JP2007204312A - Method for manufacturing silicon single crystal - Google Patents
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- JP2007204312A JP2007204312A JP2006024696A JP2006024696A JP2007204312A JP 2007204312 A JP2007204312 A JP 2007204312A JP 2006024696 A JP2006024696 A JP 2006024696A JP 2006024696 A JP2006024696 A JP 2006024696A JP 2007204312 A JP2007204312 A JP 2007204312A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 116
- 239000010703 silicon Substances 0.000 title claims abstract description 116
- 239000013078 crystal Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 31
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 10
- 230000007423 decrease Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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Abstract
Description
本発明は、酸素濃度の径方向面内分布が均一であるシリコン単結晶を製造できるシリコン単結晶の製造方法に関する。 The present invention relates to a method for producing a silicon single crystal capable of producing a silicon single crystal having a uniform oxygen concentration radial in-plane distribution.
シリコン単結晶は、坩堝に収容された多結晶シリコン原料をヒータで加熱してシリコン融液とし、チョクラルスキー法（以下、「ＣＺ法」と略記する。）によりシリコン融液から引き上げながら成長させることにより製造される。シリコン基板は、上記の方法で製造されたシリコン単結晶をスライス（切断）することにより製造される。近年、半導体回路の高集積化による素子の微細化に伴い、その基板となるシリコン単結晶に対する品質要求が高まってきている。 A silicon single crystal is grown while being pulled from a silicon melt by the Czochralski method (hereinafter abbreviated as “CZ method”) by heating a polycrystalline silicon raw material contained in a crucible with a heater to form a silicon melt. It is manufactured by. The silicon substrate is manufactured by slicing (cutting) the silicon single crystal manufactured by the above method. In recent years, with the miniaturization of elements due to high integration of semiconductor circuits, quality requirements for a silicon single crystal serving as a substrate have increased.
従来からシリコン融液の対流を抑制することができ均一なシリコン単結晶が得られる方法として、磁場中引き上げ法（以下、「ＭＣＺ法」と略記する。）が知られている（例えば、特許文献１を参照）。
しかしながら、特許文献１の技術は、シリコン単結晶の引き上げ速度を低下させることなく、シリコン単結晶中の酸素濃度を増加させることを目的とするものであり、酸素濃度の径方向面内分布が均一であるシリコン単結晶を製造できるものではなかった。
このため、シリコン単結晶の酸素濃度の径方向面内分布におけるばらつきを小さくすることが要求されていた。特に、シリコン単結晶の径方向面内における外周に近い領域で酸素濃度が少なくなる現象が発生することがあり、問題となっていた。この問題を解決するため、従来から、シリコン単結晶を製造する際に必要な外形寸法よりも大きい外形寸法の単結晶を成長させ、成長後に外周部分を削って酸素濃度が所定濃度よりも少なくなっている部分をとり除く方法が行われている。しかしながら、単結晶の成長後に外周部分を削る場合、無駄になる減量が多いことや、削る手間がかかるという不都合があった。
However, the technique of Patent Document 1 aims to increase the oxygen concentration in the silicon single crystal without reducing the pulling rate of the silicon single crystal, and the radial in-plane distribution of the oxygen concentration is uniform. It was not possible to produce a silicon single crystal.
For this reason, it has been required to reduce the variation in the radial in-plane distribution of the oxygen concentration of the silicon single crystal. In particular, a phenomenon that the oxygen concentration decreases in a region near the outer periphery in the radial direction plane of the silicon single crystal may occur, which is a problem. In order to solve this problem, conventionally, a single crystal having an outer dimension larger than that required for manufacturing a silicon single crystal is grown, and after the growth, the outer peripheral portion is shaved to reduce the oxygen concentration below a predetermined concentration. The method of removing the part which is done is done. However, when the outer peripheral portion is cut after the growth of the single crystal, there are inconveniences that a lot of weight loss is wasted and that it takes time and effort to cut.
本発明は、上記事情に鑑みてなされたものであり、酸素濃度の径方向面内分布が均一であるシリコン単結晶を製造できるシリコン単結晶の製造方法を実現することを目的とする。 This invention is made | formed in view of the said situation, and it aims at implement | achieving the manufacturing method of the silicon single crystal which can manufacture the silicon single crystal with which radial direction surface distribution of oxygen concentration is uniform.
