JP2006062955A - Piezoelectric ceramic - Google Patents
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- JP2006062955A JP2006062955A JP2005220185A JP2005220185A JP2006062955A JP 2006062955 A JP2006062955 A JP 2006062955A JP 2005220185 A JP2005220185 A JP 2005220185A JP 2005220185 A JP2005220185 A JP 2005220185A JP 2006062955 A JP2006062955 A JP 2006062955A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 55
- 239000000203 mixture Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 abstract description 12
- 238000010168 coupling process Methods 0.000 abstract description 12
- 238000005859 coupling reaction Methods 0.000 abstract description 12
- 229910052797 bismuth Inorganic materials 0.000 abstract description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Abstract
Description
本発明は、セラミックレゾネータ、セラミックフィルタ、温度センサ等に用いられる圧電セラミックスに関するものである。 The present invention relates to piezoelectric ceramics used for ceramic resonators, ceramic filters, temperature sensors and the like.
従来の圧電セラミックスに、PZTと呼ばれるPbZrO3−PbTiO3固溶体のMPB(morphotropic phase boundary)近傍組成系のものがある。この様な組成系の圧電セラミックスは、安価で電気特性が良いため、様々な電子部品に用いられている。
しかしながら、この種の圧電セラミックスは、鉛を大量に含有しているため、製造過程の焼成溶融等の熱処理時に大気中に鉛が放出されたり、電子部品の形で市場に出回った後、これら電子部品が廃棄される際にも土壌中に鉛が放出されたりして鉛の環境に与える影響が問題となり、工業的利用が禁止又は制限されるようになってきている。
また、近年、電気信号のアナログからデジタルへの変換が急速に行われているため、電子部品の使用範囲が高周波領域に広がりつつあり、比誘電率が1000以下と小さく、機械的品質係数Qmが1000以上と大きい圧電セラミックスの要求が高まってきている。
この様な状況の中、鉛を含有せず、比誘電率が小さく、機械的品質係数Qmが大きい材料として、ビスマス層状構造強誘電体が注目されている。(例えば、特許文献1、2を参照。)
However, since this type of piezoelectric ceramic contains a large amount of lead, the lead is released into the atmosphere at the time of heat treatment such as firing and melting in the manufacturing process, or after being marketed in the form of electronic components, Even when parts are discarded, the influence of lead on the environment due to the release of lead into the soil has become a problem, and industrial use has been prohibited or restricted.
In recent years, the conversion of electrical signals from analog to digital has been rapidly carried out, so that the use range of electronic parts is expanding to a high frequency region, the relative dielectric constant is as small as 1000 or less, and the mechanical quality factor Qm is The demand for piezoelectric ceramics as large as 1000 or more is increasing.
Under such circumstances, bismuth layered structure ferroelectrics have attracted attention as a material that does not contain lead, has a low relative dielectric constant, and has a high mechanical quality factor Qm. (For example, see
しかしながら、ビスマス層状構造強誘電体は、比誘電率が小さく、機械的品質係数Qmが大きくても、電気機械結合係数kが小さかった。 However, the bismuth layer structure ferroelectric has a small relative dielectric constant and a small electromechanical coupling coefficient k even if the mechanical quality factor Qm is large.
本発明は、比誘電率を小さくかつ、機械的品質係数Qmを大きくすることができると共に、電気機械結合係数kを大きくでき、鉛による環境上の問題が発生しない圧電セラミックスを提供することを目的とする。 An object of the present invention is to provide a piezoelectric ceramic that can reduce the relative dielectric constant, increase the mechanical quality factor Qm, increase the electromechanical coupling coefficient k, and cause no environmental problems due to lead. And
本発明の圧電セラミックスは、ビスマス層状構造強誘電体の一種であるSr−Bi−Nb系セラミックスとNd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスとを固溶することにより前述の課題を解決するものである。
本発明の圧電セラミックスは、一般式(1−x−y)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9で表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とする。
また、本発明の圧電セラミックスは、一般式(1−x−y−z)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9−zMBi2Nb2O9で表され、xが0<x<0.2、yが0<y<0.5、zが0≦z<0.1の組成範囲にあり、MがBa又はCaであるセラミックスを主成分とする。
The piezoelectric ceramic of the present invention is obtained by dissolving Sr—Bi—Nb ceramics, Nd—Bi—Ti—Nb ceramics, and Bi—Ti—Nb ceramics, which are a kind of ferroelectrics having a bismuth layer structure. It solves the problem.
