JP2009263762A - Vacuum deposition method and vacuum deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus which does not take a very long time in operations such as vacuuming or opening to atmosphere although a vacuum apparatus generally takes a very long time in such operations when a film is deposited on each of a plurality of surfaces of a work to be film-deposited or a thick film is deposited only on an arbitrary surface of the work to be film-deposited in a high vacuum environment. <P>SOLUTION: The vacuum deposition apparatus has two self-rotating mechanisms of a first self-rotating mechanism 9 and a second self-rotating mechanism 13. The first self-rotating mechanism 9 has a mechanism wherein self-rotation is performed by a fixed angle step in response to the angle between teeth of a first self-rotating gear 6 during revolution by a revolution mechanism, and the second self-rotating mechanism 13 has a mechanism wherein a second self-rotating gear 10 lacking one tooth to the first self-rotating gear 6 is used, self-rotation is performed by an angle step in response to the angle between teeth, and a work to be film-deposited is allowed to face an evaporation source 2 at a position where one tooth of the second self-rotating gear 10 is removed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  In the present invention, the object to be deposited is a three-dimensional object, and a vapor deposition film having good adhesion is formed on the main surface and side surfaces of the vacuum tank, and the film thickness of an arbitrary surface is increased compared to other surfaces. The present invention relates to a vacuum deposition method and a vacuum deposition apparatus that can be carried out without opening to the atmosphere.

  The vacuum evaporation method is a method that creates a thin film by heating and evaporating a material that forms a thin film in a vacuum, and depositing and depositing the vapor on an arbitrary substrate. Since it is a method, it is a widely used film forming method. In this vacuum deposition method, a structure called a planetary type as shown in FIG. 9 is often used. FIG. 9 is a schematic configuration diagram of a conventional vacuum vapor deposition apparatus.

  The planetary vacuum deposition apparatus has an evaporation source 102 arranged in the lower part of the vacuum chamber 101, and has a dome-shaped revolution mechanism 103 in the upper part of the vacuum chamber 101, and is deposited on a deposition jig 104 that revolves by the revolution mechanism 103. A film is attached to form a film. The film formation object is revolved at an arbitrary speed by the revolving mechanism 103, and the evaporant from the evaporation source 102 is deposited on the surface facing the evaporation source 102 to form a thin film. Furthermore, when it is desired to form a film on a plurality of surfaces of the film to be deposited, a rotation mechanism 109 is attached to the revolution mechanism 103, thereby exposing the plurality of surfaces to the evaporation source 102 while performing the revolution and rotation. It is possible to form a film on each surface of the film formation object. The rotation mechanism 109 inserts and removes the rotation cam 107 with the rotation cylinder 108 at a predetermined position, and operates the rotation gear 106 attached to the rotation shaft 105 with the rotation cam 107. There are other sputtering methods as film forming devices in vacuum, but sputtering devices have better film adhesion, film thickness distribution, etc. than vacuum deposition devices, but the disadvantage is that the device price is very expensive. There is.

  A tuning fork type crystal resonator is taken as an example of the film formation. FIG. 2 is a schematic diagram of a tuning fork type crystal resonator. The oscillation frequency of the tuning fork type crystal resonator 17 is determined by the length of the tuning fork branch and the width of the tuning fork branch. The thin film portion at the tip of the tuning fork branch is generally composed of two types of regions, and coarse adjustment is performed during frequency adjustment. A rough adjustment film portion 14 to be performed, and a fine adjustment film portion 15 having a film thickness thinner than that of the rough adjustment film portion 14 for final adjustment of the frequency. A method of removing the rough adjustment film formed at the tip of the tuning fork branch using a laser or the like is widely used. Since the coarse adjustment film portion 14 is generally a region for obtaining a large amount of change in frequency, a metal film having a high density, such as gold, is used, and is further formed with a film thickness of about 1 to 4 μm. The fine-tuning film portion 15 is often formed as a part of the electrode film 16 of the crystal resonator, and the film thickness is about 3000 mm at the maximum, and noble metals such as gold, silver or palladium are often used.

