JP2007254785A - Si-CONTAINING COMPOUND NITRIDE FILM, AND COATED CUTTING TOOL - Google Patents
Si-CONTAINING COMPOUND NITRIDE FILM, AND COATED CUTTING TOOL Download PDFInfo
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- -1 COMPOUND NITRIDE Chemical class 0.000 title claims abstract 4
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims description 36
- 239000002131 composite material Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 2
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 45
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019819 Cr—Si Inorganic materials 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 102220033831 rs145989498 Human genes 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本発明は、硬質被膜と、チップ,ドリル,エンドミルなどの基材に硬質被膜を被覆した被覆切削工具に関する。 The present invention relates to a hard coating and a coated cutting tool in which a hard coating is coated on a base material such as a chip, a drill, or an end mill.
切削工具に使用される硬質被膜としては、(Ti,Al)N,(Ti,Cr)N,(Ti,Si)Nなどの多元系の複合窒化物膜がある。これらの中でもSiを含有した多元系の複合窒化物膜は、耐摩耗性や耐酸化性に優れる。 As hard coatings used for cutting tools, there are multi-component composite nitride films such as (Ti, Al) N, (Ti, Cr) N, and (Ti, Si) N. Among these, a multi-component composite nitride film containing Si is excellent in wear resistance and oxidation resistance.
Siを含有した複合窒化物膜としては、(Al,Ti,Si)(B,N)系膜がある(例えば、特許文献1参照。)。また、Si含有の複合窒化物膜を被覆した切削工具としては、(Ti,Al,Si)(C,N)系膜を被覆した高機能加工用工具がある(例えば、特許文献2参照。)。さらに、Siに富むアモルファス相とSiに乏しい結晶質とからなる(Ti,Al)(C,N,O,B)膜を被覆した硬質皮膜被覆工具がある(例えば、特許文献3参照。)。fccの結晶構造を含む(Cr,Al,Si)(N,B,C,O)膜を被覆した硬質皮膜被覆工具がある(例えば、特許文献4参照。)。 As a composite nitride film containing Si, there is an (Al, Ti, Si) (B, N) -based film (see, for example, Patent Document 1). In addition, as a cutting tool coated with a Si-containing composite nitride film, there is a high-function processing tool coated with a (Ti, Al, Si) (C, N) -based film (for example, see Patent Document 2). . Furthermore, there is a hard coating tool that is coated with a (Ti, Al) (C, N, O, B) film composed of a Si-rich amorphous phase and a Si-poor crystalline material (see, for example, Patent Document 3). There is a hard film coated tool coated with a (Cr, Al, Si) (N, B, C, O) film containing an fcc crystal structure (for example, see Patent Document 4).
これらの公報に記載された被覆切削工具は、被膜へのSi添加によって硬さ、耐摩耗性、耐酸化性などが改善されるものの、被膜自体の強度低下や切削時の熱応力発生によって被膜のチッピングや剥離が起こり易いために、Si添加の効果を十分に引き出していないと言う問題がある。 Although the coated cutting tools described in these publications are improved in hardness, wear resistance, oxidation resistance, etc. by adding Si to the coating, the coating of the cutting tool is reduced due to a decrease in strength of the coating itself or generation of thermal stress during cutting. Since chipping and peeling are likely to occur, there is a problem that the effect of Si addition is not sufficiently extracted.
断続切削加工における高速化,難削材化,寿命延長に対応するため、PVD被覆工具への改善要求が高まっている。上述のような問題を有する従来のSi含有複合窒化物膜を被覆した被覆切削工具では、こうした要求に応えられなくなってきた。そこで、本発明は、耐酸化性,耐溶着性などのSi含有複合窒化物膜の特長を活かしつつ、結晶構造を制御することによって、膜の耐チッピング性を向上させたSi含有複合窒化物膜およびそれらを被覆した被覆切削工具の提供を目的とする。 There is an increasing demand for improvement of PVD-coated tools in order to cope with high speed, difficult-to-cut materials, and extended life in intermittent cutting. A conventional coated cutting tool coated with a Si-containing composite nitride film having the above-mentioned problems cannot meet such demands. Accordingly, the present invention provides a Si-containing composite nitride film that improves the chipping resistance of the film by controlling the crystal structure while utilizing the features of the Si-containing composite nitride film such as oxidation resistance and welding resistance. It is another object of the present invention to provide a coated cutting tool coated with them.