The piezoelectric ceramic of the present invention are represented by the
The piezoelectric ceramic of the present invention are represented by the general formula (1-x-y-z )
本発明の圧電セラミックスは、一般式(1−x−y)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9で表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とするので、比誘電率を小さくかつ、機械的品質係数Qmを大きくすることができると共に、電気機械結合係数kを大きくできる。また、本発明の圧電セラミックスは、鉛を含有しないので、製造過程や電子部品が廃棄される際に鉛が放出されることがなく、環境上の問題が生じることもない。
また、本発明の圧電セラミックスは、一般式(1−x−y−z)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9−zMBi2Nb2O9で表され、xが0<x<0.2、yが0<y<0.5、zが0≦z<0.1の組成範囲にあり、MがBa又はCaであるセラミックスを主成分とするので、比誘電率を小さくかつ、機械的品質係数Qmを大きくすることができると共に、電気機械結合係数kを大きくできる。また、本発明の圧電セラミックスは、鉛を含有しないので、製造過程や電子部品が廃棄される際に鉛が放出されることがなく、環境上の問題が生じることもない。
The piezoelectric ceramic of the present invention are represented by the
The piezoelectric ceramic of the present invention are represented by the general formula (1-x-y-z )
本発明の圧電セラミックスは、Sr−Bi−Nb系セラミックスに、Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスを固溶させる。従って、本発明の圧電セラミックスは、Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスの固溶量によって、電気機械結合係数kを調整することができる。
また、本発明の圧電セラミックスは、Sr−Bi−Nb系セラミックスに、Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスとM−Bi−Nb系セラミックスを固溶させる。従って、本発明の圧電セラミックスは、Nd−Bi−Ti−Nb系セラミックスとBi−Ti−Nb系セラミックスとM−Bi−Nb系セラミックスの固溶量によって、電気機械結合係数kを調整することができる。
In the piezoelectric ceramic of the present invention, Nd—Bi—Ti—Nb ceramics and Bi—Ti—Nb ceramics are dissolved in Sr—Bi—Nb ceramics. Therefore, in the piezoelectric ceramic of the present invention, the electromechanical coupling coefficient k can be adjusted by the solid solution amount of the Nd—Bi—Ti—Nb based ceramic and the Bi—Ti—Nb based ceramic.
In addition, the piezoelectric ceramic of the present invention makes Nd-Bi-Ti-Nb ceramics, Bi-Ti-Nb ceramics, and M-Bi-Nb ceramics dissolve in Sr-Bi-Nb ceramics. Therefore, in the piezoelectric ceramic of the present invention, the electromechanical coupling coefficient k can be adjusted by the solid solution amount of the Nd-Bi-Ti-Nb ceramics, Bi-Ti-Nb ceramics, and M-Bi-Nb ceramics. it can.
以下、本発明の圧電セラミックスの実施例について説明する。
まず、本発明による圧電セラミックスの製造方法について説明する。SrCO3、Bi2O3、Nb2O5、Nd2O3、TiO2の原料粉末を所定の組成となるように秤量するか又は、SrCO3、CaCO3、BaCO3、Bi2O3、Nb2O5、Nd2O3、TiO2の原料粉末を所定の組成となるように秤量するかして、これをボールミル等を用いて20時間湿混合した。これらの混合粉末を750〜1000℃で仮焼し、この仮焼物を平均粒径が1μm以下になるように粉砕した。この粉砕物を乾燥した後、これにバインダーを加えて造粒し、これを成形し、焼成することにより本発明による材料を得た。
Examples of the piezoelectric ceramic of the present invention will be described below.
First, a method for manufacturing a piezoelectric ceramic according to the present invention will be described. SrCO 3 , Bi 2 O 3 , Nb 2 O 5 , Nd 2 O 3 , TiO 2 raw material powder is weighed to have a predetermined composition, or SrCO 3 , CaCO 3 , BaCO 3 , Bi 2 O 3 , The raw material powder of Nb 2 O 5 , Nd 2 O 3 , and TiO 2 was weighed so as to have a predetermined composition, and this was wet-mixed for 20 hours using a ball mill or the like. These mixed powders were calcined at 750 to 1000 ° C., and the calcined product was pulverized so that the average particle size was 1 μm or less. The pulverized product was dried, granulated with a binder added thereto, molded, and fired to obtain a material according to the present invention.
