 露光ヘッド及び露光装置
JP2004062156A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd 露光ヘッド及び露光装置
JP4338434B2 (ja) * 2002-06-07 2009-10-07 富士フイルム株式会社 透過型２次元光変調素子及びそれを用いた露光装置
JP4323335B2 (ja) * 2004-01-21 2009-09-02 富士フイルム株式会社 画像露光方法および装置
JP4162606B2 (ja) * 2004-01-26 2008-10-08 富士フイルム株式会社 光変調素子、光変調素子アレイ、及び画像形成装置
JP4497382B2 (ja) * 2004-03-02 2010-07-07 住友重機械工業株式会社 レーザ照射装置
JP2005275325A (ja) * 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 画像露光装置
JP2006108465A (ja) * 2004-10-07 2006-04-20 Nikon Corp 光学特性計測装置及び露光装置
JP5178022B2 (ja) * 2006-02-03 2013-04-10 株式会社半導体エネルギー研究所 記憶素子の作製方法

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