TW201608344A - Exposure apparatus, exposure method and device manufacturing method - Google Patents

Abstract

An exposure apparatus (1) irradiates a mask (111) with an energy beam (EL) and prints a mask pattern, which is formed on a pattern surface (111PA) of the mask, on an object (141). The exposure apparatus has a light irradiation unit (151, 152) which is configured to irradiate a predetermined surface of the mask with a plurality of measurement lights whose incident angles to the predetermined surface are different from each other; and a sensor unit (153) which is configured to detect at least one portion of the plurality of measurement lights which are reflected or scattered by the predetermined surface.

Description

Exposure apparatus and exposure method, and component manufacturing method

The present invention relates to the technical fields of, for example, an exposure apparatus and an exposure method, and a component manufacturing method.

The exposure device is used in, for example, a lithography step of manufacturing an electronic component such as a semiconductor element or a liquid crystal display element. The exposure device transfers a mask pattern formed on a photomask (that is, a reticle) through a projection optical system to a plurality of irradiation regions on a wafer (or any object such as a glass substrate) coated with a photoresist. each. In this case, it is important to accurately transfer the reduced image of the mask pattern corresponding to the projection magnification of the projection optical system to each of the irradiation regions on the wafer. That is, the overlay accuracy of the mask and the wafer is quite important.

In order to accurately transfer the reduced image of the mask pattern to each of the irradiation regions, for example, Patent Document 1 discloses the use of a reticle alignment mark formed on the reticle in a predetermined positional relationship with the reticle pattern, and The technique of forming wafer alignment marks on a wafer in a manner that each of the illumination regions has a predetermined positional relationship.

Patent Document 1: US Patent No. 5,464,413

Techniques for using reticle alignment marks and wafer alignment marks, according to reticle The position of the reticle pattern is estimated by the position of the alignment mark and the position of each of the irradiation areas is estimated based on the position of the wafer alignment mark. Here, the estimation of the position of the mask pattern based on the position of the reticle alignment mark is established for the following reasons. First, the reticle alignment mark and the reticle pattern are simultaneously drawn on the glass substrate by an electron beam exposure apparatus. Therefore, the positional relationship between the reticle alignment mark and the reticle pattern is secured within the range of the drawing error of the electron beam exposure apparatus. Therefore, by detecting the position of the reticle alignment mark by the exposure device, the position of the reticle pattern having a predetermined positional relationship with the reticle alignment mark can be estimated.

However, the estimation of the position of the reticle pattern based on the position of the reticle alignment mark is established until the positional relationship between the reticle alignment mark and the reticle pattern is unchanged. That is, the position of the reticle pattern based on the position of the reticle alignment mark may not be satisfied when the positional relationship between the reticle alignment mark and the reticle pattern is changed.

For example, deformation of the mask pattern may occur due to thermal deformation of the mask caused by exposure light. Here, in general, the position control (so-called reticle alignment) of the reticle using the reticle alignment mark is often used to form an outer circumference of the reticle pattern (for example, any four points around the reticle pattern). The reticle alignment mark. In this alignment of the reticle, except for the positional information in the plane of the reticle pattern (for example, in the XY plane), only the amount of linear deformation of the reticle pattern is measured (that is, the predetermined area on the reticle pattern) The amount of linear fluctuation, for example, a change in magnification in the X-axis direction and the Y-axis direction, or a parameter such as an orthogonality or a rotation amount). Therefore, according to the alignment of the reticle, the linear deformation of the reticle pattern is compensated, but the nonlinear deformation of the reticle pattern may not be compensated. Therefore, it is difficult to accurately estimate the position of the mask pattern in accordance with the position of the reticle alignment mark in the state of the deformation of the mask pattern.

On the other hand, it can be considered that a plurality of reticle sheets are formed around the reticle pattern. By aligning the marks, the amount of nonlinear deformation of the reticle pattern (i.e., the amount of nonlinear variation of a predetermined area on the reticle pattern) can be measured. However, the more the number of reticle alignment marks is, the more time it takes to detect the position of the reticle alignment marks, and therefore, the yield of the exposure apparatus is greatly reduced.

An object of the present invention is to provide an exposure apparatus, an exposure method, and a device manufacturing method which can appropriately estimate the position of a mask pattern formed on a photomask.

In the first exposure apparatus, the energy beam is irradiated onto the photomask, and the mask pattern formed on the pattern surface of the mask is transferred to the object, and the light irradiation unit is provided to irradiate the predetermined surface of the mask. a plurality of measurement lights different from each other with respect to an incident angle of the predetermined surface; and a sensor portion detecting at least a portion of the plurality of measurement lights reflected or scattered on the predetermined surface.

In the second exposure apparatus, the energy beam is irradiated onto the photomask, and the mask pattern formed on the pattern surface of the mask is transferred to the object, and the light irradiation unit is provided to irradiate the predetermined surface of the mask. Measuring light; the sensor portion detecting at least a portion of the measurement light reflected or scattered on the predetermined surface; and the moving portion moving at least one of the light irradiation portion and the sensor portion.

In the third exposure apparatus, the energy beam is irradiated onto the photomask, and the mask pattern formed on the pattern surface of the mask is transferred to the object, and the light irradiation unit is provided to rotate forward with the mask pattern. a second timing printed on the object at a second timing different from each other, the measurement light is irradiated onto the predetermined surface of the mask; and the sensor portion detects the reflection on the predetermined surface at a third timing different from the first timing Scattering at least a portion of the measured light.

In the first exposure method, the energy beam is irradiated to the reticle and the reticle pattern formed on the pattern surface of the reticle is transferred to the object, wherein the predetermined surface of the reticle is irradiated with respect to the predetermined surface a plurality of measurement lights having different incident angles from each other; detecting at least a portion of the plurality of measurement lights reflected or scattered on the predetermined surface.

In the second exposure method, the energy beam is irradiated to the reticle and the reticle pattern formed on the pattern surface of the reticle is transferred to the object, wherein the light illuminating portion is used to illuminate the predetermined surface of the reticle with the measuring light. And detecting at least a portion of the measurement light reflected or scattered on the predetermined surface by using the sensor portion; moving at least one of the light irradiation portion and the sensor portion.

In the third exposure method, the energy beam is irradiated to the reticle and the reticle pattern formed on the pattern surface of the reticle is transferred to the object, wherein the reticle pattern is positively transferred to the object The second timing of the timing difference is that the predetermined surface of the mask is irradiated with the measurement light, and at least the third timing different from the first timing, at least a part of the measurement light reflected or scattered on the predetermined surface is detected.

In the device manufacturing method, the mask pattern is transferred to the sensing substrate by the first exposure method, the second exposure method, or the third exposure method, and the sensing substrate to which the mask pattern is transferred is developed.

The effects and other advantages of the present invention will be apparent from the embodiments described below.

1‧‧‧Exposure device

11‧‧‧ reticle stage

111‧‧‧ reticle

111PA‧‧‧ pattern area

111RA‧‧‧ reticle alignment mark

112‧‧‧ reticle stage drive system

113‧‧‧ reticle stage loading plate

113a‧‧‧ openings

114‧‧‧ recess

114a‧‧‧ openings

114SL‧‧‧Sliding parts

115‧‧‧ reticle reference plate

115FA‧‧‧ alignment mark

115MA‧‧‧ marked area

116‧‧‧ reticle laser interferometer

116a‧‧‧Mobile mirror

119‧‧‧ reticle alignment detection system

12‧‧‧Lighting

13‧‧‧Projection Optics

14‧‧‧ Wafer stage

141‧‧‧ wafer

142‧‧‧ Wafer Stage Drive System

144‧‧‧ reference board

146‧‧‧Watt laser interferometer

146a‧‧‧Mobile mirror

15‧‧‧ spot measuring device

151‧‧‧Light source

152‧‧‧Optical components

153‧‧‧ Concentrating lens

154‧‧‧Projection lens

155‧‧‧ pinhole plate

156‧‧‧Light-receiving components

16‧‧‧Main control unit

17‧‧‧ memory

25‧‧‧ drive mechanism

Fig. 1 is a side view showing an example of the configuration of an exposure apparatus according to the first embodiment.

Fig. 2 (a) is a plan view showing a configuration of a periphery of a reticle stage provided in the exposure apparatus of the first embodiment, and Fig. 2 (b) is a view showing a periphery of a reticle stage shown in Fig. 2 (a). II-II' profile.

3(a) is a block diagram showing an example of a configuration of a spot measuring device, FIG. 3(b) is a cross-sectional view showing an optical member provided in the spot measuring device, and FIG. 3(c) is a view showing an optical member provided in the spot measuring device. Top view.

4(a) shows the measurement object of the spot measuring device in a manner corresponding to the reticle stage 111. 4(b) is a plan view showing a light receiving surface of the light receiving element provided in the spot measuring device, and FIG. 4(c) is a graph showing spot information obtained from the measurement result of the spot measuring device.

Fig. 5 is a side view showing an example of the state of the exposure apparatus when the second spot obtaining operation is performed.

6(a) to 6(d) are graphs showing the spot information obtained from the measurement result of the spot measuring device and the amount of fluctuation of each of the measurement target regions measured in the X-axis direction and the Y-axis direction measured from the spot information.

7 is a graph showing the amount of change in the measurement target region from which the measurement error due to the deviation of the output of the speckle measurement device is removed, together with the variation amount of the measurement target region in which the measurement error due to the deviation of the output of the speckle measurement device is not removed. chart.

8( a ) to ( c ) are graphs showing fluctuation amounts of the measurement target regions measured in the X-axis direction and the Y-axis direction measured from the spot information.

FIG. 9 is a block diagram showing an example of the configuration of each spot measuring device provided in the exposure apparatus according to the first modification.

FIG. 10 is a block diagram showing an example of a configuration of each spot measuring device provided in the exposure apparatus according to the second modification.

FIG. 11 is a block diagram showing an example of a configuration of each spot measuring device provided in the exposure apparatus according to the third modification.

Fig. 12 is a block diagram showing an example of the configuration of each spot measuring device provided in the exposure apparatus of the fourth modification.

Fig. 13 is a plan view showing a configuration of a periphery of a reticle stage provided in the exposure apparatus of the second embodiment.

14(a) and 14(b) are plan views showing an example of a movement form of the spot measuring device.

Fig. 15 is a flow chart showing a method of manufacturing a micro device such as a semiconductor element.

Hereinafter, embodiments of the exposure apparatus, the exposure method, and the element manufacturing method of the present invention will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below.

In the following description, the positional relationship of the various constituent elements constituting the exposure apparatus will be described using the XYZ orthogonal coordinate system defined by the X-axis, the Y-axis, and the Z-axis orthogonal to each other. In addition, in the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a horizontal plane is positive) The direction of the intersection is essentially the up and down direction). Further, the rotation directions around the X-axis, the Y-axis, and the Z-axis (that is, the oblique directions) are referred to as the θ X direction, the θ Y direction, and the θ Z direction, respectively.

(1) Exposure apparatus 1 of the first embodiment

The exposure apparatus 1 of the first embodiment will be described with reference to Figs. 1 to 8 .

(1-1) Composition of exposure device 1

First, the configuration of the exposure apparatus 1 according to the first embodiment will be described with reference to Fig. 1 and Figs. 2(a) and 2(b). Fig. 1 is a side view showing an example of the configuration of an exposure apparatus 1 according to the first embodiment. Fig. 2 (a) is a plan view showing a configuration of a periphery of a reticle stage 11 provided in the exposure apparatus 1 of the first embodiment. Fig. 2(b) is a cross-sectional view taken along the line II-II' of the periphery of the reticle stage 11 shown in Fig. 2(a).

As shown in FIG. 1, the exposure apparatus 1 includes a reticle stage 11, an illumination system 12, a projection optical system 13, a wafer stage 14, a spot measuring device 15, a main control unit 16, and a memory 17.

The reticle stage 11 can hold the reticle 111. The reticle stage 11 can be released Hold the reticle 111.

The reticle stage 11 can be along a plane (for example, an XY plane) including a region (i.e., an illumination region IR to be described later) that is irradiated with the exposure light EL emitted from the illumination system 12 while holding the reticle 111. mobile. The reticle stage 11 is movable in the Y-axis direction. For example, the reticle stage 11 can also be moved in the Y-axis direction by the action of the reticle stage drive system 112 including the planar motor. The reticle stage 11 may be moved along the Y-axis direction or may be moved along the Y-axis direction, along the X-axis direction, the Z-axis direction, the θ X direction, the θ Y direction, and the θ Z direction. At least one of them moves. In addition, an example of a reticle stage drive train 112 that includes a planar motor is disclosed, for example, in U.S. Patent No. 6,452,292. However, the reticle stage drive train 112 may include other motors (eg, linear motors) in addition to or in place of the planar motor.

The reticle stage 11 is movable on the reticle stage stage 113. An opening 113a having a predetermined shape penetrating the reticle stage stage plate 113 in the Z-axis direction is formed in the reticle stage stage plate 113. The opening 113a serves as a path for the exposure light EL.

As shown in Fig. 2(a), the reticle 111 is composed of a rectangular (square in the example shown in Fig. 2(a)) glass plate. A rectangular pattern region 111PA whose longitudinal direction coincides with the Y-axis direction is formed at a central portion of the -Z side surface of the reticle 111. An exposure pattern for projecting (i.e., transferring) the wafer 141 held by the wafer stage 14 is formed in the pattern area 111PA. Hereinafter, the -Z side surface of the reticle 111 for forming the pattern region 111PA is referred to as a "pattern surface".

On the pattern surface, the reticle alignment mark 111RA is formed adjacent to each of the +X side end portion and the -X side end portion of the pattern region 111PA by sandwiching one of the pattern regions 111PA in the Y-axis direction. That is, four reticle marks are formed on the pattern surface. The four reticle alignment marks 111RA are formed by the electron beam exposure device and the exposure pattern formed in the pattern area 111PA. The case was formed at the same time. For simplification of the description, the formation error of the exposure pattern formed in the pattern region 111PA and the electron beam exposure device forming the reticle alignment mark 111RA is set to zero (or as small as visible to zero).

The reticle stage 11 is composed of a rectangular plate member whose longitudinal direction coincides with the Y-axis direction. On the upper surface of the plate member constituting the reticle stage 11, a rectangle having a size larger than the Y-axis direction of the reticle 111 and a size larger than the X-axis direction of the reticle 111 is formed in the Y-axis direction. The recess 114. In the central portion of the concave portion 114 in the X-axis direction, the opening 114a penetrating the reticle stage 11 in the Z-axis direction is formed in the entire Y-axis direction of the concave portion 114.

