JP2007150348A - Wiring substrate and electronic component mounting structure - Google Patents

Wiring substrate and electronic component mounting structure Download PDF

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JP2007150348A
JP2007150348A JP2007025599A JP2007025599A JP2007150348A JP 2007150348 A JP2007150348 A JP 2007150348A JP 2007025599 A JP2007025599 A JP 2007025599A JP 2007025599 A JP2007025599 A JP 2007025599A JP 2007150348 A JP2007150348 A JP 2007150348A
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conductor
hole
wiring
wiring board
insulating layer
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Seiichi Takami
征一 高見
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring substrate with high reliability which can sufficiently bear thermal stress even if long-term thermal histeresis is applied repeatedly in the wiring substrate having a through conductor with a small diameter. <P>SOLUTION: The wiring substrate has an insulating layer 1c having a through-hole 3, and a through conductor 4 which is partly formed in the through-hole 3. In the through conductor 4, a lower end closes the bottom of the through-hole 3, and a projecting part projects outwardly from the inner wall of the through-hole 3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体素子等の電子部品を搭載するために用いられる配線基板およびそれを用いた電子部品搭載構造体に関する。   The present invention relates to a wiring board used for mounting an electronic component such as a semiconductor element and an electronic component mounting structure using the wiring substrate.

一般に、現在の電子機器は、移動体通信機器に代表されるように小型・薄型・軽量・高性能・高機能・高品質・高信頼性が要求されてきており、このような電子機器に搭載される電子装置も小型・高密度化が要求されるようになってきている。そのため、電子装置を構成する配線基板にも小型・薄型・多端子化が求められてきており、それを実現するために信号導体等の配線導体の幅を細くするとともにその間隔を狭くし、さらに配線導体の多層化により高密度配線化が図られている。   In general, current electronic devices are required to be small, thin, lightweight, high performance, high functionality, high quality, and high reliability, as represented by mobile communication devices. Electronic devices to be used are also required to be small and high density. Therefore, the wiring board constituting the electronic device is also required to be small, thin, and multi-terminal, and in order to realize it, the width of the wiring conductor such as the signal conductor is narrowed and the interval is narrowed. High-density wiring is achieved by increasing the number of wiring conductors.

このような高密度配線が可能な配線基板として、ビルドアップ法を採用して製作された配線基板が知られている。このビルドアップ配線基板は、例えば、ガラスクロスやアラミド不布織等の補強材に耐熱性や耐薬品性を有するエポキシ樹脂に代表される熱硬化性樹脂を含浸させて加熱硬化した芯体絶縁層の表面に配線導体を被着形成するとともに、エポキシ樹脂等の熱硬化性樹脂から成る樹脂ワニスを塗布するとともに加熱硬化して絶縁層を形成した後、配線導体上の絶縁層にレーザで径が50〜200μm程度の貫通孔を穿設し、しかる後、貫通孔の内部および絶縁層の表面を過マンガン酸カリウム溶液等の粗化液で化学粗化し、さらにセミアディティブ法を用いて絶縁層の表面および貫通孔の内壁に銅めっきから成る導体膜を被着して配線導体および貫通導体を形成し、その上に絶縁層や貫通導体・配線導体の形成を複数回繰り返すことによって製作される。なお、貫通導体は貫通孔の下部で下層の配線導体と電気的に接続されている。   As a wiring board capable of such high-density wiring, a wiring board manufactured by adopting a build-up method is known. This build-up wiring board is, for example, a core insulation layer that is heat-cured by impregnating a reinforcing material such as glass cloth or aramid non-woven fabric with a thermosetting resin typified by an epoxy resin having heat resistance and chemical resistance. After the wiring conductor is formed on the surface of the substrate, a resin varnish made of a thermosetting resin such as an epoxy resin is applied and heat-cured to form an insulating layer. A through hole of about 50 to 200 μm is formed, and then the inside of the through hole and the surface of the insulating layer are chemically roughened with a roughening solution such as a potassium permanganate solution, and further, the insulating layer is formed using a semi-additive method. A conductor film made of copper plating is deposited on the surface and the inner wall of the through hole to form a wiring conductor and a through conductor, and an insulating layer, a through conductor and a wiring conductor are formed on the wiring conductor and the through conductor repeatedly. The through conductor is electrically connected to the lower wiring conductor below the through hole.

