JP2007217233A - Piezoelectric ceramic - Google Patents

Piezoelectric ceramic Download PDF

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JP2007217233A
JP2007217233A JP2006040331A JP2006040331A JP2007217233A JP 2007217233 A JP2007217233 A JP 2007217233A JP 2006040331 A JP2006040331 A JP 2006040331A JP 2006040331 A JP2006040331 A JP 2006040331A JP 2007217233 A JP2007217233 A JP 2007217233A
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tinbo
piezoelectric ceramic
ceramics
electromechanical coupling
mechanical quality
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Takeshi Imaeda
武司 今枝
Yutaka Sugaya
豊 菅谷
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Toko Inc
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Toko Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric ceramic with which specific dielectric constant is made small, mechanical quality coefficient Qm is made large, and electromechanical coupling factor is made large, and environmental problems due to lead do not occur. <P>SOLUTION: The piezoelectric ceramic is composed essentially of a ceramic expressed by general formula, (1-x-y)SrBi<SB>2</SB>Nb<SB>2</SB>O<SB>9</SB>-xNdBi<SB>2</SB>TiNbO<SB>9</SB>-yBi<SB>3</SB>TiNbO<SB>9</SB>, wherein (x) and (y) are in a range of 0<x<0.2 and 0<y<0.5, respectively, and 50-1,000 ppm by weight of ZrO<SB>2</SB>is added into the main component as an assistant component. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、セラミックレゾネータ、セラミックフィルタ、温度センサ等に用いられる圧電セラミックスに関するものである。   The present invention relates to piezoelectric ceramics used for ceramic resonators, ceramic filters, temperature sensors and the like.

従来の圧電セラミックスに、PZTと呼ばれるPbZrO−PbTiO固溶体のMPB(morphotropic phase boundary)近傍組成系のものがある。この様な組成系の圧電セラミックスは、安価で電気的特性が良いため、様々な電子部品に用いられている。
しかしながら、この種の圧電セラミックスは、鉛を大量に含有しているため、製造過程の焼成溶融等の熱処理時に大気中に鉛が放出されたり、電子部品の形で市場に出回った後、これら電子部品が廃棄される際にも土壌中に鉛が放出されたりして鉛の環境に与える影響が問題となり、工業的利用が禁止又は制限されるようになってきている。
また、近年、電気信号がアナログからデジタルへの変換が急速に行われているため、電子部品の使用範囲が高周波領域に広がりつつあり、比誘電率が1000以下と小さく、機械的品質係数Qmが2000以上と大きい圧電セラミックスの要求が高まってきている。
この様な状況の中、鉛を含有せず、比誘電率が小さく、機械的品質係数Qmが大きい材料として、ビスマス層状構造強誘電体が注目されている。(例えば、特許文献1、2を参照。)
特開2002−145669号公報 特開2001−294486号公報
Conventional piezoelectric ceramics include a PbZrO 3 —PbTiO 3 solid solution MPB (morphotropic phase boundary) neighborhood composition system called PZT. Piezoelectric ceramics having such a composition are inexpensive and have good electrical characteristics, and are therefore used in various electronic parts.
However, since this type of piezoelectric ceramic contains a large amount of lead, the lead is released into the atmosphere at the time of heat treatment such as firing and melting in the manufacturing process, or after being marketed in the form of electronic components, Even when parts are discarded, the influence of lead on the environment caused by the release of lead into the soil has become a problem, and industrial use has been prohibited or restricted.
In recent years, electrical signals have been rapidly converted from analog to digital, so the range of use of electronic components is expanding into the high frequency region, the relative dielectric constant is as small as 1000 or less, and the mechanical quality factor Qm is The demand for piezoelectric ceramics as large as 2000 or more is increasing.
Under such circumstances, bismuth layered structure ferroelectrics have attracted attention as a material that does not contain lead, has a low relative dielectric constant, and has a high mechanical quality factor Qm. (For example, see Patent Documents 1 and 2.)
JP 2002-145669 A JP 2001-294486 A

しかしながら、ビスマス層状構造強誘電体は、比誘電率が小さく、機械的品質係数Qmが大きくても、電気機械結合係数kが小さかった。   However, the bismuth layer structure ferroelectric has a small relative dielectric constant and a small electromechanical coupling coefficient k even if the mechanical quality factor Qm is large.

