JP2007214266A - Liquid resin coating device and laser processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid resin coating device, along with a laser processing device provided with a liquid resin coating function, capable of effectively using a liquid resin coated on the surface of a wafer. <P>SOLUTION: The liquid resin coating device coats the liquid resin on the surface of a wafer. It comprises a liquid resin pool which holds the liquid resin, and a wafer submerging means which holds the backside of the wafer and submerges the surface of the wafer to the surface of the liquid resin held in the liquid resin pool so that a resin film is coated on the surface of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a liquid resin coating apparatus for coating a liquid resin on the surface (processed surface) of a wafer such as a semiconductor wafer and a laser processing apparatus having a liquid resin coating function.

  As is well known to those skilled in the art, in a semiconductor device manufacturing process, a semiconductor in which a plurality of devices such as ICs and LSIs are formed in a matrix by a laminated body in which an insulating film and a functional film are laminated on the surface of a semiconductor substrate such as silicon. A wafer is formed. In the semiconductor wafer formed in this way, the above devices are partitioned by dividing lines called streets, and individual semiconductor chips are manufactured by cutting along the streets. In addition, an optical device wafer in which a plurality of regions are defined by streets formed in a lattice pattern on the surface of a sapphire substrate or the like, and an optical device in which a gallium nitride compound semiconductor or the like is stacked in the partitioned region is It is divided into individual light-emitting diodes, laser diodes and other optical devices along the street, and is widely used in electrical equipment.

  Such cutting along the streets of a wafer such as a semiconductor wafer or an optical device wafer is usually performed by a cutting device called a dicer. The cutting apparatus includes a chuck table for holding a wafer as a workpiece, a cutting means for cutting the wafer held by the chuck table, and a moving means for relatively moving the chuck table and the cutting means. It has. The cutting means includes a rotating spindle that is rotated at a high speed and a cutting blade attached to the spindle. The cutting blade is composed of a disk-shaped base and an annular cutting edge mounted on the outer peripheral portion of the side surface of the base. The cutting edge is fixed by electroforming diamond abrasive grains having a grain size of about 3 μm, for example, with a thickness of 20 μm. It is formed to the extent. When the wafer is cut with such a cutting blade, chips and cracks are generated on the cut surface of the cut chips, and the width of the street is formed to be about 50 μm in consideration of the effects of the chips and cracks. However, when the size of the semiconductor chip is reduced, the proportion of streets in the chip increases, which causes a decrease in productivity. Further, in cutting with a cutting blade, there is a problem that the feed rate is limited and the chip is contaminated by the generation of cutting waste.

In recent years, inorganic films such as SiOF and BSG (SiOB), polyimide films, and parylene films are formed on the surface of a semiconductor wafer body such as a silicon wafer in order to form devices such as ICs and LSIs more finely. A semiconductor wafer in a form in which a low dielectric constant insulator (Low-k film) made of an organic film such as a polymer film is laminated, or a semiconductor wafer provided with a metal pattern called a test element group (Teg) It has been put into practical use. When a semiconductor wafer in a form in which a low dielectric constant insulator (Low-k film) is laminated is cut along a street with a cutting blade, there is a problem that the low dielectric constant insulator is peeled off. Further, when a semiconductor wafer having a metal pattern called a test element group (Teg) is cut along a street with a cutting blade, burrs are generated because the metal pattern is formed of a sticky metal such as copper. There is a problem.

On the other hand, in recent years, as a method of dividing a plate-like workpiece such as a semiconductor wafer, a laser processing groove is formed by irradiating a pulse laser beam along a street formed on the workpiece, and along this laser processing groove. A method of cleaving with a mechanical braking device has been proposed. (For example, refer to Patent Document 1.)
JP-A-10-305420

  Laser processing can increase the processing speed as compared with cutting processing, and can relatively easily process even a wafer made of a material having high hardness such as sapphire. In addition, the method of forming a laser-processed groove by irradiating a laser beam can solve the problem that the low dielectric constant insulator layer is peeled off, and can also solve the problem that burrs are generated. However, when a laser beam is irradiated along the street of the wafer, the thermal energy concentrates on the irradiated area and debris is generated, and this debris adheres to the surface of the chip and has a new problem of deteriorating the quality of the chip. Arise.

