TWI422980B - Exposure method and exposure apparatus, and component manufacturing method - Google Patents

Description

Exposure method and exposure apparatus, and component manufacturing method

The present invention relates to an exposure method and an exposure apparatus, and a device manufacturing method, and more particularly to an exposure method, an exposure apparatus which is very suitable for implementing the exposure method, and a component manufacturing method using the exposure method, the exposure method, The pattern formed on the reticle is transferred onto the object while the reticle and the object are scanned synchronously with respect to the illumination light under predetermined exposure conditions.

In the lithography step for manufacturing a semiconductor element, a liquid crystal display element, or the like, a progressively moving type projection exposure apparatus (hereinafter simply referred to as an "exposure apparatus"), for example, a step-and-scan type scanning type projection exposure apparatus (so-called Scan stepper) and so on.

A scanning type exposure apparatus is used to hold a reticle stage of a mask or a reticle (hereinafter collectively referred to as a "reticle"), and a substrate for holding a wafer or a glass plate (hereinafter collectively referred to as "crystal The wafer stage of the circle is synchronously scanned for scanning exposure. Therefore, the synchronization accuracy of the two stages in the scanning exposure has a considerable influence on the transfer precision or the overlay precision of the pattern. For example, when the moving direction of the reticle stage or the wafer stage is deviated from the scanning direction in the synchronous scanning, or when the reticle stage and the wafer stage are deviated from the synchronized state, the transfer position of the pattern on the wafer It will deviate from the design position. When the pattern transfer position on such a wafer is deviated, it directly becomes a shape distortion of the irradiation region (so-called shot distortion) and is presented as an exposure result.

Therefore, various techniques for improving the synchronization accuracy of the wafer stage and the reticle stage in scanning exposure have been introduced in the past. For example, the relative positions of the two stages are corrected based on the actual exposure results at the time of scanning exposure.

The relative position correction of the two stages is performed using a correction function (exponential function or trigonometric function) which takes the position of the two stages in the scanning direction as an operational variable, and the relative positions of the two stages at the position. The amount of correction is used as an explanatory variable. The positional deviation of the relative positions of the two stages depends on the scanning speed of the two stages in the scanning exposure, or the length of the formed irradiation area in the scanning direction (scanning length), etc., depending on the degree of each stage. There are considerable differences, and the dynamic motion of the two stages will also change greatly. Therefore, in general, the correction function is based on the exposure conditions (including the scanning speed of the two stages, the scanning length, etc. Condition) as a parameterized parametric function.

The parameterized correction function is obtained by modeling the relationship between the operation variable, the explanatory variable, and the parameter into a polynomial of a predetermined number by means of regression analysis or the like, and includes a so-called modeling error. Therefore, when the correction function model does not coincide with the dynamic characteristics of the actual two stages, even if the correction function has been completely corrected in accordance with the correction function, the transfer result is not ideal. The dynamic characteristics of the two stages are quite complex, and as the required exposure accuracy becomes higher, the correction residual caused by the modeling error becomes more worrying.

The present invention has been made in view of the above-mentioned matters, and it is an exposure method from the first viewpoint that the photomask and the object are simultaneously scanned with respect to illumination light under predetermined exposure conditions, and are formed in the photomask. Transferring the pattern onto the object, comprising: a correcting step of correcting the non-parametric information related to the relative positional deviation of the reticle and the object in the two-dimensional plane in the synchronous scan The relative position of the reticle to the object in the synchronous scan.

In this way, since the relative position of the reticle and the object in the synchronous scanning is corrected according to the non-parameterized information related to the relative positional deviation of the reticle and the object in the two-dimensional plane in the synchronous scanning, the model does not need to be considered. Error. Thereby, since the correction residual of the relative position correction of the mask and the object can be reduced, both of them can be scanned synchronously with high precision, so that high-precision exposure can be realized.

According to a second aspect of the present invention, in an exposure apparatus, a pattern formed on a photomask is transferred onto an object, and the illumination system includes an illumination system that illuminates the mask with illumination light: a first moving body And maintaining the reticle in a first moving surface that traverses the illumination light path of the illumination system; and the second moving body is capable of holding the object moving in the first moving surface that traverses the illumination light path; The driving device drives the first moving body and the second moving body to synchronously scan the illuminating device and the object under the predetermined exposure conditions; and the control device is configured to perform the light according to the synchronous scanning The mask is related to the non-parametric information related to the relative positional deviation of the object in the two-dimensional plane to correct the relative position of the mask and the object in the synchronous scan.

Thereby, the control device corrects the reticle and the object in the synchronous scanning by controlling the driving device according to the non-parameterized information related to the relative positional deviation of the reticle and the object in the two-dimensional plane in the synchronous scanning. Relative position, so there is no need to consider modeling errors. Thereby, since the correction residual of the relative position correction of the mask and the object can be reduced, both of them can be scanned synchronously with high precision, so that high-precision exposure can be realized.

In the lithography step, the exposure method of the present invention is used to scan and expose an object to form a pattern on the object, whereby a pattern can be formed on the object with good precision. Therefore, the present invention can also be referred to as a component manufacturing method using the exposure method of the present invention from the third viewpoint.

Hereinafter, an embodiment of the present invention will be described with reference to Figs. 1 to 9 . Fig. 1 is a schematic block diagram showing an exposure apparatus 100 according to an embodiment of the present invention.

The exposure apparatus 100 is a step-and-scan type projection exposure apparatus. The exposure apparatus 100 includes an illumination system 10, a reticle stage RST on which the reticle R is loaded, a projection optical system PL, a wafer stage WST on which the wafer W is loaded, an alignment system AS, and an overall control device. Main control device 20 and the like.

In the illumination system 10, a predetermined area on the reticle R on which a circuit pattern or the like is drawn is illuminated by illumination light (exposure light) IL with substantially uniform illuminance. The area on the reticle R illuminated by the illumination light IL is referred to as the illumination area IAR. The illumination area IAR is an area of an elongated slit shape (or an arc shape) in the X-axis direction. Here, vacuum ultraviolet light such as far-ultraviolet light such as KrF excimer laser light (wavelength 248 nm) or ArF excimer laser light (wavelength 193 nm) or F ₂ laser light (wavelength 157 nm) is used as the illumination light IL. . The illumination light IL can also use a bright line (g line, i line, etc.) from the ultraviolet region of the ultrahigh pressure mercury lamp. The illumination system 10 is the same as the illumination system disclosed in, for example, Japanese Laid-Open Patent Publication No. 2001-313250, the entire disclosure of which is incorporated herein by reference. The contents of the above-mentioned U.S. Patent Application Publication No.

The reticle R is fixed to the aforementioned reticle stage RST by vacuum suction, for example. The reticle stage RST can be perpendicular to the optical axis of the illumination system 10 (the optical axis of the projection optical system PL to be described later) by a reticle stage driving unit (not shown) using a linear motor or the like as a driving source. AX is consistent in the XY plane (including the rotation around the Z axis) for micro-amplification, and can be driven in a predetermined direction at the set scanning speed (here, the Y-axis direction in the left and right direction in the paper plane in Fig. 1) ).

The moving mirror 15 having a reflecting surface for reflecting the laser light is provided on the reticle stage RST (actually, an X moving mirror and a Y moving mirror each having a reflecting surface orthogonal to the X-axis direction and the Y-axis direction) ). The position of the reticle stage RST in the moving surface of the stage (the X position, the Y position, and the θ z direction (the amount of rotation about the Z axis)) is irradiated by the laser light. The reticle laser interferometer (hereinafter referred to as "the reticle interferometer") 16 of the reflecting surface is measured at any time with a resolution of, for example, 0.5 to 1 nm. The position information (including rotation information such as the amount of deflection) from the reticle stage RST of the reticle interferometer 16 is supplied to the stage control device 19 and supplied thereto to the main control device 20. The stage control device 19 drives and controls the reticle stage RST through the reticle stage drive unit not shown, based on the instruction from the main control unit 20, based on the position information of the supplied reticle stage RST. To control the position of the reticle R held on the reticle stage RST. Further, instead of the moving mirror 15, the end surface of the reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to a reflecting surface of the moving mirror).

The projection optical system PL is disposed below the reticle stage RST in FIG. 1, and its optical axis AX is oriented in the Z-axis direction. As the projection optical system PL, for example, a refractive optical system which is telecentric on both sides and has a predetermined reduction ratio β (for example, 1/5 or 1/4) is used. Therefore, when the illumination area IAR is illuminated by the illumination light IL from the illumination system 10, that is, by illumination by the reticle R (the pattern surface is substantially aligned with the first surface (object surface) of the projection optical system PL) The light IL is reduced in the circuit pattern of the reticle R in the illumination area IAR by the projection optical system PL (the portion of the circuit pattern is reduced in size), and is formed on the surface of the second surface (image surface) on the surface. A region (exposure region) on the wafer W coated with a photoresist (photosensitive agent) that is conjugate with the illumination region IAR. Then, by the synchronous driving of the reticle stage RST and the wafer stage WST, the reticle R is relatively moved in the scanning direction (Y-axis direction) with respect to the illumination area IAR (illumination light IL), and the wafer W is made. Relatively moving the scanning area (illumination light IL) in the scanning direction (Y-axis direction), thereby performing scanning exposure of one irradiation area (division area) on the wafer W to transfer the pattern of the reticle R to The illuminated area. That is, in the present embodiment, the pattern is formed on the wafer W by the illumination system 10, the reticle R, and the projection optical system PL, and the sensing layer (the photoresist layer) on the wafer W is irradiated with the illumination light IL. The exposure is performed to form the pattern on the wafer W.

The wafer stage WST is disposed on a base (not shown) below the projection optical system PL of FIG. A wafer holder 25 is mounted on the wafer stage WST. The wafer W is fixed to the wafer holder 25 by, for example, vacuum suction.