しかしながら、レーザで貫通孔を穿設する際に、絶縁層の熱硬化性樹脂が貫通孔の下部に位置する配線導体上に残ってしまい、貫通孔の内部を過マンガン酸カリウム溶液等の粗化液で化学粗化しても、配線導体上に残った熱硬化性樹脂を完全に除去することができず、貫通導体と配線導体との電気的な接続を阻害してしまうという問題点があった。   However, when the through hole is drilled with a laser, the thermosetting resin of the insulating layer remains on the wiring conductor located under the through hole, and the inside of the through hole is roughened with a potassium permanganate solution or the like. Even if it is chemically roughened with a liquid, the thermosetting resin remaining on the wiring conductor cannot be completely removed, and the electrical connection between the through conductor and the wiring conductor is hindered. .

この残存する熱硬化性樹脂を完全に除去するために、特開2000−244127号公報には、貫通孔の下部に位置する配線導体の表面をエッチングして、凹部を設けた配線基板が提案されている。
特開2000−244127号公報
In order to completely remove the remaining thermosetting resin, Japanese Patent Application Laid-Open No. 2000-244127 proposes a wiring board provided with a recess by etching the surface of the wiring conductor located below the through hole. ing.
JP 2000-244127 A

しかしながら、特開2000−244127号公報に記載された配線基板は、径が50μm以下の小径の貫通導体になると、貫通導体の底面と配線導体との接続面積が狭くなること、および、銅めっきから成る貫通導体の熱膨張係数が18×10-6/℃程度であるのに対して絶縁層の厚み方向の熱膨張係数が80〜200×10-6/℃と大きく異なるので、配線基板に長期の熱履歴を繰り返し印可すると、絶縁層と貫通導体との熱膨張差による熱応力が両者の接続部に集中して断線不良を発生させるという問題点を有していた。 However, the wiring board described in Japanese Patent Application Laid-Open No. 2000-244127 has a reduced connection area between the bottom surface of the through conductor and the wiring conductor when the small diameter through conductor has a diameter of 50 μm or less, and copper plating. The thermal expansion coefficient of the through conductor is approximately 18 × 10 −6 / ° C, whereas the thermal expansion coefficient in the thickness direction of the insulating layer is greatly different from 80 to 200 × 10 −6 / ° C. When the thermal history is repeatedly applied, the thermal stress due to the difference in thermal expansion between the insulating layer and the through conductor is concentrated at the connection portion between the two, causing a disconnection failure.

発明はかかる従来技術の問題点に鑑み完成されたものであり、その目的は、小径の貫通導体を有する配線基板において、長期の熱履歴を繰り返し印可しても、熱応力に充分耐え、断線等が生じない接続信頼性の高い配線基板およびそれを用いた電子部品搭載構造体を提供することにある。   The present invention has been completed in view of the problems of the prior art, and its purpose is to sufficiently withstand thermal stress even if a long-term thermal history is repeatedly applied to a wiring board having a small-diameter through conductor, and to break the wire. It is an object of the present invention to provide a wiring board with high connection reliability that does not cause the problem and an electronic component mounting structure using the wiring board.

本発明の配線基板は、貫通孔を有する絶縁層と、一部が前記貫通孔内に形成された貫通導体とを具備して成る配線基板であって、前記貫通導体は、下端部が前記貫通孔の底部を塞ぐとともに前記貫通孔の内壁より外方へ突出した突出部を有していることを特徴とする。   The wiring board of the present invention is a wiring board comprising an insulating layer having a through-hole and a through-conductor partially formed in the through-hole, the lower end of the through-conductor having the through-hole. It has a protruding portion that closes the bottom of the hole and protrudes outward from the inner wall of the through hole.

本発明の配線基板において好ましくは、前記貫通導体は、前記下端部と前記貫通孔内に形成された部位とが一体的に形成されていることを特徴とする。   In the wiring board of the present invention, it is preferable that the through conductor is integrally formed with the lower end portion and a portion formed in the through hole.

