JP2011530169A - High throughput processing system for chemical processing and heat treatment and operation method thereof - Google Patents

Abstract

A high throughput processing system having a chemical processing system and a thermal processing system for processing a plurality of substrates is disclosed. The chemical processing system is configured to chemically process a plurality of substrates in a dry non-plasma environment. The heat treatment system is configured to heat treat a plurality of substrates chemically processed by the chemical processing system.

Description

  This application is related to US patent application Ser. No. 11 / 682,625 filed on Mar. 6, 2007, entitled “PROCESSING SYSTEM AND METHOD FOR PERFORMING HIGH THROUGHPUT NON-PLASMA PROCESSING” (ES-099). US patent application No. 12 / 183,597, pending the title “HEATER ASSEMBLY FOR HIGH THROUGHPUT CHEMICAL TREATMENT SYSTEM” (ES-135) and the title “HIGH THROUGHPUT CHEMICAL TREATMENT SYSTEM” AND METHOD OF OPERATING "(ES-147) pending US patent application No. 12 / 183,650, title" SUBSTRATE HOLDER FOR HIGH THROUGHPUT CHEMICAL TREATMENT SYSTEM "(ES-148) filed at the same time US patent application Ser. No. 12 / 183,694 and the title “HIGH T” filed at the same time. Related to US patent application Ser. No. 12 / 183,763, pending HROUGHPUT CHEMICAL TREATMENT SYSTEM AND METHOD OF OPERATING ”(ES-149). The entire contents of these applications are hereby incorporated by reference in their entirety.

  The present invention relates to processing systems, and more particularly to high throughput processing systems for chemical processing and heat treatment.

  In the material processing method system, various processes including, for example, an etching process and a cleaning process are used to remove material from the surface of the substrate. During pattern etching, fine features such as trenches, vias, contact vias, etc. are formed in the surface layer of the substrate. For example, pattern etching involves applying a thin layer of radiation sensitive material, such as a photoresist, to the upper surface of the substrate. A pattern is formed in the layer of radiation sensitive material using lithographic techniques, and this pattern is transferred to the underlying layer using a dry etch or a series of dry etch processes.

In addition, a multilayer mask comprising a layer of radiation sensitive material and one or more soft mask layers and / or hard mask layers may be implemented to etch features in the thin film. For example, when etching a feature in a thin film using a hard mask, the mask pattern in the radiation sensitive layer is transferred to the hard mask using another etching step that precedes the main etching step for the thin film. The hard mask may be selected from several materials for silicon processing including, for example, silicon dioxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), and carbon. Furthermore, the hard mask may be trimmed laterally to reduce the feature size formed in the thin film. Thereafter, one or more mask layers and / or any residue deposited on the substrate during processing may be removed using a dry cleaning process before and after pattern transfer to the underlying layer. One or more of the pattern forming, trimming, etching, and cleaning processing steps may utilize a dry non-plasma process to remove material from the substrate. For example, dry non-plasma processes include chemical treatment of the exposed surface of the substrate to change the surface chemistry of the exposed surface layer and post-treatment of the exposed surface that has been chemically altered to desorb the altered surface chemistry. A chemical removal process including a two-stage process involving The chemical removal process exhibits very high selectivity for removing one material relative to the other materials, and this process suffers from low throughput and is less realistic.

  The etching process is typically performed using a single substrate processing cluster tool and is configured to move a single substrate into and out of one or more processing modules and each of the one or more processing modules. Including a substrate handling system. A single substrate configuration allows the substrate to be processed from chamber to chamber in a manner that provides certain repeatable features both on the substrate and within the substrate. Although the cluster tool provides the necessary features for processing various features on the substrate, it would be advantageous in the field of semiconductor processing to increase the throughput of the processing module while providing the required processing features. .

  The present invention relates to processing systems, and more particularly to high throughput processing systems for chemical processing and heat treatment.

  Furthermore, the present invention relates to a high throughput processing system having a chemical processing system and a heat treatment system for processing a plurality of substrates. The chemical processing system is configured to chemically process a plurality of substrates in a dry non-plasma environment. The heat treatment system is configured to heat treat a plurality of substrates chemically processed by the chemical processing system.

According to one embodiment, a processing system for chemically processing a plurality of substrates is disclosed, the processing system being a chemical processing chamber, mounted in the chemical processing chamber, and a support surface thereof. A temperature controlled substrate holder configured to support two or more substrates thereon, and coupled to the chemical processing chamber for chemically changing an exposed surface layer on the two or more substrates A gas injection assembly configured to introduce one or more process gases into a processing space in the chemical processing chamber, and coupled to the gas injection assembly so as to increase a temperature of the gas injection assembly. A chemical processing system comprising a configured heater assembly and an evacuation system coupled to the chemical processing chamber;
A heat treatment system, wherein the heat treatment chamber is mounted in the heat treatment chamber and configured to support two or more substrates, and the two or more in order to heat treat the chemically altered exposed surface layer. Between one or more temperature-controlled substrate holders including a mechanism for raising the temperature of the heat-treated substrate of the substrate, and between the transfer surface and the one or more temperature-controlled substrate holders coupled to the heat treatment chamber A heat treatment system comprising: a substrate lifter assembly for vertically transferring the two or more substrates; and a vacuum exhaust system coupled to the heat treatment chamber and configured to discharge a gas product of the heat treatment, and ,
An isolation assembly coupled to the chemical processing system and the thermal processing system, the dedicated substrate configured to transport the two or more substrates into and out of the chemical processing system and the thermal processing system Includes an isolation assembly, including a handler.

1 is a schematic side view of a transfer system for a first processing system and a second processing system according to one embodiment. FIG. FIG. 2 is a schematic top view of the transfer system shown in FIG. 1. The side view schematic of the transfer system for the 1st processing system and the 2nd processing system by other examples. The top view schematic of the transfer system for the 1st processing system and the 2nd processing system by other examples. The cross-sectional side view of the chemical processing system by one Example. FIG. 6 is an exploded view in cross-sectional side view of the chemical processing system shown in FIG. 5. The top view of the substrate holder by one Example. FIG. 7B is a side view of the substrate holder shown in FIG. 7A. The top view layout figure of the pump system in the chemical processing system by one Example, and a substrate holder. The top view of the substrate holder by other Examples. The top view of the lift pin assembly by one Example. FIG. 8B is a side view of the lift pin assembly shown in FIG. 8A. The exploded view of the lift pin positioning device in the substrate holder by one Example. 1 is a cross-sectional view of a heater assembly according to one embodiment. The top view of the heater assembly by one Example. Side view of heater assembly shown in FIG. 10A The cross-sectional side view of the heat processing system by one Example. The cross-sectional side view of the heat processing system by one Example. FIG. 3 is a top view of a substrate lifting assembly according to one embodiment. The top view of the board | substrate lifting assembly by another Example. The figure of the operation | movement method of the chemical processing system and heat processing system by one Example. FIG. 4 is an exemplary data diagram for an etching rate using dry non-plasma processing. FIG. 3 is a diagram of a method for etching a substrate using non-plasma processing according to one embodiment.

  Apparatus and methods for performing high-throughput non-plasma processing are disclosed in various embodiments. However, one of ordinary skill in the art will recognize that various embodiments may be implemented without one or more specific details, or with other substitutions and / or additional methods, materials or components. In other instances, well-known structures, materials, or operations have not been described and illustrated in detail so as not to interfere with aspects of various embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented without specific details. Further, it should be understood that the various embodiments shown in the figures are illustrative and are not necessarily to scale.

  Throughout this specification "an embodiment" or "an embodiment" or derivative thereof means that a particular feature, structure, material, or characteristic described with respect to the embodiment is included in at least one embodiment of the invention. However, it does not mean that they are present in all embodiments. Thus, the appearance of terms such as “in one embodiment” or “in an embodiment” in various places throughout this specification does not necessarily refer to the same embodiment of the invention. Also, the particular features, structures, materials or characteristics may be combined in any suitable manner in one or more embodiments. Various additional layers and / or structures may be included and / or disclosed features may be omitted in other embodiments.

  The various operations are described in turn in a number of discrete operations, in the most useful manner for the science of the present invention. However, the order of description should not be construed to mean that these operations are necessarily dependent on the order. In particular, these operations need not be performed in the order of description. The disclosed operations may be performed in a different order than the disclosed embodiments. Various additional operations may be performed and / or disclosed operations may be omitted in additional embodiments.

  There is a general need for systems and methods for high throughput processing of multiple substrates and systems and methods for high throughput chemical and thermal processing of multiple substrates. By using dedicated handlers and multiple substrate holders for each station, the chemical and thermal throughput of multiple substrates can be improved.

  According to one embodiment, FIG. 1 illustrates a side view of a processing platform 100 that processes multiple substrates. For example, the process may include a dry non-plasma etching process or a dry non-plasma cleaning process. For example, the process may be used to remove residues and other contaminants from the surface of the substrate to trim the mask layer. Further, for example, the treatment may include a chemical oxide removal treatment.

  The processing system 100 includes a first processing system 110 and a second processing system 120 coupled to the first processing system 110. In one embodiment, the first processing system 110 is a chemical processing system and the second processing system 120 is a heat treatment system. In other embodiments, the second processing system 120 is a substrate rinsing system, such as a rinsing system. In addition, as shown in FIG. 1, the transfer system 130 is coupled to the first processing system 110, transfers a plurality of substrates into and out of the first processing system 110 and the second processing system 120, and a multi-element manufacturing system. 140 and a plurality of substrates are also exchanged. The multi-element manufacturing system may include a load lock element that allows the cassette of substrates to repeat periodically between ambient and low pressure conditions.

  The first and second processing systems 110, 120 and the transfer system 130 include processing elements within the multi-element manufacturing system 140, for example. The transfer system 130 may include a dedicated handler 160 that moves a plurality of substrates between the first processing system 110, the second processing system 120, and the multi-element manufacturing system 140. For example, the dedicated handler 160 is dedicated to transferring a plurality of substrates between the processing system (the first processing system 110 and the second processing system 120) and the multi-component manufacturing system 140. It is not so limited.

