JP2007115797A5 - - Google Patents

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Publication number
JP2007115797A5
JP2007115797A5 JP2005303940 JP2005303940A JP2007115797A5 JP 2007115797 A5 JP2007115797 A5 JP 2007115797A5 JP 2005303940 JP2005303940 JP 2005303940 JP 2005303940 A JP2005303940 A JP 2005303940A JP 2007115797 A5 JP2007115797 A5 JP 2007115797A5
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JP
Japan
Prior art keywords
film
silicon
substrate
forming
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005303940
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Japanese (ja)
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JP5046506B2 (en
JP2007115797A (en
Publication date
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Priority to JP2005303940A priority Critical patent/JP5046506B2/en
Priority claimed from JP2005303940A external-priority patent/JP5046506B2/en
Publication of JP2007115797A5 publication Critical patent/JP2007115797A5/ja
Publication of JP2007115797A publication Critical patent/JP2007115797A/en
Application granted granted Critical
Publication of JP5046506B2 publication Critical patent/JP5046506B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (10)

  1. A substrate processing method of a substrate processing apparatus for forming a Ti alloy film on a silicon-containing surface of a substrate to be processed,
      A foreign matter removal treatment step of removing the foreign matter on the silicon-containing surface without using a plasma without making the silicon-containing surface exposed in the substrate to be treated amorphous;
      A Ti film forming process in which the temperature of the substrate to be processed is set to a temperature range in which reaction between Ti and the silicon-containing surface does not occur, and a Ti-containing source gas is supplied to the silicon-containing surface to form a Ti film. Process,
      An alloying process for heat-treating the substrate to be treated to react the Ti film with the silicon-containing surface to form a Ti alloy film having a flat interface with the base on the silicon-containing surface;
    The substrate processing method is characterized in that it is continuously executed in the substrate processing apparatus without exposing the substrate to be processed to the atmosphere.
  2. The foreign matter removing process includes
      A product generation processing step for supplying an excitation gas onto the substrate to be processed, and generating a product by chemically reacting the foreign matter on the silicon-containing surface with a gas component of the excitation gas;
      The substrate processing method according to claim 1, wherein a product removal processing step for sublimating and removing the product on the silicon-containing surface by heat-treating the substrate to be processed is continuously performed.
  3. The alloy film is a Ti silicide film,
      The alloying treatment step is a silicide formation treatment step of forming a Ti silicide film by heat-treating the substrate to be treated to cause a reaction between the Ti film and the silicon-containing surface. 3. The substrate processing method according to 1 or 2.
  4. In the Ti film forming process, the Ti film forming process is performed in a temperature range in which a silicide phase of the Ti film is not formed,
      4. The substrate processing method according to claim 3, wherein in the silicide formation processing step, the heat treatment of the Ti film is performed in a temperature range in which a silicide phase of the Ti film is formed.
  5. In the Ti film forming process step, the Ti film forming process is performed in a temperature range of less than 580 ° C.
      5. The substrate processing method according to claim 4, wherein in the silicide formation processing step, the heat treatment of the Ti film is performed in a temperature range of 580 ° C. or more.
  6. The Ti film forming process includes supplying the Ti-containing source gas onto the substrate to be processed to cause an adsorption reaction of the Ti film on the silicon-containing surface, and supplying a reducing gas to the silicon film. 6. The substrate processing method according to claim 5, wherein the Ti film is formed by repeating the step of reducing the Ti film adsorbed on the containing surface a plurality of times.
  7. A TiN film forming step of supplying a Ti-containing source gas and a nitriding gas on the Ti silicide film to form a TiN film on the Ti silicide film;
    The substrate processing method according to claim 3, comprising:
  8. A substrate processing method of a substrate processing apparatus for forming a Ti silicide film on a silicon-containing surface of a substrate to be processed,
      A foreign matter removal treatment step of removing the foreign matter on the silicon-containing surface without using a plasma without making the silicon-containing surface exposed in the substrate to be treated amorphous;
      Ti film deposition process in which the temperature of the substrate to be treated is set to a temperature range in which reaction between Ti and the silicon-containing surface does not occur, and a Ti-containing source gas is supplied to the silicon-containing surface to form a Ti film Process,
      A metastable silicide phase forming process for forming a metastable silicide phase Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface;
      A stable silicide phase forming process for forming a stable silicide phase Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface;
    A substrate processing method comprising:
  9. A recording medium storing a program for executing a substrate processing method of a substrate processing apparatus for forming a Ti silicide film on a silicon-containing surface of a substrate to be processed,
      Computer
      A foreign matter removing step for removing the foreign matter on the silicon-containing surface without using plasma without making the silicon-containing surface exposed in the substrate to be processed amorphous;
      A Ti film forming process in which the temperature of the substrate to be processed is set to a temperature range in which reaction between Ti and the silicon-containing surface does not occur, and a Ti-containing source gas is supplied to the silicon-containing surface to form a Ti film. Steps,
      A silicide forming step of forming a Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface;
    A computer-readable recording medium having recorded thereon a program for continuously executing the program in the substrate processing apparatus.
  10. A program for executing a substrate processing method of a substrate processing apparatus for forming a Ti silicide film on a silicon-containing surface of a substrate to be processed,
      Computer
      A foreign matter removing step for removing the foreign matter on the silicon-containing surface without using plasma without making the silicon-containing surface exposed in the substrate to be processed amorphous;
      A Ti film forming process in which the temperature of the substrate to be processed is set to a temperature range in which reaction between Ti and the silicon-containing surface does not occur, and a Ti-containing source gas is supplied to the silicon-containing surface to form a Ti film. Steps,
      A silicide forming step of forming a Ti silicide film by heat-treating the substrate to be treated to cause a silicidation reaction between the Ti film and the silicon-containing surface;
    For continuously executing the program in the substrate processing apparatus.
JP2005303940A 2005-10-19 2005-10-19 Substrate processing apparatus, substrate processing method, program, and recording medium recording program Expired - Fee Related JP5046506B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005303940A JP5046506B2 (en) 2005-10-19 2005-10-19 Substrate processing apparatus, substrate processing method, program, and recording medium recording program