In order to solve the problem caused by the debris, there has been proposed a laser processing method in which a processed film of a wafer is coated with a protective film such as polyvinyl alcohol, and the wafer is irradiated with a laser beam through the protective film. (For example, see Patent Document 2.)
JP 2004-188475 A

Further, in order to efficiently perform laser processing, there has been proposed a laser processing apparatus including a protective film forming means for covering a processed surface of a wafer with a protective film (see, for example, Patent Document 3).
JP 2004-322168 A

In the protective film forming method disclosed in the above publication, the wafer is held on a spinner table, a liquid resin such as polyvinyl alcohol is dropped on the surface of the wafer held on the spinner table, and the spinner table is rotated at high speed. Cover the wafer surface with a protective coating.
However, the method for forming the protective film cannot be used effectively because most of the liquid resin dropped on the surface of the wafer is scattered by centrifugal force, and the use amount of the liquid resin is increased, which is uneconomical. There's a problem.

  The present invention has been made in view of the above-mentioned facts, and its main technical problem is that it has a liquid resin coating apparatus and a liquid resin coating function that can effectively use the liquid resin coated on the surface of the wafer. It is to provide a laser processing apparatus.

In order to solve the main technical problem, according to the present invention, a liquid resin coating apparatus for coating a liquid resin on the surface of a wafer,
A liquid resin pool for storing the liquid resin, and a wafer immersion means for holding the back surface of the wafer and immersing the surface of the wafer in the liquid surface of the liquid resin stored in the liquid resin pool to coat the resin film on the surface of the wafer. ,
A liquid resin coating apparatus is provided.

  The wafer dipping means presses a holding means for holding an annular frame to which a protective tape attached to the back surface of the wafer is attached, and a region attached to the holding means to which the wafer is attached. Pressing means. The wafer immersion means includes a rotation driving means for rotating the holding means.

Further, according to the present invention, in a laser processing apparatus comprising: a chuck table that holds a wafer; and a laser beam irradiation unit that irradiates a wafer with a laser beam on the wafer held by the chuck table.
A liquid resin pool for storing the liquid resin, and a wafer immersion means for holding the back surface of the wafer and immersing the surface of the wafer in the liquid surface of the liquid resin stored in the liquid resin pool to coat the liquid resin on the surface of the wafer And a wafer transport means for receiving the wafer held by the wafer immersion means and having a surface coated with a resin film from the wafer immersion means, and placing the back surface of the wafer on the chuck table.
A laser processing apparatus is provided.

In the liquid resin coating apparatus according to the present invention, the liquid resin is coated on the surface of the wafer by holding the back surface of the wafer and immersing the surface of the wafer in the liquid resin liquid surface stored in the liquid resin pool. Since the liquid resin that has fallen into the liquid resin pool without being scattered outside the liquid resin pool can be used again, it is economical.
Moreover, since the laser processing apparatus according to the present invention has the liquid resin coating function, laser processing can be performed efficiently.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a liquid resin coating apparatus and a laser processing apparatus configured according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a laser processing apparatus having a liquid resin coating function constructed according to the present invention.
The laser processing apparatus shown in FIG. 1 includes a substantially rectangular parallelepiped apparatus housing 2. In the apparatus housing 2, a chuck table 3 as a wafer holding means for holding a wafer as a workpiece is disposed so as to be movable in a direction indicated by an arrow X that is a machining feed direction. The chuck table 3 includes a suction chuck support 31 and a suction chuck 32 mounted on the suction chuck support 31, and is a workpiece on a mounting surface that is a surface of the suction chuck 32. For example, a disk-shaped semiconductor wafer is held by suction means (not shown). The chuck table 3 is configured to be rotatable by a rotation mechanism (not shown). The suction chuck support 31 of the chuck table 3 configured as described above is provided with a clamp 33 for fixing an annular frame described later.

