JP2007087641A - Flat panel display and method of assembling same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flat panel display in which a structure for preventing loosing of hermeticity of a frit glass layer caused by foaming of the frit glass layer at the time of firing the frit glass can be obtained with an easy method and at a low manufacturing cost. <P>SOLUTION: The flat panel display is equipped with a first panel P<SB>1</SB>where electron emitting regions which emit electrons are arranged in a 2-dimensional matrix shape; a second panel P<SB>2</SB>where phosphor layers and anode electrodes are formed; and a joining member 30 at least partly including the frit glass layer. On the partial areas of the first panel inside the area of the first panel located under the joining member 30 and outside the same, a first protective film width determining portion 41 and a second protective film width determining portion 42 which extend approximately in parallel with the joining member are almost continuously formed. A protective film 40 made of metal oxide is formed on the partial area of the first panel P<SB>1</SB>and the partial area of extraction electrodes 11A and 13A located between the first protective film width determining portion 41 and the second protective film width determining portion 42. An underside of the joining member 30 contacts with the protective film 40. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a flat display device and an assembling method thereof.

  As an image display device that can replace the mainstream cathode ray tube (CRT), various types of flat display devices have been studied. Examples of such a flat display device include a liquid crystal display device (LCD), an electroluminescence display device (ELD), and a plasma display device (PDP). In addition, development of a flat display device incorporating a cathode panel equipped with an electron-emitting device is also in progress. Here, cold cathode field emission devices, metal / insulating material film / metal type devices (also called MIM devices), and surface conduction type electron emission devices are known as electron emission devices. 2. Description of the Related Art A flat display device incorporating a cathode panel having a configured electron-emitting device has attracted attention from the viewpoints of high resolution, high luminance color display, and low power consumption.

  A cold cathode field emission display device (hereinafter sometimes abbreviated as a display device), which is a flat display device incorporating a cold cathode field electron emission device as an electron emission device, generally has a plurality of cold cathode field electron emission. A cathode panel provided with a device (hereinafter sometimes abbreviated as a field emission device) and an anode panel having a phosphor layer that emits light when excited by collision with electrons emitted from the field emission device are high vacuum. The cathode panel and the anode panel are joined to each other at the peripheral edge portion via a joining member. Here, the cathode panel has electron emission regions corresponding to the sub-pixels arranged in a two-dimensional matrix, and each electron emission region is provided with one or a plurality of field emission elements. Examples of field emission devices include Spindt type, flat type, edge type, and planar type.

  As an example, FIG. 37 shows a conceptual partial end view of a conventional display device having a Spindt-type field emission device, and shows a part of the cathode panel CP and a part of the anode panel AP when the cathode panel CP and the anode panel AP are disassembled. A schematic exploded perspective view is shown in FIG. Further, the arrangement state of the components constituting the electron emission region when the electron emission region is viewed from the anode panel side is schematically shown in FIG. 40A, and an enlarged schematic part near the joining member is shown. End views are shown in FIGS. 44 and 45. FIG.

  The Spindt-type field emission device constituting this display device was formed on the cathode 10 formed on the support 10, the insulating layer 12 formed on the support 10 and the cathode 11, and the insulating layer 12. A gate electrode 13 and an opening 14 provided in the gate electrode 13 and the insulating layer 12 (a first opening 14A provided in the gate electrode 13 and a second opening 14B provided in the insulating layer 12); It is composed of a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14.

  Alternatively, FIG. 38 shows a conceptual partial end view of a conventional display device having a so-called flat type field emission device having a substantially planar electron emission portion 15A. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate An opening 14 provided in the electrode 13 and the insulating layer 12 (a first opening 14A provided in the gate electrode 13 and a second opening 14B provided in the insulating layer 12) and a bottom of the opening 14 The electron emission portion 15A is formed on the cathode electrode 11 positioned. The electron emission portion 15A is composed of, for example, a large number of carbon nanotubes partially embedded in a matrix.

  In these display devices, the cathode electrode 11 has a strip shape extending in the first direction (see the X direction in FIG. 37, FIG. 38 or FIG. 39), and the gate electrode 13 has a second direction different from the first direction. It is a strip shape extending in the direction (see Y direction in FIG. 37, FIG. 38 or FIG. 39). In general, the cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projected images of both the electrodes 11 and 13 are orthogonal to each other. An overlapping region where the strip-shaped cathode electrode 11 and the strip-shaped gate electrode 13 overlap is an electron emission region EA, which corresponds to one subpixel. The electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area of the cathode panel CP.

Except for the electron emission region EA, the insulating layer 12 and the gate electrode 13 are covered with an insulating film 16 made of silicon nitride (Si ₃ N ₄ ) as necessary. In order to protect the components constituting the cathode panel CP in various manufacturing processes, it is preferable to provide the insulating film 16, but it is not essential to provide the insulating film 16. For such a structure, see, for example, US Pat. No. 6,565,400 B1. Furthermore, an insulating film opening 17 is formed in the insulating film 16, an interlayer insulating layer 18 is formed on the insulating film 16, and a focusing electrode 19 is provided on the insulating film 16 so as to surround the insulating film opening 17. ing.

  Here, the effective region refers to a central display region that performs a display function that is a practical function as a flat display device. The invalid area is an area located outside the effective area and surrounding the effective area in a frame shape. Furthermore, in this specification, “inside” refers to a direction approaching the effective area, and “outside” refers to a direction away from the effective area. The same applies to the following description.

  On the other hand, the anode panel AP has a phosphor layer 22 (specifically, a red light-emitting phosphor layer 22R, a green light-emitting phosphor layer 22G, and a blue light-emitting phosphor layer 22B) having a predetermined pattern on the substrate 20. The phosphor layer 22 is formed and covered with the anode electrode 24. A space between these phosphor layers 22 is embedded with a light absorbing layer (black matrix) 23 made of a light absorbing material such as carbon, thereby preventing display image color turbidity and optical crosstalk. . In the figure, reference numeral 21 represents a partition wall. 38 and 39, the illustration of the partition walls is omitted. 38 and 39, illustration of the interlayer insulating layer 18 and the focusing electrode 19 is omitted, and further, illustration of the insulating film 16 is omitted in FIG.

In assembling the display device, the frit glass layers 32 and 33 made of B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass are formed from the frame 31 formed on the bottom and top surfaces. A joining member 30 is prepared. Alternatively, a joining member made of a frit glass layer is prepared. Then, for example, after the bonding member 30 is disposed on the peripheral edge (ineffective region) of the anode panel AP, the anode panel AP and the cathode panel CP are aligned so that the electron emission region EA and the phosphor layer 22 face each other. And positioning. Thereafter, the frit glass layers 32 and 33 are fired (or the joining member made of the frit glass layer is fired), so that the anode panel AP and the cathode panel CP are formed at their peripheral portions (ineffective regions). It joins via the joining member 30. Next, through a through hole (not shown) provided in a portion of the support 10 corresponding to the ineffective region of the cathode panel CP, and an exhaust pipe (not shown) made of a glass tube attached to the support 10. Then, the space between the cathode panel CP and the anode panel AP (more specifically, the space surrounded by the cathode panel CP, the anode panel AP, and the joining member 30) is evacuated, so that the space has a predetermined degree of vacuum. After reaching, close the exhaust pipe. Thus, a display device can be manufactured.

  By the way, as shown in FIG. 44 which is an enlarged schematic partial end view of the vicinity of the bonding member 30 along the second direction (Y direction), the gate electrode 13 is an extension electrode 13A which is an extension portion thereof. Wiring connection with an external circuit is performed via Further, as shown in FIG. 45 which is an enlarged schematic partial end view of the vicinity of the joining member 30 along the first direction (X direction), for example, the cathode electrode 11 is an extension portion thereof. Wiring connection with an external circuit is performed via the electrode 11A. The extraction electrodes 11A and 13A are covered with an insulating film 16 that covers the insulating layer 12 and the gate electrode 13 as necessary. Here, the cathode electrode 11, the gate electrode 13, and the extraction electrodes 11A and 13A are made of, for example, chromium, niobium, aluminum, molybdenum, tungsten, or an alloy thereof. 44 and 45, illustration of components such as the phosphor layer 22 and the anode electrode 24 constituting the anode panel AP is omitted, and the electron emission portions 15 and 15A and the openings in the cathode panel CP are omitted. The portion 14, the interlayer insulating layer 18, and the focusing electrode 19 are not shown.

US Pat. No. 6,565,400 B1

When the frit glass layers 32 and 33 are baked, the frit glass layer 32 is caused by a reaction represented by the following reaction formula (1) in the configuration in which the frit glass layer 32 is in direct contact with the insulating film 16 made of Si ₃ N ₄ . Due to the nitrogen gas, the frit glass layer 32 is foamed, which may cause a problem that the airtightness of the space surrounded by the cathode panel CP, the anode panel AP, and the bonding member 30 cannot be maintained.

Si ₃ N ₄ + 6PbO → 3SiO ₂ + 6Pb + 2N ₂ (1)

Further, when the frit glass layer 32 is baked, even if the frit glass layer 32 is in direct contact with the insulating film 16 made of Si ₃ N ₄ , the frit glass layer 32 directly contacts the extraction electrodes 11A and 13A. Even in the contact structure, the metal constituting the extraction electrodes 11A and 13A located below the frit glass layer 32 reacts with PbO contained in the frit glass layer 32, and PbO becomes Pb, thereby releasing oxygen. As a result, the metal constituting the extraction electrodes 11A and 13A is oxidized, and the extraction electrodes 11A and 13A may be disconnected or may have high resistance.

  The same problem occurs when a joining member (joint member made of a frit glass layer) composed entirely of a frit glass layer is used.

In order to solve these problems, US Pat. No. 6,565,400 B1 discloses a technique for forming a barrier material layer made of SiO ₂ between the frit glass layer 32 and the insulating film 16 by a sputtering method or a CVD method. ing. However, in order to solve the above-described problems with the barrier material layer made of SiO ₂ , a thick barrier material layer must be formed, resulting in an increase in manufacturing cost. In addition, in order to prevent the barrier material layer from being formed in other regions, the barrier material layer is selectively formed in the region of the insulating film to be located below the frit glass layer, an etching technique or a lift-off technique is used. There is a problem that a high-accuracy mechanical mask is required.

  Accordingly, an object of the present invention is a flat display device in which a first panel and a second panel are bonded using a bonding member including at least a part of a frit glass layer, and the frit glass constituting the bonding member When firing the layers, the frit glass layer foams and the flat display device cannot maintain its airtightness, and the extraction electrode located below the joining member breaks or the resistance increases. An object of the present invention is to provide a flat panel display device that can achieve a structure that does not occur in an easy manner at a low manufacturing cost, and a method for assembling the flat panel display device.

In order to achieve the above object, a flat display device according to the first and second aspects of the present invention includes:
(A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
Is a flat display device.

The flat display device according to the first aspect of the present invention includes:
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the first panel inside the region of the first panel located below the bonding member,
A second protective film width defining portion extending substantially parallel to the joining member is formed substantially continuously in the portion of the first panel outside the region of the first panel located below the joining member,
The protective film made of a metal oxide is formed on the first panel portion and the extraction electrode portion located between the first protective film width defining portion and the second protective film width defining portion, and is formed on the bottom surface of the joining member. Is in contact with the protective film.

Moreover, the flat display device according to the second aspect of the present invention includes:
An insulating film is formed on the surface of the extraction electrode,
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the insulating film inside the region of the insulating film located below the bonding member,
A second protective film width defining portion extending substantially parallel to the bonding member is substantially continuously formed in the portion of the insulating film outside the region of the insulating film located below the bonding member,
The protective film made of a metal oxide is formed on the insulating film located between the first protective film width defining portion and the second protective film width defining portion, and the bottom surface of the bonding member is in contact with the protective film. It is characterized by being.

A method for assembling a flat display device according to the first aspect of the present invention for achieving the above object is as follows:
(A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
An assembly method of a flat panel display device comprising:
A first protective film width defining portion extending substantially in parallel with the joining member is formed substantially continuously in a portion of the first panel inside the region of the first panel that should be positioned below the joining member, and joined. A second protective film width defining portion extending substantially in parallel with the joining member is formed substantially continuously in a portion of the first panel outside the region of the first panel to be positioned below the member;
After forming a protective film on the region of the first panel located between the first protective film width defining portion and the second protective film width defining portion based on the coating method,
Assembling the first panel, the second panel, and the joining member so that the joining member is in contact with the protective film and in contact with the second panel ineffective region;
Firing the frit glass layer constituting the joining member, and thereby joining the first panel and the second panel in their ineffective regions;
It comprises the process.

In addition, an assembly method of the flat display device according to the second aspect of the present invention for achieving the above object is as follows.
(A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes having an insulating film formed on the surface are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
An assembly method of a flat panel display device comprising:
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the insulating film inside the region of the insulating film to be positioned below the bonding member, and the bonding member A second protective film width defining portion extending substantially parallel to the bonding member is substantially continuously formed in a portion of the insulating film outside the region of the insulating film to be positioned below;
After forming a protective film on the region of the insulating film located between the first protective film width defining portion and the second protective film width defining portion based on the coating method,
Assembling the first panel, the second panel, and the joining member so that the joining member is in contact with the protective film and in contact with the second panel ineffective region;
Firing the frit glass layer constituting the joining member, and thereby joining the first panel and the second panel in their ineffective regions;
It comprises the process.

  In the method for assembling the flat display device according to the first aspect or the second aspect of the present invention, as a coating method for forming the protective film, a spray coating method; a coating method using a dispenser; Examples of the coating method used include offset coating, gravure coating, and brush coating.

  The first protective film width defining portion and the second protective film width defining portion are formed to be “substantially” parallel to the bonding member, but “substantially” parallel may not be strictly parallel to the bonding member. Means that. In addition, the first protective film width defining portion and the second protective film width defining portion are formed “substantially” continuously. However, “substantially” continuous means that no substantial problem occurs. In other words, the first protective film width defining portion and / or the second protective film is not to the extent that the protective film is not formed on the first panel or the insulating film where the protective film should not be formed. This means that there may be some discontinuity in the protective film width defining portion.

