WO2015072046A1 - Sputtering apparatus - Google Patents

Sputtering apparatus Download PDF

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Publication number
WO2015072046A1
WO2015072046A1 PCT/JP2014/003392 JP2014003392W WO2015072046A1 WO 2015072046 A1 WO2015072046 A1 WO 2015072046A1 JP 2014003392 W JP2014003392 W JP 2014003392W WO 2015072046 A1 WO2015072046 A1 WO 2015072046A1
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WO
WIPO (PCT)
Prior art keywords
magnet
sputtering apparatus
rotary target
plurality
rotary
Prior art date
Application number
PCT/JP2014/003392
Other languages
French (fr)
Japanese (ja)
Inventor
今中 誠二
孝啓 川島
英治 武田
Original Assignee
株式会社Joled
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2013-235840 priority Critical
Priority to JP2013235840 priority
Application filed by 株式会社Joled filed Critical 株式会社Joled
Publication of WO2015072046A1 publication Critical patent/WO2015072046A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/342Hollow targets
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets

Abstract

A sputtering apparatus (1) is provided with: a plurality of rotary targets (14a, 14b), which have a cylindrical shape, and which are disposed parallel to each other; and a plurality of magnets (16a, 16b), which are disposed inside of the cylindrically shaped rotary targets (14a, 14b), respectively. Each of the magnets (16a, 16b) rotates independently from each of the rotary targets (14a, 14b) in which each of the magnets (16a, 16b) is disposed.

Description

Sputtering equipment

The present disclosure relates to a sputtering apparatus for forming a thin film on a substrate.

Patent Document 1 discloses a sputtering apparatus using a sputtering target that discharges while rotating a cylindrical target around a cylindrical axis.

This sputtering apparatus includes a rotary target formed in a cylindrical shape in a chamber. Inside the cylindrical shape of the rotary target, a long magnet is provided in the longitudinal direction of the rotary target. This sputtering apparatus forms a thin film on a substrate disposed opposite to a rotary target by introducing gas into the chamber and discharging the rotary target while rotating.

This configuration has an advantage that the use efficiency of the target is high because the cylindrical target is uniformly eroded (eroded).

JP-A-5-263225

On the other hand, in the sputtering apparatus described in Patent Document 1, the target surface may be oxidized by water or residual gas in the chamber, or an altered layer may be formed on the target surface. Therefore, when the film quality of the thin film formed on the substrate is evaluated by, for example, the microwave detection type photoconductive decay method, the in-plane uniformity of the film quality may be adversely affected.

In view of the above problems, an object of the present disclosure is to provide a sputtering apparatus that improves the in-plane uniformity of the film quality of a thin film to be formed.

A sputtering apparatus according to one embodiment of the present disclosure is a sputtering apparatus that forms a film on a substrate, and has a plurality of rotary targets having a cylindrical shape and arranged in parallel to each other, and each cylinder of the plurality of rotary targets. And a plurality of magnets arranged inside the shape of the mold, each of the plurality of magnets rotating independently of the rotary target on which the plurality of magnets are arranged.

According to the present disclosure, it is possible to provide a sputtering apparatus that improves the in-plane uniformity of the film quality of a thin film to be formed.

FIG. 1 is a schematic configuration diagram of a sputtering apparatus according to the first embodiment. FIG. 2 is a schematic configuration diagram of the rotary target shown in FIG. FIG. 3 is a schematic diagram illustrating the operation of the rotary target and the magnet of the sputtering apparatus according to the first embodiment. FIG. 4 is a schematic view showing the operation of the rotary target and the magnet in the film forming process according to the prior art. FIG. 5 is a schematic diagram for explaining the operation of the rotary target and the magnet in the film forming process according to the first and second embodiments. FIG. 6 is a schematic diagram for explaining the operation of the rotary target and the magnet in the film forming process according to the first and second embodiments. FIG. 7 is a flowchart showing a film forming process by the sputtering apparatus according to the first embodiment. FIG. 8A is a timing chart showing a film forming process by the sputtering apparatus according to Embodiment 1, and shows a relationship between time and a magnet angle. FIG. 8B is a timing chart showing a film forming process by the sputtering apparatus according to Embodiment 1, and shows a relationship between time and the rotation direction of the rotary target (cathode). FIG. 8C is a timing chart showing a film forming process by the sputtering apparatus according to Embodiment 1, and shows a relationship between time and ON / OFF of the DC power source.