The wafer stage WST can be driven by X, Y, Z, θ z (rotation direction around the Z axis), θ x (rotation direction around the X axis), and θ by the wafer stage driving unit 24 of FIG. 1 . A single stage in the six degrees of freedom direction of y (the direction of rotation about the Y axis).

The wafer stage WST is provided with a moving mirror 17 having a reflecting surface for reflecting the laser light (actually, an X moving mirror and a Y moving mirror each having a reflecting surface orthogonal to the X-axis direction and the Y-axis direction). At least 5 degrees of freedom of the wafer stage WST (X position, Y position, rotation (biasing (θ z rotation around Z axis rotation), pitch (θ x rotation around X axis rotation), and roll (rotation of θ y around the Y-axis)) is a wafer laser interferometer (hereinafter referred to as a "wafer interferometer") 18 that is disposed outside the reflective surface by irradiating the laser light, for example, at 0.5 The decomposition capability up to 1 nm is detected at any time. The stage control device 19 drives and controls the wafer stage WST through the wafer stage drive unit 24 in accordance with the position information of the wafer stage WST, depending on the instruction from the main control unit 20. The position of the wafer W held on the wafer stage WST. Alternatively, instead of the moving mirror 17, the end surface of the wafer stage WST may be mirror-finished to form a reflecting surface (corresponding to a reflecting surface of the moving mirror). The contents of the above-mentioned U.S. Patent Application Publication No.

Further, a reference mark plate (not shown) is fixed in the vicinity of the wafer W on the wafer stage WST. The surface of the reference mark plate (not shown) is set to be substantially the same height as the surface of the wafer W, and at least a pair of reticle alignment reference marks and a baseline measurement reference for the alignment system AS are formed on the surface. Mark and so on.

The aforementioned alignment system AS is an off-axis alignment sensor disposed on the side of the projection optical system PL. As such an alignment system AS, for example, a sensor of an FIA (Field Image Alignment) system of an image processing method can be used, which will irradiate a wide-frequency detection beam that is not photosensitive on the wafer to the object mark, and use the photographing An element (such as a CCD) captures an image of a target image formed on the light receiving surface by a reflected light from the target mark, and an indicator (an indicator pattern provided on an index board in the alignment system AS) (not shown), and outputs the image Wait for the image signal. The photographic result of the alignment system AS is output to the main control unit 20.

In Fig. 1, the control system is mainly composed of a main control device 20, a stage control device 19 located below, and the like.

The main control device 20 includes a so-called microcomputer (or workstation) composed of a CPU (Central Processing Unit), a main memory, and the like for coordinating the entire control device. The CPU is a multiplexed CPU, and the worker operating on the CPU is useful for performing the following description in addition to a real time clock task that is periodically started or an exposure action worker for controlling a series of exposure actions. A correction processing worker or the like for correcting the target position command of the line stage RST. The exposure operation worker, for example, issues an instruction to the stage control device 19 to start exposure, etc., and sends information necessary for the exposure operation to the stage control device 19, thereby appropriately performing a series of exposure operations. Moreover, the exposure action worker can start other workers (such as the above-mentioned correction processing worker, etc.) according to actual needs.

In the stage control device 19, a position-speed feedback control system (as a feedback control system) for controlling the position and speed of the reticle stage RST, and a position for controlling the position and speed of the wafer stage WST are constructed. Speed feedback control system (as a feedback control system). The position-speed feedback control system of the two stages in the stage control device 19 is sent based on the position command group (track command) per unit time sent from the main control unit 20, and the interferometers 16 and 18. The deviation of the position information is calculated, and the driving amount of the reticle stage RST and the wafer stage WST is calculated. The stage control device 19 transmits the reticle stage driving unit and the wafer stage driving unit 24 based on the calculated driving amount, for example, controlling the scanning of the reticle R and the wafer W in the scanning exposure or the wafer. W's movement (stepping) and so on.

Further, the exposure apparatus 100 of the present embodiment includes a multi-focus detection system of an oblique incidence system including an illumination system not shown and a light receiving system (not shown), and the illumination system is inclined from the optical axis AX. A light beam for forming a plurality of slit images is supplied to an optimum imaging surface of the projection optical system PL, and the light receiving system receives the reflected light beams of the light beam on the surface of the wafer W through the respective slits. The multifocal detection system is configured to be the same as that disclosed in Japanese Laid-Open Patent Publication No. Hei. 6-283403 (and the corresponding Japanese Patent No. 5,448,332, etc.), and the output of the multi-focus detection system is supplied to the main Control device 20. The disclosures in the above-mentioned bulletin and the corresponding US patent specification are hereby incorporated by reference in their entire extent to the extent of the disclosure of the disclosure of the specification of

The stage control device 19 drives the wafer stage WST to the Z through the stage control device 19 and the wafer stage drive unit 24 based on the wafer position information from the multi-focus detection system by an instruction from the main control unit 20. Direction and direction of inclination.

Correction Chart

The exposure apparatus 100 of the present embodiment is configured to correct a relative position of the wafer stage WST and the reticle stage RST during scanning exposure before a series of exposure steps. 2 is a schematic diagram showing the synchronous scanning of the wafer stage WST and the reticle stage RST by scanning exposure, so that the pattern area PA held on the reticle R of the reticle stage RST passes through the illumination area. The status of the IAR.

Here, as shown in FIG. 2, a y-axis parallel to the Y-axis is set. The origin of the y-axis is the position (exposure start position) at the start of exposure of the reticle stage RST in the scanning exposure. y = y ₁ , y ₂ , ..., y _k , y _{d _ n u m} shown in Fig. 2 is the sampling position in the correction map. These sampling positions are equally spaced with the exposure start position as the origin, and the interval is, for example, 1 mm.

Fig. 2 shows the correction amounts in the X-axis direction, the Y-axis direction, and the θ z direction at the respective sampling positions. Reticle stage RST target position, when the line y = ₁ y X-axis, Y-axis direction, the direction of the correction amount is set to θ z _{dx 1, dy 1, d θ} 1. Similarly, when y=y ₂ , the correction amounts in the X-axis direction, the Y-axis direction, and the θ z direction are dx ₂ , dy ₂ , and d θ ₂ , and the y=y _k is the X-axis direction and Y. The correction amounts in the axial direction and the θ z direction are dx _k , dy _k , and d θ _k , and the correction amounts in the X-axis direction, the Y-axis direction, and the θ z direction are set to dx when y=y _{d _ n u m d _ n u m} , dy _{d _ n u m} , d θ _{d _ n u m} . In each of the sampling positions, the position correction amount of the reticle stage RST in the X-axis direction, the Y-axis direction, and the θ z direction, and the vector map of the correction amount corresponding to each sampling position is a correction map. (map).

Dynamic and Static Maps

Further, the deviation (relative positional deviation) of the relative positions of the two stages WST and RST generated during the scanning exposure can be classified into those formed by the static characteristics of the two stages WST and RST and those formed by the dynamic characteristics.

As a representative example of the static characteristics of the relative positional deviation of the two stages WST and RST, for example, the uneven shape (the degree of bending of the moving mirror) of the surface of the moving mirror provided in the two stages WST and RST is exemplified. The measuring points of the interferometers 16, 18 are actually the faces of the moving mirrors. Therefore, the measured values of the interferometers 16 and 18 are measured on the plane of the moving mirror, and the relationship between the arrival position of the laser beam and the position of the stage in the moving mirror is determined to be constant. The position of the stage WST and RST. Therefore, when the surface of the moving mirror has a slight curvature, the actual deviation of the relative positions of the two stages WST and RST is caused by the bending.

Further, a representative example of the positional deviation caused by the dynamic characteristics of the two stages WST and RST is, for example, a follow-up delay of the reticle stage RST to the target position. In the synchronous scanning of the two stages WST and RST, although one stage follows the other stage, the relative position of the two stages WST and RST is deviated due to the tracking error of the control system or the like.

The relative positional deviation caused by the static characteristics of the two stages WST and RST and the relative positional deviation caused by the dynamic characteristics are not the same. For example, the relative positional deviation caused by the static characteristics of the two stages WST and RST depends only on the position coordinates of the two stages WST and RST, but the relative positional deviation caused by the dynamic characteristics of the two stages WST and RST. It depends not only on the position coordinates of the two stages WST and RST, but also on the speed of the two stages RST, WST (ie, the scanning speed) in the synchronous scanning, or the length of the irradiation area in the Y-axis direction (ie, the irradiation size). ) The exposure conditions are subject to change depending on the exposure conditions. Therefore, the preferred method is to deal with both of them separately, and this embodiment is processed in this manner.

Specifically, in the present embodiment, the correction map for correcting the relative positions of the two stages WST and RST is divided into a correction map R _S related to the static characteristics of the two stages WST and RST, and related to the dynamic characteristics. The correction map R _{D is} prepared, and the correction maps R _S and R _D are prepared separately. Further, in the actual scanning exposure, using the following equation is obtained based correction map R _S and R _D of FIG correction and R _C, as an actual correction amount, a correction amount re-order side of both stages WST and correction The relative position of the RST is scanned and exposed. In addition, in the following, the correction map R _{S is} referred to as a static map, and the correction map R _{D is} referred to as a dynamic map.

[Formula 1] R _C (y)=R _D (y)+R _S (y')...(1)

Here, y, which is an operation variable of the dynamic map, is the moving distance of the reticle stage RST from the start of exposure as described above. The y is the coordinate axis in the irradiation region parallel to the Y-axis with the exposure start position as the origin. Further, y' which is an operation variable of the still picture is the Y position of the reticle stage RST. Although the correction map R _C (y) is in the above (1), the operation variable may also be y'. That is, the calculation of the above formula (1) can be performed after converting any one of the correction maps R _D (y) and R _S (y') into either y or y'.

Further, in the above formula (1), the correction map R _C is represented by a function form (the position y, y' is used as an operation variable, and the correction amount of the stage position at the position y, y' is used as a explanatory variable). (y), R _D (y), R _S (y'), but in fact, as described later, it is a non-parametric information (ie, a map) that does not contain parameters.