本発明は、比誘電率を小さくかつ、機械的品質係数Qmを大きくすることができると共に、電気機械結合係数kを大きくでき、鉛による環境上の問題が発生しない圧電セラミックスを提供することを目的とする。   An object of the present invention is to provide a piezoelectric ceramic that can reduce the relative dielectric constant, increase the mechanical quality factor Qm, increase the electromechanical coupling coefficient k, and cause no environmental problems due to lead. And

本発明の圧電セラミックスは、ビスマス層状構造強誘電体の一種であるSr−Bi−Nb系セラミックスとNd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスとを固溶することにより前述の課題を解決するものである。
本発明の圧電セラミックスは、一般式(1−x−y)SrBiNb−xNdBiTiNbO−yBiTiNbOで表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とし、副成分としてZrOを主成分に対し、重量比で50〜1000ppm添加することを特徴とする。
The piezoelectric ceramic of the present invention is obtained by dissolving Sr—Bi—Nb ceramics, Nd—Bi—Ti—Nb ceramics, and Bi—Ti—Nb ceramics, which are a kind of bismuth layered structure ferroelectrics, as described above. It solves the problem.
The piezoelectric ceramic of the present invention are represented by the general formula (1-x-y) SrBi 2 Nb 2 O 9 -xNdBi 2 TiNbO 9 -yBi 3 TiNbO 9, x is 0 <x <0.2, y is 0 < The main component is ceramics having a composition range of y <0.5, and ZrO 2 is added as a subcomponent to the main component in an amount of 50 to 1000 ppm by weight.

本発明の圧電セラミックスは、一般式(1−x−y)SrBiNb−xNdBiTiNbO−yBiTiNbOで表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とし、副成分としてZrOを主成分に対し、重量比で50〜1000ppm添加することで、比誘電率を小さくかつ、機械的品質係数Qmを大きくすることができると共に、電気機械結合係数kを大きくできる。また、本発明の圧電セラミックスは、鉛を含有しないので、製造過程や電子部品が廃棄される際に鉛が放出されることがなく、環境上の問題が生じることもない。 The piezoelectric ceramic of the present invention are represented by the general formula (1-x-y) SrBi 2 Nb 2 O 9 -xNdBi 2 TiNbO 9 -yBi 3 TiNbO 9, x is 0 <x <0.2, y is 0 < Addition of 50 to 1000 ppm by weight of ceramics in the composition range of y <0.5 as a main component and ZrO 2 as a subcomponent to the main component, thereby reducing the relative dielectric constant and the mechanical quality factor Qm. And the electromechanical coupling coefficient k can be increased. Further, since the piezoelectric ceramic of the present invention does not contain lead, lead is not released when the manufacturing process or electronic parts are discarded, and environmental problems do not occur.

本発明の圧電セラミックスは、Sr−Bi−Nb系セラミックスに、Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスを固溶させる。Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスの固溶量によって、電気機械結合係数kを調整することができる。また、副成分として添加するZrOの量によっても電気機械結合係数kを調整することができる。 In the piezoelectric ceramic of the present invention, Nd—Bi—Ti—Nb ceramics and Bi—Ti—Nb ceramics are dissolved in Sr—Bi—Nb ceramics. The electromechanical coupling coefficient k can be adjusted by the solid solution amount of the Nd—Bi—Ti—Nb ceramics and the Bi—Ti—Nb ceramics. Further, the electromechanical coupling coefficient k can also be adjusted by the amount of ZrO 2 added as a subcomponent.

以下、本発明の圧電セラミックスの実施例について説明する。
まず、本発明による圧電セラミックスの製造方法について説明する。SrCO、Bi、Nb、Nd、TiO、ZrOの原料粉末を所定の組成となるように秤量し、ボールミル等を用いて20時間湿混合した。これらの混合粉末を750〜1000℃で仮焼し、この仮焼物を平均粒径が1μm以下になるように粉砕した。この粉砕物を乾燥した後、これにバインダーを加え、造粒、成形し、焼成することにより本発明による材料を得た。
Examples of the piezoelectric ceramic of the present invention will be described below.
First, a method for manufacturing a piezoelectric ceramic according to the present invention will be described. Raw material powders of SrCO 3 , Bi 2 O 3 , Nb 2 O 5 , Nd 2 O 3 , TiO 2 , and ZrO 2 were weighed to have a predetermined composition, and wet-mixed for 20 hours using a ball mill or the like. These mixed powders were calcined at 750 to 1000 ° C., and the calcined product was pulverized so that the average particle size was 1 μm or less. After the pulverized product was dried, a binder was added thereto, granulated, molded and fired to obtain a material according to the present invention.