本発明者は、Si含有複合窒化物膜を被覆した被覆切削工具の耐チッピング性の改善について検討していた所、Si含有複合窒化物膜の金属元素の原子比を所定の割合にすると立方晶と六方晶とが共存すること、立方晶と六方晶との共存領域では相互分散強化によってSi含有複合窒化物膜自体の靱性は向上すること、共存領域のSi含有複合窒化物膜を加熱すると六方晶は立方晶に相変態して硬さが向上すると共に熱応力が緩和されること、すなわち、所定の組成のSi含有複合窒化物膜は切削刃先において熱によって硬化する性質と熱応力を緩和する機能を有すること、これらの効果によって被覆切削工具の耐チッピング性と耐摩耗性が向上するため、工具寿命が大幅に改善されると言う知見を得て本発明を完成するに至ったものである。 The present inventor has been studying improvement of chipping resistance of a coated cutting tool coated with a Si-containing composite nitride film. When the atomic ratio of the metal elements of the Si-containing composite nitride film is set to a predetermined ratio, cubic crystals are obtained. Coexistence of hexagonal and hexagonal crystals, the toughness of the Si-containing composite nitride film itself is improved by mutual dispersion strengthening in the coexisting region of cubic and hexagonal crystals, and hexagonal when the Si-containing composite nitride film in the coexisting region is heated. The crystal transforms into a cubic crystal and the hardness is improved and the thermal stress is relieved, that is, the Si-containing composite nitride film having a predetermined composition relieves the property of being hardened by heat and the thermal stress at the cutting edge. It has the function, and the chipping resistance and wear resistance of the coated cutting tool are improved by these effects, and thus the present invention has been completed by obtaining the knowledge that the tool life is greatly improved.
すなわち、本発明のSi含有複合窒化物膜は、SiとTiとAlとCrとNとを含有し、立方晶と六方晶とからなり、X線回折測定における立方晶の(111)面,(200)面のX線ピーク強度をそれぞれIc(111),Ic(200)と表し、六方晶の(100)面,(002)面のX線ピーク強度をそれぞれIh(100),Ih(002)と表したとき、X線ピーク強度比:〔Ih(100)+Ih(002)〕/〔Ih(100)+Ih(002)+Ic(111)+Ic(200)〕が0.4〜0.7である。本発明のX線ピーク強度比は、X線回折図形に現れるSi含有複合窒化物膜の立方晶の(111)面と(200)面のX線ピーク強度の和と、Si含有複合窒化物膜の六方晶の(100)面と(002)面のX線ピーク強度の和とを用いて両結晶の存在割合を定義したものである。本発明のX線ピーク強度比が0.4未満ではSi含有複合窒化物膜自体の靱性が低くて耐チッピング性を改善する効果が少なく、逆に0.7を超えて大きくなると硬さの低下が顕著となって耐摩耗性に劣る。 That is, the Si-containing composite nitride film of the present invention contains Si, Ti, Al, Cr, and N, and is composed of cubic and hexagonal crystals. The cubic (111) plane in the X-ray diffraction measurement, ( The X-ray peak intensities of the (200) plane are represented as Ic (111) and Ic (200), respectively, and the X-ray peak intensities of the hexagonal (100) plane and (002) plane are Ih (100) and Ih (002), respectively. X-ray peak intensity ratio: [Ih (100) + Ih (002)] / [Ih (100) + Ih (002) + Ic (111) + Ic (200)] is 0.4 to 0.7. . The X-ray peak intensity ratio of the present invention is the sum of the X-ray peak intensities of the cubic (111) plane and (200) plane of the Si-containing composite nitride film appearing in the X-ray diffraction pattern, and the Si-containing composite nitride film. The abundance ratio of both crystals is defined using the sum of the X-ray peak intensities of the (100) plane and the (002) plane of the hexagonal crystal. When the X-ray peak intensity ratio of the present invention is less than 0.4, the Si-containing composite nitride film itself has low toughness and little effect of improving chipping resistance, and conversely, when it exceeds 0.7, the hardness decreases. Becomes noticeable and inferior in wear resistance.