The dynamic map R _D (y), as described above, varies depending on exposure conditions such as the irradiation size. Therefore, in order to control the relative positions of the two stages WST and RST with good precision, the dynamic map R _D (y) suitable for the exposure conditions set by the exposure apparatus is used to correct the relative positions of the two stages WST and RST.

There are a large number of exposure conditions that affect the dynamic graph R _D (y), which can be classified into those that can only obtain discrete set states and those that can obtain continuous values.

Only the exposure conditions of the discrete setting state are present, for example, the scanning direction, the step (X step) direction in the X-axis direction before the scanning exposure starts, and the control phase of the wafer stage WST (to specify the stage before and after the synchronous scanning) The actor, for example, starts the synchronous scanning after the stepping in the X direction is completely completed, and the control program of the stage is differentiated according to the program). Generally, there are two kinds of scanning directions: +Y direction and -Y direction, and the step direction also has two kinds of +X and -X directions, and the control phase generally includes several kinds. In these exposure conditions, the total number of combinations of the set states is limited, and the dynamic map R _D can be previously prepared for each combination (for example, the scanning direction +Y, the step direction +X, and the combination of one control phase). y).

Among the exposure conditions in which continuous values can be obtained, for example, the scanning speed (SCAN speed), the step pitch, and the scanning size of the two stages WST and RST are available. These exposure conditions allow various continuous values to be obtained depending on the design information of the wafer W (i.e., the exposure target). In view of this, it is extremely difficult to prepare a dynamic map R _D (y) suitable for all combinations of setting values of the settable exposure conditions in advance.

Therefore, in the present embodiment, regarding the exposure conditions in which continuous values can be obtained, the motion map R _D (y) is prepared in advance only for a plurality of representative examples of the setting states of the exposure conditions. Further, when the dynamic map R _D (y) corresponding to the exposure condition setting value actually set in the exposure apparatus 100 is not prepared, the interpolation is performed by using the interpolation of the dynamic map R _D (y) prepared in advance. The dynamic map R _D (y) corresponding to the set value is used, and the relative position correction of the two stages WST and RST is performed using the created dynamic map R _D (y).

According to the above, when the correction map is applied, it is preferable to classify a plurality of different exposure conditions into exposure conditions in which only the discrete setting state can be obtained, and exposure conditions in which continuous values can be obtained. In this classification, the variable indicating the setting state of the exposure condition in which only the discrete setting state can be obtained is defined as a non-interpolation variable, and the variable indicating the setting state (set value) of the exposure condition in which the continuous value can be obtained is defined. For interpolation variables.

Non-interpolated variables are variables that are not considered as interpolated objects. Only the exposure conditions of the discrete setting state can be prepared as long as a dynamic map can be prepared for each combination of the setting states. Further, the non-interpolation variable corresponding to the exposure condition in which only the discrete setting state can be obtained sets the value in which each setting state is quantized.

Further, the interpolation variable refers to a variable that is an interpolation target. For the exposure conditions classified into the interpolation variables, several representative values are extracted within the range of continuous values that can be obtained, and the dynamic graph R _D (y) corresponding to each combination of the representative values of the captured values is prepared in advance, and These map groups are stored as a parent map. Moreover, before the scanning exposure, the main control device 20 extracts a plurality of dynamic images R _D (y) which are close to the actual set values of the exposure conditions from the dynamic image R _D (y) stored as the parent, and then Using the interpolation of the extracted dynamic map R _D (y), a dynamic map R _D (y) corresponding to the actual set value of the exposure conditions in the exposure apparatus 100 is created. Further, at the time of scanning exposure, the main control unit 20 performs correction of the relative positions of the two stages WST and RST in the synchronous scanning using the created motion map R _D (y).

Here, the vector in which the interpolation variable is used as each element is defined as the interpolation variable vector φ, and the vector in which the non-interpolation variable is used as each element is defined as the non-interpolation variable vector Φ. These vectors are represented by the following equations, respectively.

In the above formula (2), the number of elements of the interpolation variable vector φ, that is, the number of interpolation variables, is all m. Among the interpolation variables φ ₁ to φ _m , φ _{s c a n _ v e l o c i t y} indicating the scanning speed, and φ _{s c a n _ l e n g t h} indicating the scanning length Wait. Here, the number of elements of the non-interpolation variable vector Φ, that is, the number of non-interpolation variables, is all n. Interpolation variables [Phi] _non-1 Φ _n includes information indicating a scanning direction of _{Φ s c a n _ d e} r e c t i o n, indicating the wafer Φ _{w s} control phase stage WST of _{t a g e _ p h a s e} and so on.

When the non-interpolated variable [Phi] ~ [Phi] _n-set number may be _{acquired. 1} of the states are set to M ₁ ~ M _n, the total number of combinations thereof represented by the following formula.

For example, the non-interpolation variable is only set to the scanning direction Φ _{s c a n _ d e r e c t i o n} and the control phase Φ _{w s t a g e _ p h a s e of the} wafer stage WST . The scanning direction Φ _{s c a n _ d e r e c t i o n} is set in the +Y direction and the -Y direction. Further, when the number of setting states of the control stage Φ _{w s t a g e _ p h a s e} of the wafer stage WST is four, M _{A L L} is 2 × 4 = 8.

The representative values selected for the interpolation variables φ ₁ to φ _m are preferably selected substantially equally within a range in which the value of the interpolation variable can be obtained. In addition, from the viewpoint of reliability, it is preferable that the interpolation (interpolation) interpolation method is performed by the extrapolation (external division) method. Therefore, it is preferable to obtain The value of the range boundary of the value of the interpolation variable is selected as the representative value. Further, it is preferable to determine the number of representative values in consideration of the computing power of the main control device 20 or the like (i.e., the computing power for performing the interpolation processing described later). From these points of view, for example, 140, 280, 560 mm/s or the like can be selected as a representative value of the scanning speed, and 33, 25, 17 mm or the like is selected as a representative value of the scanning length. When a plurality of representative values respectively selected as interpolation variables φ ₁ to φ _m are respectively set to N ₁ to N _m , then N ₁ to N _m can be summarized as follows.

At this time, the combination number N _{A L L} of the representative values of the interpolation variables is expressed by the following equation.

Therefore, in the present embodiment, the number of dynamic maps R _D (y) to be prepared in advance is N _{A L L} for each of the non-interpolation variables Φ ₁ to Φ _n .

As a result, the total number of all combinations of the set values of the non-interpolation variables and the representative values of the interpolation variables is M _{A L L} × N _{A L L} . In the following, for simplicity of explanation, the total number M _{A L L} × N _{A L L is} rounded up to M. That is, there are M groups in all combinations of the set values of the non-interpolation variables and the representative values of the interpolation variables. When j is a variable that can take values from 1 to M, the interpolation variable vector φ and the non-interpolation variable vector Φ in the combination of the set value of the non-interpolation variable and the representative value of the interpolation variable can be φ _j , Φ _j (j = 1 ~ M) way to represent. Also, when i ≠ j, it is φ _i ≠ φ _j or Φ _i ≠ Φ _j . As long as such a representation is used, in the present embodiment, a combination of the interpolation variables of the M groups and the non-interpolation variables, that is, the correction maps of (φ ₁ , Φ ₁ ) to (φ _M , Φ _M ) can be obtained in advance. R _D (y). As described above, since the dynamic map R _D (y) depends on the above-described exposure conditions, that is, depending on the interpolation variable φ _j indicating the set state thereof, and the non-interpolation variable Φ _j , the dynamic graph can be expressed as R _D (y; φ _j , Φ _j ).

Further, as described above, the map correction amount of the map stage in the X-axis, the Y-axis, and the θ z-axis direction of each sampling position is corrected. Therefore, actually, the dynamic map R _D (y; φ _j , Φ _j) as shown in the following formula, based X-axis direction to correct the amount of _{R X D (y; φ j} , Φ j), the Y-axis direction correction amount _{R Y D (y; φ j} , Φ j), and The correction amount R _{Z D} (y; φ _j , Φ _j ) in the θ z direction is a vector of constituent elements.

Here, the correction amount R _{X D} (y; φ _j , Φ _j ) in the X-axis direction, the correction amount R _{Y D} (y; φ _j , Φ _j ) in the Y-axis direction, and the correction amount R _{Z in the} θ z direction. _D (y; φ _j , Φ _j ), which are respectively described by the following formula.

That is, according to the correction map, the position coordinate of the reticle stage RST with the exposure start position as the origin is at the sampling position y _k (k=1, 2, 3, ..., d_num), the reticle stage RST The correction amount of the target position is (dx _k , dy _k , d θ _k ). Furthermore, d_num is the number of samples.

Next, a method of creating a correction map will be described. Fig. 3 is a flow chart showing the processing formula of the main control unit 20 when the correction map is created. As shown in FIG. 3, first, in step 201, the measurement reticle for preparing the correction map is mounted on the reticle stage RST instead of the reticle R, and so-called low-speed super-high-speed overlap exposure is performed. This low speed-high speed overlap exposure will be described later.

Fig. 4(A) shows an example of the pattern area PA of the measurement reticle. As shown in FIG. 4(A), a plurality of two-dimensional position detecting marks Mk are arranged in a matrix in the pattern area PA. These markers Mk are arranged at least three at the same Y (y) position. 4(A) shows the x-axis which is parallel to the X-axis and has the center of the mark Mk located at the center among the three marks Mk arranged in the X-axis direction as the origin. The arrangement interval of the mark Mk in the Y (y) axis direction is about 2 times the sampling position interval of FIG. 2 (for example, 1 mm with respect to the sampling interval, here 2 mm), but the practice is not limited thereto. Further, although the mark Mk in FIG. 4(A) is shown as a square mark, it is not limited thereto, and the cross type mark may be used, or may be arranged in an equally spaced line in the X-axis direction (lined space; L/ S) A combination mark of the pattern and the L/S pattern arranged side by side in the Y-axis direction. The point is that the mark Mk can be detected as long as it can detect the shape of the two-dimensional position coordinate.

