WO2009054219A1 - 電極の製造方法及びこれを用いる薄膜トランジスタの製造方法 - Google Patents

電極の製造方法及びこれを用いる薄膜トランジスタの製造方法 Download PDF

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Publication number
WO2009054219A1
WO2009054219A1 PCT/JP2008/067258 JP2008067258W WO2009054219A1 WO 2009054219 A1 WO2009054219 A1 WO 2009054219A1 JP 2008067258 W JP2008067258 W JP 2008067258W WO 2009054219 A1 WO2009054219 A1 WO 2009054219A1
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WO
WIPO (PCT)
Prior art keywords
manufacturing
thin film
film transistor
same
electrode
Prior art date
Application number
PCT/JP2008/067258
Other languages
English (en)
French (fr)
Inventor
Katsura Hirai
Makoto Honda
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Publication of WO2009054219A1 publication Critical patent/WO2009054219A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明は、樹脂基板への適用が可能な低温プロセスにより作製可能で、又基板への接着性に優れた塗布型の電極製造方法を提供することにある。またこれらを用いた薄膜トランジスタの製造方法を提供する。本発明の電極製造方法は、金属微粒子を含む薄膜を形成した後、該薄膜に対して酸化処理を行うことを特徴とする。
PCT/JP2008/067258 2007-10-25 2008-09-25 電極の製造方法及びこれを用いる薄膜トランジスタの製造方法 WO2009054219A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-277380 2007-10-25
JP2007277380 2007-10-25

Publications (1)

Publication Number Publication Date
WO2009054219A1 true WO2009054219A1 (ja) 2009-04-30

Family

ID=40579325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067258 WO2009054219A1 (ja) 2007-10-25 2008-09-25 電極の製造方法及びこれを用いる薄膜トランジスタの製造方法

Country Status (1)

Country Link
WO (1) WO2009054219A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011254003A (ja) * 2010-06-03 2011-12-15 Fujitsu Ltd 半導体装置及びその製造方法
WO2015198857A1 (ja) * 2014-06-24 2015-12-30 富士フイルム株式会社 金属酸化物膜の製造方法、金属酸化物膜、薄膜トランジスタ、及び電子デバイス

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158317A (ja) * 2005-11-09 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2007189130A (ja) * 2006-01-16 2007-07-26 Seiko Epson Corp デバイスとその製造方法、配線形成方法及び電気光学装置並びに電子機器
JP2007200659A (ja) * 2006-01-25 2007-08-09 Nippon Shokubai Co Ltd 金属被膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158317A (ja) * 2005-11-09 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2007189130A (ja) * 2006-01-16 2007-07-26 Seiko Epson Corp デバイスとその製造方法、配線形成方法及び電気光学装置並びに電子機器
JP2007200659A (ja) * 2006-01-25 2007-08-09 Nippon Shokubai Co Ltd 金属被膜の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011254003A (ja) * 2010-06-03 2011-12-15 Fujitsu Ltd 半導体装置及びその製造方法
WO2015198857A1 (ja) * 2014-06-24 2015-12-30 富士フイルム株式会社 金属酸化物膜の製造方法、金属酸化物膜、薄膜トランジスタ、及び電子デバイス
JPWO2015198857A1 (ja) * 2014-06-24 2017-06-01 富士フイルム株式会社 金属酸化物膜の製造方法、金属酸化物膜、薄膜トランジスタ、及び電子デバイス
KR101926955B1 (ko) * 2014-06-24 2018-12-07 후지필름 가부시키가이샤 금속 산화물막의 제조 방법, 금속 산화물막, 박막 트랜지스터, 및 전자 디바이스
TWI671820B (zh) * 2014-06-24 2019-09-11 日商富士軟片股份有限公司 金屬氧化物膜的製造方法、金屬氧化物膜、薄膜電晶體及電子元件

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