本発明のSi含有複合窒化物膜は、非酸化性雰囲気中で1000℃に1時間保持した後、含有される六方晶の複合窒化物が立方晶に相変態すると好ましい。具体的には、加熱によってX線回折におけるピーク強度比:〔Ih(100)+Ih(002)〕/〔Ih(100)+Ih(002)+Ic(111)+Ic(200)〕が0.4未満となると、硬さが向上すると共に熱応力が緩和され、耐摩耗性と耐チッピング性が改善されるので好ましい。 The Si-containing composite nitride film of the present invention is preferably kept in a non-oxidizing atmosphere at 1000 ° C. for 1 hour, and then the contained hexagonal composite nitride is transformed into a cubic crystal. Specifically, the peak intensity ratio in X-ray diffraction by heating: [Ih (100) + Ih (002)] / [Ih (100) + Ih (002) + Ic (111) + Ic (200)] is less than 0.4. This is preferable because the hardness is improved and the thermal stress is relaxed, and the wear resistance and chipping resistance are improved.
さらに、Si含有複合窒化物膜は、その組成を(Ti1-a-b-c-dAlaCrbSicMd)N(但し、MはZr,Hf,V,Nb,Ta,Mo,Wの中の少なくとも1種を示し、aはTiとAlとCrとSiとMの合計に対するAlの原子比を示し、bはTiとAlとCrとSiとMの合計に対するCrの原子比を示し、cはTiとAlとCrとSiとMの合計に対するSiの原子比を示し、dはTiとAlとCrとSiとMの合計に対するMの原子比を示す。)と表したとき、a,b,c,dはそれぞれ、0.50≦a≦0.65、0.05≦b≦0.25、0.05≦c≦0.15、0≦d≦0.10、0.7≦a+b+c+d≦0.9を満足すると、立方晶と六方晶とが共存するので好ましい。金属元素の合計に対するAlの割合を示すaは、0.50未満では六方晶が形成され難く、逆に0.65を超えて大きくなると立方晶が形成され難くなる。Crの割合を示すbは、0.05未満では立方晶を形成する効果が少なく、0.25を超えて大きくなると六方晶が形成され難くなる。また、Siの割合を示すcは、0.05未満では硬さや耐酸化性を改善する効果が不十分であり、逆に0.15を超えて大きくなると六方晶やアモルファスが形成され易くなる。Mの割合を示すdは、0.10を超えて大きくなると立方晶が形成され難くなる。さらに、Al,Si,Cr,Mの総和を示すa+b+c+dは、0.7未満では相対的にTiが増加して六方晶が形成され難く、逆に0.9を超えて大きくなると立方晶が形成され難くなる。 Furthermore, Si-containing composite nitride film, the composition (Ti 1-abcd Al a Cr b Si c M d) N ( where, M is Zr, Hf, V, Nb, Ta, Mo, at least in the W 1 represents one, a represents the atomic ratio of Al to the sum of Ti, Al, Cr, Si and M, b represents the atomic ratio of Cr to the sum of Ti, Al, Cr, Si and M, and c represents Ti And the atomic ratio of Si to the sum of Al, Cr, Si and M, and d represents the atomic ratio of M to the sum of Ti, Al, Cr, Si and M). , D are 0.50 ≦ a ≦ 0.65, 0.05 ≦ b ≦ 0.25, 0.05 ≦ c ≦ 0.15, 0 ≦ d ≦ 0.10, 0.7 ≦ a + b + c + d ≦ 0, respectively. .9 is preferable because cubic and hexagonal crystals coexist. When a, which indicates the ratio of Al to the total of the metal elements, is less than 0.50, hexagonal crystals are difficult to form, and conversely, when it exceeds 0.65, cubic crystals are difficult to form. When b indicating the ratio of Cr is less than 0.05, the effect of forming cubic crystals is small, and when it exceeds 0.25, hexagonal crystals are hardly formed. Further, if c, which indicates the proportion of Si, is less than 0.05, the effect of improving the hardness and oxidation resistance is insufficient, and conversely, if it exceeds 0.15, hexagonal crystals and amorphous are likely to be formed. When d which shows the ratio of M becomes larger than 0.10, it becomes difficult to form a cubic crystal. Furthermore, if a + b + c + d indicating the sum of Al, Si, Cr, and M is less than 0.7, Ti is relatively increased and a hexagonal crystal is hardly formed. Conversely, when it exceeds 0.9, a cubic crystal is formed. It becomes difficult to be done.