In step S201, the pattern of the measurement reticle (the pattern area PA is used) at a lower scanning speed (low speed) in which the dynamic characteristics of the two stages WST and RST do not affect the positional deviation of the transfer position of the mark Mk. Each of the marks Mk) is transferred onto the wafer W, and thereafter, the value of the interpolation variable φ _j (j=1 to M) and the non-interpolation variable Φ j (which are set as exposure conditions in the exposure apparatus 100) are set. In the state of the value of j=1 to M), the scanning exposure is again performed at the scanning speed (high speed) specified by the exposure condition so as to be superimposed on the image of each of the transferred marks Mk. Further, in the above-described low-speed exposure conditions, the scanning speed is set to 30 mm/s, the scanning length is the largest, and the control phase is the control phase set to start scanning from the stopped state of the stage WST.

In addition, at the actual low speed-high speed overlap, the position of the wafer W is slightly deviated in the XY plane (that is, it has a certain amount of offset) at the time of low speed transfer and high speed transfer, The image of the mark Mk of the low-speed transfer is prevented from overlapping the image of the mark Mk of the high-speed transfer. However, in the present embodiment, for the sake of simplicity of explanation, the transfer to the same position in the wafer W is described. Moreover, in the preferred method herein, it is preferable to measure the measurement error, preferably in the same exposure condition (that is, the element of the interpolation variable vector φ (interpolation variable) φ _j and the element of the non-interpolation variable vector Φ (Non-interpolation variable) Φ _j is the same value under the condition of a plurality of low-speed high-speed overlap exposure. Further, the aforementioned low speed-high speed overlap exposure is performed for a plurality of exposure conditions. Further, the wafer W which has been subjected to this low-speed/high-speed overlap exposure is developed by a developing device (not shown).

Fig. 4(B) shows an example of a positional deviation of an image transferred at a low speed scanning exposure and an image transferred at a high speed scanning exposure, corresponding to three marks Mk positioned at the same y position. In Fig. 4(B), the transfer image of the mark Mk at the same y position at the low speed transfer is indicated by a broken line, and the transfer image of the same mark Mk transferred at a high speed is indicated by a solid line. In Fig. 4(B), it is emphasized that the image transfer position of the mark Mk which is transferred at a low speed due to the dynamic characteristics of the two stages WST and RST is deviated from the image transfer position of the mark Mk which is transferred at a high speed. situation.

Returning to Fig. 3, in the next step 203, the positional deviation of all the transfer images of the mark Mk at the low speed and the high speed is measured by a predetermined measuring device (for example, the alignment system AS).

Next, in the sub routine 205, the correction in the X-axis direction of the sampling position y _k (k=1 to d_num) is obtained based on the positional deviation amounts of the three marker images at the same y position. The quantities dx ₁ to dx _{d _ n u m} , the correction amounts dy ₁ to dy _{d _ n u m in the} Y-axis direction, and the correction amounts d θ ₁ to θ _{d _ n u m in the} θ z directions.

In the following routine 205, first, as shown in FIG. 5, in step 301, the same exposure condition (the condition that the interpolation variable φ _j and the non-interpolation variable Φ _{j have} the same value) is performed as described above. The measurement results obtained by a plurality of low-speed-high-speed overlaps are grouped into groups of measurement results of the same exposure conditions. Next, in step 303, for the measurement result of the same group, the absolute value of the position deviation amount has exceeded the preset threshold, and it is excluded from the measurement result as a useless value. Next, in step 305, the average vector of the positional deviation vector of the same mark (the same scale: vernier) contained in the remaining measurement result is calculated.

Next, in step 307, based on the positional deviation amount corresponding to the three marks at the same Y position, the line Y=ax+b shown in Fig. 4(B) is obtained by, for example, the least square method (as a low speed and The slope a and the intercept b of the vector of the positional deviation between the high speeds. Further, in step 309, based on the obtained straight line, the positional deviation amount MX(Y _i ) and the y-axis in the x-axis direction of the coordinate Y _i in the irradiation region with the shot center as the origin are calculated. The positional deviation amount MY(Y _i ) of the direction and the positional deviation amount M θ(Y _i ) in the θ z direction. Here, the average value of the positional deviation amount in the X-axis direction corresponding to the three marks Mk is obtained as MX(Y _i ), and the linear intercept b is used as the positional deviation amount MY(Y _i ) in the y-axis direction. Find tan ^{- 1} (a) as the positional deviation amount M θ(Y _i ) in the θ z direction.

Next, in step 311, the operation variables of the correction amounts are converted from the Y position Y _i of the coordinates in the illumination area with the illumination center as the origin to the coordinates y _k of the illumination area with the exposure start position as the origin. .

In the next step 313, the correction amount MX(y _k ) in the x-axis direction, the correction amount MY(y _k ) in the y-axis direction, and the correction amount M θ(y _k ) in the θ z direction are used. The inverse filter is used to deconvolute the product. The transfer image of the mark Mk transferred onto the wafer W is a result of the folding of the image of the mark Mk projected on the wafer W between the illumination area IAR by the mark Mk on the measurement reticle. Therefore, in order to obtain the correction amount of a sampling position of the reticle stage RST with good precision, it is preferable to decompose the measurement result of the position deviation amount to restore the two stages WST and RST at each sampling position. The amount of positional deviation of the relative position.

Next, the inverse filter used will be described. First, when the sampling interval of the correction map is p _s [mm], then kp _s = y _k , the measurement result obtained in the above step 311 can be expressed by the following equation.

[Equation 9] R(kp _s ), k=1, 2, ... (9)

On the other hand, the moving average filter corresponding to the sampling interval p _s [mm] and the slit width w [mm] of the illumination area IAR is a sinc function S ₀ (χ) shown in the following formula in the frequency space (χ). ). This filter is a filter that helps to mark the fold of the transfer result of the Mk image.

If it is normalized at the sampling frequency ω _s , the following equation can be obtained.

among them, . Department indicates no more than The largest integer. The inverse filter size of the above-described filter that contributes to the convolution is set to 2 α+1 (α is an integer) in units of sampling intervals. When the inverse of the above formula (11) is subjected to inverse Fourier transform, the inverse filter can be obtained by the following equation.

Where m=-α, -α+1, -α+2,...,0,...,α-2,α-1,α

Further, if the Hanning window function W(mp _s ) is used as a window function in order to smooth both ends of the inverse filter, the inverse filter S _{i n v 1} (mp _s ) can be obtained. Haney window function W (mp _s) and the inverse filter S _{i n,} the following formula _{v 1} (mp _s).

Therefore, returning to Fig. 5, in step 313, the measurement result R(kp _s ) obtained in the above step 311 is decomposed by using the inverse filter shown in the above formula 13 as shown in the following equation.

Here, R _d (kps) is the measurement result after deconvolution.

In the next step 315, the measurement result obtained in the foregoing step 313 is subjected to a low-pass filter (the frequency near the frequency can be traced as the cutoff frequency), so that the y-position y _k of the coordinates in the illumination region is The correction amount MX(y _k ) in the x-axis direction, the correction amount MY(y _k ) in the y-axis direction, and the correction amount M θ(y _k ) in the θ z direction are corrected only by the correction of the reticle stage RST. Components below the frequency. As such a low-pass filter, for example, a moving average filter or a general low-pass filter such as a sinc function can be applied.

Next, in step 317, the correction amount MX(y _k ) in the x-axis direction, the correction amount MY(y _k ) in the y-axis direction, and θ z of each y position y _k after the low-pass filter is applied are used. The direction correction amount M θ(y _k ) is used to perform an interpolation operation to obtain the correction amount dx _{k in} the x-axis direction and the y-axis direction at the sampling positions y ₁ , y ₂ ... y _d _ _{n u m} The correction amount dy _k and the correction amount d θ _{k in the} θ z direction. As the interpolation method, various methods such as interpolation by a function of a predetermined number of times or interpolation using a sinc function can be applied. After the end of step 317, the processing of the subroutine 205 is ended.

Referring back to FIG. 3, in the next step 211, the reference wafer in which the pattern shown in FIG. 4(A) has been ideally transferred (the state in which the positional deviation amount is regarded as 0) is loaded instead of the wafer W. On the wafer stage WST, the overlap exposure is performed at the scanning speed under the low speed condition and the longest scanning length to overlap the ideal pattern image. In the next step 213, the lower layer mark Mk is measured. The amount of positional deviation from the image of the mark Mk of the overlap transfer. In the next step 215, a static map R _s (y') is created based on the amount of positional deviation measured in the aforementioned step 213. This method is roughly the same as the method of creating the dynamic image R _D (y) in the sub-normal 205.

The next step 217 is to store the dynamic graph R _D (y; φ ₁ , Φ ₁ ) of the (φ ₁ , Φ ₁ ) to (φ _M , Φ ₁ ) (that is, each combination of exposure conditions). R _D (y; φ _M , Φ _M ), and the static graph R _S (y'). A group of stored dynamic graphs R _D (y; φ _j , Φ _j ) are associated with interpolated variables and non-interpolated variables (φ ₁ , Φ ₁ )~(φ _M , Φ _M ). In the library, as a mother figure.

<Exposure action>

After the completion of the creation of the correction map, a series of exposure operations are started by the exposure apparatus 100. The exposure action will be described below. As described above, this exposure operation is carried out by the control of the exposure operation worker of the main control unit 20. In the exposure operation device, first, a process including design information such as a circuit pattern on the wafer W (which is an exposure target) is obtained from a host device (a main computer for managing an operation program of the exposure device 100). The data file is used for preparation processing required for exposure, such as loading of the reticle R, loading of the wafer W, various alignment operations, and setting of exposure conditions. After the completion of the preparation process, the irradiation area map (the irradiation area arrangement) required to drive the two stages WST and RST, the exposure order of the irradiation area, the irradiation area size, and the reading information included in the exposure method are read out. Based on the information read, the target stage command group of the two stages WST and RST (that is, the target track of the two stages WST and RST) is created based on the read information. Next, the main control device 20 issues an instruction to start the exposure to the stage control device 19, and transmits the file data of the target position command of the two stages WST and RST (to scan and expose the irradiation area of the next exposure target) to Stage control device 19.

