JP2007150245A - 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス - Google Patents
光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス Download PDFInfo
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- JP2007150245A JP2007150245A JP2006203587A JP2006203587A JP2007150245A JP 2007150245 A JP2007150245 A JP 2007150245A JP 2006203587 A JP2006203587 A JP 2006203587A JP 2006203587 A JP2006203587 A JP 2006203587A JP 2007150245 A JP2007150245 A JP 2007150245A
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Images
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006203587A JP2007150245A (ja) | 2005-11-04 | 2006-07-26 | 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005320623 | 2005-11-04 | ||
| JP2006203587A JP2007150245A (ja) | 2005-11-04 | 2006-07-26 | 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007150245A true JP2007150245A (ja) | 2007-06-14 |
| JP2007150245A5 JP2007150245A5 (enExample) | 2008-04-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006203587A Abandoned JP2007150245A (ja) | 2005-11-04 | 2006-07-26 | 光照射装置、光照射装置の調整方法、結晶化装置、結晶化方法、およびデバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007150245A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043788A (ja) * | 2007-08-06 | 2009-02-26 | Ulvac Japan Ltd | レーザーアニール装置及びレーザーアニール方法 |
| WO2018066172A1 (ja) * | 2016-10-04 | 2018-04-12 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| KR20200024638A (ko) * | 2018-08-28 | 2020-03-09 | 국방과학연구소 | 링크 가용성이 향상된 광 통신 시스템 |
| CN116438480A (zh) * | 2020-11-03 | 2023-07-14 | 株式会社电装 | 光检测装置 |
-
2006
- 2006-07-26 JP JP2006203587A patent/JP2007150245A/ja not_active Abandoned
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043788A (ja) * | 2007-08-06 | 2009-02-26 | Ulvac Japan Ltd | レーザーアニール装置及びレーザーアニール方法 |
| WO2018066172A1 (ja) * | 2016-10-04 | 2018-04-12 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| JP2018060888A (ja) * | 2016-10-04 | 2018-04-12 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| US10658185B2 (en) | 2016-10-04 | 2020-05-19 | The Japan Steel Works, Ltd. | Laser irradiation apparatus, method for manufacturing semiconductor device, and method for operating laser irradiation apparatus |
| TWI716608B (zh) * | 2016-10-04 | 2021-01-21 | 日商日本製鋼所股份有限公司 | 雷射照射裝置、半導體裝置的製造方法以及雷射照射裝置的動作方法 |
| KR20200024638A (ko) * | 2018-08-28 | 2020-03-09 | 국방과학연구소 | 링크 가용성이 향상된 광 통신 시스템 |
| KR102171779B1 (ko) * | 2018-08-28 | 2020-10-29 | 국방과학연구소 | 링크 가용성이 향상된 광 통신 시스템 |
| CN116438480A (zh) * | 2020-11-03 | 2023-07-14 | 株式会社电装 | 光检测装置 |
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