JP5134828B2 - 半導体装置の相互接続構造およびその方法 - Google Patents

半導体装置の相互接続構造およびその方法 Download PDF

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Publication number
JP5134828B2
JP5134828B2 JP2007038496A JP2007038496A JP5134828B2 JP 5134828 B2 JP5134828 B2 JP 5134828B2 JP 2007038496 A JP2007038496 A JP 2007038496A JP 2007038496 A JP2007038496 A JP 2007038496A JP 5134828 B2 JP5134828 B2 JP 5134828B2
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Japan
Prior art keywords
region
trench
ild
density
trenches
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Expired - Fee Related
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JP2007038496A
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Japanese (ja)
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JP2007221147A (ja
JP2007221147A5 (https=
Inventor
義明 下岡
匡 飯島
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/058—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by depositing on sacrificial masks, e.g. using lift-off

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007038496A 2006-02-17 2007-02-19 半導体装置の相互接続構造およびその方法 Expired - Fee Related JP5134828B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/356,146 US7524758B2 (en) 2006-02-17 2006-02-17 Interconnect structure and method for semiconductor device
US11/356,146 2006-02-17

Publications (3)

Publication Number Publication Date
JP2007221147A JP2007221147A (ja) 2007-08-30
JP2007221147A5 JP2007221147A5 (https=) 2009-10-01
JP5134828B2 true JP5134828B2 (ja) 2013-01-30

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ID=38428777

Family Applications (1)

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JP2007038496A Expired - Fee Related JP5134828B2 (ja) 2006-02-17 2007-02-19 半導体装置の相互接続構造およびその方法

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US (2) US7524758B2 (https=)
JP (1) JP5134828B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633016B (zh) * 2012-08-23 2016-08-03 中国科学院微电子研究所 一种半导体结构及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
US5863828A (en) * 1996-09-25 1999-01-26 National Semiconductor Corporation Trench planarization technique
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
JP3533968B2 (ja) 1998-12-22 2004-06-07 セイコーエプソン株式会社 半導体装置の製造方法
JP4570720B2 (ja) * 2000-02-15 2010-10-27 Ｏｋｉセミコンダクタ株式会社 半導体素子の製造方法
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
JP2004288929A (ja) * 2003-03-24 2004-10-14 Renesas Technology Corp 半導体装置の製造方法
US7179717B2 (en) * 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices

Also Published As

Publication number Publication date
JP2007221147A (ja) 2007-08-30
US7768134B2 (en) 2010-08-03
US20090146290A1 (en) 2009-06-11
US7524758B2 (en) 2009-04-28
US20070197024A1 (en) 2007-08-23

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