The following documents are disclosed about a vacuum evaporation system.
JP-A-4-329869 JP 2007-100123 A

  When forming a film on the entire surface or a plurality of surfaces of a substantially quadrilateral shape, such as the tip of a tuning fork branch of a tuning fork crystal resonator, a single revolution mechanism and a plurality of rotation mechanisms are used. In the conventional vacuum vapor deposition apparatus, a film having a substantially uniform thickness can be formed on a plurality of surfaces by rotating at an arbitrary rotation angle for each revolution.

  On the other hand, film formation is performed on multiple surfaces, but if it is desired to increase the film thickness of an arbitrary surface, the normal film formation operation performs revolution and rotation, and after forming a film on multiple surfaces with the desired film thickness, once vacuum The tank was opened to the atmosphere, and the operator performed the film formation according to the operation procedure in which the surface on which the film to be deposited was to be deposited was opposed to the evaporation source, and the film was formed only by revolving without rotating. However, when a film is formed in a high vacuum environment (for example, 1E-3 Pa or less) like a vacuum vapor deposition apparatus, there is a problem that it takes a very long time to perform operations peculiar to the vacuum apparatus such as opening to the atmosphere or vacuuming. For example, the time required for evacuation to reach a high vacuum in the vacuum chamber is about 20 minutes, the time for cooling the evaporation source immediately after vapor deposition is about 10 minutes, and further, it is necessary to open the vacuum chamber to the atmosphere after film formation. A total of about 40 minutes was required for about 10 minutes. As a result, productivity was significantly deteriorated.

  A case where the film formation object is a tuning fork type crystal resonator will be described as an example. FIG. 4 is a cross-sectional view taken along the line AA ′ of FIG. 2, showing a main part of a tuning fork type crystal resonator formed using a conventional vacuum deposition apparatus. FIG. 5 is a diagram for explaining a state in which a crystal resonator is sandwiched between conventional vapor deposition masks. FIG. 6 is a diagram for explaining a state in which a crystal resonator is sandwiched between vapor deposition masks in which only a conventional rough adjustment film portion is opened.

  As shown in FIG. 4, when thickly forming the coarse adjustment film only on a part of the main surface of the coarse adjustment film portion 14, usually, as shown in FIG. In general, a vapor deposition mask 18 is prepared, and a tuning fork crystal resonator 17 as a film formation object is sandwiched between the vapor deposition mask 18 to perform film formation.

  On the other hand, with the miniaturization of the tuning fork type crystal resonator 17, the coarse adjustment film portion 14 has become a small area of about 400 × 100 μm. As shown in FIG. 6, the portion 19 does not necessarily have a square shape but has an elliptical shape due to processing limitations. For this reason, there is a case where the design intent that the coarse tuning film portion 14 of the tuning fork crystal 17 is wide and the frequency adjustment amount is large cannot be satisfied. Further, when the coarse tuning film portion 14 is intended to be as wide as possible with respect to the tuning fork branch size of the tuning fork crystal resonator 17, when the tuning fork crystal resonator 17 is sandwiched by the vapor deposition mask 18, the vapor deposition mask 18 is overlapped. It is difficult to form a film on a predetermined portion of the coarse tuning film portion 14 of the tuning fork crystal resonator 17 due to assembly variation, processing dimension variation of the vapor deposition mask 18 itself, and the like.

  Accordingly, in the case of a wafer in which the vapor deposition mask opening 19 has a slit shape and a plurality of tuning fork crystal resonators 17 are arranged, the coarse adjustment film portions 14 of the plurality of tuning fork crystal resonators 17 are formed on the vapor deposition mask 18. The film is formed on the substantially quadrangular cross section of the tip of the tuning fork branch of the tuning fork crystal resonator 17. However, in such a film forming method, the film is also formed on the side surface of the tuning fork branch of the tuning fork crystal resonator 17, and the weak film adhesion on the side surface is caused by the rough film removal by a laser or the like performed in a later step. In this case, problems such as side film peeling are caused.

