JPH11121323A - Method and equipment for manufacture semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a resist film having uniform thickness with a small amount of resist by a method wherein resist is applied through a board with through- holes, and a blade is allowed to slide on the surface of a resist layer, or resist is applied and a blade is allowed to slide on the surface of a resist layer in a resist case. SOLUTION: A semiconductor wafer 1 is provided under a board 2, a space between the semiconductor wafer 1 and the board 2 is controlled so as to be lightly larger than the target thickness of a resist film, and resist 3 is fed to fill up a space between the board 2 and the semiconductor wafer 1 through through-holes 4 from above the board 2. Then, the semiconductor wafer 1 is moved in parallel direction, while keeping a distance between the semiconductor wafer 1 and the board 2 constant, a blade 6 provided at the edge of the board 2 is made to slide on the surface of resist film 5 just after the surface of the resist film 5 is exposed so as to make the resist film smooth and uniform in thickness. Moreover, instead of moving the semiconductor wafer 1 in parallel, the board 2 and the blade 6 may be moved in parallel.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional manufacturing method and apparatus for applying a resist to a semiconductor wafer.

The center of the semiconductor wafer 31 is the chuck 3
It is transported and installed so as to overlap the center of the second rotation shaft 33.
After fixing the semiconductor wafer 31 to the chuck 32 by vacuum,
A predetermined amount of the resist 34 is discharged from the resist supply nozzle 35 to the center of the semiconductor wafer 31 in a stationary state or while rotating at a predetermined rotation speed. Thereafter, by rotating the semiconductor wafer 31 at a predetermined number of revolutions, the resist 34 discharged to the central portion is spread to the peripheral portion, and the semiconductor wafer 31 is rotated.
1. A resist film 36 having a uniform thickness is formed over the entire surface.

[0004]

However, in the conventional structure, in order to form a uniform resist film, a very large amount of resist is supplied, which is several tens to 100 times as large as the resist finally remaining on the semiconductor wafer. Because of the necessity, there was a problem that the process cost was high. That is, when the resist is supplied by the nozzle, the resist is supplied to be extremely biased toward the center of the semiconductor wafer. In order to spread the resist over the entire surface of the semiconductor wafer, it is necessary to rotate the semiconductor wafer at high speed and move the resist to the peripheral portion by centrifugal force.

[0005] Since the resist spreads radially and unevenly,
A large amount of resist scatters from the peripheral portion to the outside of the semiconductor wafer until the entire surface of the semiconductor wafer is spread. When the resist reaches the peripheral portion for the first time, the unevenness is large and the uniformity of the film thickness is very poor. In order to make this uniform, it is necessary to rotate the semiconductor wafer for a long time to flatten the unevenness, and here also a large amount of resist is scattered. Furthermore, not only are the irregularities flattened while the semiconductor wafer is rotated for a long time, but also a large amount of resist is scattered because the thickness is reduced as a whole. Finally, the resist forming the resist film remaining on the semiconductor wafer becomes about several tenths to one hundredth of the resist initially supplied to the semiconductor wafer.

[0006] Further, since the unit cost of the resist is increasing with the improvement in the performance of the resist, the process cost is extremely high in the conventional manufacturing method and manufacturing apparatus.

An object of the present invention is to make it possible to form a uniform film over the entire surface of a semiconductor wafer with a minimum necessary resist, and to reduce the process cost.

[0008]

In order to solve this problem, a method of manufacturing a semiconductor device according to the present invention is to form a substrate having the same shape as a semiconductor wafer and having a plurality of through holes in parallel at a predetermined interval from the semiconductor wafer. While holding, a resist is supplied from a through hole between the semiconductor wafer and the substrate. Further, the substrate is moved in a direction parallel to the semiconductor wafer while maintaining a predetermined distance from the semiconductor wafer, and the surface is slid with a blade at the same time when the resist is exposed.

[0009] With this, the resist is not scattered from the outer peripheral portion of the semiconductor wafer, and more than the resist necessary for a predetermined film thickness is supplied by adjusting the distance between the substrate and the semiconductor wafer. A resist film having a uniform thickness can be obtained by forming a resist film on the surface and sliding the surface of the formed resist film with a blade.

Further, the method of manufacturing a semiconductor device according to the present invention comprises:
The surface of the semiconductor wafer is immersed in the resist held in the container, and a resist film is formed on the surface of the semiconductor wafer. Next, after lifting the semiconductor wafer, the surface of the resist film is slid and smoothed by a blade moving at a predetermined distance from the surface. Thereby, a resist film having a more uniform thickness can be obtained.

Further, a method of manufacturing a semiconductor device according to the present invention
It is preferable to smooth the resist film by sliding the blade while supplying a solvent having good resist solubility.

Further, a method of manufacturing a semiconductor device according to the present invention
It is preferable to collect excess resist in a container.

Further, the apparatus for manufacturing a semiconductor device according to the present invention comprises:
A substrate having the same shape as the semiconductor wafer and having a plurality of through holes, a supply device for supplying a resist between the substrate and the semiconductor wafer through the through holes, and a horizontal direction together with the substrate while maintaining a certain distance from the semiconductor wafer , And the driving device.

Further, the semiconductor device manufacturing apparatus of the present invention
A container that holds the resist, a device that adsorbs and supports the back surface of the semiconductor wafer, a moving device that applies the resist by bringing the surface of the semiconductor wafer into contact with the liquid surface of the resist in the container, and maintains a certain distance from the surface of the semiconductor wafer And a moving blade.