  The illustrated laser processing apparatus includes a laser beam irradiation means 4 that irradiates a workpiece held on the chucking chuck 32 of the chuck table 3 with a laser beam. The laser beam irradiation means 4 includes a cylindrical casing 41 disposed substantially horizontally. In the casing 41, a pulse laser beam oscillation means including a pulse laser beam oscillator or a repetition frequency setting means (not shown) including a YAG laser oscillator or a YVO4 laser oscillator is disposed. A condenser 42 for condensing the pulse laser beam oscillated from the pulse laser beam oscillating means is attached to the tip of the casing 41.

  The illustrated laser processing apparatus images the surface of the wafer held on the suction chuck 32 of the chuck table 3 and detects a region to be processed by a laser beam irradiated from the condenser 42 of the laser beam irradiation means 4. An imaging means 5 is provided. In the illustrated embodiment, the imaging unit 5 includes an infrared illumination unit that irradiates a workpiece with infrared rays, and an infrared ray that is irradiated by the infrared illumination unit, in addition to a normal imaging device (CCD) that captures visible light. And an imaging device (infrared CCD) that outputs an electrical signal corresponding to the infrared rays captured by the optical system, and sends the captured image signal to a control means (not shown). The wafer dividing apparatus shown in the figure includes a display unit 6 for displaying an image captured by the imaging unit 5.

  The illustrated laser processing apparatus includes a cassette mounting portion 13a on which a cassette that accommodates a semiconductor wafer 10 that is a workpiece is mounted. A cassette table 131 is arranged on the cassette mounting portion 13a so as to be movable up and down by lifting means (not shown). The cassette 13 is mounted on the cassette table 131. The semiconductor wafer 10 is affixed to the surface of a protective tape 12 attached to an annular frame 11 and is accommodated in the cassette 13 while being supported by the annular frame 11 via the protective tape 12. As shown in FIG. 3, the semiconductor wafer 10 is divided into a plurality of regions by a plurality of division lines 101 formed in a lattice pattern on the surface 10a, and devices 102 such as ICs, LSIs, etc. are formed in the divided regions. Is formed. As shown in FIG. 1, the semiconductor wafer 10 configured as described above is attached to the protective tape 12 mounted on the annular frame 11 with the front surface 10 a facing upward.

  The illustrated laser processing apparatus includes a wafer unloading / unloading means 14 for unloading the semiconductor wafer 10 before processing stored in the cassette 13 and loading the processed semiconductor wafer 10 into the cassette 13, and the wafer unloading / loading means 14. A temporary placement table 15 is provided for temporarily placing the unprocessed semiconductor wafer 10 unloaded. The illustrated laser processing apparatus includes a cleaning unit 16 that cleans the processed semiconductor wafer 10 held on the chuck table 3. The cleaning means 16 may have a configuration generally used conventionally, and includes a spinner table, a cleaning nozzle for supplying cleaning water, an air nozzle for injecting air, and the like.

The illustrated laser processing apparatus includes a liquid resin pool 7 for storing a liquid resin to be coated on the surface of the semiconductor wafer 10 before processing. The liquid resin pool 7 includes, for example, PVA (Poly Vinyl Alcohol), PEG (Poly Ethylene Glycol), PEO (Poly Ethylene).
A water-soluble liquid resin 70 such as Oxide) is stored. In addition, a liquid level detection sensor is provided so that the liquid level of the liquid resin 70 stored in the liquid resin pool 7 is always maintained at a predetermined height position, and a detection signal from the liquid level detection sensor is used. Based on this, it is desirable that the liquid resin is appropriately replenished from a liquid resin tank (not shown). A lid 71 that covers the upper surface of the liquid resin pool 7 is disposed adjacent to the liquid resin pool 7. The lid 71 has a support portion 72 attached to a turning shaft 73. The turning shaft 73 is connected to a drive shaft of an electric motor capable of normal rotation and reverse rotation (not shown). Therefore, when an electric motor (not shown) is driven forward, for example, the lid 71 is swung from the state shown in FIG. 1 in the direction indicated by the arrow 71 a and covers the upper surface of the liquid resin pool 7.