The reticle 111 is disposed in the vicinity of the -Y side end portion in the concave portion 114 such that the pattern region 111PA is located inside the opening 114a. The reticle 111 is vacuum-adsorbed to the reticle stage 11 through the adsorption portion formed on the upper portion of the concave portion 114 along the X-axis direction (hereinafter, the step portion is referred to as "slider 114SL"). .

A reticle reference plate 115 extending in the X-axis direction is disposed in the vicinity of the +Y side end portion of the concave portion 114. The reticle reference plate 115 is disposed at a predetermined interval from the reticle 111 along the Y-axis direction. The reticle reference plate 115 is vacuum-adsorbed to the reticle stage 11 through the adsorption portion formed on the upper surface of the slider 114SL at both ends of the concave portion 114 along the X-axis direction. The reticle reference plate 115 is composed of a glass having a low thermal expansion rate (for example, Zerodur of SCHOTT Co., Ltd.) or the like. Below the reticle reference plate 115 (i.e., the surface on the -Z side), a pair of reference marks 115FA are arranged along the X-axis direction. The interval between the pair of reference marks 115FA in the X-axis direction is the same as the interval between the reticle alignment marks 111RA in the X-axis direction. The fiducial mark 115FA is the same mark as the reticle alignment mark 111RA. In a state where the reticle 111 is held by the reticle stage 11, the position of the reference mark 115FA in the X-axis direction is the same as the position of the reticle alignment mark 111RA in the X-axis direction. On the marking line Further, a lower surface of the sheet reference plate 115 is formed with a mark region 115MA sandwiched by a pair of reference marks 115FA along the X-axis direction. Various marks (for example, a plurality of AIS (Aerial Imaging Sensor) marks each including various measurement marks for spatial image measurement) are formed in the mark area 115MA.

Returning again to Fig. 1, the position of the reticle stage 11 in the XY plane (however, it may also include the angle of rotation along the θ Z direction) is transmitted through the moving mirror 16a disposed on the reticle stage 11 to be marked. The slice laser interferometer 116 can be measured over time with a decomposition of, for example, 0.25 nm. The measurement results of the reticle laser interferometer 116 are output to the main control unit 16. The main control unit 16 can also control the movement pattern of the reticle stage 11 based on the measurement results of the reticle laser interferometer 116.

Further, the amount of time variation of the pattern region 111PA formed in the reticle 111 is measured by a plurality of spot measuring devices 15 disposed in the reticle stage fixed plate 113. In the example shown in Fig. 2(a), the five spot measuring devices 15 are arranged to be arranged along the X-axis direction. In the following, in order to distinguish the five spot measuring devices 15 from each other, the five spot measuring devices 15 are sequentially referred to as the spot measuring device 15L2, the spot measuring device 15L1, the spot measuring device 15C, the spot measuring device 15R1, and the spot from the -X side. Measuring device 15R2. However, the five spot measuring devices 15 have the same configuration except that the arrangement positions are different from each other. Further, the features of the spot measuring device 15 will be described in detail later (refer to FIG. 3).

The illumination system 12 emits the exposure light EL. The exposure light EL emitted from the illumination system 12 is irradiated to the slit-shaped illumination region IR which is elongated in the X-axis direction. The exposure light EL from the illumination system 11 is irradiated to a portion of the reticle 111 disposed in the illumination region IR. Exposure light EL is ArF excimer laser light (wavelength 193 nm).

The projection optical system 13 will take the exposure light EL from the reticle 111 (ie, shape The image of the exposure pattern in the pattern area 111PA of the reticle 111 is projected onto the wafer 141. Specifically, the projection optical system 13 projects the exposure light EL onto the slit-shaped projection region PR. The projection optical system 13 projects an image of the exposure pattern onto a portion (for example, at least a portion of the irradiation region) of the wafer 141 disposed in the projection region PR.

The projection optical system 13 is a reduction system. For example, the projection magnification of the projection optical system may be 1/4, 1/5, 1/8, or other values.

The projection optical system 13 includes a plurality of refractive optical elements (i.e., lens elements) arranged along an optical axis AX parallel to the Z-axis direction, but does not include a refractive system of reflective optical elements (for example, mirrors). One of the plurality of refractive optical elements constituting the projection optical system 13 on the object surface side (that is, on the side of the reticle 111) may be driven by a driving element (for example, a piezoelectric element) not shown. . In this case, a part of the refracting optical element may be driven to move in the Z-axis direction or may be driven to move in the θ X direction and the θ Y direction. The drive element (not shown) operates under the control of the imaging characteristic correction controller 131 in accordance with the instruction operation from the main control unit 16. The imaging characteristic correction controller 131 can adjust the imaging characteristics of the projection optical system 13 by individually controlling the driving form of a part of the refractive optical elements (for example, magnification, distortion, astigmatism, coma aberration, image plane). Bend, etc.). However, the imaging characteristic correction controller 131 may adjust the imaging characteristics of the projection optical system 13 in other ways, in addition to or instead of driving a part of the refractive optical elements.

The wafer stage 14 can hold the wafer 141. The wafer stage 14 can release the held wafer 141.

The wafer stage 14 can be moved along a plane (for example, an XY plane) including the projection area PR while the wafer 141 is held. Wafer stage 14 can be on wafer stage plate 143 mobile. The wafer stage 14 is movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θ X direction, the θ Y direction, and the θ Z direction. For example, wafer stage 14 can also be moved by the action of wafer stage drive system 142 including a planar motor. In addition, an example of a wafer stage drive system 142 including a planar motor is disclosed, for example, in U.S. Patent No. 6,452,292. However, the wafer stage drive system 142 may include other motors (eg, linear motors) in addition to or in place of the planar motor.

The wafer stage 14 is positioned in the XY plane (however, it may also include a rotation angle along at least one of the θ X direction, the θ Y direction, and the θ Z direction), and is transmitted through the moving mirror disposed on the wafer stage 14 146a is measured by the wafer laser interferometer 146 at a rate of, for example, 0.25 nm. The measurement results of the wafer laser interferometer 146 are output to the main control unit 16. The main control unit 16 can also control the movement pattern of the wafer stage 14 based on the measurement results of the wafer laser interferometer 146. However, the position of the wafer stage 14 in the XY plane, in addition to or in place of the wafer laser interferometer 146, may also be measured by an encoder.

The position of the wafer stage 14 in the Z-axis direction is measured by a focus sensor (not shown) which is constituted by a multi-point focus position detecting system of oblique incidence as disclosed in the specification of U.S. Patent No. 5,448,332. The measurement results of the focus sensor are also output to the main control unit 16.

A reference plate 144 having a surface having the same height as the surface of the wafer 141 is fixed to the wafer stage 14. On the surface of the reference plate 144, a first reference mark used for baseline measurement or the like of the wafer alignment detecting system 149 to be described later, and a pair of second reference marks detected by the reticle alignment detecting system 119 to be described later are formed.

A crystal for detecting a first reference mark (or a wafer alignment mark formed on the wafer 141) of the reference plate 144 formed on the wafer stage 14 is disposed on a side surface of the projection optical system 13 The circle is aligned with the detection system 149. As the wafer alignment detecting system 149, FIA (Field Image) is performed by performing image processing on the image of the first reference mark obtained by irradiating the first reference mark with a wide-band light such as a halogen lamp to measure the position of the first reference mark. Alignment).

A pair of reticle alignment marks 111RA which are aligned along the X-axis direction (that is, the same position in the Y-axis direction) are simultaneously disposed above the reticle stage 11 to detect alignment of the reticle alignment Line 119. Each of the reticle alignment detection systems 119 performs image processing on the image of the reticle alignment mark 111RA taken by the photographic element such as a CCD to measure the position of the reticle alignment mark 111RA (Visual Reticle Alignment). )system. Each of the reticle alignment detecting systems 119 includes an epi-illumination system that irradiates illumination light having the same wavelength as the exposure light EL to the reticle alignment mark 111RA, and a detection system for photographing the reticle alignment mark 111RA. The photographing result of the detection system is output to the main control device 16.

Each of the reticle alignment detecting systems 119 includes a mirror that is detachable from the optical path of the exposure light EL. After the mirror is inserted into the optical path of the exposure light EL, the illumination light emitted from the epi-illumination system is guided to the reticle 111, and the reticle 111 is passed through the projection optical system 13 and the wafer stage 14 (for example, a reference plate). 144) The detection light guide of the path of the projection optical system 13 and the reticle 111 to the detection system. Further, the mirror is retracted to the outside of the optical path of the exposure light EL before the irradiation of the exposure light EL is started to transfer the image of the exposure pattern to the wafer 141.

(1-2) Composition of the spot measuring device 15

Next, an example of the configuration of the spot measuring device 15 will be described with reference to FIGS. 2(a) and 2(b) and FIGS. 3(a) to 3(c). Fig. 3(a) is a block diagram showing an example of the configuration of the spot measuring device 15. Fig. 3(b) is a cross-sectional view showing the optical member 152 provided in the spot measuring device 15. FIG. 3(c) is a plan view showing the optical member 152 provided in the spot measuring device 15.

As shown in FIG. 2(a), the five spot measuring devices 15 are arranged to be separated from each other along the X-axis direction. Each of the spot measuring devices 15L2 and 15R2 located at both ends in the X-axis direction is disposed at a position that can overlap with the reticle alignment mark 111RA arranged in the Y-axis direction in the Z-axis direction. As shown in FIG. 2(b), the five spot measuring devices 15 are disposed at positions shifted by a predetermined amount from the optical axis AX along the Y-axis direction. The five spot measuring devices 15 are not disposed in the opening 113a of the reticle stage fixed plate 113. The five spot measuring devices 15 are disposed outside the optical path of the exposure light EL.

The spot measuring device 15 irradiates the measurement target with the measurement light LB2, and acquires a light spot generated by the irradiation of the measurement light LB2. The measurement target may also include at least a portion of the reticle 111. The measurement target may also include at least a portion of the pattern surface of the reticle 111. The measurement target may also include at least a portion of any face other than the pattern surface of the reticle 111 (for example, a face or a side opposite to the pattern face). The measurement target may also include at least a portion of the pattern area 111PA. The measurement target may also include at least a portion of the reticle reference plate 115.

The light spot is a light and dark pattern generated by the measurement light LB2 of the measurement target scattering or reflection interfering with each other. Further, the light and dark pattern can correspond to the change in the irradiation position of the measurement light LB2. For example, the light and dark pattern may have a speckled bright and dark pattern, and there may be a pattern of a grid or a line of light and dark. In any case, the light and dark pattern may be referred to as a light spot as long as it is a light and dark pattern generated by the measurement light LB2 which is scattered or reflected by the measurement target.

The spot measuring device 15 illuminates the measurement light LB2 toward a region shifted in the Y-axis direction with respect to the optical axis AX of the projection optical system 13. The spot measuring device 15 illuminates the measurement light LB2 to the outside of the optical path of the exposure light EL in the measurement target. Thereafter, the region irradiated with the measurement light LB2 is referred to as a "measurement target region".

As shown in FIG. 3(a), the spot measuring device 15 includes a light source 151, an optical member 152, a collecting lens 153, a projection lens 154, a pinhole plate 155, and a light receiving element 156. The light source 151, the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 are housed in the casing 158.

The light source 151 emits the reference light LB1 toward the optical member 152. The light source 151 emits the reference light LB1 toward the optically rough surface 152a of the optical member 152. The reference light LB1 is dimmed. An example of the reference light LB1 is laser light.

The optical member 152 is a member having a disk shape in plan view (see FIG. 3(c)). The optical member 152 is a member that generates a plurality of measurement lights LB2 from the reference light LB1 emitted from the light source 151. The plurality of measurement lights LB2 are transmitted to the measurement target through the condenser lens 153 and an opening (not shown) formed in the casing 158.

The optical member 152 is a member that generates a plurality of measurement lights LB2 that are different from each other with respect to the measurement target (or at least a part of the measurement target). The optical member 152 is a member that generates a plurality of measurement lights LB2 different from each other in the exit angle of the optical member 152. The optical member 152 is a member that causes the reference light LB1 to be spotted. The optical member 152 is a member that generates a plurality of measurement lights LB2 that are spotted. For example, in the example shown in FIG. 3( a ), the optical member 152 generates the measurement light LB2 ( 1 ) in which the incident angle with respect to the measurement target becomes the first angle, and the measurement light in which the incident angle with respect to the measurement target becomes the second angle. LB2 (2), the measurement light LB2 (3) whose incident angle with respect to the measurement target is the third angle, and the measurement light LB2 (4) which becomes the fourth angle with respect to the incident angle of the measurement target. However, the optical member 152 can also generate any number of measurement lights LB2 that are different from each other with respect to the incident angle of the measurement target.

In order to generate the plurality of measurement lights LB2 described above, the optical member 152 is provided with a reference The optical rough surface 152a reflected by the light LB1. The optical rough surface 152a generates a plurality of surfaces of the measurement light LB2 by reflecting (for example, diffuse reflection or disordered reflection) of the reference light LB1. The optical rough surface 152a reflects the reference light LB1 as a surface of the plurality of measurement lights LB2.

As shown in FIG. 3(b), a convex portion pattern 152b and a concave portion pattern 152c having different heights or forming a step are formed on the optical rough surface 152a. The convex portion pattern 152b is a pattern that protrudes toward the outside of the optical member 152 (upper side in FIG. 3(b)) than the periphery of the convex portion pattern 152b. The recess pattern 152c is a pattern recessed toward the inside of the optical member 152 (the lower side in FIG. 3(b)) than the periphery of the recess pattern 152c. Further, the periphery of the convex portion pattern 152b is recessed compared with the convex portion pattern 152b, so that it can be said to be the concave portion pattern 152c. Similarly, since the periphery of the recess pattern 152c protrudes from the recess pattern 152c, it can be said that it is the convex pattern 152b. That is, the difference between the convex portion pattern 152b and the concave portion pattern 152c can be said to be a relative difference.