  In one example, the multi-element manufacturing system 140 may allow the substrate to be transferred to and from processing elements including devices such as etching systems, deposition systems, coating systems, patterning systems, metrology systems, and the like. In order to isolate the processing that occurs in the first and second systems, the isolation assembly 150 is utilized to combine the systems. For example, the isolation assembly 150 may include at least one of a thermal isolation assembly that provides thermal isolation and a gate valve assembly that provides vacuum isolation. Of course, the processing systems 110, 120 and the transfer system 130 may be arranged in any order.

  FIG. 2 shows a top view of the processing platform 100 shown in FIG. 1 for processing a plurality of substrates. In this embodiment, the substrate 142A is processed side by side with another substrate 142B in the same processing system. In an alternative embodiment, not shown, the substrates 142A, 142B may be processed back and forth, but the present embodiment is not so limited. Although only two substrates are shown in each processing system of FIG. 2, two or more substrates may be processed in parallel in each processing system.

  Referring to FIG. 2, the processing platform 100 may include a first processing element 102 and a second processing element 104 that extend from the multi-element manufacturing system 140 and are configured to operate in parallel with each other. As shown in FIGS. 1 and 2, the first processing element 102 may include a first processing system 110 and a second processing system 120, and the transfer system 130 utilizes a dedicated substrate handler 160 to remove the substrate 142. Move in and out of the first processing element 102.

  Alternatively, FIG. 3 illustrates a side view of a processing platform 200 for processing multiple substrates according to other embodiments. For example, the process may include a dry non-plasma etching process or a dry non-plasma cleaning process. For example, the process may be used to remove residues and other contaminants from the surface of the substrate to trim the mask layer. Further, for example, the treatment may include a chemical oxide removal treatment.

  The processing platform 200 includes a first processing system 210 and a second processing system 220 that are stacked on top of the second processing system 220 in a vertical direction as shown. For example, the first processing system 210 is a chemical processing system, and the second processing system 220 is a heat treatment system. Alternatively, the second processing system 220 is a substrate washing system such as a washing system. Also, as shown in FIG. 3, the transfer system 230 may be coupled to the first processing system 210 to transfer a plurality of substrates into and out of the first processing system 210, and a plurality of transfer systems 230 may be inserted into and out of the second processing system 220. It may be coupled to the second processing system 220 for transferring the substrate. The transfer system 230 may include a dedicated handler 160 that moves a plurality of substrates between the first processing system 210, the second processing system 220, and the multi-element manufacturing system 240. The dedicated handler 260 may be dedicated to transferring a plurality of substrates between the processing system (the first processing system 210 and the second processing system 220) and the multi-component manufacturing system 240. It is not so limited.

  Further, the transfer system 230 may exchange substrates with one or more substrate cassettes (not shown). Although only two processing systems are shown in FIG. 3, other processing systems including devices such as etching systems, deposition systems, coating systems, patterning systems, metering systems, etc. are transfer systems 230 or multi-component manufacturing systems. 240 can be accessed. Isolation assembly 250 can be used to combine the systems to isolate processes occurring in the first and second processing systems. For example, the isolation system 250 may include at least one of a thermal isolation assembly that provides thermal isolation and a gate valve assembly that provides vacuum isolation. Further, for example, the transfer system 230 can function as part of the isolation assembly 250.

  In general, at least one of the first processing system 110 and the second processing system 120 of the processing platform 100 shown in FIG. 1 includes at least two transfer openings to allow passage of a plurality of substrates. For example, as shown in FIG. 1, the second processing system 120 includes two transfer openings, which allow the substrate to pass between the first processing system 110 and the second processing system 120, The second transfer opening allows the substrate to pass between the transfer system 130 and the second processing system 120. However, with respect to the processing platform 100 shown in FIGS. 1 and 2 and the processing platform 200 shown in FIG. 3, each processing system includes at least one transfer opening that allows passage of a plurality of substrates.

  According to another embodiment, FIG. 4 shows a top view of a processing platform 300 for processing a plurality of substrates. For example, the process may include a dry non-plasma etching process or a dry non-plasma cleaning process. For example, the process may be used to remove residues and other contaminants from the surface of the substrate to trim the mask layer. Further, for example, the treatment may include a chemical oxide removal treatment.

  The processing platform 300 includes an optional auxiliary processing system 370 coupled to the first processing system 310, the second processing system 320 and the first transfer system 330 and the optional second transfer system 330 '. In one embodiment, the first processing system 310 is a chemical processing system and the second processing system 320 is a heat treatment system. In other embodiments, the second processing system 320 is a substrate rinsing system, such as a rinsing system. Also, as shown in FIG. 4, the first transfer system 330 and the optional second transfer system 330 ′ are coupled to the first processing system 310 and the second processing system 320, and the first processing system 310 and the second processing system. A plurality of substrates are transferred into and out of 320, and the multi-element manufacturing system 340 is configured to exchange a plurality of substrates. Multi-element manufacturing system 340 may include a load lock element that allows the cassette of substrates to repeat periodically between ambient and low pressure conditions.

  The first and second processing systems 310, 320 and the first and optional second transfer systems 330, 330 ′ can include processing elements within the multi-element manufacturing system 340, for example. The transfer system 330 may include a first dedicated handler 360, and the optional second transfer system 330 ′ may include any second dedicated handler 360 ′, the first processing system 310, the second A plurality of substrates are moved between the processing system 320, the optional auxiliary processing system 370 and the multi-element manufacturing system 340.

  In one example, the multi-element manufacturing system 340 may allow the substrate to be transferred to and from processing elements including devices such as etching systems, deposition systems, coating systems, patterning systems, metrology systems, and the like. Further, the multi-element manufacturing system 340 may be capable of transferring substrates inside and outside the auxiliary processing system 370. In this case, the auxiliary processing system 370 includes an etching system, a film forming system, a coating system, a patterning system, a weighing system, and the like. May be included.

  In order to isolate the processing occurring in the first and second processing systems, the isolation assembly 350 is utilized to couple the systems. For example, the isolation assembly 350 may include at least one of a thermal isolation assembly that provides thermal isolation and a gate valve assembly that provides vacuum isolation. Of course, the processing systems 310, 320 and the transfer systems 330, 330 'may be arranged in any order.

  As shown in FIG. 4, in this embodiment, two or more substrates 342 can be processed side-by-side in the same processing system. In an alternative embodiment, not shown, the substrate 342 may be processed back and forth, but this embodiment is not so limited. Although only two substrates are shown in each processing system of FIG. 4, two or more substrates may be processed in parallel in each processing system.

  Referring to FIGS. 5, 11A and 11B, a processing platform as described above includes a chemical processing system 500 for chemically processing a plurality of substrates and a thermal processing system 1000 for heat-treating the plurality of substrates, as described above. It's okay. For example, the processing platform includes a chemical processing system 500 and a heat treatment system 1000 coupled to the chemical processing system 500. The chemical processing system 500 includes a chemical processing chamber (chemical processing chamber) 510 that can be temperature controlled. The heat treatment system 1000 includes a heat treatment chamber (heat treatment chamber) 1010 that can be temperature-controlled. The chemical treatment chamber 510 and the heat treatment chamber 1010 can be thermally isolated from each other using a thermal isolation assembly and can be vacuum isolated from each other using a gate valve assembly, as described in detail below. .

  As shown in FIG. 5, a chemical processing system 500 is mounted in a chemical processing chamber 510 and is temperature controlled substrate holder 540 configured to support two or more substrates 545 on its support surface; Further included is an upper assembly 520 coupled to the upper section of the chemical processing chamber 510 and an evacuation system 580 coupled to the chemical processing chamber 510 for evacuating the chemical processing chamber 510.

  The upper assembly 520 is coupled to the chemical processing chamber 510 and includes one or more processing gases in the processing space 512 in the chemical processing chamber 510 to chemically change the exposed surface layer on the two or more substrates 545. A gas injection assembly 550 configured to introduce (process gas). Additionally, the upper assembly 520 includes a heater assembly 530 coupled to the gas injection assembly 550 and configured to increase the temperature of the gas injection assembly 550.

  The chemical processing chamber 510 includes an opening 514, and the plurality of substrates 545 can be transferred into and out of the chemical processing chamber 510 through the opening 514. The opening 514 in the chemical treatment chamber 510 may define a common passage with the opening 1016 of the heat treatment chamber 1010, and the plurality of substrates 545 are transferred between the chemical treatment chamber 510 and the heat treatment chamber 1010 through this. Can be done.

  During processing, the common passage can be sealed and closed using the gate valve assembly 518 to allow independent processing in the two chambers 510, 1010. As shown in FIG. 5, the gate valve assembly 518 may include a drive system 516, such as a hydraulic drive system. Further, the transfer opening 1014 may be formed in the heat treatment chamber 1010 so that the substrate can be replaced by the transfer system as shown in FIGS. For example, a second thermal isolation assembly (not shown) may be implemented to thermally isolate the thermal processing chamber 1010 from a transfer system (not shown). Although the opening 1014 is illustrated as part of the heat treatment chamber 1010 (aligned with FIG. 1), the transfer opening 1014 can be formed in the chemical treatment chamber 510 rather than in the heat treatment chamber 1010 (shown in FIG. 1). Or the transfer opening 1014 can be formed in both the chemical processing chamber 510 and the heat treatment chamber 1010.

  As shown in FIG. 5, the chemical processing system 500 includes a temperature controlled substrate holder 540 to provide several operational functions for thermally controlling and processing a substrate. The substrate holder 540 includes one or more temperature control elements configured to regulate and / or increase the temperature of the plurality of substrates 545.

  One or more temperature control elements may be configured to heat and / or cool the substrate 545. For example, the temperature controlled substrate holder 540 may be a cooling system having a recirculating flow of heat transfer fluid that receives heat from the substrate holder 540 and transfers heat to a heat exchange system (not shown), or alternatively, a heat exchanger. A heating system having a recirculating flow of heat transfer fluid that receives heat from (not shown) and transfers heat to the substrate holder 540 may be included. In other embodiments, the temperature control element may include a resistance heating element or a thermoelectric heater / cooler. These temperature control elements may be used to control the temperature of the substrate holder 540, the chamber walls of the chemical processing chamber 510, and the upper assembly 520.