本発明の配線基板において好ましくは、前記絶縁層は樹脂であることを特徴とする。   In the wiring board of the present invention, preferably, the insulating layer is a resin.

本発明の配線基板において好ましくは、前記貫通導体はめっきにより形成されていることを特徴とする。   In the wiring board of the present invention, preferably, the through conductor is formed by plating.

本発明の配線基板において好ましくは、前記下端部を下方から覆うように接続された配線導体をさらに有することを特徴とする。   Preferably, the wiring board of the present invention further includes a wiring conductor connected so as to cover the lower end portion from below.

本発明の配線基板において好ましくは、前記配線導体は、前記下端部との接続部が残部よりも薄くなっていることを特徴とする。   In the wiring board of the present invention, preferably, the wiring conductor has a connection portion with the lower end portion thinner than the remaining portion.

本発明の配線基板において好ましくは、前記配線導体は、表面に凹部が形成されており、該凹部に前記下端部が配置されていることを特徴とする。   In the wiring board of the present invention, preferably, the wiring conductor has a concave portion formed on a surface thereof, and the lower end portion is disposed in the concave portion.

本発明の配線基板において好ましくは、前記突出部の上面と前記配線導体の上面とが同一面上に位置することを特徴とする。   The wiring board according to the present invention is preferably characterized in that the upper surface of the protruding portion and the upper surface of the wiring conductor are located on the same plane.

本発明の電子部品搭載構造体は、上記本発明の配線基板に電子部品を搭載して成ることを特徴とする。   The electronic component mounting structure of the present invention is characterized in that the electronic component is mounted on the wiring board of the present invention.

本発明によれば、半導体素子等の実装部品を配線基板に搭載した状態で、長期の熱履歴を繰り返し印可しても、熱応力からくる縦方向の引張応力に耐え、断線等が生じない接続信頼性の高いものとすることができる。   According to the present invention, even when a mounting component such as a semiconductor element is mounted on a wiring board, even if a long-term thermal history is repeatedly applied, it can withstand longitudinal tensile stress resulting from thermal stress, and disconnection does not occur. It can be highly reliable.

次に、本発明の配線基板を添付の図面に基づいて詳細に説明する。   Next, the wiring board of the present invention will be described in detail with reference to the accompanying drawings.

図1は、本発明の配線基板をビルドアップ配線基板に適用した場合の実施の形態の一例を示す断面図であり、図2は、図1の要部拡大断面図である。   FIG. 1 is a cross-sectional view showing an example of an embodiment when the wiring board of the present invention is applied to a build-up wiring board, and FIG. 2 is an enlarged cross-sectional view of the main part of FIG.

これらの図において、1は絶縁層、2は配線導体、3は貫通孔、4は貫通導体、5は貫通孔3の下に位置する領域に形成された凹部で、主にこれらで本発明の配線基板が構成される。なお、本例では芯体と成る芯体絶縁層1aの上下面にそれぞれ第一の絶縁層1bと第二の絶縁層1cとを積層した例を示している。   In these drawings, 1 is an insulating layer, 2 is a wiring conductor, 3 is a through-hole, 4 is a through-conductor, and 5 is a recess formed in a region located below the through-hole 3. A wiring board is configured. In this example, the first insulating layer 1b and the second insulating layer 1c are laminated on the upper and lower surfaces of the core insulating layer 1a serving as the core, respectively.

芯体絶縁層1aは、第一および第二の絶縁層1b・1cの支持体としての機能を有するとともに配線基板に強度を付与する機能を有し、厚みが0.3〜1.5mm程度の板状である。このような芯体絶縁層1aは、例えばガラス繊維を縦横に織り込んだガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させて成り、その上面から下面にかけて直径が0.1〜1.0mm程度の複数のスルーホール11を有している。そして、その上下面には配線導体2が、各スルーホール11の内壁にはスルーホール導体12が被着されており、上下面の配線導体2同士がスルーホール11の内壁に形成されたスルーホール導体12を介して電気的に接続されている。   The core insulating layer 1a has a function as a support for the first and second insulating layers 1b and 1c and has a function of imparting strength to the wiring board, and is a plate having a thickness of about 0.3 to 1.5 mm. is there. Such a core insulating layer 1a is formed, for example, by impregnating a glass cloth in which glass fibers are woven vertically and horizontally with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin, and has a diameter of 0.1 to 1.0 from the upper surface to the lower surface. It has a plurality of through holes 11 of about mm. The wiring conductor 2 is attached to the upper and lower surfaces, and the through-hole conductor 12 is attached to the inner wall of each through-hole 11. The through-holes are formed on the inner wall of the through-hole 11. It is electrically connected through the conductor 12.