上記課題を解決するために、本発明のシリコン単結晶の製造方法は、坩堝に収容されたシリコン融液からシリコン単結晶を引き上げながら成長させて製造するシリコン単結晶の製造方法において、前記シリコン単結晶の径方向に磁場を印加する磁場印加ステップを備え、前記シリコン融液の液面に対する前記磁場の中心高さ位置を、前記シリコン単結晶中の酸素濃度の径方向面内分布が均一になる位置としたことを特徴とする。
本発明によれば、シリコン融液の液面に対する前記磁場の中心高さ位置を、シリコン単結晶中の酸素濃度の径方向面内分布が均一になる位置としているので、酸素濃度の径方向面内分布が均一であるシリコン単結晶を製造できる。
In order to solve the above-described problems, a method for producing a silicon single crystal according to the present invention is the method for producing a silicon single crystal, wherein the silicon single crystal is produced by growing while pulling up a silicon single crystal from a silicon melt contained in a crucible. A magnetic field applying step for applying a magnetic field in the radial direction of the crystal, and the radial distribution in the radial direction of the oxygen concentration in the silicon single crystal is uniform at the center height position of the magnetic field with respect to the liquid surface of the silicon melt. It is characterized by its position.
According to the present invention, the position of the center height of the magnetic field with respect to the liquid surface of the silicon melt is a position where the distribution in the radial direction of the oxygen concentration in the silicon single crystal is uniform. A silicon single crystal having a uniform internal distribution can be manufactured.
また、上記のシリコン単結晶の製造方法においては、前記シリコン融液の液面に対する前記磁場の中心高さ位置を、液面上方０〜８０ｍｍの範囲とすることができる。
このような製造方法とすることで、酸素濃度の径方向面内分布が均一であるシリコン単結晶を容易に製造できる。
In the method for producing a silicon single crystal, the center height position of the magnetic field with respect to the liquid surface of the silicon melt can be set in a range of 0 to 80 mm above the liquid surface.
By adopting such a manufacturing method, a silicon single crystal having a uniform distribution in the radial direction of the oxygen concentration can be easily manufactured.
また、上記のシリコン単結晶の製造方法においては、前記シリコン融液の液面に対する前記磁場の中心高さ位置を、液面上方６０〜８０ｍｍの範囲とすることができる。
このような製造方法とすることで、シリコン単結晶の径方向面内における外周に近い領域で酸素濃度が少なくなる現象の発生を抑止することができ、酸素濃度の径方向面内分布が外周に近い領域まで均一であるシリコン単結晶を製造できる。
In the method for producing a silicon single crystal, the center height position of the magnetic field with respect to the liquid surface of the silicon melt can be set in a range of 60 to 80 mm above the liquid surface.
By using such a manufacturing method, it is possible to suppress the occurrence of a phenomenon in which the oxygen concentration decreases in a region near the outer periphery in the radial plane of the silicon single crystal, and the radial in-plane distribution of the oxygen concentration is on the outer periphery. A silicon single crystal that is uniform up to a near region can be manufactured.
本発明によれば、シリコン融液の液面に対する前記磁場の中心高さ位置を、シリコン単結晶中の酸素濃度の径方向面内分布が均一になる位置としているので、酸素濃度の径方向面内分布が均一であるシリコン単結晶を製造できる。 According to the present invention, the position of the center height of the magnetic field with respect to the liquid surface of the silicon melt is a position where the distribution in the radial direction of the oxygen concentration in the silicon single crystal is uniform. A silicon single crystal having a uniform internal distribution can be manufactured.
