JP2007100123A - Vacuum vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve problems of a conventional vacuum vapor deposition apparatus, wherein a work holder can rotate merely in a fixed wide-angle step because a self rotation mechanism of the work holder is an indirect mechanical rotating mechanism having no direct driving source, and the work holder can have only a fixed angle of a rotation axis with respect to an evaporation source because the work holder is installed on the support holder at a predetermined angle, and makes a part of the surface of an article to be vapor-deposited (side face in particular) so as not to be exposed to the evaporation source in a facing direction. <P>SOLUTION: In a vacuum deposition apparatus provided with a mechanism for vapor-depositing evaporated particles that have been heated in and evaporated from the evaporation source in a vapor deposition furnace, onto a plurality of work-pieces to be vapor-deposited which are composed of a wafer to be vapor-deposited and a mask, rotating on their axes and revolving in the vapor deposition furnace; the vacuum deposition apparatus has a work holder for holding and rotating the work-pieces on its axes, which is provided with a two-axis self rotation mechanism comprising a first rotation mechanism for rotating the work holder itself and a second rotation mechanism for rotating the work-pieces held on the work holder. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vacuum deposition apparatus, and more particularly to a vacuum deposition apparatus suitable for forming a deposited film on the entire surface of a three-dimensional structure deposition target.

  Conventionally, as this type of vacuum vapor deposition apparatus, a vacuum vapor deposition apparatus, a sputtering apparatus, and the like have been generally used. As an example, there is a vacuum vapor deposition apparatus as illustrated in FIG. That is, this vacuum vapor deposition apparatus 30 holds a wafer such as a circular or rectangular crystal thin plate to be subjected to film formation inside a vapor deposition furnace 32 provided with a vacuum pump 31 that evacuates the tank to a vacuum, In addition, a configuration in which a work holder 34 holding a deposition target workpiece 33 tilted so that the wafer surface substantially faces the deposition source rotates in a certain angular step, and a support holder 35 that supports a plurality of workpiece holders 34 are provided. is set up. The support holder 35 is connected to a mechanism that is rotationally driven after being fixedly supported on the upper portion of the vapor deposition furnace 32 that is evacuated to high vacuum. Further, an evaporation source 36 that heats and evaporates the metal to be deposited is placed in the lower part of the deposition furnace 32.

  At this time, the support holder 35 is connected to a motor 37 which is a rotational drive source installed outside the deposition furnace through a revolution driving hook, and the work to be deposited 33 has a rotation axis of the work holder 34. By rotating around the shaft and revolving by the support holder 35, a vapor deposition film is uniformly formed on the wafer surface within the vapor deposition workpiece 33.

  The following documents are disclosed about the vacuum evaporation apparatus as described above.

JP-A-4-329869 JP-A-10-88325

  In addition, the applicant has not found any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

  In the vacuum deposition apparatus as described above, the rotation mechanism of the work holder can usually rotate only at a constant wide angle step because of an indirect mechanical rotation mechanism that does not directly have a drive source. In addition, since the work holder is installed at a predetermined inclination on the support holder, the inclination of the rotation axis of the work holder becomes constant with respect to the vapor deposition source, and the surface of the deposition object (particularly the side surface) that cannot be exposed to the vapor deposition source. ) Will occur. For this reason, it is very difficult to form a vapor deposition film on a specific portion such as a side surface of a wafer held in the work to be vapor deposited. Even if a vapor deposition film is formed on the side surface of the wafer, the film thickness of the vapor deposition film is not uniform and the film quality is poor, and it is very difficult to accurately control the formation form of these vapor deposition films.

  In recent years, it has become necessary to form a deposited film on the surface of a wafer having a complicated shape, not just a circular or rectangular wafer. In such a wafer, not only the main surface but also a side surface has a predetermined surface. It is becoming necessary to form a vapor deposition film that is uniform in film thickness. For example, in a sensor element using a quartz wafer, it is necessary to accurately form an excitation or detection electrode film and its routing electrode on the side surface of the quartz wafer.

  The present invention has been made to solve the above-described problems, and vaporized particles heated and evaporated from an evaporation source in a vapor deposition furnace are composed of a deposition target wafer and a mask and revolve in the vapor deposition furnace. In a vacuum deposition apparatus having a mechanism for depositing a plurality of deposition workpieces, a workpiece holder that holds and rotates a deposition workpiece is held by a first rotation mechanism that rotates the workpiece holder itself and the workpiece holder. A vacuum vapor deposition apparatus comprising a two-axis rotation mechanism with a second rotation mechanism for rotating a work to be deposited.

  Further, the first rotation mechanism and the second rotation mechanism are constituted by a Geneva mechanism.

