JP2007115797A - Substrate processing apparatus, substrate processing method, program, and recording medium having program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus or the like which can form a Ti silicide film having a more flat and uniform boundary face with an underlying, and can form a contact with lower resistance as a result. <P>SOLUTION: The substrate processing apparatus 100 is provided with a first common conveyance chamber 102 connected to processing chambers 104A-104D in common, and a second common conveyance chamber 120 connected to processing chambers 104E and 104F. The processing chambers 104E, 104F, 104A, 104C, and 104B are provided as a COR processing chamber wherein foreign matters including a natural oxide film on an Si wafer and gas element are chemically reacted with each other to produce a product, a PHT processing chamber to remove the product generated on the Si wafer by heating, a Ti film formation chamber to form a Ti film on the Si surface of the Si wafer, a silicide formation chamber to cause silication reaction between the Ti film and the base so as to form a Ti silicide film, and a TiN film formation chamber to form a TiN film on the Ti silicide film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method, a program, and a recording medium on which a program is recorded, for performing substrate processing for forming an alloy film such as a metal silicide film on a Si-containing surface such as a Si substrate or a metal silicide layer.

  A semiconductor device such as a CMOS transistor has a connection structure including a wiring layer and a substrate and a wiring layer and a wiring layer. Specifically, for example, as shown in FIG. 30, there are a contact hole 20 connected to the p / n impurity diffusion layer (diffusion layer) 10 of the Si substrate (Si wafer) and a via hole 30 connecting the upper and lower wiring layers. Such contacts 20 and via holes 30 are filled with a metal such as tungsten or copper, and are electrically connected to a Si substrate or a wiring layer. In recent years, a barrier film such as a TiN film or a Ti / TiN laminated film is formed on the contact 20 and the via hole 30 before the metal is buried, and the barrier layers 22 and 32 are formed.

  By the way, with the recent high integration of semiconductor devices, especially the contact hole has an extremely large aspect ratio, which is the ratio between the diameter and the depth. For this reason, a CVD (chemical vapor deposition) method with good step coverage is employed to form a barrier layer such as the TiN film as described above.

  Further, in order to reduce the contact resistance with the diffusion layer 10, for example, a material layer such as TiSi (titanium silicide) is interposed between the barrier layer 22 and the diffusion layer 10, so that the barrier layer 22 and the diffusion layer 10 are connected. It is desirable to lower the Schottky barrier based on the work function difference by adjusting the work function at the interface.

CVD-Ti is also used to form such a material layer, for example, the TiSi film 12. For example, in order to form the TiSi film 12, a Ti film is formed at a temperature of about 650 ° C. using TiCl ₄ as a source gas and H ₂ gas as a reducing gas, and a part of the TiSi film 12 is simultaneously formed with a Si substrate. The TiSi film 12 was formed by self-alignment by reaction.

  On the other hand, when a metal film forming process such as barrier layer formation is performed, in order to obtain a good contact resistance, a base surface (for example, a contact hole) which becomes the base of the metal film prior to the metal film forming process is obtained. A treatment is performed to remove foreign matters such as a natural oxide film existing on the bottom (Si surface exposed at the bottom) and an etching residue introduced when the contact hole is formed.

  Such removal of foreign substances has been conventionally performed by wet cleaning treatment with dilute hydrofluoric acid (HF) or the like (see, for example, Non-Patent Document 1). In recent years, as an apparatus for removing a natural oxide film, an apparatus that forms inductively coupled plasma using hydrogen gas, argon gas, or the like has been proposed (see, for example, Patent Documents 1 and 2). In such a wet cleaning process or a process for forming inductively coupled plasma, there is a problem that the Si substrate is exposed to the atmosphere after removing foreign substances, and a natural oxide film is regrown on the Si surface.

  For this reason, in recent years, a substrate processing apparatus is provided with a plurality of processing chambers, in which a foreign substance such as a natural oxide film on the surface of the Si substrate is removed by sputter etching using inductively coupled plasma, and the Si substrate is vacuumed as it is. There has also been proposed a method of carrying a metal film into a separate film forming chamber and continuously performing metal film formation.

JP 2002-124485 A JP 2001-244214 A T. Teraji and S. Hara, "Control of interface states atmetal / 6H-SiC (0001) interfaces", Phys. Rev. B70, 035312 (2004).

  However, as the semiconductor device is further miniaturized, for example, the depth of the impurity diffusion layer 10 becomes shallower and the aspect ratio of the contact hole 20 tends to become larger.

  For this reason, it is difficult to sufficiently clean the Si surface exposed at the bottom of the contact hole in the conventional foreign matter removing method as described above. For example, the natural oxide film is not removed at the bottom of the contact hole. It will remain.

  In the above cleaning method using plasma, if the bias voltage to the Si substrate is increased to sufficiently etch the bottom of the contact hole, the shallow diffusion layer may be damaged by ion bombardment, or the shoulder of the contact hole opening. The part may be shaved and the insulator may adhere to the bottom of the contact hole again.

  As described above, when a metal film is formed on the Si surface of the Si substrate while a foreign material such as a natural oxide film remains on the surface or the foreign material is reattached, the foreign material is in close contact with the Si surface. To prevent unwanted contact. In this state, for example, if the heat treatment temperature is raised in order to advance the silicidation reaction between the metal and Si, the reaction between the metal and the Si surface becomes non-uniform, so that the metal formed between the metal and the Si surface. The roughness of the interface between the silicide and the underlying Si increases. Further, if a metal silicide is formed with the underlying Si simultaneously with the metal film formation as in the prior art, the silicidation reaction cannot be controlled, and the roughness of the interface between the metal silicide and the underlying Si is further increased.

  As described above, when the roughness of the interface between the metal silicide and the underlying Si increases, it becomes impossible to form an interface at a desired position in the diffusion layer 12 and the contact resistance increases. A part of the material penetrates the diffusion layer 12 to increase the leakage current of the junction or break the junction.

  In recent years, a backing technique is used in which a diffusion layer is covered with a metal silicide film such as CoSi or NiSi before the contact hole is formed in order to compensate for the high resistance of the shallow diffusion layer. However, since the backing layer made of these metal silicide films contains Si, a natural oxide film grows on the surface of the backing layer when exposed to the atmosphere. Further, in order to obtain a good contact resistance like the Si surface, it is desirable to remove foreign matters on the surface of the backing layer exposed at the bottom of the contact hole. Furthermore, it is more desirable that the alloy film (for example, Ti—Co film, Ti—Ni film, etc.) formed by the alloying reaction between the metal deposited on the backing layer and the backing layer is alloyed uniformly.

  Therefore, the present invention has been made in view of such a problem, and an object of the present invention is to make the interface between the substrate and the silicon-containing surface exposed in the substrate to be processed (eg, Si substrate) flatter (flat). It is an object of the present invention to provide a substrate processing apparatus and the like that can form a uniform alloy film and thereby can form a contact structure with lower resistance.

  In order to solve the above-described problems, according to one aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate to be processed, a common transfer chamber commonly connected to these processing chambers, and the common transfer A substrate processing apparatus having a vacuum processing apparatus provided with a transport mechanism for transporting the substrate to be processed provided in a chamber, wherein the plurality of processing chambers are on a silicon-containing surface exposed in the substrate to be processed. A foreign matter removal treatment chamber for removing foreign matter, a metal film deposition treatment chamber for supplying a metal-containing source gas onto the substrate to be treated, and forming a metal film on the silicon-containing surface from which the foreign matter has been removed; There is provided a substrate processing apparatus including an alloying chamber for forming an alloy film by heat-treating the substrate to be processed to cause a reaction between the metal film and the silicon-containing surface.

  In this case, the foreign matter removal processing chamber supplies an excitation gas onto the substrate to be processed, and generates a product by chemically reacting the foreign matter on the silicon-containing surface with a gas component of the excitation gas. It is preferable that the apparatus includes two processing chambers: a product generation processing chamber and a product removal processing chamber for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be processed. The alloy film is, for example, a metal silicide film, and the alloying chamber forms a metal silicide film by causing a reaction between the metal film and the silicon-containing surface by, for example, heat-treating the substrate to be processed. This is a silicide formation processing chamber. In this case, the metal film deposition process chamber performs the metal film deposition process within a temperature range (eg, less than 580 ° C.) that does not form a silicide phase of the metal film. The heat treatment of the metal film is preferably performed in a temperature range (for example, 580 ° C. or higher) to the extent that a silicide phase of the metal film is formed.

In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing method for a substrate processing apparatus for forming an alloy film on a silicon-containing surface of a substrate to be processed, which is exposed on the substrate to be processed. A foreign matter removing process for removing foreign matter on the silicon-containing surface, and a metal film for forming a metal film on the silicon-containing surface from which the foreign matter has been removed by supplying a metal-containing source gas onto the substrate to be processed A film forming process, and an alloying process for forming an alloy film by heat-treating the substrate to be processed to cause a reaction between the metal film and the silicon-containing surface;
Is continuously performed in the substrate processing apparatus. A substrate processing method is provided.

  In this case, the foreign matter removing treatment step is for supplying an excitation gas onto the substrate to be processed, and generating a product by chemically reacting the foreign matter on the silicon-containing surface with a gas component of the excitation gas. It is preferable to continuously execute a product generation processing step and a product removal processing step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be processed. The alloy film is, for example, a metal silicide film. In the alloying process, for example, the substrate to be processed is heat-treated to cause a reaction between the metal film and the silicon-containing surface. This is a silicide formation processing step to be formed. In this case, in the metal film deposition process step, the metal film deposition process is performed in a temperature range (for example, less than 580 ° C.) at which the silicide phase of the metal film is not formed. The heat treatment of the metal film is preferably performed in a temperature range (for example, 580 ° C. or higher) to the extent that a silicide phase of the metal film is formed.

  According to such an apparatus or method according to the present invention, the metal film forming process and the silicide forming process can be continuously performed after the foreign substance removing process in the substrate processing apparatus. It is possible to prevent a natural oxide film from being newly formed on the silicon-containing portion of the substrate to be processed before. In this way, the foreign matter on the silicon-containing surface exposed in the substrate to be processed can be reliably removed, so that the uniform alloying (for example, silicidation) of the metal film is hindered by the foreign matter on the silicon-containing surface. Therefore, a metal silicide film having a flat interface with the base can be formed on the silicon-containing surface. As a result, a contact with lower resistance can be formed.

  Further, the metal film forming process includes a step of supplying the metal-containing source gas onto the substrate to be processed to cause an adsorption reaction of the metal film on the silicon-containing surface, and a reducing gas to supply the metal film. It is preferable to form the metal film by repeating the step of reducing the metal film adsorbed on the silicon-containing surface a plurality of times. According to this, the ALD-Ti film forming process can be performed continuously, for example, in a state where there is no foreign object on the silicon-containing surface of the substrate to be processed by the foreign substance removing process. By depositing the Ti film while controlling the atomic arrangement, a flatter and more uniform film can be formed. Furthermore, since the substrate to be processed is heat-treated to cause a silicidation reaction between the Ti film and the underlying silicon, the film thickness uniformity of the Ti silicide film with respect to the silicon-containing surface can be controlled at the atomic level. Further, according to the ALD-Ti film forming process, the film thickness of the Ti film can be freely controlled at the atomic level, so that the film thickness of the Ti silicide film (titanium silicide film) can also be freely controlled.

  In the silicide formation processing chamber, the metal film is preferably completely silicided (silicided). As a result, a metal film that has not been silicided (silicided) does not remain, and a low-resistance contact can be formed. The silicon-containing surface is made of, for example, silicon or metal silicide. The metal is selected from, for example, Ti, Ta, and W.

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate to be processed, a common transfer chamber connected in common to these processing chambers, and this common A substrate processing apparatus having a vacuum processing apparatus provided with a transport mechanism for transporting the substrate to be processed provided in a transport chamber, wherein the plurality of processing chambers supply excitation gas onto the substrate to be processed. The product generation processing chamber for generating a product by chemically reacting the foreign substance on the silicon-containing surface exposed in the substrate to be processed and the gas component of the excitation gas; and heat-treating the substrate to be processed A product removal processing chamber for sublimating and removing the product on the silicon-containing surface, a first metal-containing source gas is supplied onto the substrate to be processed, and the foreign material is removed on the silicon-containing surface. Form a first metal film A first metal silicide film forming process chamber and a first metal silicide film for forming a first metal silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the first metal film and the silicon-containing surface. A forming process chamber; and a second metal film forming process chamber for supplying a second metal-containing source gas onto the substrate to be processed to form a second metal film on the first metal silicide film. A substrate processing apparatus is provided.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing method for a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed. A product generation step for generating a product by supplying an excitation gas and causing a chemical reaction between a foreign substance on the silicon-containing surface exposed in the substrate to be processed and a gas component of the excitation gas; and A product removing step for sublimating and removing the product on the silicon-containing surface by heat treatment, and supplying the first metal-containing source gas onto the substrate to be processed, so that the foreign substance is removed. A first metal film forming step for forming a first metal film on the surface, and a first substrate is heat-treated to cause a silicidation reaction between the first metal film and the silicon-containing surface. Metal silici A first metal silicide forming process for forming a film; and a second metal film for forming a second metal film on the first metal silicide film by supplying a second metal-containing source gas onto the substrate to be processed And a film forming process. A substrate processing method is provided.

  According to such an apparatus or method according to the present invention, the second metal film deposition process can be continuously performed in the substrate processing apparatus without exposing the substrate to be processed to the atmosphere. The adhesion of the second metal film can be further improved, and the strength can be further improved.

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate to be processed, a common transfer chamber connected in common to these processing chambers, and this common A substrate processing apparatus having a vacuum processing apparatus provided with a transport mechanism for transporting the substrate to be processed provided in a transport chamber, wherein the plurality of processing chambers supply excitation gas onto the substrate to be processed. The product generation processing chamber for generating a product by chemically reacting the foreign substance on the silicon-containing surface exposed in the substrate to be processed and the gas component of the excitation gas; and heat-treating the substrate to be processed A product removal processing chamber for sublimating and removing the product on the silicon-containing surface, and a Ti film on the silicon-containing surface from which the foreign matter has been removed by supplying a Ti-containing source gas onto the substrate to be processed Ti film for film formation A film processing chamber; and a Ti silicide formation processing chamber for forming a Ti silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the Ti film and the silicon-containing surface. A substrate processing apparatus is provided.

  According to such an apparatus according to the present invention, a uniform Ti silicide film can be formed on the silicon-containing surface of the substrate to be processed so that the interface with the base is flat (flat) and uniform, thereby further reducing the resistance. It is possible to form a simple contact.

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate to be processed, a common transfer chamber connected in common to these processing chambers, and this common A substrate processing apparatus having a vacuum processing apparatus provided with a transport mechanism for transporting the substrate to be processed provided in a transport chamber, wherein the plurality of processing chambers supply excitation gas onto the substrate to be processed. The product generation processing chamber for generating a product by chemically reacting the foreign substance on the silicon-containing surface exposed in the substrate to be processed and the gas component of the excitation gas; and heat-treating the substrate to be processed A product removal processing chamber for sublimating and removing the product on the silicon-containing surface, and a metal film on the silicon-containing surface from which the foreign matter has been removed by supplying a metal-containing source gas onto the substrate to be processed Metal film A metastable silicide phase formation processing chamber for forming a metastable silicide phase metal silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the metal film and the silicon-containing surface; And a stable silicide phase forming treatment chamber for forming a metal silicide film of a stable silicide phase by causing a silicidation reaction between the metal film and the silicon-containing surface by heat-treating the substrate to be processed. A featured substrate processing apparatus is provided.