The size of the convex portion pattern 152b based on the circumference of the convex portion pattern 152b (in the example shown in FIG. 3(b), substantially height) h1 enables irradiation to the optical thickness formed in the convex portion pattern 152b. The degree of spotting of the reference light LB1 of the surface 152a. The size h1 of the convex portion pattern 152b based on the circumference of the convex portion pattern 152b is larger than the wavelength of the reference light LB1.

The size of the concave portion pattern 152c based on the circumference of the concave portion pattern 152c (the size in the Z-axis direction shown in FIG. 3(b) is substantially the height) h2 can be irradiated to form the concave portion pattern 152c. The degree of spotting of the reference light LB1 of the optical rough surface 152a. The size h2 of the concave portion pattern 152c based on the circumference of the concave portion pattern 152c is larger than the wavelength of the reference light LB1.

The reflectance of the optically rough surface 152a to the reference light LB1 is greater than a predetermined amount (for example, 50%, 60%, 70%, 80%, 90%, 100%). The reflectance of the optically rough surface 152a is capable of reflecting the reference light LB1 by a reflectance of a desired amount or more. In order to make the reflectance greater than the total amount, the optical coarse The face 152a may also be a face made of a predetermined metal or alloy (for example, aluminum or the like). The optically rough surface 152a may also be a surface covered with a predetermined metal or alloy.

As shown in FIG. 3(c), the planar pattern shape of the convex portion pattern 152b (in the example shown in FIG. 3(c), the pattern shape viewed from the direction opposite to the optical rough surface 152a) can be irradiated to The reference light LB1 formed on the optical rough surface 152a of the convex portion pattern 152b is spot-shaped. The top view pattern shape of the convex portion pattern 152b is not periodic or regular. The top view pattern shape of the convex portion pattern 152b is non-periodic, irregular, or random. The planar pattern shape of the convex portion pattern 152b is different from the exposure pattern formed in the pattern region 111PA of the reticle 111. However, in the case where the exposure pattern formed in the pattern region 111PA of the reticle 111 is non-periodic, irregular, or random, at least a part of the planar pattern shape of the convex portion pattern 152b may be the same as the exposure pattern.

The plan view shape of the recess pattern 152c is such that the reference light LB1 formed on the optical rough surface 152a of the recess pattern 152c is spotted. The top view pattern shape of the recess pattern 152c is not periodic or regular. The top view pattern shape of the recess pattern 152c is non-periodic, irregular, or random. The plan view shape of the recess pattern 152c is different from the exposure pattern formed in the pattern area 111PA of the reticle 111. However, in the case where the exposure pattern formed in the pattern region 111PA of the reticle 111 is non-periodic, irregular, or random, at least a part of the planar pattern shape of the recess pattern 152c may be the same as the exposure pattern.

The condensing lens 153 guides a plurality of measurement lights LB2 generated by the optical member 152 to a lens of a measurement target. The condensing lens 153 is a lens that guides the plurality of measurement lights LB2 generated by the optical member 152 to the measurement target region. As a result, the plurality of measurement lights LB2 are irradiated to the measurement target (or the measurement target region including at least a part of the measurement target) in a state where the incident angles are different from each other.

The projection lens 154 is a lens that projects the interference light (that is, the interference light that exhibits the above-described light and dark pattern) LB3 generated by the measurement light LB2 reflected or scattered by the measurement target to a region including the pinhole 155a of the pinhole plate 155.

The pinhole plate 155 is a plate-like member having a pinhole 155a. The center of the pinhole 155a coincides with the optical axis of the condensing lens 154 (that is, the optical axis of the spot light receiving optical system constituted by the condensing lens 154, the pinhole plate 155, and the light receiving element 156) AX2. The interference light LB3 passing through the pinhole 155a reaches the light receiving element 156.

The light receiving element 156 detects the interference light LB3 that has passed through the pinhole 155a. As a result, the light receiving element 156 detects a light and dark pattern (that is, a light spot) which the interference light LB3 exhibits. The light receiving element 156 may include a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) sensor.

The detection result of the light receiving element 156 is output to the main control unit 16. As a result, the main control unit 16 acquires the spot information indicating the characteristics of the light and dark pattern (i.e., the spot) generated by the interference of the measurement light LB2 reflected or scattered by the measurement target. The main control unit 16 measures the amount of change over time of the measurement target by analyzing the spot information. For example, in the case where the measurement target includes at least a portion of the pattern area 111PA formed on the reticle 111, the main control device 16 can measure the amount of change over time of the pattern area 111PA. Further, a method of obtaining the spot information based on the detection result of the light receiving element 156 is disclosed in, for example, the specification of the US Patent Application Publication No. 2004/0218181.

The optical axis AX2 of the spot light receiving optical system including the collecting lens 154, the pinhole plate 155, and the light receiving element 156 does not coincide with the optical axis AX1 of the spot illumination optical system including the light source 151, the optical element 152, and the collecting lens 153. Spot light receiving optical system AX2 and spot illumination The optical axis AX1 of the optical system is different. The optical axis AX2 of the spot light receiving optical system intersects with the optical axis AX1 of the spot illumination optical system.

Both the spot light receiving optics and the spot illumination optics are located below the reticle 111 (or below the pattern surface of the reticle 111). That is, both the spot light receiving optical system and the spot illumination optical system are located on the -Z side of the reticle 111.

Further, the spot light receiving optical system including the collecting lens 154, the pinhole plate 155, and the light receiving element 156 can be said to be a telecentric optical system. Therefore, the spot measuring device 15 is not sensitive to variations in the gap between the measurement target and the spot measuring device 15 (for example, the gap between the upper surface of the stage platen 113 and the pattern surface of the reticle 111). That is, the noise caused by the change in the gap between the measurement target and the spot measuring device 15 is less likely to overlap the detection result of the spot measuring device 15. Further, since the spot light receiving optical system is provided with the pinhole plate 155, the detection size of the spot depends on the size of the pinhole plate 155, but hardly depends on the parameters of the collecting lens 154.

The five spot measuring devices 15 are arranged to be separated from each other along the X-axis direction so as to illuminate the measurement target regions LB2 different from each other. Therefore, the five measurement target areas in which the five spot measuring devices 15 respectively illuminate the measurement light LB2 are located at the measurement target. The five measurement target areas are also separated from each other along the X-axis direction.

In addition, in FIG. 3, for convenience of description, the configuration of the spot measuring device 15 will be described using an XYZ orthogonal coordinate system. However, FIG. 3 does not limit the arrangement of the light source 151, the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 constituting the spot measuring device 15 to the configuration shown in FIG. The intention of form. Therefore, at least one of the light source 151, the optical member 152, the condensing lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 can be arranged in an arrangement different from that shown in FIG.

(1-3) Measurement operation using the spot measuring device 15

Next, a measurement operation using the temporal variation amount of the pattern region 111PA of the spot measuring device 15 will be described with reference to Figs. 4 to 8 .

First, at the timing when a certain reticle 111 is used first, the main control device 16 performs a first spot acquisition operation (initial spot acquisition operation). The timing at which the reticle 111 is first used includes, for example, the timing at which the reticle 111 is first held at the reticle stage 11.

The main control device 16 performs the first spot acquisition operation on at least a part of the period in which the exposure light EL is not irradiated to the reticle 111. The main control device 16 performs the first spot acquisition operation on at least a part of the period before the reticle 111 is held by the reticle stage 11 and the exposure light EL is first irradiated. The main control device 16 performs the first spot acquisition operation on at least a part of the period in which the reticle 111 is not heated by the exposure light EL. The main control device 16 performs the first spot acquisition operation on at least a part of the period in which the reticle 111 is not thermally deformed by the irradiation of the exposure light EL (or only a slight amount of thermal deformation which is considered to be substantially not thermally deformed).

In the first spot obtaining operation, each spot measuring device 15 irradiates the measurement target region with the measurement light LB2 under the control of the main control device 16. In the case where the amount of time variation of the pattern region 111PA is measured, the measurement target region becomes at least one of at least a portion including the pattern region 111PA and at least a portion of the exposure pattern formed along with the movement of the reticle stage 11. The area of the person. As a result of the irradiation of the light LB2, each of the spot measuring devices 15 detects the interference light LB3 generated by the interference of the measurement light LB2 scattered or reflected in the measurement target region. As a result, the main control unit 16 can acquire the spot information of the measurement target area. This spot information is stored in the memory 17 as the spot information in the first state (initial state).

For example, as shown in FIG. 4(a), the reticle stage 11 is arranged along the Y-axis direction (scan) The first spot acquisition operation is performed while moving in the drawing direction. In this case, the measurement target region SAR2 of the spot measurement device 15R2 moves in a predetermined region AR2 including at least a part of each of the pattern region 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. In other words, the spot measurement device 15R2 acquires the interference light LB3 from a partial region portion of the predetermined region AR2 that coincides with the measurement target region SAR2 at the time when the light source 151 emits the reference light LB1. The measurement target region SAR1 of the spot measurement device 15R1 moves in a predetermined region AR1 including at least a part of each of the pattern region 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. In other words, the spot measurement device 15R1 acquires the interference light LB3 from a partial region portion of the predetermined region AR1 that coincides with the measurement target region SAR1 at the time when the light source 151 emits the reference light LB1. The measurement target area SAC of the spot measurement device 15C moves in a predetermined area AC including at least a part of each of the pattern area 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. In other words, the spot measurement device 15C acquires the interference light LB3 from a partial region portion of the predetermined region AC that coincides with the measurement target region SAC at the time when the light source 151 emits the reference light LB1. The measurement target region SAL1 of the speckle measurement device 15L1 moves in a predetermined region AL1 including at least a part of each of the pattern region 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. In other words, the spot measuring device 15L1 acquires the interference light LB3 from a partial region portion of the predetermined region AL1 that coincides with the measurement target region SAL1 at the time when the light source 151 emits the reference light LB1. The measurement target region SAL2 of the spot measurement device 15L2 moves in a predetermined region AL2 including at least a part of each of the pattern region 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. In other words, the spot measuring device 15L2 acquires the interference light LB3 from a partial region portion of the predetermined region AL2 that coincides with the measurement target region SAL2 at the time when the light source 151 emits the reference light LB1. In addition, as can be seen from Fig. 4(a), the measurement target area The SAR 2, the measurement target region SAR1, the measurement target region SAC, the measurement target region SAL1, and the measurement target region SAL2 are separated from each other along the X-axis direction.

As a result, the main control unit 16 acquires the spot information of the five measurement target areas. The spot information, for example, as shown in Fig. 4(C), generates information corresponding to the Y coordinate of the reticle stage 111 (i.e., the position in the Y-axis direction). In Fig. 4(C), for convenience of explanation, the spot information is displayed as a scalar quantity, but the spot information is multi-dimensional information. Since each measurement target area moves in an area including at least a part of each of the pattern area 111PA and the reticle reference plate 115, the spot information includes the spot information Sf0 of the reticle reference plate 115 as shown in FIG. 4(b). The spot information Sp0 with the pattern area 111PA.

Here, as shown in FIG. 4(b), the main controller 16 acquires the spot information based on the detection result of the detection area 156b which is at least a part of the light receiving surface 156a of the light receiving element 156. For example, when the field of view of the entire light receiving surface 156a is 200 μm square, the main control unit 16 can also obtain the spot information based on the detection result of the detection area 156b of a square size of 10 μm.

At this time, the main control device 16 can also adjust at least one of the position and the size of the detection area 156b based on the acquired spot information. For example, the main control unit 16 may change the position of the detection area 156b in the light receiving surface 156a in the case where the acquired spot information is the spot information of the time variation amount of the pattern area 111PA. For example, the main control unit 16 may move (shift) the detection area 156b along the light receiving surface 156a in the case where the acquired spot information is the spot information of the time variation amount of the pattern area 111PA. For example, the main control unit 16 may change the size of the detection area 156b in the case where the acquired spot information is the spot information of the time variation amount of the pattern area 111PA. For example, the main control device 16, in the light obtained The spot information is a case where it is difficult to measure the spot information of the temporal change amount of the pattern area 111PA, and the size of the detection area 156b can also be increased or decreased. Further, as the spot information which is difficult to measure the temporal variation amount of the pattern area 111PA, for example, spot information showing a periodic or regular pattern is exemplified (so-called interference light which is relatively strong in the light receiving element 156 as a regular diffracted light) The spot information obtained in the case of LB3).

A plurality of different detection regions 156b may be disposed on the irradiation surface 156a. A plurality of detection regions 156b at least partially overlapping may be disposed on the irradiation surface 156a. In this case, the main control unit 16 can also obtain the spot information based on the detection results in the plurality of detection areas 156b. However, a single detection area 156b may be provided on the irradiation surface 156a.

Each of the spot measuring devices 15 performs detection of the interference light LB3 generated by the irradiation of the measurement light LB2 and the measurement light LB2 scattered or reflected in the measurement target region in parallel. This means that the period during which the measurement light LB2 is irradiated and the period during which the interference light LB3 is detected (that is, the period during which the spot information is acquired) overlap at least partially. However, strictly speaking, each spot measuring device 15 detects the interference light LB3 from the measurement target region after irradiating the measurement light LB2 to a certain measurement target region. However, the time until the measurement light LB2 is irradiated to a certain measurement target region until the interference light LB3 from the measurement target region is detected is extremely short. Therefore, the irradiation of each of the spot measuring device 15 and the measurement light LB2 substantially simultaneously detects the interference light LB3 generated by the interference of the measurement light LB2 scattered or reflected in the measurement target region with each other. This means that the period during which the measurement light LB2 is irradiated and the period during which the interference light LB3 is detected (that is, the period during which the spot information is acquired) overlap at least partially.

The main control unit 16 acquires the spot information in synchronization with the timing of the measurement result of the position of the reticle stage 11 by the reticle laser interferometer 116. As a result, the spot information is stored in the memory 17 in a form corresponding to the measurement result of the reticle laser interferometer 116. Inside. That is, as described above, the spot information is stored in the memory 17 in a form corresponding to the Y coordinate of the reticle stage 11 (i.e., the position in the Y-axis direction).

The spot information acquired by the first spot obtaining operation is formed by the spot information inherent to the exposure pattern of the reticle 111. Therefore, it is difficult to use only the temporal variation amount of the spot information measurement pattern region 111PA obtained by the first spot obtaining operation. The spot information acquired by the first spot obtaining operation is the spot information of the reference when the time-lapse variation amount of the pattern area 111PA is measured.