  According to one embodiment, FIG. 6 shows several views of a substrate holder that performs some of the functions described above. FIG. 6 shows an exploded cross-sectional view of the temperature-controlled substrate holder 540 shown in FIG. The substrate holder 540 includes a temperature controlled substrate table 542 having an upper surface configured to support two or more substrates, a lower surface opposite the upper surface, and an edge surface, and a temperature controlled substrate. A chamber mating component 612 coupled to the lower surface of the table 542 and an isolation component 614 disposed between the bottom of the chamber mating component 612 and the lower chamber wall 610 of the chemical processing chamber 510. The chamber alignment component 612 may include two or more struts 613 configured to support a temperature controlled substrate table 542 at a distance from the lower chamber wall 610 of the chemical processing chamber 510. Each of the posts 613 includes a first end coupled to the lower surface of the temperature controlled substrate table 542 and a second end coupled to the lower chamber wall 610 of the chemical processing chamber 510.

  The temperature controlled substrate table 542 and chamber alignment component 612 may be manufactured from an electrically and thermally conductive material such as, for example, aluminum, stainless steel, nickel, or the like. The isolation component 614 can be made from a heat resistant material with relatively low thermal conductivity, such as, for example, quartz, alumina, Teflon, and the like.

  The temperature controlled substrate table 542 may include temperature control elements such as cooling paths, heating paths, resistance heating elements or thermoelectric elements. For example, as shown in FIG. 6, the temperature controlled substrate table 542 includes a flow path 544 formed inside the temperature controlled substrate table 542. The flow path 544 includes an outlet fluid tube 546 and an inlet fluid tube 548.

  The substrate holder temperature control system 560 includes a fluid thermal unit constructed and arranged to control the temperature of the heat transfer fluid. The fluid heat unit may include a fluid storage tank, a pump, a heater, a cooler, and a fluid temperature sensor. For example, the substrate holder temperature control system 560 further includes a controller coupled to the fluid thermal unit, the controller configured to monitor, adjust or control the temperature of the heat transfer fluid.

  For example, the substrate holder temperature control system 560 may receive temperature measurements from a temperature sensor coupled to the temperature controlled substrate table 542 and configured to measure the substrate holder temperature. Further, for example, the substrate holder temperature control system 560 compares the substrate holder temperature with the target substrate holder temperature, and reduces the difference between the substrate holder temperature and the target substrate holder temperature. A controller is used to adjust the flow rate or a combination thereof.

  Further, for example, the substrate holder temperature control system 560 may receive a plurality of temperature measurements from a plurality of temperature sensors coupled to the temperature-controlled substrate table 542 and also utilizes the controller to control the temperature. In order to change the temperature uniformity of the substrate table 542, at least one of monitoring, adjustment and control of a plurality of substrate holder temperatures may be performed.

  The channel 544 allows flow of fluids such as water, Fluorinert, Galden HT-135, etc. to provide heat transfer-convection heating or cooling of the temperature controlled substrate table 542 It may be a spiral or serpentine passage in the substrate table 542 that is temperature controlled. Alternatively, the temperature controlled substrate table 542 may include an array of thermoelectric elements that can heat or cool the substrate depending on the direction of current through each element. An exemplary thermoelectric element is commercially available from Advanced Thermoelectric, Model ST-127-1.4-8.5M (a 40 mm × 40 mm × 3.4 mm thermoelectric device capable of 72 W maximum heat conduction output).

  Although a single flow path 544 is shown, the temperature controlled substrate table 542 may include one or more additional flow paths formed in the temperature controlled substrate table 542, in which case one Each of the additional flow paths has an additional inlet end and an additional outlet end, and each additional inlet end and each additional outlet end conducts additional heat transfer fluid through two or more struts 613. Configured to receive and return.

  The isolation component 614 may further include a thermal isolation gap to provide additional thermal isolation between the temperature controlled substrate table 542 and the chemical processing chamber 510. The thermal isolation gap may be evacuated using a vacuum line as part of a pump system (not shown) or evacuation system 580, and / or a gas source (see figure) to change its thermal conductivity. (Not shown). The gas supply source can be, for example, a backside gas supply source that is utilized to couple a thermally conductive gas to the backside of the substrate 545.

  Each component 542, 612, 614 further includes fasteners (such as bolts and screw holes) for securing each other and for securing the temperature controlled substrate holder 540 to the chemical processing chamber 510. In addition, each part 542, 612, 614 facilitates the above-described utility path to the respective part, and a vacuum seal, such as an elastomeric O-ring, must maintain the vacuum integrity of the chemical processing chamber 510. Used in some places.

  Further, the temperature controlled substrate holder 540 may include an electrostatic clamping system (not shown) (or mechanical) to electrically (mechanically) restrain the temperature controlled 545 to the temperature controlled substrate holder 540. A clamping system). The electrostatic clamp (ESC) may include a ceramic layer, a clamping electrode embedded therein, and a high voltage (HV) direct current (DC) power source coupled to the clamping electrode using an electrical connection. . The design and implementation of such clamps is well known in the field of electrostatic clamping systems.

  Further, the temperature controlled substrate holder 540 may include a backside gas supply system (not shown) for supplying a heat transfer gas. The thermally conductive gas may be conveyed to the back side of the substrate 545, for example, to improve the gas gap thermal conductivity between the substrate 545 and the temperature controlled substrate holder 540. For example, the heat transfer gas supplied to the back side of the substrate 545 may include an inert gas such as helium, argon, xenon, krypton, a processing gas, or other gas such as oxygen, nitrogen, or hydrogen. Such a system can be utilized when substrate temperature control is required at elevated or reduced temperatures. For example, the backside gas system can include a multi-zone gas distribution system, such as a two-zone (center-edge) system, where the backside gas gap pressure is independent between the substrate 545 and the center and edge. Can be varied.

  Further, the temperature controlled substrate holder 540 includes a first array of lift pins 576 configured to raise the first substrate from and to the upper surface of the temperature controlled substrate table 542, and a temperature controlled substrate table. A lift pin assembly 570 may be included that includes a first array of lift pins 576 configured to raise the second substrate from and into the upper surface of 542.

  As shown in FIG. 6, the lift pin assembly 570 is coupled to the lift pin support member 574 through the lower chamber wall 610 through the penetration 616 in the chemical processing chamber 510 and through the first array of lift pin holes. A drive system 572 configured to translate the lift pin support member 574 such that the first array of lift pins 576 translates and the second array of lift pins 576 translates through the second array of lift pin holes.

  The temperature of the temperature controlled substrate holder 540 can be monitored using a temperature sensing device such as a thermocouple (eg, a K-type thermocouple, Pt sensor, etc.). Further, the substrate holder temperature control system 560 may use the temperature measurement as feedback to the substrate holder 540 to control the temperature of the substrate holder 540. For example, at least one of fluid flow rate, fluid temperature, heat transfer gas type, heat transfer gas pressure, clamping force, resistance heater element current or voltage, thermoelectric device current or polarity, etc. may be the temperature of the substrate 545 and / or the substrate Adjustments may be made to affect changes in the temperature of the holder 540.

  Referring to FIGS. 7A and 7B, a top view and a side view of the substrate holder are shown according to other embodiments. As shown in FIG. 7A, the substrate holder 740 includes a proximal upper surface 760 configured to support two substrates 745, 745 ', a lower surface 762 opposite the upper surface 760, and an edge. And a temperature controlled substrate table 742 having a surface 764. The temperature controlled substrate table 742 is further configured to regulate and / or control the temperature of the two substrates 745, 745 '. The substrate holder 740 further includes an inlet fluid tube 746 and an outlet fluid tube 748 configured to supply and discharge a flow of heat transfer fluid through the flow path 744.

  As shown in FIG. 7A, an inlet fluid tube 746 is formed through one of the two or more struts, where the inlet fluid tube 746 receives the heat transfer fluid from the fluid heat unit and draws the heat transfer fluid. It is configured to be supplied to the inlet end of the flow path 744. Further, the outlet fluid tube 748 is formed through the other one of the two or more struts, where the outlet fluid tube 748 is configured to receive heat transfer fluid from the outlet end of the flow path 744. . The temperature controlled substrate table 742 may include an upper section 741 and a lower section 743, in which case the flow path 744 is formed on both the upper section 741 or the lower section 743 or both before joining the two sections. Is done. The upper section 741 and the lower section 743 may be joined by securing the two sections together by a seal disposed between them or by welding the two sections together.

  The flow path 744 may have a snake shape. However, the shape of the flow path is arbitrary. For example, FIG. 7D illustrates a substrate holder 740 'with a flow path 744' having a more intricate path.

  Referring to FIG. 7C, a top view of the temperature controlled substrate table 742 is shown, and an exemplary temperature controlled substrate holder 742 against the vacuum exhaust port 780 and chamber wall 729 in the lower sidewall of the chemical processing chamber. A three-dimensional relationship is illustrated. The temperature controlled substrate holder 742 is shaped in a manner that improves the flow through the chemical processing chamber to the evacuation port 780.

  Referring to FIGS. 7A, 7B, 7D, 8A, 8B, the substrate holder 740 may further include a lift pin assembly that includes a first array 751 of lift pins that pass through a temperature controlled substrate table 742. A first array 750 of three lift pin holes configured to allow the passage of the first substrate 745 to and from the upper surface 760 of the temperature controlled substrate table 742 and from the upper surface 760; The passage of the second array 751 ′ of lift pins through the substrate table 742 that is configured to allow the second substrate 745 ′ to rise to and from the upper surface 760 of the temperature-controlled substrate table 742. And a second array of three lift pin holes 750 '.

  As shown in FIGS. 8A and 8B, the lift pin assembly is coupled to a lift pin support member 752 through a wall 710 in the chemical processing chamber 510 and through a first array 750 of lift pin holes. And a drive system including a piston member 754 configured to translate the lift pin support member 752 such that the second array 751 ′ of the lift pins translates through the second array 750 ′ of the lift pin holes. The first array of lift pins 751 is configured to pass through and aligned with the first array of lift pin holes 750, and each lift pin of the first array of lift pin holes 750 is configured to contact the first substrate. One contact end and a first support end coupled to the lift pin support member 752. The second array of lift pins 751 ′ is configured to pass through and align with the second array of lift pin holes 750 ′, and each lift pin of the second array of lift pins 751 ′ is configured to contact the second substrate. A second contact end and a second support end coupled to the lift pin support member 752. The piston member 754 is coupled to the lift pin support member 752 and is configured to translate the lift pin support member 752 in the vertical direction by sliding through the penetrating portion of the wall 710.