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate to be processed, a common transfer chamber connected in common to these processing chambers, and this common A substrate processing apparatus having a vacuum processing apparatus provided with a transport mechanism for transporting the substrate to be processed provided in a transport chamber, wherein the plurality of processing chambers supply excitation gas onto the substrate to be processed. The product generation processing chamber for generating a product by chemically reacting the foreign substance on the silicon-containing surface exposed in the substrate to be processed and the gas component of the excitation gas; and heat-treating the substrate to be processed A product removal processing chamber for sublimating and removing the product on the silicon-containing surface, and a Ti film on the silicon-containing surface from which the foreign matter has been removed by supplying a Ti-containing source gas onto the substrate to be processed Ti film for film formation A film processing chamber, a C49 phase silicide formation processing chamber for forming a C49 phase Ti silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the Ti film and the silicon-containing surface; A substrate processing apparatus comprising: a C54 phase silicide formation processing chamber for forming a C54 phase Ti silicide film by heat-treating a processing substrate to cause a silicidation reaction between the Ti film and the silicon-containing surface. Is provided.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing method for a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed. A product generation processing step for supplying an excitation gas to chemically react foreign matter on the silicon-containing surface exposed on the substrate to be processed and a gas component of the excitation gas to generate a product; and A product removal treatment step for sublimation removal of the product on the silicon-containing surface by heat treatment; and the silicon-containing surface from which the foreign matter has been removed by supplying a metal-containing source gas onto the substrate to be treated A metal film deposition process for depositing a metal film thereon, and heat treatment of the substrate to be treated causes a silicidation reaction between the metal film and the silicon-containing surface, thereby providing a metastable silicide phase gold. A metastable silicide phase forming process for forming a silicide film and a silicidation reaction between the metal film and the silicon-containing surface by heat-treating the substrate to be processed, thereby forming a stable silicide phase metal silicide film And a stable silicide phase forming process step.

  According to such an apparatus or method according to the present invention, a metal silicide film (eg, titanium silicide film) having a desired silicide phase (eg, C49 phase, C54 phase) crystal structure (desired specific resistance) is formed. Can do.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a recording medium storing a program for executing a substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed. And supplying a computer with an excitation gas on the substrate to be processed, and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas. A product generation processing step, a product removal processing step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be processed, and supplying a metal-containing source gas onto the substrate to be processed. A metal film deposition process step for depositing a metal film on the silicon-containing surface from which the foreign matter has been removed; and heat treating the substrate to be treated to contain the metal film and the silicon-containing surface. There is provided a computer-readable recording medium on which a program for continuously executing a silicide formation processing step for forming a metal silicide film by causing a silicidation reaction with the surface in the substrate processing apparatus is provided. The

  In order to solve the above-described problems, according to another aspect of the present invention, there is provided a program for executing a substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed. , Product generation for supplying an excitation gas onto the substrate to be processed, and generating a product by chemically reacting the foreign matter on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas A treatment step, a product removal treatment step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be treated, and supplying a metal-containing source gas on the substrate to be treated, A metal film forming step for forming a metal film on the silicon-containing surface from which foreign substances have been removed, and heat-treating the substrate to be processed, so that the metal film, the silicon-containing surface, By cause silicide reaction, a program for executing the silicide formation process step of forming a metal silicide film, a continuously within the substrate processing apparatus is provided.

  According to the present invention as described above, the foreign substance removal processing (product generation processing, product removal processing), the metal film deposition processing, and the silicide formation processing are continuously executed, thereby exposing the silicon exposed on the substrate to be processed. Since the metal film can be formed and the silicide can be formed in a state where the foreign matter on the containing surface is reliably removed, a uniform metal silicide film with a flatter interface with the base is formed on the silicon-containing surface. Can be formed.

  The substrate processing apparatus may include a plurality of the vacuum processing apparatuses, and the vacuum processing apparatuses may be connected to each other through a path unit. Further, the alloy in this specification includes a silicide (silicide) formed by reacting a deposited metal (for example, Ti) and an underlying layer (for example, silicon), and a deposited metal (for example, Ti) and the underlying layer. An alloy (for example, Ti—Co, Ti—Ni, etc.) formed by reacting with a metal (for example, a metal silicide film) is also included. Further, the foreign matter in the present specification includes, for example, contamination such as etching residue, particles, natural oxide film, and the like.

  As described above, according to the present invention, a uniform metal silicide film having a flat (flat) interface with the base can be formed on the silicon-containing surface of the substrate to be processed, thereby further reducing the contact resistance. Can form.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration Example of Substrate Processing Apparatus According to First Embodiment)
First, a configuration example of a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing an example of a substrate processing apparatus according to the present embodiment. As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of vacuum processing apparatuses (for example, a first vacuum processing apparatus and a second vacuum processing apparatus) that include a common transfer chamber that connects the plurality of processing chambers. .

  The first vacuum processing apparatus includes a first common transfer chamber 102. The first common transfer chamber 102 has a substantially polygonal shape (for example, an irregular heptagon). In the first common transfer chamber 102, a first transfer mechanism 118 having two picks 118 </ b> A and 118 </ b> B for holding the wafer W and capable of bending and stretching and turning is provided. Around the first common transfer chamber 102, a plurality of (for example, four) processing chambers 104A to 104D configured to be evacuated are connected via gate valves 106A to 106D, respectively. A vacuum processing apparatus including the first common transfer chamber 102 and the processing chambers (processing chambers 104A to 104D) connected thereto constitutes an example of the first vacuum processing apparatus.

  In each of the processing chambers 104A to 104D, mounting tables 105A to 105D for mounting a substrate to be processed, for example, a semiconductor wafer (hereinafter also simply referred to as “wafer”) W are provided. Each of the processing chambers 104A to 104D can perform a predetermined process on the wafer W mounted on the mounting tables 105A to 105D, respectively.

  On the other hand, the first vacuum processing apparatus includes a second common transfer chamber 120. Similarly to the first common transfer chamber 102, the second common transfer chamber 120 is also formed in a substantially polygonal shape (for example, an irregular heptagon). The processing chambers 104E and 104F are connected to the two sides of the second common transfer chamber 120 through gate valves 106E and 106F, respectively. Note that the vacuum processing apparatus including the second common transfer chamber 120 and the processing chambers (processing chambers 104E and 104F) connected thereto constitutes an example of the second vacuum processing apparatus.

  Between the first common transfer chamber 102 and the second common transfer chamber 120, a path unit 122 that connects the common transfer chambers 102 and 120 and temporarily holds the wafer W is connected. When the wafer is transferred between the first common transfer chamber 102 and the second common transfer chamber 120, the wafer W is temporarily held in the path unit 122. A gate valve 126 is provided at the junction between the first common transfer chamber 102 and the pass unit 122. By opening and closing the gate valve 126, the common transfer chambers 102 and 120 can be connected and disconnected.

  In the processing chambers 104E and 104F, mounting tables 105E and 105F for holding the wafer W are provided similarly to the other processing chambers 104A to 104D. Further, in the second common transfer chamber 120, similarly to the first common transfer chamber 102, a second transfer mechanism 124 having two picks 124 </ b> A and 124 </ b> B that can be bent and stretched is provided. The second transfer mechanism 124 of the second common transfer chamber 120 is configured to transfer the wafer efficiently by the same operation as that of the first transfer mechanism 118 of the first common transfer chamber 102.

  The second common transfer chamber 120 is connected to a substantially rectangular carrying-side transfer chamber 110 via two load lock chambers 108A and 108B configured to be evacuated. Gate valves 107A and 107B are interposed at connecting portions between the load lock chambers 108A and 108B and the second common transfer chamber 120 and the carry-in transfer chamber 110, respectively.

  In the carry-in transfer chamber 110, for example, three introduction ports 112A to 112C on which a cassette capable of storing a plurality of wafers W is placed, and the wafer W is rotated to optically determine the amount of eccentricity and to perform alignment. 114 are connected.

  In the carry-in side transfer chamber 110, a carry-in side transfer mechanism 116 having two picks 116A and 116B for holding the wafer W and configured to bend, stretch, turn, move up and down and move linearly is provided. A control unit 200 is connected to the substrate processing apparatus 100, and each unit of the substrate processing apparatus 100 is controlled by the control unit 200.

  Note that one of the second common transfer chamber 120 and the two load lock chambers, for example, the transfer port 109A of the connecting portion with the load lock chamber 108A, carries the wafer W exclusively into the second common transfer chamber 120. The transfer port 109B used as a carry-in port and connected to the other load lock chamber 108B is used as a carry-out port for carrying the wafer W out of the second common transfer chamber 120 exclusively.

(Specific example of wafer processing)
Next, wafer processing (substrate processing method) executed by the substrate processing apparatus 100 according to the first embodiment will be described. The substrate processing apparatus 100 processes a Si wafer (Si substrate) 160 having a film structure as shown in FIG. In the Si wafer 160, an interlayer insulating film 164 is formed on a bare substrate 162, a contact hole 165 is formed by etching, and the Si surface 163 is exposed at the bottom of the contact hole 165.

  Here, a case where a Ti silicide film (titanium silicide film) is formed on the Si surface 163 as shown in FIG. 2 will be described as an example. FIG. 3 is a process diagram for explaining the wafer processing according to the first embodiment, and FIG. 4 is an enlarged schematic view of the film structure of the bottom part (A part) of the contact hole in each process shown in FIG. . FIG. 5 shows a comparative example of FIG. 4 in which a Ti film is formed at the same time as a Ti film is formed in a state where a foreign substance 173 such as a natural oxide film adheres again to the Si surface where the bare substrate 172 of the Si wafer 160 is exposed. It is the schematic diagram which expanded the film | membrane structure of the bottom part of this contact hole. FIG. 5A shows a state before the Ti silicide film is formed, and corresponds to FIG. FIG. 5B shows a state after the Ti silicide film is formed, and corresponds to FIG.

  The substrate processing apparatus 100 according to the first embodiment carries in a Si wafer 160 as shown in FIG. 2 and continuously executes the following processes. That is, as shown in FIG. 3A, first, foreign matter removal processing for removing foreign matter (for example, contamination such as etching residue, particles, natural oxide film) on the Si surface 163 is performed. As a result, for example, the bottom of the contact hole (A portion shown in FIG. 3A) becomes a flat and uniform surface free from foreign substances such as a natural oxide film, as shown in FIG. 4A.

Next, Ti silicide film formation processing is continuously performed in the substrate processing apparatus 100 without exposing the Si wafer to the atmosphere. Further, the Ti silicide film forming process according to the first embodiment is performed in two stages, namely, Ti film formation (Ti film formation process) and Ti silicidation (Ti silicide formation process). That is, in the Ti silicide film forming process, as shown in FIG. 3B, first, a Ti-containing source gas such as TiCl ₄ is supplied onto the Si surface 163 from which foreign substances such as a natural oxide film have been removed, to form a Ti film. A Ti film forming process for forming 166 is performed. As a result, for example, the bottom of the contact hole (A portion shown in FIG. 3B) has a flat and uniform interface with the base (here, the Si surface 163 of the bare substrate 162) as shown in FIG. 4B. A Ti film 166 can be formed.

  Subsequently, as shown in FIG. 3C, the Si wafer 160 is heat-treated to cause a silicidation reaction (silicidation reaction) between the Ti film 166 and the underlying layer (Si). A Ti silicide formation process for forming a Ti silicide film on the surface 163 is performed. As a result, for example, the bottom of the contact hole (A portion shown in FIG. 3C) has a flat and uniform interface 161 with the Si (base), that is, the interface 161 with the bare substrate 162, as shown in FIG. 4C. A Ti silicide film 167 can be formed. In this case, since the Ti film 166 is silicided after being formed, the Ti silicide film 167 in which the Ti film 166 is completely silicided can be formed.

  Next, as shown in FIG. 3D, a TiN film forming process for forming a TiN film 168 on the Ti film 166 is performed. Thus, a Ti film 166 and a TiN film barrier film are formed in the contact hole 165 of the Si wafer 160.

  By the way, if the foreign matter on the Si surface of the Si wafer is removed outside the substrate processing apparatus 100 as in the prior art, the Si wafer is formed in the substrate processing apparatus 100 in order to form a Ti silicide film on the Si surface. When taking up, the Si surface is exposed to the atmosphere. For this reason, for example, as shown in FIG. 5A, before the Ti silicide film is formed, foreign matter 173 such as a natural oxide film is newly generated on the bare substrate 172 surface exposed on the Si wafer.

  When the Ti silicide film is formed in such a manner that the foreign substance 173 such as a natural oxide film adheres again to the surface of the bare substrate 172, uniform silicidation (silicidation) of the Ti film is inhibited by the foreign substance 173, and Si (underlying) In other words, the roughness of the interface between the bare substrate 172 and the Ti silicide film 177 increases.

  Furthermore, if a Ti silicide film is formed at the same time as the Ti film is formed as in the prior art, the silicidation reaction (silicide reaction) of the Ti film is likely to proceed rapidly, and the Ti silicide film 177 and the underlying (Si) The roughness of the interface is further increased. For this reason, after the Ti silicide film is formed, as shown in FIG. 5B, the roughness of the interface between the Ti silicide film 177 and its base (Si) increases.

  Further, when the silicidation (silicidation) of the Ti film proceeds rapidly in a non-uniform state in this way, the entire Ti film cannot be completely silicided, and Ti that is not silicided on the Ti silicide film 177 is obtained. There is a risk that the film partially remains. As described above, if a non-silicided Ti film remains, it becomes a factor that hinders contact resistance reduction.

  In contrast, in the first embodiment, as described above, after the foreign substance removal process is performed in the substrate processing apparatus 100, the Ti silicide film is continuously formed in the substrate processing apparatus 100 without exposing the Si wafer to the atmosphere. A forming process is performed. As a result, as shown in FIG. 4A, the Ti silicide film 166 can be formed in a very flat and uniform state on the Si surface 163 of the bare substrate 162 without any foreign matter. Further, the Ti silicide film forming process is executed in two stages, namely, Ti film formation and Ti film silicidation. As a result, as shown in FIG. 4C, after the Ti silicide film is formed, the base (Si), that is, the interface 161 between the bare substrate 162 and the Ti silicide film 166 can be made extremely flat and uniform.

  Thus, according to the first embodiment, a Ti silicide film having an extremely flat interface with the base (Si) and a thin film thickness can be formed, and therefore, it can be applied to a contact of a shallower diffusion layer. That is, even when applied to a contact of a shallow diffusion layer, there is no problem that a part of the Ti silicide film penetrates through the bottom of the diffusion layer to increase the junction leakage current or break the junction.

  Moreover, according to the first embodiment, the interface between the Ti silicide film and its base (Si) can be made extremely flat and uniform, so that the Schottky barrier can be further lowered. Therefore, the contact resistance can be lowered from the viewpoint of the Schottky barrier. Furthermore, according to the first embodiment, a Ti silicide film having a smaller thickness can be formed, so that a contact can be formed at a position shallow from the surface of the diffusion layer and having a high impurity concentration. Accordingly, the contact resistance can be lowered from the viewpoint of the impurity concentration of the diffusion layer.

(Foreign substance removal processing)
Hereinafter, among the above-described process processes, the foreign substance removal process and the Ti silicide film forming process, which are the main process processes of the present invention, will be described in more detail. First, the foreign substance removal process performed as a pre-process of the Ti silicide film formation process will be described. In the first embodiment, a foreign matter removal process that does not use a water component and does not use plasma is executed. This foreign matter removal process includes, for example, a product generation process for generating a product by chemically reacting a foreign substance including a natural oxide film attached to a Si wafer and a gas component, and a product generated on the Si wafer by a heat treatment. It comprises a two-stage process including a product removal process to be removed.

The product generation process is, for example, a COR (Chemical Oxide Removal) process, and the product removal process is, for example, a PHT (Post Heat Treatment) process. In the COR process, foreign substances adhering to the Si wafer, such as an oxide film such as a natural oxide film, and a gas molecule such as ammonia (NH ₃ ) gas and hydrogen fluoride (HF) gas are chemically reacted to produce products (mainly This is a process for generating (NH ₄ ) ₂ SiF ₆ ). The PHT process is a process in which the Si wafer that has been subjected to the COR process is heated, and a product generated on the Si wafer by the chemical reaction of the COR process is vaporized (sublimated) to be removed from the Si wafer.