The stage control device 19 inputs the target position command to each of the feedback control systems of the two stages WST and RST based on the file data of the target position command of the two stages WST and RST received, thereby performing two stages. The position control of WST and RST is performed for synchronous scanning of two stages WST and RST. At the same time, at the same time, the illumination of the illumination light IL of the illumination system 10 is started (the movable reticle blind is synchronized with the two stages WST, RST) to perform scanning exposure to transfer the pattern on the reticle R to Wafer W.

Further, the exposure operation worker activates the aforementioned correction processing worker each time the exposure operation is started. Fig. 6 is a flow chart showing the processing formula of the correction processing worker of the main control unit 20.

As shown in FIG. 6, first, the correction processing worker performs step 401 → 403 → 405 → 407 → before the instruction to start the exposure of the stage control device 19 from the main control device 20 in the exposure operation worker. Processing of 409. First, in step 40, the set value of the exposure condition set as the interpolation variable and the non-interpolation variable is obtained from the design information included in the exposure method, and then the correction condition, that is, the interpolation variable vector is set in step 403. φ ^* , non-interpolation variable vector Φ ^* . Next, in step 405, an exposure amount is obtained, which is an exposure amount when scanning the exposure of the set initial irradiation region in the exposure operation worker. The scanning speed is determined based on the amount of exposure.

In the next step 407, based on the set interpolation variable vector φ ^* and the non-interpolation variable vector Φ ^* , the dynamic image R _D (y; φ ^* , Φ ^* ) is extracted from the mother image to create the set.

Here, when there is a dynamic map R _D (y) that is suitable for the exposure condition (corresponding to the above-described correction condition) that is completely suitable for this determination, only the dynamic image R _D (y) is extracted, and It is sufficient to correct the relative position of the two stages WST and RST described later. Conversely, when there is no dynamic map R _D (y) suitable for the exposure condition, a plurality of dynamic graphs R _D (y) for the periphery of the interpolation are selected from the mother map to A set of the dynamic graph R _D (y) is created.

The interpolation variable vector φ ^* and the non-interpolation variable vector Φ ^* set in the above step 403 are expressed by the following equations.

As shown above, the interpolation variable vector φ ^* is a vector of m dimensions. In order to create the dynamic graph R _D (φ ^* , Φ ^* ) of the interpolation variable vector φ ^* by interpolation, two interpolation variable vectors are selected according to the respective axes, and the two interpolation variable vectors are variables within the shaft interpolation vector φ ^* of the m-dimensional space (i.e., vector space) (corresponding to the respective elements of the vector axis) sandwich the interpolated variable φ ^* vector positional relationship. Therefore, the interpolated variable vector selected here, that is, the number of dynamic maps selected from the parent map is 2 ^m .

Here, each of the selected dynamic pictures is assigned a number of 1~2 ^m . When the interpolation variable vector located near the interpolation variable vector φ ^* and corresponding to its dynamic map 1~2 ^{m is} set to φ[1]~φ[2 ^m ], it is used to find The key of the dynamic graph R _D (y; φ[], Φ ^* ) inserted between 1 and 2 ^m can be summarized as shown in the following table.

That is, using the vectors as the key, select the non-interpolation variable vector Φ from the parent map to be the same as the vector Φ ^* , and the 2 ^m interpolation variable vector Φ[1] in the vicinity of the bit interpolation variable vector φ ^* ]~Φ[2 ^m ] corresponds to the dynamic graph R _D (y).

Here, a method of selecting the interpolation variable vector φ[1] to φ[2 ^m ] in the vicinity of the interpolation variable vector φ ^{* will be} described. In the representative value of the interpolation variable φ ₁ (1 = 1, 2, ..., m), the maximum φ ₁ of the value φ ₁ ^* of the interpolation variable φ ₁ which does not exceed the interpolation variable vector φ ^* is set to φ _{m i n , 1} , the minimum φ ₁ not less than φ ₁ ^* is set to φ _{m a x , 1} , φ _{m i n , 1} is the interpolation variable vector of each element, and φ _{m a x , 1} is the interpolation variable vector of each element, which can be expressed by the following formula.

In addition, the above formula is of course φ _{m i n , 1} ≠φ _{m a x , 1} . φ _{m a x} and φ _{m i n} are the selected interpolation variable vectors φ[1] and φ[2 ^m ], respectively. In the following description for convenience, φ _{m a x} and φ _{m i n are also} referred to as both ends of the interpolation variable. In this case, if other φ[2], ..., φ[2 ^{m - 1} ] are represented together with both ends of the interpolation variable, they are expressed as follows.

That is, the dynamic graph R _D (y; φ[1], Φ ^* )~R _D (y; φ[2 ^m ], Φ ^* ) corresponding to φ[1]~φ[2 ^m ] is obtained from the mother Selected in the figure.

In the next step 409, by using the interpolation of the selected dynamic graph R _D (y; φ[1], Φ ^* ) ~ R _D (y; φ [2 ^m ], Φ ^* ) The correction map of the interpolation variable vector φ ^* . This interpolation formula is represented by the following formula.

Here, the interpolation of the above step 409 will be further specifically described. To simplify the description here, the interpolation variable Φ ₁ has only two scan speeds and one scan length. At this time, the interpolation variable vector φ is expressed by the following equation.

Here, s and v are the scan length and scan speed. At this time, the interpolation variable vector φ _{j of the} obtained dynamic graph can be expressed by the following expression.

Here, the number of representative values of the scan length s is four, and the number of representative values of the scan speed v is four, and the total number of interpolation variables vector φ _j of the obtained dynamic graph is 16 and the non-interpolation variable Φ is obtained. The total number of combinations of _j multiplied by 16 is the total number of dynamic graphs.

Figure 7 shows the vector space of this interpolated variable vector φ in a schematic manner. In the vector space, the horizontal axis represents the scanning length s, and the vertical axis represents the scanning speed v, and the position of the potential energy of the interpolation variable vector φ _j of the dynamic image R _D (y; φ _j , Φ ^* ) is obtained. The coordinates are displayed in white circles.

The scan length of the interpolation variable set in step 403 of FIG. 6 is s ^* , and the scanning speed is v ^* , which is used to indicate the bit energy of the interpolation variable vector φ ^* = (s ^* , v ^* ) of the current setting. Position coordinates, when represented by the black circle in Figure 7, the interpolation vector of four (2 ² ) interpolation vectors near the vector (the interpolation vector of the dynamic graph has been obtained) is selected as the inner The interpolated variable vector φ[1]~φ[4] is inserted, and then the interpolation is performed using the dynamic graph corresponding to the selected vector.

In Fig. 7, the points corresponding to the selected four interpolation variable vectors φ[1] to φ[4] are indicated by gray. Here, as shown in FIG. 7, the line segment s ₁ ~ s ₂ of the set value s ^* of the scan length is divided into t: 1-t, and the line segment v ₁ ~ v ₂ of the set value v ^* of the scanning speed is set. The point is divided into w: 1-w. At this time, the correction amount of the motion map corresponding to the interpolation variable vector φ ^* can be obtained by the following equation.

[Expression 23] R ^* (y; Φ ^* , Φ ^* ) = t. w. R(y;Φ[1],Φ ^* )+t. (1-w). R(y; Φ[2], Φ ^* )+(1-t). w. R(y; Φ[3], Φ ^* )+(1-t). (1-w). R(y;Φ[4],Φ ^* ).........(23)

Furthermore, this formula (23) corresponds to the above formula (20). In the above formula (23), R(y) is substituted into any of dx _k , dy _k , and d θ _k in the correction map.

Further, considering 8, the case where the interpolation vector φ ^* variable bit boundary line area is distinguished representative value of the set. In this case, since the coefficients associated with φ[1] and φ[2] are both 0, the interpolation is performed by a dynamic map corresponding to φ[3] and a dynamic map corresponding to φ[4].

Further, as shown in FIG. 9, when the interpolation variable vector φ ^{* of the} set value exists outside the region surrounded by the point of the interpolation variable vector φ _j (j=1 to 2 ^m (16)) of the representative value, That is, the interpolation of the interpolation variable vector Φ[1]~Φ[2 ^m ] using the representative value cannot be performed, so the interpolation vector of the most adjacent side can be directly used. In the example shown in Fig. 9, the most recent interpolation variable vector (interpolation variable vector in gray) is selected. That is, here, the representative value corresponding to the end of the setting range of the interpolation variable is saturated in the correction map.

Further, as shown in FIG. 9, when the interpolation variable vector φ ^{* of the} set value exists outside the region surrounded by the point of the interpolation variable vector φ _j (j=1 to 2 ^m (16)) of the representative value, The correction amount when the interpolation variable vector φ ^* is inserted in the set value can be obtained from the correction map of the 16 interpolation variable vectors Φ[1] to Φ[2 ^m ] by the division operation.

The method chosen in this case can vary with the nature of the interpolation variables. For example, when the interpolation variable vector φ ^{* is} set in the region of the scanning speed v < v ₀ , the correction amount can be completely made zero.

Returning to Fig. 6, after the end of step 409, the next step 411, i.e., whether or not the exposure to all of the illumination areas has been completed. This determination is affirmative at the point when the notification from the stage control device 19 that the irradiation area as the last exposure target has ended the exposure. If the determination is affirmative, the interpolation processing worker is ended, and if it is negative, the process proceeds to step 413.

In step 413, a wait is made until the exposure operation worker creates an image of the next exposure target in the file (track command) of the target position command of the reticle stage RST at the time of scanning exposure. During the waiting period, the correction processing unit repeats the determination of whether or not the exposure of all the irradiation areas has been completed in step 411. When the determination result is affirmative, the processing ends.