The spot information of the measurement target area is information inherent in the measurement target area. Therefore, if the reticle 111 held by the reticle stage 11 is changed, the acquired spot information is also changed. Therefore, the first spot obtaining operation is performed at least once for each of the reticle 111. Therefore, each time the reticle stage 11 holds the new reticle 111, the newly held reticle 111 is subjected to the first spot obtaining operation.

Thereafter, the main control unit 16 uses a pair of reticle alignment detection lines 119 and four reticle alignment marks 111RA and is fixed on the wafer stage just before the first wafer 141 of each batch is exposed. The second reference mark of the reference plate 144 of 14 performs the reticle alignment operation.

Further, at least a part of the period in which the main control device 16 performs the reticle alignment operation, the main control device 16 further acquires the spot information of the measurement target region by performing the second spot obtaining operation similar to the first spot obtaining operation. . That is, the main control device 16 performs the second spot obtaining operation in parallel with the reticle alignment operation. That is, the main control unit 16 performs the reticle alignment operation on at least a part of the period in which the main control unit 16 performs the second spot acquisition operation. That is, the main control device 16 performs the reticle alignment operation in parallel with the second spot acquisition operation. As a result, the acquired spot information is stored in the memory 17 as the spot information of the second state. Inside.

For example, as shown in FIG. 5, the reticle alignment operation is performed on a pair of reticle alignment detecting lines 119 and two reticle alignment marks 111RA and second reference marks arranged along the X-axis direction. The optical axis AX is arranged in a state of being aligned. Even in this case, as shown in FIG. 5, each spot measuring device 15 can be moved in the region including at least a part of each of the pattern region 111PA and the reticle reference plate 115 in association with the movement of the reticle stage 11. The measurement target area illuminates the measurement light LB2. Therefore, the main control unit 16 can acquire the spot information of the measurement target area simultaneously with the alignment operation of the reticle.

The main controller 16 controls the light source 151 so that the reference light LB1 is emitted at the same timing as the timing at which the first spot obtaining operation emits the reference light LB1. The main control device 16 controls each of the spot measurement devices 15 so as to acquire the spot information at the same timing as the timing at which the spot information is acquired by the first spot obtaining operation. The main control device 16 controls each of the spot measurement devices 15 so that the reference light LB1 is irradiated to the same region of the measurement target and the spot information from the same region is acquired in both of the first spot acquisition operation and the second spot acquisition operation.

Thereafter, the main control unit 16 compares the spot information in the second state obtained by the second spot obtaining operation with the spot information in the first state acquired in advance in the first spot obtaining operation. The main control unit 16 measures the pattern area 111PA (hereinafter referred to as the "initial state pattern area 11PA") when the first spot acquisition operation is performed, based on the comparison result between the spot information of the first state and the spot information of the second state. The amount of change in the pattern area PA of the reference.

As an example, the spot information obtained by the main control device 16 based on the detection result of the spot measuring device 15 will be described. Fig. 6(a) shows the spot information of the first state obtained by the first spot obtaining operation. Fig. 6(b) shows the second obtained by the second spot obtaining operation Status spot information. The main control unit 16 measures (i.e., calculates) the difference between the spot information of the first state and the spot information of the second state (in other words, the measurement target region in the X-axis direction and the Y-axis direction with respect to the measurement target region in the initial state). The amount of each change. For example, in FIG. 6(c), the amount of change ΔX in the X-axis direction of the measurement target region based on the measurement target region in the initial state (that is, zero) is displayed in association with the Y coordinate of the measurement target region. (d) of FIG. 6 shows that the amount of change ΔY of the measurement target region in the Y-axis direction with respect to the Y coordinate of the measurement target region is displayed in association with the measurement target region in the initial state (that is, zero).

The main control device 16 can measure the fluctuation amounts ΔX and ΔY of the five measurement target regions based on the detection results of the five spot measurement devices 15. As a result, the main control device 16 can recognize how the pattern region 111PA changes according to the fluctuation amounts ΔX and ΔY of the five measurement target regions. The main control unit 16 measures the two-dimensional deformation of the pattern area 111PA based on the fluctuation amounts ΔX and ΔY of the five measurement target areas.

On the other hand, the mounting position or the mounting state of each spot measuring device 15 may vary with long-term use. When the mounting position or the mounting state of each spot measuring device 15 fluctuates, the output of each spot measuring device 15 varies. Such a deviation causes a measurement error of the above-described fluctuation amounts ΔX and ΔY. Therefore, in order to remove the measurement errors caused by the variations ΔX and ΔY of the deviations of the outputs of the respective spot measuring devices 15, the main control unit 16 uses the spot information of the reticle reference plate 115. Specifically, since the exposure light EL is not irradiated to the reticle reference plate 115, unlike the reticle 111, even after a long period of time after the exposure of the exposure pattern is started, it is not thermally deformed. Therefore, the spot information of the second state of the reticle reference plate 115 should be the same as the spot information of the first state of the reticle reference plate 115. Therefore, the fluctuation amounts ΔX and ΔY of the respective regions of the reticle reference plate 115 (see FIGS. 6(c) and 6(d)) are estimated as the respective spot measuring devices. The amount of variation caused by the deviation of the output of 15. Therefore, the main control unit 16 can remove the fluctuation amounts ΔX and ΔY of the respective regions of the reticle reference plate 115 from the fluctuation amounts ΔX and ΔY of the respective region portions of the pattern region 111PA, and remove the cause. The measurement error of the variation ΔX and ΔY of the deviation of the output of each spot measuring device 15.

For example, in the case where the amount of change ΔY indicated by a broken line is measured in FIG. 7, the variation amount ΔY of the reticle reference plate 115 indicated by a broken line on the left side of FIG. 7 is zero, so that the figure is The amount of change ΔY of the pattern area 111PA indicated by a broken line on the right side of the seventh side is shifted in the Y-axis direction. As a result, the amount of fluctuation ΔY of the pattern region 111PA in which the measurement error due to the deviation of the output of each spot measuring device 15 is removed as indicated by the solid line on the right side of FIG. 7 is obtained. Further, the fluctuation amount ΔX is also the same.

The main control device 16 removes the fluctuation amounts ΔX and ΔY (see FIGS. 8( a ) and 8 ( b )) of the five measurement target regions measured based on the detection results of the five spot measurement devices 15 . The measurement error of the deviation of the output of the spot measuring device 15. Thereafter, the main control unit 16 can determine the positions of the respective regions of the pattern region 111PA based on the four reticle alignment marks 111RA based on the fluctuation amounts ΔX and ΔY from which the measurement error due to the deviation is removed. The shape of the two-dimensional deformation of the pattern area 111PA is measured (that is, calculated). In particular, as described above, each of the spot measuring devices 15L2 and 15R2 is disposed at a position overlapping the pair of reticle alignment marks 111RA in the Z-axis direction. Therefore, the main control unit 16 can acquire the spot information of the reticle alignment mark 111RA based on the detection results of the respective spot measuring devices 15R2 and 15L2. That is, the main control unit 16 can also measure the amount of change in the position of the reticle alignment mark 111RA. Therefore, the main control unit 16 can measure the two-dimensional deformation of the pattern area 111PA based on the position of the four reticle alignment marks 111RA (for example, the amount of variation of each area portion of the pattern area 111PA in the XY plane).

Further, after the reticle alignment operation using the reticle alignment mark 111RA, the position of the reticle 111 is measured by the reticle laser interferometer 116 which measures the position of the reticle stage 11. Further, the installation position of each of the spot measuring devices 15 (or the measurement target region, the region where the measurement light LB2 is irradiated) is known. Therefore, the main control device 16 can recognize the position of the reticle 111 according to the position of the reticle stage 11 (in particular, the position in the Y-axis direction) measured by the reticle laser interferometer 116 (in particular, the Y-axis) The position of the direction) and the measurement target area on the reticle 111. Therefore, the main control device 16 can recognize which of the acquired spot information is the spot information corresponding to the reticle alignment mark 111RA.

Thereafter, in order to expose the wafer 141, the wafer 141 is held by the wafer stage 14. After the wafer 141 is re-held by the wafer stage 14, the main control device 16 uses the wafer alignment inspection system 149 to perform wafer alignment operations for detecting a plurality of wafer alignment marks formed on the wafer 141 (for example, EGA :Enhanced Global Alignment). Further, the wafer alignment operation is disclosed, for example, in U.S. Patent No. 4,780,617 and the like.

Thereafter, under the control of the main control unit 16, an exposure operation of transferring a reduced image of the exposure pattern formed on the reticle 111 to a plurality of irradiation regions on the wafer 141 is performed. When the exposure operation is performed, the main control unit 16 controls the reticle stage driving system 112 and the crystal according to the two-dimensional deformation of the pattern area 111PA measured according to the spot information so that each of the irradiation areas and the exposure pattern are optically overlapped. At least one of the stage drive system 142 and the imaging characteristic correction controller 131. As a result, the main control device 16 can superimpose each of the irradiation regions and the exposure pattern with high precision.

Upon completion of exposure to a certain wafer 141, the exposed wafer 141 is released from the wafer stage 14 and a new wafer 141 is held by the wafer stage 14. After that, by repeated The wafer stage 14 re-holds the operation of the wafer 141. When the exposure of the wafer 141 of a certain batch is completed, the operation is performed immediately before the exposure of the first wafer 141 of each batch (the pattern region 111PA accompanying the reticle alignment operation and the second spot obtaining operation) Measurement of the shape of the two-dimensional deformation).

As described above, according to the exposure apparatus 1 of the first embodiment, the main control unit 16 can measure the two-dimensional deformation of the pattern area 111PA every time the reticle alignment operation is performed. Therefore, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA due to the thermal deformation even if the reticle 111 is thermally deformed by the irradiation of the exposure light EL. For example, the main control unit 16 can measure the amount of variation ΔX and ΔY of the pattern region 111PA resulting from the thermal deformation of the reticle 111 in a direction crossing the optical axis AX.

In the first embodiment, in particular, the main control unit 16 measures the fluctuation amounts ΔX and ΔY of the pattern area 111PA based on the spot information. Therefore, the main control device 16 compares the fluctuation amount ΔX and ΔY of the detection result of the image by the image sensor of the same image processing method as the FIA (Field Image Alignment). The fluctuation amounts ΔX and ΔY of the pattern area 111PA can be measured with high precision. Therefore, even if the two-dimensional deformation of the pattern region 111PA is nonlinearly deformed, the main control device 16 can measure the deformation (that is, substantially display the variation amounts ΔX and ΔY of the deformation).

In the first embodiment, each of the measurement target regions 15 irradiates each of the measurement target regions with a plurality of measurement lights LB2 having different incident angles with respect to the respective measurement target regions. Therefore, the main control unit 16 can preferably obtain the spot information and can preferably measure the fluctuation amounts ΔX and ΔY as compared with the case where the respective measurement target areas are irradiated with the single measurement light LB2.

The technical effect of illuminating a plurality of measurement lights LB2 is formed in the measurement target area The case where the shape of the exposure pattern of the domain is regular (or periodic) is particularly remarkable. As an example of the pattern for regular exposure, for example, an exposure pattern in which a plurality of linear patterns extending in one direction (for example, the X-axis direction) are arranged along the other direction (for example, the Y-axis direction) is exemplified. In the case where the single measurement light LB2 is irradiated to the measurement target region in which the regular exposure pattern is formed, the interference light LB3 generated by the interference of the measurement light LB2 scattered or reflected in the measurement target region can be substantially regarded as regular diffracted light. High probability. Therefore, even in the case where, for example, the shape of the pattern region 111PA is changed, it is possible that the interference light LB3 which is obtained can be observed without substantial change. As a result, even when the shape of the pattern region 111PA changes, the fluctuation amounts ΔX and ΔY (for example, the measurement is zero) may not be measured. In the first embodiment, since the plurality of measurement lights LB2 are irradiated, the interference light LB3 generated by interference between the plurality of measurement lights LB2 scattered or reflected in the measurement target region in which the regular exposure pattern is formed becomes a spot. The possibility of interference with light becomes higher. Therefore, even if the area in which the regular exposure pattern is formed is set in the measurement target area, the main control unit 16 can preferably acquire the spot information and can preferably measure the fluctuation amounts ΔX and ΔY.

Further, in the first embodiment, the optical axis AX2 of the spot light receiving optical system is different from the optical axis AX1 of the spot illumination optical system. Therefore, the interference light LB3 received by the light receiving element 156 does not contain zero-order light. Alternatively, compared with the case where the optical axis AX2 of the spot light receiving optical system and the optical axis AX1 of the spot illumination optical system coincide with each other, the interference light LB3 received by the light receiving element 156 is not easily contained as the measurement light LB2 itself. That is, as the light of the spot, it is not easy to be relatively strong. Therefore, the main control unit 16 can preferably obtain the spot information and can preferably measure the fluctuation amounts ΔX and ΔY.

Furthermore, the main control device 16 is based on the pattern area 111PA as measured as described above. The two-dimensional deformation (for example, the fluctuation amounts ΔX and ΔY) controls at least one of the reticle stage driving system 112, the wafer stage driving system 142, and the imaging characteristic correction controller 131. Therefore, the main control device 16 can hardly or completely not be affected by the deformation even in the case where the pattern region 111PA is deformed in two dimensions, so that the respective irradiation regions on the wafer 141 and the reticle 111 can be The exposure patterns are superimposed with high precision.

The configuration of the speckle measurement device 15 described with reference to FIGS. 1 to 8 and the measurement operation using the speckle measurement device 15 (in particular, the measurement operation of the temporal variation amount of the pattern region 111PA) are taken as an example. Therefore, at least a part of the configuration of the spot measuring device 15 and the measuring operation using the spot measuring device 15 can be appropriately changed. Hereinafter, a modification of at least a part of the configuration of the spot measuring device 15 and the measurement operation using the spot measuring device 15 will be described.

The exposure apparatus 1 may be provided with four or less or six or more spot measuring devices 15. In this case, four or less or six or more spot measuring devices 15 respectively irradiate four or less or six or more measurement target regions of the measurement light LB2 may be located at the measurement target. At least one spot measuring device 15 may also be disposed on the reticle stage stage plate 113. At least one of the spot measuring devices 15 may also be disposed in a structure or structure different from the reticle stage set plate 113.