  In the flat display device or the assembling method thereof according to the first aspect or the second aspect of the present invention, each of the first protective film width defining portion and the second protective film width defining portion is a protrusion. It can be set as the structure which consists of. In this case, the protrusion can be made of a photosensitive polyimide resin, a non-photosensitive polyimide resin, or a ceramic coating film. The height of the protrusion can be exemplified as 5 μm to 0.1 mm, the width of the protrusion can be exemplified as 10 μm to 2 mm, and the protrusion constituting the first protective film width defining portion Examples of the distance between the (inner protrusion) and the protrusion (outer protrusion) constituting the second protective film width defining portion include 2 mm to 10 mm. Further, as a general method for forming the protrusion, a coating method using a slit coater, a coating method using a screen plate, and a coating method using a dispenser can be exemplified. By forming the protrusions, although depending on the coating method for forming the protective film, the protective film can be surely formed only on the portion where the protective film is to be formed. When the protrusion is made of a photosensitive polyimide resin, the protrusion is formed by applying a liquid photosensitive polyimide resin to the first panel invalid area or the entire surface, and performing exposure, development, drying, and baking. Can do.

Alternatively, in the flat display device according to the first aspect or the second aspect of the present invention or the assembling method thereof, each of the first protective film width defining portion and the second protective film width defining portion is The wettability control layer can be used. In this case, the wettability control layer can be composed of a silane compound or a fluorine compound. The height of the wettability control layer can be exemplified by 0.05 μm to 1 μm, the width of the wettability control layer can be exemplified by 10 μm to 0.1 mm, and the first protective film width regulation 2 to 10 mm is exemplified as the distance between the wettability control layer (inner wettability control layer) constituting the portion and the wettability control layer (outer wettability control layer) constituting the second protective film width defining portion can do. As a general method for forming the wettability control layer, a coating method using a screen plate and an offset coating method can be exemplified. By forming the wettability control layer, although it depends on the coating method for forming the protective film, the protective film can be surely formed only on the portion where the protective film is to be formed. More specifically, as a material constituting the wettability control layer, for example, octadecyltriethoxysilane, octadecyltrichlorosilane, octadecyltrimethoxysilane, octyltrichlorosilane, octyltrimethoxysilane, octyltriethoxysilane, hexamethyldisilazane , Methylvinyltrichlorosilane, octadecyldimethylchlorosilane, dimethyldimethoxysilane, methyltrimethoxysilane, vinyltriethoxysilane, γ-glyoxydoxypropyltrimethysilane, γ-methacryloxypropyltrimethoxysilane, γ-aminopropyltriethoxy Silane, N-phenyl-γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane Silane-based compounds such as vinyl trichlorosilane, vinyl tris (β-methoxy-ethoxysilane), β- (3,4-epoxycyclohexyl) -ethyltrichlorosilane, methacrylate chromic chloride, 3-mercaptopropyltrimethoxysilane); Fluorine compounds such as perfluoroalkyl compounds in which all or part of the hydrogen atoms in the hydrocarbon group are replaced with fluorine atoms can be exemplified. Note that the contact angle between the solution as the protective film material for forming the protective film and the insulating film or the first panel (more specifically, the support constituting the first panel) is θ ₀ , and the solution is wet. When the contact angle with the property control layer is θ ₁ , θ ₀ <θ ₁ is satisfied. More specifically, for example, it is preferable to satisfy 0 degrees ≦ θ ₀ ≦ 10 degrees and 50 degrees ≦ θ ₁ ≦ 180 degrees.

In the flat display device or its assembling method according to the first aspect or the second aspect of the present invention including the various preferable modes and configurations described above, the joining member includes a frame body and a bottom surface of the frame body. In addition, the first frit glass layer and the second frit glass layer formed on the top surface may be configured, or the entire joining member may be configured by the frit glass layer. The frame can be made from an insulating rigid material such as mullite, alumina, barium titanate, lead zirconate titanate, zirconia, cordiolite, borosilicate barium, iron silicate, or glass such as soda lime glass. Examples of the shape of the frame body include a rod shape and a frame shape (frame shape). That is, a joining member can be finally obtained by appropriately arranging a plurality of rod-like frame bodies, or a joining member can be finally obtained by arranging one frame-like (frame-like) frame body. You can also. As a constituent material of the first frit glass layer, the second frit glass layer, and the frit glass layer constituting the entire joining member, B ₂ O ₃ —PbO-based frit glass and SiO ₂ —B ₂ O ₃ —PbO-based frit glass are used. Mention may be made of frit glass. The frit glass paste is applied to the bottom surface and the top surface of the frame body, and the first frit formed on the bottom surface and the top surface of the frame body is obtained by calcining at 350 ° C. for 20 minutes. A joining member comprising a glass layer and a second frit glass layer can be obtained.

Furthermore, in the flat display device according to the first aspect or the second aspect of the present invention including the various preferable modes and configurations described above or the assembling method thereof, the metal oxide constituting the protective film Is a metal oxide having electrical insulating properties, specifically, titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), magnesium oxide (MgO), chromium oxide. It is preferably made of (CrO _x ), zirconium oxide (ZrO ₂ ), niobium oxide (Nb ₂ O ₅ ), tin oxide (SnO ₂ ), or vanadium oxide (VO _x ). These metal oxides are preferable materials because they have very low reactivity with PbO which is a component of the frit glass constituting the frit glass layer. Further, as a protective film material for forming a protective film by a coating method, a solution in which fine particles of these metal oxides are dispersed [solvent: for example, isopropyl alcohol, methyl alcohol, ethyl alcohol, butyl cellosolve acetate, NMP ( N-methylpyrrolidinone)]. When using a solution in which such fine particles are dispersed, a protective film made of a metal oxide can be obtained by evaporating the solvent. Alternatively, a solution of a metal alkoxide containing a metal atom such as titanium, tantalum, aluminum, magnesium, zirconium, niobium, vanadium (for example, an aluminum alkoxide compound such as aluminum isopropoxide; tetraisopropyl titanate, tetrabutyl titanate, butyl titanate dimer) , Alkoxides of titanium such as tetrakis (2-ethylhexyloxy) titanium, tetrastearyl titanate, triethanolamine titanate, diisopropoxy bis (acetylacetonato) titanium, titanium ethylacetoacetate, titanium isopropoxyoctylene glycolate, titanium lactate _{compound; Ta (OC 2 H 5)} 5, Ta (OCH 3) 5, Ta (O-iC 3 H 7) 5, Ta (O-n Such _{3 H 7) 5, Ta (} O-iC 4 H 9) 5, Ta (O-nC 4 H 9) 5, Ta (O-secC 4 H 9) 5, Ta (O-tC 4 H 9) 5 alkoxide compounds of _{tantalum; Nb (OC 2 H 5)} 5, Nb (OCH 3) 5, Nb (O-iC 3 H 7) 5, Nb (O-nC 3 H 7) 5, Nb (O-iC 4 H _{9) 5, Nb (O-} nC 4 H 9) 5, Nb (O-secC 4 H 9) 5, Nb (O-tC 4 H 9) 5 such as an alkoxide compound of niobium) can be mentioned. When a metal alkoxide solution is used, a protective film made of a metal oxide can be obtained based on hydrolysis and dehydration condensation. If the protective film is too thin, for example, the reaction between the insulating film and the frit glass layer during firing of the frit glass layer cannot be suppressed. On the other hand, if the protective film is too thick, the protective film is removed from the first panel or the insulating film. There is a risk of peeling. The average thickness of the protective film is not limited, but is 0.2 μm to 0.8 μm, preferably 0.4 μm to 0.6 μm.

  Furthermore, in the flat display device or its assembling method according to the second aspect of the present invention including the various preferable modes and configurations described above, silicon nitride is exemplified as a material constituting the insulating film. can do. As a method for forming the insulating film, a sputtering method or a chemical vapor deposition method (CVD method) can be exemplified.

In addition, the flat display device according to the first aspect or the second aspect of the present invention including the various preferable modes and configurations described above or the assembling method thereof (collectively, these are simply referred to as the present invention. In some cases, a glass substrate, a glass substrate with a base insulating film formed on the surface, a quartz substrate, and a base insulating film formed on the surface are used as the support and substrate constituting the first panel and the second panel. A quartz substrate and a semiconductor substrate having a base insulating film formed on the surface can be given. From the viewpoint of reducing manufacturing costs, it is preferable to use a glass substrate or a glass substrate having a base insulating film formed on the surface. . As a glass substrate, high strain point glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂ ), lead glass (Na ₂ O · PbO · SiO ₂ ) and alkali-free glass can be exemplified.

  Examples of the flat display device according to the present invention include a cold cathode field emission display device provided with a cold cathode field emission device, and a flat surface in which a metal / insulating material film / metal type element (MIM element) is incorporated. And a flat display device in which a surface conduction electron-emitting device is incorporated.

Here, when the flat display device is a cold cathode field emission display device, the electron emission region for emitting electrons is composed of one or a plurality of cold cathode field emission devices,
Each cold cathode field emission device is
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping portion where the cathode electrode and the gate electrode overlap, and the cathode electrode exposed at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consisting of
The extension part of the cathode electrode and the extension part of the gate electrode can be configured to correspond to the extraction electrode. In the flat display device or the assembly method thereof according to the second aspect of the present invention, it is preferable that the insulating layer and the gate electrode are covered with the insulating film except for the electron emission region. That is, the insulating film is provided with an insulating film opening, and the projected image of the electron emission region is preferably included in the projected image of the insulating film opening. This insulating film corresponds to an extending portion of the insulating film formed on the plurality of extraction electrodes.

  When the flat display device is a cold cathode field emission display device, a cold cathode field emission device (hereinafter, abbreviated as a field emission device) constituting an electron emission region is a first panel or a second panel ( On the other hand, the anode electrode and the phosphor layer are provided on the second panel or the first panel (sometimes referred to as an anode panel).

  The type of the field emission device is not particularly limited, and a Spindt-type field emission device (a field emission device in which a conical electron emission portion is provided on the cathode electrode positioned at the bottom of the opening) or a flat type field emission device An element (a field emission element in which a substantially planar electron emission portion is provided on a cathode electrode positioned at the bottom of an opening) can be given.

  In the cathode panel, the projection image of the cathode electrode and the projection image of the gate electrode are orthogonal to each other, that is, the first direction and the second direction are orthogonal to each other in the structure of the cold cathode field emission display device. It is preferable from the viewpoint of simplification. The overlapping region where the cathode electrode and the gate electrode overlap corresponds to the electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel (for example, the first panel effective region), Each electron emission region is provided with one or a plurality of field emission elements.

  In the cold cathode field emission display, a strong electric field generated by a voltage applied to the cathode electrode and the gate electrode is applied to the electron emission portion, and as a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor layer. As a result of the collision of electrons with the phosphor layer, the phosphor layer emits light and can be recognized as an image.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit via an extraction electrode corresponding to the extension portion of the cathode electrode, and the gate electrode is an extraction electrode corresponding to the extension portion of the gate electrode The anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During actual operation, the output voltage V _A of the anode electrode control circuit is normally constant, and can be, for example, 5 kilovolts to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less. In actual operation of the cold cathode field emission display, the voltage modulation method can be adopted as the gradation control method for the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode.

A field emission device can be generally manufactured by the following method. Note that the order of step (4) and step (5) may be reversed. In the flat display device according to the first aspect of the present invention or the flat display device in the assembling method thereof, step (5) can be omitted.
(1) A step of forming, on the support, a cathode electrode and an extraction electrode corresponding to the extended portion of the cathode electrode,
(2) forming an insulating layer on the support and the cathode electrode;
(3) forming a gate electrode on the insulating layer, and forming an extraction electrode corresponding to the extended portion of the gate electrode on the support;
(4) forming an opening in a portion of the gate electrode and the insulating layer in a region where the cathode electrode and the gate electrode overlap, and exposing the cathode electrode at the bottom of the opening;
(5) forming an insulating film on the entire surface and forming an insulating film opening in the insulating film;
(6) A step of forming an electron emission portion on the cathode electrode located at the bottom of the opening.

Alternatively, the field emission device can be manufactured by the following method. In addition, you may reverse the order of a process (5) and a process (6). In the flat display device according to the first aspect of the present invention or the flat display device in the assembling method thereof, step (6) can be omitted.
(1) A step of forming, on the support, a cathode electrode and an extraction electrode corresponding to the extended portion of the cathode electrode,
(2) forming an electron emission portion on the cathode electrode;
(3) forming an insulating layer on the support and the electron emission portion, or on the support, the cathode electrode and the electron emission portion;
(4) forming a gate electrode on the insulating layer, and forming an extraction electrode corresponding to the extended portion of the gate electrode on the support;
(5) forming an opening in a portion of the gate electrode and the insulating layer in the overlapping region of the cathode electrode and the gate electrode, and exposing the electron emission portion at the bottom of the opening;
(6) A step of forming an insulating film on the entire surface and forming an insulating film opening in the insulating film.

  The field emission device may be provided with a focusing electrode. That is, for example, a field emission device in which an interlayer insulating layer is further provided on the insulating layer or insulating film, and a focusing electrode is provided on the interlayer insulating layer, or a focusing electrode is provided above the insulating layer or insulating film. It can also be a field emission device. Here, the focusing electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode, thereby improving the luminance and preventing optical crosstalk between adjacent pixels. It is. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. A relative negative voltage (for example, 0 volts) is applied to the focusing electrode from the focusing electrode control circuit. The focusing electrode does not necessarily have to be individually formed so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or The electron emission region may be extended along a predetermined arrangement direction, or the electron emission portion or the electron emission region may be surrounded by one focusing electrode (that is, the focusing electrode may be a cold cathode field electron). It may be a thin sheet-like structure covering the entire effective area, which is the central display area that performs a practical function as an emission display device), and is thus common to a plurality of electron emission portions or electron emission areas The convergence effect can be exerted. In some cases, the formation of the interlayer insulating layer and the formation of the inner protrusion and the outer protrusion may be performed simultaneously using the same material.

  In the Spindt-type field emission device, as the material constituting the electron emission portion, molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by, for example, a sputtering method or a CVD method in addition to the vacuum evaporation method.