Hereinafter, embodiments will be described in detail with reference to the drawings as appropriate. However, more detailed description than necessary may be omitted. For example, detailed descriptions of already well-known matters and repeated descriptions for substantially the same configuration may be omitted. This is to avoid the following description from becoming unnecessarily redundant and to facilitate understanding by those skilled in the art.

In addition, the inventors provide the accompanying drawings and the following description in order for those skilled in the art to fully understand the present disclosure, and are intended to limit the subject matter described in the claims. is not.

(Embodiment 1)
Hereinafter, the sputtering apparatus 1 according to the embodiment of the present disclosure will be described with reference to FIGS. 1 to 8C.

[Configuration of sputtering apparatus]
1A and 1B are schematic views showing the configuration of the sputtering apparatus 1, wherein FIG. 1A is a bottom view and FIG. 1B is a front view.

As shown in FIG. 1, the sputtering apparatus 1 includes a substrate 12 for forming a thin film and a plurality of rotary targets 14 disposed so as to face the substrate 12 in a chamber 10.

The sputtering apparatus 1 deposits atoms ejected from the rotary target 14 on a substrate 12 made of glass, for example, by causing Ar ions generated by plasma to collide with the rotary target 14. Thereby, a thin film can be formed on the substrate 12.

FIG. 2 is a schematic configuration diagram of the rotary target 14 shown in FIG.

As shown in FIG. 2, the rotary target 14 is made of, for example, a compound semiconductor such as In or oxygen, and has a cylindrical shape with a diameter of about 160 mm and a length of about 2.7 m. For example, twelve rotary targets 14 are arranged. The twelve rotary targets 14 are arranged in parallel to each other. Further, each rotary target 14 is arranged so that the outer side of the cylindrical shape faces the substrate 12. The rotary target 14 functions as a cathode in the sputtering apparatus 1.

Moreover, each of the rotary targets 14 includes a magnet 16 inside a cylindrical shape.

The magnet 16 is disposed along the longitudinal direction of the rotary target 14 inside the cylindrical shape of the rotary target 14. The magnet 16 is provided in the sputtering apparatus 1 to adjust the generation position of plasma on the target.

Specifically, in the sputtering apparatus 1, since there are many Ar ions in the vicinity of the magnet 16, the rotary target 14 near the position where the magnet 16 is disposed is the rotary target 14 at the position where the magnet 16 is not disposed. Compared with, the amount of sputtering can be increased.

In FIG. 1, the magnet 16 is indicated by an arrow. For example, the tip side of the arrow is an N pole and the root side is an S pole.

Further, a backing tube (not shown) is disposed between the rotary target 14 and the magnet 16. The rotary target 14 and the magnet 16 are each provided with a gear (not shown) so as to rotate around the cylindrical axis of the rotary target 14. Thereby, the rotary target 14 and the magnet 16 can rotate separately. In other words, the plurality of magnets 16 operate independently from the rotary targets 14 arranged respectively.

Further, although not shown, the sputtering apparatus 1 includes an exhaust device such as a dry pump and a turbo pump for exhausting the inside of the chamber 10 to a vacuum state, and a supply device for supplying a process gas in the chamber 10. And a DC power source for generating plasma.

[Operation of sputtering system]
Here, the operation of the sputtering apparatus 1 will be described with reference to FIGS. 3 to 8C.

FIG. 3 is a schematic view showing the operation of the rotary target 14 and the magnet 16 of the sputtering apparatus 1.