本発明のSi含有複合窒化物膜は、基材の表面に、PVD法により被覆することができる。その中でもアークイオンプレーティング法が好ましい。ターゲット材としてTi−Al−Cr−Si系の合金を用いて、立方晶と六方晶とを共存させるために、ターゲット組成、バイアス電圧、アーク電流、窒素ガスの分圧と流量などを調整すると本発明のSi含有複合窒化物膜を得ることができる。基材としては、超硬合金,サーメット,セラミックス,高速度鋼などの切削工具用硬質材料を挙げることができる。 The Si-containing composite nitride film of the present invention can be coated on the surface of a substrate by a PVD method. Of these, the arc ion plating method is preferable. Using a Ti-Al-Cr-Si-based alloy as a target material and adjusting the target composition, bias voltage, arc current, nitrogen gas partial pressure and flow rate, etc. in order to coexist cubic and hexagonal crystals The Si-containing composite nitride film of the invention can be obtained. Examples of the base material include hard materials for cutting tools such as cemented carbide, cermet, ceramics, and high speed steel.
本発明のSi含有複合窒化物膜を切削工具用硬質材料の基材に被覆した被覆切削工具は、耐チッピング性と耐摩耗性に優れる。本発明の被覆切削工具の被膜は、Si含有複合窒化物膜以外の膜を含んでも好ましい。Si含有複合窒化物膜以外の膜として具体的には、TiC,TiN,Ti(C,N),Ti(C,O),Ti(C,N,O),(Ti,Al)N,(Ti,Si)N,(Ti、Al)(C,N,O),Al2O3,ダイヤモンド,ダイヤモンド状カーボン,cBNなどを挙げることができる。本発明の被覆切削工具に被覆される被膜の平均膜厚は、1〜10μmが好ましい。これは、1μm未満では耐摩耗性に劣り、10μmを超えて大きくなるとチッピングや膜剥離を生じ易くなって寿命が低下するためである。 The coated cutting tool obtained by coating the Si-containing composite nitride film of the present invention on a base material of a hard material for a cutting tool is excellent in chipping resistance and wear resistance. The coating of the coated cutting tool of the present invention preferably includes a film other than the Si-containing composite nitride film. Specifically, as a film other than the Si-containing composite nitride film, TiC, TiN, Ti (C, N), Ti (C, O), Ti (C, N, O), (Ti, Al) N, ( Ti, Si) N, (Ti, Al) (C, N, O), Al 2 O 3 , diamond, diamond-like carbon, cBN, and the like. The average film thickness of the film coated on the coated cutting tool of the present invention is preferably 1 to 10 μm. This is because if the thickness is less than 1 μm, the wear resistance is inferior, and if it exceeds 10 μm, chipping or film peeling tends to occur and the life is shortened.