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. Alternatively, the material constituting the electron emission portion may be appropriately selected from materials in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. In the flat type field emission device, carbon, more specifically, amorphous diamond or graphite, a carbon nanotube structure (carbon nanotube and / or graphite nanofiber), as a particularly preferable constituent material of the electron emission portion, Examples thereof include ZnO whiskers, MgO whiskers, SnO ₂ whiskers, MnO whiskers, Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

The constituent materials of the cathode electrode, the extraction electrode corresponding to the extension portion of the cathode electrode, the gate electrode, the extraction electrode corresponding to the extension portion of the gate electrode, and the focusing electrode are aluminum (Al), tungsten (W), niobium (Nb) ), Tantalum (Ta), molybdenum (Mo), chromium (Cr), copper (Cu), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr) ), Iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys (eg, MoW) or compounds (eg, nitrides such as TiN), WSi ₂ , MoSi ₂ , TiSi ₂ containing these metal elements. a silicide such as TaSi _2); thin carbon film such as diamond; silicon (semiconductor Si) such as ITO (indium - tin), indium oxide, conductive zinc oxide, etc. It can be exemplified metal oxides. In addition, as a method for forming these electrodes, for example, a vapor deposition method such as an electron beam vapor deposition method or a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method; a screen printing method; Plating method and electroless plating method); lift-off method; laser ablation method; sol-gel method and the like. According to the screen printing method or the plating method, it is possible to directly form, for example, a strip-like cathode electrode, gate electrode, or extraction electrode.

As a material for constituting the insulating layer and the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. For forming the insulating layer or the interlayer insulating layer, a known process such as a CVD method, various coating methods, a sputtering method, or a screen printing method can be used.

  Planar shape of the first opening (opening formed in the gate electrode) or the second opening (opening formed in the insulating layer) (shape when the opening is cut in a virtual plane parallel to the support surface) ) Can be any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, a rounded polygon. The formation of the first opening can be performed by, for example, anisotropic etching, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode, The first opening can also be formed directly. The second opening can also be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching.

  In the field emission device, depending on the structure of the field emission device, one electron emission portion may exist in one opening, or a plurality of electron emission portions may exist in one opening. In addition, a plurality of first openings are provided in the gate electrode, one second opening communicating with the first opening is provided in the insulating layer, and one or more are provided in one second opening provided in the insulating layer. There may be an electron emission portion.

In the field emission device, a resistor film may be provided between the cathode electrode and the electron emission portion. By providing the resistor film, the operation of the field emission device can be stabilized and the electron emission characteristics can be made uniform. As a material constituting the resistor film, a carbon-based material such as silicon carbide (SiC) or SiCN, a semiconductor material such as SiN or amorphous silicon, or a refractory metal oxide such as ruthenium oxide (RuO ₂ ), tantalum oxide, or tantalum nitride. It can be illustrated. Examples of the method for forming the resistor film include a sputtering method, a CVD method, and a screen printing method. The electrical resistance value per one electron emitting portion may be approximately 1 × 10 ⁶ to 1 × 10 ¹¹ Ω, preferably several tens of gigaΩ.

  In the flat display device, examples of the configuration of the anode electrode and the phosphor layer include (1) a configuration in which the anode electrode is formed on the substrate and the phosphor layer is formed on the anode electrode, and (2) on the substrate. The structure which forms a fluorescent substance layer and forms an anode electrode on a fluorescent substance layer can be mentioned. In the configuration (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. In the configuration (2), a metal back film may be formed on the anode electrode.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is preferable that the anode electrode unit and the anode electrode unit are electrically connected by a resistor layer. As the material constituting the resistor layer, carbon, carbon carbide (SiC), SiCN, and other carbon materials; SiN materials; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, and other high melting point metals Examples thereof include oxides; semiconductor materials such as amorphous silicon; ITO. It is also possible to realize a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low resistance value on the SiC resistance film. Examples of the sheet resistance value of the resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. The number (Q) of anode electrode units may be two or more. For example, when the total number of rows of phosphor layers arranged in a straight line is q, Q = q or q = k · Q (K is an integer of 2 or more, preferably 10 ≦ k ≦ 100, more preferably 20 ≦ k ≦ 50), or a number obtained by adding 1 to the number of spacers arranged at a constant interval. It can also be a number that matches the number of pixels or sub-pixels, or an integer fraction of the number of pixels or sub-pixels. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit. A resistor layer may be formed on one anode electrode as a whole.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. Examples of the method of forming the conductive material layer include various physical vapor deposition methods (PVD methods) such as an evaporation method such as an electron beam evaporation method and a hot filament evaporation method, a sputtering method, an ion plating method, and a laser ablation method; Examples include CVD method; screen printing method; metal mask printing method; lift-off method; sol-gel method. That is, it is possible to form an anode electrode by forming a conductive material layer made of a conductive material and patterning the conductive material layer based on a lithography technique and an etching technique. Alternatively, the anode electrode can be obtained by forming a conductive material based on a PVD method or a screen printing method through a mask or screen having an anode electrode pattern. The resistor layer can also be formed by a similar method. That is, a resistor layer may be formed from a resistor material, and the resistor layer may be patterned based on a lithography technique and an etching technique, or the resistor material may be provided via a mask or screen having a resistor layer pattern. The resistor layer can be obtained by formation based on the PVD method or the screen printing method. 3 × 10 ⁻⁸ m (30 nm) to 5 as the average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as described later, the average thickness of the anode electrode on the top surface of the partition) Examples include x10 ⁻⁷ m (0.5 μm), preferably 5 × 10 ⁻⁸ m (50 nm) to 3 × 10 ⁻⁷ m (0.3 μm).

As the constituent material of the anode electrode, molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti) ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ Silicide such as MoSi ₂ , TiSi ₂ , TaSi ₂ ); Semiconductor such as silicon (Si); Carbon thin film such as diamond; Conductive metal oxide such as ITO (indium oxide-tin oxide), indium oxide, zinc oxide can do. When the resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the resistance value of the resistor layer. For example, when the resistor layer is made of silicon carbide (SiC), the anode electrode is It is preferable to comprise from molybdenum (Mo).

  The phosphor layer may be composed of single-color phosphor particles or may be composed of three primary color phosphor particles. The arrangement pattern of the phosphor layers is, for example, a dot shape. Specifically, when the flat display device is a color display, examples of the arrangement and arrangement of the phosphor layers include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one line of the phosphor layers arranged in a straight line is occupied by a line occupied by the red light emitting phosphor layer, a line occupied by the green light emitting phosphor layer, and a blue light emitting phosphor layer. It may be comprised from the row | line | column, and it may be comprised from the row | line | column in which the red light emission fluorescent substance layer, the green light emission fluorescent substance layer, and the blue light emission fluorescent substance layer were arrange | positioned in order. Here, the phosphor layer is defined as a phosphor region that generates one bright spot in the flat display device. Further, one pixel (one pixel) is composed of a set of one red light emitting phosphor layer, one green light emitting phosphor layer, and one blue light emitting phosphor layer, and one subpixel is one phosphor. It is composed of layers (one red-emitting phosphor layer, one green-emitting phosphor layer, or one blue-emitting phosphor layer). A gap between adjacent phosphor layers may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  The phosphor layer uses a luminescent crystal particle composition prepared from luminescent crystal particles. For example, a red photosensitive luminescent crystal particle composition (red luminescent phosphor slurry) is applied to the entire surface and exposed. And developing to form a red light-emitting phosphor layer, and then applying a green photosensitive light-emitting crystal particle composition (green light-emitting phosphor slurry) to the entire surface, exposing and developing the green light-emitting phosphor. Then, a blue photosensitive luminescent crystal particle composition (blue light emitting phosphor slurry) is applied to the entire surface, exposed and developed to form a blue light emitting phosphor layer. be able to. Alternatively, after sequentially applying the red light emitting phosphor slurry, the green light emitting phosphor slurry, and the blue light emitting phosphor slurry, each phosphor slurry may be sequentially exposed and developed to form each phosphor layer. Each phosphor layer may be formed by a screen printing method, an ink jet printing method, a float coating method, a sedimentation coating method, a phosphor film transfer method, or the like. The average thickness of the phosphor layer on the substrate is not limited, but is preferably 3 μm to 20 μm, preferably 5 μm to 10 μm. The phosphor material constituting the luminescent crystal particles can be appropriately selected from conventionally known phosphor materials. In the case of color display, a phosphor material whose color purity is close to the three primary colors specified by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow time of the three primary colors is almost equal. It is preferable to combine them.

  The light absorption layer that absorbs light from the phosphor layer is preferably formed between adjacent phosphor layers or between the partition wall and the substrate from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As the material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor layer. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of a vacuum deposition method, a sputtering method and an etching method, a combination of a vacuum deposition method, a sputtering method, a spin coating method and a lift-off method, a screen printing method, a lithography technique, etc. Thus, it can be formed by an appropriately selected method.

  In order to prevent the electrons recoiled from the phosphor layer or the secondary electrons emitted from the phosphor layer from entering other phosphor layers, so-called optical crosstalk (color turbidity) is generated. Alternatively, it is preferable to provide a partition in order to prevent electrons recoiled from the phosphor layer or secondary electrons emitted from the phosphor layer from entering another phosphor layer.

  Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, forming a partition wall forming material layer on a substrate using a screen printing or metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the part of the partition wall forming material layer to be covered is covered with a mask layer, and then the exposed part of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall.

  As a planar shape of the part surrounding the phosphor layer in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface and a kind of opening region), a rectangular shape, a circular shape, an elliptical shape, an oval shape, a triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygons, and the like. By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective material layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent the electron beam from colliding with the partition wall and releasing gas from the partition wall. May be formed.

  In the flat display device, the space between the first panel and the second panel is in a high vacuum. Therefore, if a spacer made of a high resistance material such as ceramic material or glass is not disposed between the first panel and the second panel, the flat display device is damaged by atmospheric pressure. End up. The spacer can be made of ceramics or glass, for example. When the spacer is made of ceramics, the ceramics include mullite, alumina, barium titanate, lead zirconate titanate, zirconia, cordiolite, borosilicate barium, iron silicate, glass ceramic materials, titanium oxide and chromium oxide. Examples thereof include iron oxide, vanadium oxide, and nickel oxide added. In this case, the spacer can be manufactured by forming a so-called green sheet, firing the green sheet, and cutting the green sheet fired product. Moreover, soda-lime glass can be mentioned as glass which comprises a spacer. The spacer may be fixed by being sandwiched between the partition walls, for example. Alternatively, for example, a spacer holding part may be formed on the first panel or the second panel and fixed by the spacer holding part.

An antistatic film may be provided on the surface of the spacer. The material constituting the antistatic film preferably has a secondary electron emission coefficient close to 1, and as the material constituting the antistatic film, a semimetal such as graphite, an oxide, a boride, a carbide, a sulfide, and A nitride or the like can be used. For example, compounds containing a metalloid element ₂ such as a semi-metal and MoSe such as _{graphite, CrO x, CrAl x O y} , Nd 2 O 3, La x Ba 2-x CuO 4, La x Ba 2-x CuO 4, Oxides such as La _x Y _1-x CrO ₃ , borides such as AlB ₂ and TiB ₂ , carbides such as SiC, sulfides such as MoS ₂ and WS ₂ , and nitrides such as BN, TiN and AlN In addition, for example, materials described in, for example, JP-T-2004-500688 can be used. The antistatic film may be composed of a single type of material, may be composed of a plurality of types of materials, may be a single layer structure, or may be a multilayer structure. May be. The antistatic film can be formed based on a known method such as a sputtering method, a vacuum deposition method, a CVD method, or the like.

  When joining the three members of the first panel, the second panel, and the joining member, it is desirable to join the three members simultaneously. If the three-party simultaneous bonding is performed in a high vacuum atmosphere, the space surrounded by the first panel, the second panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the first panel, the second panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the pressure of the atmosphere at the time of joining may be normal pressure / depressurized, and the gas constituting the atmosphere may be air, or nitrogen gas or group 0 of the periodic table An inert gas containing a gas belonging to (for example, Ar gas) may be used.

  When exhaust is performed, the exhaust can be performed through an exhaust pipe called a tip pipe connected in advance to the first panel and / or the second panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), A hollow tube made of an iron (Fe) alloy containing 6% by weight of chromium (Cr)], and a frit glass or around a through hole provided in an ineffective region of the first panel and / or the second panel. It joins using the low melting-point metal material described below, and after the space reaches a predetermined degree of vacuum, it is sealed by thermal fusion or sealed by pressure bonding. In addition, if the whole flat display device is once heated and then cooled before sealing, it is preferable because residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. .

Here, the low melting point metal material is a material having a melting point of about 120 to 400 ° C., specifically, In (indium: melting point 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220-370 ° C), Sn ₉₅ Cu ₅ (melting point 227-370 ° C) and other tin (Sn) high temperature solders; Pb _97.5 Ag _2.5 (melting point 304 ° C), Pb _94.5 Ag _5.5 (melting point 304 ~ 365 ° C), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C) and other lead (Pb) high temperature solders; Zn ₉₅ Al ₅ (melting point 380 ° C) and other zinc (Zn) high temperature solders; Sn ₅ Tin-lead standard solder such as Pb ₉₅ (melting point: 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point: 316 to 322 ° C.); brazing material such as Au ₈₈ Ga ₁₂ (melting point: 381 ° C.) All represent atomic%).

In the flat display device of the present invention, the joining member including at least a part of the frit glass layer is in contact with the protective film made of a metal oxide. The metal oxide has very low reactivity with PbO which is a component of the frit glass layer. Therefore, when the frit glass layer constituting the joining member is fired, the reaction shown in the above reaction formula (1) can be surely prevented, and as a result, there is no possibility of generating nitrogen gas. There is no problem that the frit glass layer constituting the member foams and the airtightness cannot be maintained, and the occurrence of such a problem can be prevented more reliably than the barrier material layer made of SiO _2. be able to. Further, when the frit glass layer constituting the joining member is fired, the presence of a protective film made of a metal oxide indicates that the metal constituting the extraction electrode located below the joining member reacts with PbO contained in the frit glass layer. Can be surely prevented. Therefore, it is the metal constituting the lead-out electrode is oxidized, extraction electrode, or disconnected, to is not generated a problem a high resistance, than a barrier material layer made of SiO _2, more reliably, thus Occurrence of various problems can be suppressed. Moreover, in the method for assembling the flat display device of the present invention, since the protective film is formed based on the coating method, the protective film can be formed very easily, and an expensive film forming apparatus is not required. In addition, it is possible to easily perform a process in which a protective film is selectively formed in the region of the first panel or the insulating film that should be positioned below the bonding member and no protective film is formed in other regions.