As shown in FIG. 3, the magnet 16 rotates around the cylindrical axis of the rotary target 14. The magnet 16 rotates by a predetermined angle in the CW (clockwise) direction, and rotates by a predetermined angle in the CCW (counterclockwise) direction after a predetermined period.

At this time, the rotary target 14 rotates around the axis of the rotary target 14 at a rotation speed determined in the CW direction.

In the sputtering apparatus 1, the 12 rotary targets 14 and the magnet 16 perform the following operations.

FIG. 4 is a schematic diagram showing the operation of the rotary target 14 and the magnet 16 in the sputtering apparatus 1 according to the prior art for comparison with the present embodiment. 5 and 6 are schematic diagrams for explaining the operation of the rotary target 14 and the magnet 16 in the sputtering apparatus 1 according to the present embodiment. 4 to 6, the number of rotary targets 14 and magnets 16 is omitted to be eight.

In the rotary target 14 and the magnet 16 in the conventional sputtering apparatus, as shown in FIG. 4, the rotary target 14 and the magnet 16 rotate in the same direction, and the adjacent rotary target 14 rotates in the same direction. It swings at a predetermined angle. In the case of such a configuration, there arises a problem that the film thickness of the thin film formed on the substrate 12 is uneven.

On the other hand, in the rotary target 14 and the magnet 16 in the sputtering apparatus 1 according to the present embodiment, the rotary target 14 and the magnet 16 rotate in the same direction as shown in FIG. 16 rotates in the opposite direction. In addition, after a predetermined period of time has elapsed in the state shown in FIG. 5, as shown in FIG. 6, the adjacent rotary target 14 and magnet 16 rotate in the direction opposite to the rotation direction shown in FIG.

For example, as shown in FIG. 5, the rotary target 14a and the magnet 16a rotate in the CW direction. At this time, the rotary target 14b and the magnet 16b rotate in the CCW direction opposite to the rotary target 14a and the magnet 16a.

After the predetermined period has elapsed, as shown in FIG. 6, the rotary target 14a and the magnet 16a rotate in the CCW direction. At this time, the rotary target 14b and the magnet 16b rotate in the CW direction opposite to the rotary target 14a and the magnet 16a.

By such an operation, the film thickness of the thin film formed on the substrate 12 can be made uniform.

Next, a film forming process using the sputtering apparatus 1 will be described.

FIG. 7 is a flowchart showing a film forming process by the sputtering apparatus 1. The position where the magnets 16a and 16b are closest to the substrate is defined as a rotation angle of 0 ° of the magnets 16a and 16b. In addition, rotation in the CW direction is defined as + direction rotation, and rotation in the CCW direction is defined as −direction rotation.

As a pre-stage of the film forming process, first, a substrate 12 on which a thin film is to be formed is disposed at a predetermined position in the chamber 10. Thereafter, the chamber 10 is evacuated by a pump such as a cryopump and a turbo pump. The pressure in the chamber 10 is, for example, not more than a predetermined pressure of 0.01 Pa or less. After the chamber 10 is evacuated until the inside of the chamber 10 reaches the above-described degree of vacuum, argon (Ar) gas or the like is supplied into the chamber 10.

Thereafter, a DC power source (not shown) is turned on, and plasma is generated in the chamber 10. That is, plasma discharge is started.

When plasma discharge is started in the chamber 10, sputtering of the rotary targets 14a and 14b is started. Adjustment may be performed so that only the rotary target 14a or only the rotary target 14b becomes a target by adjusting the power density of the rotary targets 14a and 14b of the DC power source.

Then, as shown in FIG. 7, the magnet 16a is rotationally moved in the CW direction from the position where the rotation angle is 0 ° by the gear provided on the magnet 16a (step S10).