  As shown in FIG. 8C, each lift pin of the first array of lift pin holes 750 and the second array of lift pins 751 ′ has an insert 749 with a flare end with an overhanging dimension 747 that is larger than the nominal dimension 747 ′ of the lift pin hole. May include. The use of the insert 749 is to align the second array of lift pins 751 'to the second array of lift pin holes 750' during assembly of the substrate holder 740 (before, during, and after service), the first array of lift pin holes. Alignment of the first array 751 of lift pins to 750 may be assisted.

  Further, as shown in FIG. 8B, the temperature controlled substrate table 742 may optionally include a skirt 790 coupled to the lower surface 762 and / or the edge surface 764. The skirt 790 can help reduce the amount of contaminants and process residues that are deposited below the lift pin assembly and the temperature controlled substrate table 742. Further, the skirt portion 790 can help reduce the amount of process residue gettering due to the lift pin assembly and the temperature controlled substrate table 742 below (ie, the lower surface 762).

  As described above, the upper assembly 520 is coupled to the chemical processing chamber 510 and is coupled to the gas injection assembly 550 and the gas injection assembly 550 configured to introduce one or more process gases into the process space 512. And a heater assembly 530 configured to raise the temperature of the gas injection assembly 550.

Gas injection assembly 550 includes a showerhead gas injection system having a gas distribution assembly and one or more gas distribution plates coupled to the gas distribution assembly and configured to form one or more gas distribution plenums. And may include. Although not shown, the one or more gas distribution plenums may include one or more gas distribution baffle plates. The one or more gas distribution plates further include one or more gas distribution orifices for distributing process gas from the one or more gas distribution plenums to a processing space 512 in the chemical processing chamber 510. Further, one or more gas supply lines may be coupled to one or more gas distribution plenums, eg, via a gas distribution assembly, to supply a process gas that includes one or more gases. The processing gas can be, for example, NH ₃ , HF, H ₂ , O ₂ , CO, CO ₂ , Ar, He, or the like.

As shown in FIG. 5, the gas injection assembly 550 may be configured to distribute a processing gas including at least two gases into the chemical processing chamber 510. The gas injection assembly 550 includes a first array of orifices 552 for introducing a first process gas from the gas supply system 556 and a second array of orifices 554 for introducing a second process gas from the gas supply system 556. May be included. For example, the first process gas may include HF and the second process gas may include NH ₃ and optionally Ar.

  As shown in FIG. 9 (enlarged view of FIG. 5 showing additional details), the upper assembly 820 is coupled to the gas injection assembly 850 and the gas injection assembly 850 to increase the temperature of the gas injection assembly 850. And a heater assembly 830 configured to be configured. The gas injection assembly 850 is configured to distribute a process gas that includes at least two gases. The gas injection assembly 850 includes a first gas distribution plenum 856 configured to introduce a first process gas into the process space 812 through the first array of orifices 852, and a process through the second array of orifices 854. And a second gas distribution plenum 858 configured to introduce a second process gas into the space 812. The first gas distribution plenum 856 is configured to receive the first process gas from the gas supply system 870 through the first passage 855, and the second gas distribution plenum 858 is through the second passage 857. The second process gas from 870 is configured to receive. Although not shown, the gas distribution plenums 856, 858 can include one or more gas distribution baffle plates.

The processing gas can include, for example, NH ₃ , HF, H ₂ , O ₂ , CO, CO ₂ , Ar, He, and the like. As a result of this configuration, the first process gas and the second process gas may be independently introduced into the process space 812 without any interaction except within the process space 812.

  As shown in FIG. 5, the heater assembly 530 is coupled to the gas injection assembly 550 and is configured to increase the temperature of the gas injection assembly 550. The heater assembly 530 includes a plurality of heating elements 532 and a power source 534 configured to couple to the plurality of heating elements.

  As shown in FIG. 9, the heater assembly 830 includes a plurality of resistance heating elements 831, 832, 833, 834 that are coupled to the upper surface of the gas injection assembly 850. The heater assembly 830 is further coupled to the plurality of resistance heating elements 831, 832, 833, 834 and is configured to couple a current to each of the plurality of resistance heating elements 831, 832, 833, 834. including. The power source 860 may include a direct current (DC) power source or an alternating current (AC) power source. Further, the plurality of resistance heating elements 831, 832, 833, and 834 may be connected in series or may be connected in parallel.

  In addition, the heater assembly 830 further includes an isolation member 836 and a clamp member 838 configured to secure the plurality of resistance heating elements 831, 832, 833, 834 to the upper surface of the gas injection assembly 850. Good. Further, the heater assembly 830 is configured to shield the heat shield 840 and the plurality of resistance heating elements 831, 832, 833, 834, and the heat shield 840 is spaced from the upper surface of the gas injection assembly 850. One or more pillars 842 that stand apart may be included. Alternatively, the isolation may be provided by a thermal isolation foam.

  Referring to FIGS. 10A and 10B, top and side views of an upper assembly 920 including a heater assembly 930 and a gas injection assembly 950 are provided. The upper assembly 920 may include a plate member 922 and a lower member 924. The heater assembly 930 includes a plate member 922 having an upper surface and a plurality of resistance heating elements 932, 934, 936, 938 coupled to the upper surface of the plate member 922. As shown in FIG. 10A, each of the plurality of resistive heating elements 932, 934, 936, 938 includes a heating element having a major axis bend of 180 degrees. For example, each of the plurality of resistance heating elements 932, 934, 936, 938 has a first end 933 fixedly coupled to the upper surface of the plate member 922 and a second end configured to be coupled to a power source. 931, a bend between the first end 933 and the second end 931, a first straight section extending between the first end 933 and the bend, and extending between the second end 931 and the bend. And a second straight section.

  The first straight section may be substantially parallel to the second straight section for each of the plurality of resistance heating elements 932, 934, 936, 938. Further, one first and second straight sections of the plurality of resistance heating elements 932, 934, 936, 938 are substantially parallel to the other first and second straight sections of the plurality of resistance heating elements. It's okay. Further, the plurality of resistance heating elements 932, 934, 936, 938 may be arranged in pairs on the upper surface of the plate member 922. Further, the one or more spacers coupled to the upper surface of the plate member 922 may include one of the plurality of resistance heating elements 932, 934, 936, 938 and the other of the plurality of resistance heating elements 932, 934, 936, 938. May be arranged to be positioned relative to one of the two.

  In order to control and / or uniformly heat the temperature profile of the gas distribution system, the plurality of resistive heating elements 932, 934, 936, 938 may be arranged in an interlaced manner, where multiple At least two of the resistance heating elements 932, 934, 936, 938 have at least two first first ends 933 out of the plurality of resistance heating elements 932, 934, 936, 938. The elements 932, 934, 936, and 938 may be disposed so as to be located in close proximity to the inner edge of at least two second bent portions of the elements 932, 934, 936, and 938.

  The plurality of resistance heating elements 932, 934, 936, 938 may include, for example, tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, and the like. Examples of commercially available materials for making resistive heating elements include Kanthal, Nikrothal, Akrothal, which are registered trademarks for metal alloys manufactured by Kanthal Corporation, Bethel, Connecticut. The Kanthal type includes a ferrite alloy (FeCrAl), and the Nikthal type includes an austenitic alloy (NiCr, NiCrFe). In one example, each of the plurality of resistance heating elements 932, 934, 936, 938 may include a Watlow FIREBAR® heating element, which is a Watlow Electric Manufacturing Company (12001 Lackland Road, St. Louis, MO 63146). ). Alternatively or in addition, a cooling element can be employed in any embodiment.

  As described above, the upper assembly 920 further includes a power source configured to couple power to the plurality of resistance heating elements 932, 934, 936, 938. The power source may include a direct current (DC) power source or an alternating current (AC) power source. The plurality of resistance heating elements 932, 934, 936, 938 may be connected in series or may be connected in parallel. Further, the temperature sensor 960 may be coupled to the gas injection assembly 950 and configured to measure the temperature of the gas injection assembly 950. The temperature sensor 960 may include a thermocouple (eg, a K-type thermocouple, a Pt sensor, etc.). The controller may be coupled to the heater assembly 930 and the temperature sensor 960 and configured to monitor, adjust, or control the temperature of the gas injection assembly 950. For example, at least one of voltage, current, power, etc. may be adjusted to affect the temperature of the gas injection assembly 950 and / or the upper assembly 920. Further, a plurality of temperature sensors may be utilized to monitor, adjust and / or control the temperature distribution for the gas injection assembly 950 and / or the upper assembly 920.

  Referring back to FIG. 5, the chemical processing system 500 may further include a temperature controlled chemical processing chamber 510 that is maintained at an elevated temperature. For example, a wall heating element (not shown) may be coupled to a wall temperature control unit (not shown), and the wall heating element may be configured to be coupled to the chemical processing chamber 510. The heating element can include a resistance heating element such as a filament, such as tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, and the like. Examples of commercially available materials for making resistive heating elements include Kanthal, Nikrothal, Akrothal, which are registered trademarks for metal alloys manufactured by Kanthal Corporation, Bethel, Connecticut. The Kanthal type includes a ferrite alloy (FeCrAl), and the Nikthal type includes an austenitic alloy (NiCr, NiCrFe). As current flows through the filament, power is released as heat, so the wall temperature control unit may include, for example, a controllable DC power source. For example, the wall heating element may include at least one FIREROD® cartridge heater commercially available from Watlow Electric Manufacturing Company (12001 Lackland Road, St. Louis, MO 63146). The cooling element can also be employed in the chemical processing chamber 510. The temperature of the chemical processing chamber 510 can be monitored using a temperature sensing device, such as a thermocouple (eg, a K-type thermocouple, Pt sensor, etc.). Furthermore, the controller can utilize the temperature measurement as feedback to the wall temperature control unit to control the temperature of the chemical processing chamber 510.

  Still referring to FIG. 5, the evacuation system 580 can include a gate valve and a vacuum pump to throttle the chamber pressure. The vacuum pump can be, for example, a turbomolecular vacuum pump (TMP) capable of pumping speeds of up to about 5000 liters per second (and more). For example, the TMP can be a Seiko STP-A803 vacuum pump or an Ebara ET1301W vacuum pump. TMP is useful for low pressure processing, typically low pressure processing of less than about 50 mTorr. Mechanical booster pumps and dry roughing pumps can be used for high pressure (ie greater than about 100 mTorr) or low throughput processing (ie no gas flow).

