JP2007081434A5 - - Google Patents
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- Publication number
- JP2007081434A5 JP2007081434A5 JP2006337208A JP2006337208A JP2007081434A5 JP 2007081434 A5 JP2007081434 A5 JP 2007081434A5 JP 2006337208 A JP2006337208 A JP 2006337208A JP 2006337208 A JP2006337208 A JP 2006337208A JP 2007081434 A5 JP2007081434 A5 JP 2007081434A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- cell transistor
- voltage
- gate electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006337208A JP3940758B2 (ja) | 2006-12-14 | 2006-12-14 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006337208A JP3940758B2 (ja) | 2006-12-14 | 2006-12-14 | 不揮発性半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32594597A Division JP3959165B2 (ja) | 1997-11-27 | 1997-11-27 | 不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007081434A JP2007081434A (ja) | 2007-03-29 |
| JP2007081434A5 true JP2007081434A5 (https=) | 2007-05-17 |
| JP3940758B2 JP3940758B2 (ja) | 2007-07-04 |
Family
ID=37941330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006337208A Expired - Fee Related JP3940758B2 (ja) | 2006-12-14 | 2006-12-14 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3940758B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101033224B1 (ko) | 2009-01-06 | 2011-05-06 | 주식회사 하이닉스반도체 | 플래시 메모리소자 및 그 제조방법 |
| US8648414B2 (en) | 2011-07-01 | 2014-02-11 | Micron Technology, Inc. | Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods |
| US11152568B2 (en) * | 2019-06-27 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Top-electrode barrier layer for RRAM |
| CN115881798A (zh) * | 2023-01-29 | 2023-03-31 | 合肥新晶集成电路有限公司 | 半导体结构及其制备方法 |
-
2006
- 2006-12-14 JP JP2006337208A patent/JP3940758B2/ja not_active Expired - Fee Related
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