以下、図面を参照して本発明の一実施形態によるシリコン単結晶の製造方法について詳細に説明する。図１は、本発明の第１実施形態によるシリコン単結晶の製造方法において使用するシリコン単結晶製造装置の概略断面図である。図１において、符号２は石英で形成された坩堝であり、坩堝２の両側には一対の磁気コイル１、１が所定の間隔を空けて対向配置されている。また、坩堝２は、坩堝２から所定の間隔をあけて坩堝２と磁気コイル１、１との間に配置された筒状のヒータ（図示略）により包囲されている。
Hereinafter, a method for producing a silicon single crystal according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic cross-sectional view of a silicon single crystal manufacturing apparatus used in the method for manufacturing a silicon single crystal according to the first embodiment of the present invention. In FIG. 1,
坩堝２には、坩堝２に投入された高純度のシリコン多結晶体をヒータで加熱・融解して得られたシリコン融液Ｍが収容されている。シリコン単結晶ＳＩは、下面がシリコン融液Ｍの液面に接するように、引上げワイヤー（図示略）により坩堝２の回転中心に向って垂下されている。
坩堝２は不図示の坩堝駆動手段に接続され、坩堝２が水平面内で回転し得るとともに、シリコン融液Ｍの液面変化に対応して上下方向に移動可能となっている。また、磁気コイル１、１は不図示の磁気コイル駆動手段により上下方向に移動可能とされ、シリコン融液Ｍの液面変化に対応して磁場の中心高さ位置Ａを変化させることができるようになっている。
The
The
このようなシリコン単結晶製造装置を用いてシリコン単結晶ＳＩを製造するには、まずヒータで坩堝２内に収容された多結晶シリコン原料を加熱してシリコン融液Ｍとし、シリコン融液Ｍの温度を所定の温度に設定する。次いで、磁気コイル１、１からシリコン単結晶の径方向に磁場９を印加し、先端に種結晶が取り付けられた引上げワイヤーを下方へ引き下げてシリコン融液Ｍ表面に種結晶の下端を接触させてから上方への引き上げを開始する。
In order to manufacture a silicon single crystal SI using such a silicon single crystal manufacturing apparatus, first, a polycrystalline silicon raw material housed in the
このとき、シリコン融液Ｍの液面に対する磁場９の中心Ａ高さ位置Ｂを、シリコン単結晶中の酸素濃度の径方向面内分布が均一になる位置とする。具体的には、シリコン融液の液面に対する前記磁場の中心高さ位置Ｂを、液面上方０〜８０ｍｍの範囲とすることが望ましく、液面上方６０〜８０ｍｍの範囲とすることがより望ましい。前記磁場の中心高さ位置Ｂを０ｍｍ未満（つまり液面に対して下方）とすると、得られたシリコン単結晶中の酸素濃度の径方向面内分布におけるばらつきが大きくなるため望ましくない。また、前記磁場の中心高さ位置Ｂが液面上方８０ｍｍを越えると、シリコン融液の対流を抑制する効果が十分に得られなくなるおそれが生じるため望ましくない。さらに、前記磁場の中心高さ位置Ｂを液面上方６０〜８０ｍｍの範囲とした場合、シリコン単結晶の径方向面内における外周に近い領域で酸素濃度が少なくなる現象の発生を抑止することができる。 At this time, the center A height position B of the magnetic field 9 with respect to the liquid surface of the silicon melt M is a position where the radial in-plane distribution of the oxygen concentration in the silicon single crystal becomes uniform. Specifically, the center height position B of the magnetic field with respect to the liquid surface of the silicon melt is preferably in the range of 0 to 80 mm above the liquid surface, and more preferably in the range of 60 to 80 mm above the liquid surface. . If the center height position B of the magnetic field is less than 0 mm (that is, downward with respect to the liquid surface), the variation in the radial in-plane distribution of the oxygen concentration in the obtained silicon single crystal is not desirable. Further, if the center height position B of the magnetic field exceeds 80 mm above the liquid surface, the effect of suppressing the convection of the silicon melt may not be obtained sufficiently, which is not desirable. Furthermore, when the center height position B of the magnetic field is in the range of 60 to 80 mm above the liquid surface, it is possible to suppress the occurrence of a phenomenon in which the oxygen concentration decreases in a region close to the outer periphery in the radial plane of the silicon single crystal. it can.