  Hereinafter, the present invention will be described based on embodiments with reference to the drawings. First, flat display devices according to first to eighth embodiments and flat display devices according to first to eighth embodiments are assembled. An outline of the flat display device in the method will be described.

More specifically, the flat display devices according to the first to eighth embodiments include a cold cathode field emission display device (hereinafter abbreviated as a display device). The first panel constituting the display device of Examples 1 to 8 may be hereinafter referred to as a cathode panel CP, and the second panel may be hereinafter referred to as an anode panel AP. Here, a schematic partial sectional view of a Spindt-type cold cathode field emission device (hereinafter referred to as a field emission device) in the display devices of Examples 1 to 8 is the same as that shown in FIG. A schematic partial sectional view of a type field emission device is the same as that shown in FIG. However, in Example 1 to Example 4, the insulating film 16 is not provided (a flat display device according to the first aspect of the present invention). On the other hand, in Examples 5 to 8, an insulating film 16 is provided (a flat display device according to the second aspect of the present invention). The first panel P ₁ of the (cathode panel CP) and the second panel P ₂ first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) when decomposing (anode panel AP) A schematic exploded perspective view of a part is the same as that shown in FIG. 39, and the arrangement state of the components constituting the electron emission region when the electron emission region is viewed from the anode panel side is shown in FIG. The same as shown in A). Note that the arrangement of the effective area, the ineffective area, the cathode electrode, the gate electrode, and the extraction electrode in the first panel P ₁ (cathode panel CP) is schematically shown in FIG.

That is, the display device of the first to eighth embodiments, or the display device in the method of assembling the display devices of the first to eighth embodiments,
(A) a first panel effective area EF ₁ in which electron emission areas EA for emitting electrons are arranged in a two-dimensional matrix, and a first panel invalid area NE ₁ surrounding the first panel effective area EF ₁ ; A first panel P ₁ (cathode panel CP) in which a plurality of extraction electrodes 11A and 13A are provided in the first panel invalid area NE ₁ to drive the electron emission area EA;
(B) The second panel effective area EF ₂ in which the phosphor layer 22 and the anode electrode 24 with which the electrons emitted from the electron emission area EA collide are formed, and the second panel surrounding the second panel effective area EF ₂ A second panel P ₂ (anode panel AP) having an ineffective area NE ₂ ;
(C) Joining which includes a frit glass layer at least in part and joins the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) in their ineffective regions NE ₁ and NE ₂ . Members 30, 130,
It has.

  Here, in the flat display devices according to the first embodiment, the second embodiment, the fifth embodiment, and the sixth embodiment, the joining member 30 is formed on the frame body 31 and the bottom surface and the top surface of the frame body 31. The first frit glass layer 32 and the second frit glass layer 33 are formed. On the other hand, in the flat display devices of Examples 3, 4, 7, and 8, the entire joining member 130 is made of a frit glass layer.

  Furthermore, in the flat display devices of Example 1 and Example 2, at least on the surfaces of the extraction electrodes 11A and 13A located below the first frit glass layer 32 formed on the bottom surface of the frame 31, A protective film 40 made of a metal oxide is formed, and the first frit glass layer 32 is in contact with the protective film 40.

  In the flat display devices according to the third and fourth embodiments, a protective film 40 made of a metal oxide is formed on at least the surfaces of the extraction electrodes 11A and 13A located below the bonding member 130. The joining member 130 is in contact with the protective film 40.

  On the other hand, in the flat display devices of Examples 5 and 6, the insulating film 16 is formed on the surfaces of the extraction electrodes 11A and 13A, and at least the first frit glass formed on the bottom surface of the frame body 31. A protective film 40 made of a metal oxide is formed in the region of the insulating film 16 located below the layer 32, and the first frit glass layer 32 is in contact with the protective film 40.

  In the flat display devices according to the seventh and eighth embodiments, the insulating film 16 is formed on the surfaces of the extraction electrodes 11A and 13A, and at least the region of the insulating film 16 located below the bonding member 130. A protective film 40 made of a metal oxide is formed, and the bonding member 130 is in contact with the protective film 40.

Here, in the first to eighth embodiments, the field emission device constituting the electron emission region EA is configured by, for example, a Spindt type field emission device. As shown in FIG. 37, the Spindt-type field emission device is
(A) a cathode electrode 11 formed on the support 10;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a gate electrode 13 formed on the insulating layer 12;
(D) the opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the second opening 14B provided in the insulating layer 12), and
(E) a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14;
It is composed of

Or in Example 1- Example 8, the field emission element is comprised from the flat type field emission element, for example. As shown in FIG.
(A) a cathode electrode 11 formed on the support 10;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a gate electrode 13 formed on the insulating layer 12;
(D) the opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the second opening 14B provided in the insulating layer 12), and
(E) an electron emission portion 15A formed on the cathode electrode 11 located at the bottom of the opening 14;
It is composed of The electron emission portion 15A is composed of, for example, a large number of carbon nanotubes partially embedded in a matrix.

In the cathode panel CP, the cathode electrode 11 has a strip shape extending in the first direction (X direction), and the gate electrode 13 has a strip shape extending in a second direction (Y direction) different from the first direction. The cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projected images of both the electrodes 11 and 13 are orthogonal to each other. An overlapping region where the strip-shaped cathode electrode 11 and the strip-shaped gate electrode 13 overlap is an electron emission region EA. The extension part of the cathode electrode 11 corresponds to the extraction electrode 11A, and the extension part of the gate electrode 13 corresponds to the extraction electrode 13A. The electron emission area EA corresponding to one subpixel is provided with a plurality of field emission elements, and the electron emission area EA corresponding to one subpixel is an effective area (first panel effective area EF _{1) of the} cathode panel CP. ) Are arranged in a two-dimensional matrix.

In the fifth to eighth embodiments, the insulating layer 12 and the gate electrode 13 are covered with an insulating film 16 made of silicon nitride (Si ₃ N ₄ ) except for the electron emission region EA. The insulating film 16 is provided for protecting the components constituting the cathode panel CP in various manufacturing processes. Furthermore, an insulating film opening 17 is formed in the insulating film 16, an interlayer insulating layer 18 is formed on the insulating film 16, and a focusing electrode 19 is provided on the insulating film 16 so as to surround the insulating film opening 17. The focusing electrode 19 can exert a common focusing effect on a plurality of field emission devices. The ineffective area (first panel ineffective area NE ₁ ) of the cathode panel CP is provided with a through-hole (not shown) for evacuation, and the through-hole has a tip tube sealed after evacuation. A so-called exhaust pipe (not shown) is attached. On the other hand, in the first to fourth embodiments, the interlayer insulating layer 18 is formed on the insulating layer 12 and the gate electrode 13, and the focusing electrode 19 is provided on the insulating layer 12 and the gate electrode 13 so as to surround the electron emission region EA. The focusing electrode 19 can exert a common focusing effect on a plurality of field emission devices.

In Examples 1 to 8, the second panel P ₂ (anode panel AP) includes the substrate 20 and the phosphor layer 22 formed on the substrate 20 (in the case of color display, the red light-emitting phosphor layer 22R). , A green light emitting phosphor layer 22G, a blue light emitting phosphor layer 22B), and an anode electrode 24 covering the phosphor layer 22. That is, the anode panel AP is more specifically formed on the substrate 20 and the substrate 20 between the partition walls 21 formed on the substrate 20 and the phosphor layer 22 made of a large number of phosphor particles. (A red light emitting phosphor layer 22R, a green light emitting phosphor layer 22G, a blue light emitting phosphor layer 22B), and an anode electrode 24 formed on the phosphor layer 22. The anode electrode 24 is made of aluminum (Al) having a thickness of about 70 nm, is in the form of a thin sheet covering the effective region (second panel effective region EF ₂ ), and covers the partition wall 21 and the phosphor layer 22. Is provided. Between the phosphor layer 22 and the phosphor layer 22, and between the partition wall 21 and the substrate 20, a light absorption layer (black) is used to prevent the occurrence of color turbidity and optical crosstalk in the display image. Matrix) 23 is formed. The space sandwiched between the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) is in a vacuum state (pressure: for example, 10 ⁻³ Pa or less).

  One subpixel is composed of an electron emission area EA on the cathode panel side and a phosphor layer 22 on the anode panel side facing a group of these field emission elements. In the effective area, pixels (pixels) are arranged in an order of several hundred thousand to several million, for example. In a display device for color display, one pixel (one pixel) is composed of a set of a red light emitting subpixel, a green light emitting subpixel, and a blue light emitting subpixel.

In the first to eighth embodiments, the cathode electrode 11 is connected to the cathode electrode control circuit 61 via the extraction electrode 11A that is the extension portion, and the gate electrode 13 is connected to the extraction electrode 13A that is the extension portion. The focusing electrode 19 is connected to a focusing electrode control circuit (not shown), and the anode electrode 24 is connected to an anode electrode control circuit 63. These control circuits can be constituted by known circuits. During actual operation of the display device, the anode voltage V _A applied from the anode electrode control circuit 63 to the anode electrode 24 is normally constant, and can be, for example, 5 kilovolts to 15 kilovolts. On the other hand, regarding the voltage V _C applied to the cathode electrode 11 and the voltage V _G applied to the gate electrode 13 during actual operation of the display device,
(1) A method in which the voltage V _C applied to the cathode electrode 11 is constant and the voltage V _G applied to the gate electrode 13 is changed. (2) The voltage V _C applied to the cathode electrode 11 is changed and applied to the gate electrode 13. the voltage V _G for changing the voltage V _C applied to the method (3) a cathode electrode 11, constant, and may employ any method to change the voltage V _G applied to the gate electrode 13.

During actual operation of the display device, a relatively negative voltage (V _C ) is applied to the cathode electrode 11 from the cathode electrode control circuit 61, and a relatively positive voltage (V _G ) is applied to the gate electrode 13. 62, for example, 0 volt is applied to the focusing electrode 19 from the focusing electrode control circuit, and a positive voltage (anode voltage V _A ) higher than that of the gate electrode 13 is applied to the anode electrode 24 from the anode electrode control circuit 63. Is done. When performing display in such a display device, for example, a scanning signal is input to the cathode electrode 11 from the cathode electrode control circuit 61, and a video signal is input to the gate electrode 13 from the gate electrode control circuit 62. Note that a video signal may be input to the cathode electrode 11 from the cathode electrode control circuit 61 and a scanning signal may be input to the gate electrode 13 from the gate electrode control circuit 62. Electrons are emitted from the electron emission portions 15 and 15A based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 24. It passes through 24 and collides with the phosphor layer 22. As a result, the phosphor layer 22 is excited to emit light, and a desired image can be obtained. That is, the operation of the display device is basically a voltage V _G applied to the gate electrode 13, and is controlled by the voltage V _C applied to the cathode electrode 11, provided on the first panel ineffective area NE ₁ The electron emission area EA is driven through the plurality of extraction electrodes 11A and 13A.

The frit glass layers 32 and 33 in Example 1, Example 2, Example 5, and Example 6 are made of B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass. The frame 31 is made of glass or ceramics and has a rod shape or a frame shape (frame shape). In addition, the frit glass paste was applied to the bottom surface and the top surface of the frame body 31 and pre-baked at 350 ° C. for 20 minutes to form the frame body 31 and the bottom surface and top surface of the frame body 31. The joining member 30 which consists of the 1st frit glass layer 32 and the 2nd frit glass layer 33 can be obtained. On the other hand, the frit glass layer constituting the entire joining member 130 in Example 3, Example 4, Example 7, and Example 8 is B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO. It consists of a glass frit glass. Further, the frit glass layer constituting the joining member 130 is pre-baked at 350 ° C. for 20 minutes, whereby the joining member 130 can be obtained.

In Examples 5 to 8, as described above, the insulating film 16 made of Si ₃ N ₄ is formed on the surfaces of the extraction electrodes 11A and 13A. Furthermore, a protective film 40 made of a metal oxide is formed at least in the region of the insulating film 16 located below the bonding members 30 and 130, and the bonding members 30 and 130 and the protective film 40 are in contact with each other. Yes.

In the first to eighth embodiments, the protective film 40 is specifically composed of fine particles of titanium oxide and TiO ₂ . The inner protrusion 41 that constitutes the first protective film width defining portion and the outer protrusion 42 that constitutes the second protective film width defining portion are formed of a photosensitive polyimide resin, and the first protective film width defining portion. The inner wettability control layer (inner water repellent layer) 43 constituting the part and the outer wettability control layer (outer water repellent layer) 44 constituting the second protective film width defining part are silane compounds, more specifically Consists of octadecyltriethoxysilane (ODSE).

  The presence / absence of the insulating film 16, the structure of the joining members 30 and 130, and the configuration of the protective film width defining portion in Examples 1 to 8 are summarized in Table 1 below.

Example 1 relates to a flat display device and an assembling method thereof according to the first aspect of the present invention. FIG. 1 shows an enlarged schematic partial end view of the vicinity of the joining member along the second direction (Y direction) in the display device (cold cathode field emission display device) of the first embodiment. FIG. 2 shows an enlarged schematic partial end view in the vicinity of the joining member along the direction (X direction). In the enlarged schematic partial end view in the vicinity of the joining member, the components such as the phosphor layer and the anode electrode constituting the second panel P ₂ (anode panel AP) are not shown. Further, in the first panel P ₁ (cathode panel CP), illustration of the electron emission portion, the opening, the interlayer insulating layer, and the focusing electrode is omitted.

In the display device of Example 1,
A portion of the first panel P ₁ (cathode panel CP) on the inner side of the region of the first panel P ₁ (cathode panel CP) located below the joining member 30 has a first extending substantially parallel to the joining member 30. The protective film width defining portion (inner protrusion 41) is formed substantially continuously (in Example 1, or in Example 3, Example 5, and Example 7 to be described later),
A portion of the first panel P ₁ (cathode panel CP) outside the region of the first panel P ₁ (cathode panel CP) located below the bonding member 30 has a second portion extending substantially parallel to the bonding member 30. The protective film width defining portion (outer protrusion 42) is formed substantially continuously (in Example 1, or in Examples 3, 5, and 7 described later) (see FIG. 1, (See Fig. 2)
The protective film 40 made of a metal oxide is a first panel P ₁ located between the first protective film width defining portion (inner protruding portion 41) and the second protective film width defining portion (outer protruding portion 42). (Cathode panel CP) and lead electrodes 11A and 13A are formed, and the bottom surface of the bonding member 30 is in contact with the protective film 40.