When the magnet 16a is rotated by a predetermined angle, the rotation of the magnet 16a is stopped (step S11). For example, as shown in FIG. 8A, the magnet 16a is rotationally moved to a position of 40 ° in the CW direction, that is, a position of + 40 ° with respect to a position of a rotation angle of 0 °.

At this time, the magnet 16b adjacent to the magnet 16a is rotationally moved in the CCW direction which is the opposite direction to the magnet 16a. For example, as shown in FIG. 8A, when the magnet 16a is rotated to the position of + 40 ° with respect to the position of the rotation angle 0 ° as described above, the magnet 16b is moved relative to the position of the rotation angle 0 °. It is rotated to the position of -40 °.

Thereafter, DC power is applied to the rotary targets 14a and 14b, and a thin film is formed on the substrate 12 (step S12).

Furthermore, the magnet 16a is rotationally moved in the CCW direction while applying DC power (step S13). At this time, the rotary target 14a is rotationally moved in the same CCW direction as the magnet 16a. That is, the rotary target 14a is rotated in the forward direction with respect to the swinging direction of the magnet 16a.

When the magnet 16a is rotated by a predetermined angle, the rotation of the magnet 16a and the rotary target 14a is stopped (step S14). For example, the magnet 16a is rotationally moved to a position of −40 ° with respect to a position of 80 ° in the CCW direction, that is, a rotation angle of 0 °. At this time, the magnet 16a and the rotary target 14b adjacent to the magnet 16a and the rotary target 14a are rotationally moved in the CW direction, which is the opposite direction to the magnet 16a and the rotary target 14a. For example, as described above, when the magnet 16a is rotationally moved to the position of −40 ° with respect to the position of the rotation angle 0 °, the magnet 16b is rotated to the position of + 40 ° with respect to the position of the rotation angle 0 °. Moved.

Thereafter, application of power to the rotary targets 14a and 14b is stopped (step S15).

Next, while applying electric power to the rotary targets 14a and 14b again (step S16), the magnet 16a is rotationally moved in the CW direction to a position of 40 ° with respect to a rotation angle of 0 ° (step S17). At that time, the rotary target 14a is rotated in the same CW direction as the magnet 16a. When the magnet 16a is moved by a predetermined rotation, the rotation of the magnet 16a and the rotary target 14a is stopped (step S18).

Thereafter, application of DC power to the rotary targets 14 a and 14 b is stopped, and a thin film is formed on the substrate 12.

Furthermore, when the application of DC power is stopped (step S19) and the film thickness of the thin film formed on the substrate 12 has reached a predetermined film thickness (Yes in step S20), the film forming process is terminated. . If the thickness of the thin film formed on the substrate 12 does not reach the predetermined thickness, the magnet 16a and the rotary target 14a are rotated again in the CW direction (step S10). Similarly, the magnet 16b and the rotary target 14b are rotated and moved again in the CCW direction. Steps S10 to S20 are repeated until the thin film formed on the substrate 12 reaches a predetermined film thickness.

The film thickness of the thin film formed on the substrate 12 is 100 nm, for example. Further, the thickness of the thin film is not limited to this, and may be several tens of nm.

FIG. 8A to FIG. 8C are timing charts showing a film forming process by the sputtering apparatus 1. FIG. 8A is a diagram showing a relationship between time and a magnet angle. FIG. 8B is a diagram showing time and rotary target (cathode). FIG. 8C is a diagram showing the relationship between the rotation direction and FIG. 8C is a diagram showing the relationship between time and DC power ON or OFF.

In the film forming process described above, as shown in FIG. 8A, the magnet 16a and the rotary target 14a, and the magnet 16b and the rotary target 14b are rotated at a rotation angle width of 80 ° around the rotation angle of 0 °. Moved (magnet angle 80 °).