Further, the apparatus for manufacturing a semiconductor device of the present invention comprises:
It is preferable to provide a nozzle for supplying a solvent near the tip of the blade.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

FIGS. 1A to 1C show a method of manufacturing a semiconductor device according to the present invention. The semiconductor wafer 1 is placed under the substrate 2 by a carrier or the like, and the distance between the semiconductor wafer 1 and the substrate 2 is adjusted to be slightly larger than a target film thickness (FIG. 1A). The resist 3 is supplied from the upper portion of the substrate 2 to the space between the substrate 2 and the semiconductor wafer 1 through the through hole 4 and is filled (FIG. 1B). The semiconductor wafer 1 is moved in a parallel direction while maintaining a distance between the semiconductor wafer 1 and the substrate 2. Immediately after the surface of the resist film 5 is exposed, the surface of the resist film 5 is slid with a blade 6 installed at the end of the substrate 2 to make the surface smooth and uniform in film thickness (FIG. 1C).

As described above, according to the present embodiment, the semiconductor wafer 1 is formed through the through-hole 4 with a minimum necessary resist amount.
A resist film 5 is formed on the surface, and the surface is further slid by a blade 6, so that the film thickness can be made uniform. In the above invention, the semiconductor wafer 1 is moved in the parallel direction in (c), but the substrate 2 and the blade 6 may be moved in the parallel direction.

Next, a second embodiment of the present invention will be described with reference to the drawings. FIG.
(D) shows a method for manufacturing a semiconductor device of the present invention. The semiconductor wafer 11 is moved by a carrier or the like, and the back surface is suction-supported by the chuck 12 (FIG. 2A). As the resist container 13 moves up and down in the direction of the semiconductor wafer 11,
A resist 14 is applied to the surface of the semiconductor wafer 11 (FIG. 2)
(B)). The semiconductor wafer 11 is separated from the liquid surface of the resist 14 (FIG. 2C), and after rotating by 90 degrees about the fulcrum 15, the surface of the resist film 17 is slid by the blade 16 while keeping a constant distance from the semiconductor wafer 11. I do. The resist 18 shaved off from the semiconductor wafer 11 by the blade 16 is collected in a container (FIG. 2D).

As described above, according to the present embodiment, the application of the resist 14 and the blade 16
By sliding the surface of the resist 14 in the above, all except for the resist that finally remains on the surface of the semiconductor wafer 11 is collected in the container. Further, uniformity of the film thickness is achieved by sliding with the blade.

In this embodiment, although the resist container 13 is moved in the direction of the semiconductor wafer by the driving device 19, the semiconductor wafer 11 may be moved in the direction of the resist container 13. At the fulcrum 15, the semiconductor wafer 11 is
Although rotated by an angle, any angle at which the blade 16 can slide easily may be used.

Next, a third embodiment of the present invention will be described with reference to the drawings. FIG. 3 shows a method of sliding the resist surface in the method of manufacturing a semiconductor device according to the present invention.
A resist film 22 is formed on a semiconductor wafer 21.
The surface of the resist film 22 is slid and smoothed by a blade 25 while supplying a solvent 24 from a pipe 23. By supplying a small amount of the solvent 24 to the surface of the resist film 22 and dissolving and softening the surface of the resist film 22, the sliding effect of the blade 25 is increased, and a more uniform film thickness can be obtained.

[0023]

As described above, according to the present invention, a resist is applied to a substrate having a through hole and the surface is slid with a blade, or the resist is applied in a resist container and the surface is slid with a blade. Accordingly, an excellent method and apparatus for manufacturing a semiconductor device, which can obtain a resist film having a uniform thickness with a small amount of resist, can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a view illustrating a method of manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 3 is a diagram showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a diagram showing a conventional method of manufacturing a semiconductor device.

[Explanation of symbols]

 Reference Signs List 1, 11, 21 semiconductor wafer 2 substrate 3, 14, 18 resist 4 through hole 5, 17, 22 resist film 6, 16, 25 blade 12 wafer chuck 13 resist container 15 fulcrum 19 drive unit 23 pipe 24 solvent

Claims (7)

[Claims] A step of supplying a resist between a semiconductor wafer and a substrate having the same shape as the semiconductor wafer and facing the semiconductor wafer through a through hole of the substrate to form a resist film; A semiconductor device comprising the steps of: moving a substrate in parallel with the semiconductor wafer while maintaining a certain distance, separating the substrate and the resist film; and sliding the resist film surface with a blade to smooth the resist film. Production method. 2. A step of adsorbing and supporting the back surface of the semiconductor wafer, immersing the surface of the semiconductor wafer in a resist liquid level in a resist container to form a resist film, lifting the semiconductor wafer, and using a blade to remove the resist film surface. Sliding and smoothing the semiconductor device. 3. The semiconductor device according to claim 1, wherein the resist film is slid by the blade while supplying a solvent having good resist solubility to smooth the resist film. Method. 4. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of collecting an extra resist in a resist container. 5. A substrate having the same shape as the semiconductor wafer and having a through hole, a supply device for supplying a resist between the substrate and the semiconductor wafer through the through hole, and maintaining a constant distance from the semiconductor wafer. An apparatus for manufacturing a semiconductor device, comprising: a blade moving in a parallel direction together with the substrate, and the driving device. 6. A resist container, a device for adsorbing and supporting the back surface of the semiconductor wafer, a moving device for bringing the surface of the semiconductor wafer into contact with a resist liquid surface of the resist container to form a resist film, An apparatus for manufacturing a semiconductor device, comprising: a blade that moves while maintaining a fixed distance. 7. The semiconductor device manufacturing apparatus according to claim 5, further comprising a nozzle for supplying a solvent near the tip of the blade.