JP2007201426A5 - - Google Patents

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Publication number
JP2007201426A5
JP2007201426A5 JP2006332801A JP2006332801A JP2007201426A5 JP 2007201426 A5 JP2007201426 A5 JP 2007201426A5 JP 2006332801 A JP2006332801 A JP 2006332801A JP 2006332801 A JP2006332801 A JP 2006332801A JP 2007201426 A5 JP2007201426 A5 JP 2007201426A5
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JP
Japan
Prior art keywords
region
gate electrode
pair
control gate
impurity regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006332801A
Other languages
English (en)
Japanese (ja)
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JP2007201426A (ja
JP5063097B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2006332801A priority Critical patent/JP5063097B2/ja
Priority claimed from JP2006332801A external-priority patent/JP5063097B2/ja
Publication of JP2007201426A publication Critical patent/JP2007201426A/ja
Publication of JP2007201426A5 publication Critical patent/JP2007201426A5/ja
Application granted granted Critical
Publication of JP5063097B2 publication Critical patent/JP5063097B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006332801A 2005-12-26 2006-12-11 半導体装置およびその作製方法 Expired - Fee Related JP5063097B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006332801A JP5063097B2 (ja) 2005-12-26 2006-12-11 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005373010 2005-12-26
JP2005373010 2005-12-26
JP2006332801A JP5063097B2 (ja) 2005-12-26 2006-12-11 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2007201426A JP2007201426A (ja) 2007-08-09
JP2007201426A5 true JP2007201426A5 (enrdf_load_stackoverflow) 2010-02-04
JP5063097B2 JP5063097B2 (ja) 2012-10-31

Family

ID=38455644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006332801A Expired - Fee Related JP5063097B2 (ja) 2005-12-26 2006-12-11 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP5063097B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5297610B2 (ja) * 2007-08-10 2013-09-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
KR101616368B1 (ko) * 2009-09-10 2016-04-28 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616576B1 (fr) * 1987-06-12 1992-09-18 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication

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