Further, the cycle of the film forming process described above is, for example, 20 seconds. That is, after the magnet 16a and the rotary target 14a (or the magnet 16b and the rotary target 14b) move in the CW direction in 0.5 sec, DC power is applied to the target for a period of 19.5 sec (see FIGS. 8B and 8C). Thereafter, after the magnet 16a and the rotary target 14a (or the magnet 16b and the rotary target 14b) move in the CCW direction in 0.5 sec, DC power is applied to the target for a period of 19.5 sec (FIG. 8B and FIG. 8). 8C).

As described above, according to the sputtering apparatus 1 according to the present embodiment, the magnets 16a and 16b are rotated and moved in the reverse direction at regular intervals, so that the rotary targets 14a and 14b are sputtered evenly and formed on the substrate 12. In-plane uniformity of the film quality of the thin film to be formed can be improved.

[Effects]
As described above, an EL display device according to one embodiment of the present disclosure is a sputtering apparatus that forms a film on a substrate, and has a plurality of rotary targets that have a cylindrical shape and are arranged in parallel to each other. And a plurality of magnets arranged inside the cylindrical shape of each of the rotary targets, each of the plurality of magnets rotating independently of the rotary target on which the plurality of magnets are arranged.

According to this configuration, since the magnet and the rotary target operate independently from each other, the rotary target is uniformly sputtered, and the in-plane uniformity of the film quality of the thin film formed on the substrate can be improved. .

Further, the plurality of magnets arranged in the plurality of adjacent rotary targets may rotate in different directions.

According to this configuration, the adjacent magnets are rotated in the reverse direction at regular intervals, so that the rotary target is sputtered without unevenness and the in-plane uniformity of the film quality of the thin film formed on the substrate Can be improved.

In addition, each of the plurality of rotary targets may rotate in the same direction as the magnets arranged on the plurality of rotary targets.

According to this configuration, the film quality of the thin film can be made more uniform by rotating the rotary target in the same direction as the magnet.

The plurality of magnets disposed on the end side of the substrate may have a smaller rotation angle than the plurality of magnets disposed on the center side of the substrate.

According to this configuration, since the rotation angle of the magnet becomes smaller as it is arranged on the end side of the substrate, the film quality of the thin film formed on the substrate can be further adjusted.

(Embodiment 2)
Next, the sputtering apparatus concerning Embodiment 2 is demonstrated.

The difference between the sputtering apparatus according to the present embodiment and the sputtering apparatus according to the first embodiment is that the rotation angles of a plurality of arranged magnets and rotary targets are individually set.

When described using the magnet 16 and the rotary target 14 shown in FIGS. 5 and 6, the rotation angle of the magnet 16 and the rotary target 14 according to the present embodiment is, for example, the magnet 16 closest to the end portion side of the substrate 12. Further, the angle is 55 ° for the rotary target 14, 70 ° for the magnet 16 and the rotary target 14 closest to the end of the substrate 12, and 80 ° for the other magnets 16 and the rotary target 14. That is, the rotation angle of the magnet and the rotary target is reduced as the end of the substrate 12 is approached.

In general, the thin film formed on the substrate 12 becomes thinner as it approaches the end side of the substrate 12, but according to the configuration described above, even a thin film formed near the end of the substrate 12 is formed thin. The film quality of the thin film formed on the substrate 12 can be made uniform.

In the configuration described above, the rotation angles of the magnet 16 and the rotary target 14 are set to 55 °, 70 °, and 80 ° from the side closest to the end side of the substrate 12, but the rotation of the magnet 16 and the rotary target 14 is performed. The angle is not limited to these and may be changed as appropriate.

(Other embodiments)
As described above, the embodiments have been described as examples of the technology disclosed in the present application. However, the technology in the present disclosure is not limited to this, and can also be applied to an embodiment in which changes, replacements, additions, omissions, and the like are appropriately performed. Moreover, it is also possible to combine each component demonstrated in the said embodiment and it can also be set as a new embodiment.

Therefore, hereinafter, other embodiments will be described together.

For example, in the sputtering apparatus according to the above-described embodiment, the film quality of the thin film formed on the substrate 12 can be made uniform.