Hereinafter, a method for assembling the display device of Example 1 will be described with reference to FIGS. 3 to 6 which are schematic partial end views of the first panel P ₁ . 3 and 5 are enlarged schematic partial end views in the vicinity of the joining member along the second direction (Y direction), and FIGS. 4 and 6 show the first direction (X direction). FIG. Here, in FIGS. 3 to 6, or FIGS. 9 to 14, FIGS. 21 to 24, and FIGS. 27 to 32, which will be described later, the structure of the phosphor layer 22 and the anode electrode 24 that constitute the anode panel AP. The illustration of elements is omitted, and the electron emission portions 15 and 15A, the opening 14, the interlayer insulating layer 18, and the focusing electrode 19 in the cathode panel CP are omitted.

[Step-100]
First, a first panel P ₁ (cathode panel CP) provided with a field emission device and a second panel P ₂ (anode panel AP) provided with an anode electrode 24, a phosphor layer 22 and the like are prepared. The bonding member 30 is made of a frame 31 having frit glass layers 32 and 33 made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass formed on the bottom and top surfaces. prepare.

[Step-110]
In the first embodiment, the bonding member is formed on the portion of the first panel P ₁ (cathode panel CP) inside the region of the first panel P ₁ (cathode panel CP) that should be positioned below the bonding member 30. The first protective film width defining portion (inner protrusion 41) extending substantially in parallel with 30 is substantially continuous (in Example 1, or in Examples 3, 5, and 7 described later, continuously). ) formed, and the portion of the first panel P ₁ to be located under the bonding member 30 (cathode panel CP) the first panel P ₁ of the outside than the area of the (cathode panel CP), the joint member 30 and substantially The second protective film width defining portion (outer protrusion 42) extending in parallel is formed substantially continuously (in Example 1, or in Examples 3, 5, and 7 described later, continuously). (See FIGS. 3 and 4). Specifically, a liquid photosensitive polyimide resin is applied to the first panel invalid area NE ₁ using a slit coater, and exposure, development, drying, and baking are performed, so that the inner protrusion 41 and the outer protrusion 42 are formed. Can be formed. The height of the inner protrusion 41 and the outer protrusion 42 was 40 μm, the width was 100 μm, and the distance (D) between the inner protrusion 41 and the outer protrusion 42 was 5 mm.

[Step-120]
Next, in the region of the first panel P ₁ (cathode panel CP) located between the first protective film width defining portion (inner protrusion 41) and the second protective film width defining portion (outer protrusion 42). Then, the protective film 40 is formed based on the coating method. Specifically, using a dispenser 50, a coating solution in which 0.5% by weight of titanium oxide fine particles having an average particle diameter of 0.2 μm are dispersed in isopropyl alcohol is used to form an inner protrusion 41 and an outer protrusion 42. the first panel P ₁ located between applying to the area of the (cathode panel CP) (see FIGS. 5 and 6). The viscosity of the coating solution containing the protective layer material, 1 × 10 ^-3 so ^{Pa · s~4 × 10 -3 Pa ·} s (1~4 centipoise) degree and a very low, the inner projecting portion 41 and the outer projections After application, it spreads quickly on the region of the first panel P ₁ (cathode panel CP) located between the first panel P _{1 and} the first panel P ₁ . In the coating method using the dispenser 50, it is not necessary to control the width of the protective film material to be applied, and it is only necessary to control the coating amount. Then, the protective film 40 can be obtained by baking the film of the protective film material at 80 ° C. to 150 ° C. The average thickness of the protective film 40 was 1.2 μm.

[Step-130]
Next, specifically, the first frit glass layer 32 is in contact with the protective film 40 so that the bonding member 30 is in contact with the protective film 40 and in contact with the second panel invalid region NE _2. The first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 are assembled so that the layer 32 is in contact with the second panel invalid region NE ₂ . More specifically, the second panel P _{2 in} which the joining member 30 is arranged so that the second frit glass layer 33 is in contact with the second panel invalid area NE ₂ and a spacer (not shown) is attached at a predetermined position. The (anode panel AP) is placed on a mounting table (panel stage) (not shown), and alignment marks (not shown) provided on the first panel P ₁ and the second panel P ₂ are optically read. The first panel P ₁ (cathode panel CP) is placed on the bonding member 30 so that the first frit glass layer 32 and the protective film 40 are in contact with each other while adjusting the position of the first panel P _{1 with} respect to the panel P ₂ . Then, the first panel P ₁ and the second panel P ₂ are fixed by being sandwiched between clips with springs, for example.

[Step-140]
Thereafter, the assembly of the first panel P ₁ , the second panel P ₂ and the joining member 30 is carried into a firing furnace, and heat treatment is performed in the firing furnace, whereby the first frit glass constituting the joining member 30 is formed. Layer 32 and second frit glass layer 33 are fired at a temperature of about 390 ° C. for about 20 minutes. The pressure of the atmosphere during firing may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be air, or nitrogen gas or a gas belonging to group 0 of the periodic table (for example, Ar gas) ) Including an inert gas. Thereby, the first panel P ₁ and the second panel P ₂ can be joined in the invalid regions NE ₁ and NE ₂ .

[Step-150]
Thereafter, the entire assembly is unloaded from the firing furnace, and a space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 is passed through (not shown). And the exhaust pipe (not shown), and when the pressure in the space reaches about 10 ⁻⁴ Pa, the exhaust pipe is sealed by heating and melting. In addition, if the entire display device is once heated and then cooled down before sealing, the residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. It is. In this way, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 can be evacuated. Thereafter, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

In the display device thus manufactured, foaming of the first frit glass layer 32 and oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all. Adhesiveness was exhibited. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

In addition, if the atmosphere at the time of joining the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) via the joining member 30 at the peripheral portion thereof is a high vacuum atmosphere, The space can be evacuated simultaneously with the joining of the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP). The same applies to the following embodiments.

  The second embodiment is a modification of the first embodiment. FIG. 7 shows an enlarged schematic partial end view of the vicinity of the joining member along the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 2, and FIG. FIG. 8 shows an enlarged schematic partial end view of the vicinity of the joining member along the direction (X direction).

In the display device of Example 2,
A portion of the first panel P ₁ (cathode panel CP) on the inner side of the region of the first panel P ₁ (cathode panel CP) located below the joining member 30 has a first extending substantially parallel to the joining member 30. The protective film width defining portion (inner wettability control layer 43) is formed substantially continuously (in Example 2, or in Examples 4, 6, and 8 described later, continuously),
A portion of the first panel P ₁ (cathode panel CP) outside the region of the first panel P ₁ (cathode panel CP) located below the joining member 30 has a second portion extending substantially parallel to the joining member 30. The protective film width defining portion (outer wettability control layer 44) is formed substantially continuously (continuously in Example 2, Example 4, Example 6, and Example 8 described later),
The protective film 40 made of a metal oxide is a first panel P ₁ located between the first protective film width defining portion (inner protruding portion 41) and the second protective film width defining portion (outer protruding portion 42). (Cathode panel CP) and lead electrodes 11A and 13A are formed, and the bottom surface of the bonding member 30 is in contact with the protective film 40.

Hereinafter, a method for assembling the display device of Example 2 will be described with reference to FIGS. 9 to 14 which are schematic partial end views of the first panel P ₁ . 9, FIG. 11 and FIG. 13 are enlarged schematic partial end views of the vicinity of the joining member along the second direction (Y direction). FIG. 10, FIG. 12 and FIG. FIG. 3 is an enlarged schematic partial end view of the vicinity of a joining member along a direction 1 (X direction).

[Step-200]
First, as in [Step-100] of the first embodiment, the first panel P ₁ (cathode panel CP) provided with the field emission elements, the second electrode provided with the anode electrode 24, the phosphor layer 22, and the like. A panel P ₂ (anode panel AP) is prepared, and furthermore, frit glass layers 32 and 33 made of B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass have bottom and top surfaces. The joining member 30 which consists of the frame 31 formed in this is prepared.

[Step-210]
In the second embodiment, the first panel P ₁ (cathode panel CP) inside the region of the first panel P ₁ (cathode panel CP) to be positioned below the joining member 30 is joined to the portion. The first protective film width defining portion (inner wettability control layer 43) extending substantially parallel to the member 30 is substantially continuous (in the second embodiment or in the fourth, sixth, and eighth embodiments described later). The joining member is formed on the portion of the first panel P ₁ (cathode panel CP) outside the region of the first panel P ₁ (cathode panel CP) to be formed and positioned below the joining member 30. The second protective film width defining portion (outer wettability control layer 44) extending substantially parallel to 30 is substantially continuous (in Example 2 or Examples 4, 6, and 8 described later, continuous). To)).

Specifically, wettability control including, for example, octadecyltriethoxysilane (ODSE), which is a silane compound known as a material having high hydrophobicity and low surface energy of the base, in the first panel invalid region NE _1. A layer forming solution (solvent: ethyl alcohol) is applied and dried to form a wettability control film 45 (see FIGS. 9 and 10), and then an inner wettability control layer 43 and an outer wettability control layer 44 are formed. The wettability control film 45 made of ODSE is decomposed by irradiating the wettability control film 45 with ultraviolet light having a wavelength of 240 nm or less except for the portion to be processed. Thus, the inner wettability control layer 43 and the outer wettability control layer 44 made of ODSE can be obtained (see FIGS. 11 and 12). Thus, while increasing holding the surface energy of the portion of the first panel P ₁ to form the protective layer 40 (cathode panel CP), the surface energy of the portion of the first panel P ₁ adjacent to this portion (cathode panel CP) Can be reduced. Therefore, in the same step as [Step-120] in Example 1, when a coating solution containing a protective film material is applied based on the coating method, the inner wettability control layer 43 and the outer wettability control layer 44 are interposed. On the portion of the first panel P ₁ (cathode panel CP) located, the coating solution spreads quickly, but does not spread over the inner wettability control layer 43 and the outer wettability control layer 44. In this way, it is possible to regulate the portion to be applied on the first panel P ₁ (cathode panel CP).

The inner wettability control layer 43 and the outer wettability control layer 44 have a height of 0.5 μm, a width of 0.5 μm, and a distance D between the inner wettability control layer 43 and the outer wettability control layer 44 of 5 mm. . The contact angle between the coating solution containing the protective film material for forming the protective film 40 and the first panel P ₁ (specifically, the support 10) is θ ₀ , and the coating solution and the inner wettability control layer are used. 43 or when the contact angle with the outer wettability control layer 44 is θ ₁ , θ ₀ = 5 degrees and θ ₁ = 100 degrees.

[Step-220]
Next, in the same manner as in [Step-120] in Example 1, the first protective film width defining portion (inner wettability control layer 43) and the second protective film width defining portion (outer wettability control layer 44) A protective film 40 is formed on the region of the first panel P ₁ (cathode panel CP) positioned between the two by a coating method (see FIGS. 13 and 14). Thereafter, in the same manner as in [Step-130] of Example 1, the first panel P ₁ (cathode panel CP) is formed so that the joining member 30 is in contact with the protective film 40 and in contact with the second panel invalid region NE _2. ), The second panel P ₂ (anode panel AP), and the joining member 30 are assembled, and the frit glass layer (first frit glass layer 32) constituting the joining member 30 is formed in the same manner as in [Step-140] of the first embodiment. And the second frit glass layer 33) are fired, so that the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) are joined in their ineffective regions NE ₁ and NE ₂ . . Next, in the same manner as in [Step-150] of Example 1, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 is exhausted. Then, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

Even in the display device thus manufactured, the foaming of the first frit glass layer 32 and the oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all, and it is good between the first frit glass layer 32 and the protective film 40. Showed good adhesion. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  The third embodiment is also a modification of the first embodiment. FIG. 15 shows an enlarged schematic partial end view of the vicinity of the joining member in the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 3, and FIG. FIG. 16 shows an enlarged schematic partial end view in the vicinity of the joining member along the direction (X direction).

In the display device of Example 3,
A portion of the first panel P ₁ (cathode panel CP) on the inner side of the region of the first panel P ₁ (cathode panel CP) located below the joining member 130 has a first extending substantially parallel to the joining member 130. The protective film width defining portion (inner protrusion 41) is formed substantially continuously,
A portion of the first panel P ₁ (cathode panel CP) outside the region of the first panel P ₁ (cathode panel CP) located below the joining member 130 has a second portion extending substantially parallel to the joining member 130. The protective film width defining portion (outside protrusion 42) is formed substantially continuously,
The protective film 40 made of a metal oxide is a first panel P ₁ located between the first protective film width defining portion (inner protruding portion 41) and the second protective film width defining portion (outer protruding portion 42). (Cathode panel CP) and extraction electrodes 11A and 13A are formed, and the bottom surface of the bonding member 130 is in contact with the protective film 40.

  That is, the display device according to the third embodiment has the same configuration and structure as the display device according to the first embodiment, except that the configuration and structure of the bonding member 130 are different from the configuration and structure of the bonding member 30 in the display device according to the first embodiment. Therefore, detailed description is omitted.

  Hereinafter, a method for assembling the display device according to the third embodiment will be described.

[Step-300]
First, in the same manner as in [Step-100] of Example 1, the first panel P ₁ (cathode panel CP) provided with the field emission device, the first electrode provided with the anode electrode 24, the phosphor layer 22, and the like are provided. 2 panel P ₂ (anode panel AP) is prepared, and a joining member made of a frit glass layer made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass 130 is prepared.

[Step-310]
Then, in the same manner as in [Step-110] of Example 1, the first panel P ₁ (cathode panel CP than the area of the inner joint member first panel P ₁ to be positioned below the 130 (cathode panel CP) ), A first protective film width defining portion (inner protrusion 41) extending substantially parallel to the joining member 130 is formed substantially continuously, and the first panel P should be positioned below the joining member 130. ₁ The second protective film width defining portion (outside protrusion 42) extending substantially parallel to the bonding member 130 is generally provided on the portion of the first panel P ₁ (cathode panel CP) outside the region of the 1 (cathode panel CP). Form continuously.

