JP2007221147A5 - - Google Patents

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Publication number
JP2007221147A5
JP2007221147A5 JP2007038496A JP2007038496A JP2007221147A5 JP 2007221147 A5 JP2007221147 A5 JP 2007221147A5 JP 2007038496 A JP2007038496 A JP 2007038496A JP 2007038496 A JP2007038496 A JP 2007038496A JP 2007221147 A5 JP2007221147 A5 JP 2007221147A5
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JP
Japan
Prior art keywords
region
interlayer dielectric
trench
density
trench density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007038496A
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English (en)
Japanese (ja)
Other versions
JP5134828B2 (ja
JP2007221147A (ja
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Publication date
Priority claimed from US11/356,146 external-priority patent/US7524758B2/en
Application filed filed Critical
Publication of JP2007221147A publication Critical patent/JP2007221147A/ja
Publication of JP2007221147A5 publication Critical patent/JP2007221147A5/ja
Application granted granted Critical
Publication of JP5134828B2 publication Critical patent/JP5134828B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007038496A 2006-02-17 2007-02-19 半導体装置の相互接続構造およびその方法 Expired - Fee Related JP5134828B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/356,146 US7524758B2 (en) 2006-02-17 2006-02-17 Interconnect structure and method for semiconductor device
US11/356,146 2006-02-17

Publications (3)

Publication Number Publication Date
JP2007221147A JP2007221147A (ja) 2007-08-30
JP2007221147A5 true JP2007221147A5 (https=) 2009-10-01
JP5134828B2 JP5134828B2 (ja) 2013-01-30

Family

ID=38428777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007038496A Expired - Fee Related JP5134828B2 (ja) 2006-02-17 2007-02-19 半導体装置の相互接続構造およびその方法

Country Status (2)

Country Link
US (2) US7524758B2 (https=)
JP (1) JP5134828B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633016B (zh) * 2012-08-23 2016-08-03 中国科学院微电子研究所 一种半导体结构及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
US5863828A (en) * 1996-09-25 1999-01-26 National Semiconductor Corporation Trench planarization technique
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
JP3533968B2 (ja) 1998-12-22 2004-06-07 セイコーエプソン株式会社 半導体装置の製造方法
JP4570720B2 (ja) * 2000-02-15 2010-10-27 Ｏｋｉセミコンダクタ株式会社 半導体素子の製造方法
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
JP2004288929A (ja) * 2003-03-24 2004-10-14 Renesas Technology Corp 半導体装置の製造方法
US7179717B2 (en) * 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices

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