  An object of the present invention is to provide a highly productive vacuum vapor deposition method and vacuum vapor deposition apparatus capable of forming a vapor deposition film having a film thickness on an arbitrary surface of an object to be deposited thicker than that on the other surface. And

  In order to achieve the above object, the vacuum vapor deposition method of the present invention uses a revolution mechanism in a vacuum chamber and a rotation mechanism that rotates a film-forming object attached to a plurality of rotation shafts incorporated in the revolution mechanism. A vacuum evaporation method, wherein the rotation shaft has a structure in which two rotation gears, a first rotation gear and a second rotation gear, are attached in series, and the first rotation gear has an arbitrary point on a revolution track. The film is formed on a plurality of surfaces of the film by a first rotation mechanism that can rotate at an angle corresponding to the inter-tooth angle, and the second rotation gear having a gear shape excluding one tooth of the first rotation gear is revolved. The film is formed on the film by a second rotation mechanism capable of rotating at an angle corresponding to the inter-tooth angle of the second rotation gear, and the second rotation is performed by rotation of the rotation axis by the second rotation mechanism. At a position excluding one gear tooth, it is attached to the rotating shaft. Any surface of the deposition target object is by holding at a predetermined angle with respect to the evaporation source, characterized by thick film formation only on any surface of the deposition target was.

  Furthermore, the vacuum deposition method of the present invention is based on a combination of the second rotation mechanism and the second rotation gear by revolving the rotation shaft (n2) times when the number of teeth of the second rotation gear is n2. After performing the rotation operation of the film-forming object (n2) times, when the number of teeth of the first rotation gear is n1, the first rotation mechanism revolves the rotation axis (n1-1) times. And the first rotation gear in combination with the first rotation gear (n1-1), and then the film formation by the combination of the second rotation mechanism and the second rotation gear. This rotation operation can be performed (n2) times, and the angle of the film-forming object attached to the rotation shaft with respect to the evaporation source can be aligned to a predetermined angle.

  In order to achieve the above object, a vacuum vapor deposition apparatus according to the present invention includes a revolving mechanism in a vacuum chamber and a rotation mechanism that rotates a film-forming object attached to a plurality of rotation shafts incorporated in the revolving mechanism. In the vapor deposition apparatus, the rotation shaft has a structure in which two sets of rotation gears, a first rotation gear and a second rotation gear, are attached in series, and at an arbitrary point on the revolution track, the angle between the teeth of the first rotation gear is set. A first rotation mechanism that rotates at a corresponding angle to form a film on a plurality of surfaces of the film to be formed, and the second rotation gear having a gear shape excluding one tooth of the first rotation gear is rotated during the revolution. A second rotation mechanism that rotates the film at an angle corresponding to a gear tooth angle, and forms a film on the film to be formed, and the second rotation gear rotates one of the second rotation gears by rotation of the rotation shaft by the second rotation mechanism. In the removed position, the film deposition object attached to the rotation shaft Any plane by holding at a predetermined angle with respect to the evaporation source, characterized by thick film formation only on any surface of the deposition target object.

  Furthermore, the vacuum evaporation apparatus of the present invention is based on a combination of the second rotation mechanism and the second rotation gear by revolving the rotation shaft (n2) times when the number of teeth of the second rotation gear is n2. After performing the rotation operation of the film-forming object (n2) times, when the number of teeth of the first rotation gear is n1, the first rotation mechanism revolves the rotation axis (n1-1) times. And the first rotation gear in combination with the first rotation gear (n1-1), and then the film formation by the combination of the second rotation mechanism and the second rotation gear. An alignment mechanism that aligns the angle of the film-mounted object attached to the rotation axis with respect to the evaporation source to a predetermined angle by performing the rotation operation of (n2) times.

  According to the present invention, in film deposition on a plurality of surfaces having a substantially quadrilateral cross section in vacuum vapor deposition, when it is desired to increase the film thickness of an arbitrary surface relative to the other surface, the vacuum chamber is opened to the atmosphere, depending on the operator. It is possible to align the film formation object at a preset angle in a vacuum environment without performing complicated operations such as angle alignment of the film formation object attached to the rotation mechanism in the vacuum chamber and evacuation again. A vacuum deposition method and a vacuum deposition apparatus can be provided, and productivity can be improved.

  Furthermore, in order to eliminate the rotation error caused by the second rotation mechanism 13, the number of revolutions of the first rotation mechanism 12 and the second rotation mechanism 13 or the number of rotations of the film to be formed can be reliably set. A vacuum deposition method and a vacuum deposition apparatus capable of aligning objects at a preset angle can improve productivity.