[Step-320]
Next, in the same manner as in [Step-120] of Example 1, the region of the first panel P ₁ (cathode panel CP) located between the inner protrusion 41 and the outer protrusion 42 is protected based on the coating method. A film 40 is formed.

[Step-330]
Next, in the same manner as in [Step-130] of Example 1, as the bottom surface of the joint member 130 is in contact with the protective film 40, the top surface of the joint member 130 is in contact with the second panel ineffective area NE _2, the The first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 are assembled.

[Step-340]
Thereafter, the assembly of the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 is carried into a firing furnace, and heat treatment is performed in the firing furnace. The frit glass layer constituting the entire joining member 130 is fired at a temperature of about 390 ° C. for about 20 minutes. The pressure of the atmosphere during firing may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be air, or nitrogen gas or a gas belonging to group 0 of the periodic table (for example, Ar gas) ) Including an inert gas. As a result, the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) can be joined in their ineffective regions NE ₁ and NE ₂ .

[Step-350]
Thereafter, the entire assembly is unloaded from the firing furnace, and a space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 is passed through (not shown). And the exhaust pipe (not shown), and when the pressure in the space reaches about 10 ⁻⁴ Pa, the exhaust pipe is sealed by heating and melting. In addition, if the entire display device is once heated and then cooled down before sealing, the residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. It is. In this way, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 can be evacuated. Thereafter, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

In the display device thus manufactured, the foaming of the joining member 130 made entirely of a frit glass layer and the oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all. Good adhesion was shown. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  The fourth embodiment is a modification of the second and third embodiments. FIG. 17 shows an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the display device (cold cathode field emission display) of Example 4 as shown in FIG. FIG. 18 shows an enlarged schematic partial end view in the vicinity of the joining member along the direction (X direction).

In the display device of Example 4,
A portion of the first panel P ₁ (cathode panel CP) on the inner side of the region of the first panel P ₁ (cathode panel CP) located below the joining member 130 has a first extending substantially parallel to the joining member 130. The protective film width defining portion (inner wettability control layer 43) is formed substantially continuously,
A portion of the first panel P ₁ (cathode panel CP) outside the region of the first panel P ₁ (cathode panel CP) located below the joining member 130 has a second portion extending substantially parallel to the joining member 130. The protective film width defining portion (outer wettability control layer 44) is formed substantially continuously,
The protective film 40 made of a metal oxide is a first panel P ₁ located between the first protective film width defining portion (inner protruding portion 41) and the second protective film width defining portion (outer protruding portion 42). (Cathode panel CP) and extraction electrodes 11A and 13A are formed, and the bottom surface of the bonding member 130 is in contact with the protective film 40.

  That is, the display device according to the fourth embodiment has the same configuration and structure as the display device according to the second embodiment, except that the configuration and structure of the bonding member 130 are different from the configuration and structure of the bonding member 30 in the display device according to the second embodiment. Therefore, detailed description is omitted.

  Hereinafter, a method for assembling the display device according to the fourth embodiment will be described.

[Step-400]
First, in the same manner as in [Step-100] of Example 1, the first panel P ₁ (cathode panel CP) provided with the field emission device, the first electrode provided with the anode electrode 24, the phosphor layer 22, and the like are provided. 2 panel P ₂ (anode panel AP) is prepared, and a joining member made of a frit glass layer made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass 130 is prepared.

[Step-410]
The examples in the same manner as in [Step-210] of 2, the first panel P ₁ (cathode panel CP of the inside than the area of the first panel P ₁ to be located under the bonding member 130 (the cathode panel CP) ), A first protective film width defining portion (inner wettability control layer 43) extending substantially in parallel with the bonding member 130 is formed substantially continuously, and the first protective layer should be positioned below the bonding member 130. the portion of the panel P ₁ (cathode panel CP) the first panel P ₁ of the outside than the area of the (cathode panel CP), the second protective film width defining portion extending substantially parallel to the joint member 130 (outer wettability control layer 44) is formed substantially continuously.

[Step-420]
Next, in the same manner as in [Step-220] in Example 2, the coating is applied to the region of the first panel P ₁ (cathode panel CP) located between the inner wettability control layer 43 and the outer wettability control layer 44. The protective film 40 is formed based on the law. Thereafter, similarly to [Step-130] of Example 1, the bottom surface of the joint member 130 is in contact with the protective film 40, as the top surface of the joint member 130 is in contact with the second panel invalid region EF _2, first The panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 are assembled, and in the same manner as [Step-140] of the first embodiment, the frit constituting the entire joining member 130 is constructed. The glass layer is baked, and thus the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) are joined in their ineffective regions NE ₁ and NE ₂ . Next, in the same manner as in [Step-150] of Example 1, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 is exhausted. Then, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

Even in the display device thus manufactured, foaming of the joining member 130 made entirely of the frit glass layer, oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all, and the joining member 130 and the protective film 40 are not connected. Good adhesion was shown. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  Example 5 relates to a flat display device and an assembling method thereof according to the second aspect of the present invention. FIG. 19 shows an enlarged schematic partial end view of the vicinity of the joining member along the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 5, and FIG. An enlarged schematic partial end view of the vicinity of the joining member along the direction (X direction) is shown in FIG.

In the flat display device of Example 5,
A first protective film width defining portion (inner protrusion 41) extending substantially parallel to the bonding member 30 is substantially continuous with the portion of the insulating film 16 inside the region of the insulating film 16 located below the bonding member 30. Is formed,
In a portion of the insulating film 16 outside the region of the insulating film 16 located below the bonding member 30, a second protective film width defining portion (outer protrusion 42) extending substantially parallel to the bonding member 30 is substantially continuous. Is formed,
The protective film 40 made of a metal oxide is a portion of the insulating film 40 located between the first protective film width defining portion (inner protrusion 41) and the second protective film width defining portion (outer protrusion 42). The bottom surface of the bonding member 30 is in contact with the protective film 40.

  That is, since the display device of the fifth embodiment has the same configuration and structure as the display device of the first embodiment except that the insulating film 16 is formed, detailed description thereof is omitted.

Hereinafter, a method for assembling the display device of Example 5 will be described with reference to FIGS. 21 to 24 which are schematic partial end views of the first panel P ₁ . FIGS. 21 and 23 are enlarged schematic partial end views of the vicinity of the joining member along the second direction (Y direction). FIGS. 22 and 24 show the first direction (X direction). FIG.

[Step-500]
First, in the same manner as in [Step-100] of Example 1, the first panel P ₁ (cathode panel CP) provided with the field emission device, the first electrode provided with the anode electrode 24, the phosphor layer 22, and the like are provided. 2 panels P ₂ (anode panel AP) are prepared, and furthermore, frit glass layers 32 and 33 made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass are provided on the bottom and top sides. A joining member 30 comprising a frame 31 formed on the surface is prepared.

[Step-510]
In the fifth embodiment, the first protective film width regulation extending substantially in parallel with the bonding member 30 in the portion of the insulating film 16 inside the region of the insulating film 16 that should be positioned below the bonding member 30. A portion (inner protrusion 41) is formed substantially continuously, and extends substantially parallel to the bonding member 30 in a portion of the insulating film 16 outside the region of the insulating film 16 to be positioned below the bonding member 30. The second protective film width defining portion (outer protrusion 42) is formed substantially continuously (see FIGS. 21 and 22). Specifically, in the same manner as in [Step-110] in Example 1, a liquid photosensitive polyimide resin is applied to the first panel invalid area NE ₁ using a slit coater, and exposure, development, drying, and baking are performed. By doing so, the inner protrusion 41 and the outer protrusion 42 can be formed. The height of the inner protrusion 41 and the outer protrusion 42 was 40 μm, the width was 100 μm, and the distance (D) between the inner protrusion 41 and the outer protrusion 42 was 5 mm.

[Step-520]
Next, in the same manner as in [Step-120] in Example 1, it is positioned between the first protective film width defining portion (inner protruding portion 41) and the second protective film width defining portion (outer protruding portion 42). A protective film 40 is formed in the region of the insulating film 16 to be formed based on a coating method (see FIGS. 23 and 24).

[Step-530]
Next, in the same manner as in [Step-130] of Example 1, the first glass frit layer 32 is in contact with the protective film 40, so that the second frit glass layer 32 is in contact with the second panel ineffective area NE _2, the The first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 are assembled.

[Step-540]
Thereafter, similarly to [Step-140] of Example 1, the first panel P ₁ and the assembly of the second panel P ₂ and the joining member 30 is carried into a firing furnace, a heat treatment in a calcination furnace By applying, the first frit glass layer 32 and the second frit glass layer 33 constituting the joining member 30 are subjected to main baking at a temperature of about 390 ° C. for about 20 minutes. The pressure of the atmosphere during firing may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be air, or nitrogen gas or a gas belonging to group 0 of the periodic table (for example, Ar gas) ) Including an inert gas. Thereby, the first panel P ₁ and the second panel P ₂ can be joined in the invalid regions NE ₁ and NE ₂ .

[Step-550]
Thereafter, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 is exhausted in the same manner as in [Step-150] of the first embodiment. Then, wiring connection between the extraction electrodes 11A and 13A and necessary external circuits is performed to complete the display device.

In the display device thus manufactured, reaction between the first frit glass layer 32 and the insulating film 16 made of Si ₃ N ₄ , foaming of the first frit glass layer 32, oxidation and disconnection of the extraction electrodes 11A and 13A are not caused. Neither was recognized, and good adhesion was exhibited between the first frit glass layer 32 and the protective film 40. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  The sixth embodiment is a modification of the fifth embodiment. FIG. 25 shows an enlarged schematic partial end view of the vicinity of the joining member along the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 6. FIG. 26 shows an enlarged schematic partial end view of the vicinity of the joining member along the direction (X direction).

In the flat display device of Example 6,
A first protective film width defining portion (inner wettability control layer 43) extending substantially parallel to the bonding member 30 is provided in a portion of the insulating film 16 inside the region of the insulating film 16 positioned below the bonding member 30. It is formed almost continuously,
In the portion of the insulating film 16 outside the region of the insulating film 16 located below the bonding member 30, a second protective film width defining portion (outer wettability control layer 44) extending substantially parallel to the bonding member 30 is provided. It is formed almost continuously,
The protective film 40 made of a metal oxide is a portion of the insulating film 40 located between the first protective film width defining portion (inner protrusion 41) and the second protective film width defining portion (outer protrusion 42). The bottom surface of the bonding member 30 is in contact with the protective film 40.

  That is, the display device of the sixth embodiment has the same configuration and structure as the display device of the second embodiment except that the insulating film 16 is formed, and thus detailed description thereof is omitted.

Hereinafter, a method for assembling the display device according to the second embodiment will be described with reference to FIGS. 27 to 32 which are schematic partial end views of the first panel P ₁ . 27, 29, and 31 are enlarged schematic partial end views of the vicinity of the joining member along the second direction (Y direction). FIGS. FIG. 3 is an enlarged schematic partial end view of the vicinity of a joining member along a direction 1 (X direction).

[Step-600]
First, as in [Step-100] of the first embodiment, the first panel P ₁ (cathode panel CP) provided with the field emission elements, the second electrode provided with the anode electrode 24, the phosphor layer 22, and the like. A panel P ₂ (anode panel AP) is prepared, and furthermore, frit glass layers 32 and 33 made of B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass have bottom and top surfaces. The joining member 30 which consists of the frame 31 formed in this is prepared.

[Step-610]
Then, in the same manner as in [Step-210] in the second embodiment, the first insulating film 16 extending in a direction substantially parallel to the bonding member 30 to the inner side of the region of the insulating film 16 to be positioned below the bonding member 30. 1 of the protective film width defining portion (inner wettability control layer 43) is formed substantially continuously, and in the portion of the insulating film 16 outside the region of the insulating film 16 to be positioned below the bonding member 30, A second protective film width defining portion (outer wettability control layer 44) extending substantially parallel to the bonding member 30 is formed substantially continuously (see FIGS. 27, 28, 29, and 30).

The inner wettability control layer 43 and the outer wettability control layer 44 have a height of 0.5 μm, a width of 0.5 μm, and a distance D between the inner wettability control layer 43 and the outer wettability control layer 44 of 5 mm. . The contact angle between the coating solution containing the protective film material for forming the protective film 40 and the insulating film 16 is θ ₀ , and the contact angle between the coating solution and the inner wettability control layer 43 or the outer wettability control layer 44. Is θ ₁ , θ ₀ = 5 degrees and θ ₁ = 100 degrees.

[Step-620]
Next, in the same manner as in [Step-220] of Example 2, the protective film 40 is applied to the region of the insulating film 16 located between the inner wettability control layer 43 and the outer wettability control layer 44 based on the coating method. It forms (refer FIG.31 and FIG.32). Thereafter, similarly to [Step-130] of Example 1, the first glass frit layer 32 is in contact with the protective film 40, so that the second frit glass layer in contact with the second panel invalid region EF _2, the first panel P ₁ (cathode panel CP), second panel P ₂ (anode panel AP), and joining member 30 are assembled, and in the same manner as in [Step-140] of the first embodiment, the first frit glass constituting the joining member 30 is assembled. The layer 32 and the second frit glass layer 33 are fired. Next, in the same manner as in [Step-150] of Example 1, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 is exhausted. Then, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

Even in the display device thus manufactured, the foaming of the first frit glass layer 32 and the oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all, and it is good between the first frit glass layer 32 and the protective film 40. Showed good adhesion. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  The seventh embodiment is also a modification of the fifth embodiment. FIG. 33 shows an enlarged schematic partial end view of the vicinity of the joining member in the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 7, and FIG. FIG. 34 shows an enlarged schematic partial end view of the vicinity of the joining member along the direction (X direction).

In the flat display device of Example 7,
A first protective film width defining portion (inner protrusion 41) extending substantially parallel to the bonding member 130 is substantially continuous with a portion of the insulating film 16 inside the region of the insulating film 16 located below the bonding member 130. Is formed,
In a portion of the insulating film 16 outside the region of the insulating film 16 positioned below the bonding member 130, a second protective film width defining portion (outer protrusion 42) extending substantially parallel to the bonding member 130 is substantially continuous. Is formed,
The protective film 40 made of a metal oxide is a portion of the insulating film 40 located between the first protective film width defining portion (inner protrusion 41) and the second protective film width defining portion (outer protrusion 42). The bottom surface of the bonding member 30 is in contact with the protective film 40.