本発明のSi含有複合窒化物膜は、基材上に被覆した(Ti,Al,Cr,Si)N系膜に含有される立方晶が硬さを保ち、六方晶が靱性を向上させる作用をし、切削時において温度が上昇して六方晶から立方晶への相変態が耐摩耗性と耐チッピング性を同時に改善する作用をしているものである。 In the Si-containing composite nitride film of the present invention, the cubic crystal contained in the (Ti, Al, Cr, Si) N-based film coated on the substrate maintains the hardness, and the hexagonal crystal has the effect of improving the toughness. However, the temperature rises during cutting, and the phase transformation from hexagonal to cubic has the effect of simultaneously improving wear resistance and chipping resistance.
従来の立方晶を主体とするSi含有複合窒化物膜よりも、六方晶を主体とするため本発明のSi含有複合窒化物膜は耐摩耗性と耐チッピング性に優れる。本発明の被覆切削工具は耐摩耗性と耐チッピング性に優れる。そのため工具寿命が長くなるという効果がある。特に断続切削において工具寿命が顕著に長くなる効果がある。 The Si-containing composite nitride film of the present invention is superior in wear resistance and chipping resistance because it is mainly composed of hexagonal crystals than the conventional Si-containing composite nitride film mainly containing cubic crystals. The coated cutting tool of the present invention is excellent in wear resistance and chipping resistance. As a result, the tool life is increased. In particular, there is an effect that the tool life is remarkably increased in intermittent cutting.
基材として、82WC−1TiC−2TaC−6Co(以上重量%)の組成、HRA=91.0の硬さを有する超硬チップ(ISO規格でSNGN120408)をアークイオンプレーティング装置に挿入して1×10-4〜3×10-5Paの真空とした後、超硬チップを500℃に加熱し、Arガスを導入しながら−1000Vのバイアス電圧をかけてスパッタすることにより、チップ表面を十分に洗浄した後、脱気を行った。次いで、表1に示したターゲット組成,バイアス電圧,処理時間の組み合わせ条件でもって順次アーク放電させ、チップ表面に窒化物膜を蒸着することよって、本発明品1〜7と比較品1〜5の被覆チップを得た。なお、第1層と第2層の被膜構成では第1層が超硬チップ側を示し、第1層と第2層と第3層の被膜構成では第1層が超硬チップ側を示す。 As a base material, a carbide tip (SNGN120408 in ISO standard) having a composition of 82WC-1TiC-2TaC-6Co (more than wt%) and a hardness of HRA = 91.0 is inserted into an arc ion plating apparatus and 1 × After forming a vacuum of 10 −4 to 3 × 10 −5 Pa, the carbide chip is heated to 500 ° C. and sputtered by applying a bias voltage of −1000 V while introducing Ar gas, so that the surface of the chip is sufficiently obtained. After washing, deaeration was performed. Then, arc discharge is sequentially performed under the combination conditions of the target composition, bias voltage, and processing time shown in Table 1, and a nitride film is deposited on the chip surface. A coated chip was obtained. In the first layer and second layer coating configurations, the first layer indicates the carbide tip side, and in the first layer, second layer, and third layer coating configurations, the first layer indicates the carbide tip side.
まず、得られた本発明品1〜7と比較品1〜5の被覆チップを切断し、断面を1000#のダイヤモンド砥石で湿式研削加工した後、1μmのダイヤモンドペ−ストでラップ加工した。そして、断面を光学顕微鏡で観察し、被膜の各層ごとの膜厚、被膜全体の平均膜厚を測定した結果を表2に示す First, the coated chips of the present invention products 1 to 7 and comparative products 1 to 5 were cut, and the cross section was wet ground with a 1000 # diamond grindstone and then lapped with a 1 μm diamond paste. And the result of having observed the cross section with the optical microscope and measuring the film thickness for every layer of a film and the average film thickness of the whole film is shown in Table 2.