本発明による圧電セラミックスの特性の測定は、前述の圧電セラミックスを成形、焼成した6.9mm×6.9mmの角板状の磁器を厚さが0.1〜0.5mmになる様に研磨した後、両面に銀電極を形成し、次いで、絶縁オイル中において、温度が80〜250℃、電界が3〜15kV/mm、時間が1〜30分の条件で一度分極処理をした後、逆方向から分極処理をし、さらに、銀電極をエッチングした磁器に直径0.5〜1.5mmの円電極を形成して評価サンプルを得て行った。この特性の測定は、共振・反共振法を利用して行い、周波数定数が4300Hz・m付近の厚み縦高調波振動の電気機械結合係数kと機械的品質係数Qmを算出した。   The characteristics of the piezoelectric ceramic according to the present invention were measured by polishing a 6.9 mm × 6.9 mm square plate-shaped porcelain formed and fired from the above-described piezoelectric ceramic so that the thickness was 0.1 to 0.5 mm. Thereafter, silver electrodes are formed on both sides, and then in the insulating oil, once the polarization treatment is performed under the conditions of a temperature of 80 to 250 ° C., an electric field of 3 to 15 kV / mm, and a time of 1 to 30 minutes, the reverse direction Further, a circular electrode having a diameter of 0.5 to 1.5 mm was formed on a porcelain having a silver electrode etched, and an evaluation sample was obtained. This characteristic was measured using a resonance / anti-resonance method, and an electromechanical coupling coefficient k and a mechanical quality factor Qm of thickness longitudinal harmonic vibration having a frequency constant of about 4300 Hz · m were calculated.

a)図1に、圧電セラミックスにおけるNdBiTiNbOの置換量xとBiTiNbOの置換量yについて評価サンプルを作成し、検討した結果を示す。
結果、NdBiTiNbOの置換量xを0<x<0.2かつ、BiTiNbOの置換量yを0<y<0.5、にした時、周波数定数が4300Hz・m付近の厚み縦高調波振動の電気機械結合係数kと機械的品質係数Qmが最大となる条件を得た。
b)つぎに、図2に、a)で得られた条件の原料粉末に副成分であるZrO2の原料粉末の添加量を変えた時の特性を測定した結果を示す。ただし、この時のNdBiTiNbOの置換量xをx=0.065、かつ、BiTiNbOの置換量yをy=0.28とした。試料No.の×印は本発明の範囲外のものであることを示す。
結果、NdBiTiNbOの置換量xを0<x<0.2、BiTiNbOの置換量yを0<y<0.5の主成分に対し、ZrO2の添加料を重量比で100〜1000ppmの範囲内にすることで、比誘電率が200以下となり、機械的品質係数Qmを2500以上、電気機械結合係数kを13%以上にすることができた。
a) FIG. 1 shows an evaluation sample prepared by examining the substitution amount x of NdBi 2 TiNbO 9 and the substitution amount y of Bi 3 TiNbO 9 in the piezoelectric ceramic.
As a result, when the substitution amount x of NdBi 2 TiNbO 9 is 0 <x <0.2 and the substitution amount y of Bi 3 TiNbO 9 is 0 <y <0.5, the frequency constant is a thickness around 4300 Hz · m. The condition that the electromechanical coupling coefficient k and the mechanical quality factor Qm of the longitudinal harmonic vibration are maximized was obtained.
b) Next, FIG. 2 shows the results of measuring the characteristics when the amount of the ZrO2 raw material powder, which is a subsidiary component, is changed to the raw material powder obtained in a). However, the substitution amount x of NdBi 2 TiNbO 9 at this time was x = 0.065, and the substitution amount y of Bi 3 TiNbO 9 was y = 0.28. Sample No. The X mark indicates that it is outside the scope of the present invention.
As a result, the substitution amount x of NdBi 2 TiNbO 9 is 0 <x <0.2, the substitution amount y of Bi 3 TiNbO 9 is 0 <y <0.5, and the additive amount of ZrO 2 is 100 by weight. By setting the content within the range of ˜1000 ppm, the relative dielectric constant was 200 or less, the mechanical quality factor Qm was 2500 or more, and the electromechanical coupling coefficient k was 13% or more.

また、図3に、周波数−インピーダンス特性を示す。
波形Aは図2の試料No.10を示す本発明の特性であり、波形Bは図1の試料No.8を示す。このように、波形Aは波形Bよりインピーダンス特性において、周波数定数が4300Hz・m付近の厚み縦高調波振動の電気機械結合係数kと機械的品質係数Qmが大きいことが判る。さらに、周波数定数が4300Hz・m付近の厚み縦高調波振動付近におけるスプリアスがなく、エネルギー閉じ込めを可能であることが判る。
FIG. 3 shows frequency-impedance characteristics.
Waveform A is sample No. in FIG. 10 is a characteristic of the present invention, and the waveform B indicates the sample No. 8 is shown. Thus, it can be seen that the waveform A has a greater impedance characteristic than the waveform B, and the electromechanical coupling coefficient k and the mechanical quality factor Qm of the thickness longitudinal harmonic vibration having a frequency constant near 4300 Hz · m. Further, it can be seen that there is no spurious near the thickness longitudinal harmonic vibration having a frequency constant of about 4300 Hz · m, and energy confinement is possible.