本発明による圧電セラミックスの特性の測定は、前述の圧電セラミックスを成形、焼成した6.9mm×6.9mmの角板状の磁器を厚さが0.1〜0.5mmになる様に研磨した後、両面に銀電極を形成し、次いで、絶縁オイル中において、温度が80〜250℃、電界が3〜15kV/mm、時間が1〜30分の条件で一度分極処理をした後、逆方向から分極処理をし、さらに、銀電極をエッチングして磁器に直径0.5〜1.5mmの円電極を形成して評価サンプルを得て行った。この特性の測定は、共振・反共振法を利用して行い、周波数定数が4300Hz・m付近の厚み縦高調波振動の電気機械結合係数kと機械的品質係数Qmを算出した。また、比誘電率の温度変化を測定し、キュリー温度Tcを算出した。 The characteristics of the piezoelectric ceramic according to the present invention were measured by polishing a 6.9 mm × 6.9 mm square plate-shaped porcelain formed and fired from the above-described piezoelectric ceramic so that the thickness was 0.1 to 0.5 mm. Thereafter, silver electrodes are formed on both sides, and then in the insulating oil, once the polarization treatment is performed under the conditions of a temperature of 80 to 250 ° C., an electric field of 3 to 15 kV / mm, and a time of 1 to 30 minutes, the reverse direction Then, the sample was polarized, and the silver electrode was etched to form a circular electrode having a diameter of 0.5 to 1.5 mm on the porcelain to obtain an evaluation sample. This characteristic was measured using a resonance / anti-resonance method, and an electromechanical coupling coefficient k and a mechanical quality factor Qm of thickness longitudinal harmonic vibration having a frequency constant of about 4300 Hz · m were calculated. Moreover, the temperature change of the dielectric constant was measured, and the Curie temperature Tc was calculated.
図1は、(1−x−y−z)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9−zMBi2Nb2O9において、置換量x、y、zを変えたときの周波数定数が4300Hz・m付近の厚み縦高調波振動の電気機械結合係数k、機械的品質係数Qm、キュリー温度Tc、焼成温度を表にまとめたものである。なお、試料Noの*印は本発明の範囲外のものであることを示している。
本発明の圧電セラミックスは、NdBi2TiNbO9の置換量xが0<x<0.2、Bi3TiNbO9の置換量yが0<y<0.5、MBi2Nb2O9の置換量zが0≦z<0.1の範囲内で、比誘電率が200以下となり、機械的品質係数Qmを1000以上、電気機械結合係数kを11%以上にすることができた。また、キュリー温度Tcは、400℃以上であり、電子部品を電子機器のプリント基板等に半田付けする際のリフローの温度でも消極することがなかった。さらに、周波数定数が4300Hz・m付近の厚み縦高調波振動付近にスプリアスはなく、エネルギー閉じ込めが可能となった。
1, in (1-x-y-z )
In the piezoelectric ceramic of the present invention, the substitution amount x of NdBi 2 TiNbO 9 is 0 <x <0.2, the substitution amount y of Bi 3 TiNbO 9 is 0 <y <0.5, and the substitution amount of MBi 2 Nb 2 O 9 . When z is in the range of 0 ≦ z <0.1, the relative permittivity is 200 or less, the mechanical quality factor Qm is 1000 or more, and the electromechanical coupling coefficient k is 11% or more. Further, the Curie temperature Tc is 400 ° C. or higher, and the Curie temperature Tc was not negative even at the reflow temperature when soldering the electronic component to the printed circuit board or the like of the electronic device. Furthermore, there was no spurious near the thickness longitudinal harmonic vibration with a frequency constant of 4300 Hz · m, and energy confinement became possible.
図2は、試料No3のXRD波形を示したものである。図2より、このセラミックスは、Sr−Bi−Nb系のビスマス層状構造強誘電体の単一相となっていることがわかる。 FIG. 2 shows the XRD waveform of sample No3. From FIG. 2, it can be seen that this ceramic is a single phase of a Sr—Bi—Nb-based bismuth layer structure ferroelectric.
この様に本発明の圧電セラミックスは、xの値が0<x<0.2、yの値が0<y<0.5、zの値が0≦z<0.1の範囲で、比誘電率を小さくかつ、良好な電気機械結合係数k、機械的品質係数Qmを得ることができる。 Thus, the piezoelectric ceramic of the present invention has a ratio of x in the range of 0 <x <0.2, y in the range of 0 <y <0.5, and z in the range of 0 ≦ z <0.1. The dielectric constant is small, and an excellent electromechanical coupling coefficient k and mechanical quality coefficient Qm can be obtained.