  That is, the display device according to the seventh embodiment has the same configuration and structure as the display device according to the third embodiment except that the insulating film 16 is formed.

  Hereinafter, a method for assembling the display device according to the seventh embodiment will be described.

[Step-700]
First, in the same manner as in [Step-100] of Example 1, the first panel P ₁ (cathode panel CP) provided with the field emission device, the first electrode provided with the anode electrode 24, the phosphor layer 22, and the like are provided. 2 panel P ₂ (anode panel AP) is prepared, and a joining member made of a frit glass layer made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass 130 is prepared.

[Step-710]
Then, in the same manner as in [Step-110] of the first embodiment, the first portion of the insulating film 16 inside the region of the insulating film 16 that should be positioned below the bonding member 130 extends substantially parallel to the bonding member 130. The protective film width defining portion 1 (inner protrusion 41) is formed substantially continuously, and the bonding member is formed on the portion of the insulating film 16 outside the region of the insulating film 16 to be positioned below the bonding member 130. A second protective film width defining portion (outer protrusion 42) extending substantially parallel to 130 is formed substantially continuously.

[Step-720]
Next, in the same manner as in [Step-120] of Example 1, the protective film 40 is formed in the region of the insulating film 16 located between the inner protrusion 41 and the outer protrusion 42 based on the coating method.

[Step-730]
Next, in the same manner as in [Step-130] of Example 1, as the bottom surface of the joint member 130 is in contact with the protective film 40, the top surface of the joint member 130 is in contact with the second panel invalid region EF _2, the The first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 are assembled.

[Step-740]
Thereafter, the assembly of the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 30 is placed in the firing furnace in the same manner as in [Step-140] of the first embodiment. The frit glass layer constituting the joining member 130 is fired at a temperature of about 390 ° C. for about 20 minutes by being carried in and subjected to heat treatment in a firing furnace. The pressure of the atmosphere during firing may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be air, or nitrogen gas or a gas belonging to group 0 of the periodic table (for example, Ar gas) ) Including an inert gas. As a result, the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) can be joined in their ineffective regions NE ₁ and NE ₂ .

[Step-750]
Thereafter, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 is exhausted in the same manner as in [Step-150] of the first embodiment. Then, wiring connection between the extraction electrodes 11A and 13A and necessary external circuits is performed to complete the display device.

In the display device thus manufactured, the foaming of the joining member 130 made entirely of a frit glass layer and the oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all. Good adhesion was shown. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  The eighth embodiment is a modification of the sixth and seventh embodiments. FIG. 35 shows an enlarged schematic partial end view of the vicinity of the joining member along the second direction (Y direction) in the display device (cold cathode field emission display device) of Example 8, and FIG. FIG. 36 shows an enlarged schematic partial end view of the vicinity of the joining member along the direction (X direction).

In the flat display device of Example 8,
A first protective film width defining portion (inner wettability control layer 43) extending substantially parallel to the bonding member 130 is formed in a portion of the insulating film 16 inside the region of the insulating film 16 positioned below the bonding member 130. It is formed almost continuously,
In the portion of the insulating film 16 outside the region of the insulating film 16 located below the bonding member 130, a second protective film width defining portion (outer wettability control layer 44) extending substantially parallel to the bonding member 130 is provided. It is formed almost continuously,
The protective film 40 made of a metal oxide is a portion of the insulating film 40 located between the first protective film width defining portion (inner protrusion 41) and the second protective film width defining portion (outer protrusion 42). The bottom surface of the bonding member 30 is in contact with the protective film 40.

  That is, the display device of the eighth embodiment has the same configuration and structure as the display device of the fourth embodiment except that the insulating film 16 is formed, and thus detailed description thereof is omitted.

  Hereinafter, a method for assembling the display device according to the eighth embodiment will be described.

[Step-400]
First, in the same manner as in [Step-100] of Example 1, the first panel P ₁ (cathode panel CP) provided with the field emission device, the first electrode provided with the anode electrode 24, the phosphor layer 22, and the like are provided. 2 panel P ₂ (anode panel AP) is prepared, and a joining member made of a frit glass layer made of B ₂ O ₃ —PbO frit glass or SiO ₂ —B ₂ O ₃ —PbO frit glass 130 is prepared.

[Step-810]
Then, in the same manner as in [Step-210] of the second embodiment, a portion of the insulating film 16 inside the region of the insulating film 16 that should be positioned below the bonding member 130 extends substantially parallel to the bonding member 130. 1 of the protective film width defining portion (inner wettability control layer 43) is formed substantially continuously, and in the portion of the insulating film 16 outside the region of the insulating film 16 to be positioned below the bonding member 130, A second protective film width defining portion (outer wettability control layer 44) extending substantially parallel to the bonding member 130 is formed substantially continuously.

[Step-820]
Next, in the same manner as in [Step-220] of Example 2, the protective film 40 is applied to the region of the insulating film 16 located between the inner wettability control layer 43 and the outer wettability control layer 44 based on the coating method. Form. Thereafter, similarly to [Step-130] of Example 1, the bottom surface of the joint member 130 is in contact with the protective film 40, as the top surface of the joint member 130 is in contact with the second panel invalid region EF _2, first The panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 are assembled, and the frit glass layer constituting the joining member 130 in the same manner as in [Step-140] of the first embodiment. Thus, the first panel P ₁ (cathode panel CP) and the second panel P ₂ (anode panel AP) are joined in their ineffective regions NE ₁ and NE ₂ . Next, in the same manner as in [Step-150] of Example 1, the space surrounded by the first panel P ₁ (cathode panel CP), the second panel P ₂ (anode panel AP), and the joining member 130 is exhausted. Then, wiring connection between the extraction electrodes 11A and 13A and a necessary external circuit is performed to complete the display device.

Even in the display device thus manufactured, foaming of the frit glass layer constituting the joining member 130 and oxidation and disconnection of the extraction electrodes 11A and 13A are not recognized at all, and it is good between the joining member 130 and the protective film 40. Adhesiveness was exhibited. Further, regarding the airtightness, a leak rate measurement test using helium gas showed a very small value of 10 ⁻¹² Torr · L / sec or less, and there was no problem at all.

  Hereinafter, with reference to FIGS. 41A to 41C and FIGS. 42A to 42C, description will be given of a method for manufacturing a Spindt-type field emission device in Examples 5 to 8. The Spindt-type field emission device can be basically obtained by a method of forming the conical electron emission portion 15 by vertical vapor deposition of a metal material. That is, the vapor deposition particles are perpendicularly incident on the first opening 14A provided in the gate electrode 13, but use the shielding effect by the overhanging deposit formed near the opening end of the first opening 14A. Thus, the amount of vapor deposition particles reaching the bottom of the second opening 14B is gradually reduced, and the electron emission portion 15 that is a conical deposit is formed in a self-aligning manner. Here, a method of forming the separation layer 70 in advance on the gate electrode 13 and the insulating layer 12 in order to facilitate removal of unnecessary overhanging deposits will be described. In FIGS. 41A to 41C and FIGS. 42A to 42C for explaining the method of manufacturing the field emission device, or FIG. 43 described later, one electron emission is performed. Only the part is shown. Therefore, the positional relationship between the first opening 14A, the insulating film 16, and the insulating film opening 17 is slightly different from the relationship shown in FIG.

[Step-A]
First, a cathode electrode conductive material layer made of, for example, polysilicon is formed on the support 10 made of, for example, a glass substrate by a plasma CVD method, and then the cathode electrode conductive material layer is formed based on a lithography technique and a dry etching technique. Is patterned to form a strip-like cathode electrode 11. Thereafter, an insulating layer 12 made of SiO _{2 is} formed on the entire surface by a CVD method.

[Step-B]
Next, a gate electrode conductive material layer (for example, a chromium layer) is formed on the insulating layer 12 by a sputtering method, and then the gate electrode conductive material layer is patterned by a lithography technique and a dry etching technique. Thus, a belt-like gate electrode 13 made of chromium (Cr) can be obtained. The strip-shaped cathode electrode 11 extends in the left-right direction in the drawing, and the strip-shaped gate electrode 13 extends in the direction perpendicular to the drawing.

  The gate electrode 13 is formed by a well-known thin film formation method such as a PVD method such as a vacuum deposition method, a CVD method, a plating method such as an electroplating method or an electroless plating method, a screen printing method, a laser ablation method, a sol-gel method, a lift-off method. If necessary, it may be formed by a combination with an etching technique. According to the screen printing method or the plating method, for example, a strip-shaped gate electrode can be directly formed.

[Step-C]
Thereafter, a resist layer is formed again, the first opening 14A is formed in the gate electrode 13 by etching, the second opening 14B is formed in the insulating layer, and the cathode electrode 11 is formed at the bottom of the second opening 14B. After the exposure, the resist layer is removed. Thus, the structure shown in FIG. 41A can be obtained.

[Step-D]
Next, after an insulating film 16 made of Si ₃ N ₄ is formed on the entire surface, a portion of the insulating film 16 located above the overlapping region of the cathode electrode 11 and the gate electrode 13 is selectively removed to form an insulating film 16. An insulating film opening 17 is formed (see FIG. 41B).

[Step-E]
Next, nickel (Ni) is obliquely vacuum-deposited on the insulating film 16 (and on the exposed gate electrode 13) while rotating the support 10, thereby forming a release layer 70 (FIG. 41). (See (C)). At this time, by selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal of the support 10 (for example, an incident angle of 65 to 85 degrees), nickel is hardly deposited on the bottom of the second opening 14B. The release layer 70 can be formed on the insulating film 16 (and on the exposed gate electrode 13). The release layer 70 protrudes in a bowl shape from the opening end of the first opening 14A, whereby the first opening 14A is substantially reduced in diameter.

[Step-F]
Next, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 42A, as the conductive material layer 71 having an overhang shape grows on the release layer 70, the substantial diameter of the first opening 14A is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the second opening 14B are gradually limited to those that pass near the center of the first opening 14A. As a result, a conical deposit is formed at the bottom of the second opening 14 </ b> B, and this conical deposit becomes the electron emission portion 15.

[Step-G]
Thereafter, as shown in FIG. 42B, the peeling layer 70 is peeled off from the insulating film 16 (further, the exposed gate electrode 13) by a lift-off method, and the insulating film 16 (further exposed). The conductive material layer 71 above the gate electrode 13) is selectively removed. Next, the side wall surface of the second opening 14B provided in the insulating layer 12 is retracted by isotropic etching (see FIG. 42C), so that the opening end of the gate electrode 13 is exposed. Therefore, it is preferable. The isotropic etching can be performed by dry etching using radicals as a main etching species, such as chemical dry etching, or wet etching using an etchant. As the etchant, for example, a 1: 100 (volume ratio) mixed solution of 49% hydrofluoric acid aqueous solution and pure water can be used. Thus, a Spindt type field emission device can be obtained.

  If [Step-D] is omitted, the Spindt-type field emission device in Examples 1 to 4 can be manufactured.

  In the field emission device, an interlayer insulating layer 18 may be further provided on the insulating film 16, and a focusing electrode 19 may be provided on the interlayer insulating layer 18. FIG. 43 shows a schematic partial end view of a field emission device having such a structure. The interlayer insulating layer 18 is provided with a third opening 14C that communicates with the first opening 14A. For example, the converging electrode 19 is formed by forming the interlayer insulating layer 18 on the insulating film 16 following the [Step-G], and then forming the third opening 14C in the interlayer insulating layer 18 and then performing oblique deposition. Based on the above, it can be performed by forming a conductive material layer on the interlayer insulating layer 18 and on the side wall of the third opening 14C. In FIG. 43, the Spindt-type field emission device is illustrated, but it goes without saying that other field emission devices may be used.

  When the interlayer insulating layer 18 is formed using a photosensitive polyimide resin, the inner protrusion 41 and the outer protrusion 42 can be formed using the same material at the same time.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations and structures of the flat panel display device, the first panel, the second panel, the cathode panel and the anode panel, the cold cathode field emission display device and the cold cathode field emission device described in the embodiments are examples and are appropriately changed. can do. Furthermore, the display device has been described by taking color display exclusively as an example, but it may also be a single color display. In some cases, the formation of the focusing electrode can be omitted.

  In the embodiment, the first panel is composed of a cathode panel CP in which a plurality of cold cathode field emission devices are formed, and the second panel is composed of an anode panel AP in which an anode electrode and a phosphor layer are formed. Instead, the first panel may be composed of an anode panel AP in which an anode electrode and a phosphor layer are formed, and the second panel may be composed of a cathode panel CP in which a plurality of cold cathode field emission devices are formed. .

  When the protective film material is formed on the insulating film by a coating method, if the protective film can be reliably formed only on the portion where the protective film is to be formed, the inner protrusion 41, the outer protrusion 42, the inner Formation of the wettability control layer 43 and the outer wettability control layer 44 may be unnecessary. For example, if a protective layer is formed based on a printing method using a coating solution having a high viscosity, the inner protrusion 41, the outer protrusion 42, the inner wettability control layer 43, and the outer wettability control layer 44 are formed. In addition, a protective film can be formed on a desired insulating film portion.

  In addition, in the field emission device, the mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of first openings may be provided in the gate electrode, a second opening connected to the plurality of first openings in the insulating layer may be provided, and one or a plurality of electron emission portions may be provided. .

The flat display device may be a flat display device including an electron-emitting device commonly referred to as a surface conduction electron-emitting device. This surface conduction electron-emitting device is formed on a support made of glass, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide ( A pair of electrodes made of a conductive material such as (PdO), having a very small area and arranged with a predetermined gap (gap) are formed in a matrix. A carbon thin film is formed on each electrode. The row direction wiring is connected to one electrode of the pair of electrodes, and the column direction wiring is connected to the other electrode of the pair of electrodes. By applying a voltage to the pair of electrodes, an electric field is applied to the carbon thin films facing each other across the gap, and electrons are emitted from the carbon thin film. By causing the electrons to collide with the phosphor layer on the anode panel, the phosphor layer is excited to emit light, and a desired image can be obtained. In this case, the extending portion of the row direction wiring and the extending portion of the column direction wiring correspond to the extraction electrode. Alternatively, the flat display device may be a flat display device including a metal / insulating material film / metal element.