このような芯体絶縁層1aには、未硬化の芯体絶縁層用のシートの上下全面に厚みが3〜50μmの銅箔を被着するとともにこの銅箔をシートの硬化後にエッチング加工して所定のパターンに形成することにより配線導体2が、また、上記シートを熱硬化させた後、これに上面から下面にかけてドリル加工を施すことによりスルーホール11が、さらに、スルーホール11の内壁にめっき法により厚みが3〜50μm程度の銅めっきを析出させて被着することによりスルーホール導体12が形成される。なお、配線導体2は、スルーホール11の内壁にスルーホール導体12を被着形成する際に、めっき法によりスルーホール導体12と一体的に形成してもよい。   In such a core insulating layer 1a, a copper foil having a thickness of 3 to 50 μm is applied to the entire upper and lower surfaces of a sheet for an uncured core insulating layer, and this copper foil is etched after the sheet is cured. The wiring conductor 2 is formed in a predetermined pattern, and after the sheet is thermally cured, the through hole 11 is further plated on the inner wall of the through hole 11 by drilling from the upper surface to the lower surface. Through-hole conductors 12 are formed by depositing and depositing copper plating having a thickness of about 3 to 50 μm by the method. The wiring conductor 2 may be formed integrally with the through-hole conductor 12 by plating when the through-hole conductor 12 is deposited on the inner wall of the through-hole 11.

さらに、芯体絶縁層1aは、スルーホール11の内部にエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂から成る樹脂柱13が充填されている。樹脂柱13は、スルーホール11を塞ぐことによりスルーホール11の直上および直下に第一および第二の絶縁層1b・1cを形成可能とするためのものであり、未硬化のペースト状の熱硬化性樹脂をスルーホール11内にスクリーン印刷法により充填し、これを熱硬化させた後、その上下面を略平坦に研磨することにより形成される。そして、この樹脂柱13を含む芯体絶縁層1aの上下面に絶縁層1b・1cが積層されている。   Furthermore, the core insulating layer 1a is filled with resin pillars 13 made of a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin in the through hole 11. The resin pillar 13 is used to form the first and second insulating layers 1b and 1c immediately above and below the through hole 11 by closing the through hole 11, and is an uncured paste-like thermosetting The resin is filled in the through-hole 11 by screen printing, thermally cured, and then the upper and lower surfaces thereof are polished to be substantially flat. Insulating layers 1b and 1c are laminated on the upper and lower surfaces of the core insulating layer 1a including the resin pillars 13.

第一および第二の絶縁層1b・1cは、それぞれの厚みが20〜60μm程度で、エポキシ樹脂や変性ポリフェニレンエーテル樹脂等の熱硬化性樹脂と粒径が0.01〜2μmで含有量が10〜50重量%のシリカやアルミナ・窒化アルミニウム等の無機絶縁フィラーとから成る。   Each of the first and second insulating layers 1b and 1c has a thickness of about 20 to 60 μm, a thermosetting resin such as an epoxy resin or a modified polyphenylene ether resin, and a particle size of 0.01 to 2 μm and a content of 10 to 50. It consists of inorganic insulating fillers such as silica and alumina / aluminum nitride.