  As described above, since the COR process and the PHT process, particularly the COR process, can remove foreign matters such as a natural oxide film of the Si wafer without using a water component and without using plasma, the plasmaless etching process and the dry cleaning process. This corresponds to (dry cleaning treatment).

  For example, by using ammonia gas and hydrogen fluoride gas as reaction gases in COR processing and PHT processing, foreign substances such as a natural oxide film are removed using the following chemical reaction.

[Chem chemical reaction formula]
SiO ₂ + 4HF → SiF ₄ + 2H ₂ O ↑
SiF ₄ + 2NH ₃ + 2HF → (NH ₄ ) ₂ SiF ₆

[Chemical reaction formula of PHT treatment]
(NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑ + 2NH ₃ ↑ + 2HF ↑

The COR process and the PHT process using the chemical reaction described above have the following characteristics. In the PHT process, a small amount of N ₂ and H ₂ is also generated.

[Characteristics of COR processing and PHT processing]
(1) The thermal oxide film has a high selectivity (removal rate). Specifically, in the COR process and the PHT process, the selectivity of the thermal oxide film is high, while the selectivity of polysilicon is low. Therefore, the surface layer of the insulating film made of the SiO ₂ film, which is a thermal oxide film, and the natural oxide film and watermark on the pseudo-SiO ₂ layer or silicon surface layer having the same characteristics as the SiO ₂ film can be efficiently removed.

(2) The growth rate of the natural oxide film on the surface of the insulating film from which the surface layer and the pseudo SiO ₂ layer are removed is slow. Specifically, on the Si surface exposed by performing wet etching on the Si wafer, the growth time of a natural oxide film having a thickness of 3 angstroms is approximately 10 minutes, while the COR treatment and PHT are performed on the Si wafer. On the Si surface exposed by the treatment, the growth time of a natural oxide film having a thickness of 3 angstroms is approximately 2 hours or more. Therefore, in the cleaning process by the COR process and the PHT process, a new watermark is not generated, and the growth of the natural oxide film with the passage of time after the cleaning process is suppressed, so that the reliability of the semiconductor device is improved. be able to.

(3) The reaction proceeds in a dry environment. Specifically, water is not used for the reaction in the COR treatment. Further, even if water molecules are generated by the COR process, the COR process is performed in a substantially vacuum state, so that the water molecules are generated in a gas state. Accordingly, since water molecules do not adhere to the Si wafer in the liquid state, a watermark or the like is not generated on the surface of the Si wafer. Further, since the PHT process is performed at a high temperature, a watermark or the like is not generated on the surface of the Si wafer, and OH groups are not arranged on the exposed Si surface of the Si wafer. Therefore, since the surface of the Si wafer is not passivated and becomes hydrophilic, the surface of the Si wafer does not absorb moisture, thereby preventing a reduction in wiring reliability of the semiconductor device. .

(4) The production amount of the product (complex) is relaxed after a predetermined time. Specifically, after a predetermined time has elapsed, the amount of product produced does not increase even if the watermark is continuously exposed to a mixed gas of ammonia gas and hydrogen fluoride gas. The amount of product produced is determined by the parameters of the gas mixture, such as the pressure of the gas mixture and the volumetric flow ratio. Therefore, it is possible to easily control the removal amount of the watermark.

(5) Generation of particles is very small. Specifically, for example, even when natural oxide film removal is performed on 2000 Si wafers, particle adhesion is hardly observed on the processing chamber or the inner wall of the processing chamber. Therefore, there is no occurrence of a short circuit of wiring via particles in the semiconductor device, and the reliability of the semiconductor device can be improved.

  As described above, in the first embodiment, by performing the foreign substance removal process without using the water component and without using the plasma, the adhesion and strength of the film are improved in the Ti film forming process that is subsequently performed. be able to. Moreover, since the plasma is not used in the foreign substance removal process according to the first embodiment, it is possible to prevent the charge-up damage caused by the plasma from being applied to the underlayer of the Ti film, particularly the diffusion layer surface of the Si wafer. Therefore, a film having good contact resistance can be formed.

As the foreign matter removal process in the first embodiment, a process for removing the natural oxide film by dry cleaning using argon plasma is also applicable. In this case, when the surface of the diffusion layer of the Si substrate is damaged by the plasma, there is a possibility that it becomes amorphous nonuniformly. Therefore, if a Ti silicide film is formed at the same time as a Ti film is formed by plasma CVD in that state, the TiSi ₂ crystal of the Ti silicide film becomes non-uniform. Since such non-uniform TiSi ₂ crystals exist relatively sparsely, the specific resistance is high and the contact between the Ti silicide film and the base becomes non-uniform, resulting in an increase in contact resistance.

In this regard, in the first embodiment, since the foreign substance removal process without using plasma is performed as a pre-process, the surface of the diffusion layer of the Si substrate is not damaged by the plasma, so that the uniformity of the TiSi ₂ crystal of the Ti silicide film is further improved. Therefore, a contact with lower resistance can be formed.

  Moreover, by controlling the atomic arrangement (morphology) of the Si surface and interface of the Si substrate by the chemical reaction process by COR processing and PHT processing, unnecessary interface states and the generation of charges accumulated therein are prevented, and interface charges are reduced. It can be controlled precisely. That is, it is possible to uniformly form an ohmic electrode having a flat interface between the Ti silicide film and its base (Si) in the wafer surface. In this way, by forming a flat and uniform Ti silicide film, the height of the Schottky barrier can be made constant and the interface can be made uniform, so that local current flow can be prevented. As a result, it is possible to prevent the occurrence of a leakage current when the transistor manufactured using such a contact is turned off.

(Ti silicide film formation process)
Next, the Ti silicide film forming process will be described. The Ti silicide film forming process in the first embodiment includes the Ti film forming process (first metal film forming process) for forming the Ti film (first film) as described above, and the Ti film and the base. A two-stage process including a Ti silicide formation process (first metal film silicide formation process) in which a silicidation reaction is caused to form Ti silicide is formed.

First, the Ti film forming process will be described. In the Ti film formation process, a Ti film 166 is formed by supplying a Ti-containing source gas such as TiCl ₄ on the Si surface 163 exposed in the Si wafer 160. In this Ti film forming process, only the Ti film is formed, and Ti silicide is formed by the next continuous Ti silicide forming process. For this reason, in the Ti film forming process according to the first embodiment, it is preferable to set the process temperature within a temperature range in which the silicidation reaction does not occur between the Ti film 166 and the base (Si). The temperature range in which the silicidation reaction does not occur between the Ti film 166 and the base (Si) here is a temperature range in which a crystal structure is not formed by the silicidation reaction of the Ti film, specifically, more than the Ti film. This is a temperature range in which a stable silicide phase (for example, a metastable C49 phase or a stable C54 phase of TiSi ₂ ) is not formed.

  Here, the temperature range in which silicidation reaction does not occur between the Ti film and the base (Si) as described above in the Ti film forming process will be described. Here, the optimum temperature range will be considered based on the relationship between the Ti film formation rate and the Si wafer temperature (set temperature) when forming the Ti film on the Si wafer. Specifically, when a Ti film is formed on a Si wafer, if a silicidation reaction occurs between the Ti film and its base (Si), the fact that the film formation rate of the Ti film increases is utilized.

FIG. 6 is a graph showing the relationship between the film formation rate when the Ti film is formed on the Si surface of the Si wafer and the set temperature of the wafer. While supplying TiCl ₄ gas to the Si wafer and supplying H ₂ gas and Ar gas to generate plasma, experiment was carried out to form Ti film every predetermined time (2 min) while changing the set temperature of Si wafer This is a result of detecting the film formation rate for each set temperature of the Si wafer. The film formation rate is calculated based on the film thickness detected by XRF (fluorescence analyzer).

According to the experimental results shown in FIG. 6, it can be seen that the film formation rate in the temperature range of 580 ° C. or higher is higher than the film formation rate in the temperature range of about 500 ° C. to 550 ° C. This is presumed to be because a silicidation reaction between the Ti film and its base (Si) occurs in a temperature range of 580 ° C. or more, and more stable silicide phases (for example, C49 phase and C54 phase of TiSi ₂ ) are formed. Is done. Accordingly, when the set temperature of the Si wafer is in a temperature range less than about 580 ° C., the reaction between the Ti film and the base (Si) does not occur, so that silicide phases (for example, C49 phase and C54 phase of TiSi ₂ ) are formed. Not.

  Therefore, it is preferable to set the process temperature (here, the temperature of the Si wafer) to a temperature range lower than 580 ° C. and perform the Ti film forming process. For example, it is more preferable to set the temperature to 565 ° C. Thereby, a Ti film can be formed without causing a silicidation reaction with the base (Si).

As the Ti film forming process, for example, a CVD-Ti film forming process for forming a Ti film by plasma CVD is performed. As shown in FIG. 7, this CVD-Ti film forming process is performed first by supplying, for example, TiCl ₄ gas as a metal source gas, supplying H ₂ gas and Ar gas as reducing gases, and generating plasma. Are performed at the same time to form a Ti film. Thereafter, if necessary, NH ₃ gas supply, Ar gas supply, H ₂ gas supply, and plasma generation are performed in order to improve adhesion when forming a TiN film in a TiN film formation process described later. At the same time, a nitriding step is performed to nitride the surface of the Ti film.

In the first embodiment, also in the CVD-Ti film forming process, the process temperature (the temperature of the Si wafer) is set to a temperature range lower than 650 ° C. and lower than 580 ° C., and executed. As a result, a CVD-Ti film is formed without forming a silicide phase of the Ti film (for example, C49 phase or C54 phase of TiSi ₂ ), and a Ti silicide film is formed by a subsequent Ti silicide forming process. In addition, a uniform Ti silicide film having a flat interface with the base (Si) can be formed.

In addition, as the Ti film forming process, a TiCl ₄ gas is supplied to cause an adsorption process (a reaction between Ti and Si) of the Ti film on the Si surface of the Si wafer, and a reducing gas is supplied. A Ti film forming process for forming a Ti film, for example, an atomic layered deposition (ALD) technique was used by repeating a reduction process for reducing the Ti film adsorbed on the silicon-containing surface a plurality of times. An ALD-Ti film forming process can also be performed. Also in this case, the process temperature (the temperature of the Si wafer) is set to a temperature range of less than 580 ° C.

  In this way, by separating the Ti film adsorption process and the reduction process separately and repeatedly forming the Ti film, impurities in the film are reduced, so that the silicidation reaction in the subsequent silicide formation process is performed. Stabilize. This makes it possible to form a Ti film having a flat and uniform interface with the base (Si).

  In particular, in the first embodiment, atomic substances such as a natural oxide film are not adhered to the Si surface of the Si wafer by the foreign substance removal process by the COR process and the PHT process, and the atomic process is continuously performed by the ALD-Ti film deposition process. Since the Ti film can be deposited while controlling the arrangement, a flatter and more uniform film can be formed. Furthermore, since the Ti silicide film is formed by heat treating it to cause a silicidation reaction, the film thickness uniformity with respect to the underlying (Si) of the Ti silicide film can be controlled at the atomic level. Further, according to the ALD-Ti film forming process, the film thickness of the Ti film can be freely controlled at the atomic level, so that the film thickness of the Ti silicide film can also be freely controlled.

A specific example of such an ALD-Ti film forming process is shown in FIG. In the process shown in FIG. 8, first, TiCl ₄ gas is supplied for a short time to cause an adsorption reaction, and then the Ar gas supply, the H ₂ gas supply, and the plasma generation are performed and the reduction process is repeated a plurality of times. Then, a film forming process for forming a Ti film is performed. Also in this case, after that, a nitriding step is performed in which NH ₃ gas supply, Ar gas supply, H ₂ gas supply, and plasma generation are performed at the same time as necessary.

Another example of the ALD-Ti film forming process is shown in FIG. In the process the process shown in FIG. 9, after the supply and plasma generation supply and Ar gas supply and TiCl ₄ gas TiCl ₄ gas performed at the same time by adsorption with decomposition of TiCl ₄ gas (resolution), H A film forming process for forming a Ti film is performed by repeating the process of supplying _two gases and performing thermal reduction a plurality of times. Also in this case, after that, a nitriding step is performed in which NH ₃ gas supply, Ar gas supply, H ₂ gas supply, and plasma generation are performed at the same time as necessary.

Further, another example of the ALD-Ti film forming process is shown in FIG. In the process shown in FIG. 10, the supply of TiCl ₄ gas, the supply of TiCl ₄ gas, the supply of Ar gas, and the generation of plasma are performed at the same time to cause the adsorption reaction while decomposing the TiCl ₄ gas while decomposing it. A film forming process for forming a Ti film is performed by repeating a process of plasma reduction by supplying _two gases, supplying Ar gas, and generating plasma at the same time. Also in this case, after that, a nitriding step is performed in which NH ₃ gas supply, Ar gas supply, H ₂ gas supply, and plasma generation are performed at the same time as necessary.

In addition to the above, as the Ti film formation process, an SFD (Sequential Flow Deposition) -Ti film formation is performed in which a Ti film is formed by plasma CVD at a temperature lower than 400 ° C. to 450 ° C. lower than the above 580 ° C. Membrane processing may be performed. In the SFD-Ti film forming process, for example, as shown in FIG. 11, first, supply of TiCl ₄ gas, supply of Ar gas, supply of H ₂ gas, and generation of plasma are performed at the same time to stop supply of TiCl ₄ gas. A film forming process for forming a Ti film is performed by repeating the process a plurality of times. Also in this case, after that, a nitriding step is performed in which NH ₃ gas supply, Ar gas supply, H ₂ gas supply, and plasma generation are performed at the same time as necessary.

Next, a Ti silicide forming process (annealing process) performed continuously after the Ti film forming process will be described. In the Ti silicide formation process, the Si wafer is heat-treated to cause a silicidation reaction between the Ti film 166 and its base (Si) to form a silicide phase of the Ti film (for example, C49 phase and C54 phase of TiSi ₂ ). . Thereby, a Ti silicide film 167 is formed. For this reason, in the Ti silicide formation processing according to the first embodiment, it is preferable to set the process temperature within a temperature range in which a silicidation reaction between the Ti film 166 and its base (Si) occurs. The temperature range in which the silicidation reaction between the Ti film 166 and the underlying layer (Si) occurs here is the temperature range in which the Ti silicide crystal structure is formed by causing the silicidation reaction of the Ti film, specifically, Is a temperature range in which a more stable silicide phase of the Ti film (for example, a metastable C49 phase or a stable C54 phase of TiSi ₂ ) is formed.

Here, the temperature range in which the silicidation reaction between the Ti film and its base (Si) as described above occurs in the Ti silicide formation process will be described. According to the experimental results shown in FIG. 6, a silicidation reaction occurs between the Ti film and the base (Si) in the temperature range of the wafer set temperature of 580 ° C. or more, and a silicide phase of the Ti film is formed. Already explained. Here, FIG. 12 shows an optimum temperature range for forming a more stable silicide phase (for example, a metastable C49 phase and a stable C54 phase of TiSi ₂ ) in a temperature range of 580 ° C. or higher. Consider based on experimental results.

FIG. 12 is a graph showing the relationship between the set temperature of the wafer when the Ti film on the Si surface of the Si wafer is heat-treated, the specific resistance of Ti silicide (eg, TiSi ₂ ), and the uniformity of the specific resistance within the wafer surface. It is a figure. According to the specific resistance graph shown in FIG. 12, it can be seen that the higher the set temperature of the wafer, the lower the resistance because the crystal structure of Ti silicide changes (phase transition). Further, the graph of the in-plane uniformity of specific resistance shown in FIG. 12 represents the in-plane distribution of the crystal structure of Ti silicide. For example, in the vicinity of 630 ° C., since the C49 phase and the C54 phase are mixed, the in-plane uniformity of the specific resistance is increased, and it can be seen that the in-plane distribution is generated.