  Still referring to FIG. 5, the chemical processing system 500 can further include a control system 590 that includes a microprocessor, memory and digital I / O ports, such as a temperature and pressure sensing device. A control voltage sufficient to monitor the output from the chemical processing system 500 and to communicate and operate the input to the chemical processing system 500 can be generated. Further, the control system 590 includes a chemical processing chamber 510, a temperature controlled substrate holder 540, an upper assembly 520, a heater assembly 530, a gas injection assembly 550, a vacuum exhaust system 580, a substrate holder temperature control system 560, a lift pin set. The solid 570 and the gas valve assembly 518 can be coupled to and exchange information with them. For example, a program stored in the memory can be used to activate input to the above-described components of the chemical processing system 500 according to a processing recipe.

  The control system 590 may be disposed at a local position with respect to the chemical processing system 500 or may be disposed at a remote position with respect to the chemical processing system 500 via the Internet or an intranet. Accordingly, the control system 590 can exchange data with the chemical processing system 500 using at least one of a direct connection, the Internet, or an intranet. The control system 590 may be coupled to the Internet on the customer side (ie, device manufacturer, etc.), or may be coupled to the Internet on the vendor side (ie, device manufacturer). In addition, other computers (ie, controllers, servers, etc.) can access the control system 590 for exchanging data via at least one of a direct connection, the Internet, or an intranet.

  As shown in FIG. 11A, the heat treatment system 1000 further includes a temperature controlled substrate holder 1040 mounted in the heat treatment chamber 1010 and configured to support two or more substrates 1045 on its support surface; Further included is an upper assembly 1020 coupled to the upper section of the chemical processing chamber 1010 and an evacuation system 1080 coupled to the chemical processing chamber 1010 for evacuating the chemical processing chamber 1010.

  The substrate holder 1040 includes a temperature controlled substrate holder having one or more pedestals 1042 configured to support two or more substrates 1045. One or more pedestals 1042 may be thermally isolated from heat treatment chamber 1010 using thermal barrier 1044 and isolation member 1046. For example, the one or more pedestals 1042 may be manufactured from, for example, aluminum, stainless steel, nickel, etc., and the isolation member 1046 may be manufactured from a thermal insulator such as Teflon, alumina, quartz, or the like. Further, one or more pedestals 1042 may be coated with a protective barrier to reduce foreign matter on two or more substrates 1045. For example, the coating applied to some or all of one or more pedestals 1042 may include a material to be deposited, such as silicon.

The substrate holder 1040 further includes one or more heating elements embedded therein and a combined substrate holder temperature control unit 1060. The heating element can include a resistance heating element, such as a filament, such as tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, and the like. Examples of commercially available materials for making resistive heating elements include Kanthal, Nikrothal, Akrothal, which are registered trademarks for metal alloys manufactured by Kanthal Corporation, Bethel, Connecticut. The Kanthal type includes a ferrite alloy (FeCrAl), and the Nikthal type includes an austenitic alloy (NiCr, NiCrFe). As current flows through the filament, power is released as heat, and therefore the substrate holder temperature control unit 1060 may include, for example, a controllable DC power source. Alternatively, the temperature controlled substrate holder 1040 can be, for example, a cast heater commercially available from Watlow Electric Manufacturing Company (12001 Lackland Road, St. Louis, MO 63146) capable of a maximum operating temperature of 400-450 ° C., or It can also be a film heater comprising an aluminum nitride material, also commercially available from Watlow, capable of operating temperatures of about 300 ° C. and power densities up to about 23.25 W / cm ² . The cooling element can be incorporated in the substrate holder 1040.

  The temperature of the substrate holder 1040 may be monitored using a temperature sensing device such as a thermocouple (eg, a K-type thermocouple, Pt sensor, etc.). In order to control the temperature of the substrate holder 1040, the temperature measurement can be used as feedback to the substrate holder temperature control unit 1060.

  In addition, optical fiber thermometer model nos. Commercially available from Advanced Energy, Inc. (Sharp Point Drive 1625, Fort Collins, 80525), which can provide measurements of, for example, about 50 ° C. to 2000 ° C. and accuracy of about ± 1.5 ° C. OR2000F, or the band edge temperature measurement system described in pending US patent application 10/168544, filed July 2, 2002, the entire contents of which are incorporated herein by reference. The temperature of the substrate can be monitored using a temperature sensing device.

  Still referring to FIG. 11A, the heat treatment chamber 1010 is temperature controlled and maintained at a selected temperature. For example, a hot wall heating element (not shown) may be coupled to a hot wall temperature control unit (not shown) such that the hot wall heating element (not shown) is coupled to the chemical processing chamber 1010. May be configured. The heating element can include a resistance heating element such as a filament, such as tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, and the like. Examples of commercially available materials for making resistive heating elements include Kanthal, Nikrothal, Akrothal, which are registered trademarks for metal alloys manufactured by Kanthal Corporation, Bethel, Connecticut. The Kanthal type includes a ferrite alloy (FeCrAl), and the Nikthal type includes an austenitic alloy (NiCr, NiCrFe). As current flows through the filament, power is released as heat, and therefore the hot wall temperature control unit may include, for example, a controllable DC power source. For example, the hot wall heating element may include at least one FIREROD® cartridge heater commercially available from Watlow Electric Manufacturing Company (60510, Kingsland Doctor 1310, Illinois). Alternatively, or in addition, a cooling element can be employed in the chemical processing chamber 1010. The temperature of the chemical processing chamber 1010 may be monitored using a temperature sensing device, such as a thermocouple (eg, a K-type thermocouple, Pt sensor, etc.). Furthermore, the controller can use the temperature measurement as feedback to the hot wall temperature control unit to control the temperature of the chemical processing chamber 1010.

  Still referring to FIG. 11A, the thermal processing system 1000 further includes an upper assembly 1020. The upper assembly 1020 can include, for example, a gas injection system 1050 for introducing purge gas, process gas, or cleaning gas into the process space 1012 in the chemical process chamber 1010. Alternatively, the chemical processing chamber 1010 may include a gas injection system that is separate from the upper assembly. For example, purge gas, process gas, or cleaning gas can be introduced into the heat treatment chamber 1010 through its sidewalls. It may further comprise a cover or lid having at least one hinge, a handle and a clasp that locks the lid in the closed position. In an alternative embodiment, the upper assembly 1020 is a radiation such as an array of tungsten halogen lamps for heating the substrate 1045 ′ that rests on the blades 1074, 1074 ′ (see FIG. 12) of the substrate lifter assembly 1070. A heater can be included. In this case, the substrate holder 1040 can be excluded from the heat treatment chamber 1010.

Still referring to FIG. 11A, the upper assembly 1020 is temperature controlled and maintained at a selected temperature. For example, the upper assembly 1020 may be coupled to an upper assembly temperature control unit (not shown) and an upper assembly heating element (not shown) is configured to be coupled to the upper assembly 1020. Also good. The heating element can include a resistance heating element such as a filament, such as tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, and the like. Examples of commercially available materials for making resistive heating elements include Kanthal, Nikrothal, Akrothal, which are registered trademarks for metal alloys manufactured by Kanthal Corporation, Bethel, Connecticut. The Kanthal type includes a ferrite alloy (FeCrAl), and the Nikthal type includes an austenitic alloy (NiCr, NiCrFe). As current flows through the filament, power is released as heat, and therefore the upper assembly temperature control unit may include, for example, a controllable DC power source. For example, the upper assembly heating element can comprise a two-zone silicone rubber heater (about 1.0 mm thick) that can tolerate about 1400 W (or a power density of about 5 W / in ² ). The temperature of the upper assembly 1020 may be monitored using a temperature sensing device, such as a thermocouple (eg, a K-type thermocouple, Pt sensor, etc.). In addition, the controller can utilize the temperature measurement as feedback to the upper assembly temperature control unit to control the temperature of the upper assembly 1020. Upper assembly 1020 may additionally or alternatively include a cooling element.

  Referring to FIGS. 11A, 11B, and 12, the thermal processing system 1000 further includes a substrate lifter assembly 1070. The substrate lifter assembly 1070 lowers the substrate 1045 to the upper surface of the pedestal 1042, 1042 ′ and raises the substrate 1045 ′ from the upper surface of the pedestal 1042, 1042 ′ to the holding surface or to a transfer surface therebetween. Configured. At the transfer surface, the substrate 1045 'can be replaced by a transfer system to transfer the substrate into and out of the chemical and thermal processing chambers 510,1010. At the holding surface, the substrate 1045 'can be cooled while another pair of substrates is being exchanged between the transfer system and the chemical and thermal processing chambers 510,1010. As shown in FIG. 12, substrate lifter assembly 1070 includes a pair of blades 1074, 1074 ', each having three or more tabs 1076, 1076' for receiving substrate 1045 '. Further, the blades 1074, 1074 ′ are coupled to drive arms 1072, 1072 ′ for coupling the substrate lifter assembly 1070 to the heat treatment chamber 1010, and each drive arm 1072, 1072 ′ is connected to the blades 1072 in the heat treatment chamber 1010. It is driven by a drive system 1078 that allows vertical translation of 1072 '. The tabs 1076, 1076 ′ are configured to grip the substrate 1045 ′ in the raised position and retract into the receiving cavities 1077 formed in the pedestals 1042, 1042 ′ when in the lowered position. The drive system 1078 includes a hydraulic drive system designed to meet various requirements including, for example, cylinder stroke length, cylinder stroke speed, position accuracy, non-rotation regime, etc., and the design is in the field of hydraulic drive system design. Known to those skilled in the art.