第一および第二の絶縁層1b・1cは、配線導体2を高密度に配線するための絶縁間隔を提供するためのものであり、そして、上下の配線導体2を貫通孔3の内壁に被着形成した貫通導体4を介して電気的に接続することにより高密度配線を立体的に形成可能としている。このような第一および第二の絶縁層1b・1cは、未硬化の熱硬化性樹脂と無機絶縁フィラーから成るフィルムを、それぞれ芯体絶縁層1a上下面に順番に積層し、これらを熱硬化することにより形成される。なお、配線導体2は第一の絶縁層1bを形成した後にその表面に、厚みが3〜50μm程度の銅めっき膜を従来公知のセミアディティブ法やサブトラクティブ法のパターン形成法により所定のパターンに被着させることによって形成される。   The first and second insulating layers 1b and 1c are provided to provide an insulation interval for wiring the wiring conductors 2 at high density, and the upper and lower wiring conductors 2 are covered on the inner wall of the through hole 3. High density wiring can be formed in three dimensions by electrical connection through the formed through conductors 4. The first and second insulating layers 1b and 1c are formed by sequentially laminating films made of uncured thermosetting resin and inorganic insulating filler on the upper and lower surfaces of the core insulating layer 1a, respectively, and thermosetting them. It is formed by doing. In addition, after forming the first insulating layer 1b, the wiring conductor 2 is formed on the surface thereof with a copper plating film having a thickness of about 3 to 50 μm in a predetermined pattern by a conventionally known semi-additive method or subtractive pattern formation method. It is formed by depositing.

また、第一の絶縁層1b上に形成された配線導体2上の第二の絶縁層1cには、貫通孔3が形成されている。貫通孔3は、その開孔径が20〜100μm程度であり、第二の絶縁層1cを積層後、従来周知の炭酸ガスレーザやUV−YAGレーザ・エキシマレーザ等を用いて加工することにより形成される。   A through hole 3 is formed in the second insulating layer 1c on the wiring conductor 2 formed on the first insulating layer 1b. The through hole 3 has an opening diameter of about 20 to 100 μm, and is formed by stacking the second insulating layer 1c and then processing it using a conventionally known carbon dioxide laser, UV-YAG laser, excimer laser, or the like. .

なお、配線導体2は、搭載される半導体素子等の電子部品(図示せず)の各電極を外部電気回路基板(図示せず)に接続するための導電路としての機能を有し、配線導体2の厚みが3〜50μm程度であることが好ましく、高速の信号を伝達させるという観点から3μm以上であることが、配線導体2と絶縁層1b・1cとの熱膨張差による剥離を防止するという観点からは50μm以下であることが好ましい。   The wiring conductor 2 has a function as a conductive path for connecting each electrode of an electronic component (not shown) such as a semiconductor element to be mounted to an external electric circuit board (not shown). The thickness of 2 is preferably about 3 to 50 μm, and 3 μm or more from the viewpoint of transmitting a high-speed signal is to prevent peeling due to a difference in thermal expansion between the wiring conductor 2 and the insulating layers 1b and 1c. From the viewpoint, it is preferably 50 μm or less.

そして本発明の配線基板においては、配線導体2の貫通孔3の直下の上面に、貫通孔3よりも直径の大きな凹部5がその内側に貫通孔3が位置するように形成されており、この凹部5内が銅めっきにより充填されている。また、本発明の配線基板においては、このことが重要である。   In the wiring board of the present invention, the concave portion 5 having a diameter larger than that of the through hole 3 is formed on the upper surface immediately below the through hole 3 of the wiring conductor 2 so that the through hole 3 is located inside thereof. The inside of the recess 5 is filled with copper plating. This is important in the wiring board of the present invention.

本発明によれば、配線導体2の貫通孔3の直下の上面に、貫通孔3よりも直径の大きな凹部5をその内側に貫通孔3が位置するように形成し、この凹部5内を銅めっきにより充填したことから、銅めっきの凹部5内に形成された部位がくさびとなって貫通導体4と配線導体2とを強固に接続することが可能となる。よって、半導体素子等の電子部品を配線基板に搭載した電子部品搭載構造体の状態で、長期の熱履歴を繰り返し印可しても、熱応力からくる縦方向の引張応力に耐え、断線等が生じない接続信頼性の高いものとすることができる。   According to the present invention, the concave portion 5 having a diameter larger than that of the through hole 3 is formed on the upper surface immediately below the through hole 3 of the wiring conductor 2 so that the through hole 3 is located inside the concave portion 5. Since the filling is performed by plating, the portion formed in the concave portion 5 of the copper plating becomes a wedge, and the through conductor 4 and the wiring conductor 2 can be firmly connected. Therefore, even when a long-term thermal history is applied repeatedly in the state of an electronic component mounting structure in which electronic components such as semiconductor elements are mounted on a wiring board, it withstands longitudinal tensile stress resulting from thermal stress and disconnection occurs. There can be no connection reliability.