  The illustrated laser processing apparatus includes a wafer transfer means 8 for transferring the semiconductor wafer 10. The wafer transport means 8 supports a holding means 81 for sucking and holding the annular frame 11, a reversing motor 82 for reversing the holding means 81, and a reversing motor 82 that can be moved up and down and swiveled. And supporting means 83 to be used. The wafer transport unit 8 configured as described above can selectively position the holding unit 81 above the temporary placement table 15, the cleaning unit 16, and the chuck table 3.

  The laser processing apparatus in the illustrated embodiment conveys the semiconductor wafer 10 to the chuck table 3, the cleaning means 16, and the liquid resin pool 7, holds the back surface of the semiconductor wafer 10, and covers the surface of the semiconductor wafer 10 with the liquid resin pool 7. A wafer immersing means 9 is provided for immersing in the liquid surface of the liquid resin 70 stored on the semiconductor wafer 10 to coat the surface of the semiconductor wafer 10 with a resin film. The wafer immersion means 9 includes a holding means 91 for sucking and holding the annular frame 11, a supporting means 92 for supporting the holding means 91, and a moving means (not shown) for moving the supporting means 92 in the directions of arrows 90a and 90b. It consists of. As shown in FIG. 2, the holding means 91 includes a holding member 911 formed in a hat shape and a plurality of suction pads 912 attached to the lower surface of the outer peripheral portion of the holding member 911. Is connected to suction means (not shown). An air cylinder 93 is mounted on the lower surface of the central portion of the holding member 911 of the support means 92 configured as described above, and a pressing member 94 is attached to the piston rod 931 of the air cylinder 93. The pressing member 94 presses an area where the semiconductor wafer 10 is attached to the protective tape 12 mounted on the annular frame 11 by the operation of the air cylinder 93. Therefore, the air cylinder 93 and the pressing member 94 function as a pressing unit that presses the region where the wafer is attached to the protective tape mounted on the annular frame. The support means 92 includes an air cylinder 921, a rotation motor 922, a support arm 923 connected to one end of the rotation motor 922, and a turning motor 924 connected to a drive shaft at the other end of the support arm 923. The turning motor 924 is connected to a moving means (not shown). The air cylinder 921 has a piston rod 921 a attached to the holding member 911 of the holding means 91. The rotary motor 922 has a drive shaft connected to the air cylinder 921 and rotates the holding member 911 via the air cylinder 921. Therefore, the rotation motor 921 functions as a rotation driving unit that rotates the holding member 911. The turning motor 924 turns around the other end of the support arm 923, and the holding member 911 connected to the support arm 923 via the rotation motor 922 and the air cylinder 921 is connected to the cleaning means 16 and the liquid resin pool 7. Selective positioning.

The illustrated laser processing apparatus is configured as described above, and the operation thereof will be described below.
As shown in FIG. 1, an unprocessed semiconductor wafer 10 (hereinafter simply referred to as a semiconductor wafer 10) supported on an annular frame 11 via a protective tape 12 is formed on the cassette 13 with the surface 10a as a processing surface facing upward. Housed in place. The unprocessed semiconductor wafer 10 accommodated in a predetermined position of the cassette 13 is positioned at the unloading position when the cassette table 131 moves up and down by lifting means (not shown). Next, the workpiece unloading / carrying means 14 moves forward and backward, and the semiconductor wafer 10 positioned at the unloading position is unloaded to the temporary placement table 15. The semiconductor wafer 10 carried out to the temporary placement table 15 is subjected to a center alignment process for aligning the center position.