  Alternatively, as shown in FIGS. 11A, 11B, and 13, the thermal processing system 1000 further includes a substrate lifter assembly 1070 '. The substrate lifter assembly 1070 ′ raises and lowers the substrate 1045 ′ from and to the upper surface of the proximal pedestal 1042 ″ and moves the substrate 1045 ′ from the upper surface of the pedestal 1042 ″ to the holding surface or between them. Configured to rise. At the transfer surface, the substrate 1045 'can be replaced by a transfer system to transfer the substrate into and out of the chemical and thermal processing chambers 510,1010. At the holding surface, the substrate 1045 'may be cooled while another pair of substrates is being exchanged between the transfer system and the chemical and thermal processing chambers 510,1010. As shown in Figure 13, the substrate lifter assembly 1070 'includes a single blade 1074 "having two sets of three or more tabs 1076", 1076 "' for receiving the substrate 1045 '. One blade 1074 "is coupled to a drive arm 1072" that couples the substrate lifter assembly 1070 'to the heat treatment chamber 1010, and the drive arm 1072 "is translated in the vertical direction of the blade 1072" in the heat treatment chamber 1010 as described above. The tabs 1076 ", 1076" 'are configured to grip the substrate 1045' in the raised position and receive in the pedestal 1042 "when in the lowered position. Retract into the cavity. The drive system 1078 includes a hydraulic drive system designed to meet various requirements including, for example, cylinder stroke length, cylinder stroke speed, position accuracy, non-rotation regime, etc., and the design is in the field of hydraulic drive system design. Known to those skilled in the art.

  Further, as shown in FIG. 11A, the thermal processing system 1000 further includes a substrate detection system that includes one or more detectors 1022 to determine whether the substrate is located on the holding surface. The substrate detection system can gain light access through one or more light windows 1024. The substrate detection system may include, for example, a Keyence digital laser sensor.

  Still referring to FIG. 11A, the thermal processing system 1000 further includes an evacuation system 1080. The evacuation system 1080 can include, for example, a vacuum pump and a throttle valve such as a gate valve or a butterfly valve. The vacuum pump can comprise, for example, a turbomolecular vacuum pump (TMP) capable of pumping speeds up to about 5000 liters per second (or higher). TMP is generally useful for low pressure processing below about 50 mTorr. For high pressure processing (ie, higher than about 100 mTorr), mechanical booster pumps and dry roughing pumps can be used.

  Still referring to FIG. 11A, the thermal processing system 1000 can further include a control system 1090, which includes a microprocessor, memory and digital I / O ports, such as a temperature and pressure sensing device. A control voltage sufficient to monitor the output from the heat treatment system 1000 and to communicate and operate the input to the heat treatment system 1000 can be generated. Further, the control system 1090 can be coupled to and exchange information with a substrate holder temperature control unit 1060, an upper assembly 1020, a gas injection system 1050, a substrate detection system, an evacuation system 1080, and a substrate lifter assembly 1070. can do. For example, a program stored in the memory can be used to activate inputs to the above-described components of the heat treatment system 1000 according to a processing recipe.

  The control system 1090 may be disposed at a local position with respect to the heat treatment system 1000, or may be disposed at a remote position with respect to the heat treatment system 1000 via the Internet or an intranet. Accordingly, the control system 1090 can exchange data with the thermal processing system 1000 using at least one of a direct connection, the Internet, or an intranet. The control system 1090 may be coupled to the Internet on the customer side (ie, device manufacturer, etc.), or may be coupled to the Internet on the vendor side (ie, device manufacturer). In addition, other computers (ie, controllers, servers, etc.) can access the control system 1090 to exchange data via at least one of a direct connection, the Internet, or an intranet.

  In an alternative embodiment, control system 590 and control system 1090 may be the same control system.

  FIG. 14 illustrates a method of operating a processing platform including a chemical processing system and a heat treatment system. The method is shown as a flowchart 1400 that begins at step 1410, where a plurality of substrates are transferred to a chemical processing system using a substrate transfer system. The substrate is received by lift pins housed in one or more substrate holders, and the substrate is lowered to the one or more substrate holders. Thereafter, the substrate may rest on one or more substrate holders for processing. Alternatively, the substrate may be secured to one or more substrate holders using a clamping system, such as an electrostatic clamping system, and the heat transfer gas is supplied to the back side of the substrate.

In step 1420, one or more process parameters for chemical processing of the substrate are set. For example, the one or more chemical processing parameters may include at least one of chemical processing pressure, chemical processing wall temperature, chemical processing substrate holder temperature, chemical processing substrate temperature, chemical processing gas distribution system temperature, and chemical processing gas flow rate. Including. For example, one or more of the following may occur. That is,
1) A controller coupled to the wall temperature control unit and the first temperature sensing device is utilized to set the chemical processing chamber temperature for the chemical processing chamber.
2) A controller coupled to the gas distribution system temperature control unit and the second temperature sensing device is utilized to set the chemical process gas distribution system temperature for the chemical process chamber.
3) A controller coupled to the at least one temperature control element and the third temperature sensing device is utilized to set the chemical processing substrate holder temperature.
4) At least one of a temperature control element, a backside gas supply system and a clamping system, and a controller coupled to a fourth temperature sensing device in the substrate holder are utilized to set the chemical processing substrate temperature.
5) At least one of an evacuation system and a gas distribution system and a controller coupled to the pressure sensing device is utilized to set the processing pressure in the chemical processing chamber.
6) The mass flow rate of one or more process gases is set by a controller coupled to one or more mass flow controllers in the gas distribution system.

  In step 1430, the substrate is chemically processed under the conditions set in step 1420 for a first period. The first period can range from, for example, about 10 to about 480 seconds.

  In step 1440, the substrate is transferred from the chemical processing system to the thermal processing system. During this time, the optional substrate clamp is removed and the optional flow of heat transfer gas to the back side of the substrate is stopped. The substrate is raised vertically from one or more substrate holders to the transfer surface using a lift pin assembly. The transfer system receives the substrate from the lift pins and positions the substrate within the thermal processing system. At that point, the substrate lifter assembly receives the substrate from the transfer system and lowers the substrate to the substrate holder.

In step 1450, one or more heat treatment parameters for heat treatment of the substrate are set. For example, the one or more heat treatment parameters include at least one of a heat treatment wall temperature, a heat treatment upper assembly temperature, a heat treatment substrate temperature, a heat treatment substrate holder temperature, and a heat treatment processing pressure. For example, one or more of the following may occur. That is,
1) A controller coupled to the first temperature sensing device in the heat treatment chamber and the hot wall temperature control unit is used to set the heat treatment wall temperature.
2) A controller coupled to the second temperature sensing device in the upper assembly and the upper assembly temperature control unit is utilized to set the thermal processing upper assembly temperature.
3) A controller coupled to the third temperature sensing device in the heated substrate holder and the substrate holder temperature control unit is utilized to set the heat treatment substrate holder temperature.
4) A controller coupled to the fourth temperature sensing device and substrate holder temperature control unit in the heated substrate holder and coupled to the substrate is utilized to set the thermal processing substrate temperature.
5) A controller coupled to the evacuation system, gas distribution system and pressure sensing device is utilized to set the heat treatment processing pressure in the heat treatment chamber.

  In step 1460, the substrate is heat treated under the conditions set in step 1450 for a second period. The second period can range from, for example, about 10 to about 480 seconds.

  In one example, a processing platform as shown in FIGS. 1-4, including the chemical processing system of FIG. 5 and the thermal processing system of FIGS. 11A and 11B, performs a dry non-plasma etching process or a dry non-plasma cleaning process. It may be configured. For example, the process may be used to remove residues and other contaminants from the surface of the substrate. Further, for example, the treatment may include a chemical oxide removal treatment.

  The processing platform includes a chemical processing system for chemically processing an exposed layer, such as an oxidized surface layer, on a substrate, whereby adsorption of process chemistry on the exposed surface is performed on the surface layer. Affects chemical conversion. The processing platform also includes a heat treatment system for heat treating the substrate, whereby the substrate temperature is raised to desorb (or evaporate) a chemically altered exposed surface layer on the substrate. .

In a chemical processing system, the processing space may be operated in the atmosphere described above, at atmospheric pressure or under reduced pressure conditions. A process gas comprising HF and optionally NH ₃ is introduced. Alternatively, the processing gas can further include a carrier gas. The carrier gas can include, for example, an inert gas such as argon, xenon, or helium. The processing pressure may range from about 1 to about 1000 mTorr. Alternatively, the processing pressure can range from about 10 to about 500 Torr. The process gas flow rate may range from about 1 to about 10,000 sccm for each gas species. Alternatively, the flow rate can range from about 10 to about 500 sccm.

  Further, the chemical processing chamber can be heated to a temperature in the range of about 10 ° C to about 200 ° C. Alternatively, the chamber temperature (chamber temperature) can range from about 30 ° C to about 100 ° C. Further, the gas distribution system can be heated to a temperature in the range of about 10 ° C to about 200 ° C. Alternatively, the gas distribution system temperature can range from about 30 ° C to about 100 ° C. The substrate can be maintained at a temperature in the range of about 10 ° C to about 80 ° C. Alternatively, the substrate temperature can range from about 25 ° C to about 60 ° C.

  In a heat treatment system, the heat treatment chamber can be heated to a temperature in the range of about 20 ° C to about 200 ° C. Alternatively, the chamber temperature (chamber temperature) can range from about 100 ° C to about 150 ° C. Also, the upper assembly can be heated to a temperature in the range of about 20 ° C to about 200 ° C. Alternatively, the upper assembly temperature can range from about 100 ° C to about 150 ° C. The substrate holder can be heated to a temperature above about 100 ° C., for example in the range of about 100 ° C. to about 200 ° C. The substrate can be heated to a temperature above about 100 ° C., for example in the range of about 100 ° C. to about 200 ° C.

  In other embodiments, one or more surfaces of the components including the chemical processing chamber 510 (FIG. 5) and the heat treatment chamber 1010 (FIGS. 11A, 11B) can be coated with a protective barrier. The protective barrier may include a ceramic coating, a plastic coating, a polymer coating, a vapor deposition coating, and the like. For example, the protective barrier may be polyimide (Kapton (registered trademark)), polytetrafluoroethylene resin (for example, Teflon (registered trademark) PTFE), polyfluoroalkoxyl (PFA) copolymer resin (for example, Teflon (registered trademark) PFA), A fluorinated ethylene propylene resin (for example, Teflon (registered trademark) PEA), a surface anodized layer, a ceramic spray coating (alumina, yttria, etc.), and a plasma electrolytic oxidized layer may be included.