このような配線導体2・貫通孔3および貫通導体4は、次の方法により形成される。まず、表面に配線導体2を被着形成した第一の絶縁層1b上に第二の絶縁層1cを被着するとともに、配線導体2上の第二の絶縁層1cにレーザで貫通孔3を穿設し、配線導体2の一部を露出させる。次に、第二の絶縁層1cの表面・貫通孔3の内壁、貫通孔3の内部に露出した配線導体2を過マンガン酸塩類水溶液等の粗化液に60℃で略15分間浸漬し粗化し、その後、硫酸・過酸化水素水等からなるエッチング液に25℃で数分間浸漬し、貫通孔3の内部に露出した配線導体2をエッチングして貫通孔3内に露出する部位に貫通孔3の直径よりも径の大きな凹部5を形成する。次に、硫酸銅・ロッセル塩・ホルマリン・EDTAナトリウム塩・安定剤等から成る無電解銅めっき液に40℃で略30分間浸漬し、絶縁層1c表面および貫通孔3の内壁、凹部5の全面に1〜2μm程度の無電解銅めっきを析出させる。さらに、無電解銅めっき層上に配線パターン状の開口部を有する耐めっき樹脂層を被着し、硫酸・硫酸5水和物・塩素・光沢剤から成る電解銅めっき液に略1時間浸漬し、耐めっき樹脂層の開口部に電解銅めっきを被着させた後、耐めっき樹脂層を剥離し、エッチングすることにより配線導体2および貫通導体4が形成される。   Such wiring conductor 2 / through hole 3 and through conductor 4 are formed by the following method. First, the second insulating layer 1c is deposited on the first insulating layer 1b having the wiring conductor 2 deposited on the surface, and the through-hole 3 is formed in the second insulating layer 1c on the wiring conductor 2 by laser. A part of the wiring conductor 2 is exposed. Next, the surface of the second insulating layer 1c, the inner wall of the through-hole 3, and the wiring conductor 2 exposed inside the through-hole 3 are immersed in a roughening solution such as a permanganate aqueous solution at 60 ° C. for about 15 minutes. After that, it is immersed in an etching solution made of sulfuric acid / hydrogen peroxide solution at 25 ° C. for several minutes, and the wiring conductor 2 exposed inside the through hole 3 is etched to form a through hole at a portion exposed in the through hole 3. A recess 5 having a diameter larger than 3 is formed. Next, it is immersed in an electroless copper plating solution composed of copper sulfate, rossel salt, formalin, EDTA sodium salt, stabilizer, etc. at 40 ° C. for about 30 minutes, and the surface of the insulating layer 1c, the inner wall of the through hole 3, and the entire surface of the recess 5 1 to 2 μm of electroless copper plating is deposited. Furthermore, a plating-resistant resin layer having a wiring pattern-shaped opening is deposited on the electroless copper plating layer, and immersed in an electrolytic copper plating solution composed of sulfuric acid, sulfuric acid pentahydrate, chlorine, and brightener for about 1 hour. After the electrolytic copper plating is applied to the opening of the plating resistant resin layer, the plating resistant resin layer is peeled off and etched to form the wiring conductor 2 and the through conductor 4.

凹部5は、断面形状が長方形・台形等の多角形や半円形等であり、その開口の直径が底部の直径に対して5〜20%程度大きいことが好ましい。凹部5の直径が貫通孔3の底部の直径より5%未満大きいと、くさび状の食込みが少なく配線導体2と貫通導体4とを強固に接続することができず、長期の熱履歴を繰り返し印可すると断線してしまう傾向にあり、20%を超えて大きいと、銅めっき液が凹部5の奥に十分に浸透することができず、良好な形状の貫通導体4を形成できない傾向にある。従って、凹部5の直径は貫通孔3の底部の径に対して5〜20%程度大きいことが好ましい。   The recess 5 has a polygonal shape such as a rectangle or trapezoid, a semicircular shape, etc., and the diameter of the opening is preferably about 5 to 20% larger than the diameter of the bottom. If the diameter of the recess 5 is less than 5% larger than the diameter of the bottom of the through-hole 3, there is little wedge-like biting and the wiring conductor 2 and the through-conductor 4 cannot be firmly connected, and a long-term thermal history can be applied repeatedly. Then, there is a tendency to break, and if it exceeds 20%, the copper plating solution cannot sufficiently penetrate into the recess 5 and the penetrating conductor 4 having a good shape cannot be formed. Therefore, the diameter of the recess 5 is preferably about 5 to 20% larger than the diameter of the bottom of the through hole 3.