All of the plurality of spot measuring devices 15 may not be arranged along the X-axis direction. The position of the Y-axis direction of at least a part of the plurality of spot measuring devices 15 may be different from the position of the Y-axis direction of at least another portion of the plurality of spot measuring devices 15. The plurality of spot measuring devices 15 may also be arranged in a direction crossing the Y-axis direction. At least one of the spot measuring devices 15L2 and 15R2 located at both ends along the X-axis direction may be disposed so as not to overlap with the reticle alignment mark 111RA in the Z-axis direction. position. Further, in order to measure the fluctuation amounts ΔX and ΔY of the pattern area 111PA, a plurality of spot measuring devices 15 are arranged to be matched. The movement of the splicing line stage 11 illuminates the position of the measurement light LB2 in the measurement target area that can move in the area including at least a part of each of the pattern area 111PA and the reticle reference plate 115.

At least one of the spot measuring devices 15 may also illuminate the measuring light LB2 in the optical path of the exposure light EL. The measurement target area of at least one of the spot measuring devices 15 may also be located in the optical path of the exposure light EL. The measurement target area of the at least one spot measuring device 15 may also overlap at least a portion of the illumination area IR.

In the case where the measurement target region of the at least one spot measuring device 15 is located in the optical path of the exposure light EL, since the measurement light LB2 is irradiated to the exposure pattern, the main control device 16 can be said to directly measure the position of the exposure pattern itself. In this case, the operation of the reticle stage driving system 112 is controlled such that the respective irradiation regions and the exposure pattern are superimposed with high precision in accordance with the position of the exposure pattern itself, and the reticle is equivalent to the position of the exposure pattern itself. The action of positioning of the stage 11. As a result, the main control device 16 can superimpose each of the irradiation regions and the exposure pattern with high precision using a relatively simple process. Further, in this case, unlike the case where the position of the reticle stage 11 is measured using the encoder system including the read head for the lattice portion, the coordinates of the reticle stage 11 due to the variation of the lattice portion or the like The change of the system has little or no effect on the position measurement of the exposure pattern. This means that the main control device 16 can superimpose each of the irradiation regions and the exposure pattern with higher precision. However, even if each of the irradiation regions and the exposure pattern are superimposed with high precision in accordance with the position of the exposure pattern itself, the main control device 16 can be removed from each other in order to superimpose each of the irradiation regions and the exposure pattern with high precision. The measurement error of the deviation of the spot measuring device 15.

At least one of the spot measuring devices 15 may not include at least one of the collecting lens 153, the projection lens 154, and the pinhole plate 155. At least one spot measuring device 15 is provided with a light source 151. At least a part of the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 may not be housed in the casing 158. At least one of the spot measuring devices 15 may not be provided with the casing 158.

The light source 151 may emit the reference light LB1 that is the measurement light LB2 toward the measurement target, in addition to or instead of emitting the reference light LB1 toward the optical member 152. The light source 151 can emit the reference light LB1 toward either of the optical member 152 and the measurement target in accordance with the exposure pattern included in the measurement target region. For example, in the case where the exposure pattern included in the measurement target region is a regular or periodic pattern (in particular, a regular or periodic pattern arranged along the moving direction of the reticle stage 11), the light source 151 may also be used. The reference light LB1 is emitted toward the optical member 152. For example, in the case where the exposure pattern irregularity or periodic pattern (for example, an irregular, aperiodic or random pattern) included in the measurement target region is used, the light source 151 may also be used as a reference for the measurement light LB2 toward the measurement target. Light LB1.

The optical member 152 may be a member having an arbitrary shape (for example, a plate shape) in a plan view. The optical element 152 includes an optically rough surface 152a that can scatter the reference light LB1 in addition to or instead of the reflected reference light LB1. The optical rough surface 152a may be a surface that generates a plurality of measurement lights LB2 by scattering the reference light LB1 in addition to or instead of the reflection reference light LB1. The optical rough surface 152a may be a surface that reflects or scatters the reference light LB1 as a plurality of measurement lights LB2. In this case, when the optical rough surface 152a is caused to scatter the reference light LB1 to generate a plurality of measurement lights LB2, the reflectance of the optical rough surface 152a may be smaller than the light amount.

The size h1 of the convex portion pattern 152b formed on the optical rough surface 152a may be the same as the wavelength of the reference light LB1. The size h1 of the convex portion pattern 152b may also be smaller than the wavelength of the reference light LB1. The size h2 of the recess pattern 152c formed on the optical rough surface 152a may be the same as the reference light LB1 The wavelength is the same. The size h2 of the recess pattern 152c may also be smaller than the wavelength of the reference light LB1.

At least a part of the measurement target area of one of the plurality of spot measuring devices 15 may overlap with at least a part of the measurement target area of the other one of the plurality of spot measuring devices 15. For example, at least a part of the measurement target region SAR1 of the spot measurement device 15R1 may overlap at least a part of the measurement target region SAR2 of the spot measurement device 15R2.

The main control unit 16 can also change the beam diameter of the reference light LB1 emitted from the light source 151. The main control unit 16 can also change the beam diameter of the reference light LB1 emitted from the light source 151 based on the acquired spot information. For example, the main control device 16 may change the beam diameter of the reference light LB1 (for example, may be enlarged or reduced) in the case where the acquired spot information is the spot information of the time variation amount of the pattern region 111PA. After the beam diameter of the reference light LB1 is changed, the size of the region to be measured, which is the region where the reference light LB1 is irradiated, is also changed. For example, when the beam diameter of the reference light LB1 is increased, the size of the measurement target region which is the region where the reference light LB1 is irradiated is also increased. As a result, the main control unit 16 can easily acquire the spot information which is relatively easy to measure the amount of change over time in the pattern area 111PA.

The at least one spot measuring device 15 may not illuminate the measurement target region with a plurality of measurement lights LB2. At least one of the spot measuring devices 15 may not include the optical member 152 and the collecting lens 153. In this case, at least one of the spot measuring devices 15 may illuminate the measurement target region with the reference light LB1 emitted from the light source 151 as the measurement light LB2.

The main control device 16 may perform the first spot acquisition operation on at least a part of the period in which the reticle stage 11 is not moved. The main control unit 16 may perform the first spot acquisition operation on at least a part of the period in which the reticle stage 11 is stopped. In this case, the main control unit 16 may perform the first spot acquisition operation for each of the plurality of timings at which the reticle stage 11 is stopped at different positions. In other words, the main control unit 16 can perform the first spot obtaining operation for each of a plurality of areas intermittently distributed on the measurement target along the moving direction of the reticle stage 11. As a result, the main control unit 16 can obtain the spot information corresponding to the Y coordinate of the reticle stage 11 as in the case where at least a part of the movement of the reticle stage 11 is performed in the first spot obtaining operation. Further, the amount of information of the spot information stored in the memory 17 can be reduced as compared with the case where at least a part of the moving period of the reticle stage 11 is performed by the first spot obtaining operation. In other words, the information amount of the spot information stored in the memory 17 can be reduced as compared with the case where the first spot obtaining operation is performed on a series of areas continuously distributed on the measurement target along the moving direction of the reticle stage 11. . The same applies to the second spot acquisition operation.

The main control device 16 may perform the second spot acquisition operation on at least a part of other periods different from the reticle alignment operation. As a result, the main control device 16 can simultaneously perform the second spot obtaining operation without performing the alignment operation with the reticle. Therefore, the yield of the exposure device 1 is increased depending on the situation.

For example, the main control device 16 may perform the second spot obtaining operation on at least a part of the period in which the exposure light EL is not irradiated to the reticle 111. The main control device 16 may perform the second spot acquisition operation on at least a part of the period in which the exposure pattern is not transferred to the wafer 141. The main control device 16 may perform the second spot acquisition operation on at least a part of the period during which the wafer 141 held by the wafer stage 14 is replaced. The main control device 16 may perform the second spot obtaining operation on at least a part of the period in which the exposure device 1 is measured (for example, the transmittance of the exposure light EL or the power of the exposure light EL). The main control unit 16 may perform the second spot on at least a part of the measurement stage (not shown) provided in the exposure apparatus 1 instead of the wafer stage 14 located below the projection optical system 13 (that is, on the optical axis AX). Get the action. As a result, the main control unit 16 is almost or completely The spot information can be obtained without affecting the transfer of the exposure pattern of the wafer 141.

For example, the main control device 16 may perform the second spot acquisition operation on at least a part of the period during which the reticle 111 is irradiated with the exposure light EL. The main control device 16 may perform the second spot acquisition operation on at least a part of the period during which the exposure pattern is transferred to the wafer 141. That is, the main control device 16 can also measure the fluctuation amounts ΔX and ΔY of the pattern region 111PA in parallel with the exposure of the exposure pattern. As a result, the main control device 16 can acquire the spot information at a higher frequency and can measure the fluctuation amounts ΔX and ΔY at a higher frequency. Therefore, the main control device 16 can superimpose each of the irradiation regions on the wafer 141 with the exposure pattern on the reticle 111 with higher precision.

However, in the case where the second spot obtaining operation is performed on at least a part of the period in which the exposure light EL is applied to the reticle 111, the second spot obtaining operation is not limited to the case where the reticle stage 11 moves at a constant speed, and It is possible to perform the acceleration and deceleration of the reticle stage 11. The acceleration and deceleration of the reticle stage 11 causes the reticle 111 to be temporarily deformed. Therefore, in this case, the main control device 16 can also temporarily exclude the deformation of the reticle 111 caused by the acceleration and deceleration of the reticle stage 11 by using the spot information of the first state (for example, the pattern area 111PA of the initial state) as a reference. The impact.

When at least a part of the period in which the reticle 111 is irradiated with the exposure light EL is subjected to the second spot obtaining operation, the main control unit 16 may perform the second spot on at least a part of the period in which the reticle stage 11 moves at a constant speed. On the other hand, the second spot obtaining operation may not be performed while the reticle stage 11 is being accelerated or decelerated. As a result, the effect of the temporary deformation of the reticle 111 caused by the acceleration and deceleration of the reticle stage 11 can be preferably removed without the special signal processing by the main control unit 16.

In addition, the measurement target area is located in the optical path of the exposure light EL (ie, When at least a part of the illumination area IR overlaps, the main control unit 16 can easily perform the second spot acquisition operation during the acceleration and deceleration of the reticle stage 11, and during the constant speed movement of the reticle stage 11 At least a part of the second spot acquisition operation is performed.

The main control unit 16 may perform the second spot acquisition operation repeatedly over a period in which the period of the reticle alignment operation is short. As a result, the main control device 16 can acquire the spot information at a higher frequency and can measure the fluctuation amounts ΔX and ΔY at a higher frequency. Therefore, the main control device 16 can superimpose each of the irradiation regions on the wafer 141 with the exposure pattern on the reticle 111 with higher precision.

The main control device 16 measures the two-dimensional deformation (i.e., the amount of variation) of the pattern region 111PA according to the spot information measurement, in addition to the two-dimensional deformation (i.e., the amount of variation ΔX and ΔY) of the pattern region 111PA according to the spot information. ΔX and ΔY), and the amount of fluctuation ΔZ in the Z-axis direction of the pattern region 111PA can also be measured. In this case, for example, as the spot measuring device 15, an image-related displacement meter disclosed in Japanese Laid-Open Patent Publication No. 2006-184091 or the like (specifically, the displacement of the position in the height direction of the measurement target surface is measured by the principle of triangulation. instrument).

In the above description, the main control unit 16 measures the two-dimensional deformation of the pattern area 111PA based on the spot information. However, the invention is not limited to being based on spot information. For example, the main control device 16 may measure the two-dimensionality of the pattern region 111PA based on any information obtained from the measurement light LB2 (ie, the interference light LB3) scattered or reflected at the measurement target in addition to or in place of the spot information. Deformation. For example, the exposure device 1 may be provided with at least one light detecting device in addition to or in place of at least one spot measuring device 15. The light measuring device is a device that can detect the measuring light LB2 (that is, the interference light LB3) reflected by the measuring target. The main control device 16 can be used in addition to comparing the spot information corresponding to the detection result of the spot measuring device 15, or instead of comparing the spot information corresponding to the detection result of the spot measuring device 15, The two-dimensional deformation of the pattern region 111PA (i.e., the amounts of fluctuation ΔX and ΔY) is measured by the detection result of the comparative light measuring device. For example, the main control unit 16 can also align the light detection information in the first state corresponding to the detection result of the light measuring device corresponding to the timing at which the reticle 111 is first used, and the equivalent of aligning the reticle The light detection information of the second state of the detection result of at least a part of the light measuring device during the operation is performed, and the two-dimensional deformation of the pattern region 111PA is measured.

However, the main control device 16 may not measure the two-dimensional deformation of the pattern region 111PA based on any information obtained from the measurement light LB2 (i.e., the interference light LB3) scattered or reflected at the measurement target. That is, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA using any method even in the case where the measurement target LB2 is not irradiated. For example, the exposure device 1 may be provided with at least one pattern measuring device in addition to or in place of at least one spot measuring device 15. The pattern measuring device is a device that can measure the exposure pattern formed in the pattern area 111PA of the reticle 111. As such a pattern measuring device, for example, an image sensor (for example, an image sensor of the image processing method similar to the above-described FIA system) that acquires the image of the pattern area 111PA by the image pattern area 111PA is exemplified. The main control device 16 can compare the detection information corresponding to the detection result of the spot measurement device 15 or the spot information corresponding to the detection result of the spot measurement device 15, and can also compare the detection results corresponding to the pattern measurement device. The pattern information measures the two-dimensional deformation of the pattern area 111PA (that is, the amount of variation ΔX and ΔY). For example, the main control device 16 can also compare the pattern information of the first state corresponding to the detection result of the pattern measuring device corresponding to the timing at which the certain reticle 111 is first used, and the alignment operation corresponding to the reticle. The pattern information of the second state of the detection result of at least a part of the pattern measuring device during the period is measured, and the two-dimensional deformation of the pattern region 111PA is measured.

In the above description, the exposure pattern and formation formed in the pattern region 111PA are formed. The formation error of the electron beam exposure apparatus of the reticle alignment mark 111RA is zero. However, even in the case where the formation error of the electron beam exposure device is not zero, the main control device 16 can measure the formation error of the electron beam exposure device based on the above-described spot information. For example, the main control device 16 performs the same operation as the first spot obtaining operation on the reticle 111 on which the exposure pattern having the error of zero is formed, and uses the acquired spot information as the reference spot information. Stored in memory 17. Further, the main control unit 16 performs the same operation as the above-described first spot obtaining operation on the reticle 111 on which the exposure pattern having the formation error is not zero, and uses the acquired spot information as the measurement error. The spot information of the determination object is stored in the memory 17. Thereafter, the main control unit 16 can measure the formation error corresponding to the difference between the spot information as the reference and the spot information as the determination target of the measurement error.