Referring to FIG. 15, a chemical oxide removal process is performed in which a process gas containing HF and NH ₃ is introduced into a chemical processing system for chemically changing the surface layer of the SiO ₂ film. Thereafter, the chemically modified surface layer of the SiO ₂ film is removed with a heat treatment system. As shown in FIG. 15, the etching amount (nm) of the SiO ₂ film is provided as a function of the HF partial pressure (mTorr) for a given setting of processing conditions (ie, pressure, temperature, etc.). For the first set of data (dashed lines, open squares), the surface that is exposed to chemical treatment in the chemical treatment system contains exposed aluminum. For a second set of data (solid line, x) that uses the same processing conditions as the first set of data, one or more surfaces that are exposed to chemical treatment in the chemical treatment system are coated with PTFE. including. In this example, PTFE is applied to the underside of the substrate holder of the chemical processing system. As shown in FIG. 15, application of a coating to one or more exposed aluminum surfaces that are exposed to a chemical treatment causes an increase in the amount of etching. The coating is suspected to reduce HF reactant gettering, thereby reducing the amount of HF consumed by the exposed aluminum surface in the formation of NH ₄ F on the surface.

Referring to FIG. 16, a method for increasing the dry non-plasma etch rate is provided by way of example. The method is shown as a flowchart 1600 that begins at step 1610 of performing a chemical treatment process in a chemical treatment system. The chemical treatment process may include a dry non-plasma chemical oxide removal process, in which one or more substrates are exposed to a gas environment comprising HF and optionally NH ₃ . The gas environment may further include a noble gas, such as an inert gas.

  In step 1620, the heat treatment process is performed in a heat treatment system. The heat treatment process includes increasing the temperature of one or more substrates to remove a surface layer that has been chemically modified by the chemical treatment process.

In step 1630, a coating is applied to one or more substrates in the chemical processing chamber to increase the amount of etching achieved for each set of chemical processing and heat treatment process steps. The coating may comprise any one of the materials described above. The coating may prevent or reduce sorption of ammonium fluoride (NH ₄ F) onto the internal surface of the chemical processing system. The internal surface of the chemical processing system may include a chemical processing chamber, a temperature controlled substrate holder or gas injection assembly, or any combination thereof.

  Although only certain embodiments of the present invention have been described in detail, those skilled in the art will readily appreciate the many variations that are possible in these embodiments without significantly departing from the novel teachings and advantages of the present invention. I will. Accordingly, all such modifications are intended to be included within the scope of this invention.

Claims (61)