以上、本発明の圧電セラミックスの実施例を述べたが、これら実施例に限られるものではない。例えば、ビスマス層状強誘電体が主結晶構造となっていればよく、一部に、ペロブスカイト構造やパイロクロア構造が副結晶構造として含まれていてもよい。また、NdBi2TiNbO9のNdに変わって、La、Sm、Gd等の希土類金属や、それらを複合したものであってもよい。さらに、MBi2Nb2O9のMとして、Ca又はBaと同じ価数の(Li0.5Bi0.5)、(Na0.5Bi0.5)、(K0.5Bi0.5)、Mg等が用いられたり、それらを複合したものが用いられてもよい。 As mentioned above, although the Example of the piezoelectric ceramic of this invention was described, it is not restricted to these Examples. For example, the bismuth layered ferroelectric has only to have a main crystal structure, and a perovskite structure or a pyrochlore structure may be included as a sub-crystal structure in part. Further, instead of Nd of NdBi 2 TiNbO 9 , a rare earth metal such as La, Sm, Gd, or a composite thereof may be used. Furthermore, as M of MBi 2 Nb 2 O 9 , (Li 0.5 Bi 0.5 ), (Na 0.5 Bi 0.5 ), (K 0.5 Bi 0. 5 ), Mg or the like may be used, or a combination of them may be used.
Claims (2)
(1−x−y)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9
で表され、xが0<x<0.2、yが0<y<0.5の組成範囲にあるセラミックスを主成分とすることを特徴とする圧電セラミックス。 Formula (1-x-y) SrBi 2 Nb 2 O 9 -xNdBi 2 TiNbO 9 -yBi 3 TiNbO 9
A piezoelectric ceramic characterized in that the main component is a ceramic having a composition range where x is 0 <x <0.2 and y is 0 <y <0.5.
(1−x−y−z)SrBi2Nb2O9−xNdBi2TiNbO9−yBi3TiNbO9−zMBi2Nb2O9
で表され、xが0<x<0.2、yが0<y<0.5、zが0≦z<0.1の組成範囲にあり、MがBa又はCaであるセラミックスを主成分とすることを特徴とする圧電セラミックス。 Formula (1-x-y-z ) SrBi 2 Nb 2 O 9 -xNdBi 2 TiNbO 9 -yBi 3 TiNbO 9 -zMBi 2 Nb 2 O 9
The main component is a ceramic represented by the following formula: x is 0 <x <0.2, y is 0 <y <0.5, z is 0 ≦ z <0.1, and M is Ba or Ca. Piezoelectric ceramics characterized by that.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010024140A1 (en) | 2008-08-29 | 2010-03-04 | 太陽誘電株式会社 | Piezoelectric ceramic, process for producing the piezoelectric ceramic, and piezoelectric device |
WO2010128647A1 (en) | 2009-05-08 | 2010-11-11 | 太陽誘電株式会社 | Piezoelectric ceramic, method for producing same, and piezoelectric device |
CN110083944A (en) * | 2019-04-28 | 2019-08-02 | 重庆理工大学 | Power drive system mechanical-electric coupling hybrid modeling method |
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Cited By (6)
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WO2010024140A1 (en) | 2008-08-29 | 2010-03-04 | 太陽誘電株式会社 | Piezoelectric ceramic, process for producing the piezoelectric ceramic, and piezoelectric device |
US8487515B2 (en) | 2008-08-29 | 2013-07-16 | Taiyo Yuden Co., Ltd. | Piezoelectric ceramic, process for producing the piezoelectric ceramic, and piezoelectric device |
WO2010128647A1 (en) | 2009-05-08 | 2010-11-11 | 太陽誘電株式会社 | Piezoelectric ceramic, method for producing same, and piezoelectric device |
US8471442B2 (en) | 2009-05-08 | 2013-06-25 | Taiyo Yuden Co., Ltd. | Piezoelectric ceramic, method for producing same, and piezoelectric device |
CN110083944A (en) * | 2019-04-28 | 2019-08-02 | 重庆理工大学 | Power drive system mechanical-electric coupling hybrid modeling method |
CN110083944B (en) * | 2019-04-28 | 2023-04-07 | 重庆理工大学 | Electromechanical coupling hybrid modeling method for electric drive system |
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