また、磁気コイル１、１の中心における磁束密度は、２０００〜４０００ガウスとすることができ、２５００〜３５００ガウスとすることが望ましい。磁気コイル１、１の中心における磁束密度が４０００ガウスを越えると、シリコン単結晶の径方向面内における外周に近い領域で酸素濃度が少なくなる現象が顕著になるため望ましくない。また、磁気コイル１、１の中心における磁束密度が２０００ガウス未満であると、シリコン融液の対流を抑制する効果が十分に得られなくなるおそれが生じるため望ましくない。
なお、磁気コイル１、１の半径、磁気コイル１、１と坩堝２との距離、磁気コイル１、１相互間の距離、坩堝２の回転数、引き上げ速度などの製造条件は、適宜選択することができ、特に限定されない。
The magnetic flux density at the center of the magnetic coils 1 and 1 can be 2000 to 4000 gauss, and is preferably 2500 to 3500 gauss. If the magnetic flux density at the center of the magnetic coils 1 and exceeds 4000 gauss, the phenomenon that the oxygen concentration decreases in a region near the outer periphery in the radial plane of the silicon single crystal is not desirable. Further, if the magnetic flux density at the center of the magnetic coils 1 and 1 is less than 2000 gauss, the effect of suppressing the convection of the silicon melt may not be obtained sufficiently, which is not desirable.
The manufacturing conditions such as the radius of the magnetic coils 1 and 1, the distance between the magnetic coils 1 and 1 and the
「実施例」
（実験例１）
シリコン単結晶ＳＩの直径Ｄを３００ｍｍ、磁場９の中心Ａの高さ位置をシリコン融液Ｍの液面の上方８０ｍｍとし、磁気コイル１、１の中心における磁束密度を３０００ガウスとし、坩堝２を０．１〜２０［ｍｉｎ−１］程度の回転速度で回転させるとともに、引き上げるシリコン単結晶ＳＩを１〜２５［ｍｉｎ−１］程度の回転速度で逆回転させ、シリコン単結晶ＳＩの引き上げ速度０．３５〜０．７５［ｍｍ/ｍｉｎ］でシリコン融液Ｍを固化させることにより長さ１６００ｍｍのシリコン単結晶製造を製造し、得られたシリコン単結晶をシリコン単結晶の種結晶側から長さ２００ｍｍの位置でスライスしてシリコンウェーハを得た。
"Example"
(Experimental example 1)
The diameter D of the silicon single crystal SI is 300 mm, the height of the center A of the magnetic field 9 is 80 mm above the surface of the silicon melt M, the magnetic flux density at the center of the magnetic coils 1 and 1 is 3000 gauss, and the
（実験例２）
磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面の上方６０ｍｍとしたこと以外は実験例１と同様にしてシリコン単結晶を製造し、得られたシリコン単結晶を実験例１と同様にしてスライスしてシリコンウェーハを得た。
（実験例３）
磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面とした（０ｍｍ）こと以外は実験例１と同様にしてシリコン単結晶を製造し、得られたシリコン単結晶を実験例１と同様にしてスライスしてシリコンウェーハを得た。
（実験例４）
磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面の下方１３０ｍｍとしたこと以外は実験例１と同様にしてシリコン単結晶を製造し、得られたシリコン単結晶を実験例１と同様にしてスライスしてシリコンウェーハを得た。
(Experimental example 2)
A silicon single crystal was produced in the same manner as in Experimental Example 1 except that the height position B of the center A of the magnetic field 9 was set to 60 mm above the liquid surface of the silicon melt M. A silicon wafer was obtained by slicing in the same manner as described above.
(Experimental example 3)
A silicon single crystal was manufactured in the same manner as in Experimental Example 1 except that the height position B of the center A of the magnetic field 9 was set to the surface of the silicon melt M (0 mm). A silicon wafer was obtained by slicing in the same manner as described above.
(Experimental example 4)
A silicon single crystal was produced in the same manner as in Experimental Example 1 except that the height position B of the center A of the magnetic field 9 was set to 130 mm below the liquid surface of the silicon melt M. A silicon wafer was obtained by slicing in the same manner as described above.