When the exposure operation worker has completed the creation of the file (track command) of the target position command of the reticle stage RST, the determination in step 413 is affirmative, and proceeds to step 415. In step 415, it is judged whether or not the exposure amount is changed when the exposure to the next irradiation region is performed.

In other words, depending on the case, the irradiation amount of the illumination light IL may be measured by a sensor or the like (not shown) during the scanning exposure period of each of the irradiation regions, and the average irradiation amount of the irradiation region may be calculated. At this time, when the average irradiation amount is smaller than the target value, the scanning speed must be reset to be lower than the currently set speed, and when the average irradiation amount is larger than the target value, the scanning speed must be set to be higher. In this case, the determination at step 415 becomes affirmative, and the process returns to step 405. That is, as long as there is a need to change the exposure amount, it is necessary to re-create the correction map under the exposure conditions corresponding to the changed exposure amount, so the processing of steps 405 to 409 is performed again to make it suitable for the change. Correction chart of exposure conditions.

Here, when the dynamic map for interpolation is not required to be changed even if the exposure amount is changed, the process returns to step 409 without returning to step 409, and only the interpolation operation is performed again.

Further, in the design information of the wafer, if the exposure amount is set to be changed with each irradiation region, the step 415 is also affirmative, and the correction map is reproduced (updated).

In step 415, the determination is negative, and the step 417 is performed to read the static image. In step 419, the correction amount of the total dynamic image correction amount and the static image correction amount is added to the reticle slice. The target track command of the RST. After the end of step 419, the process returns to step 411 again. After returning to step 411, the processing of steps 411 to 419 is repeated until the determination in step 411 becomes affirmative.

The target track command of the reticle stage RST to which the correction amount has been added is transmitted to the stage control device 19 by the exposure operation worker. Scanning exposure is performed while controlling the position of the reticle stage RST by the stage control device 19.

As described in detail above, according to the present embodiment, the main control device 20 is based on the non-parametric information (and the reticle R and the wafer W in the synchronous scanning are orthogonal to the optical axis of the projection optical system PL). Correction map R _C of the relative positional shift in the face (XY plane) to correct the relative position of the reticle stage RST (the reticle R) and the wafer stage WST (wafer W) in the synchronous scan Position, so there is no need to consider modeling errors. As a result, the correction residual of the reticle stage RST (the reticle R) and the wafer stage WST (wafer W) can be reduced, and the synchronous scanning can be performed, thereby reducing the transfer. The irradiation of the formed irradiation region is distorted to achieve high-precision exposure.

Further, according to the present embodiment, the correction map is used as the non-parameterized information, and the correction map includes the correction amount of the relative positional deviation of the two stages WST and RST in the sampling positions in the scanning direction of the synchronous scanning. The correction map is based on the information of the relative positional deviation measured in advance, and is not parameterized by modeling or the like, and the relative position correction of the two stages WST and RST can be performed by using the correction map. Achieve control of unmodeled errors.

If you want to use the correction map that is not based on the exposure conditions, you need to prepare a plurality of correction maps depending on the exposure conditions. Therefore, the more the number of correction maps is, the more the control accuracy of the relative positions of the two stages WST and RST can be improved. However, the number of correction maps can be determined after considering the memory capacity in the apparatus.

Further, according to the present embodiment, as the correction map, a dynamic correction map (dynamic graph R _D (y; φ _j , Φ _j )) depending on the relative positional deviation correction amount depending on the exposure conditions, and the exposure condition are not used. The static correction map (y; φ _j , Φ _j ) whose relative position deviates from the correction amount. In this way, as long as the correction map can be decomposed into those depending on the exposure conditions and those not depending on the exposure conditions, the correction can be flexibly performed depending on the exposure conditions.

For example, in the scanning exposure, if the correction amount of the static image R _s (y; φ _j , Φ _j ) is further added to the dynamic image R _D (y; φ _j , Φ _j ) corresponding to the exposure condition set at this time. If the correction amount is used to correct the two stages WST and RST, the two stages WST which are not parameterized by the conditions can be performed regardless of the exposure conditions. The relative position of the RST is corrected. That is, a plurality of dynamic maps corresponding to a plurality of exposure conditions that are likely to be set may be prepared first, and the non-parametric correction may be performed using a dynamic map corresponding to the set exposure conditions.

Further, in the present invention, although the correction map corresponding to a plurality of different exposure conditions may be prepared in advance without dividing into a still picture and a dynamic picture, since the dynamic picture can be easily exposed by the aforementioned low speed-high speed overlapping exposure. The result is obtained, and the static image can be easily obtained from the reference wafer. Therefore, as long as the correction map can be decomposed into one depending on the exposure condition and not depending on the exposure condition, the correction map can be improved as shown in the embodiment. The accuracy of the correction amount.

Further, according to the present embodiment, when there is no motion map corresponding to a predetermined exposure condition, a plurality of exposure conditions in the vicinity of the exposure conditions are selected from a plurality of exposure conditions in which the motion map has been acquired. Next, an interpolation operation is performed using the selected dynamic image under a plurality of exposure conditions, thereby creating a dynamic map under the specified exposure conditions. Next, the relative position of the two stages WST and RST in the synchronous scan is corrected using the created dynamic map. Thereby, even if exposure conditions in which continuous values are obtained in the exposure conditions and exposure conditions in which the correction map is not obtained are set, high-precision correction of the relative positions of the two stages can be achieved in accordance with the exposure conditions.

Further, the interpolation calculation in the present embodiment is performed only under the exposure condition (i.e., the interpolation variable) at which the continuous value can be obtained, and the non-interpolation variable in which only the discrete setting state can be obtained is not performed. In this way, the number of exposure conditions for performing the interpolation operation can be reduced, and the time required for the correction operation can be shortened.

Further, in the present embodiment, it is determined whether or not the exposure condition is changed for each irradiation region, and if the exposure condition is changed, that is, the changed exposure condition is adjusted, the correction is performed to recreate the correction map. Thereby, even if the exposure conditions are changed in the exposure to the plurality of irradiation regions of the wafer W, the correction can be performed with high precision in accordance with the conditions.

Further, in the present embodiment, the correction map is created before the target position of the reticle stage RST in the scanning exposure is corrected. Specifically, under a plurality of different exposure conditions, the reticle R on which the plurality of measurement patterns are formed and the wafer W are scanned synchronously with respect to the illumination light IL, thereby performing scanning exposure to obtain each The transfer result of the plurality of measurement marks Mk under the exposure conditions, and the positional deviation amount of the transfer position of each measurement mark Mk is detected based on the obtained transfer result, and further, based on the detected measurement marks Mk The amount of positional deviation of the transfer position is calculated, and a non-parameterized correction map corresponding to each exposure condition is calculated. Therefore, since the correction map based on the amount of positional deviation measured from the actual exposure result is used for correction, high-precision correction of the two stages WST and RST can be realized.

Further, in the present embodiment, scanning exposure is performed plural times for each exposure condition, and the correction amount is calculated based on the average value of the positional deviation amounts of the transfer images of the respective marks. Thereby, the amount of positional deviation which is not affected by an accidental error generated at the time of transfer or a measurement error of the measuring device can be obtained. Further, since the low-pass filter is applied to the exposure result, smooth correction can be performed.

Further, in the present embodiment, an inverse filter corresponding to the width of the illumination area IAR irradiated by the illumination light IL in the scanning direction is used, and the positional deviation amount of the transfer position of each measurement mark Mk is decomposed and The relative position of the two-dimensional XY position coordinates orthogonal to the optical axis AX of the projection optical system PL is detected based on the positional deviation of the transfer position of each measurement mark Mk by the deconvolution. Non-parametric information related to the amount of positional deviation. Transferring the image of the mark Mk formed on the wafer W, as a result of the folding of the projected image projected on the wafer W during the passage of the illumination region IAR by the mark Mk on the reticle R, as long as the exposure result is By performing the decompression product, the positional deviation amount of the actual relative position of the two stages WST and RST can be obtained with high precision, and a correction map capable of high-precision correction can be obtained.

Further, a method of obtaining a correction map capable of high-precision correction with high precision is not limited to the above method.

Fig. 10 is a flowchart showing a subroutine 205' of a modification of the subroutine 205 of the above embodiment. As shown in FIG. 10, in the subroutine 205', steps 501 to 517 are performed in the same manner as steps 301 to 317 of the second routine 205 of FIG. 5 (however, the steps are not included. The deconvolution product of 313 corresponds to the step), and therefore the description of the steps is omitted.

In the next step 519, similarly to the step 217 of FIG. 3, the dynamic map is updated for each combination of the representative values of the exposure conditions based on the correction amount of the sampling position obtained in step 517. When the dynamic map obtained so far is R _j (y; φ _j , Φ _j ), the corrected residual (tracking residual) based on the positional deviation calculated this time is set to Ej (y; φ) _{When j} , Φ _j ), the correction map R _j (y; φ _j , Φ _j ) can be updated by the following equation so that the correction amount is increased by the amount of the correction residual.

[Expression 24] R _j (y; Φ _j , Φ _j ) = R _j (y; Φ _j , Φ _j ) + E _j (y; Φ _j , Φj) (24)

In the next step 521, low-speed high-speed overlap exposure is performed in the same manner as step 201 of Fig. 3 . However, in the high-speed exposure here, the exposure is performed while correcting the target position of the reticle stage RST using the saved correction map.

In the next step 523, the measurement of the positional deviation amount is performed in the same manner as step 203 of Fig. 3, and in the subsequent step 525, it is judged whether or not the average value of the positional deviation amount is smaller than the preset threshold value. If the result of this determination is affirmative, the subroutine 205' is ended, and if not, the process returns to step 501.