  Next, the holding means 81 for operating the wafer transport means 8 is positioned above the semiconductor wafer 10 whose center position is adjusted by the temporary table 15, and the holding means 81 is further lowered to operate a suction means (not shown). As shown in FIG. 4, an annular frame 11 supporting the semiconductor wafer 10 via a protective tape is sucked and held. Then, the holding means 81 is raised, and the reversing motor 82 is operated to reverse the front and back of the semiconductor wafer 10 as shown in FIG. Therefore, the surface of the semiconductor wafer 10 is on the lower side. Next, the holding means 81 is lowered and further rotated to be positioned above the cleaning means 16. The holding means 91 of the wafer immersion means 9 is positioned above the cleaning means 16. Accordingly, the semiconductor wafer 10 held by the holding means 81 of the wafer transport means 8 is positioned between the cleaning means 16 and the holding means 91 of the wafer immersion means 9.

  Next, as shown in FIG. 6, the air cylinder 921 of the wafer dipping means 9 is actuated to lower the holding means 91, and the suction means (not shown) is actuated to support the semiconductor wafer 10 via the protective tape by the suction pad 912. The annular frame 11 is sucked and held. Then, the suction holding of the annular frame 11 by the holding means 81 of the wafer transport means 8 is released.

  As described above, if the holding means 91 of the wafer dipping means 9 sucks and holds the annular frame 11 supporting the semiconductor wafer 10 via the protective tape above the cleaning means 16, the turning motor 924 is operated. The holding means 91 is positioned above the liquid resin pool 7. At this time, the lid 71 covering the upper surface of the liquid resin pool 7 is positioned at the open position shown in FIG.

  If the holding means 91 of the wafer immersion means 9 that sucks and holds the annular frame 11 supporting the semiconductor wafer 10 via the protective tape as described above is positioned above the liquid resin pool 7, FIG. As shown, the air cylinder 921 is actuated to lower the holding means 91. Then, the air cylinder 93 is operated, and the pressing member 94 connected to the piston rod 931 is lowered. As a result, the pressing member 94 presses the region of the protective tape 12 attached to the annular frame 11 to which the semiconductor wafer 10 is stuck, and the liquid resin in which the surface 10 a of the semiconductor wafer 10 is stored in the liquid resin pool 7. It is immersed in the liquid surface of 70 (wafer immersion process). Next, as shown in FIG. 8, the air cylinder 93 is operated to raise the pressing member 94, and the rotary motor 921 is operated to rotate the holding means 91 at a rotational speed of 300 to 1000 rpm. As a result, the liquid resin 70 adhering to the surface 10a of the semiconductor wafer 10 held by the holding means 91 moves to the outer periphery due to centrifugal force and is scattered, so that the surface 10a of the semiconductor wafer 10 is shown in FIG. Thus, a 1-10 μm resin film 700 is formed. As described above, the liquid resin pool 7 for storing the liquid resin 70 and the wafer dipping means 9 function as a liquid resin coating apparatus for coating the resin film 700 on the surface of the semiconductor wafer 10. The liquid resin 70 adhering to the semiconductor wafer 10 is scattered by the centrifugal force when the holding means 91 is rotated, but the scattered liquid resin 70 falls into the liquid resin pool 7 and can be used again.

  If the resin film 700 is coated on the surface of the semiconductor wafer 10 as described above, the air cylinder 921 is actuated to raise the holding means 91. The turning motor 924 of the wafer dipping means 9 is operated to position the holding means 91 above the holding means 81 of the wafer transport means 8 positioned above the cleaning means 16. Next, an annular frame 11 supporting the semiconductor wafer 10 held by the holding means 91 of the wafer dipping means 9 via a protective tape by operating a suction means (not shown) and holding means 81 of the wafer transport means 8. Hold the suction. Then, suction holding of the annular frame 11 by the holding means 91 of the wafer immersion means 9 is released.

  Next, the wafer transfer means 8 is turned to position the holding means 81 at a position above the chuck table 3. Then, the holding means 81 is raised, and the reversing motor 82 is operated to reverse the front and back of the semiconductor wafer 10 as shown in FIG. As a result, in the semiconductor wafer 10, the surface 10a coated with the resin film 700 is on the upper side. In this way, when the front and back of the semiconductor wafer 10 are reversed, the holding means 81 of the wafer transport means 8 is lowered and placed on the suction chuck 32 of the chuck table 3. The semiconductor wafer 10 is sucked and held by the suction chuck 32 by operating a suction means (not shown). If the semiconductor wafer 10 is sucked and held on the chuck table 3 in this way, the wafer transport means 8 is returned to the position shown in FIG.