また、凹部5の深さは、配線導体2の厚みに対して5〜50%程度であることが好ましい。深さが配線導体2の厚みの5%未満では配線導体2上に残った熱硬化性樹脂を完全に除去することができず、貫通導体4と配線導体2との電気的な接続を阻害してしまう傾向にあり、深さが50%を超えると配線導体2が薄くなり、電気抵抗が高くなってしまう傾向がある。従って、凹部5の深さは、配線導体2の厚みに対して5〜50%程度であることが好ましい。   The depth of the recess 5 is preferably about 5 to 50% with respect to the thickness of the wiring conductor 2. If the depth is less than 5% of the thickness of the wiring conductor 2, the thermosetting resin remaining on the wiring conductor 2 cannot be completely removed, and the electrical connection between the through conductor 4 and the wiring conductor 2 is hindered. If the depth exceeds 50%, the wiring conductor 2 becomes thin and the electric resistance tends to increase. Therefore, the depth of the recess 5 is preferably about 5 to 50% with respect to the thickness of the wiring conductor 2.

かくして、本発明の配線基板によれば、配線導体2の貫通孔3の下に位置する領域にこの貫通孔3の直径よりも径の大きな凹部5を形成し、凹部5内を銅めっきにより充填したことから、配線導体2の貫通導体4の下に位置する部分に銅めっきがくさび状に食い込み強固な接続部を形成することができるので、半導体素子等の実装部品を配線基板に搭載した状態で、長期の熱履歴を繰り返し印可した場合の熱応力からくる縦方向の引張応力に充分耐え、断線等のない接続信頼性の高い配線基板とすることができる。   Thus, according to the wiring board of the present invention, the concave portion 5 having a diameter larger than the diameter of the through hole 3 is formed in the region located below the through hole 3 of the wiring conductor 2, and the concave portion 5 is filled with copper plating. As a result, the copper plating can be wedged into the portion located below the through conductor 4 of the wiring conductor 2 to form a strong connection portion, so that mounting parts such as semiconductor elements are mounted on the wiring board. Thus, it is possible to provide a wiring board with high connection reliability that can sufficiently withstand the tensile stress in the vertical direction caused by thermal stress when a long-term thermal history is repeatedly applied, and that is free from disconnection.

なお、本発明は、上述の実施の形態の一例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば、上述の実施例では、第一の絶縁層1cに貫通導体4を形成した例を示したが、第二の絶縁層1bに貫通導体4を形成しても良い。さらに、最外層の絶縁層1cの表面に、半田リフローの際の耐熱性を向上させるために、耐半田樹脂層6を被着形成してもよい。   The present invention is not limited to one example of the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiment, the first embodiment Although the example in which the through conductor 4 is formed in the insulating layer 1c is shown, the through conductor 4 may be formed in the second insulating layer 1b. Furthermore, a solder-resistant resin layer 6 may be deposited on the surface of the outermost insulating layer 1c in order to improve heat resistance during solder reflow.

本発明の配線基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the wiring board of this invention. 図1の配線基板の要部拡大断面図である。It is a principal part expanded sectional view of the wiring board of FIG.