That is, in the normal routine 205', steps 501 to 525 are repeated until the positional deviation of the transfer position of each measurement mark Mk on the wafer W is within the allowable range, and the past is obtained. The positional deviation amount is updated, and the dynamic map corresponding to each exposure condition is updated, and the scanning exposure is performed in a state where the relative positions of the two stages WST and RST in the synchronous scanning are corrected based on the updated dynamic image. In this way, if the dynamic map is updated until the correction residual is within the allowable range, the correction amount of the dynamic map can be forced into the correction amount in which the correction residual is almost zero, and the correction can be reduced as in the case of performing the above-described de-folding. Residuals improve the correction accuracy.

Further, in step 525, the end determination condition of the forced insertion is not limited to the comparison of the index value of the positional deviation amount (in this example, the average value) and the threshold value. The number of forced insertions may be fixed, or may be terminated when the change in the index value of the positional deviation amount becomes a predetermined range. Further, in the case of the static image creation, of course, the low-speed high-speed overlap exposure is repeated to update the still image until the correction residual enters the allowable range, whereby the correction residual can be reduced.

Further, in the above embodiment, since the correction information created is a non-parametric correction map, it is easier to push the correction amount than the correction function for making the correction information parameterized. Therefore, as long as the correction map is used as the correction information, the number of forced insertions can be reduced, and the time required to create the correction information can be shortened.

Further, compared with the above-described modification, the deconvolution method of the above-described embodiment can shorten the time required to create the correction map, and there are cases in terms of productivity.

Further, in the above-described embodiment, the control phase of the wafer stage WST is one of the non-interpolation variables, but the control phase has, for example, the following two types.

(1) Control phase (this is control phase 1): The speed of the scanning direction of the wafer stage WST becomes completely zero with the deceleration after the scanning exposure of the previous irradiation area, and then the wafer stage WST is in the X-axis direction ( The non-scanning direction is stepwise moving, and after the stepping movement is completely completed, the scanning direction of the wafer stage WST for performing the exposure of the next irradiation area is started to be accelerated.

(2) Control phase (this is control phase 2): the speed of the scanning direction of the wafer stage WST is completely zero before the deceleration after the scanning exposure of the previous irradiation area, and the wafer stage WST is moved to the X-axis direction. In the step movement, the wafer stage WST is reversed in the traveling direction of the scanning direction to start scanning exposure of the next irradiation area.

Controlling the phase will have a great influence on the dynamic characteristics of the scanning exposure of the two stages WST and RST. For example, in the case where the phase 1 is controlled as described above, the positional deviation of the image of the mark Mk hardly changes even if the scanning speed or the like is changed. However, in the case of controlling the phase 2, the mark may be marked with the scanning speed. The positional deviation of the image of Mk varies greatly.

In this way, there is also a setting method of the non-interpolation variable, and the sensitivity of the dynamic characteristics of the two stages WST and RST is reduced in the interpolation variable. In this case, the interpolation variable may not be included in the interpolation variable vector. That is, with the setting of non-interpolation variables, it is also possible to reduce the number of interpolation variables. In this way, the number of correction maps created can be reduced, which is advantageous for productivity.

Further, the non-interpolation variables are not limited to those described above. For example, a non-interpolation variable corresponding to a process such as a photoresist thickness or a material of the wafer W may be set. Further, the XY position of the irradiation region to be exposed may be set to a non-interpolation variable or an interpolation variable. When the non-interpolation variable is set, for example, the wafer W can be divided into a plurality of regions (for example, a central portion, an outer peripheral side, a +Y side, a -Y side, a +X side, and a -X side), and the value can be set.

Further, in the above embodiment, the operation variable of the still image is the Y position of the reticle stage RST, but the operation variable is not limited thereto, and the operation variable may be the XY position of the wafer stage WST. When the bending component of the moving mirror provided on the wafer stage WST is larger than that of the reticle stage RST, this method is preferable.

Further, in the above-described embodiment, the operation variable of the motion map is the moving distance of the reticle stage RST from the start of exposure. However, the present invention is not limited thereto, and the variable having the center of the irradiation area as the origin can be regarded as The operational variables of the dynamic graph.

Further, in the above embodiment, the target track command of the reticle stage RST is corrected in order to correct the relative positions of the two stages WST and RST, but the present invention is not limited thereto. For example, the correction map can also be used to correct the measured value of the interferometer 16. Further, the static map can be used to correct the position of the wafer stage WST, and the dynamic map can be used to correct the position of the reticle stage RST, or vice versa. The point is that the relative position of the two stages WST and RST can be shifted by the correction amount of the correction map as a result.

Further, in the above-described embodiment, the case where the off-axis type FIA system (imaging type alignment sensor) is used as the alignment system AS is described, but it is not limited to the FIA system, and may of course be combined individually or appropriately. An alignment sensor is used, which detects the scattered light or the diffracted light generated from the object mark by the coherent detection light, or the two diffracted lights generated by the object mark (for example, the same number of times The light (±1 time, ±2 times, ..., ±n times of diffracted light) is interfered with each other for detection. When the same number of diffracted lights are interfered with each other and detected, the diffracted light can be independently detected at each number of times, and the detection result of at least one number of times can also be used to illuminate a plurality of coherent beams having different wavelengths. The mark is then detected by interfering with each other of the diffracted light of each order at each wavelength. Further, the configuration of the alignment system AS may be either a TTR (Through The Reticle) method, a TTL (Through The Lens) method, or an off-axis method.

Further, the present invention is not limited to the above-described stepwise scanning type exposure apparatus of the above embodiment, and various scanning type exposure apparatuses such as a proximity type exposure apparatus (X-ray exposure apparatus, etc.) are also applicable. For example, in the case of the scanning type exposure apparatus of the proximity type, although the projection optical system does not exist, the control apparatus may adopt a configuration in which the relative position of the reticle and the object in the two-dimensional plane in the synchronous scanning is used. A non-parametric information on the amount of deviation to control the drive system of the reticle stage (for holding the reticle) and the drive system for controlling the object stage (for holding the sensing object) to correct the reticle of the synchronous scanning The relative position to the object. In this case, as in the above-described embodiment, it is not necessary to consider the modeling error, thereby reducing the correction residual when the reticle and the object are in the corrected relative position, and achieving high-precision synchronous scanning between the two, further achieving High precision exposure.

In the above embodiment, as the light source, a vacuum ultraviolet light source such as a far-ultraviolet light source such as KrF excimer laser light, ArF excimer laser light, F ₂ laser light, or a bright line of the ultraviolet region (g line, i) may be used. Other types of harmonic generating devices such as YAG lasers or semiconductor lasers can be used in addition to ultrahigh pressure mercury lamps such as wires. For example, when the light in the vacuum ultraviolet region is used as the illumination light for exposure, it is not limited to the laser light output from each of the light sources, and a harmonic generating device capable of generating harmonics may be used. (Er) (or both ytterbium and ytterbium (Yb)) fiber amplifiers that amplify a single wavelength of laser light from the infrared or visible region of a DFB semiconductor laser or fiber laser and crystallize it at a wavelength of non-linear optical crystallization Converted to ultraviolet light.

Further, in the above embodiment, the illumination light IL as the exposure device is not limited to light having a wavelength of 100 nm or more, and of course, light having a wavelength of less than 100 nm may be used. For example, in recent years, in order to expose a pattern of 70 nm or less, an SUV or a plasma laser is used as a light source to generate EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm), and according to the The development of a total reflection reduction optical system designed with an exposure wavelength (for example, 13.5 nm) and an EUV exposure apparatus using a reflective mask. In this device, since the configuration of scanning exposure by scanning the reticle and the wafer using the circular arc illumination can be considered, such a device can also be suitably applied to the present invention. Further, an exposure apparatus using a charged particle beam such as an X-ray, an electron beam, or an ion beam is also applicable to the present invention.

Further, the present invention is also applicable to, for example, a liquid immersion type exposure apparatus in which a liquid (for example, pure water or the like) is filled between the optical system PL and the wafer W in the pamphlet of International Publication WO099/49504.

Further, the present invention is also applicable to Japanese Laid-Open Patent Publication No. Hei 10-163099, Japanese Patent Application No. Hei 10-214783 (corresponding to U.S. Patent Nos. 6,341,007, 6,400,441, 6,549,269 and 6,590,634). A multi-stage type exposure apparatus having a plurality of wafer stages (for holding wafers) disclosed in the specification of U.S. Patent No. 5,969,441, or the specification of U.S. Patent No. 6,208,407. Further, the present invention is also applicable to an exposure apparatus having another measurement stage in addition to the wafer stage WST as disclosed in Japanese Laid-Open Patent Publication No. 2000-164504 (corresponding to the specification of U.S. Patent No. 6,897,963). In this case, the irradiation amount monitor 58 or the illuminance unevenness sensor 21P may be disposed on the measurement stage. The disclosures of the above-mentioned publications and corresponding US patent applications are hereby incorporated by reference in their entire extent in the extent of the extent of the disclosure of

Further, the projection optical system PL of the exposure apparatus according to the above embodiment may be any one of a refractive system, a catadioptric system, and a reflection system: either a reduction system, an equal magnification system, and an amplification system: projection thereof The image can be either an inverted image or an erect image.

Further, in the above embodiment, a light-transmitting type mask in which a predetermined light-shielding pattern (or a phase pattern or a light-reducing pattern) is formed on the light-transmitting substrate is used, but a predetermined reflection pattern may be used for light reflection. The light-reflecting type mask on the substrate may of course be replaced with such a mask, and an electronic mask (variable shaping mask) having a transmission pattern, a reflection pattern, or a light-emitting pattern formed based on the electronic material of the pattern to be exposed may be used. Such an electronic mask is shown, for example, in U.S. Patent No. 6,778,257.