A processing system for chemically processing a plurality of substrates,
A chemical processing system, a chemical processing chamber, a temperature-controlled substrate holder mounted in the chemical processing chamber and configured to support two or more substrates on a supporting surface thereof, and the chemical processing chamber And a gas injection assembly configured to introduce one or more process gases into a processing space in the chemical processing chamber to chemically change an exposed surface layer on the two or more substrates. A chemical processing system including: a heater assembly coupled to the gas injection assembly and configured to increase a temperature of the gas injection assembly; and a vacuum exhaust system coupled to the chemical processing chamber;
A heat treatment system, wherein the heat treatment chamber is mounted in the heat treatment chamber and configured to support two or more substrates, and the two or more in order to heat treat the chemically altered exposed surface layer. Between one or more temperature-controlled substrate holders including a mechanism for raising the temperature of the heat-treated substrate of the substrate, and between the transfer surface and the one or more temperature-controlled substrate holders coupled to the heat treatment chamber A heat treatment system comprising: a substrate lifter assembly for vertically transferring the two or more substrates; and a vacuum exhaust system coupled to the heat treatment chamber and configured to discharge a gas product of the heat treatment, and ,
An isolation assembly coupled to the chemical processing system and the thermal processing system, the dedicated substrate configured to transport the two or more substrates into and out of the chemical processing system and the thermal processing system An isolation assembly, including a handler,
Including processing system.   A controller coupled to at least one of the chemical processing system and the thermal processing system, the chemical processing chamber temperature, the chemical processing gas distribution system temperature, the chemical processing substrate holder temperature, the chemical processing substrate temperature, the chemical processing pressure, At least one of setting, monitoring and adjusting at least one of a processing gas flow rate, a heat treatment chamber temperature, a heat treatment substrate holder temperature, a heat treatment substrate temperature, a heat treatment processing pressure, and a heat treatment gas flow rate. The processing system of claim 1, further comprising a controller configured to perform any one.   The processing system of claim 1, wherein the isolation assembly provides at least one of thermal isolation and vacuum isolation.   The processing system of claim 1, wherein the gas injection assembly includes a temperature controlled portion that is exposed to the one or more processing gases in the chemical processing chamber.   The processing system of claim 1, wherein the temperature of the chemical processing chamber is controlled.   The one or more process gases include a first process gas and a second process gas, and the gas injection assembly is configured to introduce the first process gas independently of the second process gas. The processing system according to claim 1.   The processing system of claim 6, wherein the gas injection assembly is configured to distribute the first processing gas and the second processing gas over the two or more substrates. The processing system according to claim 1, wherein the first processing gas includes HF, and the second processing gas includes NH ₃ . The temperature-controlled substrate holder is
A temperature controlled substrate table having the support surface configured to support the two or more substrates, a lower surface opposite the upper surface, and an edge surface;
A closed flow path formed inside the substrate table to be temperature controlled;
Two or more struts configured to support the temperature controlled substrate table at a distance from a wall of the chemical processing chamber, each strut being coupled to the lower surface of the substrate table. The processing system of claim 1, comprising two or more struts including a first end having a second end coupled to the wall of the chemical processing chamber. The temperature-controlled substrate holder further includes:
A fluid heat unit constructed and arranged to control the temperature of the heat transfer fluid;
A first fluid tube formed through one of the two or more struts for receiving the heat transfer fluid from the fluid heat unit and supplying the heat transfer fluid to an inlet end of the closed flow path system; A first fluid pipe configured to:
A second fluid tube formed through the other of the two or more struts, the second fluid tube configured to receive the heat transfer fluid from an outlet end of the closed flow path system; The processing system of claim 9, comprising: The temperature-controlled substrate holder further includes:
A passage of a first array of lift pins through the temperature controlled substrate table is configured to allow the first substrate to rise to and from the upper surface of the temperature controlled substrate table. A first array of three lift pin holes;
A passage of a second array of lift pins through the temperature controlled substrate table is configured to allow the second substrate to rise to and from the upper surface of the temperature controlled substrate table. The processing system of claim 9, comprising a second array of three lift pin holes. A lift pin support member;
A first array of lift pins configured to pass through the first array of lift pin holes, wherein each lift pin is configured to contact the first substrate; and A first array of lift pins including a first support end coupled to the lift pin support member;
A second array of lift pins configured to pass through and aligned with the second array of lift pin holes, each lift pin configured to contact the second substrate; and A second array of lift pins including a second support end coupled to the lift pin support member;
A drive system coupled to the chemical processing chamber, wherein the first array of lift pins translates through the first array of lift pin holes and the second array of lift pins passes through the second array of lift pin holes. 12. A substrate holder according to claim 11, including a drive system configured to translate the lift pin support member to translate. A heater assembly, the heater assembly comprising:
A plate member having an upper surface;
A plurality of resistance heating elements coupled to the upper surface of the plate member;
Each of the plurality of resistance heating elements includes a first end fixedly coupled to the upper surface of the plate member, a second end configured to be coupled to a power source, the first end, and the first end A bent portion located between two ends, a first straight portion extending between the first end and the bent portion, and a second straight portion extending between the second end and the bent portion, Including
At least two of the plurality of resistive heating elements are arranged as pairs that interleave on the upper surface of the plate member;
The processing system of claim 1, wherein the power source comprises a direct current (DC) power source or an alternating current (AC) power source.   The processing system of claim 1, wherein the chemical treatment chamber is configured to promote non-plasma chemical treatment, and the heat treatment chamber is configured to promote non-plasma heat treatment.   The one or more temperature controlled substrate holders coupled to the heat treatment chamber include a plurality of temperature controlled substrate holders, each of the plurality of temperature controlled substrate holders including the two or more substrates. The processing system of claim 1, wherein each of the substrates is individually supported.   The substrate lifter assembly includes a separate lift assembly for each of the two or more substrates, and the separate lift assembly for each of the two or more substrates includes the two or more substrates. The processing system of claim 1, comprising: a blade member configured to support one; and a drive system coupled to the blade member and configured to translate the blade member in a vertical direction. .   The processing system of claim 17, wherein the drive system comprises a hydraulic drive system.   The processing system according to claim 1, wherein the heat treatment system includes means for introducing a purge gas into the heat treatment chamber. The processing system of claim 18, wherein the purge gas comprises N ₂ .   The isolation assembly includes a transfer system coupled directly to the heat treatment system and coupled to the chemical treatment system via the heat treatment system, the transfer system including the two in and out of the heat treatment system. 2. The dedicated substrate handler configured to transfer the substrates and transport the two or more substrates into and out of the chemical processing system by passing through the thermal processing system. The processing system described. A processing system for chemically processing a plurality of substrates,
A chemical treatment room,
A temperature controlled substrate holder mounted in the chemical processing chamber and configured to support two or more substrates on its support surface;
Coupled to the chemical processing chamber and configured to introduce one or more processing gases into a processing space in the chemical processing chamber to chemically change an exposed surface layer on the two or more substrates. A gas injection assembly;
A heater assembly coupled to the gas injection assembly and configured to increase a temperature of the gas injection assembly;
A vacuum pumping system coupled to the chemical processing chamber.   The processing system of claim 21, wherein the gas injection assembly includes a temperature controlled portion where the one or more processing gases within the chemical processing chamber are exposed.   The processing system of claim 21, wherein the temperature of the chemical processing chamber is controlled.   The processing system of claim 21, wherein the chemical processing chamber is coupled to another processing system.   The processing system according to claim 21, wherein the chemical processing chamber is coupled to at least one of a heat treatment system and a substrate rinsing processing system.   The one or more process gases include a first process gas and a second process gas, and the gas injection assembly is configured to introduce the first process gas independently of the second process gas. The processing system according to claim 21. The gas injection assembly includes:
A first gas distribution plenum and a first gas distribution plate, wherein the first gas distribution plate passes through the first array of one or more orifices and through the first array of one or more orifices the processing space; A first gas distribution plenum and a first gas distribution plate having a second array of one or more orifices for coupling the first process gas to
A second gas distribution plenum and a second gas distribution plate, wherein the second gas plate has a passageway, and the process passes through the passage and the second array of one or more orifices of the first gas distribution plate. 27. The processing system of claim 26, wherein a second gas distribution plenum and a second gas plate couple the second process gas to space.   27. The processing system of claim 26, wherein the gas injection assembly is configured to distribute the first processing gas and the second processing gas over the two or more substrates. The processing system according to claim 21, wherein the first processing gas includes HF, and the second processing gas includes NH ₃ . The temperature-controlled substrate holder is
A temperature controlled substrate table having the support surface configured to support the two or more substrates, a lower surface opposite the support surface, and an edge surface;
A flow path formed in the temperature-controlled substrate table;
Two or more struts configured to support the temperature controlled substrate table at a distance from a wall of the chemical processing chamber, each strut being coupled to the lower surface of the substrate table. 23. The processing system of claim 21, comprising two or more struts including a first end having a second end coupled to the wall of the chemical processing chamber. The temperature-controlled substrate holder further includes:
A fluid heat unit constructed and arranged to control the temperature of the heat transfer fluid;
A first fluid pipe formed through one of the two or more struts, configured to receive the heat transfer fluid from the fluid heat unit and supply the heat transfer fluid to an inlet of the flow path A first fluid pipe formed;
A second fluid tube formed through the other of the two or more struts, the second fluid tube configured to receive the heat transfer fluid from an outlet end of the flow path. Item 30. The processing system according to Item 30. The temperature-controlled substrate holder further includes:
A controller coupled to the fluid heat unit and configured to perform at least one of monitoring, adjusting and controlling the temperature of the heat transfer fluid;
A temperature sensor coupled to the temperature controlled substrate holder and configured to measure a substrate holder temperature;
The controller compares the substrate holder temperature with a target substrate holder temperature, and the controller reduces the temperature of the heat transfer fluid and the heat transfer fluid so as to reduce a difference between the substrate holder temperature and the target substrate holder temperature. 32. The processing system of claim 31, wherein the flow rate or a combination thereof is controlled. The temperature-controlled substrate holder further includes:
Configured to allow a first array of lift pins to pass through the temperature controlled substrate table to raise the first substrate to and from the upper surface of the temperature controlled substrate table. A first array of three lift pin holes;
Configured to allow a second array of lift pins to pass through the temperature controlled substrate table to raise the second substrate to and from the upper surface of the temperature controlled substrate table. 32. The processing system of claim 30, including a second array of three lift pin holes. A lift pin support member;
A first array of lift pins configured to pass through the first array of lift pin holes, wherein each lift pin is configured to contact the first substrate; and A first array of lift pins including a first support end coupled to the lift pin support member;
A second array of lift pins configured to pass through and aligned with the second array of lift pin holes, each lift pin configured to contact the second substrate; and A second array of lift pins including a second support end coupled to the lift pin support member;
A drive system coupled to the chemical processing chamber, wherein the first array of lift pins translates through the first array of lift pin holes and the second array of lift pins passes through the second array of lift pin holes. 34. The processing system of claim 33, further comprising a drive system configured to translate the lift pin support member to translate. The heater assembly includes:
A plate member having an upper surface;
A plurality of resistance heating elements coupled to the upper surface of the plate member;
Each of the plurality of resistance heating elements includes a first end fixedly coupled to the upper surface of the plate member, a second end configured to be coupled to a power source, the first end, and the first end A bent portion located between two ends, a first straight portion extending between the first end and the bent portion, and a second straight portion extending between the second end and the bent portion, Including
At least two of the plurality of resistance heating elements have at least two first first ends of the plurality of resistance heating elements at least two of the plurality of resistance heating elements. 2 so as to be positioned in the vicinity of the inner edge of the bent portion in 2;
The processing system of claim 21, wherein the power source comprises a direct current (DC) power source or an alternating current (AC) power source.   The processing system of claim 21, wherein the chemical processing chamber is configured to facilitate non-plasma chemical processing. The processing system of claim 21, wherein the chemical processing chamber is configured for a gas environment comprising HF and optionally NH ₃ .   The coating is applied to at least a portion of the chemical processing chamber, at least a portion of the temperature-controlled substrate holder, at least a portion of the gas injection assembly, or any combination of two or more thereof. The processing system according to 21.   40. The processing system of claim 38, wherein the coating comprises polytetrafluoroethylene. The coating is made of ammonium fluoride (NH ₄ F) on the surface of the chemical processing chamber, the temperature-controlled substrate holder, the gas injection assembly, or any combination thereof to which the coating is applied. The processing system of claim 21, comprising a material that prevents or reduces sorption. A method of operating a processing system for chemically processing a substrate, comprising:
A chemical processing chamber, a temperature-controlled substrate holder mounted in the chemical processing chamber and configured to support two or more substrates on a support surface thereof, and coupled to the chemical processing chamber, the two A gas injection assembly configured to introduce one or more processing gases into a processing space in the chemical processing chamber in order to chemically change the exposed surface layer on the substrate; and the gas injection assembly Two or more substrates in a chemical processing system including a heater assembly coupled to the gas injection assembly and configured to raise a temperature of the gas injection assembly, an evacuation system, and a controller coupled to the thermal processing system Transport,
For the chemical processing system comprising at least one of a chemical processing pressure, a chemical processing chamber temperature, a chemical processing upper assembly temperature, a flow rate of the one or more processing gases, a chemical processing substrate temperature, and a chemical processing substrate holder temperature Set the chemical processing parameters of the controller using the controller,
Treating the two or more substrates in the chemical processing system with the chemical processing parameters to chemically change an exposed surface layer on the two or more substrates. A processing system for heat-treating a plurality of substrates,
A heat treatment chamber in which the temperature of the heat treatment chamber is controlled;
One or more temperature controlled substrate holders mounted in the heat treatment chamber and configured to support two or more substrates, wherein the chemically altered exposed surface layer thereon is heat treated. One or more temperature-controlled substrate holders including a mechanism for raising a heat treatment substrate temperature of the two or more substrates to achieve
A transfer system coupled to the heat treatment chamber for transferring the two or more substrates into and out of the heat treatment chamber;
A substrate lifter assembly coupled to the heat treatment chamber for vertically transferring the two or more substrates between a transfer surface and the one or more temperature controlled substrate holders;
A vacuum pumping system coupled to the heat treatment chamber and configured to discharge a gas product of the heat treatment.   43. The processing system of claim 42, wherein the thermal processing chamber is configured to be coupled to a chemical processing chamber configured to chemically change an exposed surface layer on the two or more substrates.   43. The processing system of claim 42, wherein the one or more temperature controlled substrate holders include a single temperature controlled substrate holder configured to support all of the two or more substrates.   The one or more temperature controlled substrate holders include a plurality of temperature controlled substrate holders, each of the plurality of temperature controlled substrate holders individually corresponding to one substrate of the two or more substrates. 43. The processing system of claim 42, wherein the processing system is supported.   The substrate lifter assembly is coupled to the single blade member configured to support the two or more substrates and the blade member to translate the single raid member in a vertical direction. 43. The processing system of claim 42, comprising a configured drive system.   The processing system of claim 46, wherein the drive system comprises a hydraulic drive system.   The substrate lifter assembly includes a separate lift assembly for each of the two or more substrates, and the separate lift assembly for each of the two or more substrates includes the two or more substrates. 43. A processing system according to claim 42, comprising a blade member configured to support one and a drive system coupled to the blade member and configured to translate the blade member in a vertical direction. .   49. The processing system of claim 48, wherein the drive system comprises a hydraulic drive system.   43. The processing system of claim 42, further comprising a substrate detection system coupled to the thermal processing chamber and configured to detect the presence of the two or more substrates on the substrate lifter assembly.   A controller coupled to at least one of the heat treatment chamber, the temperature controlled substrate holder, the substrate lifter assembly, and the evacuation system, wherein the heat treatment chamber temperature, the heat treatment substrate holder temperature, the heat treatment substrate temperature, and the heat treatment treatment 43. The controller of claim 42, further comprising a controller configured to perform at least one of setting, monitoring, and adjusting at least one of the processing pressures. Processing system.   43. The processing system of claim 42, wherein the one or more temperature controlled substrate holders include at least one of a thin film heater, a cast heater, a resistive element, a heating path, a radiant lamp, and a thermoelectric device.   The processing system according to claim 42, wherein the heat treatment chamber includes at least one of a cooling path, a heating path, a resistance heating element, a radiant lamp, and a thermoelectric device.   43. The processing system of claim 42, further comprising a temperature controlled upper assembly.   55. The upper assembly is configured to perform at least one of introducing a purge gas into the thermal processing chamber and detecting the presence of the substrate on the substrate lifter assembly. The processing system described.   43. The processing system of claim 42, wherein each of the one or more temperature controlled substrate holders is manufactured from metal, and at least one surface of each of the temperature controlled substrate holders includes a coating.   57. The processing system of claim 56, wherein the coating comprises a silicon-containing material applied using a vapor deposition process. A method of operating a processing system for heat treating a substrate, comprising:
A heat treatment chamber; one or more temperature-controlled substrate holders mounted in the heat treatment chamber; and the two between the transfer surface and the one or more temperature-controlled substrate holders coupled to the heat treatment chamber. Transferring two or more substrates into a substrate lifter assembly for transferring one or more substrates vertically, an evacuation system, a controller coupled to the heat treatment system and the heat treatment system;

Using the controller to set thermal processing parameters for the thermal processing system including at least one of a thermal processing pressure, a thermal processing chamber temperature, a thermal processing substrate temperature, and a thermal processing substrate holder temperature;
Treating the two or more substrates in the thermal processing system with the thermal processing parameters to evaporate chemically altered exposed surface layers on the two or more substrates. The heat treatment chamber temperature ranges from about 20 ° C. to about 200 ° C .;
The heat treatment substrate holder temperature exceeds about 100 ° C.,
59. The method of claim 58, wherein the heat treated substrate holder temperature is greater than about 100 degrees Celsius. The heat treatment chamber temperature ranges from about 100 ° C. to about 150 ° C .;
The heat treatment substrate holder temperature exceeds about 150 ° C.,
59. The method of claim 58, wherein the heat treated substrate holder temperature is greater than about 100 degrees Celsius.   59. The method of claim 58, wherein setting a thermal processing parameter for the heat treatment system using the controller further comprises setting a flow rate for a purge gas introduced into the heat treatment chamber.

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