JP2007258691A5

JP2007258691A5 -

Info

Publication number: JP2007258691A5
Application number: JP2007038802A
Authority: JP
Filing date: 2007-02-20
Publication date: 2010-04-02

Claims

And Les chromatography The oscillator, a diffraction optical element, a laser irradiation apparatus having a micromirror multiple, and conveyance stage, and
The laser beam emitted from the laser oscillator is split into a plurality of laser beams by the diffractive optical element, and is incident so as to be condensed between the central part or the central part and the corners of the plurality of micromirrors. A laser irradiation apparatus which is deflected by a plurality of micromirrors so as to irradiate an irradiated object placed on the transfer stage.

In claim 1,
The diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

In claim 1,
The diffractive optical element is any one of a binary phase grating, a multipole phase grating, and a continuous phase grating.

In any one of Claim 1 thru | or 3 ,
The laser irradiation apparatus according to claim 1, wherein the plurality of divided laser beams have equal energy.

Any one to Oite of claims 1 to 4,
A laser irradiation apparatus comprising a projection lens disposed between the diffractive optical element and the transfer stage.

Any one to Oite of claims 1 to 5,
Spot size of the focused beam laser beam, a laser irradiation apparatus, wherein the O surface area of the micro mirror remote small.

The laser beam emitted from the laser oscillator is incident on the diffractive optical element and divided into a plurality of parts,
Laser in a plurality of micro-mirrors to split the laser beam into the plurality, is incident to the condenser between a respective central portion or central portion corner deflection to and irradiating the irradiated body Irradiation method.

Oite to claim 7,
The condensing laser beams, laser irradiation method, characterized in that less than the surface area of the micro mirror.

The laser beam emitted from the laser oscillator is incident on the diffractive optical element and divided into a plurality of parts,
One laser beam of the plurality of divided laser beams is incident on the first micromirror so as to be condensed between the central portion or the central portion and the corner and deflected, and the laser beam is irradiated. Irradiate on the body,
In another one of the second micro-mirror laser beam of the split laser beams to said plurality of deflected incident to focused between the central portion or central portion corners, the laser beam laser irradiation method, which comprises irradiating the object to be irradiated.

In claim 7 or claim 9 ,
The laser irradiation method, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

Any one to Oite of claims 7 to 11,
The laser irradiation method, wherein the plurality of divided laser beams have equal energy.

Any one to Oite of claims 7 to 11,
Said plurality of divided laser beam, and the diffraction optical element passes through the arrangement projection lens between the transport stage irradiated object is placed, said to be irradiated onto the object to be irradiated A laser irradiation method characterized by the above.

Forming an island-shaped semiconductor layer of the multiple on the substrate,
Forming a first interlayer insulating film on the plurality of island-shaped semiconductor layers;
Forming a gate electrode on each of the plurality of island-like semiconductor layers via the first interlayer insulating film;
Forming a second interlayer insulating film on the gate electrode;
Providing a resist on the second interlayer insulating film;
Irradiating the resist with each laser beam that has been divided into a plurality of parts through the diffractive optical element and incident and deflected so as to be condensed between the center or the center and corners of the plurality of micromirrors,
Developing the resist irradiated with the laser beam;
A method for manufacturing a semiconductor device, wherein contact holes are selectively formed by etching the first interlayer insulating film and the second interlayer insulating film using the resist as a mask.