(1-4) Modifications

Next, various modifications of the exposure apparatus 1 according to the first embodiment will be described with reference to Figs. 9 to 12 . In the following, attention will be paid to the difference between the exposure apparatus 1 of the first embodiment and various modifications. The same components as those of the exposure apparatus 1 of the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted. Further, at least a part of the various constituent elements of the various modifications described below may be combined with each other.

(1-4-1) First Modification

First, an exposure apparatus 1-1 according to a first modification will be described with reference to Fig. 9 . In addition, the exposure apparatus 1-1 of the first modification differs from the exposure apparatus 1 of the first embodiment in that one of the components of the speckle measurement device 15-1 is different from the configuration of the speckle measurement device 15. In the following, the configuration of each of the spot measuring devices 15-1 provided in the exposure apparatus 1-1 of the first modification will be described. Fig. 9 shows each spot measuring device 15-1 provided in the exposure apparatus 1-1 of the first modification. A block diagram of an example of the composition.

As shown in FIG. 9, the spot measuring device 15-1 of the first modification is compared with the spot measuring device 15 of the first embodiment, and includes a plurality of light sources 151 without the optical member 152 and the collecting lens 153. different. In the example shown in FIG. 9, the spot measuring device 15-1 is provided with four light sources 151 (specifically, the light source 151 (1), the light source 151 (2), the light source 151 (3), and the light source 151 (4). The other components of the spot measuring device 15-1 of the first modification may be the same as the other components of the spot measuring device 15 of the first embodiment.

The plurality of light sources 151 respectively emit a plurality of measurement lights LB2 different from each other with respect to the incident angle of the measurement target. For example, the light source 151(1) emits the measurement light LB2(1) which becomes the first angle with respect to the incident angle of the measurement target. For example, the light source 151 ( 2 ) emits the measurement light LB 2 ( 2 ) whose incident angle with respect to the measurement target is the second angle. For example, the light source 151(3) emits the measurement light LB2(3) which becomes the third angle with respect to the incident angle of the measurement target. For example, the light source 151 (4) emits the measurement light LB2 (4) whose fourth angle is the incident angle with respect to the measurement target.

The plurality of light sources 151 respectively emit a plurality of measurement lights LB2 having the same irradiation position on the measurement target. The plurality of light sources 151 respectively emit a plurality of measurement lights LB2 that are irradiated to the same measurement target region. The plurality of light sources 151 respectively emit a plurality of measurement lights LB2 having the same measurement target area. The characteristics of the plurality of measurement lights LB2 emitted by the plurality of light sources 151 are the same except for the incident angle with respect to the measurement target.

Even in the exposure apparatus 1-1 of the first modification, various effects achieved by the exposure apparatus 1 of the first embodiment can be achieved. For example, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA, and the exposure pattern on the wafer 141 and the exposure pattern on the reticle 111 can be accurately and almost completely affected by the deformation. overlapping.

Further, the spot measuring device 15-1 may have three or less or five or more light sources 151. At least a part of the plurality of measurement lights LB2 emitted from the plurality of light sources 151 may be reflected by the optical member 152 of the first embodiment and then irradiated to the measurement target. At least one of the spot measuring devices 15-1 may include one or a plurality of first light sources 151 that directly illuminate the measurement target LB2 with the measurement target, and one or a plurality of second light that irradiates the optical member 152 of the first embodiment with the reference light LB1. Light source 151. At least a part of the characteristics of the plurality of measurement lights LB2 emitted from the plurality of light sources 151 may be different.

(1-4-2) Second Modification

Next, an exposure apparatus 1-2 according to a second modification will be described with reference to Fig. 10 . Further, in the exposure apparatus 1-2 according to the second modification, a part of the configuration of each of the spot measurement apparatuses 15-2 is different from the configuration of the above-described spot measurement apparatus 15 as compared with the exposure apparatus 1 of the first embodiment. In the following, the configuration of each of the spot measuring devices 15-2 provided in the exposure apparatus 1-2 according to the second modification will be described. FIG. 10 is a block diagram showing an example of the configuration of each of the spot measuring devices 15-2 included in the exposure apparatus 1-2 according to the second modification.

As shown in FIG. 10, the spot measuring device 15-2 of the second modification is provided with the optical branching member 157-2 without the optical member 152 and the collecting lens 153 as compared with the spot measuring device 15 of the first embodiment. The point is different. The other components of the spot measuring device 15-2 of the second modification may be the same as the other components of the spot measuring device 15 of the first embodiment.

The light branching member 157-2, like the optical member 152, is a member that generates a plurality of measurement lights LB2 that are different from each other with respect to the incident angle of the measurement target. The light branching member 157-2 is the same as the optical member 152, and is a member that generates a plurality of pieces of measurement light LB2 from which the light splitting members 157-2 have different emission angles. The light branching member 157-2 is the same as the optical member 152, A member that causes the reference light LB1 to be spotted. The light branching member 157-2, like the optical member 152, is a member that generates a plurality of measurement lights LB2 that are spotted.

The light branching member 157-2 includes, for example, a half mirror 157-2 (1), a half mirror 157-2 (2), a half mirror 157-2 (3), and a mirror 157-2 (4).

The half mirror 157-2(1) partially transmits one of the reference lights LB1 emitted from the light source 151, and reflects another portion of the reference light LB1 emitted from the light source 151 as the measurement light LB2(1) toward the measurement target. The half mirror 157-2(2) transmits a portion of the reference light LB1 transmitted through the half mirror 157-2(1) and transmits the reference light LB1 transmitted through the half mirror 157-2(1). The other part is reflected as measurement light LB2(2) toward the measurement target. The half mirror 157-2(3) transmits a portion of the reference light LB1 transmitted through the half mirror 157-2(2) and transmits the reference light LB1 transmitted through the half mirror 157-2(2). The other part is reflected as measurement light LB2(3) toward the measurement target. The mirror 157-2 (4) reflects the reference light LB1 transmitted through the half mirror 157-2 (3) as the measurement light LB2 (4) toward the measurement target. In this case, the light branching member 157-2 generates the measurement light LB2(1) whose first angle is the incident angle with respect to the measurement target, and the measurement light LB2(2) whose angle of incidence with respect to the measurement target becomes the second angle, with respect to The measurement angle LB2 (3) at which the incident angle of the measurement target is the third angle, and the measurement light LB2 (4) at which the incident angle with respect to the measurement target becomes the fourth angle.

However, the light branching member 157-2 can also generate any number of measurement lights LB2 that are different from each other with respect to the incident angle of the measurement target. In this case, the light branching member 157-2 may be provided with more half mirrors or the like.

The light branching member 157-2 generates a plurality of measurement lights LB2 having the same irradiation position on the measurement target. The light branching members 157-2 respectively generate a plurality of measurement lights LB2 that are irradiated to the same measurement target region. The light branching member 157-2 respectively generates a plurality of measurements having the same measurement target area Light LB2. The characteristics of the plurality of measurement lights LB2 generated by the light branching member 157-2 are the same except for the incident angle with respect to the measurement target.

Even in the exposure apparatus 1-2 of the second modification described above, various effects achieved by the exposure apparatus 1 of the first embodiment can be achieved. For example, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA, and the exposure pattern on the wafer 141 and the exposure pattern on the reticle 111 can be accurately and almost completely affected by the deformation. overlapping.

Further, the optical branching member 157-2 may have an optical element different from the half mirror and the mirror, in addition to at least one of the half mirror and the mirror, or at least one of the half mirror and the mirror. For example, the light branching member 157-2 may also be provided with a beam splitter.

(1-4-3) Third Modification

Next, an exposure apparatus 1-3 according to a third modification will be described with reference to Fig. 11 . Further, in the exposure apparatus 1-3 according to the third modification, a part of the configuration of each of the spot measurement apparatuses 15-3 is different from the configuration of the above-described spot measurement apparatus 15 as compared with the exposure apparatus 1 of the first embodiment. In the following, the configuration of each of the spot measuring devices 15-3 provided in the exposure apparatus 1-3 according to the third modification will be described. FIG. 11 is a block diagram showing an example of the configuration of each of the spot measuring devices 15-3 included in the exposure apparatus 1-3 according to the third modification.

As shown in FIG. 11, the spot measuring device 15-3 according to the third modification differs from the spot measuring device 15 of the first embodiment in that the arrangement positions of the spot light receiving systems 15-3b are different. In the example shown in Fig. 11, the spot light receiving system 15-3b accommodated in the casing 158-3b is positioned above the reticle 111 (i.e., on the +Z side of the reticle 111). In this case, the casing 158-3b may be fixed to the frame of the exposure device 3-3 or may be fixed to the reticle stage 11. On the other hand, the spot illumination system 15-3a housed in the casing 158-3a is located below the reticle 111 (i.e., the reticle 111 By the -Z side). In this case, the housing 158-3a may also be fixed to the reticle stage table 113. The other components of the spot measuring device 15-3 according to the third modification may be the same as the other components of the spot measuring device 15 of the first embodiment.

Even in the exposure apparatus 1-3 of the third modification, various effects achieved by the exposure apparatus 1 of the first embodiment can be achieved. For example, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA, and the exposure pattern on the wafer 141 and the exposure pattern on the reticle 111 can be accurately and almost completely affected by the deformation. overlapping.

Further, the spot illumination system 15-3a may also be located above the reticle 111. The spot light receiving system 15-3b may also be located below the reticle 111.

At least one of the spot measuring devices 15-3 may also include a plurality of spot light receiving systems 15-3b. In this case, a portion of the plurality of spot receiving light systems 15-3b may also be located above the reticle 111 (ie, on the +Z side of the reticle 111), and the other plurality of spot receiving portions 15-3b may also be Located below the reticle 111 (ie, on the -Z side of the reticle 111).

(1-4-4) Fourth Modification

Next, an exposure apparatus 1-4 according to a fourth modification will be described with reference to Fig. 12 . Further, in the exposure apparatus 1-4 of the fourth modification, a part of the configuration of each of the spot measurement apparatuses 15-4 is different from the configuration of the above-described spot measurement apparatus 15 as compared with the exposure apparatus 1 of the first embodiment. In the following, the configuration of each of the spot measuring devices 15-4 provided in the exposure apparatus 1-4 of the fourth modification will be described. Fig. 12 is a block diagram showing an example of the configuration of each spot measuring device 15-4 provided in the exposure apparatus 1-4 of the fourth modification.

As shown in FIG. 12, the spot measuring device 15-4 of the fourth modification is compared with the spot measuring device 15 of the first embodiment, in the optical member 152, the collecting lens 153, and the projection lens. 154. The pinhole plate 155 and the light receiving element 156 are disposed on the slider 114SL of the reticle stage 11 at a different point. In the example shown in FIG. 12, the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 housed in the casing 158 are disposed between the slider 114SL and the reticle 111. On the slider 114SL. Further, the housing 158 further houses a light guiding member (for example, a mirror) 159 for guiding the reference light LB1 emitted from the light source 151 disposed in the slider holder 113 to the optical member 152. Further, the reticle 111 is vacuum-adsorbed to the slider 114SL (that is, the reticle stage 11) through the adsorption portion 114b formed on the upper surface of the slider 114SL. Other components of the spot measuring device 15-4 of the fourth modification example may be the same as those of the other components of the spot measuring device 15 of the first embodiment.

Even in the exposure apparatus 1-4 of the fourth modification, various effects achieved by the exposure apparatus 1 of the first embodiment can be achieved. For example, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA, and the exposure pattern on the wafer 141 and the exposure pattern on the reticle 111 can be accurately and almost completely affected by the deformation. overlapping.

Further, in the fourth modification, the light source 151 is separated from the components other than the light source 151 (that is, the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156). Therefore, the heat generated by the light source 151 hardly or completely does not affect the constituent elements other than the light source. Therefore, a high output light source 151 can be employed. As a result, the main control device 16 can measure the two-dimensional deformation of the pattern area 111PA with higher precision.

Further, one of the optical member 152, the condensing lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156 may be disposed on the slider 114SL, and on the other hand, the condensing lens 153, the projection lens 154, and the pinhole plate. 155 and another portion of the light receiving element 156 are not disposed on the slider 114SL.

Further, in the fourth modification, the casing 158 is fixed to the slider 114SL and the spot information is obtained from a portion of the pattern formed on the reticle 111. However, it is not particularly limited to this form. For example, the peak value or the contrast height of the detection signal (for example, information from the pattern of the reticle 111 including the spot) may be separately measured for each of the reticle 111, in order to optimize the measurement position of the reticle 111, The position of the reticle stage 11 is adjusted based on the measurement result. Alternatively, the casing 158 may be movable, and the casing 158 may be moved to the optimum position for each of the reticle 111.

(2) Exposure apparatus 2 of the second embodiment

Next, an exposure apparatus 2 according to a second embodiment will be described with reference to Figs. 13 and 14 . Further, the exposure apparatus 2 of the second embodiment differs from the exposure apparatus 1 of the first embodiment in that the respective spot measuring devices 15 are movable. In the following, attention will be paid to the components of the exposure apparatus 2 of the second embodiment for moving the respective spot measuring devices 15. Fig. 13 is a plan view showing the configuration of the periphery of the reticle stage 11 provided in the exposure apparatus 2 of the second embodiment. Fig. 14 is a plan view showing an example of the movement form of the spot measuring device 15. The same components as those of the exposure apparatus 1 of the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

As shown in Fig. 13, the exposure apparatus 2 of the second embodiment differs in the point at which each of the spot measuring devices 15 can move. The other components of the exposure apparatus 2 of the second embodiment may be the same as the other components of the exposure apparatus 1 of the first embodiment.

Each of the spot measuring devices 15 is movable in a direction crossing the moving direction of the reticle stage 11. Each of the spot measuring devices 15 is movable in a direction crossing the Y-axis direction. Each spot measuring device 15 is movable in the X-axis direction. Each spot measuring device 15 is movable along the XY plane. Each spot measuring device 15 can be moved in the order of centimeters or millimeters.