Further, the above-described electronic mask includes two concepts of a non-light-emitting image display device and a self-luminous image display device. Here, the non-light-emitting image display device is also called a spatial light modulator, and is a component that spatially modulates the amplitude, phase, or polarization state of light, and is classified into a transmissive spatial light tone. Transducer and reflective spatial light modulator. The transmissive spatial light modulator includes a liquid crystal display (LCD), an electrochromic display (ECD), and the like. Further, the reflective spatial light modulator includes a digital micro mirror element (DMD: Digital Mirror Device or Digital Micro-Mirror Device), a mirror array, a reflective liquid crystal display element, an electrophoretic display (EPD: ElectroPhoretic Display), and an electronic paper. (or electronic ink), Grating Light Valve, etc.

Further, the self-luminous image display device includes a cathode ray tube (CRT: Cathode Ray Tube), inorganic electroluminescence (inorganic EL: Electro Luminescence), a field emission display (FED: Field Emission Display), and a plasma display (PDP: Plasma Display Panel) or a solid-state light source wafer having a plurality of light-emitting points, a solid-state light source wafer array in which the wafers are arranged in a plurality of arrays, or a solid-state light source array in which a plurality of light-emitting points are grouped into one substrate (for example, a light-emitting diode (LED: Light Emitting Diode), an OLED (Organic Light Emitting Diode) display, a laser diode (LD: Laser Diode) display, and the like. Further, when the fluorescent substance provided in each pixel of the known plasma display (PDP) is removed, it is a self-luminous type image display element that emits light in the ultraviolet region.

Moreover, the present invention is also applicable to an exposure apparatus in which two reticle patterns are synthesized on a wafer by a projection optical system, and exposed to one illumination area on the wafer at substantially the same time by one scanning exposure. .

Further, in the above-described embodiment, the object to be patterned (the object to be exposed as the irradiation energy beam) is not limited to the wafer, and may be a glass substrate, a ceramic substrate, or another object such as plastic.

Further, the present invention is not limited to an exposure apparatus for semiconductor manufacturing, and other applicable objects are exemplified by an exposure apparatus for manufacturing a display including a liquid crystal display element and transferring the element pattern onto a glass plate; An exposure apparatus for manufacturing a thin film magnetic head to transfer a component pattern onto a ceramic wafer; and an exposure apparatus for manufacturing a photographic element (CCD or the like), a micromachine, an organic EL, a DNA wafer, or the like. Further, the exposure apparatus to which the present invention is applied is not limited to an exposure apparatus for manufacturing a micro component such as a semiconductor element, and is used for manufacturing a marking line used in an exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, and an electron beam exposure apparatus. A sheet or a reticle, and an exposure device that transfers a circuit pattern to a glass substrate or a ruthenium wafer is also suitable. Here, an exposure apparatus using DUV (extreme ultraviolet) light or VUV (vacuum ultraviolet) light or the like is generally used as a transmission type reticle, and the reticle substrate used is quartz glass, fluorine-doped quartz glass, fluorite. , manganese fluoride, or crystal. Further, in the X-ray exposure apparatus or the electron beam exposure apparatus of the proximity type, a transmissive mask (Stencil mask; membrane mask) is used, and a photomask substrate is used as a wafer or the like.

The manufacturing of the semiconductor device is carried out by the following steps: the function of the component, the step of designing the performance, the step of fabricating the reticle according to the aforementioned design steps, the step of fabricating the ruthenium wafer from the ruthenium material, and the exposure device 100 of the foregoing embodiment The step of transferring the wire pattern to the wafer; the assembly step of the component (including the cutting step, the bonding step, the packaging step), and the inspection step, etc., are manufactured.

As described above, the exposure method, the exposure apparatus, and the element manufacturing method of the present invention are applied to the production of micro-elements such as semiconductor elements.

Mk. . . mark

R. . . Marker

RST. . . Marking line stage

PL. . . Projection optical system

W. . . Wafer

WST. . . Wafer stage

AS. . . Alignment system

IL. . . Illumination light

10. . . Lighting system

15. . . Moving mirror

16. . . Marker interferometer

17. . . Moving mirror

18. . . Wafer interferometer

19. . . Stage control device

20. . . Main control unit

twenty four. . . Wafer stage drive unit

25. . . Wafer holder

100. . . Exposure device

Fig. 1 is a schematic view showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention.

Fig. 2 is a view showing a state in which a pattern on a reticle passes through an illumination region.

Fig. 3 is a flow chart showing the creation processing of the correction map.

4(A) is a view showing a pattern example of a measurement reticle for low-speed-high-speed overlap exposure, and FIG. 4(B) shows a schematic manner of the X-axis direction, the Y-axis direction, and the θ z direction. A map of the amount of positional deviation.

Fig. 5 is a flow chart showing the processing of the subroutine for calculating the correction amount.

Figure 6 is a flow chart showing the processing in the correction processing worker.

Figure 7 is a diagram for explaining the interpolation of the two-dimensional correction variable vector (1).

Figure 8 is a diagram for explaining the interpolation of the two-dimensional correction variable vector (2).

Figure 9 is a diagram for explaining the interpolation of the two-dimensional correction variable vector (3).

Fig. 10 is a flow chart showing another method of creating a correction map.

Claims (14)

An exposure method for transferring a pattern formed on a reticle to a surface while synchronously scanning a reticle and an object with respect to illumination light under a predetermined exposure condition, comprising: a correction step, In the synchronous scan, the relative position of the reticle and the object in the two-dimensional plane is deviated from the associated non-parameterized information to correct the relative position of the reticle and the object in the synchronous scan; as the non-parameterized information, A dynamic correction map that depends on the relative positional deviation correction amount of the exposure condition and a static correction map that does not depend on the relative positional deviation correction amount of the exposure condition are used. The exposure method of claim 1, wherein the transfer of the pattern is performed by projecting the pattern onto the object through a projection optical system; the reticle and the object are respectively associated with the projection optical system The optical axis is orthogonal to the first moving surface and the second moving surface. The exposure method of claim 1, wherein in the correcting step, the correction map is used as the non-parameterized information, and the correction map includes correction of relative position deviation of each sampling position in the scanning direction of the synchronous scan. the amount. The exposure method of claim 3, wherein the correcting step comprises: a first step, when there is no dynamic correction map corresponding to the predetermined exposure condition, the plurality of dynamic correction maps are obtained from the plurality of In the exposure condition, selecting a plurality of exposure conditions in the vicinity of the exposure condition; In the second step, the dynamic correction map under the specified exposure conditions is created by using the interpolation operation of the selected dynamic correction map under the plurality of exposure conditions; and the third step is performed using the third correction step. The correction map corrects the relative position of the object and the reticle in the synchronous scan. The exposure method of claim 4, wherein the interpolation operation is performed only on the exposure conditions of the continuous values. The exposure method of claim 1, wherein before the correcting step, further comprising: obtaining the step of illuminating the reticle and the object formed with the plurality of measurement patterns under the plurality of different exposure conditions Scanning the light to perform the scanning exposure to obtain the transfer result of the plurality of measurement patterns under the respective exposure conditions; and the detecting step of detecting the measurement patterns according to the obtained transfer result And a calculating step of calculating the non-parametric information corresponding to each exposure condition based on the detected positional deviation of the transfer position of each of the measurement patterns. The exposure method of claim 6, wherein the obtaining step, the detecting step, and the calculating step are repeated until the positional deviation amount of the measurement pattern transfer positions on the object becomes within an allowable range In the obtaining step, the non-parametric information corresponding to each exposure condition is updated using the calculation result of the previous calculation step, and then According to the updated non-parameterized information, while correcting the relative position of the reticle and the object in the synchronous scan, the reticle and the object are synchronously scanned with respect to the illumination light under a predetermined exposure condition, and are formed at the same time. The pattern of the reticle is transferred to the object through the projection optical system. The exposure method of claim 6, wherein in the calculating step, an inverse filter corresponding to a width of the region illuminated by the illumination light in the scanning direction is used, and a transfer position of each measurement pattern is used. Deviating the amount of positional deviation; detecting the two-dimensional surface of the reticle and the object orthogonal to the optical axis of the projection optical system according to the positional deviation of the transfer position of the measurement pattern by the de-folding The non-parametric information related to the amount of relative position deviation within. A method of manufacturing a component, comprising: a lithography step of scanning and exposing an object using an exposure method according to any one of claims 1 to 8 to form a pattern on the object. An exposure apparatus for transferring a pattern formed on a photomask to an object, comprising: an illumination system for illuminating the mask with illumination light; and a first moving body capable of holding the mask over the traverse The illuminating light path of the illumination system moves in the first moving surface; the second moving body can hold the object moving in the second moving surface that traverses the illuminating light path; and the driving device drives the first moving body And the second moving body, wherein the reticle and the object are synchronized with the illumination light under a predetermined exposure condition Scanning; and correcting means for correcting the reticle and the object in the synchronous scan based on non-parameterized information relating to the relative positional deviation of the reticle from the object in a two-dimensional plane in the synchronous scan Relative position; as the non-parameterized information, a dynamic correction map that depends on the relative positional deviation correction amount of the exposure condition, and a static correction map that does not depend on the relative positional deviation correction amount of the exposure condition are used. The exposure apparatus of claim 10, further comprising: a projection optical system for projecting the pattern onto the object; wherein the first moving surface and the second moving surface are both optical axes of the projection optical system Orthogonal. The exposure apparatus of claim 10, wherein the correction means uses the correction map as the non-parameterized information, the correction map including the correction amount of the relative positional deviation of each sampling position in the scanning direction of the synchronous scanning . The exposure device of claim 12, wherein the correction device comprises: a selection device, when there is no dynamic correction map corresponding to the predetermined exposure condition, the plurality of exposure conditions from which the dynamic correction map has been obtained And selecting a plurality of exposure conditions in the vicinity of the exposure condition; and the forming device is configured to perform dynamic correction under the specified exposure condition by using the interpolation operation of the selected dynamic correction map under the plurality of exposure conditions And the relative position correction device uses the correction map created to correct The relative position of the object in the synchronous scan to the reticle. The exposure apparatus of claim 13, wherein the preparation means performs the interpolation operation only on the exposure conditions of the continuous values.