  The rotation speed is set as follows. When the number of teeth of the first rotation gear of the first rotation mechanism 9 is n1, and the number of teeth of the second rotation gear 10 of the second rotation mechanism 13 is n2, the revolution by the revolution mechanism 13 is rotated n2 times, After the rotation operation by the rotation mechanism 13 is performed n2 times, when the second rotation mechanism is retracted and the first rotation mechanism is inserted, the rotation by the rotation mechanism 13 is (n1-1) rotation, and the first rotation mechanism The rotation operation is performed (n1-1). Thereafter, the first rotation mechanism is retracted, the second rotation mechanism is inserted again, the revolution by the second rotation mechanism is performed n2 times, that is, the rotation operation by the second rotation mechanism is performed n2 times. It can be aligned at a predetermined position.

  According to the present invention, it is possible to provide a highly productive vacuum vapor deposition method and vacuum vapor deposition apparatus capable of forming a vapor deposition film having a film thickness on an arbitrary surface of an object to be deposited, which is thicker than that on the other surface.

  A specific embodiment of the present invention will be described with reference to the drawings, taking as an example film formation on a wafer on which several other tuning fork crystal units are arranged. FIG. 1 is a schematic configuration diagram of a vacuum vapor deposition apparatus in the present embodiment. FIG. 3 is a cross-sectional view taken along the line AA ′ of FIG. 2, which is a main part of a tuning fork type crystal resonator formed using the vacuum vapor deposition apparatus in the present embodiment. FIG. 7 is an assembly diagram of the vapor deposition jig and the rotation gear in the present embodiment. FIG. 8 is a schematic diagram of rotation of the vapor deposition jig in this example. In each drawing, for the sake of clarity of explanation, a part of the structure is not shown, and some dimensions are exaggerated.

  As shown in FIG. 7, a rotating shaft 5 for attaching a vapor deposition jig 4 to which a wafer on which a large number of tuning fork type crystal resonators, which are film deposition objects, are arranged, is mounted on a tuning fork crystal resonator having a substantially quadrilateral cross section. The first rotation gear 6 having n1 = 4 teeth that rotate 90 ° in order to form the four sides of the branch cross section of the film and the second rotation gear 10 having n2 = 3 teeth are attached in series. .

  The vacuum vapor deposition apparatus in the present embodiment is different from the conventional vacuum vapor deposition apparatus (see FIG. 9) in that a first rotation gear for rotating the vapor deposition jig 4 to which the film-forming object is attached and a first rotation mechanism 9 for operating the first rotation gear. The second rotation gear 10 and the second rotation mechanism 13 for operating the second rotation gear 10 are characteristic. A first rotation gear 6 and a second rotation gear 10 are attached to the rotation shaft 5, and a first rotation mechanism 9 includes a first rotation cam 7 and a first rotation cylinder 8 for inserting / retracting the first rotation cam 7. And the second rotation mechanism 13 has a second rotation cam 11 and a second rotation cylinder 12 for inserting / retracting the second rotation cam 11, and the second rotation gear 13. It is attached to the position where only 10 is operated.

  The vapor deposition jig 4 is attached to a rotation shaft 5 as shown in FIG. 7, and the first rotation gear 6 and the second rotation gear 10 are attached to the rotation shaft 5. The vapor deposition jig 4 attached to the vacuum vapor deposition apparatus performs the rotation operation shown in FIG.

  In the combination of the first rotation mechanism 9 and the first rotation gear 6, the B surface and the C surface of the vapor deposition jig 4 are exposed to the evaporation source 2 in the state of FIG. Is a shaded portion of the evaporation source 2. Therefore, no film is formed on the A and D surfaces in this state. In this state, the vapor deposition jig 4 performs one revolution. After the end of one revolution, the first rotation gear 6 operates in the first rotation cam 7, and the vapor deposition jig 4 shifts to the state shown in FIG. In this state, the A surface and the B surface are exposed to the evaporation source 2, and the C surface and the D surface become shadows, so that film formation is performed only on the A surface and the B surface. In this way, the deposition jig 4 repeats the states of (a) to (d) of FIG. 8 every revolution, and film formation can be performed on all surfaces of the deposition jig 4.