次に、各被覆チップの表面を薄膜X線回折装置でCuターゲットを用いてX線回折測定を行い、X線回折図形に示される各X線ピークの内、立方晶系窒化物の(111)面と(200)面、および六方晶系窒化物の(100)面と(002)面のX線ピーク強度を求め、立方晶に対する六方晶の存在割合(Ih/(Ih+Ic)と表記)を〔Ih(100)+Ih(002)〕/〔Ih(100)+Ih(002)+Ic(111)+Ic(200)〕と定義して算出した。その結果を表2に併記した。 Next, the surface of each coated chip is subjected to X-ray diffraction measurement using a Cu target with a thin-film X-ray diffractometer, and among the X-ray peaks shown in the X-ray diffraction pattern, cubic nitride (111) The X-ray peak intensities of the (100) and (002) planes of the plane and (200) plane and hexagonal nitride are obtained, and the hexagonal crystal abundance ratio (denoted as Ih / (Ih + Ic)) is expressed as [ Ih (100) + Ih (002)] / [Ih (100) + Ih (002) + Ic (111) + Ic (200)]. The results are also shown in Table 2.
さらに、各被覆チップの表面を1μmのダイヤモンドペーストでラップ仕上げし、マイクロビッカース硬度計を用いて、0.245Nの荷重で硬さを測定した。また、0.98Nの荷重でビッカース圧痕の四角に発生するクラックの状態を観察した。硬さおよびクラックの状態を表2に併記した。 Further, the surface of each coated chip was lapped with 1 μm diamond paste, and the hardness was measured with a load of 0.245 N using a micro Vickers hardness meter. Moreover, the state of the crack which generate | occur | produces in the square of a Vickers indentation with the load of 0.98N was observed. Table 2 shows the hardness and the state of cracks.
表2の結果から、本発明品の被膜はいずれも立方晶と六方晶とが所定の割合で混在し、立方晶あるいは六方晶の比較品より硬さは低いものの、被膜にクラックが発生し難くて靱性が高いことが分かる。 From the results shown in Table 2, the film of the present invention has a mixture of cubic crystals and hexagonal crystals at a predetermined ratio, and although the hardness is lower than that of the comparative product of cubic or hexagonal crystals, cracks are hardly generated in the film. It can be seen that the toughness is high.
実施例1で得られた本発明品1〜7と比較品1〜5の被覆チップを真空炉に挿入し、0.5Paの真空中で1000℃に1時間加熱・保持して冷却した。そして、実施例1と同様にX線ピーク強度と硬さを測定し、その結果を表3に示す。表3の結果から、加熱処理によって比較品のX線ピーク強度と硬さがほとんど変化しないのに対して、本発明品は立方晶が増加し、硬化していることが分かる。 The coated chips of the present invention products 1 to 7 and comparative products 1 to 5 obtained in Example 1 were inserted into a vacuum furnace, and cooled by heating and holding at 1000 ° C. for 1 hour in a vacuum of 0.5 Pa. Then, the X-ray peak intensity and hardness were measured in the same manner as in Example 1, and the results are shown in Table 3. From the results in Table 3, it can be seen that the X-ray peak intensity and hardness of the comparative product hardly change by heat treatment, whereas the product of the present invention has increased cubic crystals and is cured.
実施例1で得られた本発明品2,3,4,5および比較品1,2,3,5の各被覆チップを用いて被削材:S48C(4本溝入り),切削速度:200m/min,切込み:2.0mm,送り:0.20mm/revの条件で乾式断続旋削試験を行い、切刃のチッピング,刃先の破損および平均逃げ面摩耗幅が0.20mmとなるまでの平均寿命時間を求めた。その結果を表4に示す。 Workpiece: S48C (with 4 grooves), cutting speed: 200 m using the coated tips of the present invention products 2, 3, 4, 5 and comparative products 1, 2, 3, 5 obtained in Example 1 / Min, cutting depth: 2.0 mm, feed rate: 0.20 mm / rev, dry interrupted turning test, cutting edge chipping, cutting edge damage and average life until average flank wear width reaches 0.20 mm Seeking time. The results are shown in Table 4.
表4から、本発明品2,3,4,5は、比較品1,2,3,5よりも工具寿命が長いことが分かる。
From Table 4, it can be seen that the inventive products 2, 3, 4, and 5 have a longer tool life than the comparative products 1, 2, 3, and 5.
Claims (5)
The coating according to claim 4 is a coated cutting tool having an average film thickness of 1 to 10 µm.
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