JP2007158317A5 - - Google Patents
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- Publication number
- JP2007158317A5 JP2007158317A5 JP2006303068A JP2006303068A JP2007158317A5 JP 2007158317 A5 JP2007158317 A5 JP 2007158317A5 JP 2006303068 A JP2006303068 A JP 2006303068A JP 2006303068 A JP2006303068 A JP 2006303068A JP 2007158317 A5 JP2007158317 A5 JP 2007158317A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- substrate
- semiconductor device
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 35
- 239000000758 substrate Substances 0.000 claims 10
- 150000002894 organic compounds Chemical class 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052797 bismuth Inorganic materials 0.000 claims 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 3
- 229910052791 calcium Inorganic materials 0.000 claims 3
- 239000011575 calcium Substances 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000012790 adhesive layer Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006303068A JP5063084B2 (ja) | 2005-11-09 | 2006-11-08 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005325448 | 2005-11-09 | ||
| JP2005325448 | 2005-11-09 | ||
| JP2006303068A JP5063084B2 (ja) | 2005-11-09 | 2006-11-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007158317A JP2007158317A (ja) | 2007-06-21 |
| JP2007158317A5 true JP2007158317A5 (enrdf_load_stackoverflow) | 2009-11-05 |
| JP5063084B2 JP5063084B2 (ja) | 2012-10-31 |
Family
ID=38242189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006303068A Expired - Fee Related JP5063084B2 (ja) | 2005-11-09 | 2006-11-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5063084B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009054219A1 (ja) * | 2007-10-25 | 2009-04-30 | Konica Minolta Holdings, Inc. | 電極の製造方法及びこれを用いる薄膜トランジスタの製造方法 |
| CN103022012B (zh) | 2011-09-21 | 2017-03-01 | 株式会社半导体能源研究所 | 半导体存储装置 |
| JP5843931B2 (ja) * | 2014-09-09 | 2016-01-13 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2016164223A (ja) * | 2015-03-06 | 2016-09-08 | 東ソー株式会社 | ポリアリーレンスルフィド系組成物 |
| KR102505880B1 (ko) * | 2017-09-06 | 2023-03-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법, 이를 포함하는 표시 장치 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4042182B2 (ja) * | 1997-07-03 | 2008-02-06 | セイコーエプソン株式会社 | Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法 |
| TW594947B (en) * | 2001-10-30 | 2004-06-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP2004241632A (ja) * | 2003-02-06 | 2004-08-26 | Seiko Epson Corp | 強誘電体メモリおよびその製造方法 |
| US6852586B1 (en) * | 2003-10-01 | 2005-02-08 | Advanced Micro Devices, Inc. | Self assembly of conducting polymer for formation of polymer memory cell |
| GB2423869B (en) * | 2003-11-28 | 2007-06-27 | Fuji Electric Holdings Co | Switching element |
| JP4963160B2 (ja) * | 2003-12-19 | 2012-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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2006
- 2006-11-08 JP JP2006303068A patent/JP5063084B2/ja not_active Expired - Fee Related