  Therefore, the first rotation mechanism and the second rotation mechanism provided in the work holder are constituted by the Geneva mechanism by the vacuum vapor deposition apparatus of the present invention, so that the first rotation mechanism and the second rotation mechanism are narrow-angled. It can be rotated in steps. Further, the second rotation mechanism allows the work to be deposited to take a free angle with respect to the deposition source. As a result, the evaporated particles evaporated from the deposition source are easily deposited on the side surface of the wafer held in the deposition work, and the film thickness of the deposited film is uniform. Further, by controlling the first rotation mechanism and the second rotation mechanism of the work holder, it becomes possible to accurately manage the formation form of the vapor deposition film.

  Therefore, the above-described operation produces an effect of providing a vacuum vapor deposition apparatus that can form a vapor deposition film with a uniform thickness on all unmasked surfaces of the wafer.

The present invention will be described with reference to the drawings.
FIG. 1 is a schematic diagram illustrating an in-furnace configuration of a vacuum vapor deposition apparatus according to the present invention. FIG. 2 is a schematic external view showing the work holder portion shown in FIG.
In each drawing, for the sake of clarity, a part of the structure is not shown, and some dimensions are exaggerated.

  That is, in FIG. 1, the vapor deposition furnace 10 which comprises the vacuum vapor deposition apparatus 1 has a mechanism which can evacuate the inside of a furnace to the vacuum by the vacuum pump 11 directly connected to the space in the furnace. Further, an evaporation source 12 is formed in the lower part of the vapor deposition furnace 10 so that a metal such as Au or Ni—Cr can be placed on the upper part to heat and evaporate the metal. The metal particles adhere to the surface of the deposition object such as a crystal thin plate or glass held in the deposition work 13 to be described later, which is not covered with the mask that constitutes the deposition work 13. A vapor deposition film is formed on the surface.

  In the upper part of the vapor deposition furnace 10, a wafer such as a crystal thin plate or glass on which a vapor deposition film is to be formed is held inside, and the work to be vapor-deposited 13 is inclined so that the wafer surface in the initial setting posture is generally directed to the vapor deposition source. And a support holder 15 for supporting a plurality of work holders 14 (two in FIG. 1).

  As shown in FIG. 1, the work holder 14 holding the deposition target workpiece 13 includes a first rotation mechanism for rotating the work holder 14 itself and the deposition target workpiece 13 held by the work holder 14 as shown in FIG. A two-axis rotation mechanism with a second rotation mechanism to be rotated is provided. In addition, since the two-axis rotation mechanism is constituted by a Geneva mechanism, and is a mechanism that rotates in conjunction with each other, the angle of each rotation step can be set narrow. These rotation mechanisms are built in the work holder 14 and the support holder 15.

  Further, the support holder 15 to which the work holder 14 is connected is connected to a mechanism that is fixedly supported on the upper portion of the vapor deposition furnace 10 that is evacuated to high vacuum and then rotated. The support holder 15 is driven to revolve. It is connected to a motor 17 that is a rotational drive source installed outside the vapor deposition furnace 10 through a hook 16 for the vapor deposition, and the work 13 to be vapor-deposited rotates around the two rotation axes of the work holder 14 in two axes. Revolved by the support holder 15.

  In this way, by inserting the work to be vapor-deposited 13 into the metal particles evaporated from the evaporation source 12 while rotating in the vapor deposition furnace 10 by the respective self-revolving mechanisms of the work holder 14 and the support holder 15, three types of auto-revolution are achieved. By the rotation mechanism, the main surface and the side surface of the deposition target such as a quartz thin plate or glass held in the deposition target workpiece 13 that are not covered with the mask constituting the deposition target workpiece 13 are directed in the direction of the evaporation source. It can be exposed face-to-face, metal particles can be uniformly attached to a desired surface including the main surface and side surfaces of the wafer in the work 13 to be vapor-deposited, and it is possible to form a vapor-deposited film having no formation defects It becomes.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

FIG. 1 is a schematic diagram illustrating an in-furnace form of a vacuum vapor deposition apparatus according to the present invention. FIG. 2 is a schematic external view showing the work holder 14 and the work to be deposited 13 shown in FIG. FIG. 3 is a schematic diagram illustrating an in-furnace form of a conventional vacuum vapor deposition apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Vacuum deposition apparatus 10 ... Deposition furnace 11 ... Vacuum pump 12 ... Evaporation source 13 ... Deposition work 14 ... Work holder 15 ... Support holder

Claims (2)

In a vacuum vapor deposition apparatus equipped with a mechanism for vaporizing evaporated particles heated and evaporated from an evaporation source in a vapor deposition furnace to a plurality of vapor deposition workpieces composed of a vapor deposition object and a mask and revolving in the vapor deposition furnace,
Two-axis rotation of a first rotation mechanism that rotates the work holder itself to a work holder that rotates the work to be deposited and a second rotation mechanism that rotates the work to be deposited that is held by the work holder. A vacuum vapor deposition apparatus comprising a mechanism.   The vacuum deposition apparatus according to claim 1, wherein the first rotating mechanism and the second rotating mechanism are configured by a Geneva mechanism.

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