  According to the graph shown in FIG. 12, in the temperature range of 580 ° C. or higher, a C49 phase that is a metastable silicide phase is formed in the temperature range of 590 ° C. to 610 ° C., and a higher temperature of 640 ° C. to 650 ° C. A silicide phase that is stable in the temperature range and a lower resistance C54 phase is formed.

  Accordingly, the Ti silicide formation process is performed by setting the process temperature (here, the temperature of the Si wafer) within a temperature range of 590 ° C. to 610 ° C. (preferably 600 ° C.), thereby allowing the C49 phase, which is a metastable silicide phase, to be formed. A low-resistance Ti silicide film having a crystal structure is formed.

  Further, the Ti silicide formation process is performed by setting the process temperature (here, the temperature of the Si wafer) in a temperature range of 640 ° C. to 650 ° C. (preferably 650 ° C.), so that a C54 phase crystal that is a stable silicide phase is obtained. A lower resistance Ti silicide film having a structure is formed. Thus, in the Ti silicide formation process, a Ti silicide film having a desired crystal structure (desired specific resistance) can be formed by changing the setting of the process temperature at the time of heat treatment.

  In order to form the C54 phase Ti silicide film by the Ti silicide formation process in the first embodiment, as described above, the heat treatment is performed at a temperature range of 640 ° C. to 650 ° C. Although a Ti silicide film may be formed, it may be formed by a two-stage annealing process in which heat treatment is performed in two stages. That is, first, a C49-phase Ti silicide film is formed by performing heat treatment by setting the process temperature in a temperature range of 590 ° C. to 610 ° C. (eg, 600 ° C.) (first annealing treatment). Subsequently, a C54 phase Ti silicide film may be formed by performing a phase transition by performing a heat treatment in a temperature range of 640 ° C. to 650 ° C. (for example, 650 ° C.). As a result, the C54 phase Ti silicide film can be formed more stably.

(Configuration example of processing chamber)
Next, a configuration example of the processing chamber in the substrate processing apparatus 100 shown in FIG. 1 will be described. The substrate processing apparatus 100 is configured to remove foreign matter such as a natural oxide film on the Si wafer without using a water component and without using plasma, and on the Si surface of the Si wafer subjected to the foreign matter removal processing. A first metal film (for example, Ti film) is formed, and then a silicidation reaction is caused between the first metal film and the base (Si) to form a first metal silicide film (for example, Ti silicide film). 1 metal silicide film forming process (for example, Ti silicide film forming process) and a second metal film forming process (TiN film forming process) for forming a second metal film (for example, TiN film) on the first metal silicide film And can be executed continuously.

  For example, at least three of the processing chambers 104A to 104F are configured as a foreign substance removal processing chamber, a first metal silicide film formation processing chamber, and a second metal film deposition processing chamber, respectively. Among these, the foreign matter removal process is performed in two stages of product generation process (for example, COR process) and product removal process (for example, PHT process). You may comprise with two process chambers of a chamber.

  The first metal silicide film forming process includes a first metal film forming process (for example, a Ti film forming process) for forming a first metal film (for example, a Ti film) and a silicidation of the first metal film. When the first metal silicide formation process (for example, Ti silicide formation process) for forming the first metal silicide film is performed in a separate process chamber, the first metal film formation process chamber and the first metal silicide formation process chamber are performed. The two processing chambers may be configured. Thus, the configuration of each of the processing chambers 104A to 104F is determined according to the processing content executed by the substrate processing apparatus 100.

  Here, for example, after the Si wafer W in which the contact hole is formed is introduced into the substrate processing apparatus 100, the COR processing and the PHT processing as the foreign matter removal processing as described above are continuously performed on the Si wafer W. FIG. 13 shows a configuration example of the processing chamber in the substrate processing apparatus 100 when the Ti film forming process, the Ti silicide forming process, and the TiN film forming process are successively executed.

  In the configuration example shown in FIG. 13, the processing chambers 104A, 104B, and 104C connected to the first common transfer chamber 120 are configured as a Ti film deposition processing chamber, a TiN film deposition processing chamber, and a Ti silicide formation processing chamber, respectively. The processing chambers 104E and 104F connected to the second common transfer chamber 120 are configured as a COR processing chamber and a PHT processing chamber, respectively. Processing in each of the processing chambers 104A to 104C, 104E, and 104F is executed based on a process processing program 364 stored in a program data storage unit 360 provided in an EC (apparatus control unit) 300 of the control unit 200 described later. . That is, the CPU 310 of the EC 300 reads a necessary processing program from the process processing program 364, reads necessary information from the process processing information (for example, process recipe information) 374 stored in the processing data storage unit 370, and executes each processing. Details of the configuration of the control unit 200 will be described later.

(Configuration example of COR processing chamber)
Next, a configuration example of the COR processing chamber will be described with reference to the drawings. The COR processing chamber includes an excited gas reaction processing chamber 400 as shown in FIG. 14, for example. The excited gas reaction processing chamber 400 has a substantially cylindrical processing chamber 411 that is hermetically configured to accommodate the Si wafer W, and a susceptor 412 for horizontally supporting the wafer W is disposed therein. Has been.

  A coolant channel 414 is provided inside the susceptor 412, and the coolant is supplied from the coolant supply source 416 to the coolant channel 414. Then, by passing the coolant through the coolant channel 414, the temperature of the susceptor 412 and thus the temperature of the wafer W can be controlled to, for example, room temperature. Depending on the temperature of the refrigerant and the control temperature, a heater may be provided in the susceptor 412.

  The susceptor 412 is provided with three wafer support pins (not shown) for supporting the wafer W and raising and lowering it so as to be raised and lowered with respect to the surface of the susceptor 412. The wafer support pins and the lifting mechanism thereof are configured in the same manner as that shown in a Ti film forming chamber 600 (see FIG. 16) described later.

  A shower head 420 is provided on the top wall 411 a of the processing chamber 411. The shower head 420 has a two-layer structure of a lower layer portion 421 and an upper layer portion 422. The lower layer portion 421 and the upper layer portion 422 have a first buffer space 423 and a second buffer space 424, respectively.

Upper surface of the upper portion 422 is closed by a lid member 425, HF gas inlet 427 for introducing NH ₃ gas introducing portion 426 and HF gas introducing NH ₃ gas is formed in the lid member 425. The NH ₃ gas introduction part 426 is connected to the first buffer space 423, and the HF gas introduction part 427 is connected to the second buffer space 424 via the gas introduction path 427a. Then, NH ₃ gas discharge holes 428 for discharging NH ₃ gas downward from the first buffer space 423 and HF gas discharge holes 429 for discharging HF gas downward from the second buffer space 424 are formed. Yes.

The above NH ₃ gas inlet 426 is connected to the NH ₃ gas supply source 432 via the NH ₃ gas line 430, NH ₃ gas inlet 426 through the NH ₃ gas line 430 from the NH ₃ gas supply source 432 Is supplied with NH ₃ gas. On the other hand, an HF gas supply source 433 is connected to the HF gas introduction part 427 via an HF gas line 431, and HF gas is supplied from the HF gas supply source 433 to the HF gas introduction part 427 via the HF gas line 431. Supplied. Each gas line is provided with two valves 434 across the mass flow controller 435 and the mass flow controller 435.

NH ₃ gas inlet 426 and HF NH ₃ gas are supplied to the gas inlet portion 427 and HF gas, NH ₃ gas discharging holes 428 and HF gas through the mutually independent paths as described above in the shower head 420 The post-mix type is supplied into the processing chamber 411 completely independently from the discharge hole 429.

  An exhaust pipe 436 is connected to the bottom wall of the processing chamber 411, and an exhaust apparatus 437 including a vacuum pump is connected to the exhaust pipe 436. Then, by operating the exhaust device 437, the inside of the processing chamber 411 can be decompressed to a predetermined degree of vacuum.

  Further, a gate valve G is provided on the side wall of the processing chamber 411, and the Si wafer W is transferred between the adjacent second common transfer chamber 122 with the gate valve G opened. ing.

  In the COR chamber 400 configured as described above, the inside of the processing chamber 411 is exhausted by the exhaust device 437 to a predetermined reduced pressure state, the gate valve G is opened, and the first common in the vacuum state is opened by the second transfer device 124. The Si wafer W is inserted from the transfer chamber 122 into the processing chamber 411 and placed on the susceptor 412. Thereafter, the gate valve G is closed.

In a state where the temperature of the Si wafer W is set to a predetermined temperature by the heater 413 and the refrigerant, the NH ₃ gas supply source 432 and the HF gas supply source 433 are passed through the NH ₃ gas line 430, the HF gas line 431, and the shower head 420. NH ₃ gas and HF gas are separately and independently introduced into the processing chamber 411 at a predetermined flow rate. These gases cause a chemical action on the natural oxide film on the Si surface exposed in the Si wafer W, and for example, (NH ₄ ) ₂ SiF ₆ that can be decomposed by heat is generated. After this processing, the gate valve G is opened, and the Si wafer W is unloaded to the second common transfer chamber 122 by the second transfer device 124. Thereafter, the Si wafer W is carried into the PHT processing chamber and subjected to heat treatment, whereby the reaction components are decomposed and volatilized, and the natural oxide film is removed.

The processing conditions in the excited gas reaction processing chamber 400 are, for example, a pressure of 0.67 to 133.3 Pa, a wafer temperature of 10 to 30 ° C., a gas flow rate of NH ₃ : 10 to 80 mL / min, and HF: 10 to 80 mL. / Min.

(Configuration example of PHT processing chamber)
Next, the PHT processing chamber will be described with reference to the drawings. The PHT processing chamber is constituted by a heat treatment chamber 500 as shown in FIG. 15, for example. The heat treatment chamber 500 includes a substantially cylindrical processing chamber 511 that is hermetically configured to accommodate the wafer W, and a heating plate 512 for placing and heating the Si wafer W in the processing chamber 511. Is provided.

  A heater 523 as a heating means is provided inside the heating plate 522, and the Si wafer W placed thereon is heated. A heater power source 524 is connected to the heater 523.

  The heating plate 522 is provided with three wafer support pins (not shown) for supporting and lifting the Si wafer W so as to protrude and retract with respect to the surface of the heating plate 522. The wafer support pins and the lifting mechanism thereof are configured in the same manner as shown in a Ti film forming apparatus 600 described later.

  As the heating means, not only the heater 523 is provided in the heating plate 522, but a heater may be provided on the ceiling of the processing chamber 511, and a heater may be provided on the side wall. Further, instead of using a heater as the heating means, a lamp may be used.

  An exhaust pipe 515 is connected to the bottom wall of the processing chamber 511, and an exhaust device 516 including a vacuum pump is connected to the exhaust pipe 515. Then, by operating the exhaust device 516, the inside of the processing chamber 511 can be decompressed to a predetermined degree of vacuum.

The side wall of the processing chamber 511 is connected _{N 2} gas supply source 518 via the gas line 517, _{N 2} gas is treated as an inert gas from the _{N 2} gas supply source 518 via the gas line 517 It is introduced into the chamber 511 and heat treatment is performed in an inert gas atmosphere. The gas line 517 is provided with a mass flow controller 520 and two valves 519 sandwiching it. The supplied inert gas is not limited to N ₂ gas, but may be other inert gas such as Ar gas.

  The gate valve G described above is provided on the side wall of the processing chamber 511 so that the Si wafer W can be transferred between the adjacent second common transfer chamber 122 with the gate valve G opened. It has become.

In such a heat treatment chamber 500, the temperature of the Si wafer W is heated to about 100 to 500 ° C. by the heater 513 in a state where N ₂ gas which is an inert gas is introduced into the treatment chamber 511, and the COR processing chamber. A product (for example, (NH ₄ ) ₂ SiF ₆ or the like) generated on the Si surface of the Si wafer W by the treatment in is thermally decomposed, sublimated, and exhausted. In this way, foreign substances such as a natural oxide film on the Si surface of the Si wafer W can be completely removed.

(Configuration example of Ti film deposition chamber)
Next, a configuration example of the Ti film deposition processing chamber will be described with reference to the drawings. The Ti film formation processing chamber is constituted by a plasma CVD processing chamber 600 as shown in FIG. 16, for example, for forming a Ti film by plasma CVD. The plasma CVD processing chamber 600 has a substantially cylindrical processing chamber 611 that is airtight.

  In the processing chamber 611, a susceptor 612 for horizontally supporting the wafer W is disposed in a state of being supported by a cylindrical support member 613 provided at the lower center of the susceptor 612. The susceptor 612 is made of a ceramic such as AlN, and a guide ring 614 for guiding the wafer W is provided on the outer edge thereof.

  A heater 615 is embedded in the susceptor 612, and the heater 615 is heated by the heater power source 616 to heat the wafer W to a predetermined temperature. In the susceptor 612, an electrode 618 functioning as a lower electrode is embedded on the heater 615.

  A shower head 620 is provided on the top wall 611 a of the processing chamber 611 via an insulating member 619. The shower head 620 includes an upper block body 620a, an intermediate block body 620b, and a lower block body 620c. A ring-shaped heater 656 is embedded in the vicinity of the outer periphery of the lower block body 620c. The heater 656 is supplied with power from a heater power source 657, so that the shower head 620 can be heated to a predetermined temperature. ing.

  Discharge holes 627 and discharge holes 628 for discharging gas are alternately formed in the lower block body 620c. A first gas inlet 621 and a second gas inlet 622 are formed on the upper surface of the upper block body 620a.

  In the upper block body 620a, a large number of gas passages 623 branch from the first gas introduction port 621. Gas passages 625 are formed in the middle block body 620b, and the gas passages 623 communicate with these gas passages 625 through communication passages 623a extending horizontally. Further, the gas passage 625 communicates with the discharge hole 627 of the lower block body 620c.

  In the upper block body 620a, a large number of gas passages 624 are branched from the second gas introduction port 622. Gas passages 626 are formed in the middle block body 620b, and the gas passages 624 communicate with the gas passages 626. Further, the gas passage 626 is connected to a communication passage 626a extending horizontally in the middle block body 620b, and the communication passage 626a communicates with a number of discharge holes 628 of the lower block body 620c. The first and second gas inlets 621 and 622 are connected to gas lines 638 and 640 of a gas supply mechanism 630 described later, respectively.

Gas supply mechanism 630, a cleaning gas CIF ₃ gas CIF ₃ gas supply source 631 for supplying, Ti compound TiCl supplying TiCl ₄ gas is a gas ₄ gas supply source 632, supplies the Ar gas first Ar gas supply source 633, a reducing gas at a _{H 2} gas _{H 2} gas supply source 634 for supplying a second Ar gas supply for supplying the NH ₃ gas for supplying the NH ₃ gas supply source 635, Ar gas is a gas nitriding A source 636 is provided.

A CIF ₃ gas supply line 637 is connected to the CIF ₃ gas supply source 631, and a TiCl ₄ gas supply line 638 is connected to the TiCl ₄ gas supply source 632. In addition, a first Ar gas supply line 639 is connected to the first Ar gas supply source 633, and an H ₂ gas supply line 640 is connected to the H ₂ gas supply source 634. Further, the NH ₃ gas supply source 635 is connected to the NH ₃ gas supply line 640a, the second Ar gas supply source 636 is connected to the second Ar gas supply line 640b.

Although not shown, also has N ₂ gas supply source. Each gas line is provided with a mass flow controller 642 and two valves 641 sandwiching the mass flow controller 642.

CIF ₃ gas extending from above the first gas inlet 621 is connected to the TiCl ₄ gas supply line 638 extending from the TiCl ₄ gas supply source 632, CIF ₃ gas supply source 631 to the TiCl ₄ gas supply line 638 A first Ar gas supply line 639 extending from the supply line 637 and the first Ar gas supply source 633 is connected.

In addition, an H ₂ gas supply line 640 extending from an H ₂ gas supply source 634 is connected to the second gas introduction port 622, and the H ₂ gas supply line 640 extends from an NH ₃ gas supply source 635. An NH ₃ gas supply line 640a and a second Ar gas supply line 640b extending from the second Ar gas supply source 636 are connected.