  As described above, the chuck table 3 that sucks and holds the semiconductor wafer 10 is positioned directly below the image pickup means 5 disposed in the laser beam irradiation means 4 by a moving means (not shown). Next, the alignment of the street 101 formed in the semiconductor wafer 10 in a predetermined direction by the imaging means 5 and a control means (not shown) and the condenser 42 of the laser beam irradiation means 4 that irradiates the laser beam along the street 101 is performed. Image processing such as pattern matching is performed, and alignment of the laser beam irradiation position is performed. The alignment of the laser beam irradiation position is similarly performed on the street 101 formed on the semiconductor wafer 10 and extending at right angles to the predetermined direction. At this time, the resin film 700 is formed on the surface 10a where the street 101 of the semiconductor wafer 10 is formed. However, if the resin film 700 is not transparent, it can be imaged with infrared rays and aligned from the surface.

  If the street 101 formed on the semiconductor wafer 10 held on the chuck table 3 is detected as described above and the laser beam irradiation position is aligned, as shown in FIG. The chuck table 3 is moved to a laser beam irradiation region where the condenser 42 of the laser beam application means 4 for irradiating the laser beam is located, and a predetermined street 101 is positioned immediately below the condenser 42. At this time, as shown in FIG. 11A, the semiconductor wafer 10 is positioned such that one end of the street 101 (the left end in FIG. 11A) is located directly below the condenser 42. Next, the chuck table 3, that is, the semiconductor wafer 10 is moved at a predetermined processing feed speed in the direction indicated by the arrow X 1 in FIG. 11A while irradiating a pulse laser beam from the condenser 42 of the laser beam irradiation means 4 (laser beam). Irradiation step). Then, as shown in FIG. 11B, when the other end of the street 101 (the right end in FIG. 11B) reaches a position directly below the condenser 42, the irradiation of the pulse laser beam is stopped and the chuck table 3 is stopped. That is, the movement of the semiconductor wafer 10 is stopped. In this laser beam irradiation step, the condensing point P of the pulse laser beam is matched with the vicinity of the surface of the street 101.

  By performing the laser beam irradiation process described above, a laser processing groove 120 is formed on the street 101 of the semiconductor wafer 10 as shown in FIG. At this time, even if the debris 130 is generated by the irradiation of the laser beam as shown in FIG. 12, the debris 130 is blocked by the resin film 700 and does not adhere to the device 102 and the bonding pad. Then, the laser beam irradiation process described above is performed on all the streets 101 of the semiconductor wafer 10.

In addition, the said laser beam irradiation process is performed on the following process conditions, for example.
Laser light source: YVO4 laser or YAG laser Wavelength: 355 nm
Repetition frequency: 20 kHz
Output: 3W
Pulse width: 0.1 ns
Condensing spot diameter: φ5μm
Processing feed rate: 100 mm / sec

  If the laser beam irradiation process described above is performed along all the streets 101 of the semiconductor wafer 10, the chuck table 3 holding the semiconductor wafer 10 is first returned to the position where the semiconductor wafer 10 is sucked and held. The suction holding of the semiconductor wafer 10 is released. Next, the wafer immersion means 9 is operated to position the holding means 91 above the lowered semiconductor wafer 10 placed on the chuck table 3, and the holding means 91 sucks and holds the semiconductor wafer 10, and the cleaning means 16. Transport to. The processed semiconductor wafer 10 conveyed to the cleaning means 16 is cleaned with cleaning water and dried (cleaning process). In the cleaning by the cleaning means 16, since the resin film 700 coated on the surface 10a of the semiconductor wafer 10 is formed of the water-soluble resin as described above, the resin film 700 can be easily washed away. The debris 130 generated during the laser processing is also removed.