In the configuration described above, the rotation angles of the magnet 16 and the rotary target 14 are set to 55 °, 70 °, and 80 ° from the side closest to the end side of the substrate 12, but the rotation of the magnet 16 and the rotary target 14 is performed. The angle is not limited to these and may be changed as appropriate.

In the above-described sputtering apparatus, the thickness of the thin film formed on the substrate 12 is about 100 nm. However, the thickness of the thin film is not limited to this, and may be changed as appropriate.

As described above, the embodiments have been described as examples of the technology in the present disclosure. For this purpose, the accompanying drawings and detailed description are provided.

Accordingly, among the components described in the accompanying drawings and the detailed description, not only the components essential for solving the problem, but also the components not essential for solving the problem in order to illustrate the above technique. May also be included. Therefore, it should not be immediately recognized that these non-essential components are essential as those non-essential components are described in the accompanying drawings and detailed description.

In addition, since the above-described embodiment is for illustrating the technique in the present disclosure, various modifications, replacements, additions, omissions, and the like can be performed within the scope of the claims or an equivalent scope thereof.

The present disclosure can be used for a thin film forming apparatus for forming a semiconductor element constituting an EL display device.

DESCRIPTION OF SYMBOLS 1 Sputtering apparatus 10 Chamber 12 Substrate 14, 14a, 14b Rotary target 16, 16a, 16b Magnet

Claims (4)

  1. A sputtering apparatus for forming a film on a substrate,
    A plurality of rotary targets having a cylindrical shape and arranged parallel to each other;
    A plurality of magnets arranged inside the cylindrical shape of each of the plurality of rotary targets,
    Each of the plurality of magnets is a sputtering apparatus that rotates independently of the rotary target on which the plurality of magnets are arranged.
  2. The sputtering apparatus according to claim 1, wherein the plurality of magnets arranged on the plurality of adjacent rotary targets rotate in different directions.
  3. 3. The sputtering apparatus according to claim 1, wherein each of the plurality of rotary targets rotates in the same direction as the magnets arranged on the plurality of rotary targets.
  4. The sputtering apparatus according to any one of claims 1 to 3, wherein the plurality of magnets arranged on the end side of the substrate have a smaller rotation angle than the plurality of magnets arranged on the center side of the substrate.
PCT/JP2014/003392 2013-11-14 2014-06-24 Sputtering apparatus WO2015072046A1 (en)

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Application Number Priority Date Filing Date Title
JP2013-235840 2013-11-14
JP2013235840 2013-11-14

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688229A (en) * 1991-01-29 1994-03-29 Boc Group Inc:The Electrical control of magnetic field zone rotation of sputtering target in dual cylindrical magnetron
JP2002529600A (en) * 1998-11-06 2002-09-10 シヴァク Sputtering apparatus and method for high-rate coating
JP2005350768A (en) * 2004-05-05 2005-12-22 Applied Films Gmbh & Co Kg Coater with large area assembly of rotatable magnetron
US20130032476A1 (en) * 2011-08-04 2013-02-07 Sputtering Components, Inc. Rotary cathodes for magnetron sputtering system
JP2013506756A (en) * 2009-10-02 2013-02-28 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Method and coater for coating a substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688229A (en) * 1991-01-29 1994-03-29 Boc Group Inc:The Electrical control of magnetic field zone rotation of sputtering target in dual cylindrical magnetron
JP2002529600A (en) * 1998-11-06 2002-09-10 シヴァク Sputtering apparatus and method for high-rate coating
JP2005350768A (en) * 2004-05-05 2005-12-22 Applied Films Gmbh & Co Kg Coater with large area assembly of rotatable magnetron
JP2013506756A (en) * 2009-10-02 2013-02-28 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Method and coater for coating a substrate
US20130032476A1 (en) * 2011-08-04 2013-02-07 Sputtering Components, Inc. Rotary cathodes for magnetron sputtering system

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