FIG. 1 is an enlarged schematic partial end view of the vicinity of a bonding member along a second direction (Y direction) in the cold cathode field emission display according to the first embodiment. FIG. 2 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the first embodiment. FIG. 3 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 1, and a joining member along the second direction (Y direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 4 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 1, and a joining member along the first direction (X direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 5 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 1, following FIG. 3, in the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 6 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 1 following FIG. 4, in the first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 7 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the second embodiment. FIG. 8 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the second embodiment. FIG. 9 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 2, and a joining member along the second direction (Y direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 10 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 2, and a joining member along the first direction (X direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 11 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 2 following FIG. 9, in the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 12 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 2 following FIG. 10, in the first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 13 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 2 following FIG. 11, in the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 14 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 2 following FIG. 12, and shows a first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 15 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the third embodiment. FIG. 16 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the third embodiment. FIG. 17 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the fourth embodiment. FIG. 18 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the fourth embodiment. FIG. 19 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the fifth embodiment. FIG. 20 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the fifth embodiment. FIG. 21 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 5, and a joining member along the second direction (Y direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 22 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 5, and a joining member along the first direction (X direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 23 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 5 following FIG. 21, in the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 24 is a schematic partial end view of the first panel for explaining a method of assembling the cold cathode field emission display device of Example 5 following FIG. 22, and shows a first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 25 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the sixth embodiment. FIG. 26 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the sixth embodiment. FIG. 27 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 6, and the joining member along the second direction (Y direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 28 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 6, and the joining member along the first direction (X direction). It is the typical enlarged partial end elevation of the neighborhood. FIG. 29 is a schematic partial end view of the first panel for explaining the assembling method of the cold cathode field emission display device of Example 6 following FIG. 27, and shows the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 30 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 6 following FIG. 28, and shows a first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 31 is a schematic partial end view of the first panel for explaining the assembling method of the cold cathode field emission display device of Example 6 following FIG. 29, and shows the second direction (Y direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 32 is a schematic partial end view of the first panel for explaining the method of assembling the cold cathode field emission display device of Example 6 following FIG. 30, in the first direction (X direction). FIG. 6 is an enlarged schematic partial end view of the vicinity of the joining member along the line. FIG. 33 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display of Example 7. FIG. 34 is an enlarged schematic partial end view of the vicinity of the joining member along the first direction (X direction) in the cold cathode field emission display according to the seventh embodiment. FIG. 35 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display according to the eighth embodiment. FIG. 36 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display according to the eighth embodiment. FIG. 37 is a conceptual partial end view of a flat display device including a conventional cold cathode field emission display having a Spindt type cold cathode field emission device. FIG. 38 is a conceptual partial end view of a flat display device including a conventional cold cathode field emission display device having a flat type cold cathode field emission device. FIG. 39 is a schematic exploded perspective view of a part of the cathode panel and the anode panel in the cold cathode field emission display. FIG. 40A is a diagram schematically showing an arrangement state of components constituting the electron emission region when the electron emission region is viewed from the anode panel side, and FIG. It is a figure which shows typically arrangement | positioning of the effective area | region, invalid area | region, a cathode electrode, a gate electrode, and an extraction electrode in 1 panel (cathode panel). 41A, 41B, and 41C are schematic partial end views of a support and the like for explaining a method of manufacturing a Spindt-type cold cathode field emission device. 42A, 42B, and 42C are schematic partial views of a support and the like for explaining the manufacturing method of the Spindt-type cold cathode field emission device following FIG. 41C. It is an end view. FIG. 43 is a schematic partial end view of a Spindt-type cold cathode field emission device having a focusing electrode. FIG. 44 is an enlarged schematic partial end view of the vicinity of the bonding member along the second direction (Y direction) in the cold cathode field emission display. FIG. 45 is an enlarged schematic partial end view of the vicinity of the bonding member along the first direction (X direction) in the cold cathode field emission display.

Explanation of symbols

P ₁ ... 1st panel, P ₂ ... 2nd panel, EF ₁ ... 1st panel effective area, EF ₂ ... 2nd panel effective area, NE ₁ ... 1st panel invalid area , NE ₂ ... second panel invalid area, CP ... cathode panel (second panel), AP ... anode panel (first panel), EA ... electron emission area, 10 ... support , 11 ... cathode electrode, 11A ... extraction electrode (extended portion of cathode electrode), 12 ... insulating layer, 13 ... gate electrode, 13A ... extraction electrode (extended portion of gate electrode) ), 14... Opening, 14A... 1st opening, 14B... 2nd opening, 14C... 3rd opening, 15, 15A. Insulating film, 17 ... insulating film opening, 18 ... interlayer insulating layer, 19 ... converging electrode, 20 ... substrate 21 ... barrier ribs, 22, 22R, 22G, 22B ... phosphor layer, 23 ... light absorption layer (black matrix), 24 ... anode electrode, 30, 130 ... bonding member, 31. ..Frame, 32 ... first frit glass layer, 33 ... second frit glass layer, 41 ... first protective film width defining portion (inner protrusion), 42 ... second Protective film width defining portion (outside protrusion), 43... First protective film width defining portion (inner wettability control layer), 44... Second protective film width defining portion (outer wettability control layer) 45 ... wettability control film, 50 ... dispenser, 61 ... cathode electrode control circuit, 62 ... gate electrode control circuit, 63 ... anode electrode control circuit, 70 ... release layer, 71 ... Conductive material layer

Claims (40)

(A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
A flat display device comprising:
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the first panel inside the region of the first panel located below the bonding member,
A second protective film width defining portion extending substantially parallel to the joining member is formed substantially continuously in the portion of the first panel outside the region of the first panel located below the joining member,
The protective film made of a metal oxide is formed on the first panel portion and the extraction electrode portion located between the first protective film width defining portion and the second protective film width defining portion, and is formed on the bottom surface of the joining member. Is in contact with a protective film.   2. The flat display device according to claim 1, wherein each of the first protective film width defining portion and the second protective film width defining portion includes a protrusion.   The flat display device according to claim 2, wherein the protrusion is made of a photosensitive polyimide resin, a non-photosensitive polyimide resin, or a ceramic coating film.   2. The flat display device according to claim 1, wherein each of the first protective film width defining portion and the second protective film width defining portion includes a wettability control layer.   The flat display device according to claim 4, wherein the wettability control layer is made of a silane compound.   2. The flat display device according to claim 1, wherein the joining member includes a frame body, and a first frit glass layer and a second frit glass layer formed on a bottom surface and a top surface of the frame body.   The flat display device according to claim 1, wherein the entire joining member is made of a frit glass layer.   2. The metal oxide constituting the protective film is made of titanium oxide, tantalum oxide, aluminum oxide, magnesium oxide, chromium oxide, zirconium oxide, niobium oxide, tin oxide, or vanadium oxide. Flat display device. The electron emission region for emitting electrons is composed of one or a plurality of cold cathode field emission devices,
Each cold cathode field emission device is
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping portion where the cathode electrode and the gate electrode overlap, and the cathode electrode exposed at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consisting of
2. The flat display device according to claim 1, wherein the extension part of the cathode electrode and the extension part of the gate electrode correspond to extraction electrodes. (A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
A flat display device comprising:
An insulating film is formed on the surface of the extraction electrode,
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the insulating film inside the region of the insulating film located below the bonding member,
A second protective film width defining portion extending substantially parallel to the bonding member is substantially continuously formed in the portion of the insulating film outside the region of the insulating film located below the bonding member,
The protective film made of a metal oxide is formed on the insulating film located between the first protective film width defining portion and the second protective film width defining portion, and the bottom surface of the bonding member is in contact with the protective film. A flat panel display device.   11. The flat display device according to claim 10, wherein each of the first protective film width defining portion and the second protective film width defining portion is formed of a protrusion.   The flat display device according to claim 11, wherein the protrusion is made of a photosensitive polyimide resin, a non-photosensitive polyimide resin, or a ceramic coating film.   11. The flat display device according to claim 10, wherein each of the first protective film width defining portion and the second protective film width defining portion includes a wettability control layer.   14. The flat display device according to claim 13, wherein the wettability control layer is made of a silane compound.   11. The flat display device according to claim 10, wherein the joining member includes a frame body, and a first frit glass layer and a second frit glass layer formed on a bottom surface and a top surface of the frame body.   The flat display device according to claim 10, wherein the entire joining member is made of a frit glass layer.   11. The metal oxide constituting the protective film is made of titanium oxide, tantalum oxide, aluminum oxide, magnesium oxide, chromium oxide, zirconium oxide, niobium oxide, tin oxide, or vanadium oxide. Flat display device.   The flat display device according to claim 10, wherein the insulating film is made of silicon nitride. The electron emission region for emitting electrons is composed of one or a plurality of cold cathode field emission devices,
Each cold cathode field emission device is
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping portion where the cathode electrode and the gate electrode overlap, and the cathode electrode exposed at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consisting of
11. The flat display device according to claim 10, wherein the extended portion of the cathode electrode and the extended portion of the gate electrode correspond to a lead electrode.   20. The flat display device according to claim 19, wherein the insulating layer and the gate electrode are covered with the insulating film except for the electron emission region. (A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
An assembly method of a flat panel display device comprising:
A first protective film width defining portion extending substantially in parallel with the joining member is formed substantially continuously in a portion of the first panel inside the region of the first panel that should be positioned below the joining member, and joined. A second protective film width defining portion extending substantially in parallel with the joining member is formed substantially continuously in a portion of the first panel outside the region of the first panel to be positioned below the member;
After forming a protective film on the region of the first panel located between the first protective film width defining portion and the second protective film width defining portion based on the coating method,
Assembling the first panel, the second panel, and the joining member so that the joining member is in contact with the protective film and in contact with the second panel ineffective region;
Firing the frit glass layer constituting the joining member, and thereby joining the first panel and the second panel in their ineffective regions;
A method for assembling a flat panel display device comprising the steps.   23. The method of assembling a flat display device according to claim 21, wherein each of the first protective film width defining portion and the second protective film width defining portion comprises a protrusion.   23. The method of assembling a flat display device according to claim 22, wherein the protrusion is made of a photosensitive polyimide resin, a non-photosensitive polyimide resin, or a ceramic coating.   22. The method of assembling a flat panel display device according to claim 21, wherein each of the first protective film width defining portion and the second protective film width defining portion comprises a wettability control layer.   25. The method of assembling a flat display device according to claim 24, wherein the wettability control layer is made of a silane compound.   The flat panel display device according to claim 21, wherein the joining member includes a frame body, and a first frit glass layer and a second frit glass layer formed on a bottom surface and a top surface of the frame body. Assembly method.   The method of assembling a flat display device according to claim 21, wherein the entire joining member is made of a frit glass layer.   The metal oxide constituting the protective film is made of titanium oxide, tantalum oxide, aluminum oxide, magnesium oxide, chromium oxide, zirconium oxide, niobium oxide, tin oxide, or vanadium oxide. Assembly method of the flat-panel display device. The electron emission region for emitting electrons is composed of one or a plurality of cold cathode field emission devices,
Each cold cathode field emission device is
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping portion where the cathode electrode and the gate electrode overlap, and the cathode electrode exposed at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consisting of
The method for assembling a flat display device according to claim 21, wherein the extended portion of the cathode electrode and the extended portion of the gate electrode correspond to a lead electrode. (A) In order to drive the electron emission region, the first panel effective region in which electron emission regions for emitting electrons are arranged in a two-dimensional matrix and the first panel invalid region surrounding the first panel effective region are provided. A first panel in which a plurality of extraction electrodes having an insulating film formed on the surface are provided in the first panel invalid area;
(B) a second panel effective region in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed, and a second panel ineffective region surrounding the second panel effective region. A panel,
(C) a joining member that includes a frit glass layer at least in part and joins the first panel and the second panel in their ineffective regions;
An assembly method of a flat panel display device comprising:
A first protective film width defining portion extending substantially parallel to the bonding member is formed substantially continuously in a portion of the insulating film inside the region of the insulating film to be positioned below the bonding member, and the bonding member A second protective film width defining portion extending substantially parallel to the bonding member is substantially continuously formed in a portion of the insulating film outside the region of the insulating film to be positioned below;
After forming a protective film on the region of the insulating film located between the first protective film width defining portion and the second protective film width defining portion based on the coating method,
Assembling the first panel, the second panel, and the joining member so that the joining member is in contact with the protective film and in contact with the second panel ineffective region;
Firing the frit glass layer constituting the joining member, and thereby joining the first panel and the second panel in their ineffective regions;
A method for assembling a flat panel display device comprising the steps.   31. The flat display device according to claim 30, wherein each of the first protective film width defining portion and the second protective film width defining portion includes a protrusion.   32. The flat display device according to claim 31, wherein the protrusion is made of a photosensitive polyimide resin, a non-photosensitive polyimide resin, or a ceramic coating.   31. The flat display device according to claim 30, wherein each of the first protective film width defining portion and the second protective film width defining portion includes a wettability control layer.   34. The flat display device according to claim 33, wherein the wettability control layer is made of a silane compound.   31. The flat display device according to claim 30, wherein the joining member includes a frame, and a first frit glass layer and a second frit glass layer formed on a bottom surface and a top surface of the frame.   31. The flat display device according to claim 30, wherein the entire joining member is made of a frit glass layer.   The metal oxide constituting the protective film is made of titanium oxide, tantalum oxide, aluminum oxide, magnesium oxide, chromium oxide, zirconium oxide, niobium oxide, tin oxide, or vanadium oxide. Flat display device.   31. The flat display device according to claim 30, wherein the insulating film is made of silicon nitride. The electron emission region for emitting electrons is composed of one or a plurality of cold cathode field emission devices,
Each cold cathode field emission device is
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping portion where the cathode electrode and the gate electrode overlap, and the cathode electrode exposed at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consisting of
31. The flat display device according to claim 30, wherein the extended portion of the cathode electrode and the extended portion of the gate electrode correspond to a lead electrode. 40. The flat display device according to claim 39, wherein the insulating layer and the gate electrode are covered with the insulating film except for the electron emission region.

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