JP2007158129A5 - - Google Patents
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- Publication number
- JP2007158129A5 JP2007158129A5 JP2005352723A JP2005352723A JP2007158129A5 JP 2007158129 A5 JP2007158129 A5 JP 2007158129A5 JP 2005352723 A JP2005352723 A JP 2005352723A JP 2005352723 A JP2005352723 A JP 2005352723A JP 2007158129 A5 JP2007158129 A5 JP 2007158129A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- layer
- oxide
- metal
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 13
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000010936 titanium Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 239000011572 manganese Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- -1 nitride compound Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352723A JP4738999B2 (ja) | 2005-12-06 | 2005-12-06 | 半導体光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352723A JP4738999B2 (ja) | 2005-12-06 | 2005-12-06 | 半導体光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007158129A JP2007158129A (ja) | 2007-06-21 |
| JP2007158129A5 true JP2007158129A5 (enrdf_load_stackoverflow) | 2008-08-14 |
| JP4738999B2 JP4738999B2 (ja) | 2011-08-03 |
Family
ID=38242066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005352723A Active JP4738999B2 (ja) | 2005-12-06 | 2005-12-06 | 半導体光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4738999B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090072980A (ko) * | 2007-12-28 | 2009-07-02 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
| JP2010171376A (ja) * | 2008-12-26 | 2010-08-05 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| EP2660883B1 (en) | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system |
| JP5768759B2 (ja) * | 2012-04-27 | 2015-08-26 | 豊田合成株式会社 | 半導体発光素子 |
| CN103682020A (zh) * | 2012-08-31 | 2014-03-26 | 展晶科技(深圳)有限公司 | 发光二极管晶粒的制造方法 |
| JP6295693B2 (ja) * | 2014-02-07 | 2018-03-20 | ソニー株式会社 | 撮像装置 |
| DE102016104280A1 (de) * | 2016-03-09 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
| CN106449899B (zh) * | 2016-08-31 | 2019-07-02 | 中联西北工程设计研究院有限公司 | 一种垂直结构蓝光led芯片的制备方法 |
| CN109873062B (zh) * | 2019-01-29 | 2020-06-16 | 南昌大学 | 一种带有复合反射镜的AlGaInP红色发光二极管器件结构 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3846150B2 (ja) * | 2000-03-27 | 2006-11-15 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法 |
| JP4604488B2 (ja) * | 2003-12-26 | 2011-01-05 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
| JP4956902B2 (ja) * | 2005-03-18 | 2012-06-20 | 三菱化学株式会社 | ＧａＮ系発光ダイオードおよびそれを用いた発光装置 |
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2005
- 2005-12-06 JP JP2005352723A patent/JP4738999B2/ja active Active