実験例１〜実験例４で得られたシリコンウェーハの酸素濃度を調べることにより、シリコン単結晶の種結晶側から長さ２００ｍｍの位置でのシリコン単結晶中の酸素濃度の径方向面内分布を調べた。その結果を図２〜図５に示す。図２〜図５は、シリコンウェーハの中心からの距離と酸素濃度との関係を図２に示したグラフであり、図２には実験例２、図３には実験例１、図４には実験例４、図５には実験例３の結果を示した。なお、図２〜図５において、縦軸の１目盛は、１×1017atoms/cm3である。
図４に示すように、磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面の下方１３０ｍｍとした実験例４では、酸素濃度の径方向面内分布におけるばらつきが大きく、径方向面内における外周に近い領域で急激に酸素濃度が少なくなっている。
これに対し、図５に示すように、磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面とした実験例３では、径方向面内における外周に近い中心から１３０ｍｍよりも外側の領域を除き、酸素濃度の径方向面内分布におけるばらつきが0.6×1017atoms/cm3（6%）程度であり、図４に示す実験例４と比較して小さくなっている。ここで、６％とは、（酸素濃度Max値 - Min値）/（Max値） で算出した割合である。
また、図３に示す磁場９の中心Ａの高さ位置Ｂをシリコン融液Ｍの液面の上方８０ｍｍとした実験例１や、図２に示す上方６０ｍｍとした実験例２では、酸素濃度の径方向面内分布におけるばらつきが面内全域に渡って0.3×1017atoms/cm3（3%）程度であり、実験例３や実験例４と比較して小さくなっている。ここで、３％も、同様に（酸素濃度Max値 - Min値）/（Max値） で算出した割合である。しかも、実験例１や実験例２では、実験例３や実験例４と比較して、径方向面内における外周に近い領域で酸素濃度が少なくなる現象が抑止されることが確認できた。
また、磁束密度は３０００Ｇに限らず２５００〜３５００Ｇの範囲内では同様の結果を得ることができた。
By examining the oxygen concentration of the silicon wafer obtained in Experimental Example 1 to Experimental Example 4, the distribution in the radial direction of the oxygen concentration in the silicon single crystal at a position 200 mm in length from the seed crystal side of the silicon single crystal was obtained. Examined. The results are shown in FIGS. 2 to 5 are graphs showing the relationship between the distance from the center of the silicon wafer and the oxygen concentration in FIG. 2. FIG. 2 shows experimental example 2, FIG. 3 shows experimental example 1, and FIG. Experimental Example 4 and FIG. 5 show the results of Experimental Example 3. 2 to 5, one scale on the vertical axis is 1 × 10 17 atoms / cm 3 .
As shown in FIG. 4, in Experimental Example 4 in which the height position B of the center A of the magnetic field 9 is 130 mm below the liquid surface of the silicon melt M, the variation in the radial in-plane distribution of oxygen concentration is large. The oxygen concentration rapidly decreases in a region near the outer periphery in the plane.
On the other hand, as shown in FIG. 5, in Experimental Example 3 in which the height position B of the center A of the magnetic field 9 is the liquid level of the silicon melt M, the outer side is more than 130 mm from the center near the outer periphery in the radial plane. Except for this region, the variation in the in-plane distribution of the oxygen concentration is about 0.6 × 10 17 atoms / cm 3 (6%), which is smaller than that of Experimental Example 4 shown in FIG. Here, 6% is a ratio calculated by (Oxygen concentration Max value−Min value) / (Max value).
Further, in Experimental Example 1 in which the height position B of the center A of the magnetic field 9 shown in FIG. 3 is 80 mm above the liquid surface of the silicon melt M, and in Experimental Example 2 in which 60 mm is shown in FIG. The variation in the radial in-plane distribution is about 0.3 × 10 17 atoms / cm 3 (3%) over the entire in-plane, and is smaller than those in Experimental Example 3 and Experimental Example 4. Here, 3% is a ratio similarly calculated by (oxygen concentration Max value−Min value) / (Max value). Moreover, in Experimental Example 1 and Experimental Example 2, it was confirmed that the phenomenon in which the oxygen concentration decreases in a region near the outer periphery in the radial direction surface is suppressed as compared with Experimental Example 3 and Experimental Example 4.
Further, the magnetic flux density is not limited to 3000G, and the same result can be obtained within the range of 2500-3500G.