Therefore, when the process, the first gas inlet of the TiCl ₄ gas supply source TiCl ₄ gas from the 632 shower head 620 through the TiCl ₄ gas supply line 638 with Ar gas from the first Ar gas supply source 633 621 From the discharge hole 627 to the process chamber 611 through the gas passages 623 and 625.

Meanwhile, a shower from the second gas inlet port 622 of the shower head 620 through the _{H 2} gas supply gas line 640 _{H 2} gas together with Ar gas from the second Ar gas supply source 636 from the _{H 2} gas supply source 634 The ink reaches the inside of the head 620 and is discharged from the discharge hole 628 into the processing chamber 611 through the gas passages 624 and 626.

Thus, the shower head 620 is a post-mix type in which TiCl ₄ gas and H ₂ gas are supplied into the processing chamber 611 completely independently, and these are mixed and reacted after discharge.

  A high frequency power source 644 is connected to the shower head 620 via a matching unit 659. When film formation is performed, a high frequency power of 450 kHz, for example, is supplied from the high frequency power source 644 to the shower head 620. A high-frequency electric field is generated between 620 and the electrode 618, and the deposition gas supplied into the processing chamber 611 is turned into plasma to form a Ti film.

  A circular hole 645 is formed at the center of the bottom wall 611b of the processing chamber 611, and an exhaust chamber 646 that protrudes downward is provided on the bottom wall 611b so as to cover the hole 645. An exhaust pipe 647 is connected to the side surface of the exhaust chamber 646, and an exhaust device 648 is connected to the exhaust pipe 647. By operating the exhaust device 648, the inside of the processing chamber 611 can be depressurized to a predetermined degree of vacuum.

  The susceptor 612 is provided with three (only two shown) wafer support pins 649 for supporting the Si wafer W to be moved up and down so as to protrude and retract with respect to the surface of the susceptor 612. It is fixed to the support plate 650. The wafer support pins 649 are moved up and down via a support plate 650 by a drive mechanism 651 such as an air cylinder.

  On the side wall of the processing chamber 611, a loading / unloading port 652 for loading / unloading the Si wafer W to / from the first common transfer chamber 102 and a gate valve G for opening / closing the loading / unloading port 652 are provided.

  In forming the Ti film in the processing chamber 611 configured as described above, first, the inside of the processing chamber 611 is evacuated by the exhaust device 648 to a predetermined vacuum state, and the susceptor 612 is set to a predetermined temperature by the heater 615. And the shower head 620 is heated to a predetermined temperature by the heater 656.

In this state, TiCl ₄ gas and Ar gas are supplied from the TiCl ₄ gas supply source 632 and the first Ar gas supply source 633 to the first gas inlet 621 while applying high frequency power from the high frequency power source 644 to the shower head 620. and, _{H 2} gas supply source 634, a second Ar gas supply source 636 to the second gas inlet 622 supplies _{H 2} gas and Ar gas, respectively discharged from the gas discharge holes 627 and 628.

As a result, plasma of these gases is generated in the processing chamber 611, and the inner wall of the processing chamber 611 and the processing chamber members such as the shower head 620 are precoated. The gas flow rates at this time are, for example, about TiCl ₄ gas: 0.001 to 0.02 L / min, H ₂ gas: 1.5 to 4 L / min, Ar gas: about 0.3 to 1.6 L / min. Thereby, when the Ti film is formed on the Si wafer W, the temperature change of the Si wafer W can be made substantially constant.

After such pre-coating process is completed, the supply of TiCl ₄ gas and H ₂ gas and the Ar gas from the first Ar gas supply source 633 and the second Ar gas supply source 636 from the high frequency power source 644 via the shower head 620, respectively. Is gradually introduced into the processing chamber 611 (ramp up), and the inside of the processing chamber 611 is preheated by the heater 615.

  For example, after the preliminary heating is performed for 15 seconds, the supply of Ar gas is stopped, the inside of the processing chamber 611 is suddenly evacuated by the exhausting device 648 to be in a drawing state, the gate valve G is opened, and the vacuum state is set. The Si wafer W is loaded into the processing chamber 611 from the first common transfer chamber 102 via the loading / unloading port 652, and the Si wafer W is placed on the susceptor 612.

Then, a first Ar gas supply source 633, a second Ar gas supply source 637, _{H 2} Ar gas respectively from the gas supply source 632 through the showerhead 620, the _{H 2} gas, the pressure inside of the predetermined processing chamber 611 Then, the flow rate is gradually increased until it reaches (ramp up), and the gas pressure in the processing chamber 611 is gradually increased to suppress warping of the Si wafer W. The final preferable flow rate ranges of these gases are, for example, Ar gas: 0.3 to 3 L / min, H ₂ gas: 1.5 to 6 L / min. In this state, the wafer W is held for a predetermined time, and the wafer W is preheated. This preheating is performed for 14 seconds, for example. The pressure at this time is preferably 260 to 1333 Pa, for example, 667 Pa.

After the preheating of the wafer W is completed, the flow rates of Ar gas and H ₂ gas supplied from the first Ar gas supply source 633, the second Ar gas supply source 636, and the H ₂ gas supply source 634 are maintained. Preflow of TiCl ₄ gas is preferably performed at a flow rate of 0.001 to 0.02 L / min. This preflow is performed for 15 seconds, for example.

  Next, prior to film formation, high-frequency power is applied from the high-frequency power source 644 to the shower head 620 to generate plasma in the processing chamber 611 (pre-plasma). At this time, the power of the high-frequency power source 644 is preferably 300 to 2000 W, for example, 800 W.

Then, while maintaining the same gas flow rate, pressure, and high-frequency power, the TiCl ₄ gas is switched to the processing chamber 611 side, and plasma of Ar gas, N ₂ gas, and TiCl ₄ gas is generated to obtain a predetermined thickness. A Ti film is formed. As described above, the heating temperature of the Si wafer W when the Ti film is formed may be set within a range where no silicification reaction occurs between the Ti film and the underlying Si surface, for example, 580 ° C. or less. This is true. Thus, a thin Ti film is formed on the Si surface while silicidation reaction is suppressed.

After the Ti film is formed, the supply of TiCl ₄ gas and the power supply from the high-frequency power source 644 to the shower head 620 are stopped, and the post-deposition processing is performed while Ar gas and H ₂ gas as other gases are supplied. Do. This post-deposition treatment is performed for 2 seconds, for example. Thereafter, the flow rate of H ₂ gas is reduced, the Ar gas flow rate is maintained, and the processing chamber 611 is purged for 4 seconds, for example.

  Thereafter, a nitriding process is performed in which the surface of the formed Ti film is nitrided continuously in the same processing chamber. The nitriding process is performed in order to prevent the Ti film from being peeled off at the Ti film portion by nitriding the surface of the Ti film to prevent the etching of the Ti film during the next TiN film formation. is there.

As such a nitriding treatment, for example, while maintaining the flow rates of Ar gas and H ₂ gas, NH ₃ gas is preferably flowed at a flow rate of 0.5 to ₃ L / min, for example, 1.5 L / min for a predetermined time, and thereafter The high-frequency power is supplied from the high-frequency power source 644 to the shower head 620 while maintaining the supply of gas, and the plasma is generated from these gases. After a predetermined time has elapsed, the power supply from the high frequency power supply 644 to the shower head 620 is stopped, the gas flow rate and the degree of vacuum are gradually reduced, and the Ti film forming process is terminated. Thereafter, the Si wafer W is carried into a Ti silicide formation processing chamber and heat-treated, whereby a silicidation reaction occurs between the Ti film and the Si surface, and a Ti silicide film is formed on the Si surface.

(Ti silicide formation chamber)
Next, a configuration example of the Ti silicide formation processing chamber will be described. The Ti silicide formation processing chamber is configured by a heat treatment chamber 500 as shown in FIG. 15, for example, similar to the PHT processing chamber. In such a Ti silicide formation processing chamber, a Si wafer on which a Ti film is formed in the Ti film formation processing chamber is carried in, and N ₂ gas as an inert gas is introduced into the processing chamber 511. Then, the temperature of the Si wafer W is heated by the heater 513 at a temperature set in the above temperature range (temperature range in which the silicidation reaction of the Ti film occurs and Ti silicide is formed). Thereby, a Ti silicide film in which the Ti film is completely silicided can be formed on the Si surface.

  The Ti film forming process and the Ti silicide forming process may be continuously performed by switching gases and turning on / off plasma generation in one Ti silicide film forming process chamber. In this case, efficient processing is possible, and a Ti silicide formation processing chamber is not required.

(Configuration example of TiN film deposition chamber)
Next, a configuration example of the TiN film deposition processing chamber will be described with reference to the drawings. The TiN film deposition chamber is configured by a plasma CVD chamber 700 as shown in FIG. 17, for example, in which a TiN film is deposited by plasma CVD. The plasma CVD processing chamber 700 has substantially the same configuration as the plasma CVD processing chamber 600 shown in FIG. 16 except that there is no means for heating the plasma generating means and the shower head, and the gas system of the gas supply mechanism is slightly different. Therefore, the components other than the gas supply mechanism are denoted by the same reference numerals as those in FIG.

Gas supply mechanism 730 is CIF ₃ gas supplied CIF ₃ gas supply source 731, Ti supplying compound TiCl ₄ gas is a gas TiCl ₄ gas supply source 732, _{N 2} gas first supplying a cleaning gas N ₂ gas supply source 733, and a second _{N 2} gas supply source 735 for supplying the NH ₃ gas supply source 734, _{N 2} gas supplied NH ₃ gas is a gas nitriding.

The CIF ₃ gas supply source 731 is connected to a ClF ₃ gas supply line 736, and the TiCl ₄ gas supply source 732 is connected to a TiCl ₄ gas supply line 737. A first N ₂ gas supply line 738 is connected to the first N ₂ gas supply source 733, and an NH ₃ gas supply line 739 is connected to the NH ₃ gas supply source 734. Further, a second N ₂ gas supply line 740 is connected to the second N ₂ gas supply source 735.

  Although not shown, it also has an Ar gas supply source. Each gas supply line is provided with two valves 741 sandwiching the mass flow controller 742 and the mass flow controller 742.

A TiCl ₄ gas supply line 737 extending from a TiCl ₄ gas supply source 732 is connected to the first gas introduction port 621 of the shower head 620, and this TiCl ₄ gas supply line 737 extends from the CIF ₃ gas supply source 731. A CIF ₃ gas supply line 736 and a first N ₂ gas supply line 738 extending from the first N ₂ gas supply source 733 are connected.

In addition, an NH ₃ gas supply line 739 extending from the NH ₃ gas supply source 734 is connected to the second gas introduction port 622, and the second N ₂ gas supply source 735 is connected to the NH ₃ gas supply line 739. A second N ₂ gas supply line 740 extending from is connected.

Therefore, when the process, TiCl ₄ gas is the first gas introduction in the first _{N 2} with _{N 2} gas from the gas supply source 733 through the TiCl ₄ gas supply line 737 showerhead 620 from the TiCl ₄ gas supply source 732 From the port 621, it reaches into the shower head 620, and is discharged from the discharge hole 627 into the processing chamber 611 through the gas passages 623 and 625.

On the other hand, the second gas shower head 620 through the NH ₃ gas supply line 739 NH ₃ gas is a nitriding gas from the NH ₃ gas supply source 734 with _{N 2} gas from the second _{N 2} gas supply source 735 From the inlet 622 to the shower head 620, the gas is discharged from the discharge hole 628 into the processing chamber 611 through the gas passages 624 and 626.

When the TiN film is formed in the processing chamber 611 configured as described above, first, the inside of the processing chamber 611 is pulled out by the exhaust device 648, and the first and second N ₂ gas supply sources 733 and The inside of the processing chamber 611 is preheated by the heater 615 while N ₂ gas is introduced into the processing chamber 611 through the shower head 620 from 735.

When the temperature is stabilized, N ₂ gas, NH ₃ gas, and TiCl ₄ gas are respectively supplied from the first N ₂ gas supply source 733, the NH ₃ gas supply source 734, and the TiCl ₄ gas supply source 732 through the shower head 620. Introduced at a predetermined flow rate, preflow is performed while maintaining the processing chamber pressure at a predetermined value.

  Then, a TiN film is precoated on the inner wall of the processing chamber 611, the inner wall of the exhaust chamber 646, and the surface with the processing chamber inside such as the shower head 620 by heating with the heater 615 while maintaining the same gas flow rate and pressure. Thereby, when the TiN film is formed on the Si wafer W, the temperature change of the Si wafer W can be made substantially constant.

After such pre-coating process is finished, the NH ₃ gas and TiCl ₄ gas are stopped, and the N ₂ gas is purged from the first N ₂ gas supply source 733 and the second N ₂ gas supply source 735 in the processing chamber 611. Then, the inside of the processing chamber 611 is purged, and then N ₂ gas and NH ₃ gas are flowed as necessary to perform nitriding treatment on the surface of the formed TiN thin film. Thereby, the TiN film is de-Cl, residual chlorine in the film can be reduced, and the film can be stabilized.

  Thereafter, the inside of the processing chamber 611 is abruptly evacuated by the exhaust device 648 to bring it into a cut-off state. Then, the wafer W is carried into the processing chamber 611 and the Si wafer W is placed on the susceptor 612.

Then, the first _{N 2} gas supply source 733, the _{N 2} gas and NH ₃ gas through the showerhead 620 from the second _{N 2} gas supply source 735, an NH ₃ gas supply source 734, the processing chamber 611 is a predetermined Introduced to gradually increase until the pressure becomes. The final flow rate of these gases, _{N 2} gas from the first _{N 2} gas supply source 733 and the second _{N 2} gas supply source 735, preferably each 0 · 05~3L / min, NH ₃ gas The pressure is preferably 0.005 to 0.3 L / min, and the processing chamber pressure is about 40 to 670 Pa. In this state, the wafer W is held for a predetermined time, and the wafer W is preheated at 300 to 500 ° C., for example. This preheating is performed for 30 seconds, for example. In this case, since the NH ₃ gas flow rate is heated at a partial pressure lower than that of N ₂ gas, for example, when the base film is oxidized, the incubation is effective.

After completion of the preliminary heating of the Si the wafer W, while maintaining the flow rate of _{N 2} gas supplied from the first _{N 2} gas supply source 733 and the second _{N 2} gas supply source 735, a TiCl ₄ gas supply source 732 Preflow of TiCl ₄ gas is preferably performed at a flow rate of 0.01 to 0.08 L / min. This preflow is performed for 15 seconds, for example.

Then, a first _{N 2} gas supply source 733 and the second _{N 2} purge _N in ₂ gas is introduced into the processing chamber 611 the processing chamber 611 as a purge gas from the gas supply source 735, for example, 6 seconds. At this time, the N ₂ gas flow rates from the first N ₂ gas supply source 733 and the second N ₂ gas supply source 735 are each 1 L / mh, for example. On the other hand, with the purge in the processing chamber 611, the pre-flow is performed with the flow rate of the NH ₃ gas being preferably 0.01 to 0.08 L / min.

Thereafter, the flow rate of the N ₂ gas is reduced to, for example, 0.17 L / min, and when the gas flow rate is stabilized, the TiN film formation is started. First, supplies TiCl ₄ gas, NH ₃ gas, the first _{N 2} gas supply source 733 and the second _{N 2} gas supply source 735 by the carrier to the _{N 2} gas from the processing chamber 611. At this time, since the Si wafer W is heated by the heater 615, a TiN film is formed by thermal CVD (first step). This first step is performed, for example, for 16 seconds.