  The second rotation mechanism 13 operates at the time when deposition of an arbitrary film thickness is completed on the four surfaces of the vapor deposition jig 4. The first rotation cam 7 is retracted by the first rotation cylinder 8, and the second rotation cam 11 is inserted by the second rotation cylinder 12. The second rotation gear 10 is disposed at a position rotated by 45 ° from the first rotation gear 6 as viewed from the axial direction of the rotation shaft 5 (see FIG. 7). For example, FIG. 8B is the same state as FIG. 8E, and when the vapor deposition jig 4 revolves once, the second rotation gear 10 is operated by the second rotation cam 11, and the vapor deposition jig 4 is shown in FIG. 8 (f), the surface of the vapor deposition jig 4 facing the evaporation source 2 can be aligned with the surface of the combination of the second rotation mechanism 13 and the second rotation gear 10. Thereafter, the vapor deposition jig 4 performs n2 = 3 rotations by the second rotation cam 11 and the second rotation gear 10 until FIG. 8H, and since the second rotation gear 10 does not have one tooth after FIG. 8H. The second rotating cam 11 runs idle, and the C surface of the vapor deposition jig 4 faces the evaporation source 2. Thereafter, film formation can be performed only on the C surface facing the evaporation source 2.

  However, if a rotation error occurs in FIGS. 8A to 8D in this mechanism, the state shown in FIG. 8I may not be applied to the alignment operation in FIGS. 8E to 8H. . When such a rotation error occurs, the second rotation cam 11 cannot naturally operate the second rotation gear 10. Therefore, by retracting the second rotation cam 11 once and inserting the first rotation cam 7 again, the vapor deposition jig 4 starts rotation by the first rotation cam 7 and the first rotation gear 6 again. By this operation, the vapor deposition jig 4 again enters the reversing operation shown in FIGS. Here, the operation by the first rotation mechanism 9 is performed until FIG. 8C, that is, (n1-1) = 3 revolutions, and the vapor deposition jig 4 is placed at a position where the second rotation gear 10 and the second rotation cam 11 operate. Align again. Thereafter, the first rotation cam 7 is retracted, the second rotation cam 11 is inserted, and the operation from FIG. 8 (e) is performed, so that the rotation of the vapor deposition jig 4 does not occur as shown in FIG. 8 (i). It becomes possible to make the C surface face the evaporation source 2.

If the above operations are summarized, the rotation speed is set as follows. When the number of teeth of the first rotation gear of the first rotation mechanism 9 is n1, and the number of teeth of the second rotation gear 10 of the second rotation mechanism 13 is n2, the revolution by the revolution mechanism 13 is rotated n2 times, After performing the rotation operation by the rotation mechanism 13 n2 times, when the second rotation mechanism is retracted and the first rotation mechanism is inserted, the rotation by the rotation mechanism 13 is (n1-1) rotation, and the first rotation mechanism The rotation operation is performed (n1-1). Thereafter, the first rotation mechanism is retracted, the second rotation mechanism is inserted again, the revolution by the second rotation mechanism is performed n2 times, that is, the rotation operation by the second rotation mechanism is performed n2 times. It can be aligned at a predetermined position.

  With the above mechanism, the vacuum vapor deposition apparatus of the present embodiment can reliably align the vapor deposition jig 4 in the direction determined in advance by design without opening the vacuum chamber 1 to the atmosphere.

  By forming a film on a tuning fork type crystal resonator using the vacuum vapor deposition apparatus of the present embodiment, the productivity is improved and a thick film is formed only on a part of the main surface of the coarse film forming part as shown in FIG. It becomes possible to form a film.

  Although the vacuum evaporation apparatus according to the present invention has been described by taking the rough-tuning film part film formation of the crystal resonator as an example, the intended application is not limited to the crystal resonator, and further according to the gist of the present invention. Various changes and improvements can be made in the range.

Schematic configuration diagram of a vacuum deposition apparatus in the present embodiment Schematic diagram of crystal unit 2 is a cross-sectional view taken along the line AA ′ of FIG. 2, showing a main part of a tuning fork type crystal resonator formed by using the vacuum vapor deposition apparatus in the present embodiment. 2 is a cross-sectional view taken along the line AA 'in FIG. Phase diagram with a quartz crystal sandwiched between conventional vapor deposition masks State diagram in which a quartz crystal unit is sandwiched by an aperture evaporation mask only in the conventional rough-tuning film part Assembly drawing of vapor deposition jig and rotation gear in this example Rotation schematic diagram of vapor deposition jig in this example Conventional vacuum evaporation system