符号の説明Explanation of symbols

1・・・・・・・・・・絶縁層
1a・・・・・・・・・芯体絶縁層
1b・・・・・・・・・第一の絶縁層
1c・・・・・・・・・第二の絶縁層
2・・・・・・・・・・配線導体
3・・・・・・・・・・貫通孔
4・・・・・・・・・・貫通導体
5・・・・・・・・・・凹部
1. Insulating layer 1a ... Core insulating layer 1b ... First insulating layer 1c ... .... Second insulation layer 2 ... Wiring conductor 3 ... Through hole 4 ... Through conductor 5 ... .... Recess

Claims (9)

貫通孔を有する絶縁層と、一部が前記貫通孔内に形成された貫通導体とを具備して成る配線基板であって、
前記貫通導体は、下端部が前記貫通孔の底部を塞ぐとともに前記貫通孔の内壁より外方へ突出した突出部を有していることを特徴とする配線基板。
A wiring board comprising an insulating layer having a through hole, and a through conductor partially formed in the through hole,
The wiring board according to claim 1, wherein the through conductor has a projecting portion whose lower end portion closes a bottom portion of the through hole and projects outward from an inner wall of the through hole.
前記貫通導体は、前記下端部と前記貫通孔内に形成された部位とが一体的に形成されていることを特徴とする請求項1記載の配線基板。   The wiring substrate according to claim 1, wherein the through conductor is integrally formed with the lower end portion and a portion formed in the through hole. 前記絶縁層は樹脂であることを特徴とする請求項1または請求項2記載の配線基板。   The wiring board according to claim 1, wherein the insulating layer is a resin. 前記貫通導体はめっきにより形成されていることを特徴とする請求項1乃至請求項3のいずれかに記載の配線基板。   The wiring substrate according to claim 1, wherein the through conductor is formed by plating. 前記下端部を下方から覆うように接続された配線導体をさらに有することを特徴とする請求項1乃至請求項4のいずれかに記載の配線基板。   The wiring board according to claim 1, further comprising a wiring conductor connected so as to cover the lower end portion from below. 前記配線導体は、前記下端部との接続部が残部よりも薄くなっていることを特徴とする請求項5記載の配線基板。   The wiring board according to claim 5, wherein the wiring conductor has a connection portion with the lower end portion thinner than the remaining portion. 前記配線導体は、表面に凹部が形成されており、該凹部に前記下端部が配置されていることを特徴とする請求項5記載の配線基板。   The wiring board according to claim 5, wherein a concave portion is formed on a surface of the wiring conductor, and the lower end portion is disposed in the concave portion. 前記突出部の上面と前記配線導体の上面とが同一面上に位置することを特徴とする請求項5乃至請求項7のいずれかに記載の配線基板。   The wiring board according to claim 5, wherein an upper surface of the protruding portion and an upper surface of the wiring conductor are located on the same plane. 請求項1乃至請求項8のいずれかに記載の配線基板に電子部品を搭載して成る電子部品搭載構造体。   An electronic component mounting structure formed by mounting an electronic component on the wiring board according to claim 1.
JP2007025599A 2007-02-05 2007-02-05 Wiring substrate and electronic component mounting structure Pending JP2007150348A (en)

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JPH08153783A (en) * 1991-06-28 1996-06-11 Sony Corp Formation of electrically connecting section and manufacture of semiconductor device
JP2000049459A (en) * 1998-07-28 2000-02-18 Matsushita Electric Works Ltd Manufacture of multilayer printed wiring board
JP2000244127A (en) * 1998-12-24 2000-09-08 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2002076618A (en) * 2000-08-23 2002-03-15 Ibiden Co Ltd Method for manufacturing multilayer printed circuit board
JP2003283135A (en) * 2002-03-25 2003-10-03 Kyocera Corp Wiring board

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Publication number Priority date Publication date Assignee Title
JPH08153783A (en) * 1991-06-28 1996-06-11 Sony Corp Formation of electrically connecting section and manufacture of semiconductor device
JP2000049459A (en) * 1998-07-28 2000-02-18 Matsushita Electric Works Ltd Manufacture of multilayer printed wiring board
JP2000244127A (en) * 1998-12-24 2000-09-08 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2002076618A (en) * 2000-08-23 2002-03-15 Ibiden Co Ltd Method for manufacturing multilayer printed circuit board
JP2003283135A (en) * 2002-03-25 2003-10-03 Kyocera Corp Wiring board

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014170819A (en) * 2013-03-01 2014-09-18 Nikon Corp Image pickup unit and image pickup device

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