Thereafter, the TiCl ₄ gas and the NH ₃ gas are stopped, and the flow rates of the N ₂ gas from the first N ₂ gas supply source 733 and the second N ₂ gas supply source 735 are each increased to, for example, 1 L / min. The purge gas is introduced into the processing chamber 611 and the processing chamber 611 is purged. After that, NH ₃ gas is carried by N ₂ gas from the second N ₂ gas supply source 735 and introduced into the processing chamber 611, and the TiN film is annealed and nitrided by N ₂ gas and NH ₃ gas. Perform two steps. This second step is performed for 5 seconds, for example.

The above-described TiCl ₄ gas preflow to the second step are repeated as a single cycle for a plurality of cycles, preferably 3 cycles or more, for example, about 12 to 24 times. At this time, the gas is switched by switching the valve. In this way, a TiN film having a predetermined thickness is formed. The heating temperature of the Si wafer W when forming the TiN film is preferably 300 to 500 ° C., for example, about 450 ° C.

  By forming the TiN film by the alternating gas flow in which the first step and the second step are alternately repeated, the TiN film formed in the first step is efficiently deClerated by the second step annealing. The residual chlorine in the film can be remarkably reduced, and a high-quality TiN film with little residual chlorine and low specific resistance can be formed even at low temperature.

  Thereby, generation | occurrence | production of the crack of a TiN film | membrane can be suppressed, adhesiveness with Ti film | membrane improves, As a result, film | membrane peeling of a TiN film | membrane can be prevented effectively. Further, by setting the thickness of the TiN film to 3 to 50 nm, preferably 5 to 20 nm, it is possible to obtain a TiN film having low contact resistance and excellent barrier properties.

(Specific example of wafer transfer processing)

  Here, the wafer transfer process of the substrate processing apparatus 100 configured as shown in FIG. 13 will be described. In FIG. 13, in the second common transfer chamber 120, the Si wafer W is processed in the order of the processing chambers 104 </ b> E and 104 </ b> F and is stored in the pass unit 122. In the first common transfer chamber 102, the Si wafer W is transferred from the pass section 122 to the process chambers 104A, 104C, and 104B in order and processed. For this reason, the transfer path of the Si wafer W is as shown by a solid line arrow shown in FIG.

  Such wafer transfer processing is executed based on a transfer processing program 362 stored in a program data storage unit 360 (described later) provided in an EC (apparatus control unit) 300 of the control unit 200. That is, the CPU 310 of the EC 300 executes the transfer process of the Si wafer W by reading necessary information from the transfer process information (for example, transfer path information) 372 stored in the process data storage unit 370 and executing the transfer process program 362. To do.

  Here, as an example, it is assumed that the Si wafer W before processing, in which, for example, a contact hole is formed, is taken out from a cassette (including a carrier) installed in the central introduction port 112B, and of the two load lock chambers 108A and 108B. One of the load lock chambers, for example, the load lock chamber 108A, is used for carrying in the Si wafer W before processing, and the other load lock chamber 108B is used for carrying out the processed Si wafer W. Now, it is assumed that the wafers W are accommodated in the processing chambers 104A to 104C, 104E, and 104F, and the respective processes are completed or almost finished.

  First, the transfer process in the carry-in transfer chamber 110 will be described. Assuming that the processed Si wafer W that has been processed in the processing chamber 104D is accommodated in the load lock chamber 108B, the processed Si wafer W is transferred to the transfer path X11 by the loading-side transfer mechanism 116. As shown in FIG. 2, the sheet is conveyed to the central introduction port 112B and accommodated.

  The unprocessed Si wafer W accommodated in the central introduction port 112B is transferred to the orienter 114 as shown by the transfer path X12 by the transfer-side transfer mechanism 116, and after the Si wafer W is aligned here, Then, the Si wafer W after the alignment is accommodated in the other load lock chamber 108A as shown in the conveyance path X13 by the carry-in side conveyance mechanism 116, and is kept waiting. The above operation is repeated every time the processing of the Si wafer W proceeds.

  Next, the transfer process of the wafer W in the second common transfer chamber 120 will be described. First, the processed Si wafer W is picked up in the processing chamber 104B accommodated in the pass section 122 by the second transfer mechanism 124, and placed in the empty load lock chamber 108B as indicated by the transfer path Z11. .

  Next, the processed wafer W is picked up in the processing chamber 104F by the second transfer mechanism 124, and placed in the empty path section 122 as indicated by the transfer path Z12. Subsequently, the wafer W that has been processed in the processing chamber 104E is picked up by the second transfer mechanism 124, and is loaded into the empty processing chamber 104F and placed in the processing chamber 104F as indicated by the transfer path Z13. Start processing with.

  Next, the unprocessed Si wafer W waiting in the load lock chamber 108A is picked up by the second transfer mechanism 124, and is loaded into the empty process chamber 104E as indicated by the transfer path Z14. Then, processing in the processing chamber 104E is started.

  Next, the transfer process of the Si wafer W in the first common transfer chamber 102 will be described. First, the processed Si wafer W accommodated in the processing chamber 104B is picked up by the first transfer mechanism 118, and placed in the empty path section 122 as indicated by the transfer path Y11.

  Next, the processed Si wafer W accommodated in the processing chamber 104C is taken by the first transfer mechanism 118, and is loaded into the empty processing chamber 104B as shown in the transfer path Y12. Processing in the processing chamber 104B is started. Subsequently, the processed Si wafer W accommodated in the processing chamber 104A is picked up by the first transfer mechanism 118, and is loaded into the empty processing chamber 104C as shown by the transfer path Y13. , Processing in the processing chamber 104C is started.

  Next, the Si wafer W transferred from the second common transfer chamber 120 into the pass unit 122 is picked up by the first transfer mechanism 118, and this is transferred into the empty processing chamber 104A as indicated by the transfer path Y14. Carry it in and start processing in the processing chamber 104A.

  When the Si wafer W is loaded / unloaded, among the gate valves 106A to 106C, 106E, 106F, 107A, 107B, 126, the gate valve necessary for loading / unloading the Si wafer W is opened / closed. Then, processing is performed in each of the processing chambers 104E, 104F, 104A, 104C, and 104B, and the above-described operation is repeatedly performed every time the processing of the Si wafer W is completed. Thus, the COR process, the PHT process, the Ti film forming process, the Ti silicide forming process, and the TiN film forming process are successively performed on the unprocessed Si wafer W in which the contact hole is formed.

  Thereby, on the Si surface of the Si wafer W, Ti silicide having a very flat interface with the base (Si) can be formed. In addition to improving the adhesion and strength of the film, it is possible to prevent the base (Si) of the Si wafer W from being charged with plasma-induced charge-up damage. Thus, a film having good contact resistance can be formed.

  The configuration of each of the processing chambers 104A to 104F is not limited to that shown in FIG. For example, any of the processing chambers 104A to 104F may be configured as a COR processing chamber, a PHT processing chamber, a Ti film formation processing chamber, a Ti silicide formation processing chamber, and a TiN film formation processing chamber. Accordingly, the transfer order of the Si wafers is as follows: the COR processing chamber, the PHT processing chamber, the Ti film deposition processing chamber, the Ti silicide formation processing chamber, and the TiN film deposition processing chamber among the processing chambers 104A to 104F. , The order of the processing chambers 104A to 104F is not necessarily required.

  In the first embodiment, the case where one Ti silicide formation processing chamber is provided has been described. However, the present invention is not limited to this, and a plurality of Ti silicide formation processing chambers may be provided according to the process temperature. . For example, a C49 phase Ti silicide formation processing chamber (metastable silicide layer) for forming a C49 phase Ti silicide film which is a metastable silicide phase by performing a heat treatment by setting the process temperature in a temperature range of 590 ° C. to 610 ° C. Phase formation processing chamber) and a C54 phase Ti silicide formation processing chamber for forming a C54 phase Ti silicide film which is a stable silicide phase by performing heat treatment, for example, at a process temperature range of 640 ° C. to 650 ° C. It may be constituted by two of a stable silicide phase formation processing chamber.

  In this case, for example, as shown in FIG. 18, the processing chamber 104C of the substrate processing apparatus 100 may be configured as a C49 phase Ti silicide formation processing chamber, and the processing chamber 104D may be configured as a C54 phase Ti silicide formation processing chamber. . In the substrate processing apparatus 100 having the configuration shown in FIG. 18, for example, when the above-described two-stage annealing process is performed, the transfer process is performed along the transfer path as shown in FIG. The transfer routes X21 to X23 in the carry-in side transfer chamber 110 shown in FIG. 18 and the transfer routes Z21 to Z24 in the second common transfer chamber 120 are the transfer routes X11 to X23 and the second common transfer in the carry-in transfer chamber 110 shown in FIG. Since this is the same as the transfer paths Z11 to Z14 in the chamber 120, the transfer process of the Si wafer W in the first common transfer chamber 102 will be described.

  First, the processed Si wafer W accommodated in the processing chamber 104B is picked up by the first transfer mechanism 118, and is placed in the empty path section 122 as indicated by the transfer path Y21.

  Next, the processed Si wafer W accommodated in the processing chamber 104D is taken by the first transfer mechanism 118, and is loaded into the empty processing chamber 104B as shown in the transfer path Y22. Processing in the processing chamber 104B is started.

  Next, the processed Si wafer W accommodated in the processing chamber 104C is taken by the first transfer mechanism 118, and is loaded into the empty processing chamber 104D as shown in the transfer path Y23. Processing in the processing chamber 104D is started. Subsequently, the processed Si wafer W accommodated in the processing chamber 104A is taken out by the first transfer mechanism 118, and is loaded into the empty processing chamber 104C as shown in the transfer path Y24. , Processing in the processing chamber 104C is started.

  Next, the Si wafer W transferred from the second common transfer chamber 120 into the pass unit 122 is picked up by the first transfer mechanism 118, and is transferred into the empty processing chamber 104A as indicated by a transfer path Y25. Carry it in and start processing in the processing chamber 104A.

  When the Si wafer W is loaded / unloaded, among the gate valves 106A to 106F, 107A, 107B, 126, the gate valve necessary for loading / unloading the Si wafer W is opened / closed. Then, processing is performed in each of the processing chambers 104E, 104F, 104A, 104C, 104D, and 104B, and the above-described operation is repeatedly performed every time the processing of the Si wafer W is completed. Thus, the COR process, the PHT process, the Ti film forming process, the C49 phase Ti silicide forming process, the C54 phase Ti silicide forming process, and the TiN film forming process are continuously performed on the Si wafer W before the processing in which the contact hole is formed. Applied. Thereby, on the Si surface of the Si wafer W, a C54 phase Ti silicide having a very flat and uniform interface with the base (Si) can be formed.

(Configuration example of control unit)
A configuration example of the control unit 200 of the substrate processing apparatus 100 will be described with reference to the drawings. FIG. 19 is a block diagram illustrating a configuration of the control unit (system controller) 200. As shown in FIG. 19, the control unit 200 includes an apparatus control unit (EC) 300 and a plurality of module control units (MC: Module).
Controller) 230A, 230B, 230C..., And a switching hub (HUB) 220 for connecting the EC 300 and each MC 230A, 230B, 230C.

  The control unit 200 is connected from the EC 300 to a manufacturing execution system (MES) 204 that manages the manufacturing process of the entire factory where the substrate processing apparatus 100 is installed, for example, via a LAN (local area network) 202. The MES 204 is configured by a computer, for example. The MES 204 cooperates with the control unit 200 to feed back real-time information related to the process in the factory to a basic business system (not shown), and makes a determination regarding the process in consideration of the burden of the entire factory.

  The EC 300 constitutes a main control unit (master control unit) that controls the overall operation of the substrate processing apparatus 100 by supervising the MCs 230A, 230B, 230C. The switching hub 220 switches MCs 230A, 230B, 230C... As connection destinations of the EC 300 according to a control signal from the EC 300.

  Each of the MCs 230A, 230B, 230C,... Controls the operation of each module such as the first common transfer chamber 102, the processing chambers 104A to 104D, the load lock chambers 108A and 108B, the transfer chamber 110, and the orienter 114 of the substrate processing apparatus 100. A sub-control unit (slave control unit) is configured. Each of the MCs 230A, 230B, 230C,... Is connected to each of the I / O (input / output) modules 236A, 236B, 236C, etc. via the GHOST network 206 by DIST (Distribution) boards 234A, 234B, 234C,. The GHOST network 206 is a network realized by an LSI called GHOST (General High-Speed Optimum Scalable Transceiver) mounted on the MC board of the EC 300. A maximum of 31 I / O modules can be connected to the GHOST network 206. In the GHOST network 206, MC corresponds to the master and the I / O module corresponds to the slave.

  Each of the I / O modules 236A, 236B, 236C,..., Includes a plurality of I / O units 238A, 238A to 238A connected to each component (hereinafter referred to as “end device”) of each module such as the processing chambers 104A to 104D. 238B, 238C..., And transmits a control signal to each end device and an output signal from each end device. For example, examples of the end device of the processing chamber 104 include a mass flow controller that controls the flow rate of the gas introduced into the processing chamber 104, and an APC valve that controls exhaust from the processing chamber 104.

  Also connected to each GHOST network 206 is an I / O board (not shown) that controls input / output of digital signals, analog signals, and serial signals in the I / O units 238A, 238B, 238C.

  Here, a configuration example of the EC 300 shown in FIG. 19 will be described with reference to the drawings. FIG. 20 is a block diagram showing a configuration example of EC300. As shown in FIG. 20, an EC 300 includes a CPU (central processing unit) 310 constituting an EC main body, a RAM (random access memory) 320 provided with a memory area used for various data processing performed by the CPU 310, Display means 330 including a liquid crystal display for displaying an operation screen, a selection screen, etc., input of various data such as process recipe input and editing by an operator, and output of process recipes and process logs to a predetermined storage medium, etc. An input / output unit 340 capable of outputting various data and the like, and an informing unit 350 such as an alarm device (for example, a buzzer) for informing when an abnormality such as electric leakage occurs in the substrate processing apparatus 100 are provided.

  The EC 300 includes a program data storage unit 360 that stores processing programs for executing various processes of the substrate processing apparatus 100, and a processing data storage unit that stores information (data) necessary to execute the processing programs. 370. The program data storage unit 360 and the processing data storage unit 370 are constructed in a storage area such as a hard disk (HDD). The CPU 310 reads necessary programs, data, and the like from the program data storage unit 360 and the processing data storage unit 370 as necessary, and executes various processing programs.

  The CPU 310, the RAM 320, the display means 330, the input / output means 340, the notification means 350, the program data storage means 360, the processing data storage means 370, etc. are connected by a bus line such as a control bus or a data bus. The switching hub 220 and the like are also connected to the bus line.

  Here, a control example of the substrate processing apparatus 100 by the control unit 200 having the above-described configuration will be described. In each of the processing chambers 104A to 104D, for example, when processing such as the above-described COR processing, PHT processing, Ti film formation processing, Ti silicide formation processing, TiN film formation processing is performed on the Si wafer W, EC300 The CPU 310 reads a processing program to be executed from the process processing program 364 of the program data storage unit 360 and executes each process based on the process recipe processing information of the process to be executed from the process processing information 374 of the processing data storage unit 370.

  That is, the CPU 310 performs a desired end device via the MC 230, the GHOST network 206, and the I / O module 236 in the I / O module 236 that controls the switching hub 220 and the processing chambers 104A to 104D according to each processing program. Each process is executed by transmitting a control signal to the.

  In such a control unit (system controller) 200 shown in FIG. 19, a plurality of end devices are not directly connected to the EC 300, but the I / O units connected to the plurality of end devices are modularized to form I / Os. Configure the O module. Since this I / O module is connected to the EC 300 via the MC and the switching hub 220, the communication system can be simplified.

  The control signal transmitted by the CPU 310 of the EC 300 includes the address of the I / O unit connected to the desired end device and the address of the I / O module including the I / O unit. The hub 220 refers to the address of the I / O module in the control signal, and the GHOST of the MC refers to the address of the I / O unit in the control signal, so that the switching hub 220 or the MC inquires the CPU 310 about the destination of the control signal. Thus, smooth transmission of the control signal can be realized.