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Evaporation source 3 Revolution mechanism 4 Evaporation jig 5 Rotation shaft 6 First rotation gear 7 First rotation cam 8 First rotation cylinder 9 First rotation mechanism 10 Second rotation gear 11 Second rotation cam 12 Second rotation Cylinder 13 Second rotation mechanism 14 Coarse adjustment film portion 15 Fine adjustment film portion 16 Electrode film 17 Tuning fork type crystal resonator 18 Deposition mask 19 Deposition mask opening 101 Vacuum chamber 102 Evaporation source 103 Revolution mechanism 104 Deposition jig 105 Rotation shaft 106 Rotation Gear 107 Rotating cam 108 Rotating cylinder 109 Rotating mechanism

Claims (4)

In a vacuum deposition method using a revolution mechanism in a vacuum chamber and a rotation mechanism that rotates a film-forming object attached to a plurality of rotation shafts incorporated in the revolution mechanism,
The rotation shaft has a structure in which two sets of rotation gears, a first rotation gear and a second rotation gear, are attached in series.
A film is formed on a plurality of surfaces of the film by a first rotation mechanism capable of rotating at an angle according to the inter-tooth angle of the first rotation gear at an arbitrary point on the revolution track,
Further, the film formation is performed by a second rotation mechanism capable of rotating the second rotation gear having a gear shape excluding one tooth of the first rotation gear at an angle corresponding to an inter-tooth angle of the second rotation gear during revolution. Film on the object,
Furthermore, an arbitrary surface of the film-attached object attached to the rotation shaft is predetermined with respect to the evaporation source at a position excluding one tooth of the second rotation gear due to rotation of the rotation shaft by the second rotation mechanism. By maintaining the angle, a thick film is formed only on an arbitrary surface of the film formation object. When the number of teeth of the second rotation gear is n2, the rotation operation of the film deposition by the combination of the second rotation mechanism and the second rotation gear is performed by revolving the rotation shaft (n2) times ( n2) After performing
When the number of teeth of the first rotation gear is n1, the film is rotated by a combination of the first rotation mechanism and the first rotation gear by revolving the rotation axis (n1-1) times. After performing the operation (n1-1) times,
Further, the film-forming object is rotated (n2) times by a combination of the second rotation mechanism and the second rotation gear, and the angle of the film-attached object attached to the rotation shaft with respect to the evaporation source is predetermined. The vacuum deposition method according to claim 1, wherein the vacuum deposition method is aligned at an angle of In a vacuum vapor deposition apparatus having a revolution mechanism in a vacuum chamber and a rotation mechanism that rotates a film-forming object attached to a plurality of rotation shafts incorporated in the revolution mechanism,
The rotation shaft has a structure in which two sets of rotation gears, a first rotation gear and a second rotation gear, are attached in series.
A first rotation mechanism that rotates at an arbitrary point on the revolution track at an angle corresponding to the inter-tooth angle of the first rotation gear, and forms a film on a plurality of surfaces of the film formation;
The second rotation gear having a gear shape excluding one tooth of the first rotation gear is rotated at an angle corresponding to the inter-tooth angle of the second rotation gear during revolution, and the film is formed on the film to be deposited. With a rotation mechanism,
At a position excluding one tooth of the second rotation gear due to the rotation of the rotation shaft by the second rotation mechanism, an arbitrary surface of the film-attached object attached to the rotation shaft is predetermined with respect to the evaporation source. A vacuum deposition apparatus characterized in that a film is formed thickly only on an arbitrary surface of the deposition object by maintaining an angle. When the number of teeth of the second rotation gear is n2, the rotation operation of the film formation by the combination of the second rotation mechanism and the second rotation gear is performed by revolving the rotation shaft (n2) times. After (n2) times,
When the number of teeth of the first rotation gear is n1, the film is rotated by a combination of the first rotation mechanism and the first rotation gear by revolving the rotation axis (n1-1) times. After performing the operation (n1-1) times,
Further, the film-forming object is rotated (n2) times by a combination of the second rotation mechanism and the second rotation gear, and the angle of the film-attached object attached to the rotation shaft with respect to the evaporation source is predetermined. The vacuum deposition apparatus according to claim 3, further comprising an alignment mechanism that aligns at a predetermined angle.

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