As a result of the movement of each spot measuring device 15, the measurement of each spot measuring device 15 The object area also moves in the moving direction of each spot measuring device 15. That is, the measurement target area can be moved in a direction crossing the moving direction of the reticle stage 11. The measurement target area is movable in a direction crossing the Y-axis direction. The measurement target area can be moved in the X-axis direction. The measurement object area can be moved along the XY plane.

In order to move the respective spot measuring devices 15, the exposure device 2 further includes a plurality of driving mechanisms 25 for moving the plurality of spot measuring devices 15 respectively. For example, in the example shown in Fig. 13, the exposure device 2 further includes a drive mechanism 25R2 for moving the spot measurement device 15R2, a drive mechanism 25R for moving the spot measurement device 15R1, and a drive mechanism 25C for moving the spot measurement device 15C. The drive mechanism 25L1 that moves the measuring device 15L1 and the drive mechanism 25L2 that moves the spot measuring device 15L2. Further, the five drive mechanisms 25 are identical except for the points at which the moving objects are different.

Each drive mechanism 25 includes, for example, any motor (for example, a planar motor or a linear motor). In this case, each of the spot measuring devices 15 moves with the driving force of the motor as a power source. However, each drive mechanism 25 may include any power source that generates or supplies power for movement of each spot measuring device 15 in addition to or in lieu of any motor.

For example, each drive mechanism 25 can also include a pair of electrodes that are configured to oppose each other. In this case, when a voltage is applied to the pair of electrodes, an electrostatic force is generated at the pair of electrodes. As a result, as the power at the time of movement of each spot measuring device 15, an electrostatic force is employed.

For example, each drive mechanism 25 may also include a magnetic pole and a coil disposed within a magnetic field generated by the magnetic pole. In this case, if a current is supplied to the coil, an electromagnetic force is generated in the coil. As a result, for example, an electromagnetic force is used as the power when each spot measurement device 15 moves.

For example, each drive mechanism 25 may also include a piezoelectric element. In this case, if current When supplied to the piezoelectric element, the piezoelectric element is deformed. As a result, as a power for moving the respective spot measuring devices 15, for example, a force due to deformation of the piezoelectric element is employed.

In the above-described manner, the main control unit 16 controls each of the drive mechanisms 25 to move the respective spot measuring devices 15. The main control unit 16 controls the respective drive mechanisms 25 in accordance with the exposure pattern formed in the pattern area 111PA. The main control unit 16 controls the respective drive mechanisms 25 in accordance with the state of the exposure pattern formed in the pattern area 111PA.

For example, the main control unit 16 controls the respective drive mechanisms 25 in accordance with the relative position in the pattern area 111PA in which the partial area portion of the exposure pattern which is actually transferred to the wafer 141 is formed in the pattern area 111PA. Specifically, the main control device 16 controls each of the drive mechanisms 25 such that as many measurement target regions as possible overlap with the exposure pattern actually transferred to the wafer 141. The main control device 16 controls the respective drive mechanisms 25 such that as many of the measurement target regions as possible overlap with the portion of the pattern region 111PA where the partial portion of the exposure pattern actually transferred to the wafer 141 is formed. For example, as shown in FIG. 14(a), in the case where all the exposure patterns formed in the pattern region 111PA are actually transferred to the wafer 141, the main control device 16 may also have five spot measuring devices 15 along the X-axis direction and the like. Each drive mechanism 25 is controlled in a spaced manner. That is, the main control unit 16 may control the respective drive mechanisms 25 such that the five spot measuring devices 15 are arranged substantially uniformly in the pattern area 111PA. On the other hand, for example, as shown in FIG. 14(b), in the case where the exposure pattern formed in one of the partial region portions 111PA-1 in the pattern region 111PA is actually transferred to the wafer 141, the main control device 16 may also be five. Each of the five drive measurement areas of the spot measuring device 15 overlaps with a part of the pattern area 111PA-1 to control each drive mechanism 25.

When the five spot measuring devices 15 move, the measurement target region to which the measurement light LB2 is irradiated also moves. Therefore, whenever the spot measuring device 15 moves, the main control device 16 re-enters The first spot measurement operation is performed.

The main control unit 16 can also obtain position information indicating the position of each of the spot measuring devices 15 (for example, the position along the X-axis direction) based on the control amount of each drive mechanism 25. The position information acquired by the main control unit 16 is stored in the memory 17. After the respective spot measuring devices 15 are moved by controlling the respective drive mechanisms 25, the position information is also updated.

However, the exposure device 2 may be provided with a position sensor that can detect the position of each of the spot measuring devices 15 (for example, the position along the direction in which the respective spot measuring devices 15 move, that is, the X-axis direction). In this case, in the mark region 115MA of the reticle reference plate 115, a plurality of position marks having intrinsic characteristics (for example, shapes or patterns) are formed along the X-axis direction at positions corresponding to the X-axis direction. As a result, the position sensor can detect the position of each spot measuring device 15 based on the position mark formed on the reticle reference plate 115.

Even in the exposure apparatus 2 of the second embodiment described above, various effects achieved by the exposure apparatus 1 of the first embodiment can be achieved. For example, the main control device 16 can measure the two-dimensional deformation of the pattern region 111PA, and the exposure pattern on the wafer 141 and the exposure pattern on the reticle 111 can be accurately and almost completely affected by the deformation. overlapping.

Further, in the second embodiment, the main control unit 16 can control each of the relative positions in the pattern area 111PA of the area portion 111PA-1 in which the exposure pattern is actually transferred to the wafer 141 in the pattern area 111PA. Drive mechanism 25. As a result, the main control device 16 can measure the two-dimensional deformation of the region portion 111PA-1 on which the exposure pattern actually transferred to the wafer 141 is formed with relatively high precision. Therefore, the main control device 16 can accurately overlap each of the irradiation regions on the wafer 141 and the exposure pattern on the reticle 111 (in particular, the exposure pattern actually transferred to the wafer 141). The main control device 16 has an actual turn even in the pattern area 111PA The region 111NA-1 of the exposure pattern printed on the wafer 141 is thermally deformed, and the respective irradiation regions on the wafer 141 and the exposure pattern on the reticle 111 can be accurately overlapped.

Further, the spot measuring device 15 can move the irradiation position of the measurement light LB2 (that is, the measurement target region) in addition to or instead of being movable. For example, the spot measuring device 15 can also dynamically change various components constituting the spot measuring device 15 (that is, the light source 151, the optical member 152, the collecting lens 153, the projection lens 154, the pinhole plate 155, and the light receiving element 156). The measurement target area is moved by at least a part of the arrangement position or arrangement angle or at least a part of various components. Even in this case, various effects that can be achieved in the case where the spot measuring device 15 is movable can be preferably achieved.

In the exposure apparatus 2 of the second embodiment, at least one of the spot measuring devices 15 may not irradiate a plurality of measurement lights LB2 to the measurement target region. At least one of the spot measuring devices 15 may not include the optical member 152 and the collecting lens 153. In this case, at least one of the spot measuring devices 15 may illuminate the measurement target region with the reference light LB1 emitted from the light source 151 as the measurement light LB2.

The main control unit 16 can also control the respective drive mechanisms 25 in accordance with the coarseness of the exposure pattern. Specifically, the main control device 16 may control the respective drive mechanisms 25 so that the number of measurement target regions in the region where the density of the exposure pattern in the pattern region 111PA is relatively high is relatively large. The main control unit 16 may control the respective drive mechanisms 25 so that the number of measurement target areas in the region where the density of the exposure pattern in the pattern area 111PA is relatively low is relatively small. The main control device 16 may also overlap the portion of the region of the region where the density of the exposure pattern in the pattern region 111PA is relatively high, and the portion of the region to be measured which is overlapped with the portion of the region of the pattern region 111PA where the density of the exposure pattern is relatively low. Each drive mechanism 25 is controlled in such a manner that the number of measurement target areas is large. As a result, the main control device 16 can measure the pattern area with relatively high precision. The density of the exposure pattern in the field 111PA is relatively high, and the two-dimensional deformation of the portion of the region which is relatively large due to the transfer of the exposure pattern due to thermal deformation. Therefore, the main control unit 16 can accurately overlap each of the irradiation regions on the wafer 141 and the exposure pattern on the reticle 111 (especially, the exposure pattern having a relatively high density). The main control device 16 can expose the respective irradiation regions on the wafer 141 and the reticle 111 even if the portion of the region of the exposure pattern in which the density is relatively high is formed in the pattern region 111PA. The pattern is superposed with high precision.

The main control unit 16 can also control the respective drive mechanisms 25 in accordance with the influence of the exposure pattern on the thermal deformation of the pattern area 111PA. Specifically, the main control device 16 may control the respective drive mechanisms 25 so as to overlap the number of measurement target regions in the region of the pattern region 111PA where the exposure pattern that is relatively susceptible to thermal deformation is relatively large. The main control device 16 may control the respective drive mechanisms 25 so as to overlap the number of measurement target regions in the region of the pattern region 111PA where the exposure pattern that is less likely to cause thermal deformation is relatively small. The main control device 16 may be overlapped with the number of measurement target regions of the region of the pattern region 111PA where the exposure pattern is relatively susceptible to thermal deformation, and the exposure of the pattern region 111PA is relatively less likely to cause thermal deformation. Each of the drive mechanisms 25 is controlled in such a manner that the number of measurement target areas in the area portion of the pattern is large. As a result, the main control device 16 can measure the two-dimensional deformation of the portion of the pattern region 111PA which is relatively susceptible to thermal deformation in a relatively high precision. Therefore, the main control unit 16 can accurately overlap each of the irradiation regions on the wafer 141 and the exposure pattern on the reticle 111 (especially, the exposure pattern which is relatively susceptible to thermal deformation). The main control device 16 can cause the respective irradiation regions on the wafer 141 to be on the reticle 111 even in the case where the portion of the region of the exposure pattern which is relatively susceptible to thermal deformation is thermally deformed in the pattern region 111PA. The exposure patterns are superimposed with high precision.

Even in the exposure apparatus 2 of the second embodiment, at least a part of various forms which can be employed in the exposure apparatus 1 of the first embodiment described above can be suitably employed. For example, in the exposure apparatus 2 of the second embodiment, at least a part of various forms adopted in the first to fourth modifications can be suitably employed.

Further, an example of the configuration and operation of the exposure apparatuses 1 and 2 described with reference to FIGS. 1 to 14 will be described. Therefore, at least a part of the configuration and operation of the exposure apparatuses 1 and 2 can be appropriately changed. Hereinafter, an example in which at least a part of the configuration and operation of the exposure apparatuses 1 and 2 are changed will be described.

The exposure apparatus 1 may be a step-scan type scanning type exposure apparatus that moves the reticle 111 and the wafer 141 to form an exposure pattern formed on the reticle 111 by scanning exposure (so-called Scan stepper). The exposure apparatus 1 may cause the exposure pattern formed on the reticle 111 to be exposed once in a state where the reticle 111 and the wafer 141 are stationary, and stepwise move the wafer 141 every time the one exposure ends. A step-and-repeat (srep & repeat) projection exposure device (so-called stepper). In the step-and-repeat type projection exposure apparatus, the reduced image of the first exposure pattern formed on the first reticle 111 may be exposed to the wafer while the first reticle 111 and the wafer 141 are substantially stationary. After 141, the reduced image of the second exposure pattern formed on the second reticle 111 is superimposed on the reduced image of the first exposure pattern while the second reticle 111 and the wafer 141 are substantially stationary. An exposure apparatus on the wafer 141 (a so-called "stitch type exposure apparatus"). The bonding apparatus of the bonding method may be a step-and-stitch type exposure apparatus in which two or more exposure pattern portions are partially overlapped on the wafer 141 and the wafer 141 is sequentially moved.

The exposure device 1 may also be two reticle 111 through the projection optical system 13 The exposure pattern is synthesized on the wafer 141, and the exposure region on the wafer 141 is exposed to the double exposure at substantially the same time by one scanning exposure. An example of such an exposure apparatus is disclosed, for example, in U.S. Patent No. 6,611,316. The exposure device 1 may be an exposure device that does not have a proximity mode of the projection optical system 13. The exposure device 1 may be a mirror projection aligner or the like.

As described above, the exposure apparatus 1 is a dry exposure apparatus that performs exposure of the wafer 141 without passing through a liquid. However, the exposure apparatus 1 may be a liquid immersion space in which an optical path including the exposure light EL is formed between the projection optical system 13 and the wafer 141, and exposure of the wafer 141 is performed through the projection optical system 13 and the liquid immersion space. Exposure device. Further, an example of a liquid immersion exposure apparatus is disclosed in, for example, European Patent Application Publication No. 1420298, International Publication No. 2004/055083, and U.S. Patent No. 6,952,253.

The exposure apparatus 1 may be a double-stage type or a multi-stage type exposure apparatus including a plurality of wafer stages 14. The exposure apparatus 1 may be a double-stage type or a multi-stage type exposure apparatus including a plurality of wafer stages 14 and a measurement stage. An example of a dual stage type exposure apparatus is shown in, for example, U.S. Patent No. 6,341,007, U.S. Patent No. 6,208,407, and U.S. Patent No. 6,262,796.

The projection optical system 13 can also be an equal magnification or an amplification system. The projection optical system 13 may also be a reflection system that does not include a refractive optical element but includes a reflective optical element. The projection optical system 13 may also be a refractive reflection system including both of the refractive optical element and the reflective optical element. The image projected by the projection optical system 13 may also be an inverted image or an erect image. The shape of the illumination area IR and the projection area PR is not limited to a slit shape, and may be any shape (for example, an arc, a trapezoid or a rectangle).

The exposure light EL may be, for example, a bright line (for example, a g line, an h line, or an i line) emitted from a mercury lamp. The exposure light EL may also be far ultraviolet light (DUV light: Deep Ultra Violet light) such as KrF excimer laser light (wavelength 248 nm). The exposure light EL may be vacuum ultraviolet light (VUV light: Vacuum Ultra Violet light) such as F ₂ laser light (wavelength: 157 nm). Exposure light EL, such as disclosed in the specification of U.S. Patent No. 70,236,10, may also be a single wavelength laser light that will be excited from the infrared or visible light region of a DFB semiconductor laser or fiber laser to be doped, for example, with germanium (or The optical fiber amplifiers of both of them are increased in amplitude and harmonics are obtained by wavelength conversion of ultraviolet light using nonlinear optical crystallization.

