TW200717185A - Exposure method, exposure apparatus and device manufacturing method - Google Patents

Exposure method, exposure apparatus and device manufacturing method

Info

Publication number
TW200717185A
TW200717185A TW095124741A TW95124741A TW200717185A TW 200717185 A TW200717185 A TW 200717185A TW 095124741 A TW095124741 A TW 095124741A TW 95124741 A TW95124741 A TW 95124741A TW 200717185 A TW200717185 A TW 200717185A
Authority
TW
Taiwan
Prior art keywords
exposure
reticle
scanning
wafer
area
Prior art date
Application number
TW095124741A
Other languages
Chinese (zh)
Other versions
TWI422980B (en
Inventor
Ayako Sukegawa
Shinichi Nakajima
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200717185A publication Critical patent/TW200717185A/en
Application granted granted Critical
Publication of TWI422980B publication Critical patent/TWI422980B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

In scanning exposure, while performing synchronous scanning to a reticle and a wafer, under prescribed exposure conditions, to an illuminating area (IAR) whereupon illuminating light is applied and an exposure area, respectively, a pattern in a pattern area (PA) on the reticle is transferred on the wafer (W) through a projection optical system. At the time of correcting relative positions of the reticle and the wafer during the scanning exposure, nonparametric information relating to relative position shift quantities of the reticle and the wafer within an XY plane during the synchronous scanning, namely, a correction map including a relative position shift correcting quantity at each sample position in the scanning direction in the synchronous scanning, is used.
TW095124741A 2005-07-08 2006-07-07 Exposure method and exposure apparatus, and component manufacturing method TWI422980B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005200365 2005-07-08

Publications (2)

Publication Number Publication Date
TW200717185A true TW200717185A (en) 2007-05-01
TWI422980B TWI422980B (en) 2014-01-11

Family

ID=37637019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124741A TWI422980B (en) 2005-07-08 2006-07-07 Exposure method and exposure apparatus, and component manufacturing method

Country Status (3)

Country Link
JP (1) JP5045927B2 (en)
TW (1) TWI422980B (en)
WO (1) WO2007007626A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418954B (en) * 2007-06-15 2013-12-11 Asml Netherlands Bv Multivariable solver for optical proximity correction

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454860B (en) * 2012-08-17 2014-10-01 Univ Nat Taipei Technology Image alignment apparatus
CN111936934B (en) * 2018-03-29 2023-04-28 Asml荷兰有限公司 Control method for scanning exposure device
WO2021047833A1 (en) * 2019-09-10 2021-03-18 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228344A (en) * 1999-02-04 2000-08-15 Canon Inc Scanning projection aligner and device-manufacturing method
JP4905617B2 (en) * 2001-05-28 2012-03-28 株式会社ニコン Exposure method and device manufacturing method
KR20010109212A (en) * 2000-05-31 2001-12-08 시마무라 테루오 Estimating method, position detecting method, exposure method and method of manufacturing device, and exposure apparatus
JP2002222760A (en) * 2001-01-29 2002-08-09 Canon Inc Method and apparatus for exposure and method of manufacturing device
US7817242B2 (en) * 2003-11-28 2010-10-19 Nikon Corporation Exposure method and device manufacturing method, exposure apparatus, and program
JP2005166951A (en) * 2003-12-02 2005-06-23 Nikon Corp Exposure method, exposure apparatus, and lithography system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418954B (en) * 2007-06-15 2013-12-11 Asml Netherlands Bv Multivariable solver for optical proximity correction

Also Published As

Publication number Publication date
JPWO2007007626A1 (en) 2009-01-29
WO2007007626A1 (en) 2007-01-18
TWI422980B (en) 2014-01-11
JP5045927B2 (en) 2012-10-10

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