  When the above-described cleaning process is completed, the wafer transport unit 8 is operated, and the holding unit 81 sucks and holds the annular frame 11 that supports the processed semiconductor wafer 10 via the protective tape. The wafer transport means 8 transports the suctioned and held semiconductor wafer 10 to the temporary placement table 15. The processed semiconductor wafer 10 conveyed to the temporary placement table 15 is stored in a predetermined position of the cassette 13 by the workpiece unloading means 14.

The perspective view of the laser processing apparatus comprised according to this invention. Sectional drawing of the wafer immersion means with which the laser processing apparatus shown in FIG. 1 is equipped. The perspective view of the semiconductor wafer as a to-be-processed object processed with the laser processing apparatus shown in FIG. The perspective view which shows the state holding the semiconductor wafer carried out to the temporary placement table by the wafer conveyance means with which the laser processing apparatus shown in FIG. 1 is equipped. The perspective view which shows the state which reversed the front and back of the semiconductor wafer hold | maintained by the wafer conveyance means as shown in FIG. The perspective view which shows the state which attracts and holds the semiconductor wafer hold | maintained at the wafer conveyance means by the wafer immersion means. Sectional drawing which shows the state which immersed the surface of the semiconductor wafer hold | maintained by the wafer immersion means to the liquid level of the liquid resin stored by the liquid resin pool. Sectional drawing which shows the state which is rotating the semiconductor wafer with which liquid resin was adhered to the surface hold | maintained by the wafer immersion means. The principal part expanded sectional view of the semiconductor wafer by which the resin film was coat | covered on the surface. The perspective view which shows the state which reversed the front and back of the semiconductor wafer hold | maintained by the wafer conveyance means and the resin film was coat | covered on the surface. Explanatory drawing which shows the laser beam irradiation process by the laser processing apparatus shown in FIG. The principal part expanded sectional view of the semiconductor wafer as a to-be-processed object laser-processed by the laser beam irradiation process shown in FIG.

Explanation of symbols

2: Device housing 3: Chuck table 4: Laser beam irradiation means 41: Casing 42: Light collector 5: Imaging mechanism 6: Display means 7: Liquid resin pool 70: Liquid resin 700: Resin coating 71: Lid 8: Wafer transport means 81: Holding means 82: Reversing motor 83: Support means 9: Wafer immersion means 91: Holding means 911: Holding member 912: Suction pad 92: Support means 921: Air cylinder 922: Rotating motor 923: Support arm 924: Swivel motor 93 : Air cylinder 94: Press member 10: Semiconductor wafer 101: Street 102: Device 110: Protective coating 11: Annular frame 12: Protective tape 13: Cassette 14: Workpiece carrying / carrying means 15: Temporary table 16: Cleaning means

Claims (4)

A liquid resin coating apparatus that coats a liquid resin on the surface of a wafer,
A liquid resin pool for storing the liquid resin, and a wafer immersion means for holding the back surface of the wafer and immersing the surface of the wafer in the liquid surface of the liquid resin stored in the liquid resin pool to coat the resin film on the surface of the wafer. ,
A liquid resin coating apparatus characterized by that.   The wafer dipping means includes a holding means for holding an annular frame to which a protective tape to which the back surface of the wafer is attached is attached, and a region attached to the holding means to which the wafer is attached. The liquid resin coating apparatus according to claim 1, comprising pressing means for pressing.   3. The liquid resin coating apparatus according to claim 1, wherein the wafer immersion means includes a rotation driving means for rotating the holding means. In a laser processing apparatus comprising: a chuck table that holds a wafer; and a laser beam irradiation unit that irradiates a wafer held by the chuck table with a laser beam,
A liquid resin pool for storing the liquid resin, and a wafer immersion means for holding the back surface of the wafer and immersing the surface of the wafer in the liquid surface of the liquid resin stored in the liquid resin pool to cover the liquid resin on the surface of the wafer And a wafer transport means for receiving the wafer held by the wafer immersion means and having a surface coated with a resin film from the wafer immersion means, and placing the back surface of the wafer on the chuck table.
Laser processing equipment characterized by that.

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