The exposure light EL is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used. For example, the exposure light EL may be EUV (Extreme Ultra Violet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm). Instead of the exposure light EL, a charged particle beam such as an electron beam or an ion beam can also be used to expose the exposure pattern.

The object to be exposed (i.e., transferred) by the exposure pattern is not limited to the wafer 141, and may be any object such as a glass plate or a ceramic substrate or a film member or a mask substrate.

The position of the reticle stage 11 in the XY plane, in addition to or in place of the reticle laser interferometer 116, can also be measured by an encoder. The position of the wafer stage 14 in the XY plane, in addition to or in place of the wafer laser interferometer 146, can also be measured by an encoder.

The exposure apparatus 1 may be an exposure apparatus for manufacturing a semiconductor element in which a semiconductor element pattern is exposed on the wafer 141. The exposure apparatus 1 may be an exposure apparatus for manufacturing a liquid crystal display element or a display. The exposure device 1 may also be an exposure device for manufacturing at least one of a thin film magnetic head, a photographic element (for example, a CCD), a micromachine, a MEMS, a DNA wafer, and a reticle 111.

The reticle 111 may be a transmissive reticle in which a predetermined light-shielding pattern (or a moving pattern or a dimming pattern) is formed on a light-transmissive transparent plate. The reticle 111 may be a variable shaped reticle (so-called electronic reticle, active reticle or image generator) that forms a transmissive pattern, a reflective pattern, or a luminescent pattern according to the electronic material of the exposure pattern. An example of a variable shaped reticle is disclosed in U.S. Patent No. 6,778,257. The reticle 111 may be a pattern forming device including a self-luminous image display device instead of a variable molding reticle having a non-light-emitting image display element.

The exposure device 1 may also be an exposure device (so-called lithography system) that exposes a line and space pattern to the wafer 141 by forming interference fringes on the wafer 141. An example of such an exposure apparatus is disclosed, for example, in International Publication No. 2001/035168.

The exposure apparatus 1 can also be manufactured by assembling various sub-systems including the above various components in order to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to ensure the mechanical precision, various mechanical systems can be used to adjust the mechanical precision before and after assembly. In order to ensure electrical accuracy, various electrical systems can be used to adjust the electrical accuracy before and after assembly. In order to ensure optical precision, various optical systems can be used to adjust the optical precision before and after assembly. The assembly process of various subsystems may also include a process for performing mechanical connections between various subsystems. The assembly process of various subsystems may also include a process of wiring the circuits of various subsystems. The assembly process of various sub-systems may also include a process of piping connection of the pneumatic circuits between various sub-systems. In addition, the assembly process of each sub-system is performed before the assembly process of various sub-systems. After the assembly process of various subsystems is completed, comprehensive adjustment is performed to ensure various precisions of the entire exposure apparatus 1. Further, the exposure apparatus 1 can be manufactured in a clean room in which temperature and cleanliness are managed.

Micro components such as semiconductor elements can also be added through the steps shown in FIG. Manufacturing. The step of manufacturing the micro-element may further include a step S201 of performing the function and performance design of the micro-element, a step S202 of manufacturing the reticle 111 according to the function and performance design, and a step S203 of manufacturing the substrate 141 of the element. According to the above embodiment, the step S204 of exposing the wafer 141 by the exposure light EL from the exposure pattern of the reticle 111 and developing the exposed wafer 141 includes the component assembly process (cutting process, bonding process, package) Step S205 and inspection step S206 of processing such as processing.

At least a part of the components of the above embodiments may be combined with at least another part of the components of the above embodiments. Some of the constituent elements of the above embodiments may not be used. Further, all publications and U.S. patents relating to the exposure apparatus and the like cited in the above embodiments are incorporated herein by reference.

The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the scope of the gist of the invention, which can be read from the scope of the patent application and the entire specification, the exposure apparatus and the exposure method and the component manufacturing method. It is also included in the technical idea of the present invention.

AX1, AX2‧‧‧ optical axis

LB1‧‧‧ reference light

LB2, LB2(1), LB2(2), LB2(3), LB2(4)‧‧‧Measurement light

LB3‧‧‧Interference light

111‧‧‧ reticle

111PA‧‧‧ pattern area

15‧‧‧ spot measuring device

151‧‧‧Light source

152‧‧‧Optical components

152a‧‧‧Optical matte

152b‧‧‧ convex pattern

152c‧‧‧ recessed pattern

153‧‧‧ Concentrating lens

154‧‧‧Projection lens

155‧‧‧ pinhole plate

155a‧‧‧ pinhole

156‧‧‧Light-receiving components

158‧‧‧Shell

Claims (42)

An exposure apparatus for irradiating an energy beam to a reticle to transfer a reticle pattern formed on a pattern surface of the reticle to an object, comprising: a light illuminating unit that illuminates a predetermined surface of the reticle a plurality of measurement lights having different incident angles of the predetermined faces; and a sensor portion detecting at least a portion of the plurality of measurement lights reflected or scattered on the predetermined surface. The exposure apparatus according to claim 1, wherein the light irradiation unit includes a light source that illuminates the reference light, and an optical member that can generate the plurality of measurement lights from the reference light. The exposure apparatus of claim 2, wherein the optical member comprises a first member that can generate the plurality of measurement lights by scattering or reflecting the reference light in a plurality of different directions. The exposure apparatus of claim 3, wherein the first member includes an illumination surface that is illuminated by the reference light and that can generate the plurality of measurement lights by scattering or reflecting the reference light in a plurality of different directions. The exposure apparatus of claim 4, wherein the irradiation surface is formed with a random or irregular first concave-convex pattern. The exposure apparatus according to claim 5, wherein the first concave-convex pattern includes at least a first convex portion pattern that protrudes in a direction intersecting the irradiation surface and a first concave portion pattern that is smaller than a surrounding concave portion. One. The exposure apparatus of claim 6, wherein at least one of the first convex portion pattern and the first concave portion pattern is larger than the reference in a direction intersecting the irradiation surface The wavelength of light. The exposure apparatus according to any one of claims 5 to 7, wherein the first concavo-convex pattern includes a second concavo-convex pattern different from the mask pattern. The exposure apparatus according to any one of claims 4 to 8, wherein the reflectance of the illumination to the reference light is equal to or greater than a predetermined value. The exposure apparatus according to any one of claims 2 to 9, wherein the optical member comprises a second member capable of dividing the reference light into the plurality of measurement lights. The exposure apparatus according to any one of claims 2 to 10, further comprising a stage portion capable of holding the mask and moving; the optical member is fixed to the stage portion. The exposure apparatus according to any one of claims 1 to 11, wherein the light irradiation unit includes a plurality of light sources that respectively illuminate the plurality of measurement lights. The exposure apparatus according to any one of claims 1 to 12, wherein the light illuminating portion illuminates the plurality of measuring light toward one of two opposite surfaces of the reticle; the sensor The portion detects at least a portion of the plurality of measurement lights transmitted from the other of the two opposite surfaces of the reticle. The exposure apparatus according to any one of claims 1 to 13, wherein the light illuminating portion illuminates the plurality of measurement lights toward one of two opposite surfaces of the reticle; the sensor The portion detects at least a portion of the plurality of measurement lights transmitted from the one of the opposite surfaces of the reticle. The exposure apparatus according to any one of claims 1 to 14, wherein an optical axis of the illumination optical system including the light irradiation portion and an optical axis of the sensor optical system including the sensor portion are not with. The exposure apparatus according to any one of claims 1 to 15, further comprising a stage portion capable of holding the movement of the mask; wherein the sensor portion is fixed to the stage portion. The exposure device of any one of the preceding claims, wherein the sensor portion obtains at least a portion of the plurality of measurement lights to be irradiated by detecting at least a portion of the plurality of measurement lights Information on the spots produced by a given surface. The exposure apparatus according to any one of claims 1 to 17, wherein a third concave-convex pattern regularly arranged along the first direction is formed on the predetermined surface, and the light-irradiating portion illuminates the third concave-convex pattern A plurality of measurement lights having different incident angles with respect to the predetermined surface. The exposure apparatus according to any one of claims 1 to 18, further comprising a moving unit that moves at least one of the light irradiation unit and the sensor unit. An exposure apparatus for irradiating an energy beam to a photomask to transfer a mask pattern formed on a pattern surface of the mask to an object, comprising: a light irradiation unit that measures a predetermined surface of the mask a sensor; detecting at least a portion of the measurement light reflected or scattered on the predetermined surface; and moving the portion to move at least one of the light irradiation portion and the sensor portion. The exposure apparatus of claim 19 or 20, further comprising: a stage portion capable of holding the movement of the mask; the moving portion causing at least one of the light irradiation portion and the sensor portion to follow the pattern Parallel And moving in a direction intersecting the moving direction of the stage portion. The exposure apparatus according to any one of claims 19 to 21, further comprising: a stage portion capable of holding the movement of the mask; the moving portion irradiating the predetermined surface of the measurement light with the light irradiation portion along The light irradiation unit is moved in such a manner as to be parallel to the pattern surface and to move in a direction intersecting the moving direction of the stage portion. The exposure apparatus according to any one of claims 19 to 22, further comprising: a stage portion capable of holding the movement of the mask; the moving portion reflecting or scattering the measurement light detected by the sensor portion The predetermined surface moves the sensor portion so as to move in a direction parallel to the pattern surface and intersecting the moving direction of the stage portion. The exposure apparatus according to any one of the items 19 to 22, wherein the moving portion is formed with a position in a pattern surface of a portion of the pattern of the portion of the pattern that is actually used in the pattern surface. At least one of the light irradiation unit and the sensor unit is moved. The exposure apparatus according to claim 24, wherein the moving portion moves at least one of the light irradiation portion and the sensor portion such that the predetermined surface is included in the portion of the pattern surface. An exposure apparatus according to any one of claims 19 to 25, further comprising: a plurality of the sensor portions that respectively detect measurement light reflected or scattered from each other at the predetermined surface; the moving portion makes the plurality of Each movement of the sensor section. The exposure apparatus according to any one of claims 1 to 25, wherein the light-irradiating portion has a second timing different from a first timing at which the mask pattern is being transferred to the object, and the predetermined surface Irradiating the measurement light; The sensor unit detects at least a part of the measurement light at a third timing different from the first timing. An exposure apparatus for irradiating an energy beam to a photomask to transfer a mask pattern formed on a pattern surface of the mask to an object, comprising: a light irradiation portion, and a positive transfer with the mask pattern a second timing different from the first timing of the object, the measurement light is irradiated onto the predetermined surface of the mask; and the sensor portion detects the reflection or scattering on the predetermined surface at a third timing different from the first timing At least a portion of the measurement light. An exposure apparatus according to claim 27 or 28, further comprising: an object stage portion capable of holding the object to move; wherein at least one of the second timing and the third timing includes the object stage unit holding At least a portion of the timing at which the object is replaced. The exposure apparatus according to any one of claims 27 to 29, wherein at least one of the second timing and the third timing includes at least a part of a timing of measuring an operation parameter or a state parameter of the exposure apparatus. The exposure apparatus according to any one of claims 27 to 30, wherein at least one of the second timing and the third timing includes at least a part of a timing at which the predetermined surface is outside an optical path of the energy beam. The exposure apparatus according to any one of claims 27 to 31, further comprising: a first measuring unit that measures a position of the reticle using a reticle alignment mark formed on the reticle; the second timing and the At least one of the third timings includes at least a portion of the timing at which the position of the reticle is measured by the first measuring unit using the reticle alignment mark. The exposure apparatus according to any one of claims 27 to 32, wherein at least a part of the second timing is overlapped with at least a part of the third timing. The exposure apparatus according to any one of claims 27 to 33, further comprising: a mask stage portion that can hold the mask movement; and a calculation unit that is detected by the sensor unit and is predetermined Calculating a variation of a predetermined area on the pattern surface by at least a part of the measurement light reflected or scattered by the surface; and providing a reference member having a reference pattern on the mask stage; the light irradiation unit is the first The fourth timing is different from the timing, the reference light is irradiated to the reference member; and the sensor portion detects at least a portion of the measurement light reflected or scattered by the reference member at a fifth timing different from the first timing; The calculation unit calculates a measurement error of the fluctuation amount due to the deviation of the sensor unit based on at least a part of the measurement light detected by the sensor unit and reflected or scattered by the reference member. The exposure apparatus of claim 34, further comprising: an object stage portion capable of holding the object to move; at least one of the fourth timing and the fifth time sequence, wherein the object held by the object stage portion is At least part of the timing of the replacement. The exposure apparatus of claim 34 or 35, wherein at least one of the fourth timing and the fifth timing includes at least a part of a timing of measuring an operation parameter or a state parameter of the exposure apparatus. The exposure apparatus according to any one of claims 34 to 36, wherein at least one of the fourth timing and the fifth timing includes when the predetermined surface is outside the optical path of the energy beam At least part of the sequence. The exposure apparatus according to any one of claims 34 to 37, further comprising: a measuring unit that measures a position of the reticle using a reticle alignment mark formed on the reticle; the fourth timing and the fifth At least one of the timings includes at least a portion of the timing at which the measurement portion measures the position of the reticle using the reticle alignment mark. An exposure method for irradiating an energy beam to a reticle to transfer a reticle pattern formed on a pattern surface of the reticle to an object, wherein the predetermined surface of the reticle is irradiated with respect to the predetermined surface a plurality of measurement lights having different angles from each other; detecting at least a portion of the plurality of measurement lights reflected or scattered on the predetermined surface. An exposure method is characterized in that an energy beam is irradiated to a reticle to transfer a reticle pattern formed on a pattern surface of the reticle to an object, wherein the light illuminating portion is used to illuminate the predetermined surface of the reticle with the measurement light; At least a portion of the measurement light reflected or scattered on the predetermined surface is detected by the sensor portion; at least one of the light irradiation portion and the sensor portion is moved. An exposure method for irradiating an energy beam to a reticle to transfer a reticle pattern formed on a pattern surface of the reticle to an object, wherein the first reticle pattern is transferred to the object The second timing differs in timing, the measurement light is irradiated onto the predetermined surface of the mask, and at least a portion of the measurement light reflected or scattered on the predetermined surface is detected at a third timing different from the first timing. A component manufacturing method by the exposure of any one of claims 39 to 41 The photomask pattern is transferred to the sensing substrate; the sensing substrate to which the mask pattern is transferred is developed.