  As described above, in the substrate processing apparatus 100 according to the first embodiment, foreign substances such as a natural oxide film adhering to the Si wafer are removed by executing the foreign substance removing process (for example, COR process and PHT process) without using plasma. Later, a Ti film can be continuously formed without exposing the Si wafer to the atmosphere, and then Ti silicide can be formed continuously. Therefore, a uniform Ti silicide film with a very flat interface with the base is formed. Can be formed.

  As described above, according to the method according to the first embodiment, a Ti silicide film having a very flat, uniform and thin film thickness can be formed on the Si surface of the Si wafer. It can be applied to the formation of layer contacts. In other words, even if it is applied to the formation of a contact of a shallow diffusion layer, there is a problem that a part of the Ti silicide film penetrates through the bottom of the diffusion layer and junction leakage current increases or the junction is broken. Absent. In addition, since a thinner Ti silicide film can be formed, a contact can be formed at a position where the diffusion layer of the Si wafer is shallow from the surface and has a high impurity concentration. For this reason, a contact with lower resistance can be formed.

  In addition, since the adhesiveness and strength of the film can be improved, it is possible to form a film that does not easily peel off. Further, since the natural oxide film can be removed without using plasma, wiring processing without damage can be performed, and a film having good contact resistance can be formed.

(Experiment confirming the effect of the substrate processing apparatus according to the first embodiment)
The experimental results confirming the effect of wafer processing (substrate processing method) by the substrate processing apparatus 100 according to the first embodiment described above will be described with reference to the drawings. Here, the substrate processing apparatus 100 performed foreign substance removal processing by COR processing and PHT processing on the sample Si wafer surface. Thereafter, without exposing the Si wafer to the atmosphere, the ALD-Ti film forming process shown in FIG. 8 was continuously performed at a process temperature of 565 ° C. to form a Ti film. That is, after a TiCl ₄ gas is supplied for a short time to cause an adsorption reaction, a Ti film is formed by repeating a reduction process by performing Ar gas supply, H ₂ gas supply, and plasma generation a plurality of times. .

A scanning electron microscope (SEM) photograph of the cross section of the sample at this time is shown in FIG. As shown in FIG. 21, according to the wafer processing according to the first embodiment, a Ti film having a very flat and uniform interface with the base (Si) is formed on the exposed Si surface of the Si wafer. We were able to. Although the lower side of the Ti film is formed is TiSi _x film, this is, for example, TiSi _3, TiSi ₄ also occurs at low temperatures, are not TiSi ₂ is formed a more stable silicide phases Absent. The film thickness of the Ti film is 19.0 nm, and the film thickness of the TiSi _x film is 16.7 nm. Therefore, the total film thickness of the Ti film and the TiSi _x film is 35.7 nm.

Thereafter, a Ti silicide formation process was continuously performed at a process temperature of 600 ° C., and the Ti film was silicided (silicided) to form a C49 phase Ti silicide film (TiSi ₂ film). An SEM photograph of a cross section of the sample at this time is shown in FIG. As shown in FIG. 22, according to the wafer processing according to the first embodiment, a C49-phase Ti silicide film having a very flat, uniform and thin film interface with the base (Si) could be formed. . In addition, a Ti silicide film (TiSi ₂ film) in which the Ti film is completely silicided (silicided) could be formed. Note that the thickness of the Ti silicide film shown in FIG. 22 is 52.6 nm.

Further, a Ti silicide formation process was performed at a process temperature of 650 ° C. to cause a phase transition of the Ti silicide phase to form a C54 phase Ti silicide film (TiSi ₂ film). FIG. 23 shows X-ray diffraction profiles of the Ti film, the C49 phase Ti silicide film, and the C54 phase Ti silicide film thus obtained. As shown in FIG. 23, the crystal structures of the Ti film, the C49 phase Ti silicide film, and the C54 phase Ti silicide film formed by the wafer processing according to the first embodiment are the peak intensities of the Ti, C49 phase, and C54 phase, respectively. Was confirmed to be strong.

On the other hand, experimental results when a Ti silicide film is formed by conventional wafer processing will be described as a comparative example. Here, the natural oxide film was removed from the sample Si wafer by wet cleaning using dilute hydrofluoric acid (DHF) or the like outside the substrate processing apparatus. Then, the cleaned sample Si wafer is taken into the substrate processing apparatus, and the TiCl ₄ gas supply, the H ₂ gas supply, the Ar gas supply, and the plasma generation are performed at the same time. Was performed at a process temperature of 650 ° C. to form a Ti film simultaneously with the formation of the Ti film. A SEM photograph of a cross section of the sample at this time is shown in FIG.

  As shown in FIG. 24, in conventional wafer processing, a C49-phase Ti silicide film having a large roughness at the interface with the base (Si) is formed. This is because when a sample Si wafer is taken into the substrate processing apparatus, foreign substances such as a natural oxide film adhere to the Si wafer again, and in this state, a Ti film is formed and silicided at a time. This is presumably because the uniform silicidation of the Ti film is inhibited by the foreign matter 173 on the Si surface of the wafer, and the silicidation of the Ti film has progressed rapidly.

  Compared to the conventional case shown in FIG. 24, the interface between the Ti silicide film formed by the wafer processing (substrate processing method) according to the first embodiment and its base (Si) is shown in FIG. It can be seen that the state of the interface between the Ti silicide film and its base (Si) is greatly improved.

Next, using a sample of another Si wafer, a Ti silicide film formed by the ALD-Ti film forming process according to the first embodiment, a Ti silicide film formed by the conventional CVD-Ti film forming process, and Compare In the ALD-Ti film forming process according to the first embodiment, as shown in FIG. 8, the substrate processing apparatus 100 supplies TiCl ₄ gas for a short time to cause an adsorption reaction, and then supplies Ar gas and H ₂ gas. A Ti film was formed at a process temperature of 565 ° C. by repeating the process of reducing by supplying and plasma generating a plurality of times, and subsequently, a Ti silicide formation process was performed at a process temperature of 600 ° C. An SEM photograph of the surface of the Ti silicide film at this time is shown in FIG. According to the wafer processing according to the first embodiment, a uniform Ti film having a very flat surface can be formed as shown in FIG.

On the other hand, the conventional CVD-Ti film forming process is performed by using a CVD-Ti film process in which TiCl ₄ gas supply, H ₂ gas supply, Ar gas supply, and plasma generation occur at the same time. By performing the process at 650 ° C., a Ti silicide film was formed at the same time as the Ti film was formed. A SEM photograph of the surface of the Ti silicide film at this time is shown in FIG. As shown in FIG. 26, according to the conventional wafer processing, a C49 phase Ti silicide film having a large roughness at the interface with the base (Si) is formed.

  Compared to the conventional case shown in FIG. 26, the surface of the Ti silicide film formed by the ALD-Ti film forming process according to the first embodiment is very flat and uniform as shown in FIG. It can be seen that the state of the surface of the Ti silicide film is also greatly improved.

  Here, the specific resistance of the Ti silicide film formed by the ALD-Ti film forming process according to the first embodiment and the specific resistance of the Ti silicide film formed by the conventional CVD-Ti film forming process are shown. The measurement results are shown in FIG. As shown in FIG. 27, the specific resistance of the Ti silicide film formed by the ALD-Ti film forming process according to the first embodiment is the ratio of the Ti silicide film formed by the conventional CVD-Ti film forming process. It can be seen that it is approximately ½ or more lower than the resistance. Thereby, according to the first embodiment, the state of the interface and surface of the Ti silicide film can be greatly improved as compared with the prior art, and accordingly, the resistance of the Ti silicide film can be further reduced.

(Configuration Example of Substrate Processing Apparatus According to Second Embodiment)
Next, a configuration example of the substrate processing apparatus according to the second embodiment of the present invention will be described with reference to the drawings. FIG. 28 is a schematic configuration diagram illustrating an example of a substrate processing apparatus according to the second embodiment. As shown in FIG. 28, this substrate processing apparatus 101 includes one common transfer chamber 102 formed in a substantially polygonal shape (for example, hexagonal shape) and a plurality of (for example, four) processing chambers configured to be evacuated. 104A to 104D. The configuration of the vacuum processing apparatus in the substrate processing apparatus 101 shown in FIG. 28 is substantially the same as the configuration of the first vacuum processing apparatus in the substrate processing apparatus 100 shown in FIG. The substrate processing apparatus 101 is an example in which one vacuum processing apparatus is connected to the carry-in transfer chamber 110 via two load lock chambers 108A and 108B. The present invention can also be applied to the substrate processing apparatus 101 having such a configuration.

(Configuration example of processing chamber)
Next, a configuration example of the processing chamber in the substrate processing apparatus 101 shown in FIG. 28 will be described. Also in the substrate processing apparatus 101 according to the second embodiment, a foreign matter removal process that does not use plasma for foreign matters such as a natural oxide film on the Si surface of the Si wafer, and a Ti film on the Si surface that has been subjected to the foreign matter removal process. The Ti film forming process for forming Ti and the Ti silicide forming process for forming Ti silicide by causing a silicidation reaction between the Ti film and the base (Si) can be performed continuously.

  One of at least two processing chambers among the processing chambers 104A to 104D is configured as a foreign matter removal processing chamber, and the other two processing chambers are configured as a Ti film forming processing chamber and a Ti silicide forming processing chamber, respectively. In addition, as described above, the foreign substance removal process may be performed in a plurality of stages, for example, a product generation process (COR process) and a product removal process (for example, a PHT process). In this case, two of the processing chambers 104A to 104D are configured as a product generation processing chamber and a product removal processing chamber, respectively.

  Here, FIG. 29 shows a configuration example of a processing chamber in the substrate processing apparatus 101. In the configuration example shown in FIG. 29, the processing chambers 104A, 104B, 104C, and 104D connected to the common transfer chamber 102 are configured as a COR processing chamber, a PHT processing chamber, a Ti film deposition processing chamber, and a Ti silicide formation processing chamber, respectively. Is.

(Wafer transfer processing)
A wafer W transfer process in the substrate processing apparatus 101 configured as shown in FIG. 29 will be described. Since the order of processing in the processing chambers 104A to 104D for the wafer W is performed in the order described above, the transfer path of the wafer W is as shown by a solid line arrow shown in FIG.

  Here, as an example, it is assumed that the pre-process wafer W in which, for example, a contact hole or a via hole is formed is taken out from a cassette (including a carrier) installed in the central introduction port 112B, and one of the two load lock chambers 108A and 108B. One of the load lock chambers, for example, the load lock chamber 108A is used for loading the unprocessed wafer W, and the other load lock chamber 108B is used for unloading the processed wafer W. Now, it is assumed that the wafers W are accommodated in the respective processing chambers 104A to 104D, and the respective processes are finished or almost finished.

  First, the transfer process of the wafer W in the loading-side transfer chamber 110 shown in FIG. 29 is the same as that shown in FIG. In this case, the transport paths X31 to X33 shown in FIG. 29 correspond to the transport paths X11 to X13 shown in FIG.

  Next, wafer transfer processing in the common transfer chamber 102 will be described. First, the processed wafer W accommodated in the processing chamber 104D is picked up by the transfer mechanism 118, and placed in the empty load lock chamber 108B as indicated by the transfer path Y31. Next, the processed wafer W accommodated in the processing chamber 104C is picked up by the transfer mechanism 118, and is loaded into the empty processing chamber 104D as shown in the transfer path Y32, and is set in the processing chamber 104D. Start processing within.

  Subsequently, the processed wafer W accommodated in the processing chamber 104B is picked up by the transfer mechanism 118, and is loaded into the empty processing chamber 104C and placed in the empty processing chamber 104C as indicated by the transfer path Y33. Start processing within. Next, the processed wafer W accommodated in the processing chamber 104A is picked up by the transfer mechanism 118, and is loaded into the empty processing chamber 104B as shown in the transfer path Y34, and is set in the processing chamber 104B. Start processing within.

  Subsequently, the unprocessed wafer W waiting in the load lock chamber 108A is picked up by the transfer mechanism 118, and is loaded into the empty process chamber 104A as shown in the transfer path Y35. Processing in the processing chamber 104A is started. When the wafer W is loaded / unloaded, among the gate valves 106A to 106D, 107A, 107B, a gate valve necessary for loading / unloading the wafer W is opened / closed. The above operation is repeated each time the processing of the wafer W is completed in each of the processing chambers 104A to 104D.

  Thereby, on the Si surface of the Si wafer W, Ti silicide having a very flat interface with the base (Si) can be formed. In addition to improving the adhesion and strength of the film, it is possible to prevent the base (Si) of the Si wafer W from being charged with plasma-induced charge-up damage. Thus, a film having good contact resistance can be formed.

  The configuration of each of the processing chambers 104A to 104D is not limited to that shown in FIG. For example, any of the processing chambers 104A to 104D may be configured as a COR processing chamber, a PHT processing chamber, a Ti film deposition processing chamber, or a Ti silicide formation processing chamber. Accordingly, the transfer order of the Si wafers is not necessarily limited to the processing chambers 104A to 104D if they are transferred in the order of the COR processing chamber, the PHT processing chamber, the Ti film deposition processing chamber, and the Ti silicide formation processing chamber among the processing chambers 104A to 104D. The order may not be 104D.

  In addition to the processing chambers 104A to 104D, another processing chamber may be added and connected to the common transfer chamber 102, and the processing chamber may be configured as a TiN film deposition processing chamber. According to this, the Si wafer on which the Ti silicide formation process has been completed can be transferred to the TiN film formation process chamber, and the TiN film formation process can also be executed continuously.

  The present invention described in detail in the first or second embodiment may be applied to a system constituted by a plurality of devices or an apparatus constituted by one device. A medium such as a storage medium storing software programs for realizing the functions of the above-described embodiments is supplied to the system or apparatus, and the computer (or CPU or MPU) of the system or apparatus is stored in the medium such as the storage medium. It goes without saying that the present invention can also be achieved by reading and executing the program.

  In this case, the program itself read from the medium such as a storage medium realizes the functions of the above-described embodiment, and the medium such as the storage medium storing the program constitutes the present invention. Examples of the medium such as a storage medium for supplying the program include a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, and a DVD-RAM. , DVD-RW, DVD + RW, magnetic tape, non-volatile memory card, ROM, or network download.

  Note that by executing the program read by the computer, not only the functions of the above-described embodiments are realized, but also an OS or the like running on the computer is part of the actual processing based on the instructions of the program. Alternatively, the case where the functions of the above-described embodiment are realized by performing all the processing and the processing is included in the present invention.

  Furthermore, after a program read from a medium such as a storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the function is determined based on the instructions of the program. The present invention also includes a case where the CPU or the like provided in the expansion board or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

For example, in the above embodiment, the case where a TiSi ₂ film, which is an alloy film, is formed as the Si-containing surface on the Si surface of the Si wafer has been described. However, the present invention is not limited to this, and the Si-containing surface is formed on the Si wafer. An alloy film may be formed on the polysilicon (poly-Si) formed on the metal layer, or an alloy film may be formed on the metal silicide film. For example, when the diffusion layer is covered with a backing layer made of a metal silicide film such as CoSi or NiSi, an alloy film (for example, a Ti—Co film, a Ti—Ni film) is formed on the backing layer (metal silicide film) as a base. Etc.) may be formed.

In the above embodiment, the case where TiCl ₄ gas is used as the metal-containing source gas has been described as an example. However, the present invention is not limited to this, and any Ti-containing source gas may be used. . For example, TDMAT (dimethylaminotitanium), TDEAT (diethylaminotitanium), or the like can be used as the organic titanium.

  Furthermore, in the above embodiment, the case where the titanium silicide film is formed using the Ti-containing source gas as the metal-containing source gas has been described as an example. However, the present invention is not limited to this. For example, Ni, Co, Pt, Mo The same effect can be obtained when a silicide film of these metals is formed using a metal-containing source gas such as Ta, Hf, or Zr.