以上、本発明の実施形態について説明したが、本発明は上記の内容に限られず、本発明の範囲内で自由に変更可能である。例えば、本発明は製造するシリコン単結晶ＳＩの径（直径）の大きさに制限はなく、任意の直径を有するシリコン単結晶を製造する場合に適用することができる。 As mentioned above, although embodiment of this invention was described, this invention is not restricted to said content, It can change freely within the scope of the present invention. For example, the present invention is not limited in the size (diameter) of the silicon single crystal SI to be manufactured, and can be applied to manufacturing a silicon single crystal having an arbitrary diameter.
１、１：磁気コイル、２：坩堝、９：磁場、Ｍ：シリコン融液、ＳＩ：シリコン単結晶、Ａ：磁場の中心
1, 1: Magnetic coil, 2: Crucible, 9: Magnetic field, M: Silicon melt, SI: Silicon single crystal, A: Center of magnetic field
Claims (3)
前記シリコン単結晶の径方向に磁場を印加する磁場印加ステップを備え、
前記シリコン融液の液面に対する前記磁場の中心高さ位置を、前記シリコン単結晶中の酸素濃度の径方向面内分布が均一になる位置としたことを特徴とするシリコン単結晶の製造方法。 In a method for producing a silicon single crystal, which is produced by growing a silicon single crystal from a silicon melt stored in a crucible
A magnetic field application step of applying a magnetic field in a radial direction of the silicon single crystal,
A method for producing a silicon single crystal, characterized in that a center height position of the magnetic field with respect to a liquid surface of the silicon melt is a position where a radial in-plane distribution of oxygen concentration in the silicon single crystal becomes uniform.
2. The method for producing a silicon single crystal according to claim 1, wherein a center height position of the magnetic field with respect to a liquid surface of the silicon melt is in a range of 60 to 80 mm above the liquid surface.
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| JP2010024120A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Silicon single crystal and its growing method |
| KR20180094102A (en) * | 2015-12-22 | 2018-08-22 | 실트로닉 아게 | Silicon wafers with homogeneous radial oxygen variations |
| US20180237939A1 (en) * | 2015-08-19 | 2018-08-23 | Sk Siltron Co., Ltd. | Apparatus for growing single crystalline ingot and method for growing same |
| CN114086241A (en) * | 2021-11-25 | 2022-02-25 | 西安奕斯伟材料科技有限公司 | Method for drawing silicon single crystal rod and silicon single crystal rod |
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| JP2010024120A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Silicon single crystal and its growing method |
| US10435809B2 (en) * | 2015-08-19 | 2019-10-08 | Sk Siltron Co., Ltd. | Apparatus for growing single crystalline ingot and method for growing same |
| US11214891B2 (en) | 2015-08-19 | 2022-01-04 | Sk Siltron Co., Ltd | Apparatus for growing single crystalline ingot and method for growing same |
| US20180237939A1 (en) * | 2015-08-19 | 2018-08-23 | Sk Siltron Co., Ltd. | Apparatus for growing single crystalline ingot and method for growing same |
| CN108474137A (en) * | 2015-12-22 | 2018-08-31 | 硅电子股份公司 | Silicon wafer with uniform radial oxygen variation |
| JP2019505467A (en) * | 2015-12-22 | 2019-02-28 | ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ | Silicon wafer with uniform radial oxygen variation |
| KR102089886B1 (en) * | 2015-12-22 | 2020-03-17 | 실트로닉 아게 | Silicon wafer with homogeneous radial oxygen change |
| US10731271B2 (en) | 2015-12-22 | 2020-08-04 | Siltronic Ag | Silicon wafer with homogeneous radial oxygen variation |
| CN108474137B (en) * | 2015-12-22 | 2021-02-26 | 硅电子股份公司 | Silicon wafer with uniform radial oxygen variation |
| KR20180094102A (en) * | 2015-12-22 | 2018-08-22 | 실트로닉 아게 | Silicon wafers with homogeneous radial oxygen variations |
| CN114086241A (en) * | 2021-11-25 | 2022-02-25 | 西安奕斯伟材料科技有限公司 | Method for drawing silicon single crystal rod and silicon single crystal rod |
| WO2023093460A1 (en) * | 2021-11-25 | 2023-06-01 | 西安奕斯伟材料科技有限公司 | Drawing method for monocrystalline silicon rod, and monocrystalline silicon rod |
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