このように、本発明の圧電セラミックスは、NdBiTiNbOの置換量xの値が0<x<0.2、BiTiNbOの置換量yの値が0<y<0.5の範囲であり、副成分としてZrOを主成分に対し、重量比で50〜1000ppmの範囲内に添加することにより、比誘電率を小さく、かつ、良好な電気機械結合係数k、機械的品質係数Qmを得ることができる。 Thus, in the piezoelectric ceramic of the present invention, the value of the substitution amount x of NdBi 2 TiNbO 9 is 0 <x <0.2, and the value of the substitution amount y of Bi 3 TiNbO 9 is in the range of 0 <y <0.5. By adding ZrO 2 as a subsidiary component in the range of 50 to 1000 ppm by weight with respect to the main component, the relative dielectric constant is reduced, and an excellent electromechanical coupling coefficient k, mechanical quality factor Qm Can be obtained.

以上、本発明の圧電セラミックスの実施例を述べたが、これら実施例に限られるものではない。例えば、ビスマス層状強誘電体が主結晶構造となっていればよく、一部に、ペロブスカイト構造やパイロクロア構造が副結晶構造として含まれていてもよい。また、NdBiTiNbOのNdに変わって、La、Sm、Gd等の希土類金属や、それらを複合したものであってもよい。 As mentioned above, although the Example of the piezoelectric ceramic of this invention was described, it is not restricted to these Examples. For example, the bismuth layered ferroelectric has only to have a main crystal structure, and a perovskite structure or a pyrochlore structure may be included as a sub-crystal structure in part. Further, instead of Nd of NdBi 2 TiNbO 9 , a rare earth metal such as La, Sm, Gd, or a composite thereof may be used.

NdBiTiNbOの置換量xを0<x<0.2かつ、BiTiNbOの置換量yを0<y<0.5、にした時の圧電セラミックスの特性を示す。The characteristics of the piezoelectric ceramic when the substitution amount x of NdBi 2 TiNbO 9 is 0 <x <0.2 and the substitution amount y of Bi 3 TiNbO 9 is 0 <y <0.5 are shown. 本発明の圧電セラミックスの特性を説明するための特性の表である。It is a table | surface of the characteristic for demonstrating the characteristic of the piezoelectric ceramic of this invention. 本発明の圧電セラミックスの特性を説明するための周波数−インピーダンス特性である。It is a frequency-impedance characteristic for demonstrating the characteristic of the piezoelectric ceramic of this invention.

Claims (1)

一般式
(1−x−y)SrBiNb−xNdBiTiNbO−yBiTiNbO
で表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とし、副成分としてZrOを主成分に対し、重量比で50〜1000ppm添加することを特徴とする圧電セラミックス。
Formula (1-x-y) SrBi 2 Nb 2 O 9 -xNdBi 2 TiNbO 9 -yBi 3 TiNbO 9
The main component is a ceramic having a composition range where x is 0 <x <0.2 and y is 0 <y <0.5, and ZrO 2 as a subcomponent is 50 to 50 by weight with respect to the main component. Piezoelectric ceramics characterized by adding 1000 ppm.
JP2006040331A 2006-02-17 2006-02-17 Piezoelectric ceramic Pending JP2007217233A (en)

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Publication number Priority date Publication date Assignee Title
WO2017098852A1 (en) * 2015-12-11 2017-06-15 国立大学法人北陸先端科学技術大学院大学 Oxide dielectric body, method for producing same, solid-state electronic device and method for manufacturing solid-state electronic device
WO2018116608A1 (en) * 2016-12-22 2018-06-28 国立大学法人北陸先端科学技術大学院大学 Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device

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JP2001335362A (en) * 2000-05-26 2001-12-04 Tdk Corp Piezoelectric ceramic and piezoelectric device using it
JP2002173369A (en) * 2000-07-28 2002-06-21 Tdk Corp Piezoelectric ceramic
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017098852A1 (en) * 2015-12-11 2017-06-15 国立大学法人北陸先端科学技術大学院大学 Oxide dielectric body, method for producing same, solid-state electronic device and method for manufacturing solid-state electronic device
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WO2018116608A1 (en) * 2016-12-22 2018-06-28 国立大学法人北陸先端科学技術大学院大学 Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device
JPWO2018116608A1 (en) * 2016-12-22 2019-10-24 国立大学法人北陸先端科学技術大学院大学 Oxide dielectric and manufacturing method thereof, solid-state electronic device and manufacturing method thereof

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