JP2007158224A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007158224A5 JP2007158224A5 JP2005354543A JP2005354543A JP2007158224A5 JP 2007158224 A5 JP2007158224 A5 JP 2007158224A5 JP 2005354543 A JP2005354543 A JP 2005354543A JP 2005354543 A JP2005354543 A JP 2005354543A JP 2007158224 A5 JP2007158224 A5 JP 2007158224A5
- Authority
- JP
- Japan
- Prior art keywords
- correction amount
- region
- exposure method
- slit
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims 8
- 238000005286 illumination Methods 0.000 claims 1
- 230000001360 synchronised effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005354543A JP2007158224A (ja) | 2005-12-08 | 2005-12-08 | 露光方法 |
| US11/567,499 US7619716B2 (en) | 2005-12-08 | 2006-12-06 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005354543A JP2007158224A (ja) | 2005-12-08 | 2005-12-08 | 露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007158224A JP2007158224A (ja) | 2007-06-21 |
| JP2007158224A5 true JP2007158224A5 (enExample) | 2009-01-29 |
Family
ID=38179832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005354543A Withdrawn JP2007158224A (ja) | 2005-12-08 | 2005-12-08 | 露光方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7619716B2 (enExample) |
| JP (1) | JP2007158224A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010182704A (ja) * | 2009-02-03 | 2010-08-19 | Nikon Corp | 補正ユニット、照明光学系、露光装置、およびデバイス製造方法 |
| JP5398318B2 (ja) * | 2009-03-24 | 2014-01-29 | 株式会社東芝 | 露光装置および電子デバイスの製造方法 |
| JP6422307B2 (ja) * | 2014-11-05 | 2018-11-14 | キヤノン株式会社 | 露光方法、露光装置、および物品の製造方法 |
| EP3570110A1 (en) * | 2018-05-16 | 2019-11-20 | ASML Netherlands B.V. | Estimating a parameter of a substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3232473B2 (ja) | 1996-01-10 | 2001-11-26 | キヤノン株式会社 | 投影露光装置及びそれを用いたデバイスの製造方法 |
| JP3937580B2 (ja) * | 1998-04-30 | 2007-06-27 | キヤノン株式会社 | 投影露光装置及びそれを用いたデバイスの製造方法 |
| KR20010085493A (ko) * | 2000-02-25 | 2001-09-07 | 시마무라 기로 | 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법 |
-
2005
- 2005-12-08 JP JP2005354543A patent/JP2007158224A/ja not_active Withdrawn
-
2006
- 2006-12-06 US US11/567,499 patent/US7619716B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200519526A (en) | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography | |
| TWI264058B (en) | Method of correcting mask pattern and method of forming the same | |
| WO2017036173A1 (zh) | 光学邻近效应修正方法和系统 | |
| TW200604763A (en) | Electron-beam plotting method, method of manufacturing lithographic mask, and electron-beam plotting device | |
| CN115480441B (zh) | 光学临近修正方法、掩膜版、可读存储介质及计算机设备 | |
| JP2005181523A5 (enExample) | ||
| TW200622509A (en) | A method for performing full-chip manufacturing reliability checking and correction | |
| JP2010122526A (ja) | マスクレス露光方法 | |
| CN101738850B (zh) | 光学临近修正参数采集方法 | |
| CN102043325A (zh) | 掩模图形校正方法以及掩模版制作方法 | |
| CN110187611A (zh) | 一种晶圆上曝光区域的排布方法 | |
| TW200506514A (en) | Method for manufacturing gray tone mask, and gray tone mask | |
| JP2015012258A5 (enExample) | ||
| CN102566312A (zh) | 无掩膜直写式光刻机系统中图形数据灰度值的计算方法 | |
| CN1577722A (zh) | 图形修正方法、系统和程序、掩模、半导体器件制造方法、设计图形 | |
| TW200606594A (en) | Method for preparing drawing pattern, method for forming resist pattern and method for controlling exposure apparatus | |
| JP3054765B2 (ja) | マスク製造のための近接効果補正方法 | |
| CN109130570B (zh) | 一种激光打标方法、电子设备及存储介质 | |
| CN103309148A (zh) | 光学临近效应修正方法 | |
| US7222327B2 (en) | Photo mask, method of manufacturing photo mask, and method of generating mask data | |
| TW200717185A (en) | Exposure method, exposure apparatus and device manufacturing method | |
| CN112433441A (zh) | Opc修正方法及opc修正装置 | |
| CN105116683A (zh) | 一种光学邻近效应修正离焦模型的校准方法 | |
| JP2008209663A (ja) | 光近接効果補正方法 | |
| US20140013286A1 (en) | Method for manufacturing a mask |