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005303940A JP5046506B2 (en) 2005-10-19 2005-10-19 Substrate processing apparatus, substrate processing method, program, and recording medium recording program
PCT/JP2006/318333 WO2007046204A1 (en) 2005-10-19 2006-09-15 Substrate treating apparatus, method of substrate treatment, program, and recording medium in which program is recorded
TW95138422A TWI443719B (en) 2005-10-19 2006-10-18 A substrate processing method, a program and a recording medium

Publications (3)

Publication Number Publication Date
JP2007115797A5 true JP2007115797A5 (en) 2007-05-10
JP2007115797A JP2007115797A (en) 2007-05-10
JP5046506B2 JP5046506B2 (en) 2012-10-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005303940A Expired - Fee Related JP5046506B2 (en) 2005-10-19 2005-10-19 Substrate processing apparatus, substrate processing method, program, and recording medium recording program

Country Status (3)

Country Link
JP (1) JP5046506B2 (en)
TW (1) TWI443719B (en)
WO (1) WO2007046204A1 (en)

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Publication number Priority date Publication date Assignee Title
JP4703364B2 (en) * 2005-10-24 2011-06-15 株式会社東芝 Semiconductor device and manufacturing method thereof
KR101131730B1 (en) * 2007-06-22 2012-04-06 가부시기가이샤 에프티엘 Method for protecting semiconductor wafer and process for producing semiconductor device
JP2009010043A (en) * 2007-06-26 2009-01-15 Tokyo Electron Ltd Substrate processing method, substrate processor, and recording medium
JP5171192B2 (en) * 2007-09-28 2013-03-27 東京エレクトロン株式会社 Metal film formation method
JP2009123793A (en) * 2007-11-13 2009-06-04 Shimadzu Corp Cluster type vacuum treatment apparatus
KR101569956B1 (en) * 2008-07-31 2015-11-17 도쿄엘렉트론가부시키가이샤 High throughput processing system for chemical treatment and thermal treatment and method of operating
JP2011066060A (en) * 2009-09-15 2011-03-31 Tokyo Electron Ltd Forming method of metal silicide film
JP2011100962A (en) * 2009-10-09 2011-05-19 Tokyo Electron Ltd Method of forming film and plasma processing apparatus
KR20110093476A (en) * 2010-02-12 2011-08-18 삼성엘이디 주식회사 System for vapor phase deposition, manufaturing method of light emitting device and light emitting device
JP5933375B2 (en) * 2011-09-14 2016-06-08 株式会社日立国際電気 Cleaning method, semiconductor device manufacturing method, substrate processing apparatus, and program
JP6121348B2 (en) * 2014-02-28 2017-04-26 東京エレクトロン株式会社 Plating pretreatment method, storage medium, and plating treatment system
JP5947435B1 (en) * 2015-08-27 2016-07-06 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP6439774B2 (en) * 2016-11-21 2018-12-19 トヨタ自動車株式会社 Manufacturing method of semiconductor device
JP2020038929A (en) * 2018-09-05 2020-03-12 東京エレクトロン株式会社 Etching method and etching equipment

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JPH04296021A (en) * 1991-03-26 1992-10-20 Mitsubishi Electric Corp Surface treatment method for semiconductor substrate
JP3086719B2 (en) * 1991-06-27 2000-09-11 株式会社東芝 Surface treatment method
JP3487080B2 (en) * 1996-06-18 2004-01-13 ソニー株式会社 Semiconductor device and manufacturing method thereof
JP3201318B2 (en) * 1997-11-05 2001-08-20 日本電気株式会社 Method for manufacturing semiconductor device
JP2002016018A (en) * 2000-06-30 2002-01-18 Sumitomo Heavy Ind Ltd Device and method for treating substrate
JP4039385B2 (en) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 Removal method of chemical oxide film
JP4833512B2 (en) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 To-be-processed object processing apparatus, to-be-processed object processing method, and to-be-processed object conveyance method
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4651955B2 (en) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 Deposition method

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