  The present invention is applicable to, for example, a substrate processing apparatus, a substrate processing method, a program, and a recording medium recording a program for performing a substrate processing for forming a metal silicide film on a Si-containing surface such as a surface of a Si wafer or a metal silicide layer. is there.

It is sectional drawing which shows the structural example of the substrate processing apparatus concerning 1st Embodiment of this invention. It is a schematic diagram which shows the specific example of the film | membrane structure of Si wafer in the embodiment. FIG. 4 is a process diagram for describing wafer processing according to the same embodiment. It is the schematic diagram which expanded the film | membrane structure of the bottom part (A part) of the contact hole in each process shown in FIG. It is the schematic diagram which expanded the film | membrane structure of the bottom part (A part) of the contact hole about the comparative example of FIG. It is the figure which showed the relationship between the film-forming rate at the time of forming a Ti film | membrane on Si surface of Si wafer, and the preset temperature of a wafer with a graph. It is a figure which shows one example of the gas supply aspect in the CVD-Ti film | membrane film forming process as a specific example of Ti film | membrane film forming process. It is a figure which shows one example of the gas supply aspect in the ALD-Ti film | membrane film-forming process as a specific example of Ti film | membrane film-forming process. It is a figure which shows the other example of the gas supply aspect in the ALD-Ti film | membrane film-forming process as a specific example of Ti film | membrane film-forming process. It is a figure which shows the further another example of the gas supply aspect in the ALD-Ti film film-forming process as a specific example of Ti film-forming process. It is a figure which shows one example of the gas supply aspect in the SFD-Ti film | membrane film-forming process as a specific example of Ti film | membrane film-forming process. FIG. 6 is a graph showing a relationship between a set temperature of a wafer when a Ti film on the Si surface of the Si wafer is heat-treated, a specific resistance of Ti silicide, and uniformity of the specific resistance within the wafer surface. It is a figure which shows the structural example of the process chamber in the substrate processing apparatus shown in FIG. It is sectional drawing which shows the structural example of the COR processing chamber concerning the embodiment. It is sectional drawing which shows the structural example of the PHT processing chamber concerning the embodiment. It is sectional drawing which shows the structural example of the Ti film | membrane film-forming process chamber concerning the embodiment. It is sectional drawing which shows the structural example of the TiN film | membrane film-forming process chamber concerning the embodiment. It is a figure which shows the other structural example of the process chamber in the substrate processing apparatus shown in FIG. It is a block diagram which shows the structural example of the control part (system controller) shown in FIG. It is a block diagram which shows the structural example of EC (apparatus control part) in the embodiment. It is a figure which shows the scanning electron microscope (SEM) photograph of the cross section of Ti film | membrane formed by the wafer process concerning this embodiment. It is a diagram showing a scanning electron microscope (SEM) photograph of a cross section of the C49 phase Ti silicide film formed by wafer processing according to the present embodiment (TiSi ₂ film). Ti film formed by wafer processing according to the present embodiment, C49-phase Ti silicide film (TiSi ₂ film) is a diagram showing an X-ray diffraction profile of the C54 phase Ti silicide film (TiSi ₂ film). It is a diagram showing a scanning electron microscope (SEM) photograph of a cross section of the C49 phase Ti silicide film formed by a conventional wafer processing (TiSi ₂ film). It is a diagram showing a scanning electron microscope (SEM) photograph of the surface of the C49-phase Ti silicide film formed by wafer processing according to the present embodiment (TiSi ₂ film). It is a diagram showing a scanning electron microscope (SEM) photograph of the surface of the C49-phase Ti silicide film formed by a conventional wafer processing (TiSi ₂ film). The figure which shows the measurement result of the specific resistance of Ti silicide film | membrane formed by the ALD-Ti film film-forming process concerning this embodiment, and the specific resistance of Ti silicide film | membrane formed by the conventional CVD-Ti film | membrane film-forming process. It is. It is sectional drawing which shows the structural example of the substrate processing apparatus concerning 2nd Embodiment of this invention. It is a figure which shows the structural example of the process chamber in the substrate processing apparatus shown in FIG. It is a schematic diagram which shows the wiring structure of a semiconductor device.

Explanation of symbols

100, 101 Substrate processing apparatus 102 First common transfer chamber 104 (104A-104F) Processing chamber 105 (105A-105F) Mounting table 106A-106F Gate valve 107A, 107B Gate valve 108 (108A, 108B) Load lock chamber 109 (109A) , 109B) Transfer port 110 Carry-in side transfer chamber 112 (112A to 112C) Introduction port 112B Introduction port 114 Orienter 116 Carry-in side transfer mechanism 116A, 116B Pick 118 First transfer mechanism 118A, 118B Pick 120 Second common transfer chamber 122 Pass section 124 Second transport mechanism 124A, 124B Pick 126 Gate valve 160 Si wafer (silicon wafer)
161 Interface 162 Bare substrate 163 Si surface 164 Interlayer insulating film 165 Contact hole 166 Ti silicide film (titanium silicide film)
172 Bare substrate 173 Foreign material 177 Ti silicide film 200 Control unit (system controller)
300 EC (device control unit)
310 CPU
320 RAM
330 Display means 340 Input / output means 350 Notification means 360 Program data storage means 362 Transfer processing program 364 Process processing program 370 Processing data storage means 374 Process processing information 400 Excitation gas reaction processing chamber 500 Heat treatment chamber 600 Plasma CVD processing chamber 700 Plasma CVD processing Chamber W Wafer (Si wafer)

Claims (28)

A plurality of processing chambers for performing predetermined processing on the substrate to be processed; a common transfer chamber commonly connected to these processing chambers; and a transfer mechanism for transferring the substrate to be processed provided in the common transfer chamber; A substrate processing apparatus having a vacuum processing apparatus comprising:
The plurality of processing chambers are:
A foreign matter removal treatment chamber for removing foreign matter on the silicon-containing surface exposed in the substrate to be treated;
A metal film forming process chamber for supplying a metal-containing source gas onto the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
A substrate processing apparatus comprising: an alloying processing chamber for forming an alloy film by heat-treating the substrate to be processed to cause a reaction between the metal film and the silicon-containing surface. The foreign matter removal processing chamber is
A product generation processing chamber for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting the foreign matter on the silicon-containing surface with a gas component of the excitation gas;
2. The substrate according to claim 1, comprising two treatment chambers, a product removal treatment chamber for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be treated. Processing equipment. The alloy film is a metal silicide film,
The alloying chamber is a silicide formation chamber in which a metal silicide film is formed by heat-treating the substrate to be processed to cause a reaction between the metal film and the silicon-containing surface. 3. The substrate processing apparatus according to 1 or 2. The metal film deposition processing chamber performs the metal film deposition process in a temperature range in which a silicide phase of the metal film is not formed,
The substrate processing apparatus according to claim 3, wherein the silicide formation processing chamber executes the heat treatment of the metal film in a temperature range in which a silicide phase of the metal film is formed. The metal film deposition processing chamber executes the metal film deposition process in a temperature range of less than 580 ° C.,
The substrate processing apparatus according to claim 3, wherein the silicide forming chamber performs a heat treatment of the metal film in a temperature range of 580 ° C. or more. The metal film deposition processing chamber supplies the metal-containing source gas onto the substrate to be processed to cause an adsorption reaction of the metal film on the silicon-containing surface, and supplies a reducing gas to the silicon The substrate processing apparatus according to claim 3, wherein the metal film is formed by repeating a step of reducing the metal film adsorbed on the containing surface a plurality of times. The substrate processing apparatus according to claim 3, wherein the silicide forming chamber completely silicides the metal film. The substrate processing apparatus according to claim 1, wherein the silicon-containing surface is made of silicon or metal silicide. The substrate processing apparatus according to claim 1, wherein the metal is selected from Ti, Ta, and W. The substrate processing apparatus according to claim 1, wherein a plurality of the vacuum processing apparatuses are provided, and the vacuum processing apparatuses are connected to each other through a path unit. A plurality of processing chambers for performing predetermined processing on the substrate to be processed; a common transfer chamber commonly connected to these processing chambers; and a transfer mechanism for transferring the substrate to be processed provided in the common transfer chamber; A substrate processing apparatus having a vacuum processing apparatus comprising:
The plurality of processing chambers are:
A product generation processing chamber for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas. When,
A product removal treatment chamber for heat-treating the substrate to be treated to sublimate and remove the product on the silicon-containing surface;
A first metal film forming process chamber for supplying a first metal-containing source gas onto the substrate to be processed and forming a first metal film on the silicon-containing surface from which the foreign matters have been removed;
A first metal silicide formation treatment chamber for forming a first metal silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the first metal film and the silicon-containing surface;
A substrate comprising: a second metal film deposition processing chamber for supplying a second metal-containing source gas onto the substrate to be treated and depositing a second metal film on the first metal silicide film. Processing equipment. The substrate processing apparatus according to claim 11, comprising a plurality of the vacuum processing apparatuses, wherein each of the vacuum processing apparatuses is connected to each other through a pass unit. A plurality of processing chambers for performing predetermined processing on the substrate to be processed; a common transfer chamber commonly connected to these processing chambers; and a transfer mechanism for transferring the substrate to be processed provided in the common transfer chamber; A substrate processing apparatus having a vacuum processing apparatus comprising:
The plurality of processing chambers are:
A product generation processing chamber for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas. When,
A product removal treatment chamber for heat-treating the substrate to be treated to sublimate and remove the product on the silicon-containing surface;
A Ti film forming process chamber for supplying a Ti-containing source gas onto the substrate to be processed and forming a Ti film on the silicon-containing surface from which the foreign matters have been removed;
A substrate processing apparatus comprising: a Ti silicide formation processing chamber for forming a Ti silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the Ti film and the silicon-containing surface. The substrate processing apparatus according to claim 13, comprising a plurality of the vacuum processing apparatuses, wherein each of the vacuum processing apparatuses is connected to each other through a pass unit. A plurality of processing chambers for performing predetermined processing on the substrate to be processed; a common transfer chamber commonly connected to these processing chambers; and a transfer mechanism for transferring the substrate to be processed provided in the common transfer chamber; A substrate processing apparatus having a vacuum processing apparatus comprising:
The plurality of processing chambers are:
A product generation processing chamber for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas. When,
A product removal treatment chamber for heat-treating the substrate to be treated to sublimate and remove the product on the silicon-containing surface;
A metal film forming process chamber for supplying a metal-containing source gas onto the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
A metastable silicide phase formation processing chamber for forming a metal silicide film of a metastable silicide phase by heat-treating the substrate to be treated to cause a silicidation reaction between the metal film and the silicon-containing surface;
A stable silicide phase forming treatment chamber for forming a metal silicide film of a stable silicide phase by causing a silicidation reaction between the metal film and the silicon-containing surface by heat-treating the substrate to be processed; Substrate processing apparatus. The substrate processing apparatus according to claim 15, comprising a plurality of the vacuum processing apparatuses, wherein the vacuum processing apparatuses are connected to each other through a path unit. A plurality of processing chambers for performing predetermined processing on the substrate to be processed; a common transfer chamber commonly connected to these processing chambers; and a transfer mechanism for transferring the substrate to be processed provided in the common transfer chamber; A substrate processing apparatus having a vacuum processing apparatus comprising:
The plurality of processing chambers are:
A product generation processing chamber for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas. When,
A product removal treatment chamber for heat-treating the substrate to be treated to sublimate and remove the product on the silicon-containing surface;
A Ti film forming process chamber for supplying a Ti-containing source gas onto the substrate to be processed and forming a Ti film on the silicon-containing surface from which the foreign matters have been removed;
A C49-phase silicide formation processing chamber for forming a C49-phase Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface;
And a C54 phase silicide formation processing chamber for forming a C54 phase Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface. Processing equipment. The substrate processing apparatus according to claim 17, comprising a plurality of the vacuum processing apparatuses, wherein each of the vacuum processing apparatuses is connected to each other through a path unit. A substrate processing method of a substrate processing apparatus for forming an alloy film on a silicon-containing surface of a substrate to be processed,
A foreign matter removing process for removing foreign matter on the silicon-containing surface exposed in the substrate to be treated;
A metal film forming process for supplying a metal-containing source gas on the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
An alloying process for forming an alloy film by heat-treating the substrate to be treated to cause a reaction between the metal film and the silicon-containing surface;
Is continuously executed in the substrate processing apparatus. The foreign matter removing process includes
A product generation processing step for supplying an excitation gas onto the substrate to be processed, and generating a product by chemically reacting the foreign matter on the silicon-containing surface with a gas component of the excitation gas;
20. The substrate processing method according to claim 19, wherein a product removal processing step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be processed is continuously performed. The alloy film is a metal silicide film,
The alloying treatment step is a silicide formation treatment step of forming a metal silicide film by heat-treating the substrate to be treated to cause a reaction between the metal film and the silicon-containing surface. The substrate processing method according to 19 or 20. In the metal film deposition process step, the metal film deposition process is performed in a temperature range in which a silicide phase of the metal film is not formed,
The substrate processing method according to claim 21, wherein the silicide formation processing step performs the heat treatment of the metal film in a temperature range in which a silicide phase of the metal film is formed. In the metal film deposition process step, the metal film deposition process is performed in a temperature range of less than 580 ° C.
The substrate processing method according to claim 21, wherein in the silicide formation processing step, the heat treatment of the metal film is performed in a temperature range of 580 ° C or higher. The metal film deposition process includes supplying the metal-containing source gas onto the substrate to be processed to cause an adsorption reaction of the metal film on the silicon-containing surface, and supplying a reducing gas to the silicon The substrate processing method according to claim 21, wherein the metal film is formed by repeating the step of reducing the metal film adsorbed on the containing surface a plurality of times. A substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed,
A product generating step for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas; ,
A product removal step for subliming and removing the product on the silicon-containing surface by heat-treating the substrate to be treated;
A first metal film forming step of supplying a first metal-containing source gas on the substrate to be processed and forming a first metal film on the silicon-containing surface from which the foreign matters have been removed;
A first metal silicide formation process for forming a first metal silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the first metal film and the silicon-containing surface;
And a second metal film forming step of supplying a second metal-containing source gas onto the substrate to be processed and forming a second metal film on the first metal silicide film. Method. A substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed,
A product generation processing step for supplying an excitation gas onto the substrate to be processed and generating a product by causing a chemical reaction between a foreign substance on the silicon-containing surface exposed on the substrate to be processed and a gas component of the excitation gas; ,
A product removal treatment step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be treated;
A metal film forming process for supplying a metal-containing source gas on the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
A metastable silicide phase forming treatment step of forming a metastable silicide phase metal silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the metal film and the silicon-containing surface;
And a stable silicide phase forming treatment step of forming a stable silicide phase metal silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the metal film and the silicon-containing surface. Substrate processing method. A recording medium storing a program for executing a substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed,
Computer
A product generation processing step for supplying an excitation gas onto the substrate to be processed, and generating a product by chemically reacting a foreign substance on the silicon-containing surface exposed on the substrate to be processed with a gas component of the excitation gas; ,
A product removal treatment step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be treated;
A metal film forming process step of supplying a metal-containing source gas on the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
A silicide forming step of forming a metal silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the metal film and the silicon-containing surface;
A computer-readable recording medium having recorded thereon a program for continuously executing the program in the substrate processing apparatus. A program for executing a substrate processing method of a substrate processing apparatus for forming a metal silicide film on a silicon-containing surface of a substrate to be processed,
Computer
A product generation process for supplying an excitation gas onto the substrate to be processed and generating a product by chemically reacting the foreign matter on the silicon-containing surface exposed on the substrate to be processed with the gas component of the excitation gas. Steps,
A product removal treatment step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be treated;
A metal film forming process step of supplying a metal-containing source gas on the substrate to be processed and forming a metal film on the silicon-containing surface from which the foreign matters have been removed;
A silicide forming step of forming a metal silicide film by heat-treating the substrate to be processed to cause a silicidation reaction between the metal film and the silicon-containing surface;
For continuously executing the program in the substrate processing apparatus.